Upload
petrolgaz
View
24
Download
0
Embed Size (px)
Citation preview
www.elsevier.com/locate/diamond
Diamond & Related Materia
FTIR studies of nitrogen doped carbon nanotubes
Abha Misra, Pawan K. Tyagi, M.K. Singh, D.S. Misra *
Department of Physics, Indian Institute of Technology, Bombay, Mumbai-400076, India
Available online 13 October 2005
Abstract
Purified and defect free carbon nanotubes have great potential for applications in electronic, polymer composites and biological
sciences. The removal of impurities (carbon nanoparticles and amorphous carbon) is an important step before the CNT applications can be
realized. We report the results of FTIR and TGA/DTA studies of the impurities present in the carbon nanotubes. The multiwalled CNTs
were grown using Microwave Plasma Chemical Vapor Deposition (MPCVD) technique. Fourier transform infrared (FTIR) spectroscopy
was carried out in the range of 400–4000 cm�1 to study the attachment of the impurities on carbon nanotubes. FTIR spectra of the as-
grown MWCNTs show dominant peaks at 1026, 1250, 1372, 1445, 1736, 2362, 2851, 2925 cm�1 that are identified as Si–O, C–N, N–
CH3, CNT, C–O, and C–Hx respectively. The peaks are sharp and intense showing the chemisorption nature of the dipole bond. The
intensity of the peaks due to N–CH3, C–N and C–H reduces after annealing and the peaks vanish on annealing at high temperature (900
-C). The presence of C–N peak may imply the doping of the CNTs with N in substitution mode. TGA/DTA measurements, carried out
under argon flow, show that the dominant weight loss of the sample occurs in the temperature range 400–600 -C corresponding to the
removal of the impurities and amorphous carbon.
D 2005 Elsevier B.V. All rights reserved.
Keywords: MWCNTs; FTIR spectroscopy; TGA/DTA
1. Introduction
Carbon nanotubes [1] (CNTs) are found attractive on
account of their potential for applications in hydrogen
storage, nanoscale devices and sensor [2–6]. High quality
and well-aligned carbon nanotubes are essential for the
applications in the field of nanoelectronics and many of
these applications are dependent upon the chirality and
diameter of CNTs [7]. The nanotubes can be either metallic
or semiconducting depending upon their diameter and
chirality. The presence of defects and impurities that are
electronically and chemically active can change these
properties. Therefore, the control of the defects and
impurities has become important for many applications of
CNTs. Doping is a practical way to tailor the electrical
properties of the CNTs. The nitrogen doped CNT shows n-
type semiconducting behavior regardless of tube chirality
[8].
0925-9635/$ - see front matter D 2005 Elsevier B.V. All rights reserved.
doi:10.1016/j.diamond.2005.08.013
* Corresponding author.
E-mail address: [email protected] (D.S. Misra).
A great deal of attention has been devoted to the N-doped
CNTs. Several groups have produced carbon nanotubes
containing nitrogen or nitrogen and boron. The specific
interest in CNx tubes is due to the fact that substituted N
makes exclusively semiconducting tubes. Many groups have
proposed that the electronic structure of N doped pyridine-
like, pyrolic, and graphite like structure (Carbon atom has
been replaced by N atom in graphite layers) is similar to
triple-bonded CN [9–11]. Another group has proposed that N
atoms might exist mainly inside the inner core of CNTs [12].
In this paper we investigate the nitrogen doped multiwalled
carbon nanotubes using Fourier transform infrared (FTIR)
spectroscopy and thermo gravimetric analysis (TGA).
2. Experimental
CNTs were grown onto nickel electroplated copper foil
substrates. The commercial grade copper foils (purity, 98%),
polycrystalline in nature, were used without any special pre-
treatment to improve their smoothness. The electroplating of
ls 15 (2006) 385 – 388
A. Misra et al. / Diamond & Related Materials 15 (2006) 385–388386
Ni on copper foil was performed in an electroplating bath.
The copper substrate (1 cm�1 cm�0.1 mm) was used as
cathode and a thin platinum wire was used as the anode.
Commercial grade nickel sulfate (NiSO4I7H2O) (275 g/l)
and nickel chloride (NiCl2I6H2O) (60 g/l) were used as
electrolytes in a dc electroplating process. The bath
temperature and current were maintained at 60 -C and 80
mA, respectively. The nickel layers having a thickness of
5–10 Am were treated in the plasma of ammonia (NH3) gas
for 10 s. Ammonia plasma treatment was performed for 10 s
in the temperature range of 300–750 -C at 10 Torr for the
formation of nano-sized nickel catalyst, which was the
precursor for subsequent CNTs growth using chemical
vapor deposition (CVD). The flow rate of ammonia was
kept at 180 sccm. Methane (CH4) and hydrogen (H2) were
used with respective flow rates of 6 and 40 sccm. The
temperature of the substrate was maintained at 820T20 -Cat deposition pressure ;40 Torr. The deposition time was 5
min. Nitrogen doping was achieved by adding ammonia gas
with flow rate of 180 sccm in the gas mixture at the time of
deposition.
Thermal Gravimetric Analysis (TGA) were carried out
on Mettler–Toledo (TGA/SDTA851) thermal analyzer
under argon flow at the heating rate of 5-/min to obtain
information on the decomposition and the burning proper-
ties of carbon nanotubes and impurities present in it. The
temperature of the sample was varied from room temper-
Fig. 1. (a) SEM micrograph of a sample of multiwalled carbon nanotubes deposi
TEM images of the multiwalled carbon nanotubes free of encapsulated and wit
Transmission Electron Microscopy (HRTEM) image of graphitic walls of a typic
ature to 900 -C. The Fourier transform infrared (FTIR)
spectrometer were recorded on Nicolet Magna 550 FT-IR
Spectrum. The samples for FTIR studies were prepared by
suspending approximately 6 mg of MWCNT materials in
¨15 ml isopropyl alcohol by sonication with an ultra sonic
probe for several minutes. One drop of this solution was
sprayed onto silicon wafer and a uniform thin MWNT film
on the IR transparent silicon substrate was thus obtained.
FTIR studies were carried out in the range of 400–4000
cm�1 in the absorbance mode. The FTIR results with the
support of TGA results give a reasonably good picture of the
attachment on the carbon nanotubes.
3. Results and discussion
Fig. 1(a) shows the SEM micrograph of high density
MWCNTs grown on nickel electroplated copper substrate
after ammonia plasma treatment for 2 min. The average
length and diameter of the tubes are 100 Am and 20 nm
respectively. Fig. 1 (b–c) show TEM images of the
multiwalled carbon nanotubes free of encapsulated and with
encapsulated catalytic nickel particles, respectively. The
inset in Fig. 1(c) shows that the inner and outer diameter of
the CNT is 12.84 and 18.43 nm respectively and the tips of
the CNTs are closed. Fig. 1(d) is the High-Resolution
Transmission Electron Microscopy (HRTEM) image of
ted on a copper substrate. The high density of tubes is noteworthy. (b)– (c)
h encapsulated catalytic nickel particles, respectively. (d) High-Resolution
al MWCNT.
-200 200 400 600 800 1000 1200-20
0
20
40
60
80
100
120
DTA
TGA
Temperature (0C)
Wei
gh
t Per
cen
t
0
Fig. 3. TG-DTA results for MWNTs.
A. Misra et al. / Diamond & Related Materials 15 (2006) 385–388 387
graphitic walls of a MWCNT. The separation between two
consecutive walls is 3.22 A.
FTIR is used to characterize the functional elements
absorbed by carbon nanotubes. Fig. 2 (a–d) shows the FTIR
spectra in the range of 400–4000 cm�1 a) of as-grown
tubes, b) of the tubes collected after TGA at 400 -C, c) ofthe tubes annealed at 600 -C, and d) of the tubes collected
after TGA at 900 -C. FTIR of a) shows dominant peaks at
1026, 1250, 1372, 1445, 1736, 2362, 2851, 2925 cm�1
which corresponds to Si–O, C–N, N–CH3, CNT, C–O,
C–Hx respectively. The infra-red absorbance at 1026 cm�1
is consistent with Si–O stretching vibrations due to slightly
different concentrations in the native oxide layer of the
silicon before and after coating with MWCNTs film [13].
Out of the above identified bonds, the presence of C–N and
N–CH3 bonds at 1250 and 1372 cm�1 is most interesting.
The strong peaks at 1250 and 1372 cm�1 are consistent with
C–N and N–CH3 stretching vibrations attributed by Choi et
al. [14] to the presence of intercalated N atoms between the
graphite layers at the inner part of the nanotube walls.
However, in our opinion the intercalated nitrogen atoms in
between the graphite walls may not be strongly IR active.
The halfwidths of the C–N and N–CH3 peaks are 36.72 and
18.53 cm�1 respectively, and suggest that the chemisorption
process may be dominant implying chemical bonding
between carbon and nitrogen atoms. It has been pointed
out [15–18] that substituting a N atom in place of a C atom
in a sp2 bonded carbon network will induce strong IR
activity; consequently the absorption in the 1200–1600
cm�1 region is expected if the N atoms are bonded into the
carbon network. We therefore strongly believe that N
doping of graphene sheets may be taking place and a C–
N bond identical to the sp3 bonded carbon nitride sample
may be forming. Features at 1445 and 1736 cm�1 attributed
to MWCNT vibrational modes are also apparent [19]. The
peak at 2362 cm�1 corresponds to the C–O bonds and the
features between 2851 and 2925 cm�1 are consistent with
500 1000 1500 2000 2500 3000 3500
CNT
CNT
N-CH3
C-N
Si-O
(d)(c)
(b)
(a) C-Hx
Ab
sorb
ance
(ar
b. u
nit
s)
Wave number (cm-1)
Fig. 2. FTIR spectra of (a) as-grown MWNTs, (b) after TGA at 400 -C, (c)
after annealing at 600 -C, and (d) after TGA at 900 -C.
C–Hx stretching vibrations of chemisorbed hydrogen of
various types presents in all carbon films [20,21].
The intensity of the peaks due to N–CH3, C–N and C–
H are gradually suppressed, after annealing at 400 -C. Thesuppression of the peaks would be related to the gradual
removal of nitrogen and hydrogen bonded species as
impurity. The bonding of N to carbon atom in graphene
sheet will give rise to a defect in structure, which would get
annealed, at high temperature. This results in the reduction
of the intensity of the IR peaks with annealing. Further
annealing of the sample at 600 -C does not induce any
appreciable change. It is interesting to note that these peaks
vanish on annealing at higher temperature (900 -C)implying that at high temperature the defects inside the
tubes are getting strongly mobile leading to the destruction
of the attachments along with the tubes.
TGA/DTA curve in Fig. 3 reveals a small weight loss due
to water removal around 80 -C. The dominant weight loss
steps are due to the removal of carbon materials and also
due to the decomposition of nanotubes [22–24] taking place
in the temperature range between 400 and 600 -C. The
weight loss starts near 400 -C and the process completes by
600 -C. This result agrees with the FTIR spectra in Fig.
1(b–c) discussed above where we have shown a significant
decrease in the intensity of IR peaks upon annealing to 400
-C. The MWCNTs are completely destroyed at 900 -C,suggesting that at this temperature amorphous carbon as
well as MWCNTs converts to gaseous form. The complete
removal of all the dominant peaks from the FTIR spectra in
Fig. 1(d) confirms the burning of MWCNTs at 900 -Cresulting in the change of the color of the sample.
4. Conclusion
FTIR technique gives information about gaseous ele-
ments attached to the tube. Nitrogen attachment is evident
from strong and intense IR peaks at 1250 and 1372 cm�1.
From the intensity and halfwidth of these peaks we
conclude that the N atom is incorporated at substitutional
A. Misra et al. / Diamond & Related Materials 15 (2006) 385–388388
sites in the carbon network. TGA/DTA has been used to
study the weight loss of carbon nanotube as a function of
temperature. We found that the dominant weight loss
occurs the between 400 and 600 -C range and agrees well
with disappearance of IR peaks corresponding to N-
attachment. TGA can be used to get the information about
the weight loss of the sample.
Acknowledgements
The authors would like to thank Dr. P.V. Satyam of
Institute of Physics Sachivalaya Marg, Bhubaneshawar for
high-resolution transmission electron microscopy (HRTEM)
measurements.
References
[1] S. Ijima, Nature (London) 354 (1991) 56.
[2] S.J. Tans, C. Dekker, Nature (London) 404 (2000) 834.
[3] J.T. Hu, O.Y. Min, P.D. Yang, C.M. Laiber, Nature (London) 399
(1999) 48.
[4] R.D. Antonov, A.T. Johnson, Phys. Rev. Lett. 83 (1999) 3274.
[5] M.S. Fuhrer, J. Nygard, L. Shih, M. Forero, Y.-G. Yoon, M.S.C.
Mazzoni, H.J. Choi, J. Ihm, S.G. Louie, A. Zettl, P.L. Mceuen,
Science 288 (2000) 494.
[6] J. Kong, N.R. Franklin, C. Zhou, M.G. Chapline, S. Peng, K. Cho, H.
Dai, Science 287 (2000) 622.
[7] A. Hassanien, M. Tokumoto, Y. Kumazawa, H. Kataura, Y. Maniwa,
S. Suzuki, Y. Achida, Appl. Phys. Lett. 73 (1998) 3839.
[8] R. Czerw, et al., Nano Lett. 1 (2001) 457.
[9] J. Casanovas, J.M. Ricart, J. Rubio, F. Illas, J.M. Jimenez-Mateos, J.
Am. Chem. Soc. 118 (1996) 8071.
[10] M.C. dos Santos, F. Alvarez, Phys. Rev., B 58 (1998) 13918.
[11] I. Shimoyama, G. Wu, T. Sekiguchi, Y. Baba, Phys. Rev., B 62 (2000)
R605.
[12] M. Terrones, R. Kamalakaran, T. Seeger, M. Ruhle, Chem. Commun.
(Cambridge) (2000) 2335.
[13] S.L. Sung, C.H. Tseng, F.K. Chiang, X.J. Guo, X.W. Liu, Thin Solid
Films 340 (1999) 169.
[14] Hyun Chul Choi, Seung Yong Bae, Jeunghee Park, Appl. Phys. Lett.
85 (2004) 5742.
[15] M.R. Wixom, J. Am. Ceram. Soc. 73 (1990) 1973.
[16] J.H. Kaufman, S. Metin, D.D. Saperstein, Phys. Rev., B 39 (1989)
13053.
[17] Y.K. Yap, S. Kida, T. Aoyama, Y. Mori, T. Sasaki, Appl. Phys. Lett. 73
(1998) 915.
[18] S.H. Lai, et al., Thin Solid Films 444 (2003) 38.
[19] A.C. Dillon, T. Gennett, J.L. Alleman, K.M. Jones, Proceedings of the
2000 DOE/NREL Hydrogen Program Review, 2000 (May 8–10).
[20] G.-Q. Yu, et al., Diamond Relat. Mater. 11 (2002) 1633.
[21] J. Ristein, R.T. Stief, L. Ley, W. Beyer, JAP 84 (1998) 3836.
[22] D.G. McCulloch, E.G. Gerstner, D.R. McKenzie, S. Prawer, R. Lalish,
Phys. Rev., B 52 (1995) 850.
[23] M. Zhang, M. Yudasaka, S. Iijima, Chem. Phys. Lett. 364 (2002) 42.
[24] M. Zhang, M. Yudasaka, S. Bandow, S. Iijima, Chem. Phys. Lett. 369
(2003) 680.