GaN Brings About a New Way of Thinking to Power ConversionStephen Colino

Efficient Power Conversion Corporation

1

GaNWide Bandgap Hetero Junction

• Wide Bandgap– Shorter distance required to support voltage

• Hetero Junction– Forms 2 Dimensional Electron Gas (2DEG)– Electrons not bound to any particular atom– Higher conductivity

• GaN is still far from theoretical limits

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GaN

Si

Distance electrons need to travel

Conductivity

Dielectric

GaN

Si

AlGaN Electron Generating Layer

Aluminum NitrideIsolation Layer

DGS- - - - - - - - - - - - - - -- - - -

eGaN FET Structure on Silicon

Two DimensionalElectron Gas (2DEG)

• For a given RDS(on) and VDS capability– Smaller device– Lower Capacitance– Zero QRR– Lower Inductance

+-

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7980818283848586878889909192

2 6 10 14 18 22 26 30 34 38 42 46 50

Effic

ienc

y (%

)

Output Current (A)

GaN Circa 2014

GaN Circa 2010

GaN Circa 2012

GaN Circa 2015

VIN=12 V, VOUT=1.2 V, fsw=1 MHz

GaN Developing Quickly

GaN Versus SiliconParameter Conditions EPC2045 BSC070N10NS5

RDS(on) (typ) VGS = 5 V*, TJ = 25 °C 5.6 mΩ 6 mΩQG (typ) VGS = 5 V, VDS = 50 V, ID = 16 A* 5.2 nC 30 nCQGD (typ) VDS = 50 V 1.1 nC 6 nCQSW (typ) VGS = 5 V, VDS = 50 V, ID = 10 A* 1.6 nC 11 nCQOSS (typ) VDS = 50 V 21 nC 30 nCEOSS (typ) VDS = 50 V 0.4 µJ 1.45 µJ**QRR (typ) VDS = 50 V, IF = 20 A, diF/dt = 100 A/µs 0 nC 89 nC

LCS (estimated) 0.1 pH 0.5 pH

RG (typ) 0.6 Ω 1 ΩRDS(on) x QSW Switching FOM 8.96 mΩ nC 70.4 mΩ nC

RDS(on) x (QOSS + QRR) Rectifier FOM 118 mΩ nC 624 mΩ nC

RӨ(JC) Thermal impedance to top 1.4 °C/W 20 °C/W

Area 3.75 mm2 31.7 mm2

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*VGS = 10 V, ID = 40 A for BSC070N10NS5**Estimated by taking second integral of COSS versus CDS curve

Wafer Level Packaging

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• Single interface with PCB• No wires or clips• Active area Intimate with PCB for inductance cancelling • RoHS 6 of 6• MSL-1

What eGaN Technology Has Less Of

• Less parasitic capacitance and inductance– Efficient at high frequency– Less overshoot and ringing

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10 V/ div 10 A 20 ns/ div

80 V Si MOSFET

10.3 mΩ100 V eGaN FET

5.6 mΩ

LCS

CGS

CDS

CGDRG

LD

QRR

WLP - Excellent Thermally

• Dual Sided Cooling• Gap Filler• Thermal interface (electrically isolating)• Heatsink

– (200 PSI max)

What Does Fast,Low Loss Switching Buy?

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11

Heat-sink

Sensor

Kapton

Sensor leads

RTV adhesive

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Extreme Output Power @ High Frequency

Extreme Output Power @ High Frequency

Steps indicate duration to reach thermal equilibrium

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25

30

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75

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0 10 20 30 40 50 60 70 80 90 100 110 120 130

Tota

l Pow

er L

oss [

W]

Effic

ienc

y [%

]

Time [minutes]

EPC2047 Duration Heatsink Test

250kHz Eff

200 kHz Eff

250kHz Loss

200 kHz Loss

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140 V in 28 V out stepped to 34 A

Increase Bandwidth in Power Supplies for Base Stations

• PA with constant voltage acts as constant power dissipater• GaN enables high bandwidth power supply• 4 phase, 60 W

– 92% Power system efficiency– 20 MHz, 7 dB PAPR LTE envelope signal

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Reduce Notebook and Tablet Size

• 100 nH inductor• Reduces board system height• Reduces voltage regulator footprint

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3 mm x 1.5 mm half bridge50 mm2 x 1.2 mm high

Reduce Size and Cost of 48 V to 12 V

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600 W Isolated 600 W Isolated 500 W Buck (or Boost)f 100 kHz 200 kHz 500 kHz 1 MHz

L 6.8 uH 3.3 uH 1 uH 0.68 uH

IPP 13.2 A 13.6 A 18 A 13.2 A

Inductor IHLP8787GZ-51 IHLP6767GZ-51 IHLP5050CE-01 IHLP3232DZ-01

Size (mm) 22 x 22.5 x 13 17 x 17.2 x 7 12.9 x 13.2 x 3.5 8.2 x 8.6 x 4

DCR (mΩ) 3.09 3.27 3.5 3.67

Wireless Power Transfer

• 6.78 MHz and 13.56 MHz magnetic resonance• Power into the body• Power a desk• 100 W + demonstrated

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Find the Richness in Music

• Where’s the heatsink?• Increased open loop linearity reduces

magnitude of feedbackEPC – The Leader in GaN Technology www.epc-co.com 17

FFT from 20 Hz to 20 kHz of a 1 kHz signal at -60 dBr

400 W into 4 ohms2.11 mm

1.63 mm

Increase Resolution of3D Imaging

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• LiDAR 3D imaging systems chase the speed of light (30 cm/ns (1 ft/ns))

• Breaking distance is 150 m at 160 km/h• Identify the object

43 A, 75 V, 2.8 ns, Laser Driver IC

Conclusions

• GaN provides fast, low loss switching• Fast, low loss switching enables different

ways to solve power conversion and deliver problems

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