GGOX OFC Presentation 100G EO Polymer Modulators 032510

100Gbps EO Polymer Modulator 100Gbps EO Polymer Modulator Product and Its Characterization using Product and Its Characterization using a Reala Real‐‐Time DigitizerTime Digitizergg

Dr. Raluca DinuDr. Raluca Dinu

03/25/201003/25/2010

GigOptix is now offering ASIC Solutions

OverviewOverview

EO Polymer Technology Overview

GGOX MZM Product Development StatusPerformance dataPerformance dataReliability data

100Gbps EO Polymer Modulator

High‐Frequency Characterization Using Photonic Time‐stretched A/D Converter

GigOptix is now offering ASIC SolutionsGigOptix Inc CONFIDENTIAL - 201022

EO Polymer Modulator TechnologyEO Polymer Modulator Technology

GigOptix is now offering ASIC Solutions3 GigOptix Inc CONFIDENTIAL - 20103

EO Polymer MZMEO Polymer MZMEO polymer MZMs characteristics

Large bandwidthProven capability up to 100Gbps

Low Vπ devicesLow drive voltages and transponder power dissipationLow drive voltages and transponder power dissipation

Small chip footprint Especially important when moving into multi‐MZM modulators for more complicated modulations schemes such as DQPSK and DP QPSKcomplicated modulations schemes such as DQPSK and DP‐QPSK

Same footprint for 10G up to 100G MZM chips and for 40G to 100G DQPSK and DP‐QPSK chips

St t f th T h lState of the TechnologyLower insertion loss and Vπ ‐ competitive performance to industry traditional modulators

Operating temperature 850C / 25 years stability


Operating temperature 85 C / 25 years stability

Comparison with Lithium Comparison with Lithium NiobateNiobate

Property LiNbO3 PolymersMaterial Crystal PlasticMaterial Crystal PlasticDielectric Constant 29 <5EO coefficient (pm/V) 31 (CLN*)

38 (SLN**) 9038 (SLN**) 90

IL (dB/cm) 0.2 1.0Tg (0C) n/a 140 – 170

CNCNOO

* CLN Congruent LN** SLN Stoichiometric LN

SS

N

O

CN

CN

CN

O O

OO


GigOptix EO Polymer MaterialGigOptix EO Polymer Material

Host polymerGuest polymer(Chromophore)(Chromophore)

GigOptix EO polymer material is a composite comprising a proprietary guest chromophore and a host polymer.


ElectroElectro‐‐Optic (EO) PolymersOptic (EO) Polymers• A chromophore and a polymer• Polarization of chromophore responsible for EO effect

acceptor

+

electricfield

p

ddonor

-• Electrical field changes refractive index of material• Polarization happens in femtoseconds• Max operation frequency is dependent on RF loss of the electrode


Contact PolingContact Poling

+ + + + ++

GND


Anatomy of a EO polymer MZMAnatomy of a EO polymer MZM

Top electrode

Ground pads

Top clad

Electro-optic polymer

End of waveguideWaveguide trench

Bottom clad

Ground plane

GigOptix is now offering ASIC SolutionsGigOptix Inc CONFIDENTIAL - 201099 20 April 2006

Silicon substrate

GigOptix Manufacturing GigOptix Manufacturing

GigOptix has a 1400sq ft, class 10 cleanroom in Bothell, WA10 cleanroom in Bothell, WA

Team of 18 chemists, process, RF, and optical engineers

Specialized in the manufacture of EO polymer modulatorsmodulators

Capacity of 200 wafers/year

Outsourcing partner already identified for volume production


EO Polymer Development StatusEO Polymer Development Status


GGOX EO Polymer Material ImprovementGGOX EO Polymer Material Improvement

4.0

Optical Loss (dB/cm)

2.5

3.0

3.5

0 5

1.0

1.5

2.0

Optical Loss (dB/cm)

0.0

0.5

D-02 D-03 D-04 D-05 D-06 D-07 D-08 D-09 D-10

Linear (Optical Loss (dB/cm))

GigOptix scientists have been able to reduce insertion loss of material by 50% every 3 years



100

R33 (pm/V)

60

70

80

90

100

20

30

40

50

r33 (pm/V)

0

10

D-02 D-03 D-04 D-05 D-06 D-07 D-08 D-09 D-10

Linear (r33 (pm/V))

GigOptix scientists have been able to increase r33 of material by 30pm/V every 3 years



90

Max Operating Temperature (°C)

50

60

70

80

10

20

30

40

50

Max Operating Temp

Linear (Max Operating

0

10

D-02 D-03 D-04 D-05 D-06 D-07 D-08 D-09 D-10

Linear (Max Operating Temp)

GigOptix scientists have increased maximum operating temperature of EO polymer to 85C,

25 years operation.


5 yea s ope at o

GGOX MZM Improvement SynopsisGGOX MZM Improvement Synopsis

80

900

2

D-02 D-03 D-04 D-05 D-06 D-07 D-08 D-09 D-10

60

70

802

4

6

30

40

508

10

12

LX8401LX8400

10

20

3012

14

16

Vpi (V)

IL(dB)

Max Op Temp (degC)

Improvement of GGOX MZM operation over time

018


40G DPSK Competitor Analysis40G DPSK Competitor AnalysisFujitsu Sumitomo Avanex EO Space GigOptix GigOptix

PartFTM7937EZ-

AT.MZH1.5-40X ADC

SD-40 Z-cut LX8400 LX8401A 40X-ADC

Vπ (Vpp)(single)

3.5 (max) 5.5 (max) 5 <4 4.5 3.7

I iInsertionLoss (dB)

~5 <6 3.2 4 <6.8 <6.8 (6.5)

ER DC (dB) 20 (min) 20 (min) 20 (min) 20 (min) 20 (min) 20 (min)

Bandwidth 25 (min) 30 (min) 33 (min) 30 (min) 32 (min) 32 (min)

Package Dimension (mm3)

89x13x10 120x15x10 87x14x10 88x9x9 56x12x10 56x12x10

-5 – 75C (op) -5 – 75C (op)-5 – 75C

( )-5 – 75C (op) -5 – 50C (op)

-5 – 85C (op)40 8 C


Temp5 75C (op)

-40 – 85 (storage)

5 75C (op)-40 – 85C (storage)

(op)-40 – 85 (storage)

5 75C (op)-40 – 85C (storage)

5 50C (op)-40 – 50C (storage)

-40 – 85C (storage)

Reliability Status and PlanningReliability Status and PlanningIn 2009, we conducted extensive tests on our M1 EO polymer material:

Analysis showed that while material could2.000

Analysis showed that while material could operate at 85C, the material could not reliably operate for 25 years at 85C.

We determined that the r33 of the material would increase its V by 20% at 85C over 25 1 600

1.700

1.800

1.900

Incr

ease

M1 85C

M3 85C

would increase its Vπ by 20% at 85C over 25 years, after the burn in process.

Corrective actions were taken to improve temperature stability of polymer material’s r33 to ensure 25 year operating lifetime for

1.300

1.400

1.500

1.600

Mod

el P

redi

cted

Vpi

M1: 1.40x

M3 1 18

Burn in

y p gmaterial

M3 change in Vπ is <10% over 25 years at 85C, after burn in process.

In 2010:

1.000

1.100

1.200

0 50000 100000 150000 200000 250000Time (hr)

M3: 1.18x

25 Years

In 2010:Q1‐Q2’10, take existing polymer dies and run a FIT analysis at different temperatures to determine FIT number for MZM die.

Q4’10 t k t ti d i LX8401


Q4’10, take next generation device, LX8401, and run full Telcordia GR‐468.

100Gbps EO Polymer Modulator100Gbps EO Polymer Modulator


GigOptix 40G Modulator Package vs. CompetitorGigOptix 40G Modulator Package vs. Competitor


LX8900LX8900‐‐W 100G DPSK ModulatorW 100G DPSK ModulatorAdvanced

MarketRF PhotonicsHigh Speed Optical Communication Research

FeaturesDrive Voltage

Vπ 6.5Vpp (single ended) 3.25Vpp (dual drive)π pp ( g ) pp ( )

Small foot printForm Factor 125x12x13mm

Optical PerformanceBandwidth 65GHz

LX8900-W Block Diagram

Bandwidth 65GHzDC Extinction Ratio 20dBInsertion Loss 9dBOperating Wavelength C+L bands

TemperaturepMax Operating Temp 50C

ScheduleEngineering Samples NOW


LX8401 in 4.5”x3.5”LX8401 in 4.5”x3.5”Advanced


LX8900 60G Optical Eye PerformanceLX8900 60G Optical Eye Performance

60Gb/s with 13.3dB extinction ratio


LX8900 S11 & S21LX8900 S11 & S21

S parameters

Parameter U it V lParameter Unit Value

Bandwidth GHz >60.0

S11 < 30 GHz dB ‐15.0

S11 < 50 GHz dB ‐10.0


HighHigh‐‐Frequency Characterization Using Frequency Characterization Using Photonic TimePhotonic Time‐‐stretched A/D Converterstretched A/D Converter

DCF (-1310ps/nm)

ssin

gDCF (-10ps/nm)

Mode Lock Laser

ADC1-

GHz

EDFAPC

Polymer EOM d l t

PDOptical Filter

BW=20nm Pos

t Pro

ces

Modulator

• Used to characterize the performance of the polymer EO modulators within the range of 75GHz-110GHz.• The millimeter-wave signal was generated using a W-band klystron.• The TSADC consists of a mode-locked laser followed by a spool of dispersion compensating fiber with total dispersion value of -10 ps/nm


dispersion compensating fiber with total dispersion value of 10 ps/nm.

HighHigh‐‐Frequency Characterization Using Frequency Characterization Using Advanced

Photonic TimePhotonic Time‐‐stretched A/D Converterstretched A/D Converter

Measured waveform of 108GHz sinusoidal signal using TSADC. Calculated power penalty for two outputs of a single-

arm dual-output MZ modulator (solid and dashed blue curves). The red curve shows the summation of the


power penalty of the two outputs. The plot is generated based on the experiment parameters.

ConclusionConclusion

The performance of the modulator was observed to be unchanged over the W band which means theunchanged over the W‐band which means the bandwidth of the modulator extends up to 110GHz.

GigOptix is now sampling 2 EO polymer Mach‐ZehnderGigOptix is now sampling 2 EO polymer Mach‐Zehnder modulators

LX8400 is a small form factor 40G DPSK MZ modulator targeting high speed RF photonic and ultra‐long haul (ULH) telecom applications

LX8900 i 100G NRZ MZ d l i l hi h dLX8900 is a 100G NRZ MZ modulator targeting ultra high speed RF Photonic applications and advanced high speed telecom communication research


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GGOX OFC Presentation 100G EO Polymer Modulators 032510