Glasgow UpdateR. Bates. A. Blue, S Chambers, T. McMullen, C. Valentine & K. Wraight

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Update

• Electrical Characterisation• I-V’s

– Temperature dependence– Arrhenius plots

• C-V

• CCE– Analysis s/ware – Preliminary results

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Current-Voltage characteristics

Summary

• IV of all non-irradiated devices– Temperatures -45 to 20C

• IV of all irradiated devices

(except for gammas)– -20C– Some -45C to -20C

• Analysis on going

IV of all irradiated devices

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Capacitance - Voltage

Set-up– 0 – 600V– ΔV : 5V, Δt : 10 s– integration time : 2 s – measurement frequencies:

10kHz, 100kHz, 1MHz– Compliance : 0.1mA– Model : C_sR_s

• Vfd = 350V• Cfd = 24pF

– (23.8,23.85,24.3pF)

Non-irradiated (3 different samples)

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Charge collection update

• We had an issue with Alibava analysis for a while– Using newest version of Alibava DAQ– Data sets not being read by older analysis code (sin_preguntas and

idk-ana – from Ljubljana)– New sin-preguntas does not give much information, only pulse

height spectra– Edited idk-ana code to read new data format

• This stalled testing as alignment is done by hand in our system and we need analyzed data to feedback on this

• Second issue with HV breakdown at >700V was observed in irradiated devices– Eventually tracked down to a current path from the detector mount to

system temperature sensor. Fixed!

• In situ annealing verified without silicon sensor

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Un-irradiated calibration

BZ3C_P12• System calibrated with un-

irradiated sensor (BZ3C_P12)– +20C Full_CC = 101 ADC– -20C Full_CC = 116 ADC(ignored 500V point)

– Note an issue with sensor breakdown at >550V, but fine for plateau

• Measurements of post –radiation resume 18/3/2014

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Summary