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G.Poggi – EURORIB08 – June 2008
FAZIA Collaboration: recent advances and perspectivesFAZIA Collaboration: recent advances and perspectives
R&D Phase I of FAZIA and optimizing Z and A identification by means of Pulse Shape in Silicon:
• Basic detection module: Si-Si-CsI (non-standard)
• Charge and current preamplifier (PACI)
• Fully digital electronics for Energy, Pulse Shape and Timing has been developed
• Pulse Shape and Silicon material: importance of controlling channeling and doping uniformity
• First prototypes tested in-beam
• Pulse Shape: what are the thresholds (E, Z and A)?
• Pulse Shape + ToF (SPIRAL2 PP + ….)
• Pulse Shape for low energy hydrogen and helium isotopes
FAZIA Phase II dedicated to implement results of Phase I:
• Prototype Array (a small scale version of FAZIA)
• New Front End Electronics
R&D Phase I of FAZIA and optimizing Z and A identification by means of Pulse Shape in Silicon:
• Basic detection module: Si-Si-CsI (non-standard)
• Charge and current preamplifier (PACI)
• Fully digital electronics for Energy, Pulse Shape and Timing has been developed
• Pulse Shape and Silicon material: importance of controlling channeling and doping uniformity
• First prototypes tested in-beam
• Pulse Shape: what are the thresholds (E, Z and A)?
• Pulse Shape + ToF (SPIRAL2 PP + ….)
• Pulse Shape for low energy hydrogen and helium isotopes
FAZIA Phase II dedicated to implement results of Phase I:
• Prototype Array (a small scale version of FAZIA)
• New Front End Electronics
In this talk:
Not discussed, only reminded
Discussed
Briefly addressed and commented
The FAZIA (Four Pi Z and A Identification Array) initiative was formalized in 2006.
Members are from France, Italy, Poland, Spain, Rumania (+Canada, India and US).
The goal of the present Phase I: studying and testing new solutions, checking if possible to make a step forward toward the “ideal” detector array for Dynamics and
Thermodynamics of heavy-ion collisions at Fermi energies and below
http://fazia.in2p3.fr
The FAZIA (Four Pi Z and A Identification Array) initiative was formalized in 2006.
Members are from France, Italy, Poland, Spain, Rumania (+Canada, India and US).
The goal of the present Phase I: studying and testing new solutions, checking if possible to make a step forward toward the “ideal” detector array for Dynamics and
Thermodynamics of heavy-ion collisions at Fermi energies and below
http://fazia.in2p3.fr
The FAZIA InitiativeThe FAZIA Initiative
FAZIA PHASE I: Working Groups
1. Modeling current signals and Pulse Shape Analysis in Silicon (L.Bardelli)
2. Physics cases (G.Verde)
3. Front End Electronics (P.Edelbruck)
4. Acquisition (A.Ordine)
5. CsI(Tl) crystals (M.Parlog)
6. Single Chip Telescope (G.P.)
7. Design, Detector, Integration and Calibration (M.Bruno)
8. Web site (O.Lopez)
FAZIA PHASE I: Working Groups
1. Modeling current signals and Pulse Shape Analysis in Silicon (L.Bardelli)
2. Physics cases (G.Verde)
3. Front End Electronics (P.Edelbruck)
4. Acquisition (A.Ordine)
5. CsI(Tl) crystals (M.Parlog)
6. Single Chip Telescope (G.P.)
7. Design, Detector, Integration and Calibration (M.Bruno)
8. Web site (O.Lopez)
CsI(Tl)H.I.
ΔE1 ΔE2
Si Si
?
300μm 500 / 700μm 30-100 mm
G.Poggi – EURORIB08 – June 2008
B CN
O
Beyond E-E: Z and A Identification with Pulse ShapeBeyond E-E: Z and A Identification with Pulse Shape
Energy vs rise-time of charge signals permits good Z identification of stopped particles (further identification criteria under study)
A threshold exists for Z identification, for small particle penetration (a few tens of μm)
Evidences exist that isotope separation (A identification) is possible above a certain penetration.
Why Pulse Shape in Silicon is possible?
• Stopped particles with the same energy and different Z (and A) show charge/current signals having unlike time evolution because ranges and plasma erosion times differ
• Better identification for reverse-mount Silicon
Why Pulse Shape in Silicon is possible?
• Stopped particles with the same energy and different Z (and A) show charge/current signals having unlike time evolution because ranges and plasma erosion times differ
• Better identification for reverse-mount Silicon
First fully digital implementation of PSA in Silicon: L.Bardelli et al: NP A746 (2004) 272
First fully digital implementation of PSA in Silicon: L.Bardelli et al: NP A746 (2004) 272
G.Poggi – EURORIB08 – June 2008
Channeling and doping non -uniformity in Si for PSA Channeling and doping non -uniformity in Si for PSA
G.Poggi – EURORIB08 – June 2008
Only very small scale implementation of high-quality PSA are reported in the literature (see Mutterer et al IEEE TNS 47 (2000) 756 )
Only very small scale implementation of high-quality PSA are reported in the literature (see Mutterer et al IEEE TNS 47 (2000) 756 )
nsC
urr
ent
[a.u
]
82Se @ 408 MeV
Elastic scattering on Au
~100 mm2 Silicon
Channeling and doping non -uniformity in Si for PSA Channeling and doping non -uniformity in Si for PSA
Basing on an older work (G.P. et al. NIM B119 (1996) 375) on channeling effects on stopped h.i., we suspected that channeling (and Silicon doping non-uniformity) was originating these instabilities.
Could this also explain overall irreproducibility of PSA quality observed in the past?
Basing on an older work (G.P. et al. NIM B119 (1996) 375) on channeling effects on stopped h.i., we suspected that channeling (and Silicon doping non-uniformity) was originating these instabilities.
Could this also explain overall irreproducibility of PSA quality observed in the past?
G.Poggi – EURORIB08 – June 2008
Only very small scale implementation of high-quality PSA are reported in the literature (see Mutterer et al IEEE TNS 47 (2000) 756 )
Only very small scale implementation of high-quality PSA are reported in the literature (see Mutterer et al IEEE TNS 47 (2000) 756 )
Early FAZIA tests of our DPSA in Silicon with mono-energetic heavy-ions showed fluctuations in current and charge signal shape (also somewhat irreproducible)
Early FAZIA tests of our DPSA in Silicon with mono-energetic heavy-ions showed fluctuations in current and charge signal shape (also somewhat irreproducible)
The key experiment: collimated Silicon detectors mounted on a remote-controlled precision goniometer. Signal behavior as a function of the impinging ion direction with respect to crystal axes.
Both <100> and <111> silicon detectors have been studied
The key experiment: collimated Silicon detectors mounted on a remote-controlled precision goniometer. Signal behavior as a function of the impinging ion direction with respect to crystal axes.
Both <100> and <111> silicon detectors have been studied
nsC
urr
ent
[a.u
]
82Se @ 408 MeV
Elastic scattering on Au
Signal Risetime and Channeling in <100> and <111> SiliconSignal Risetime and Channeling in <100> and <111> Silicon
Our findings for “Channeled” or “random-entering” stopped ions
Channeled ions: strongly fluctuating rise-time due to…
enhanced variations of range and plasma erosion time for directions close to crystal channels, which are basically…
Our findings for “Channeled” or “random-entering” stopped ions
Channeled ions: strongly fluctuating rise-time due to…
enhanced variations of range and plasma erosion time for directions close to crystal channels, which are basically…
G.Poggi – EURORIB08 – June 2008
“Channeled”
“Channeled”
ns
80Se @ 408 MeV
Signal Risetime and Channeling in <100> and <111> SiliconSignal Risetime and Channeling in <100> and <111> Silicon
G.Poggi – EURORIB08 – June 2008
If detectors subtend ~1° and are mounted in the usual way, most ions may experience abnormal fluctuations, given the large channeling probability (ψ½ = 0.5°-1°)
Channeling in Silicon is observed for front and rear injection
If detectors subtend ~1° and are mounted in the usual way, most ions may experience abnormal fluctuations, given the large channeling probability (ψ½ = 0.5°-1°)
Channeling in Silicon is observed for front and rear injection
“Channeled”
ns
80Se @ 408 MeV
“Random”
“Random”
ns
80Se @ 408 MeV
Risetime-fluctuations vs gonio-angles
<111> Si Flu
ctu
ati
on
in
cre
as
es
For <111> Silicon: typically 7° off-axis
Our findings for “Channeled” or “random-entering” stopped ions
Channeled ions: strongly fluctuating rise-time due to…
enhanced variations of range and plasma erosion time for directions close to crystal channels, which are basically…
… absent for random directions
L.Bardelli et al; submitted to NIMA
Our findings for “Channeled” or “random-entering” stopped ions
Channeled ions: strongly fluctuating rise-time due to…
enhanced variations of range and plasma erosion time for directions close to crystal channels, which are basically…
… absent for random directions
L.Bardelli et al; submitted to NIMA
Signal Risetime and Channeling in <100> and <111> SiliconSignal Risetime and Channeling in <100> and <111> Silicon
The mandatory recipe for good Pulse Shape
Analysis:
USE PURPOSELY ORIENTED SILICON
DETECTORS for ALWAYS MAINTAINING RANDOM
INCIDENCE!
We have ordered indeed special-cut
nTD wafers
The mandatory recipe for good Pulse Shape
Analysis:
USE PURPOSELY ORIENTED SILICON
DETECTORS for ALWAYS MAINTAINING RANDOM
INCIDENCE!
We have ordered indeed special-cut
nTD wafers
80Se @ 408 MeV <100> Silicon
Cu
rren
t [a
.u] “Channeled”
ns
“Random”
ns
Irreproducibility: minor geometry variations of the setup change the fraction of channeled ions
Unfortunately this does not explain everything… The Silicon doping uniformity must also be
controlled up to an unprecedented levelThis information is basically not available from
(detector/wafer) manufacturers
G.Poggi – EURORIB08 – June 2008
L.Bardelli et al: submitted to NIMA
L.Bardelli et al: submitted to NIMA
Fixed impact point
Various bias voltage
Fixed impact point
Various bias voltage
Over depletion
Full bias
Slightly under-bias
T_rise
Resistivity measurements (doping uniformity) in SiliconResistivity measurements (doping uniformity) in Silicon
A newly developed procedure to map Silicon resistivity, based on Transient Current Technique has been systematically applied to our detectors
A newly developed procedure to map Silicon resistivity, based on Transient Current Technique has been systematically applied to our detectors
Reverse-mount Silicon det.
Various applied voltages: from under- to over bias
Narrow UV laser pulse (ns)
RSi detector
G.Poggi – EURORIB08 – June 2008
Fixed impact point
Various bias voltage
Fixed impact point
Various bias voltage
Over depletion
Full bias
Slightly under-bias
T_rise
Resistivity measurements (doping uniformity) in SiliconResistivity measurements (doping uniformity) in Silicon
Reverse-mount Silicon det.
Various applied voltages: from under- to over bias
Narrow UV laser pulse (ns)
RSi detector
G.Poggi – EURORIB08 – June 2008
A typical detector: ~9% non-uniformity with
striations (mm-1 spatial frequency)
A newly developed procedure to map Silicon resistivity, based on Transient Current Technique has been systematically applied to our detectors
A newly developed procedure to map Silicon resistivity, based on Transient Current Technique has been systematically applied to our detectors
Fixed impact point
Various bias voltage
Fixed impact point
Various bias voltage
Over depletion
Full bias
Slightly under-bias
T_rise
Resistivity measurements (doping uniformity) in SiliconResistivity measurements (doping uniformity) in Silicon
Reverse-mount Silicon det.
Various applied voltages: from under- to over bias
Narrow UV laser pulse (ns)
RSi detector
G.Poggi – EURORIB08 – June 2008
A non typical, very good detector:
~1% non-uniformity with
undetectable striations
A newly developed procedure to map Silicon resistivity, based on Transient Current Technique has been systematically applied to our detectors
A newly developed procedure to map Silicon resistivity, based on Transient Current Technique has been systematically applied to our detectors
Memento: good resistivity uniformity good uniformity of electric field position independence of timing
PSA test run with full control of channeling and resistivity
32S + 27Al @ 474 MeV (LNL, December 2007)
PSA test run with full control of channeling and resistivity
32S + 27Al @ 474 MeV (LNL, December 2007)
Si-Si, Si-CsI and “Single Chip Tel” have been used. All Silicons were characterized for uniformity, were un-collimated and have the “FAZIA” dimensions(400mm2)
PACI preamps
A fully digital FEE for charge and current PSA has been developed (Orsay+Florence) for Phase I
Si-Si, Si-CsI and “Single Chip Tel” have been used. All Silicons were characterized for uniformity, were un-collimated and have the “FAZIA” dimensions(400mm2)
PACI preamps
A fully digital FEE for charge and current PSA has been developed (Orsay+Florence) for Phase I
Channeling control for the experiment:
Detectors made of random-cut Silicon were not yet available
All detectors are cut 0° off <111> axis
Channeling--random control obtained by proper 7° detector tilting (simple mechanical adjustment permits to switch from unwanted channeling to desired “random” orientations)
Channeling control for the experiment:
Detectors made of random-cut Silicon were not yet available
All detectors are cut 0° off <111> axis
Channeling--random control obtained by proper 7° detector tilting (simple mechanical adjustment permits to switch from unwanted channeling to desired “random” orientations)
G.Poggi – EURORIB08 – June 2008
Channeled ions Random entering ions
Quasi-random entering ionsWrong detector mounting causes some residual planar channeling
Wrong detector mounting causes some residual planar channeling
32S + 27Al @ 474 MeV (December 2007)
Channel or not to channel?
32S + 27Al @ 474 MeV (December 2007)
Channel or not to channel?
300
μ
500
μ
32S +27Al @ 474 MeV
Pulser
Very uniform 500μm Silicon
Standard mounting, i.e. perpendicular ion incidence is expected to induce channeling
Satisfactory Z identification over the full examined range
Very uniform 500μm Silicon
Standard mounting, i.e. perpendicular ion incidence is expected to induce channeling
Satisfactory Z identification over the full examined range
Normally impinging ions
DIGITAL PULSE SHAPE on 500μ Silicon
Full scale: ~1.5 GeV
Be
B
C
N
O
F
NeNa
Are channeling effects really important?
G.Poggi – EURORIB08 – June 2008
32S +27Al @ 474 MeV
Pulser
300
μ
500
μ
Very uniform 500μm Silicon
Channeling was partly spoiling overall identification
Random: 7° tilt angle
Mass identification clearly shows up!
Very uniform 500μm Silicon
Channeling was partly spoiling overall identification
Random: 7° tilt angle
Mass identification clearly shows up!
Random impinging ions
DIGITAL PULSE SHAPE on 500μ Silicon
Full scale: ~1.5 GeV
Be
B
C
N
O
F
NeNa
Yes, they are! Channeling was spoiling mass identification
32S + 27Al @ 474 MeV (December 2007)
Channel or not to channel?
32S + 27Al @ 474 MeV (December 2007)
Channel or not to channel?
G.Poggi – EURORIB08 – June 2008
32S +27Al @ 474 MeV
500
μ
Normally impinging ions
DIGITAL PULSE SHAPE on 500μ Silicon
Full scale: ~ 4 GeV
BeB
CN
OF
NeNa
Mg
AlSi
P
SCl
Ar K
32S + 27Al @ 474 MeV (December 2007)
Channel or not to channel?
32S + 27Al @ 474 MeV (December 2007)
Channel or not to channel?
Very uniform 500μm Silicon
Standard mounting, i.e. perpendicular ion incidence
Satisfactory Z identification over the full examined range
Note the very high energy range
Very uniform 500μm Silicon
Standard mounting, i.e. perpendicular ion incidence
Satisfactory Z identification over the full examined range
Note the very high energy range
G.Poggi – EURORIB08 – June 2008
Unity counts removed
500
μ
Random impinging ions
DIGITAL PULSE SHAPE on 500μ Silicon
Full scale: ~ 4 GeV
Unity counts removed
32S +27Al @ 474 MeV
BeB
CN
OF
NeNa
Mg
AlSi
P
SCl
Ar K
32S + 27Al @ 474 MeV (December 2007)
Channel or not to channel?
32S + 27Al @ 474 MeV (December 2007)
Channel or not to channel?
Very uniform 500μm Silicon
Channeling was partly spoiling identification
“Random” mounting
Very uniform 500μm Silicon
Channeling was partly spoiling identification
“Random” mounting
G.Poggi – EURORIB08 – June 2008
DIGITAL PULSE SHAPE on 500μm and 300μm Silicons with similar field and different doping non-uniformities
300μm: ~ 4 GeV full scale
500μm: ~ 4 GeV full scale
32S + 27Al @ 474 MeV (December 2007): doping uniformity32S + 27Al @ 474 MeV (December 2007): doping uniformity
G.Poggi – EURORIB08 – June 2008
Quasi-random, but non-uniform Silicon shows reasonable Z resolution
Quasi-random, but non-uniform Silicon shows reasonable Z resolution
Quasi-random, very uniform Silicon shows clean Z and partial A resolution
Quasi-random, very uniform Silicon shows clean Z and partial A resolution
250V on 500μm
1% non-uniformity
BeB
CN
OF
NeNaMg
Al SiPS Cl Ar
K Ca
500
μ
140V on 300μm
9.4% non-uniformity
BeBC
NO FNe
NaMgAl
SiP S
Cl?Ar?
300
μ
32S + 27Al @ 474 MeV (December 2007): doping uniformity32S + 27Al @ 474 MeV (December 2007): doping uniformity
G.Poggi – EURORIB08 – June 2008
140V on 300μm
9.4% non-uniformity
BeBC
NO FNe
NaMgAl
SiP S
Cl?Ar?
140V on 300μm
9.4% non-uniformityC
N
O
F
Ne
NaMg
Al
300
μ50
0 μ
Quasi-random, but non-uniform Silicon shows reasonable Z resolution
Quasi-random, but non-uniform Silicon shows reasonable Z resolution
Quasi-random, very uniform Silicon shows clean Z and partial A resolution
Quasi-random, very uniform Silicon shows clean Z and partial A resolution
DIGITAL PULSE SHAPE on 500μm and 300μm Silicons with similar field and different doping non-uniformities
300μm: ~ 4 GeV full scale
500μm: ~ 4 GeV full scale
250V on 500μm
1% non-uniformity
BeB
CN
OF
NeNaMg
Al SiPS Cl Ar
K Ca
500
μ
C
N
O
F
Ne
NaMg
Al
250V on 500μm
1% non-uniformity
Preliminary conclusions:
with uniformity-controlled and “random”-oriented Silicon detectors, Digital PSA developed in FAZIA permits unity charge resolution at least up to Z ~ 30 (probably >50), with energy thresholds of about 3MeV/n for C and 4MeV/n for Ne (about 30-40 μm of Silicon)
DPSA gives mass resolution for Z<15-20 (also based on short-run results with 58,60Ni) particles, with ranges > 100μm (?) of Silicon
ToF might significantly extend this mass resolution
Preliminary conclusions:
with uniformity-controlled and “random”-oriented Silicon detectors, Digital PSA developed in FAZIA permits unity charge resolution at least up to Z ~ 30 (probably >50), with energy thresholds of about 3MeV/n for C and 4MeV/n for Ne (about 30-40 μm of Silicon)
DPSA gives mass resolution for Z<15-20 (also based on short-run results with 58,60Ni) particles, with ranges > 100μm (?) of Silicon
ToF might significantly extend this mass resolution
FAZIA Phase I: Digital Pulse Shape on SiliconFAZIA Phase I: Digital Pulse Shape on Silicon
G.Poggi – EURORIB08 – June 2008
58Ni
60Ni
Frankly, we are not unhappy about these preliminary results…
Best algorithms for DPSA are under study within FAZIA WG1 (S.Barlini et al: in preparation)
Adding ToF to current or charge risetime for extending mass resolution of low energy stopped particles
Trying to get ToF even with non-optimal time structure of the pulsed beam (supported by Spiral2 PP)
Addressing Digital Pulse Shape for Silicon strip and Z = 1,2 ions (supported by Spiral2 PP)
Future experiments: LNL, LNS, GANIL…
Best algorithms for DPSA are under study within FAZIA WG1 (S.Barlini et al: in preparation)
Adding ToF to current or charge risetime for extending mass resolution of low energy stopped particles
Trying to get ToF even with non-optimal time structure of the pulsed beam (supported by Spiral2 PP)
Addressing Digital Pulse Shape for Silicon strip and Z = 1,2 ions (supported by Spiral2 PP)
Future experiments: LNL, LNS, GANIL…
FAZIA Phase I: next stepsFAZIA Phase I: next steps
G.Poggi – EURORIB08 – June 2008
3rd vs 2nd moment of current signals
Y axis: measured energy
X axis: measured rise-time + simulated ToF over 1.1m and 0.5 ns FWHM (smoothly merged)
Y axis: measured energy
X axis: measured rise-time + simulated ToF over 1.1m and 0.5 ns FWHM (smoothly merged)
Exp+Sim
~104 telescopes
Phase II (from 2008 till 2012):
• Prototype Array (20-30 modules) to couple with existing arrays and do Physics out of it
• Implement the solutions devised and tested on Phase I
• adopt electronic and mechanical solutions as close as possible to the final 4π configuration (e.g. neutron detection feasibility and transportability)
• Phase III (from 2012 on):
• Build a Demonstrator, covering a significant fraction of 4π, e.g C2+C1
Phase II (from 2008 till 2012):
• Prototype Array (20-30 modules) to couple with existing arrays and do Physics out of it
• Implement the solutions devised and tested on Phase I
• adopt electronic and mechanical solutions as close as possible to the final 4π configuration (e.g. neutron detection feasibility and transportability)
• Phase III (from 2012 on):
• Build a Demonstrator, covering a significant fraction of 4π, e.g C2+C1
FAZIA R&D Phase II (and Phase III)FAZIA R&D Phase II (and Phase III)
A possible final FAZIA Array (JM Gautier-LPC)
x 8
G.Poggi – EURORIB08 – June 2008
C1C2C3
C4
FEE structure under vacuum to simplify connections (the very issue under study: power removal)
Bidirectional fast (2.2 Gb/s) fiber optics guarantees synchronous trigger info transmission and transfer of samples (data).
The last level provides trigger construction / validation / event labeling + sample dispatching to DAQ
Fast FPGA-based elaboration and protocol management
FEE structure under vacuum to simplify connections (the very issue under study: power removal)
Bidirectional fast (2.2 Gb/s) fiber optics guarantees synchronous trigger info transmission and transfer of samples (data).
The last level provides trigger construction / validation / event labeling + sample dispatching to DAQ
Fast FPGA-based elaboration and protocol management
FAZIA R&D Phase II: the FEEFAZIA R&D Phase II: the FEE
G.Poggi – EURORIB08 – June 2008
..640....16.. ..16.. ..16..
First Level FEE Unit
First Level FEE Unit
First Level FEE Unit
Vacuum
Air
Trigger and data collector + dispatcher
Trigger info and samples
2.2 Gb/s
Trigger validation and slow control
2.2 Gb/s
Ethernet
DAQTrigger Box
Trigger info
Trigger validation and event labeling..64.. Samples
Trigger decision (400 ns)
Trigger decision (400 ns)
Data transmission to PC farm
Data transmission to PC farm
Trigger/samples separation and trigger elaboration
Trigger/samples separation and trigger elaboration
Fast and slow Energy shaping
Local digital trigger generation (100 ns)+ second level decision (over in 2-3 μs) + data sending (asynchronous)
Fast and slow Energy shaping
Local digital trigger generation (100 ns)+ second level decision (over in 2-3 μs) + data sending (asynchronous)
The FAZIA organizationThe FAZIA organization
FAZIA Project Management Board: B.Borderie, R. Borcea, R.Bougault, A.Chbihi, F.Gramegna, T.Kozik, I.Martel Bravo, E.Rosato, G.P. and R.Roy
Sc. Coordinators: G.P. and R.Bougault
Tech. Coordinator: P.Edelbruck
FAZIA Project Management Board: B.Borderie, R. Borcea, R.Bougault, A.Chbihi, F.Gramegna, T.Kozik, I.Martel Bravo, E.Rosato, G.P. and R.Roy
Sc. Coordinators: G.P. and R.Bougault
Tech. Coordinator: P.Edelbruck
FAZIA Working Groups
1. Modeling current signals and Pulse Shape Analysis (L.Bardelli)
2. Physics cases (G.Verde)
3. Front End Electronics (P.Edelbruck)
4. Acquisition (A.Ordine)
5. CsI(Tl) crystals (M.Parlog)
6. Single Chip Telescope (G.P.)
7. Design, Detector, Integration and Calibration (M.Bruno)
8. Web site (O.Lopez)
FAZIA Working Groups
1. Modeling current signals and Pulse Shape Analysis (L.Bardelli)
2. Physics cases (G.Verde)
3. Front End Electronics (P.Edelbruck)
4. Acquisition (A.Ordine)
5. CsI(Tl) crystals (M.Parlog)
6. Single Chip Telescope (G.P.)
7. Design, Detector, Integration and Calibration (M.Bruno)
8. Web site (O.Lopez)
A dedicated Discussion Group is studying the Physics requirements for the Trigger (M.F.Rivet and A.Olmi) to implement with our electronic engineers
Two more slides on “synergies”
G.Poggi – EURORIB08 – June 2008
G.Poggi – EURORIB08 – June 2008
Questions fitting very well with our Topic
Is channeling an issue only for PSA-based identification?
How about channeling and more standard identification approaches?
Significant effects are expected in E-E: channeling may change E, as many of us have seen when punching-through elastic
scattering is measured
This effect is less clearly appreciated in other cases, but still present
Synergies in instrumentationSynergies in instrumentation
Elastic scattering in 93Nb+116Sn @ 30 MeV/n
E
E
32S +27Al @ 474 MeV
300
μ
500
μ
Normally impinging ions
Digital E-E 300-500μ Silicon (reverse field)
Full scale E: ~4GeV
Full scale E: ~1.5 GeV
BeB
C
N
O
F
Ne
Na
Li
G.Poggi – EURORIB08 – June 2008
32S + 27Al @ 474 MeV (December 2007)32S + 27Al @ 474 MeV (December 2007)
Telescope mounted for standard normal incidence
Why so-so resolution?
Never happened to you?
Telescope mounted for standard normal incidence
Why so-so resolution?
Never happened to you?
Try a little, proper detector tilting …
Unity counts removed
32S +27Al @ 474 MeV
300
μ
500
μ
Random impinging ions
Digital E-E 300-500μ Silicon (reverse mount)
Full scale E: ~4GeV
Full scale E: ~1.5 GeV
Telescope mounted for 7° incidence (Quasi-random configuration)
Telescope mounted for 7° incidence (Quasi-random configuration)
BeB
C
N
O
F
Ne
Na
Li
32S + 27Al @ 474 MeV (December 2007)
Beneficial effects of random incidence for standard E-E identification
32S + 27Al @ 474 MeV (December 2007)
Beneficial effects of random incidence for standard E-E identification
G.Poggi – EURORIB08 – June 2008
… say channeling “goodbye”
We believe that one should keep this result in mind for any future E(Si)-E implementation. Do not
overlook the old recommendation of 7° off-axis cut and double check
what you buy.
Thanks to the audience Unity counts removed