GraphenePI-KEM is a specialist distributor of Graphene products and services, supplying high quality, cost effective graphene in the form of CVD Films, Graphene Oxide and Devices.

Substrate Specifications available

Multilayer Graphene (10mm x 10mm)• Bilayer on SiO2 / Si

• Bilayer on Quartz

• Bilayer on PET

• Trilayer on SiO2 / Si

• Trilayer on Quartz

• Trilayer on PET

Monolayer Graphene on Copper (Cu) with/and without PMMA Coating 6” or 4” Wafer

• 10mm x 10mm (4 pack)

• 12mm circular (4 pack)

• 1 inch x 1 inch (single)

• 60mm x 40mm (single)

Monolayer Graphene on Quartz• 10mm x 10mm (4 pack)

• 1 inch x 1 inch (single)

• 4 inch wafer (single)

Monolayer Graphene on PET

• 10mm x 10mm (4 pack)

• 1 inch x 1 inch (single)

• 4 inch wafer (single)

• 6 inch wafer (single)

Suspended Monolayer Graphene on Cavities (10mm x 10mm)

Custom product; We send your substrate to Graphenea who use their innovative method to transfer large area CVD graphene monolayer on top of the cavities.

Monolayer Graphene on your SubstrateCustom product; We send your substrate to Graphenea who use their innovative method to transfer the graphene monolayer on to your substrate.

Suspended Monolayer/Bilayer Graphene on TEM Grids (Quantifold Gold 4 Pack)

The monolayer graphene is grown by CVD and transferred onto a Quantifoil TEM Grid. The graphene is suspended over 2μm holes and suspended Bilayer on TEM Grids.

Easy Transfer; Monolayer Graphene on Polymer Film

• 10mm x 10mm

• 1 inch x 1 inch

Transferable monolayer graphene for you to easily apply to your substrate.

Chemical Vapor Deposition (CVD) methods produce high purity, high quality graphene as a common solution to the deposition of films within the semiconductor and optoelectronics industries.

CVD Films

We distribute on behalf of Graphenea, a leading manufacturer in high quality graphene production for research and commercialisation.

Forms Specifications

Graphene Oxide0.05 -1wt%, Water Dispersion 250ml, Various wt% concentrations (0.125g GO - 2.5g GO)

The raw material - graphite - is chemically processed to obtain monolayer flakes of graphene oxide.Graphene Oxide

Water Dispersion (0.4wt% concentration) 250ml, 1000ml, 2500ml and 5000ml, Various wt% concentrations (4g of GO to 40g of GO)

Reduced Graphene Oxide (1 gram)

With a highly effective electrical conductivity, Reduced Graphene Oxide (rGO) is obtained by reducing Graphene Oxide (GO). Created chemically, thermally or via irradiation (UV or IR) to generate a powder form.

Graphene Oxide FilmDiameter 4cm, Thick 10-13um, Non-conductive

The Graphene Oxide Film is prepared by the filtration of a Monolayer Graphene Oxide dispersion.

www.PI-KEM.co.ukFor further details on any of our Graphene products or services, please contact us on + 44 (0)1827 259250

Access to wafer-scale graphene with the ability to integrate graphene devices with existing technological processes are key pillars for implementing graphene photonics in practice, therefore the below G-FET & G-FAB products and services are available to assist development.

PI-KEM Limited, Unit 18-20 Tame Valley Business Centre, Magnus, Tamworth, B77 5BY, UK Registered in England with company number: 04215228 VAT: GB 572885985 Version2 11.2019

Graphene Devices & Services

Graphene OxideGraphene Oxide is noted for its mechanical and thermal properties.

Device/ Service Specification

G-FET-S10 The G-FET-S10 chip provides 36 graphene devices distributed in a grid pattern on the chip. Thirty devices have a Hall-bar geometry and six have a 2-probe geometry. The Hall-bar devices can be used for Hall-bar measurements as well as 4-probe and 2-probe devices.

G-FET-S20 The G-FET-S20 chip provides 36 graphene devices distributed in four quadrants with the devices in the centre of the chip and the probe pads located near the periphery of the chip. All devices are of a 2-probe device geometry. It is arranged to allow the application of a liquid drop on top of the graphene devices without covering the pads.

G-FAB The Graphene Foundry, or G-FAB service provides buyers with the ability to order complete-ly bespoke graphene circuits printed to their own specifications on wafers of up to 6”. Ni/Al edge contacts. Minimum feature 5µm, mask alignment accuracy ±3µm.