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2016-11-24 1 2016-11-24 High Power Infrared Emitter (850 nm) Version 1.6 SFH 4250 Ordering Information Features: High forward current allowed at high temperature High Power Infrared LED Short switching times The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications Infrared Illumination for cameras IR data transmission Sensor technology Notes Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Type: Radiant Intensity Ordering Code I e [mW/sr] I F = 100 mA, t p = 20 ms SFH 4250 20 (≥ 10) Q65110A2465 SFH 4250-R2S 12.5 ... 32 Q65110A7238 SFH 4250-S 16 ... 32 Q65111A2957 Note: Measured at a solid angle of Ω = 0.01 sr

High Power Infrared Emitter (850 nm) Version 1.6 … · High Power Infrared Emitter (850 nm) Version 1.6 ... After this bag is opened, devices that will be subjected to infraredreflow,

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Page 1: High Power Infrared Emitter (850 nm) Version 1.6 … · High Power Infrared Emitter (850 nm) Version 1.6 ... After this bag is opened, devices that will be subjected to infraredreflow,

2016-11-24 1

2016-11-24

High Power Infrared Emitter (850 nm)

Version 1.6

SFH 4250

Ordering Information

Features:

• High forward current allowed at high temperature

• High Power Infrared LED

• Short switching times

• The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification

for Automotive Grade Discrete Semiconductors.

Applications

• Infrared Illumination for cameras

• IR data transmission

• Sensor technology

Notes

Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which

can be hazardous to the human eye. Products which incorporate these devices have to follow the safety

precautions given in IEC 60825-1 and IEC 62471.

Type: Radiant Intensity Ordering Code

Ie [mW/sr]

IF= 100 mA, tp= 20 ms

SFH 4250 20 (≥ 10) Q65110A2465

SFH 4250-R2S 12.5 ... 32 Q65110A7238

SFH 4250-S 16 ... 32 Q65111A2957

Note: Measured at a solid angle of Ω = 0.01 sr

Page 2: High Power Infrared Emitter (850 nm) Version 1.6 … · High Power Infrared Emitter (850 nm) Version 1.6 ... After this bag is opened, devices that will be subjected to infraredreflow,

2016-11-24 2

Version 1.6 SFH 4250

Maximum Ratings (TA = 25 °C)

Characteristics (TA = 25 °C)

Parameter Symbol Values Unit

Operation and storage temperature range Top; Tstg -40 ... 100 °C

Reverse voltage VR 5 V

Forward current IF 100 mA

Surge current

(tp = 100 µs, D = 0)

IFSM 1 A

Power consumption Ptot 180 mW

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

VESD 2 kV

Thermal resistance junction - ambient 1) page 12 RthJA 300 K / W

Thermal resistance junction - soldering point 2) page 12

RthJS 140 K / W

Parameter Symbol Values Unit

Peak wavelength

(IF = 100 mA, tp = 20 ms)

(typ) λpeak 860 nm

Centroid wavelength

(IF = 100 mA, tp = 20 ms)

(typ) λcentroid 850 nm

Spectral bandwidth at 50% of Imax

(IF = 100 mA, tp = 20 ms)

(typ) ∆λ 30 nm

Half angle (typ) ϕ ± 60 °

Dimensions of active chip area (typ) L x W 0.3 x 0.3 mm x

mm

Rise and fall time of Ie ( 10% and 90% of Ie max)

(IF = 100 mA, RL = 50 Ω)

(typ) tr, tf 12 ns

Forward voltage

(IF = 100 mA, tp = 20 ms)

(typ (max)) VF 1.5 (≤ 1.8) V

Forward voltage

(IF = 1 A, tp = 100 µs)

(typ (max)) VF 2.4 (≤ 3) V

Reverse current

(VR = 5 V)

IR not designed for

reverse operation

µA

Total radiant flux

(IF = 100 mA, tp = 20 ms)

(typ) Φe 60 mW

Page 3: High Power Infrared Emitter (850 nm) Version 1.6 … · High Power Infrared Emitter (850 nm) Version 1.6 ... After this bag is opened, devices that will be subjected to infraredreflow,

Version 1.6 SFH 4250

2016-11-24 3

Grouping (TA = 25 °C)

Temperature coefficient of Ie or Φe

(IF = 100 mA, tp = 20 ms)

(typ) TCI -0.5 % / K

Temperature coefficient of VF

(IF = 100 mA, tp = 20 ms)

(typ) TCV -0.7 mV / K

Temperature coefficient of wavelength

(IF = 100 mA, tp = 20 ms)

(typ) TCλ 0.3 nm / K

Group Min Radiant Intensity Max Radiant Intensity Typ Radiant Intensity

IF= 100 mA, tp= 20 ms IF= 100 mA, tp= 20 ms IF = 1 A, tp = 25 µs

Ie, min [mW / sr] Ie, max [mW / sr] Ie, typ [mW / sr]

SFH 4250-R 10 20 120

SFH 4250-R2 12.5 20 130

SFH 4250-S 16 32 190

Note: measured at a solid angle of Ω = 0.01 sr

Only one group in one packing unit (variation lower 2:1).

Relative Spectral Emission 3) page 12

Irel = f(λ), TA = 25°CRadiant Intensity 3) page 12

Ie / Ie(100 mA) = f(IF), single pulse, tp = 25 µs, TA= 25°C

Parameter Symbol Values Unit

7000

nm

%

OHF04132

20

40

60

80

100

950750 800 850

Irel

λ

OHL01715

10-3

mA

101

010

5

5

10-1

-2

5

10

e

e (100 mA)

II

IF

010 110 210 3105 5

Page 4: High Power Infrared Emitter (850 nm) Version 1.6 … · High Power Infrared Emitter (850 nm) Version 1.6 ... After this bag is opened, devices that will be subjected to infraredreflow,

2016-11-24 4

Version 1.6 SFH 4250

Max. Permissible Forward Current

IF, max = f(TA), RthJA = 300 K / WForward Current 3) page 12

IF = f(VF), single pulse, tp = 100 µs, TA= 25°C

Permissible Pulse Handling Capability

IF = f(tp), TA = 25 °C, duty cycle D = parameterPermissible Pulse Handling Capability

IF = f(tp), TA = 85 °C, duty cycle D = parameter

00

˚C

T

IF

mA

OHL01716

A

20

40

60

80

100

120

20 40 60 80 120

OHL01713

FI

10-4

0.5 1 1.5 2 2.5 V 3

100

A

0

FV

-110

5

5

10-2

-3

5

10

0.05

210-1-2-3-4-5 1010 1010 10tp

10 10s100

0.1

0.005

0.020.01

D =

TtAIF D = IP

T

F

PtOHF05438

0.20.51

0.033

0.2

0.4

0.6

0.8

1.0

1.2

tp

0

TtA

IF D = IP

T

F

PtOHF05708

-510 -3-410 10 -1-210 10 1010 10 s 210

0.51

0.20.1

0.01

0.050.02

=0.005D

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.1

Page 5: High Power Infrared Emitter (850 nm) Version 1.6 … · High Power Infrared Emitter (850 nm) Version 1.6 ... After this bag is opened, devices that will be subjected to infraredreflow,

Version 1.6 SFH 4250

2016-11-24 5

Radiation Characteristics 3) page 12

Irel = f(ϕ), TA= 25°C

Package Outline

Dimensions in mm (inch).

0

0.2

0.4

1.0

0.8

0.6

ϕ

1.0 0.8 0.6 0.4

0˚10˚20˚40˚ 30˚ OHL01660

50˚

60˚

70˚

80˚

90˚

100˚0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚

Page 6: High Power Infrared Emitter (850 nm) Version 1.6 … · High Power Infrared Emitter (850 nm) Version 1.6 ... After this bag is opened, devices that will be subjected to infraredreflow,

2016-11-24 6

Version 1.6 SFH 4250

Pinning

Pin Description

1 Cathode

2 Anode

3 Anode

4 Anode

Package

Power TOPLED

Approximate Weight:

31 mg

Recommended Solder Pad

Dimensions in mm.

Page 7: High Power Infrared Emitter (850 nm) Version 1.6 … · High Power Infrared Emitter (850 nm) Version 1.6 ... After this bag is opened, devices that will be subjected to infraredreflow,

Version 1.6 SFH 4250

2016-11-24 7

Reflow Soldering Profile

Product complies to MSL Level 2 acc. to JEDEC J-STD-020E

00

s

OHA04525

50

100

150

200

250

300

50 100 150 200 250 300

t

T

˚C

St

t

Pt

Tp240 ˚C

217 ˚C

245 ˚C

25 ˚C

L

OHA04612

Profile Feature

Profil-Charakteristik

Ramp-up rate to preheat*)

25 °C to 150 °C2 3 K/s

Time tS TSmin to TSmax

tS

tL

tP

TL

TP

100 12060

10 20 30

80 100

217

2 3

245 260

3 6

Time25 °C to TP

Time within 5 °C of the specified peaktemperature TP - 5 K

Ramp-down rate*TP to 100 °C

All temperatures refer to the center of the package, measured on the top of the component

* slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range

Ramp-up rate to peak*)

TSmax to TP

Liquidus temperature

Peak temperature

Time above liquidus temperature

Symbol

Symbol

Unit

Einheit

Pb-Free (SnAgCu) Assembly

Minimum MaximumRecommendation

K/s

K/s

s

s

s

s

°C

°C

480

Page 8: High Power Infrared Emitter (850 nm) Version 1.6 … · High Power Infrared Emitter (850 nm) Version 1.6 ... After this bag is opened, devices that will be subjected to infraredreflow,

2016-11-24 8

Version 1.6 SFH 4250

Taping

Dimensions in mm (inch).

Tape and Reel

8 mm tape with 2000 pcs. on ∅ 180 mm reel, 8000 pcs. on ∅ 330 mm reel

D0

2P

P0

1P

WFE

Direction of unreeling

N

W1

2W

A

OHAY0324

Label

Leader:Trailer:

13.0

Direction of unreeling

±0.2

5

min. 160 mm *

min. 400 mm *

*) Dimensions acc. to IEC 60286-3; EIA 481-D

Page 9: High Power Infrared Emitter (850 nm) Version 1.6 … · High Power Infrared Emitter (850 nm) Version 1.6 ... After this bag is opened, devices that will be subjected to infraredreflow,

Version 1.6 SFH 4250

2016-11-24 9

Tape dimensions [mm]Tape dimensions in mm

Reel dimensions [mm]Reel dimensions in mm

Reel dimensions in mm

Barcode-Product-Label (BPL)

Dry Packing Process and Materials

Note:

Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card.

Regarding dry pack you will find further information in the internet. Here you will also find the normative

W P0 P1 P2 D0 E F

8 + 0.3 / -0.1 4 ± 0.1 2 ± 0.05

or

4 ± 0.1

2 ± 0.05 1.5 ± 0.1 1.75 ± 0.1 3.5 ± 0.05

A W Nmin W1 W2max

180 8 60 8.4 + 2 14.4

A W Nmin W1 W2max

330 8 60 8.4 + 2 14.4

OHA04563

(G) GROUP:

1234567890(1T) LOT NO: (9D) D/C: 1234

(X) PROD NO: 123456789

(6P) BATCH NO: 1234567890

LX XXXX

RoHS Compliant

BIN1: XX-XX-X-XXX-X

MLX

Temp STXXX °C X

Pack: RXX

DEMY XXX

X_X123_1234.1234 X

9999(Q)QTY:

SemiconductorsOSRAM Opto

XX-XX-X-X

EXAMPLE

X_X123_1234.1234 XX_X123_1234.1234 X

EXAMPLE

EXAMPLE

EXAMPLE

XXXXXX

X_X123_1234.1234 XX_X123_1234.1234 X

XX-XX-X-XXX-XX-X-X

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

XXXXXX

X_X123_1234.1234 XX_X123_1234.1234 X

XX-XX-X-XXX-XX-X-X

EXAMPLE

Pack: RXX

XXX

X_X123_1234.1234 XX_X123_1234.1234 X

XX-XX-X-X

EXAMPLE

Pack: RXXPack: RXX

DEMY DEMY

EXAMPLE

1234

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

(9D) D/C:(9D) D/C: 12341234

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

12341234

EXAMPLE

Pack: RXXPack: RXX

DEMY

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

(9D) D/C:(9D) D/C:

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

(9D) D/C: 1234

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

(9D) D/C:

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

12345678901234567890EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

(6P) BATCH NO:(6P) BATCH NO: 12345678901234567890

SemiconductorsSemiconductors

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

(6P) BATCH NO:(6P) BATCH NO: 12345678901234567890EXAMPLE

SemiconductorsSemiconductorsOSRAM OptoOSRAM Opto

EXAMPLE

EXAMPLE

1234567890

X_X123_1234.1234 X

Pack: RXX

DEMY

X_X123_1234.1234 X

(9D) D/C: 1234(9D) D/C:

1234567890(6P) BATCH NO: 1234567890

OSRAM Opto

XXX

X_X123_1234.1234 X

XX-XX-X-X

Pack: RXX

DEMY

Semiconductors

OHA00539

OSRAM

Moisture-sensitive label or print

Barcode label

Desiccant

Humidity indicator

Barcode label

OSRAM

Please check the HIC immidiately afterbag opening.

Discard if circles overrun.Avoid metal contact.

WET

Do not eat.

Comparatorcheck dot

parts still adequately dry.

examine units, if necessary

examine units, if necessary

5%

15%

10%bake units

bake units

If wet,

change desiccant

If wet,

Humidity IndicatorMIL-I-8835

If wet,

Mois

ture

Level 3

Flo

or tim

e 168 H

ours

Mois

ture

Level 6

Flo

or tim

e 6

Hours

a) H

umid

ity In

dicato

r C

ard is

> 1

0% w

hen read a

t 23 ˚

C ±

5 ˚C

, or

reflo

w, v

apor-phase r

eflow

, or equiv

alent p

rocessin

g (peak p

ackage

2. Afte

r th

is b

ag is o

pened, devic

es that w

ill b

e subje

cted to

infrare

d

1. Shelf

life in

seale

d bag: 2

4 month

s at <

40 ˚

C a

nd < 9

0% rela

tive h

umid

ity (R

H).

Mois

ture

Level 5

a

at facto

ry c

onditions o

f

(if b

lank, s

eal date

is id

entical w

ith d

ate c

ode).

a) M

ounted w

ithin

b) S

tore

d at

body tem

p.

3. Devic

es require

bakin

g, befo

re m

ounting, i

f:

Bag s

eal date

Mois

ture

Level 1

Mois

ture

Level 2

Mois

ture

Level 2

a4. If b

aking is

require

d,

b) 2a o

r 2b is

not m

et.

Date

and ti

me o

pened:

refe

rence IP

C/J

ED

EC

J-S

TD

-033 fo

r bake p

rocedure

.

Flo

or tim

e see b

elow

If bla

nk, see b

ar code la

bel

Flo

or tim

e > 1

Year

Flo

or tim

e 1

Year

Flo

or tim

e 4

Weeks10%

RH

.

_<

Mois

ture

Level 4

Mois

ture

Level 5

˚C).

OPTO

SEM

ICO

NDUCTORS

MO

ISTURE S

ENSITIV

E

This b

ag conta

ins

CAUTION

Flo

or tim

e 72 H

ours

Flo

or tim

e 48 H

ours

Flo

or tim

e 24 H

ours

30 ˚C

/60%

RH

.

_<

LE

VE

L

If bla

nk, see

bar code la

bel

Page 10: High Power Infrared Emitter (850 nm) Version 1.6 … · High Power Infrared Emitter (850 nm) Version 1.6 ... After this bag is opened, devices that will be subjected to infraredreflow,

2016-11-24 10

Version 1.6 SFH 4250

references like JEDEC.

Transportation Packing and Materials

Dimensions of transportation box in mm

Width Length Height

200 ± 5

352 ± 5

195 ± 5

352 ± 5

30 ± 5

33 ± 5

OHA02044

PACKVAR:

R077Additional TEXT

P-1+Q-1

Multi TOPLED

Muste

r

OSRAM Opto

Semiconductors

(6P) BATCH NO:

(X) PROD NO:

10

(9D) D/C:

11(1T) LOT NO:

210021998

123GH1234

024 5

(Q)QTY: 2000

0144

(G) GROUP:

260 C RT240 C R

3

220 C R

MLBin3:Bin2: Q

-1-20

Bin1: P-1-20

LSY T6762

2a

Temp ST

R18DEMY

PACKVAR:

R077Additional TEXT

P-1+Q-1

Multi TOPLED

Muste

r

OSRAM Opto

Semiconductors

(6P) BATCH NO:

(X) PROD NO:

10

(9D) D/C:

11(1T) LOT NO:

210021998

123GH1234

024 5

(Q)QTY: 2000

0144

(G) GROUP:

260 C RT240 C R

3

220 C R

MLBin3:Bin2: Q

-1-20

Bin1: P-1-20

LSY T6762

2a

Temp ST

R18DEMY

OSRAM

Packing

Sealing label

Barcode label

Mois

ture

Level 3

Flo

or tim

e 168 H

ours

Mois

ture

Level 6

Flo

or tim

e 6

Hours

a) H

umid

ity In

dicato

r C

ard is

> 1

0% w

hen read a

t 23 ˚

C ±

5 ˚C

, or

reflo

w, v

apor-phase r

eflow

, or equiv

alent p

rocessin

g (peak p

ackage

2. Afte

r th

is b

ag is o

pened, devic

es that w

ill b

e subje

cted to

infrare

d

1. Shelf

life in

seale

d bag: 2

4 month

s at <

40 ˚

C a

nd < 9

0% rela

tive h

umid

ity (R

H).

Mois

ture

Level 5

a

at facto

ry c

onditions o

f

(if b

lank, s

eal date

is id

entical w

ith d

ate c

ode).

a) M

ounted w

ithin

b) S

tore

d at

body tem

p.

3. Devic

es require

bakin

g, befo

re m

ounting, i

f:

Bag s

eal date

Mois

ture

Level 1

Mois

ture

Level 2

Mois

ture

Level 2

a4. If b

aking is

require

d,

b) 2a o

r 2b is

not m

et.

Date

and ti

me o

pened:

refe

rence IP

C/J

ED

EC

J-S

TD

-033 fo

r bake p

rocedure

.

Flo

or tim

e see b

elow

If bla

nk, see b

ar code la

bel

Flo

or tim

e > 1

Year

Flo

or tim

e 1

Year

Flo

or tim

e 4

Weeks10%

RH

.

_<

Mois

ture

Level 4

Mois

ture

Level 5

˚C).

OPTO

SEM

ICO

NDUCTORS

MO

ISTURE S

ENSITIV

E

This b

ag conta

ins

CAUTION

Flo

or tim

e 72 H

ours

Flo

or tim

e 48 H

ours

Flo

or tim

e 24 H

ours

30 ˚C

/60%

RH

.

_<

LE

VE

L

If bla

nk, see

bar code la

bel

Barcode label

Page 11: High Power Infrared Emitter (850 nm) Version 1.6 … · High Power Infrared Emitter (850 nm) Version 1.6 ... After this bag is opened, devices that will be subjected to infraredreflow,

Version 1.6 SFH 4250

2016-11-24 11

Disclaimer

Language english will prevail in case of any discrepancies or deviations between the two language wordings.

Attention please!

The information describes the type of component and shall not be considered as assured characteristics.

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substances.

For information on the types in question please contact our Sales Organization.

If printed or downloaded, please find the latest version in the Internet.

Packing

Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.

By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing

material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any

costs incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose!

Critical components* may only be used in life-support devices** or systems with the express written approval of

OSRAM OS.

*) A critical component is a component used in a life-support device or system whose failure can reasonably be

expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that

device or system.

**) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or

maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be

endangered.

Page 12: High Power Infrared Emitter (850 nm) Version 1.6 … · High Power Infrared Emitter (850 nm) Version 1.6 ... After this bag is opened, devices that will be subjected to infraredreflow,

2016-11-24 12

Version 1.6 SFH 4250

Glossary

1) Thermal resistance: junction -ambient, mounted on PC-board (FR4), padsize 16 mm2 each

2) Thermal resistance: junction - soldering point, of the device only, mounted on an ideal heatsink (e.g. metal block)

3) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or

calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily

correspond to the actual parameters of each single product, which could differ from the typical data and calculated

correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data

will be changed without any further notice.

Page 13: High Power Infrared Emitter (850 nm) Version 1.6 … · High Power Infrared Emitter (850 nm) Version 1.6 ... After this bag is opened, devices that will be subjected to infraredreflow,

2016-11-24 13

Version 1.6 SFH 4250

Published by OSRAM Opto Semiconductors GmbH

Leibnizstraße 4, D-93055 Regensburg

www.osram-os.com © All Rights Reserved.