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High Speed Digital Signal Path Design for a 40 Gb /s Optical Receiver. European ADS User’s Group Meeting Boeblingen , May 14-15 2009. Contents. Trends in Fiber Optics Optical Receiver Modul with 4x 10Gb/s High Speed Signal Path Transimpedance Amplifier (TIA) Output stage IC Bondwire - PowerPoint PPT Presentation
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www.ix-cad.de
-cadIX
Karsten Drögemü[email protected]
ixpanding bandwidth
European ADS User’s Group MeetingBoeblingen, May 14-15 2009
High Speed Digital Signal Path Design for a 40 Gb/s Optical Receiver
1KD 04/22/2023
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Contents
2
Trends in Fiber Optics Optical Receiver Modul with 4x 10Gb/s High Speed Signal Path
• Transimpedance Amplifier (TIA) Output stage• IC Bondwire• Package Feedthrough• Flex Foil Circuit• Test board interconnection & Test Board
RF Path in Frequency Domain RF Path in Time Domain Measurement Data: Eye diagram & TDR Conclusion
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Trends in Fiber Optics
Standardization Activities
IEEE HSSG 10G 40 G 100 G
QSFP – MSA 4x 5 G; 4 x 8 G; 4 x10 G
USB 3.0 5G
XMD – MSA ROSA/TOSA up to 10 G
XLMD –MS ROSA/TOSA up to 40 G Active Optical Cable 12 x 10G
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4
Trends in Fiber Optics
100 G and 40 G Form Factors for Transceivers
4x10Gb/s
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5
Optical Receiver Module with 4x 10Gb/s
Fiber
Flex FoilPackage
www.cubeoptics.com
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6
High Speed Signal Path
RX ModuleBottom side up
Flex foil
Test BoardSMD Connector
Flex foil – Test Board transition
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7
High Speed Signal Path
Signal path divided in section to create models
50O
hm50
Ohm
Testboard
Flex toTest Boardtransition
Flex foilcircuit
Package toFlex Foiltransition
Bond wire
V0 Vpkg Vflex Vtb Vout
TIA outputstage
Vtia Vbw
RF in RF out
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8
TIA Output Stage: Linear Circuit Model
Vcc
Vcc
V_DCSRC3Vdc=3.3 V
PortP1Num=1
PortP2Num=2
Term_DiffTerm_Diff1Load=100 Ohm
Tx_DiffTx_Diff1
ExcludeLoad=yesMode=Maximal Length LFSRRiseFallTime=35 psecVlow=-140 VVhigh=140 mVBitRate=10 Gbps
Tx
ChannelSimChannelSim1
EnforcePassivity=yesToleranceMode=AutoNumberOfBits=1000
ChannelSim
EyeDiff_ProbeEyeDiff_Probe1
V+
V-
ONET8501T_transistorQ1
ONET8501T_transistorQ2
RR1R=50 Ohm
I_DCSRC1Idc=3 mA
I_DCSRC2Idc=3 mA
RR3R=22 Ohm
RR2R=50 Ohm
linear transistor model
Channelsimulationsource
TIA Chip
CML output stage
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9
Bond Wire Model: 3D EM Simulation Model
TIA
Bond wire
Glass
Metal pin(differential feedthrough)
S-Parameter extractedfrom EM simulation 3D Model
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10
Package Feedthrough: 3D EM Simulation
S-Parameter extractedfrom EM simulation
Metal base
Flex foil circuit
Metal Pins
Glass
Mag (SDD11)
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11
Flex Foil Circuit: 2.5D EM Simulation Model
Flex foil circuit layout in ADS one RF path copied and simulated in Momentum
Polyimide: 50um, Cu T=36um, 50um Cover layerCoupled microstrip: w=70um, s=250um, Zdiff=100
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Test Board Interconnection
Layout in Allegro PCB
RF critical section copied to Momentum (use Utility)
Momentum 3D viewTest board
Flex circuit on top
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13
Test Board: ADS Line Models
differential lineMicrostrip lineline splitter(*)
(*) Line splitter modelcreated with Momentum
Vtb1
Vtb2
Vflex1Vflex2
TOflex_hfss40G! Port[1] = WavePort1:T1 flex side! Port[2] = WavePort1:T2 flex side! Port[3] = WavePort2:T1 glass side! Port[4] = WavePort2:T2 glass side
TIA9_TO40G! Terminal data exported! Port[1] = LumpPort4:T1 IC side to WP1 T1! Port[2] = LumpPort9:T1 IC side to WP1 T2! Port[3] = WavePort1:T1 glass side! Port[4] = WavePort1:T2 glass side
S4PSNP4File="Mom_RFflexRFthickHCMRloss60G_mom_a.ds"
4
1 2
3 Ref
MSUBRO4350
Rough=1.4 umTanD=0.005T=43 umHu=1.0e+033 mmCond=5.7E+7Mur=1Er=3.5H=0.17 mm
MSub
MLINTL1
L=24 mmW=0.35 mmSubst="RO4350"
MLINTL2
L=24 mmW=0.35 mmSubst="RO4350"
Gabel_CMSLtoSE_MSLX2
2
4
1
3
MCLINCLin3
L=63 mmS=0.4 mmW=0.32 mmSubst="RO4350"
S4PSNP5File="ROSA410testbrd_1V0_final_start3small_MWthickHCMR40Gmom_a.ds"
4
1 2
3 Ref
TermTerm2
Z=50 OhmNum=2
TermTerm4
Z=50 OhmNum=4
TermTerm1
Z=50 OhmNum=1
S4PSNP3File="TOflex_hfss40G.s4p"
4
12
3Ref
TermTerm3
Z=50 OhmNum=3
S4PSNP2File="TIA9_TO40G.s4p"
4
1 2
3 Ref
S_ParamSP1
Step=0.1 GHzStop=40.0 GHzStart=1.0 GHz
S-PARAMETERS
PCB cut view
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14
RF Path in Frequency Domain
TOflex_hfss40G! Port[1] = WavePort1:T1 flex side! Port[2] = WavePort1:T2 flex side! Port[3] = WavePort2:T1 glass side! Port[4] = WavePort2:T2 glass side
TIA9_TO40G! Terminal data exported! Port[1] = LumpPort4:T1 IC side to WP1 T1! Port[2] = LumpPort9:T1 IC side to WP1 T2! Port[3] = WavePort1:T1 glass side! Port[4] = WavePort1:T2 glass side
Vflex1
Vflex2
Vtb1
Vtb2MLINTL1
L=24 mmW=0.35 mmSubst="RO4350"
MLINTL2
L=24 mmW=0.35 mmSubst="RO4350"
Gabel_CMSLtoSE_MSLX2
2
4
1
3
MCLINCLin3
L=63 mmS=0.4 mmW=0.32 mmSubst="RO4350"
MSUBRO4350
Rough=1.4 umTanD=0.005T=43 umHu=1.0e+033 mmCond=5.7E+7Mur=1Er=3.5H=0.17 mm
MSub
S4PSNP5File="ROSA410testbrd_1V0_final_start3small_MWthickHCMR40Gmom_a.ds"
4
1 2
3 Ref
S4PSNP4File="Mom_RFflexRFthickHCMRlossNi40G_mom_a.ds"
4
1 2
3 Ref
S4PSNP3File="TOflex_hfss40G.s4p"
4
12
3Ref
TermTerm3
Z=50 OhmNum=3
TermTerm4
Z=50 OhmNum=4
S4PSNP2File="TIA9_TO40G.s4p"
4
1 2
3 Ref
TermTerm1
Z=50 OhmNum=1
TermTerm2
Z=50 OhmNum=2
S_ParamSP1
Step=0.1 GHzStop=40.0 GHzStart=1.0 GHz
S-PARAMETERS
Simulation set up in ADS
TIA Output stage omitted
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RF Path in Frequency Domain
5 10 15 20 25 30 350 40
-20
-15
-10
-5
-25
0
freq, GHz
dB(S
DD21
)
Readout
m2
db(S
DD12
)m2freq=dB(SDD21)=-5.300
10.00GHz
Vout
5 10 15 20 25 30 350 40
-16
-14
-12
-10
-8
-6
-4
-2
-18
0
freq, GHz
dB(S
DD21
)
Readout
m2
db(S
DD12
)
m2freq=dB(SDD21)=-3.491
10.00GHz
Vtb
5 10 15 20 25 30 350 40
-10
-8
-6
-4
-2
-12
0
freq, GHz
dB(S
DD21
)
Readout
m2
db(S
DD12
)
m2freq=dB(SDD21)=-2.219
10.00GHz
Vflex
5 10 15 20 25 30 350 40
-8
-7
-6
-5
-4
-3
-2
-1
-9
0
freq, GHz
dB(S
DD21
)
Readout
m2
db(S
DD12
)
m2freq=dB(SDD21)=-1.130
10.00GHz
Vpkg
5 10 15 20 25 30 350 40
-5
-4
-3
-2
-1
-6
0
freq, GHz
dB(S
DD21
)
Readout
m2
db(S
DD12
)
m2freq=dB(SDD21)=-1.104
10.00GHz
Vbw
50O
hm50
Ohm
Testboard
Flex toTest Boardtransition
Flex foilcircuit
Package toFlex Foiltransition
Bond wire
RF in
V0 Vpkg Vflex Vtb Vout
TIA outputstage
Vtia Vbw
RF out
each section ideal terminated
+1.2dBloss
+1.8dBloss
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RF Path in Time Domain
Vtb1
Vtb2
Vflex1
Vflex2
TOflex_hfss40G! Port[1] = WavePort1:T1 flex side! Port[2] = WavePort1:T2 flex side! Port[3] = WavePort2:T1 glass side! Port[4] = WavePort2:T2 glass side
TIA9_TO40G! Terminal data exported! Port[1] = LumpPort4:T1 IC side to WP1 T1! Port[2] = LumpPort9:T1 IC side to WP1 T2! Port[3] = WavePort1:T1 glass side! Port[4] = WavePort1:T2 glass side
MCLINCLin3
L=63 mmS=0.4 mmW=0.32 mmSubst="RO4350"
Gabel_CMSLtoSE_MSLX2
2
4
1
3
MLINTL2
L=24 mmW=0.35 mmSubst="RO4350"
MLINTL1
L=24 mmW=0.35 mmSubst="RO4350"
S4PSNP5File="ROSA410testbrd_1V0_final_start3small_MWthickHCMR40Gmom_a.ds"
4
1 2
3 Ref
S4PSNP4File="Mom_RFflexRFthickHCMRlossNi40G_mom_a.ds"
4
1 2
3 Ref
S4PSNP3File="TOflex_hfss40G.s4p"
4
12
3Ref
S4PSNP2File="TIA9_TO40G.s4p"
4
1 2
3 Ref
ChannelSimChannelSim2
EnforcePassivity=yesToleranceMode=AutoNumberOfBits=500
ChannelSim
EyeDiff_ProbeEyeDiff_Probe1
V+
V-
Tx_DiffTx_Diff2
ExcludeLoad=yesMode=Maximal Length LFSRRiseFallTime=35 psecVlow=-140 mVVhigh=140 mVBitRate=10 Gbps
Tx
ONET8501T_outputstageX3
2
4
1
3
Term_DiffTerm_Diff1Load=100 Ohm
MSUBRO4350
Rough=1.4 umTanD=0.005T=43 umHu=1.0e+033 mmCond=5.7E+7Mur=1Er=3.5H=0.17 mm
MSub
Models defined in frequency domainand simulated in time domain using convolution
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17
RF Path in Time Domain
50O
hm50
Ohm
Testboard
Flex toTest Boardtransition
Flex foilcircuit
Package toFlex Foiltransition
Bond wire
RF in
V0 Vpkg Vflex Vtb Vout
TIA outputstage
Vtia Vbw
RF out
20 40 60 80 100 120 140 160 1800 200
-0.15
-0.10
-0.05
0.00
0.05
0.10
0.15
-0.20
0.20
time, psec
Dens
ity
20 40 60 80 100 120 140 160 1800 200
-0.15
-0.10
-0.05
0.00
0.05
0.10
0.15
-0.20
0.20
time, psec
Dens
ity
20 40 60 80 100 120 140 160 1800 200
-0.15
-0.10
-0.05
0.00
0.05
0.10
0.15
-0.20
0.20
time, psec
Dens
ity
20 40 60 80 100 120 140 160 1800 200
-0.15
-0.10
-0.05
0.00
0.05
0.10
0.15
-0.20
0.20
time, psec
Dens
ity
20 40 60 80 100 120 140 160 1800 200
-0.15
-0.10
-0.05
0.00
0.05
0.10
0.15
-0.20
0.20
time, psec
Dens
ity
20 40 60 80 100 120 140 160 1800 200
-0.15
-0.10
-0.05
0.00
0.05
0.10
0.15
-0.20
0.20
time, psec
Dens
ity
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18
Eye Diagram Measurement Setup
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Measurement Data: Eye Diagram
20 40 60 80 100 120 140 160 1800 200
-0.15
-0.10
-0.05
0.00
0.05
0.10
0.15
-0.20
0.20
time, psec
Dens
ity
20 40 60 80 100 120 140 160 1800 200
-0.15
-0.10
-0.05
0.00
0.05
0.10
0.15
-0.20
0.20
time, psec
Dens
ity
Flex line with Cu
Flex line with Ni/Au plating
Flex line has Ni/Au platingNi is a ferromagnetic conductor smaller skin depth = higher loss
receive opt. Power -12dBmsensitivity -18dBm (BER=10E-12)
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20
Measurements Data: TDR
30
40
50
60
70
0 20 40 60 80 100L(Er=3.38)[mm]
Z[oh
m]
J5J7
SMA
Test Board
Transition to Flex
Flex ctr
AC Cap.
V1
V2
! Terminal data exported! Port[1] = WavePort1:T1! Port[2] = WavePort1:T2! Port[3] = WavePort2:T1! Port[4] = WavePort2:T2
Vtb1
Vtb2
SIMULATION OF THE TDR RESPONSE OF THE DUT-BOARD
MSUBRO4350
Rough=1.4 umTanD=0.005T=43 umHu=1.0e+033 mmCond=5.7E+7Mur=1Er=3.5H=0.17 mm
MSub
TranTran1
LimitStepForTL=yesMaxTimeStep=Trise/6StopTime=1.4 nsecStartTime=0.0 nsec
TRANSIENT
RR1R=50 Ohm
VtStepSRC1
Rise=TriseVhigh=VscrVlow=0 Vt
VtStepSRC2
Rise=TriseVhigh=VscrVlow=0t
RR2R=50 Ohm
VARVAR1
Vscr=1 VTrise=20 psec
EqnVar
Gabel_CMSLtoSE_MSLX2
2
4
1
3
S4PSNP4File="FlexfoilcoverL18mmAuNi.s4p"
4
12
3Ref
MCLINCLin3
L=63 mmS=0.4 mmW=0.32 mmSubst="RO4350"MLIN
TL2
L=24 mmW=0.35 mmSubst="RO4350"
MLINTL1
L=24 mmW=0.35 mmSubst="RO4350"
S4PSNP5File="ROSA410testbrd_1V0_final_start3small_MWthickHCMR40Gmom_a.ds"
4
12
3Ref
Z0239.442
Z0148.973
0.2 0.4 0.6 0.8 1.0 1.20.0 1.4
0.420.440.460.480.500.520.540.560.58
0.40
0.60
time, nsec
V1, V
541.0p494.8m
m1
1.048n440.9m
m2
-V2
m1time=V1=494.8mV
541.0psec
m2time=V1=440.9mV
1.048nsec
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Conclusion
21
First samples: full functional, acceptable sensitivity Bond wire interconnection & package ok Issues identified by measurements and simulations:
- Test board to flex circuit transition too much reflection- Flex circuit loss to high- Test board traces too long
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22
Results after Redesign
Test board to flex circuit transition improved (new concept)Flex circuit loss improved (no cover layer)Test board traces shorted (approx. half length)
sensitivity < -19.0dBm @ BER = 1E-12 (1 to 1.5dB improvement)
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23
Product Design Methodology
Predict performance early in the design cycle by creating models for each component, critical net and entire system and by performing local and system simulation.
Use measurements throughout the design cycle to reduce risk and increase confidence to the quality of predictions.
Eric Bogatin