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Usage examples: Welding machine, UPS, power conditioner, air conditioner,PFC circuit for various switching power supplies, inverter circuit, etc.
Package: TO-247, TO-247-4
High Speed Discrete IGBT
SeriesHigh speed W
Saving energy is a priority in new industrial and communication devices, as energy needs grow worldwide. Moreover, power supplies for these devices are becoming smaller in answer to space-saving efforts and device downsizing. To meet these needs, Fuji Electric developed a high speed discrete IGBT “High speed W series.”
・High speed switching characteristics (40% reduction in turn-off loss)*1
・4-pin package with an additional sub-emitter terminal (TO-247-4) is added to lineup
・ Tjmax=175°C guaranteed
MTET0-3080-EN
Safety Precautions*Before using this product, read the "Instruction Manual" and "Specifications" carefully, and consult with the retailer from which you purchased this product as necessary to use this product correctly.*The product must be handled by a technician with the appropriate skills.
• Fuji Electric Hong Kong Co., Ltd.• Fuji Electric Taiwan Co., Ltd.• Fuji Electric Asia Pacific Pte. Ltd.• Fuji Electric Corp. of America• Fuji Electric Europe GmbH
Suites 1911-13, 19/F., Tower 6, The Gateway, Harbour City, Tsim Sha Tsui, Kowloon, Hong Kong10F. No.168, Song Jiang Road, Taipei, Taiwan151 Lorong Chuan, #2-01A, New Tech Park, SINGAPORE 55674150 Northfield Avenue Edison, NJ 08837, USAGoethering 58, 63067 Offenbach, am Main, F.R. GERMANY
Tel: +852-2664-8699Tel: +886-2-2515-1850Tel: +65-6533-0014Tel: +1-732-560-9410Tel: +49-69-6690290
URL http: //www.fujielectric.com/products/semiconductor/Gate City Ohsaki, East Tower, 1-11-2, Osaki, Shinagawa-ku, Tokyo 141-0032, Japan Tel:+81-3-5435-7156
Product Line-up Meaning of Device Type
1. High Speed Switching Characteristics (40% Reduction in Turn-off Loss)*1
2. 4-pin package with an additional sub-emitter terminal (TO-247-4) is added to lineup
Improving VCE(sat)-Eoff trade-off
40-50% reduction in switching loss compared to High-Speed V series
*1 Comparison to the conventional products (High-Speed V series)
VCE(V)
Device Type
Without Diode
650
1200
IC(A)
40
50
50
60
75
75
25
40
40
VCE(sat)(V)
1.8
1.8
1.8
1.8
1.8
1.8
2.0
2.0
2.0
Eon(mJ)
0.29
0.42
0.60
0.95
0.90
2.80
Eoff(mJ)
0.29
0.46
0.67
1.20
1.30
1.60
QG(nC)
180
215
250
300
300
80
120
Reduction in the inductance of gate-emitter loop by adding a sub-emitter terminal
17% Reduction in turn-off loss and 56% reduction in turn-on loss compared to TO-247 package (3-pin)
120
TO-247
TO-247
TO-247-4
TO-247
TO-247
TO-247-4
TO-247
TO-247
TO-247-4
FGW40N65W
FGW50N65W
FGW60N65W
FGW75N65W
FGW25N120W
FGW40N120W
FG W 40 N 120 W D
FGW40N65WD
FGW50N65WD
FGZ50N65WD
FGW60N65WD
FGW25N120WD
FGW40N120WD
FGW40N65WE
FGW50N65WE
FGZ50N65WE
FGW60N65WE
FGW75N65WE
FGZ75N65WE
FGW25N120WE
FGW40N120WE
FGZ40N120WEDiscrete IGBT
Package W: TO-247 Z : TO-247-4
Series W H V RB
: High speed W series: High speed V series : Standard V series: RB-IGBT
Diode type C, E D Blank
: With Diode (IF=IC): With Diode (IF=IC/2): Without Diode
Polarity N: N-channel
IC [A] @ 100°C
VCE: VCE × 0.1
0
0.25
0.5
0.75
1
1.25
1.5
1.75
0 10 20 30 40 50
Eof
f [m
J]
Eof
f [m
J]
IC [A]
Condition: Eoff VCC=400V, IC=25A, VGE=+15/-0V, RG=10Ω, Tj=125°C
IC-Eoff Characteristics Comparison
0
0.3
0.6
0.9
1.2
1.5
1 1.2 1.4 1.6 1.8 2VCE(sat) [V]
17% reduction @IC=75A56% reduction @IC=75A
VCE(sat)-Eoff Characteristics Comparison
Condition: Eoff VCC=400V, IC=25A, VGE=+15/-0V, RG=10Ω, Tj=125°C VCE(sat) IC=25A, VGE=15V, Tj=125°C
approximately 40%reduction @IC=25A
approximately 40%reduction @IC=25A
High-Speed Vseries
High-Speed Vseries
High-Speed Wseries
High-Speed Wseries
Turn-off Loss Comparison
Device: FGZ75N65WE, FGW75N65WECondition: VCC=400V, VGE=15V, RG=10Ω, Tj=125°C
Turn-on Loss ComparisonTO-247-4
Eof
f [m
J]
IC [A]
3pin3pin3pin
4pin4pin4pin
Eon
[mJ]
IC [A]
3pin3pin
4pin4pin
3pin
5.04.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.00 25 50 75 100
5.04.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.00 25 50 75 100
4pin
0.12 0.40 215
0.37 0.68
1.10 1.40
Controlloop
Powerloop
Circuit diagram
PWM
VG
VC
ERG
Gate
Sub-Emitter
Collector
Emitter
Emitter commonEmitter commoninductance inductance ≒ 0≒ 0
Emitter commoninductance ≒ 0
①Collector②Emitter③Sub-Emitter④Gate
①②③④
Package(IF=IC/2)
With Diode(IF=IC)
With Diode