Upload
others
View
3
Download
0
Embed Size (px)
Citation preview
High Voltage Power MOSFET& IGBTsEster Spitale
500V
1000V
1500V
800V
600V
200V
Normalised R DS(on) x Area
1 0.8 0.7 0.5 0.35
MD
mesh II
MD
mesh V
0.20.3
Super-junction
SuperM
ES
HN
K
PlanarS
uperME
SH
3 K3
SuperM
ES
H5
K5
ST HV Power MOSFETs: WW most complete offer
ST x 42 N 65 M5
CHANNEL POLARITY
BREAKDOWNVOLTAGE ÷ 10(with the exception of non 10 multiples)
SPECIAL FEATURES
M5 = MDmesh V >200VK3 = SuperMESH3 >300VK5 = SuperMESH5 >900V up to 1500V
PACKAGE
INDICATIVE CURRENT RANGE
C = TSSOP8 T = SOT23-6L H = H2PAK (2 to 7 leads)R = PPAKZ = P2PAKY= Max247 E = ISOTOPQ = TO-92FW = TO-3PF N = SOT-223L = PowerFLATU = IPAKI = I2PAKS = SO-8D = DPAK B = D2PAK P = TO-220/PentawattF = TO-220FPW = TO-247
T = Temperature SensingC = Current SensingZ = Clamped by Zener Diode 33-150VD = Fast Recovery Diode
N = N- Channel P = P-ChannelNS or PS = N-Ch or P-Ch plus Schottky Diode(electrically connected, monolithic included) DNS or DPS = N-Ch or P-Ch plus Schottky Diode (not electrically connected)N…N = Two different N-Channel diceN…P = Complementary pairDN or DP = Dual N-Ch or Dual P-Ch
ST Power MOSFET’s: Nomenclature
Insert All the “TM”
TECHNOLOGY
3
HV MOSFETs: 500V700V
Abs. Max Ratings STD planar SuperMESH 3
VDSS 400V,450V,500V, 600V400V,450V,525V, 600V,620V,650V
Diode dv/dt, di/dt 4.5V/ns, 400A/µs Up to 12 V/ns,400A/µs
Vth 3V÷4.5V 3V÷4.5V
BodySource
D.E.PP
Substrate
• Lower switching losses
• Higher dv/dt
• Higher ESD immunity
• Higher margin & robustness
HIGHER VDSS
BtB G-S Zeners
ImprovedDYNAMIC(Qg Ciss,
Crss)
REDUCED Trr
SuperMESH3
Ciss Coss Crss
SuperMESH3 712 112 8
Other Planar(similar Rdson)
920 114 21
Device: STx6N62K3Conditions : Vds=25V ; f=1MHz ; Vgs=0V ; Tj=25°C
Features• Lower Gate Charge
Benefits
• Lower Switching losses• Lower gate driving losses
SuperMESH3 Vs equivalent planar device
Same RDS(on) planar techno
SuperMESH3
SuperMESH3 – Improved dynamic
RDS(on) State-of-the-art
Best cost/performancecompromise
Why use an ST HV Power MOSFETs!!
MD
mesh II
MD
mesh V
>50 different 600/650V
RDS(on) specs
>50 different 600/650V
RDS(on) specs
from 1.8Ωdown to 17mΩ
consolidated technologiesconsolidated technologies
300Mpcs sold during
2011
extremely fast time-to-
market
high power in innovative packaging
high power in innovative packaging
among leaders in
FReDMOSFETs
among leaders in
FReDMOSFETs
RDS(on) State-of-the-art
Best cost/performancecompromise
ST HV Power MOSFETs: WW most complete offer
MD
mesh II
MD
mesh V
Multiple Drain mesh Evolution
DIFFERENCES
Key features
650 V lowest RDS(on) x area Higher breakdown voltage MDmesh™ V targeted for best
efficiency in the application
Main benefits
Higher energy saving Increased power density Increased safety margin
Key features
Low RDS(on) up to 40% less vs MDmesh I Small Qg,Ciss,Coss,Crss Very robust in dv/dt
0.36Ohm in DPAK 600V BEST in ClassBEST in ClassBEST in ClassBEST in Class
Main benefits
Extremely Low Power Losses Higher current at lower Vgs Avalanche Ruggedness
- Ron * Area- Concentration drain n
- Pitch
BVDss R DS(on) (max) [Ω] Sales Type Package Status
600V
1.800 STx3NM60N PowerFLAT3.3x3.3 Samples
0.900 STx7NM60N
DPAK / IPAK TO-220
Full Production
0.700 STx9NM60N
0.550STx10NM60N
0.360STx13NM60N
0.285 STx18NM60N
D²PAK TO-247TO-220/FP
0.220 STx22NM60N
0.190 STx24NM60N
0.165 STx26NM60N
0.105 STx34NM60N
0.070 STW48NM60N
TO-2470.060 STW56NM60NSamples
0.049 STW62NM60N
700V 0.350 STx13NM70N TO-220/FP Samples
MDmeshII: Product range extension
MDmeshV – New MDmeshV devices with improved Rds(on)
ST able to beat his record for
29mΩ650V
Best Competition: 650V 37mΩ
63mΩ650V
Best Competition: 650V 74mΩ
220mΩ650V
Best Competition: 650V 250mΩ
new concept devices:
MDmesh V: NEW product range
Sales Type R DS(on) Package SamplesMass
Production
650V
STY139N65M5 0.017 Max247 available May 2012
STW88N65M5 0.029TO-247
available production
STW69N65M5 0.045 available production
STx57N65M5 0.063
TO-220D²PAKI²PAK
available May 2012
STx45N65M5 0.078 available production
STx38N65M5 0.095 available production
STx34N65M5 0.110 May 2012 June 2012
STx31N65M5 0.148 available May 2012
STx18N65M5 0.240TO-220 TO-247DPAKIPAK
available June 2012
STx15N65M5 0.340 May 2012 May 2012
STx11N65M5 0.480 available production
Very HV: 900V1700V
20122010 2011
Eng. samples Maturity
SuperMESH 5 (Extension up to 2200V)
SuperMESH 5
2013
850V to 1200V
SuperMESH3950V to 1200V
1500V to 2200V
VHV MOSFETs: SuperMESH Roadmaps 14
Main benefitsHigher energy saving
Faster switching speed
Increased safety margin
TO-3PF for higher creepage
SuperMESH 5: Very HV SJ revolutionKey features
900V-1200V lowest RDS(on) x area Lowest FOM (RDS(on)*Qg) Designed for best efficiency
TO-3PF PowerFLAT 8x8
STL23N85K5 850V 0.275Ω PowerFLAT8x8
STD6N95K5 950V 1.250Ω DPAK
STP20N95K5 950V 0.330Ω TO-220
STFW6N120 1200V 0.690Ω TO-3PF
SuperMESH 5: best in class
STP21N90K5 BestCompetitor
0,299
0,34
RDS(on) MAX (Ω)
STP21N90K5 BestCompetitor
12
32
FoM = RDS(on) •Qg (Ω•nC)
900V TO-220 Benchmark
Targets* by Package/Voltage
* Simulated data
Samples In development
SuperMESH 5: best in class
RDS(on) MAX(mΩ) 950V 1050V 1200V
ISOTOP 48 70 100
Max247 85 120 175
TO-247 150 215 320
TO-3PF 175 250 370
TO-220 330 460 690
DPAK 1250 1700 2600
Production
VDS [V] RDS(on) (max) [Ω] P/N Package Samples Production
800
1.2 STx7N80K5 DPAK/IPAK
Q2 2012 Q3 20120.950 STx8N80K5 TO-220/TO-220FP/TO-247
0.375 STx12N80K5 TO-220/TO-220FP/TO-247
0.260 STx25N80K5 TO-220/TO-220FP/TO-247
850 0.275 STL23N85K5 PowerFLAT 8x8 HV Available Q2 2012
900 0.299 STx21N90K5 TO-220/TO-220FP/TO-247
Available Production950
1.250 STx6N95K3DPAK/IPAK/TO-220/TO-220FP/ TO-247
0.850 STx13N95K3 TO-220/TO-220FP/TO-247
0.360 STW25N95K3 TO-247
0.330 STx20N95K5 TO-220/TO-220FP/TO-247
1050 11 STx1N105K3 DPAK/TO-220 End Q2 2012
12002.400 STx6N120K3 TO-220/TO-3PF/TO-247
Q2 2012 Q3 20120.690 STx12N120K5 TO-220/TO-3PF/TO-247
SuperMESH 3 & 5 very HV seriesVery first available specs:
19
Main Benefits
VHV MOSFETs for 3-ph aux. SMPS
Specifically targeted for 3- Ф aux. SMPS PV inverter Welding Industrial Drvies
High reliability makes each solution stronger Wide choice of packages, including new fully
isolated TO-3PF, for easier solution
VDS
[V]P/N
RDS(on) (max)
[Ω]Packages
1500
STW9N150 2.5 TO-247
STx4N150 7 TO-247/ TO-3PF/TO-220/H2PAK
STx3N150 9 TO-247/ TO-3PF/TO-220/H2PAK
1700 STx3N170* 13 TO-247/ TO-3PF/TO-220
TO-3PFHigher creepage for electrical insulation
*’ By Q3’12
19
About Packages
20
PowerFLAT The smart solution to reduce space
Area
150 mm2 64 mm2
Space
Tickness
Weight
Simplicity
4.5mm
D²PAK
2.3mm
DPAK
1mm
PowerFLAT8x8
Thickness
PowerFLAT™ 3.3 x 3.3 HV INNOVATION IN PACKAGES
• Features
• Maximum thickness: 1 mm
• Unequalled low RDS(on) x area
• Clearance / Creepage distance: 1.4 mm
• Benefits
• Compactness
• Higher power density
This innovative HV, 1 mm high, surface-mount package, featured both with ST’s 600V MDmesh™ II and MDmesh™ V technologies, increases power density reducing thickness and weight
PowerFLAT product range
P/N VDS [V] RDS(on) (max) [Ω] Status
STL3NM60N 600 1.8 Samples Available
STL3N65M5 650 1.2 Q3’12 Samples
3x3 HV
P/N VDS [V] RDS(on) (max) [Ω] Status
STL3NK40 400 5 Full Production
STL7NM60N 600 0.9 Full Production
STL11N65M5 650 0.6 Q3’12 Samples
5x5 HV
PowerFLAT product range
P/N VDS [V] RDS(on) (max) [Ω] Status
STL5N52K3 525 1.5 Upon Request
STL4N62K3 620 1.95 Upon Request
STL12N65M5 650 0.530 Samples in Q3’12
STL15N65M5 650 0.374 Samples in Q3’12
STL18N65M5 650 0.240 Samples in Q3’12
STL20N65M5 650 0.200 Samples in Q3’12
STL7N80K5 800 1.2 Samples in Q3’12
STL8N80K5 800 0.99 Samples in Q4’12
5x6 HV
P/NVDS [V]
RDS(on) (max) [Ω] Status
STL18N55M5550
0.216Samples available by Q3 ‘12
STL36N55M5 0.090
STL23NM60ND
600
0.180
Full Production
STL26NM60N 0.185
STL24NM60N 0.215
STL18NM60N 0.309
STL13NM60N 0.385
STL57N65M5
650
0.069 Samples available by Q3 ‘12
STL31N65M5 0.162 Samples available by Q3 ‘12
STL22N65M5 0.200 Samples available by Q3 ‘12
STL18N55M5 0.216 Samples available by Q3 ‘12
STL19N65M5 0.240 Samples available by Q3 ‘12
STL17N65M50.374 Samples available by Q3 ‘12
STL23N85K5 850 0.275 Samples available
PowerFLAT 8x8 product range
26IGBT technologies
27
STG x 60 H 65 DD Fy
BREAKDOWN VOLTAGE ÷÷÷÷10
D = Very Fast RecoveryDR = Ultra Fast RecoveryDL = Low Forward Voltage
DIODE FEATURES
TECHNOLOGY
Fx = Trench Gate Field StopP = Planar PT
y
SPECIAL FEATURES
Exception (if any…)C = Current SensingT = Temperature SensingZ = Clamped by Zener DiodeL = Logic Level
PACKAGE
MAX CONTINUOUS CURRENT @ 100°°°°C
H = High speed (8 ÷ 30 kHz)V = Very High speed (20 ÷ 100 kHz)M = Low Loss ( up to 20 kHz)
TECHNOLOGY SERIES
B = D2PAK D = DPAKE = ISOTOP ®
F = TO-220FPFW = TO-3PF I = I2PAKL = PowerFLAT TM (8x8)P = TO-220U = IPAK (-S for short leads)W = TO-247WA = TO-247 LLWT = TO-3PY = Max247 ®
IGBT: Nomenclature for New Products
Trench Gate Field Stop IGBT:Suitable for high voltage and high current applicat ions
Low EOFF due to improved minority carrier recombination (Field Stop )
Positive Temperature coefficient in VCE(sat)resulting in a safer paralleling operation
Low VCE(sat) (Trench gate)
High switching robusteness (Large SOA)
Low RTH (Thin wafer thickness)
collector
emitter gate
Features Main Applications
PhotoVoltaic
Uninterruptable Power Supply
Welding
Power Factor Corrector
Hybrid Electric Veichles
Induction Heating
1200V IGBT TFS “High Frequency” series
IGBT in Trench Gate Field Stop Technology 1200V break down rated Final die thickness: 110µm Very low RTH
Positive derating of VCE(sat)
Tailored for High speed switching application
Preliminary Results (on packaged parts)
STGW25H120DF
Topology: Full BridgeMain Specs: POut=3kW, fSw=20kHz, DMax=90%, ÎOut≅20A, Tj=125ºC
Device (Trench FS) I C (nom) PCon (W) PSw (W) PTot (W) (*)
STGW25H120DF 25A @ 100°C 11.92 11.15 23.1
Competitor 1 25A @ 100°C 10.37 12.10 22.5
Competitor 2 25A @ 110°C 10.89 12.74 23.6
Competitor 3 25A @ 100°C 13.48 10.51 24.0
Simulated benchmark based on datasheet values
(*) switching-on power losses have been neglected for all the devices under benchmark, since they basically depend of co-packaged diode
Symbol CharacteristicTypical Value
Unit25°C 150°C
BVCES Collector to Emitter breakdown voltage 1200 V
VCESAT VGE= 15V, IC= 25A 2.1 2.3 V
EOFF VCC=600V, VGE=15÷0V, RGOFF=22Ω, IC=25A 0.75 1.63 mJ
MAT 20
Product Features:
Samples Available
650V IGBT TFS “High Frequency” series
IGBT in Trench Gate Field Stop Technology 650V break down rated Final die thickness: 80µm Very low RTH
Positive derating of VCE(sat)
Tailored for High speed switching application
Final Results (on packaged parts)
Symbol CharacteristicTypical Value
Unit25°C 150°C
BVCES Collector to Emitter breakdownvoltage
650 V
VCESAT VGE= 15V, IC=60A 1.9 2.1 V
EOFF VCC= 400V, VGE= 15V÷0, RG= 10Ω, IC= 60A
1.05 1.4 mJ
STGW60H65DF
Topology: Full Bridge
Main Specs: Pout=5kW, fsw=16kHz, DMax=90%, ÎOut≅30A, TJ=150ºC
Device (Trench FS) IC (nom)PCon(W)
PSw(W)
PTot (W)(*)
STGW60H65DF 60A @ 100°C 13.11 4.21 17.3
Competitor 1 50A @ 100°C 13.51 3.67 17.2
Competitor 2 58A @ 100°C 14.70 3.06 17.8
Competitor 3 60A @ 100°C 13.91 4.08 18.0
Simulated benchmark based on datasheet values
(*) switching-on power losses have been neglected for all the devices under benchmark,
since they basically depend of co-packaged diode
MAT 30
Product Features:
31
BVCES` ICN1) VCESAT
@ ICN
Short Circuit 2) Sales Type Main Applications Packages Eng.
SamplesProduction
600 V20 A 1.6 V 6 µs STGP20H60DF
UPS, PFC, motor control
TO-220, FP Available Production
30 A 1.9 V 6 µs STGP30H60DFUPS, PFC, motor control
TO-220, FP, TO-247 Available Production
650 V
60 A 1.9 V 6 µs STGW60H65DF Solar, UPS, PFC TO-247 Available Production
60 A 1.9 V 6 µs STGW60H65DRF Solar, UPS, PFC TO-247 Available Production
600V/650V Discrete IGBT Product PlanH series (8 ÷ 30 kHz)
2) Test condition VCC = 400V, VGE = 15V, TJstart = 25˚C1) continuous IC @ 100°C
TJMAX = 175˚C