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Highly Linear Power Amplifiers for Broadband Wireless Applications
Power Amplifiers for Wireless Communications Workshop
September 9, 2002
M. Siddiqui, M. Quijije, A. Lawrence, B. Pitman, R. Katz, P. Tran, S.
Din, L. Callejo, N. Yamamoto, K. Johnson, R Lai, R. Tsai and D. Streit
2
Applications Landscape
Higher data rates dictate highly linear transmit chainsMajor contributor to linearity and cost is the driver / power amplifier combination.
Higher data rates dictate highly linear transmit chainsMajor contributor to linearity and cost is the driver / power amplifier combination.
3
• 0.15 um T-gate process
• Breakdown > 8 Volts
• fT > 85 GHz at Vds > 4 volts
• Gm > 500 mS/mm
• Imax > 500 mA/mm
• 4mil substrate thickness
• Flight qualified, commercially
proven processGaAs substrate
undoped AlGaAs
undoped AlGaAs
n+-GaAs
undoped InGaAsSi plane doping
Source DrainGate
TRW Pseudomorphic HEMT Process
4
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
1.5 2 2.51000/T
MT
F
• Ea 1.6 eV, Sigma = 0.6• MTF 6X1010 hours at Tj=125oC
TRW 0.15m PHEMT Process Reliability
Typical benchmark,1X106 hrs at 125C
1
10
100
1000
10000
100000
-2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5
% Cumulative Failure
TT
F,
ho
urs
Ta=210C
Ta=265C
Ta=235C
Ta=250C
5
Summary of Circuit Performance
Part Name APH478 30 GHz
Cell
APH496 APH497 APH502 APH473 APH474
Freq
(GHz)
17-20 29-32 28-31 32-35 34-36 37-40 40-44
Gain (dB) 16 8 16 16 15 15 15
P1dB (dBm) 30.3 30.2 26.8 26.5 30.5 29.5 29.5
Density
@ P1dB
(Mw/mm)
446 436 443 414 519 400 400
P3dB (dBm) 31.5 31.5 28 28 31.5 31 31
Density
@ P3dB
(Mw/mm)
588 588 584 584 588 582 582
IDC @ 5V
(mA)
900 600 540 540 810 1080 1080
Die Size
(mm2)
5.02 1.86 2.61 2.61 3.55 4.50 4.25
State of the art output power density enables smaller die size and less DC power dissipation
State of the art output power density enables smaller die size and less DC power dissipation
6
37 to 40 GHz Power Amplifier
APH473
APH473-J Fixtured PIPO Data (250mA/mm)
111315171921232527293133
36 37 38 39 40 41
Frequency (GHz)
Gain @ 0dBm inputpower (dB)
P1dB (dBm)
P3dB (dBm)
APH473-J Fixtured IP3 Data (185mA/mm, 25 C)
36
37
38
39
40
41
42
36 37 38 39 40 41 42
Frequency (GHz)
dB
mIP3 (15dBm/tone)
IP3 (16dBm/tone)
IP3 (17dBm/tone)
IP3 (18dBm/tone)
IP3 (19dBm/tone)
IP3 (20dBm/tone)
IP3 (21dBm/tone)
IP3 (22dBm/tone)
IP3 (23dBm/tone)
Die Size = 4.5 mm2
Power Density @ P1dB = 400 mW/mm
Power Density @ P3dB = 582 mW/mm
APH473-J RF Performance
6789
1011
1213141516
36 37 38 39 40 41
Frequency (GHz)
Gai
n (
dB
)
-30-27-24-21-18-15
-12-9-6-30
gain
rlin
rlout
7
APH473-J Fixtured Gain vs Bias
8
9
10
11
12
13
14
15
16
17
34 35 36 37 38 39 40 41 42 43 44
Frequency (GHz)
250 mA/mm
200 mA/mm
150 mA/mm
100 mA/mm
50 mA/mm
APH473-J Fixtured P1dB vs Bias
202122232425262728293031
35 36 37 38 39 40 41 42
Frequency (GHz)
250 mA/mm
200 mA/mm
150 mA/mm
100 mA/mm
50 mA/mm
Performance vs. DC Bias
APH473-J Fixtured P3dB vs Bias
28.5
29
29.5
30
30.5
31
31.5
36 37 38 39 40 41
Frequency (GHz)
250 mA/mm
200 mA/mm
150 mA/mm
100 mA/mm
APH473-J Fixtured P1dB vs Bias
27
28
29
30
31
35 36 37 38 39 40 41 42
Frequency (GHz)
250 mA/mm
200 mA/mm
150 mA/mm
100 mA/mm
50 mA/mm
37 to 40 GHz Power Amplifier
8
APH473-J Fixtured IP3 Data (185mA/mm, 25 C)
36
37
38
39
40
41
42
36 37 38 39 40 41 42
Frequency (GHz)
dB
m
IP3 (15dBm/tone)
IP3 (16dBm/tone)
IP3 (17dBm/tone)
IP3 (18dBm/tone)
IP3 (19dBm/tone)
IP3 (20dBm/tone)
IP3 (21dBm/tone)
IP3 (22dBm/tone)
IP3 (23dBm/tone)
APH473-J Fixtured IP3 Data (185mA/mm, 85 C)
37.5
38
38.5
39
39.5
40
40.5
37 38 39 40 41 42
Frequency (GHz)
dB
m
IP3 (15dBm/tone)
IP3 (16dBm/tone)
IP3 (17dBm/tone)
IP3 (18dBm/tone)
IP3 (19dBm/tone)
IP3 (20dBm/tone)
IP3 (21dBm/tone)
IP3 (22dBm/tone)
Performance vs. Temperature
Gain Yield at 38.5 GHz
37 to 40 GHz Power Amplifier
9
40 to 44 GHz Power Amplifier
APH474
APH474-H Fixtured PIPO Data (250 mA/mm)
5.008.00
11.0014.0017.0020.00
23.0026.0029.0032.0035.00
39 40 41 42 43 44 45
Frequency (GHz)
dB
m
Gain @ 0dBm inputpower (dB)
P1dB (dBm)
P3dB (dBm)
APH474-H Fixtured IP3 (250mA/mm)
35.5
36
36.5
37
37.5
38
38.5
39
39.5
40
39 40 41 42 43 44 45
Frequency (GHz)
dB
m Ip3
APH474 RF Performance
02468
10
1214161820
39 40 41 42 43 44 45
Frequency (GHz)
Gai
n (
dB
)
-30-27-24-21-18-15
-12-9-6-30
gain
rlin
rlout
Die Size = 4.25 mm2
Power Density @ P1dB = 400 mW/mm
Power Density @ P3dB = 582 mW/mm
10
17 to 20 GHz Power Amplifier
APH478
APH479 Fixtured PIPO Data (250mA/mm)
10.0012.0014.0016.0018.0020.0022.0024.0026.0028.0030.0032.0034.00
16.00 17.00 18.00 19.00 20.00 21.00 22.00
Frequency (GHz)
dB
m
Gain @ 0dBmin(dB)
P1dB(dBm)
P3dB(dBm)
Die Size = 5.02 mm2
APH478 RF Performance
02468
10
1214161820
16 17 18 19 20 21 22
Frequency (GHz)
Gai
n (
dB
)
-20-17-14-11-8-5
-214710
gain
rlin
rlout
Power Density @ P1dB = 446 mW/mm
Power Density @ P3dB = 588 mW/mm
11
28 to 31 GHz Driver Amplifier
APH496
APH496-A Fixtured PIPO Data (250mA/mm, 29 C)
1012
14161820
222426
2830
26 27 28 29 30 31
Frequency (GHz)
dB
m
P1dB (dBm) @ 29 C
P3dB (dBm) @ 29 C
Gain (dB) @ 29 C
APH496-A Fixtured PIPO Data (250mA/mm, 80 C)
1012
14161820
222426
2830
26 27 28 29 30 31
Frequency (GHz)
dB
m
P1dB (dBm) @ 80 C
P3dB (dBm) @ 80 C
Gain (dB) @ 80 C
APH496 RF Performance
02468
10
1214161820
27 28 29 30 31 32 33
Frequency (GHz)
Gai
n (
dB
)
-20-17-14-11-8-5
-214710
gain
rlin
rlout
Die Size = 2.61 mm2
Power Density @ P1dB = 443 mW/mm
Power Density @ P3dB = 584 mW/mm
12
29 to 32 GHz Power Cell
Power Cell
30 GHz Cell Fixtured PIPO Data (250mA/mm)
0
5
10
15
20
25
30
35
27 28 29 30 31 32
Frequency (GHz)
dB
m
P1dB (dBm)
Gain (dB)
P3dB (dBm)
30 GHz Cell Fixtured IP3 (250mA/mm)
36
36.5
37
37.5
38
38.5
39
39.5
29 30 31 32
Frequency (GHz)
dB
m IP3
Die Size = 1.86 mm2
Power Density @ P1dB = 436 mW/mm
Power Density @ P3dB = 588 mW/mm
29 to 32 GHz Cell RF Performance
012345
6789
10
28 29 30 31 32 33
Frequency (GHz)
Gai
n (
dB
)
-20-17-14-11-8-5
-214710
gain
rlin
rlout
13
32 to 35 GHz Driver Amplifier
APH497APH497 RF Performance
02468
101214161820
30 31 32 33 34 35
Frequency (GHz)
Gai
n (
dB
)
-20-17-14-11-8-5-214710
gain
rlin
rlout
Die Size = 2.61 mm2
APH497 Fixtured PIPO Data (250mA/mm)
1012
14161820
222426
2830
31 32 33 34 35 36
Frequency (GHz)
dB
m
P1dB (dBm)
P3dB (dBm)
Gain (dB)
Power Density @ P1dB = 414 mW/mm
Power Density @ P3dB = 584 mW/mm
14
34 to 36 GHz Power Amplifier
APH502APH502 RF Performance
02468
10
1214161820
33 34 35 36 37
Frequency (GHz)
Gai
n (
dB
)
-23-20-17-14-11-8-5-214710
gain
rlin
rlout
Die Size = 3.55 mm2
Power Density @ P1dB = 519 mW/mm
Power Density @ P3dB = 588 mW/mm
APH502 CW on wafer PIPO Data (250mA/mm)
1214
16182022
242628
3032
33 34 35 36 37
Frequency (GHz)
dB
m
P1dB (dBm)
P3dB (dBm)
Gain (dB)
15
• Higher data rates dictate a need for highly linear transmit chains.
• A major contributor to linearity and cost is the driver / power amplifier combination.
• Maximizing the output power density in the driver / power amplifier chain enables
reduced die size and DC power consumption.
• Velocium’s PA MMICs have shown state of the art linearity and power density in
a production process.
Conclusion