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US 20080304312A1

(19) United States (12) Patent Application Publication (10) Pub. No.: US 2008/0304312 A1

Ho et al. (43) Pub. Date: Dec. 1 1, 2008

(54) RESISTANCE MEMORY WITH TUNGSTEN Publication Classi?cation COMPOUND AND MANUFACTURING

(51) Int. Cl. (75) Inventors: ChiaHua Ho, Kaoshing City (TW); G11 C 11/ 00 (200601)

Erh-Kun Lai, Longjing Shiang H05H 1/24 (200601)

(TW) (52) US. Cl. ....................................... .. 365/148; 427/569

Correspondence Address: MACRONIX (57) ABSTRACT C/O HAYNES BEFFEL & WOLFELD LLP 1)_ ()_ BOX 366 Memory devices based on tungsten-oxide memory regions HALF MOON BAY, C A 94019 (Us) are described, along With methods for manufacturing and

methods for programming such devices. The tungsten-oxide (73) Assignee: MACRONIX INTERNATIONAL memory region can be formed by oxidation of tungsten mate

CO., LTD., HSINCHU (TW) rial using a non-critical mask, or even no mask at all in some embodiments. A memory device described herein includes a

(21) APP1- NO-3 11/ 955,137 bottom electrode and a memory element on the bottom elec _ trode. The memory element comprises at least one tungsten

(22) Flled: Dec‘ 12’ 2007 oxygen compound and is programmable to at least tWo resis

Related U-s- Application Data tance states. A top electrode comprising a barrier material 1s on the memory element, the barrier material preventing

(60) Provisional application No. 60/943,300, ?led on Jun. movement Of metal-ions frOm the top electrode intO the 11, 2007. memory element.

i282 £2133 i284

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