IBM65 & TSMC65 Characterization and Comparison with IBM90

Preeti Mulage

01/27/2010

CKY Group

FO-4 Delay

Current Density

TT

FF

SS

• IBM 90 : ~ 24 % Variation

• IBM 65 : ~ 19-24 % Variation

• TSMC 65 : ~ 22-28 % Variation

Ion/Ioff vs Length

0

100

200

300

400

500

600

700

50 150 250 350 450

Length (nm)Io

n/Io

ff (

x1

0^

3)

IBM65

IBM90

TSMC65

Ion/Ioff at the TT Corner

Ion/Ioff vs Length

0

50

100

150

200

250

300

350

400

450

50 150 250 350 450

Length (nm)

Ion

/Ioff

(x

10

^3

)

IBM65

IBM90

TSMC65

NFET PFET

Vth vs. LengthTSMC65 ~ 17% VariationIBM65 ~ 23% Variation

NFET

PFET

Ron Values

gm vs. Vgs

IBM : 7% Variation TSMC : 3-8% Variation

gmro vs. Vgs at TT• W/L ratio maintained constant over the two technologies

TSMC65IBM65

gmro vs. Vgs at FF

TSMC65IBM65

gmro vs. Vgs at SS

TSMC65 ~ 25% VariationIBM65 ~ 20% Variation

Energy and Delay Capacitances

Gate Leakage vs. Vds

Vmin in IBM65

13

14

Vmin in TSMC65

Emin Comparison

15