9/26/2016 IMS2015 | IEEE International Microwave Symposium | Sunday Workshop Descriptions

http://ims2015.org/technical-program/workshops/6-technical-program/technical-program-general-content/254-sunday-workshop-descriptions#WSL 1/40

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Virtual Resources

Sunday Workshop Descriptions

WSA

Session: WSA RF Interference Mitigation TechniquesChair: Ranjit Gharpurey, Univ. of Texas at AustinCo­Chair: Chris Rudell, Univ. of WashingtonAbstract: This full­day workshop will consist of speakers that

address a wide range of problems related totransceiver interference management andsuppression. Topics will include general techniques toimprove receiver selectivity and reduce transmitterunwanted spurious spectrum. Speakers will come froma diverse set of backgrounds which include system,circuit, and technology design all with the goal ofinterference mitigation either through filtering orcancellation techniques. Presentations will focus ontransceiver circuit design to enhance linearity,dynamic range, improve synthesizer phase noise, andcancellation methods, all for improved selectivityperformance. Other topics which address emergingareas that attempt to improve overall spectralefficiency by realizing full­duplex systems capable ofsimultaneous transmit and receive (STARS) on thesame frequency are also discussed. In addition, somespeakers will focus on new MEMs technologies toimprove transceiver interference mitigation. Furtherpresentations on system/networking strategies relatedto integrating radios in the context of interferencemitigation will be given.

WSA­1 Electrical­Balance Duplexing for RF Self­Interference Cancellation to Enable In­BandFull­DuplexBarend van Liempd; IMECIn­band full duplex is a relatively new communication paradigmwhere the TX and RX operate at the same time, using the samespectral resources. In this case, the local TX causes so­called selfinterference at exactly the same frequency as the wanted signaland with much higher magnitude than the wanted signal. Toenable such wireless links, the self interference must becancelled, suppressed or filtered at various stages throughout theRX chain.This talk discusses electrical balance duplexers as part of thesolution, providing high self interference cancellation directly atRF frequencies, thereby severely reducing receiver constraints.These duplexers mimic an antenna's impedance using an on chiptunable dummy impedance to ensure destructive cancellation ofthe self interference at the RX port. System­level specificationsas well as design techniques are discussed, to give insight intoboth current state of the art and on going research on thispromising technique.

WSA­2

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Home / Technical Program / Workshops / Technical Program / Technical Program ­ general content /Sunday Workshop Descriptions

9/26/2016 IMS2015 | IEEE International Microwave Symposium | Sunday Workshop Descriptions

http://ims2015.org/technical-program/workshops/6-technical-program/technical-program-general-content/254-sunday-workshop-descriptions#WSL 2/40

Micromechanical Filters: Fundamentals andApplication to Interference MitigationRoy H. Olsson III; DARPAThe radio frequency (RF) spectrum is becoming increasinglycrowded, with more users accessing an increasing amount ofbandwidth. As a result, wireless handsets are experiencing arapid increase in the number of frequencies and standardssupported on a single platform. While the other components thatcomprise the RF front­end such as amplifiers, mixers andswitches are experiencing higher levels of co­integration, amodern cellular radio includes > 30 discrete filter dies toaccommodate the growing number of RF bands. A miniature andadaptive filter technology that supports many wireless standardson a single chip is needed to continue the increase in wirelessdata and functionality seen over the past decade.Piezoelectric microresonators are an enabling technology forincreasing adaptability, improving performance andminiaturization of RF devices. This talk will present an overviewof piezoelectric microresonator and filter research. First, the needfor adaptive and reconfigurable filtering in next generationwireless devices will be described. The performance andadaptability advantages derived from micromachining ofpiezoelectric resonators will be presented, followed by acomparison with competing technologies. Reconfigurable filterarrays realized in thin film piezoelectric materials will bepresented along with the application of these components inadaptive wireless systems. Finally, a look toward next generationpiezoelectric materials and devices such as thin film lithiumniobate resonators and tunable acoustic filters will be discussed.

WSA­3 Interference Rejection exploiting Switched­R­CTechniques Compatible with CMOSEric Klumperink; University of TwenteWith the increasing number of wireless users, interferencerejection is becoming the main design challenge in CMOSReceiver front­ends. Techniques to improve the Spurious FreeDynamic Range (SFDR) of radio receivers and cancel interferenceare hence important. As CMOS technology offers switches thatimprove with technology, while highly linear capacitors andresistors are also available, these are the components of choiceto realize high SFDR. This contribution will review some recentlyproposed ideas to improve the SFDR of CMOS radio receivers.Examples are mixer­first receivers exploiting switched­R orswitch­R­C circuits, and N­path filters that simultaneously realizespatial domain and frequency domain filtering. Also, an in­bandfull­duplex receiver will be discussed.

WSA­4 Broadband channelizer architectures withdynamic range relaxationRanjit Gharpurey; University of Texas at AustinArchitectures for implementation of broadband channelizers willbe described. These architectures split a broad bandwidth intocontiguous sub­bands with a single fixed frequency LO source.Frequency­translation based techniques for interferencesuppression in such broadband radios will be described. The useof channelizers for rapid interference detection will be discussed.

WSA­5 Self­Interference Cancellation and FilteringTechniques for Reconfigurable Frequency­Division­Duplex/Full­Duplex/Co­Existing RadiosHarish Krishnaswamy; Columbia UniversityMulti­band frequency­division duplex radios require numerousoff­chip duplexers, which limit the form factor in mobileapplications. Self­interference cancellation can relax duplexerisolation requirements, enabling compact/tunable duplexers. Full­duplex radios have recently emerged as a promising paradigm todouble network capacity and spectrum utilization. Self­interference cancellation to the tune of >100dB is mandatory insuch systems, and must be pursued in the antenna, RF/analogand digital domains.

WSA­6 Self­Interference Cancellation in the RF DomainSachin Katti; Stanford University

9/26/2016 IMS2015 | IEEE International Microwave Symposium | Sunday Workshop Descriptions

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Self­interference arises when radios are tightly packed in adevice, its experienced in­band, adjacent­band and out of band.These are commonly known as in­band full duplex, frequencydivision full duplex and radio coexistence in industry parlance.This talk reviews our recent work on self­interferencecancellation, and discusses how it can be applied to handle self­interference problems in multi­band multi­protocol devices.

WSA­7 Interference in Near­Field Communications(NFC) circuits for mobile handsetsMagnus Wiklund; Qualcomm CorporationIntegrating multiple standards in mobile handsets presentsnumerous difficulties with respect to interference. Typicalconnectivity systems feature WLAN, BT, FM, GPS, and NFC invarious combinations; in most applications connectivity mustcoexist with WAN. Despite challenges with co­existence ofmultiple radio standards a user expect their simultaneousoperation to be seamless. This paper focuses on the NFCtechnology with special emphasis to the transmitter andfundamental characteristics of the NFC system.

WSA­8 Strategies for Transmitter Self­InterferenceManagement & MitigationChris Rudell; University of WashingtonManagement of self­interference using numerous discrete duplexfilters has become a major barrier for current and future multi­band highly­programmable full duplex radios. This presentationexplores some of the potential alternative integratedarchitectures to address self­interface without the need for costlyand area consuming discrete filters. A key challenge for any self­interference cancellation systems is the potential injection ofnoise in the receiver front­end, the matching of phase andamplitude between the RX input and the canceller. These topicswill be explored and some results from a recent integrated self­interference cancellation will be presented.

WSB

Session: WSB Digital and Analog Techniques for Power­Efficiency Enhancement in Wireless Transmitters

Chair: Oren Eliezer, EverSet Technologies / TallannQuestCo­Chair: Ayman Fayed, Iowa State UniversityAbstract: Transmitter power­efficiency has always represented

a significant challenge in wireless devices, whetherthese are for battery­operated mobile devices orinfrastructure applications.As the targeted bandwidths become wider and thespectral efficiencies higher, it is becoming even morechallenging to develop power­efficient transmittersthat meet all the requirements of the wireless systemsthey serve.This workshop, involving experts from industry andacademia, will cover various architectures andtechniques for power­efficient transmitters, includingboth analog and digital approaches.

WSB­1 The Three Operating Modes of Dynamic­Power­Supply TransmitterEarl McCune; RF Communications ConsultingAny amplifier operated with a varying power supply is actually a3­port circuit. When an amplifier is characterized as a 3­port fordynamic power supply operation, three separate operatingmodes (2 nonlinear, 1 linear) appear: L­mode, C­mode, and P­mode. Each of these modes, along with their relationships anddifferences, are presented and discussed.

WSB­2 Integrated and non­integrated EnvelopeTracking Solutions

9/26/2016 IMS2015 | IEEE International Microwave Symposium | Sunday Workshop Descriptions

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Jerry Lopez; NoiseFigure Research / Texas Tech UniversityThe recent necessity for wide bandwidth and lower powercommunications systems have increased the need for highly­efficient highly­linear power amplifiers (PA). Currentcommunication protocols can reach up to 12dB peak­to­averageratio (PAR), which directly affects the linearity and efficiency ofthe PA. Techniques such as envelope­tracking (ET) and envelope­modulation (EM) are being utilized to increase efficiency andenhance linearity of the amplifier even when operated atcompressed modes. In this tutorial, we will analyze ET and EMsystems from a basic level to its recent forms including currenttesting techniques. An overview of envelope modulators,including integrated and non­integrated versions, will be offered.Future high­power and sub­watt ET/EM systems will also bediscussed.

WSB­3 Design Challenges of Envelope Tracking andPolar Architectures as Supply­Modulation BasedTechniques for Enhancing Transmitter EfficiencyJennifer Kitchen and Bertan Bakkaloglu; Arizona State UniversityThis tutorial will provide an overview of design challenges andadvances in supply­modulation techniques for improvingtransmitter efficiency. A comparison of existing adaptive biasingarchitectures and their implications to the RF transmitter'selectrical efficiency and linearity will be presented. Emphasis willbe placed on practical limitations for implementing envelopetracking and polar transmitters; highlighting the supplymodulator's design challenges. The best­in­class publishedperformance for the most recent works in supply­modulationbased architectures, including the envelope­tracking Doherty and'digital' bias modulation, will also be discussed.

WSB­4 Outphasing Techniques for Achieving High­Efficiency in TransmittersTaylor Barton; University of Texas at DallasOutphasing amplifiers control their output power using relativephase control of efficient branch PAs, offering the potential forlinear amplification with high efficiency over a wide range ofoutput power levels. The advantage of this approach is the highefficiency of the constituent branch PAs, which can be highlysaturated or operate in switched­mode. Conventional outphasingtechniques, however, have several limitations in achievableefficiency, primarily relating to the power combining network.This talk will present an overview of classic outphasingtechniques, including systems based on isolating and losslesspower combining. It will then focus on more recent techniques toimprove efficiency under backoff, including integratedimplementations.

WSB­5 Power Supply Noise Mitigation techniques for RFPAsAyman Fayed; Iowa State UniversityRF Power Amplifiers (PAs) are typically the most power­demanding components in wireless transmitters. Therefore,converting power from the battery to these PAs as efficiently aspossible is very critical. Although switching power converters areknown to be highly efficient, adopting them to power RF PAsfaces many hurdles, particularly due to the switching noiseassociated with them, which tends to significantly degrade thesystem performance. This tutorial will discuss various techniquesto mitigate the impact of this switching noise, including activeripple cancellation, delta­sigma control, and different spread­spectrum control techniques.

WSB­6 A Fully Integrated High­Efficiency DigitalTransmitter Based on PWM and Class­D PALei Ding and Rahmi Hezar; Texas Instruments This tutorial presents a fully digital transmitter architecture thatcan be used to replace the entire analog/RF signal chain in atraditional transmitter. The new architecture utilizes sigma­deltamodulation and pulse­width modulation to convert highresolution baseband I and Q signals into 3­level switchingsignals, thereby allowing efficient Class­D PA stages to be used.In addition, cascaded sigma­delta stages and switched­capacitorcombining are incorporated into the architecture to significantly

9/26/2016 IMS2015 | IEEE International Microwave Symposium | Sunday Workshop Descriptions

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reduce the out­of­band quantization noise while maintainingexcellent efficiency. The digital transmitter architecture isdemonstrated through a 45 nm CMOS test chip, which achievesexcellent efficiency and linearity.

WSB­7 Linearizing Power Amplifiers with Class­GAnalog Voltage­Supply ModulatorsJeffery Walling; University of Utah With increasing energy demands for wireless PAs, improvementsin energy efficiency are vital. CMOS optimization for lowswitching resistance leads to the use of CMOS switched­modepower amplifiers. These amplifiers rely on external linearizationcircuits to amplify non­constant envelope modulated signals. Inthis talk, we will compare several techniques for linearization,with particular emphasis on analog supply modulationtechniques. Practical design considerations for RF switched­modePAs will be given, along with design considerations for analogsupply modulators. Several techniques will be compared and acase­study of a class­G analog supply modulator will beexamined in detail.

WSB­8 Digital Approaches for Power EfficiencyEnhancement in TransmittersOren Eliezer and Sankalp Modi ; EverSet Technologies /TallannQuest, University of Texas at Dallas This tutorial proposes a unique digital approach to realizingpower­efficient transmission, which is based on a lookaheadwindow that provides a prediction of a segment of the envelopeof the signal. Examples for implementations of this digitallyintensive approach will be given, including several differentenvelope tracking systems and a Doherty based architecture fora high­power transmitter.

WSC

Session: WSC Highly Efficient RF Frequency Generation inNanometer CMOS Technologies

Chair: Salvatore Levantino, Politecnico di MilanoCo­Chair: Stefano Pellerano, Intel Corp.Abstract: The energy efficiency of RF frequency synthesizers is

of paramount importance in high­performance mobileradios that pose stringent phase­noise requirements,as well as in emerging wireless applications thatfeature extremely low power budgets (sensors,wearables, internet of things). Unfortunately,improving spectral purity in conventional phase­lockedloops is obtained at the price of higher powerconsumption. This workshop will discuss the mostrelevant directions that have been investigated inrecent years to break this trade­off by both circuitdesign and architectural innovations. The workshopwill begin by reviewing the fundamental limitations ofthe phase­noise­versus­power trade­off in oscillatorsand the recent advances in the design of highlyefficient oscillators operating in unconventionalclasses. Then, it will move to discuss the mainarchitectural innovations relaxing the noise­powertrade­off in fractional­N PLLs: (i) adaptive phase­noisecancellation, (ii) nested­and­cascaded architecture,(iii) sub­sampling phase detection, (iv) injection­locked PLLs. As CMOS technologies scale down andaccurate DSP is enabled at low power and small area,the traditional analog PLLs are also moving towardsmostly digital designs, which are demonstrating betterefficiency and scalability, and even towards fullydigital designs, achieved via automatic synthesis­and­layout flow. In the second half of the workshop, themost recent realizations of analog, hybrid and digital

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9/26/2016 IMS2015 | IEEE International Microwave Symposium | Sunday Workshop Descriptions

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frequency synthesizers will be critically compared fromthe efficiency and the scalability points of view.

WSC­1 Fundamental limitations in LC oscillators noise­power efficiencyDanilo Manstretta; University of Pavia, ItalyModern communication systems need clocks with very low phasenoise (or jitter). Another increasingly key requirement is lowpower consumption, leading to the prominence of the phasenoise vs power trade­off. To minimize power dissipation for agiven phase noise integrated oscillators often use as load high­QLC­resonators. Through the years several topologies have beenproposed. However, it is not always easy to ascertain whetherthe dominant reason of improvements comes from topology orimproved resonator Q. The goal of this talk is to ascertain theultimate performance limit for some of the most used oscillators,including most types of class­B (standard, AC­coupled and withtail filter), class­C and class­F LC oscillators as well as distributedoscillators (traveling­wave and standing­wave and hybrid). In thepast, many authors have analyzed oscillators generally preferringrigor to intuitiveness. An intuitive yet sufficiently accurateformulation of phase noise is presented. To compare differenttopologies an excess noise factor that represents the differencebetween the maximum achievable Figure of Merit and the actualone is also introduced. In addition, the theory is experimentallyverified in a rigorous and objective way comparing differenttopologies in the exact same operating conditions, i.e.technology, Q of the tank, dividers, etc. Measurements on severalchip prototypes allow to verify, in an unbiased way a very goodagreement between the model and both simulations andmeasurements.

WSC­2 Fully Integrated Phase Noise Extraction andCancellation Techniques for Ring OscillatorBased Fractional­N PLLsBertan Bakkaloglu; Arizona State University, Tempe, AZ, USARing­oscillators (ROs) provide a low­cost digital VCO solution infully integrated PLLs. However due to their supply noisesensitivity and high noise floor, their applications have beenlimited to low performance applications. The proposedarchitecture introduces an analog feed­forward adaptive phasenoise cancellation architecture that extracts and suppressesphase noise of ring­oscillators outside the PLL bandwidth. Theproposed technique can improve the phase noise at an arbitraryoffset frequency and bandwidth, and after initial calibration forgain it is insensitive to process, voltage and temperaturevariations. An experimental fractional PLL, with a loop bandwidthof 200 kHz is utilized to demonstrate the active phase noisecancellation approach. The cancellation loop is designed tosuppress the phase noise at 1 MHz offset by 12.5 dB andreference spur by 13 dB with less than 17% increase in theoverall power consumption at 5.1 GHz frequency. The measuredphase noise at 1 MHz offset after cancellation is ­105 dBc/Hz. Theproposed RO­PLL is fabricated in 90nm CMOS process. With noisecancellation loop enabled, the PLL consumes 24.7 mA at 1.2Vsupply.

WSC­3 Low­noise high­OSR sigma­delta fractional­Nfrequency synthesizerSeongHwan Cho; Korean Advanced Institute of Science andTechnology, KAIST, Daejon, KoreaIn this talk, reference multiplication techniques to achieve low­noise low­power fractional­N frequency synthesizer is presentedby means of nested and cascaded PLL architecture. In thenested­PLL, intermediate output of the feedback divider is usedas the delta­sigma modulator (DSM) clock so that the DSMachieves high oversampling ratio (OSR) and thus lowquantization noise. Noise aliasing due to the divider is suppressedby having an anti­alias filter implemented using a PLL. In thecascaded­PLL, reference multiplied fractional­N synthesis isachieved by employing two PLLs in cascade: an integer­N PLLfollowed by a fractional­N PLL. In order to reduce the spur andphase noise of the integer­N PLL, reference injection scheme withdual­pulse ring oscillator is used, which eliminates the need forinjection timing adjustment. Prototype results of these PLLs in130nm CMOS demonstrate state­of­the­art noise and powerconsumption without requiring any complex calibration

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WSC­4 High­performance fractional­N frequencysynthesizers with large divided ratiosTai­Cheng Lee; National Taiwan University, Taipei, TaiwanFor conventional charge­pump­based PLLs, charge pump circuitsand phase detectors are the dominant sources of in­band noise,especially for the one with a large divided ratio. Furthermore, Σ­Δmodulators in fractional­N PLLs induce significant quantizationnoise to deteriorate the phase noise of the output clocks.Sampling­based PLLs are proposed to achieve betterperformance. In this talk, prior arts on fractional­N PLL designare reviewed first. Then, the detail design and an analysis of asub­ sampling PLL are introduced to achieve a low in­band phasenoise of ­112 dBc/Hz at a 2.3­GHz output frequency.

WSC­5 Synthesizable Digital PLL Using Injection­LockArchitectureKenichi Okada; Tokyo Institute of Technology, Tokyo, JapanIn this presentation, a synthesizable PLL using the injection­locktechnique is introduced. Synthesizable PLLs using common digitalsynthesis tools can be portable and scalable for processtechnology, which is advantageous in nanometer­scale CMOStechnology. An injection­lock PLL is one of the good candidates ofsynthesizable PLL because the feed­forward phase­lockmechanism can relax the fine timing design of TDC/DTC­basedPLL.

WSC­6 Ring­Based RF Digital Frequency SynthesizersAmr Elshazly; Intel Corporation, Hillsboro, OR, USARing­based digital frequency synthesizers have recently becomepopular as they offer certain advantages over their analog andLC­based counterparts. Ring­based DPLLs offer great areasavings, immunity to PVT variations, simplify several aspects ofthe design, and easier portability to newer processes. Thispresentation describes DPLL implementations identifying thedesign bottlenecks, and discusses recent design techniquesproposed to achieve high performance with low power for bothinteger­N and Fractional­N ring­oscillator based RF digitalfrequency synthesizers.

WSC­7 Area efficient analog PLLsJing­Hong Conan Zhan; Mediatek, Hsinchu, TaiwanIt is generally believed that ADPLL will benefit directly fromprocess scaling in terms of power and area. In this workshop,what limits conventional analog PLL from scaling will be revisited.Recent techniques and design examples toward an area­efficientanalog PLL will be reviewed. Analog PLL area shrink with respectto process scaling will be discussed.

WSC­8 The best of both worlds: combining digital andanalog techniques in high performance PLLsMark Ferriss; IBM T. J. Watson Research Center, YorktownHeights, NY, USAThe recent interest in digital PLLs is primarily motivated by asearch for circuits which are architecturally better aligned withmodern digital­oriented CMOS manufacturing processes.However, some of the best features of analog PLLs, for example,highly linear phase detection, are difficult to replicate in fullydigital PLLs. In this work, we demonstrate how digital and analogPLLs can be combined in a hybrid PLL such that the best featuresof both architectures can by utilized, while avoiding the worstfeatures of both. In addition, we will demonstrate how advancedΔΣ noise cancellation can be implemented in the context of ahybrid PLL. This will be demonstrated in the context of a 13 to26GHz highly flexible hybrid PLL with an embedded ΔΣ noisecancellation scheme.

WSC­9 Ultra­High Speed Direct Digital FrequencySynthesisFa Foster Dai; Auburn University, Alabama, USAThe recent success of ultra­high­speed direct digital synthesizer(DDS) provides an excellent solution to wideband complexwaveform generation and digital modulation for applications suchas digital radar, telemetry, RF sensor, instrument and wireless

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communication. This talk presents advanced high­speed DDSdesigns, focusing on techniques that can achieve high clockfrequency, low power, high dynamic range and improved spectralperformance. Techniques such as spur cancellation, pre­distortion, ΣΔ modulation, digital calibration and time­interleaving are addressed. A number of design examples arepresented to illustrate the state­of­the­art developments in thisfield. A SiGe DDS MMIC with 11­bit phase and 10­bit amplituderesolutions achieves clock frequency of 8.6 GHz and spurious­free­dynamic­range (SFDR) of 45 dBc at 4.3 GHz Nyquist output.

WSD

Session: WSD Mulit­Gbps Wireline Transceivers: Inching Closerto RF/MM­wave IC Domain

Chair: Hiva Hedaytai, XilinxCo­Chair: Mona Hella, Rensselaer Polytechnic InstituteCo­Chair: Burak Catli, BroadcomAbstract: High Performance Computing (HPC) installations and

exaFLOP supercomputing require high bandwidth chip­to­chip and system­to­system communication links.One critical block in such systems is theSerializer/Deserializer (SerDes) which formats andtransfers data over either electrical or optical links.Moving data transfer rates beyond 32Gb/s and 64Gb/sclearly places some of the SerDes design challengesinto the RF/Microwave domain. The high data ratecoupled to the limits on the transfer medium, requirerelatively complex modulation techniques. The costand power consumption have also become morepronounceable, particularly with super data centersemploying several thousand of such transceivers. Thisworkshop presents an overview of recent advancesand ongoing research in Multi­Gbp/s serial links as itrelates to the world of RF/Microwaves. The workshopwill cover wideband microwave clock generationschemes, clock and data recovery circuits along withvarious equalization techniques. In addition 30+GS/sADC architectures for 60+Gb/s wireline receiverapplications will be discussed. We will also explorelow­power circuit implementations for 25G+ I/Os,where we discuss both analog and digitalimplementations.

WSD­1 Design Techniques for Scalable, Sub­pJ/b SerialI/O TransceiversProf. Samuel Palermo; Texas A&M UniversityIn order to meet the inter­chip bandwidth demands of futuresystems and comply with limited IC power budgets, both chip­to­chip data rates and I/O energy efficiency must improve. This is asignificant challenge for electrical interconnect architectures,which currently offer the lowest­cost solutions, as the frequency­dependent loss of conventional electrical channels prohibitsignificant data rate scaling without efficient equalizer circuits.This tutorial will discuss key design techniques that enablescalable, sub­pJ/b serial I/O transceivers. The first part of thetutorial will discuss low power transmitter and receiver designscapable of low­voltage operation and fast power­statetransitioning. Next, low­complexity clocking architectures aredetails. The tutorial concludes with a discussion on low­powerequalizer circuits that enable the support of higher data ratesover lossy channels.

WSD­2 Design techniques for 25G+ analog & digital I/OimplementationsDr. Thomas Toifl; IBM, Zurich, SwitzerlandIn this talk we will explore low­power circuit implementations for25G+ I/Os, where we discuss both analog and digitalimplementations. We start by giving a short introduction to

9/26/2016 IMS2015 | IEEE International Microwave Symposium | Sunday Workshop Descriptions

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important wireline I/O standards, and describe the associatedequalization requirements. We then turn to the equalizationoptions in the data path using a feed forward equalizer (FFE) anda continuous­time linear equalizer (CTLE), followed by adiscussion of design options for decision feedback equalizers(DFE). In the second part of the talk we will turn to digital I/Oimplementations: Here, we will first discuss the design andrecent results of high­speed low­power SAR ADCs. We thendescribe methods to reduce the latency in the CDR logic, which isrequired to compensate the latency of the ADC withoutpenalizing jitter tolerance. We will then discuss low­powersolutions for digital equalizer implementations.

WSD­3 Review of ADC­Based CDRs and the Challengesfor Higher Data RatesProf. Ali Sheikholeslami; University of TorontoADC­Based Clock and Data Recovery circuits are one of primarycandidates for the 60+Gb/s wireline receivers, as they canprovide significant channel equalization in digital domain. This isespecially important at higher data rates as the channelattenuation become more significant at the Nyquist rate and asthe attenuation profile shows a higher complexity that cannot beeasily compensated for by analog equalization. The mainchallenge in designing ADC­based CDRs is their high powerconsumption, especially the power consumed by the ADC's at thefront end. This talk will review the ADC­based CDRs and thetechniques proposed to address their challenges.

WSD­4 Transceivers for 40Gbps and 100Gbps WirelineConnectionsDr. Jun Cao; BroadcomThe demand for wireline transceivers running at rates 25Gbpsand higher has been fueled by the exponential growth in 40Gband 100Gb Ethernet in recent years. This talk will first presentthe design of a transmitter/receiver chipset running at 44Gb/s in40nm CMOS with state­of­art jitter and power performance.Various techniques are employed to overcome the speedlimitation of the technology, including bridged­shunt and T­coilshunt­series peaking and a new pipelined CDR/DMX structure.The design of a low power 4x28Gb/s transceiver for 100GbE isthen discussed, particularly the reconfigurable, distributed andtuned clock structure, which saves 70% of power compared toconventional designs. At present, 100G coherent systems arebeing deployed rapidly but they also pose special challenges inthe circuit design. The talk will conclude with the discussion on aquad­channel 128Gb/s coherent DP­QPSK transmitter whichachieves an RJ of 103fsrms and I­Q data skew much less than1ps across the variation in temperature and supplies.

WSD­5 A 40nm High Performance Analog Multi­ToneTransceiver for Multidrop Processor­MemoryInterfacesProf. Yusuf Leblebici; École polytechnique fédérale de Lausanne,SwitzerlandA 7.5 Gb/s mixed NRZ/multi­tone transceiver for multi­drop bus(MDB) memory interfaces is designed and fabricated in 40nmCMOS technology. Reducing the complexity of the equalizationcircuitry on the RX side, the proposed architecture achieves 1pJ/bit link efficiency for a MDB channel with 45 dB loss at 2.5GHz. The transmitted spectrum composed of BB and I/Q sub­bands with the capability to match the modulation frequency ofthe entire TRX with respect to the channel response over+/­25% range. A switch­cap mixer/filter is developed to downconvert and equalize the I/Q sub­bands in RX very efficiently.

WSE

Session: WSE Mixed­Signal Power Amplifiers and RF­DACsChair: Hua Wang; Georgia Institute of TechnologyCo­Chair: Robert Staszewski; University College DublinCo­Chair: Renaldi Winoto; MarvellAbstract:

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The growing demand for a higher data­rate and longerbattery life poses stringent requirements on the poweramplifiers (PAs) in mobile handset transceivers.Silicon­based PAs, e.g., in CMOS or SiGe HBTprocesses, have recently emerged as competitivesolutions for many applications. Besides low­cost andhigh integration, silicon­platforms offer unparalleledsignal processing/computation capabilities, which canbe exploited for PA performance enhancement withlow overhead. RF­DAC is one perfect example of thisnew PA paradigm­shift. It merges digitaloperation/processing and analog/mixed­signaltechniques with PA architectures to achieveefficiency/linearity enhancement, performance self­healing, and antenna load compensation, etc. As aresult, advanced silicon PA has expanded from astandalone RF building block to a complex mixed­signal/mixed­mode system with orchestratedcollaboration among analog, digital, and large­signalRF operations. This workshop is to review this recentwave of innovations on "Mixed­Signal PAs and RF­DACs" and bring the state­of­the­art technologies tothe attendees.

WSE­1 Switched­Mode PA for Broadband and RF­DACsProf. Robert Staszewski, University College DublinThis talk will provide an overview of switched­mode poweramplifiers and RF DACs in CMOS wireless transmitters. At thecore of this trend is CMOS technology scaling. As the switchingspeed of CMOS transistors has been increasing, advantages ofswitched­mode class­E, class­D and class­F operations have beenmore obvious not only from the power efficiency standpoint, butalso from performance and transfer function repeatability.Furthermore, technology scaling has allowed full integration ofmatching networks between the last stage of PA and an antennafeed, which further allowed to reduce the total solution cost. Thefinal benefit of the technology scaling is the partition of the PA“switch” into a large number of controllable switches for thepurpose of amplitude modulation.

WSE­2 Leveraging RF­DACs to Enhance the Doherty PAArchitectureProf. Hua Wang, Georgia Insititue of TechnologyThe ever­increasing demand of a high data rate has led to a wideuse of spectrum­efficient modulations in modern wirelesssystems. These schemes often present high peak­to­averagepower ratios (PAPR), which require the power amplifier (PA) towork at the power back­off (PBO) mode. Moreover, sophisticatedconstellations are often employed, posing additional linearityrequirements on the PA for high fidelity signal transmission. Bothaspects may lead to substantially degraded PA efficiency inpractice.We present a CMOS compatible digital Doherty polar poweramplifier architecture to address the PA trade­off challengesamong power back­off, linearity, and efficiency. Leveraging thedigital­intensive architecture, the gain relationship of the Dohertymain/auxiliary amplifier paths can be precisely controlled, whichachieves optimized Doherty "active load­pulling" operation forenhanced PA back­off efficiency. Moreover, the architectureprovides the Doherty power amplifier with highlyreconfigurability, linearity improvement, and robust Dohertyperformance against antenna load mismatch. In addition, we willexplore the feasibility of combining this digital Doherty PAscheme with other PA techniques to achieve new RF PAarchitectures with hybrid­mode efficiency/linearity enhancement.

WSE­3 Switched­Capacitor and Class­G PAProf. Jell Walling, University of UtahWith increasing energy demands for wireless PAs, improvementsin energy efficiency are vital. Leveraging CMOS prowess as aswitch is critical and leads to the development of mixed­signal RFPAs. A switched mode PA modulated by an analog class­G supplymodulator will be introduced. Following this, the switchedcapacitor PA concept will be introduced along with a class­G

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digitally supply modulated PA. Design considerations for both ofthese mixed­signal PAs will be discussed in detail, andcomparisons and contrasts for the designs will be offered.Specifically tradeoffs in linearity, efficiency and noise will beanalyzed and discussed. Detailed design examples will be offeredfor all of the presented mixed­signal PAs.

WSE­4 Polar Antenna Impedance Detection in a CMOSPower Amplifier and Impedance Tuning with AnSOI Switch based Impedance TunerDr. Shouhei Koussai, Tobisha CorporationThe recent demand for wideband and small­sized antennaunfortunately leads to potentially larger antenna load mismatchesin practice. However, this is a critical issue for achieving a highlyefficient power amplifier in real use. In this talk, an antennaimpedance detection and tuning scheme, which takes advantageof the unparalleled CMOS signal processing capability, ispresented as a promising solution that could be directlyembedded with CMOS power amplifier (PA) designs. Unlike manyother reported antenna tuning techniques, we propose a polarimpedance scheme, which can detect and correct both real andimaginary antenna impedance mismatches. Our detection circuitis integrated on a CMOS PA chip, and the antenna impedance canbe tuned to accurately track non­50Ohm optimum loadimpedance for the PA with wide frequency range and back­offoutput power. In addition, the tuning system can handlemodulated signals and can track the time­varying antenna loaddue to the proximity effect.

WSE­5 Self­Healing for Mm­Wave Power AmplifiersProf. Steven Bowers, University of VirginaAdvances in CMOS technology create opportunities andchallenges for power amplifiers (PAs) at mm­wave frequencies.Process variation, modeling inaccuracies, load impedancemismatch as well as partial and total transistor failure cansignificantly degrade the performance of the PA at thesefrequencies, especially early in a process node¹s life­cycle. Theseuncertainties and variation can require either a less aggressivemm­wave design, multiple design spins, a reduction in yield orsome combination of all three. Self­healing uses the vast digitalcomputational power of CMOS through an integrated mixedsignal feedback loop to sense performance degradation of themm­wave circuit, and correct for it by actuating the circuit. Thispresentation will explore various techniques and costs associatedwith producing a robust and effective self­healing mm­wave PAand will go through an example of such a system.

WSE­6 Holistic Design Approach for Mm­WaveDigitally­Assisted Power Amplifiers (DAPA)on CMOS and GaN Dr. Tim LaRocca, Northrop Grumman A top­down design review of the system, circuit andmeasurements of digitally­assisted power amplifiers (DAPA) onboth CMOS and GaN will be provided. This is based on threepublished designs including a 45GHz and 94GHz 4b DAPA on IBM10LPe (65nm bulk) and 12SOI (45nm SOI), and 6­18GHz GaNDAPA for 64QAM modulation. This presentation will start with areview of high­level modeling and simulation of the DAPA usingVerliogA and CMOS device models to predict efficiencyimprovements and define system requirements. This will befollowed by a brief review of the digital algorithm andimplementation including tradeoffs between ASIC and FPGAsolutions. Finally, a practical review of the design of the DAPAwith explanation of measurements and future work will concludethe talk.

WSE­7 Next Generation Base station Transmitters/ RF­DACSProf. Leo de Vreede, Delft University of TechnologyNext generation base station transmitters need to be efficient andwideband in nature in order to support multiple communicationstandards / bands in an energy and cost effective manner. Thetrend to smaller cell sizes, lower transmit powers and increasedbandwidths puts new constrains on the TX­system concept,system­integration and the power consumption of the total TX

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line­up. With this trend in mind, new PA techniques and RF­DACapproaches will be considered that can provide higher systemintegration, bandwidth and overall line up­efficiency.

WSE­8 Digital Transmitters and RF­DACs for CMOSTransceiver SoCs with Self­Compensation/PredistortionDr. Oren Eliezer, EverSet Technologies/TallannQuestThis tutorial will present several extensively­digital topologies forwideband transmitters/RF­DACs, some of which wereimplemented at Texas Instruments in nanometer CMOStransceiver SoCs. Productization aspects, such as built­in testingand “self­healing” (built­in calibration and predistortion), will behighlighted.

WSF

Session: WSF Next Generation 77­81 GHz Automotive RadarsChair: Gabriel M. Rebeiz, UCSDCo:Chair: Juergen Hasch, Robert Bosch GmbHAbstract: Automotive radars at 77 GHz are being shipped at

more than 1 million units per year for long­rangeradars (LRR) and medium range radars (MRR) withapplications in automatic cruise control (ACC), collisionavoidance, and in imaging/tracking radars forautonomous driving. Radar topologies include lens­based systems, digital beamforming and RF­beamforming systems. Millimeter­wave radars areessential for autonomous driving, and new systemswith wider bandwidths, better tracking and imagingsoftware, and better scanning techniques are beingdeveloped to meet this need. This workshopassembles a mix of industry and universities topresent the latest techniques in automotive radars,both from the systems/application perspective andfrom the mm­wave electronics and hardwareperspective (antennas, packaging, etc.). The workshopwill have a mix of users (Daimler Benz, Toyota),chip/electronic developers (Freescale, Infineon), andUniversities, and promises to be comprehensive with awide but in­depth view of this area.

WSF­1 Trends in Roadway Domain Active Sensing Stephen H. Bayless; ITS AmericaThe talk analyzes the merits and limits of active sensingtechnologies (Radar, LIDAR and Ultrasonic detectors) and howthe demands for such technologies is evolving. Of all the roadwaydomain active sensing technologies, vehicular radar is the best atdetecting typical driving conflicts representing the most commoncrash risks and thus likely will serve as a key component ofcollision avoidance systems in many next generation smartvehicles. The report examines how future Vehicle­to­Vehiclecommunications and Active Traffic Management techniques willimprove and complement active sensing in vehicle crashavoidance and driving automation.

WSF­2 Present Research Activities and FutureRequirements on Radar from a carmanufacturer's point of viewJuergen Dickmann; Daimler Benz, Ulm, GermanyAUTOMOTIVE RADARS have been the backbone for active safetyand advanced driver assistance systems (ADAS) for decades.With the introduction of the collision prevention assist, Radarsensors have become standard equipment in Mercedes­Benzpassenger cars. The range of applications they enable coversdetection tasks like blind spot assist up to automated brakingsystems like the Pre­Safe Brake assist available in the S­Class.For heavy trucks and vans they enable cruise control and braking

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support. In recent years, radar has more and more alsoconsidered as enabler for agency driven safety applications likethe EURO­NCAP, which grant star ratings. In former days, singlesensor concepts have been applied to realize ADAS, nowadaysmulti­sensor networks with short­,mid­, and far range radars arebeing applied. Today, in state of the art cars four to six radarsare being used. In 2013, the first stride ahead towards higherautomated systems in real serial cars has been made with theBertha drive with the Mercedes­Benz S­Class Intelligent drive.The higher degree in automation of ADAS, where the driver isgoing to be exculpated increasingly from the pure driving task,imposes much higher performance to the environmentalperception task and hence to the automotive radar. The paperwill provide an overview on present automotive radars at DaimlerAG, will give an outline on future requirements for highlyautomated driving and will present some related researchexamples on radar based environmental perception.

WSF­3 High­Resolution Phased­Array AutomotiveRadarsDr. Jae S. Lee; Paul Schamlenburg; Kyosuke Miyagi; ToyotaTechnical Center, Ann Arbor, MichiganAutomotive radar is a critical sensing unit for vehicle safety,automated driving assistance etc. along with lidar and camera.This talk will introduce superior properties of phased array beamscanning method, prototype system development with SiGe RFICand its performance verification.

WSF­4 Automotive Radar Technology TrendsJuergen Hasch; Robert Bosch GmbH, Stuttgart, GermanyIn the last few years automotive radar has been transformedfrom being a niche sensor to becoming standard even in middle­class cars. With Euro­NCAP ratings now requiring automatedbraking and pedestrian safety functionality, radar is oftenidentified as the best suited sensor for this purpose.Additionally, future automated driving will require detailed andhighly reliable information on the environment and surroundingstreet traffic. This requires radar sensors to provide more detailedinformation about the environment, foremost in the spatialdomain. Automotive radar has always benefited significantly fromtechnological advances, especially in semiconductor technology.and packaging, allowing a better performance and much morefunctionality in the radar frontend. A second key area is theantenna system, where new concepts to acquire moreinformation about signals reflected from the environment cansignificantly improve resolution and detection performance.

WSF­5 Digitally Centric Modulation Schemes on aSoftware Defined Radar (SDR) PlatformAndreas Stelzer; Johannes Kepler University, LinzHighly integrated radar sensors are a trade­off of availablesemiconductor technology, analog bandwidth used, as well asbaseband functionality and signal processing capabilities. Basedon a software defined radar demonstrator digitally enhancedFMCW systems in combination with various modulation schemesfor TDMA­, CDMA­, FDMA­MIMO applications and multi­beam TXphased arrays, are discussed. Alternatives, e.g. OFDM modulationor PRN­based radar sensors with different coding schemes areshown, and a novel PRN­MIMO radar sensor is introduced.With CMOS technology nodes on one hand reaching the highradar frequencies, on the other hand fully digital­only modulationschemes and signal processing approaches are feasible. In theworkshop some approaches towards digital centric approaches interms of RF­hardware, modulation schemes, and evaluationprocedures are tackled, which means a paradigm shift in the RFdesign flow from the analog towards the digital domain.

WSF­6 Packaging Technology and Production Testing:Key Differentiators for Automotive Radar Front­End ProductsDr. Sergio Palma Pacheco; Freescale Semiconductor,Tempe, AZEver since the advent of the seat belt, safety has become a keydifferentiator in the automotive industry. This trend continuedwith airbags, anti­lock braking systems, and now with stabilitycontrol. Although these systems have been pervasive for the

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past 20 years, the number of accidents and fatalities in the UShas remained steady. The next step on the road towards greatersafety is the use of active sensing for collision avoidance. Thistalk will cover the development of mm­wave packagingtechnology and automated production testing capability as keydifferentiators in the industry. The main key features,challenges, and future trends for each will be presented; and howthese enablers impact automotive radar applications from anoverall system and business perspective.

WSF­7 How Can Semiconductor Technology and MMICPackaging Contribute to Future Success ofAutomotive Radar?Dr. Rudolph Lachner; Infineon AGToday’s market success of automotive radar systems is to a greatextend driven by technology. The development is characterizedby the transition from old school GaAs based, more or less ondiscrete millimeter wave design approaches and semi­automatedassembly to highly integrated Si­based SoC solutions andautomated PCB assembly with standard SMD components. TheSoC solutions have significant cost­down potential and offer highlevels of manufacturing maturity, yield, automotive quality overthe full temperature range and high­volume productioncapabilities, enabling broad market penetration of radar even inthe low priced car segments. In this talk, I will present state ofSiGe radar technology and its related packaging. Examples ofproducts will be given and directions and challenges of futureprocess developments will be outlined.

WSF­8 Antennas Concepts for Automotive RadarSensorsProf. Wolfgang Menzel; University of Ulm, GermanyThe choice automotive radar antennas is determined by therequirement for high gain and low loss combined with small sizeand depth, the challenges by the millimeter­wave frequencyrange, and great cost pressures. Consequently, planar antennasare dominating in the lower frequency range, while lens andreflector antennas had been the original choice at 76.5 GHz,partly in folded configurations, but today planar antennas arebeing introduced for the mm­wave range as well. With increasingrequirements towards a much more detailed observation of thescenery in front or around the vehicle, multi­beam antennas orscanning antennas have been designed, and solutions based on(digital) beamforming with a number of integrated antennas arein use or under development. This contribution will give a generalintroduction into antenna solutions forn automotive radar andpresent a number of realized solutions.

WSF­9 Millimeter­wave beamforming chips with built­in­self­test for low­cost radarsGabriel M. Rebeiz; University of California, San DiegoPhased­array chips with 8 to 16 channels and with transmit andreceive capabilities have been developed for low­cost mm­waveautomotive radars. One of the cost drivers in these chips is the S­parameter testing at W­band frequencies, and therefore, a newbuilt­in­self­test solution has been implemented which canaccurately measure the amplitude and phase of each channel,and measure an entire­chip phased­array pattern. The design andpackaging of these chips will be presented together withmeasured patterns with +/­50 scan angle and actual radarexamples.

WSG

Session: WSG Performance Metrics for mm­Wave Devices andCircuits from the Perspective of theInternational Technology Roadmap forSemiconductors (ITRS)

Chair: Dr. Herbert S. Bennett, NISTCo­Chair: Dr. Pete Zampardim RFMDAbstract:

o

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This workshop will focus on de­mystifying the ITRS RFand Analog/Mixed­Signal Technologies WorkingGroup's mm­wave device technology and circuitroadmapping activities. Device, circuit, andtechnology performance simulation, scaling, andexperimental characterization metrics and techniqueswill be addressed in detail for the most advancedCMOS, SiGe BiCMOS, III­V HBT and III­V HEMTtechnologies. Intrinsic device structure as well aslayout parasitics will be addressed as potential showstoppers to future scaling. The ever­increasing gapbetween the intrinsic high frequency performancemetrics of CMOS transistors and that of fully wiredMOSFETs, not seen in other device types, will beexplained.The workshop will end with an open discussion amongthe presenters and audience on how differenttechnologies compare to each other. Whatapplications will drive the mm­wave section of theITRS in the next 15 years? Will the Internet of Thingspose new technology performance requirements or isexisting technology more than adequate? Are FinFETsfaster than Ultra­thin Body and BOX SOI MOSFETs atthe same gate length and technology node? What isthe real gate length of 22nm and 14nm CMOStechnology and why gate length matters? Are theITRS metric tables accurately reflecting how thetechnology is going to perform in mm­wave circuits?Will all existing transistor technologies live and dietogether in the next ten years? Is there transistor lifebeyond 2­3nm physical dimensions? Which devicetype will scale to the highest fT and fMAX? Will mm­wave and THz SoCs be desirable and, if yes, feasibleat all or will these corresponding

WSG­1 Roadmaps and Standards for RF andAnalog/Mixed­SignalTechnologies: International Roadmap forSemiconductors PerspectivesHerbert S. Bennett; NIST, Gaithersburg, MD, USARoadmaps and standards with their associated measurementsare key to successful innovation and commercialization and jobcreation. Mobile devices such as today's smart phones andtablets are rapidly growing segments of the electronics industryand are creating more opportunities for increased growth. As aresponse to earlier market demands for RF dependent mobiledevices the ITRS established in 2001 its Working Group on RFand Analog/Mixed­Signal (RF and AMS) Technologies. Thispresentation includes: 1) a brief discussion on the history oftechnology roadmaps and a discussion on the roles thatinternational technology roadmaps and standards play inaccelerating the rates of innovation and commercialization ofselected technologies, 2) the ITRS process for establishing anindustrial consensus on priorities, technical requirements, anddifficult challenges, and 3) Why you should be interested in RFtechnology roadmaps and standards. The latter are invisiblecatalysts for efficient economies. Essential ingredients for qualitytechnology roadmaps and standards include sound science andengineering principles, reproducible measurements, manageablenumber of key processing characteristics and performancemetrics, and agreement among all stakeholders. Grandchallenges are sustaining effective communications, cooperation,and collaboration among stakeholders and understandinginterfaces well enough to control and reproduce performancefigures of merit in high volume manufacturing.

WSG­2 Scaling, modelling, and exploration of physicallimitations of SiGe HBTsProf. Michael Schroter; Technical University Dresgen, Germanyand UCSD, La Jolla, Ca, USAThe latest ITRS predictions for SiGe HBT technology have beenbased on combining the results of various one­, two­ and three­

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dimensional TCAD simulation tools with geometry scalablecompact modeling. This enables an accurate and consistentdetermination of all figures of merit for both devices and(benchmark) circuits. This presentation will discuss the overallprocedure and the assumptions made for generating thetransistor performance results found in the present ITRS tables.An extensive and consistent set of technology and electricalparameters is provided along with the obtained scaling rules.Finally, the expected fabrication related challenges and possiblesolutions for achieving the predicted performance data will bediscussed.

WSG­3 III­V HBT and (MOS) HEMT scalingProf. Mark Rodwell, University of California, CA, USAInP HBTs and HEMTs are today the widest­bandwidth transistors.InP HEMTs provide the lowest noise and the highest (~1.4THz)cutoff frequencies; InP HBTs have ~1.1THz cutoff frequencies,support moderate (~1000 HBT) integration scales, and offersuperior RF output power densities (~0.4W/mm at 220GHz,2.1W/mm at 86GHz). III­V LNAs and PAs are ubiquitous intoday's cellular telephones and Wi­Fi transceivers; similarly InPHEMT LNAs and HBT PAs will provide the needed noise figure,output power, and PAE in emerging ~50­500 GHz wirelesscommunications systems. We will present scaling laws androadmaps of these devices, and examine their scaling potentialto ~2­3 THz cutoff frequencies.

WSG­4 Nanoscale CMOS – an RF/mm­wave PerspectiveDr. Kenneth Yau; Broadcom, Irvine, CA, USAMoore's law has been dictating the scaling of the MOS transistorfor several decades. State­of­the­art CMOS technologiescurrently in production feature minimum gate lengths in tens ofnanometers and integration scales that can only be dreamt of nottoo long ago. With this aggressive scaling, the CMOS transistorhas attained current and power gain cut­off frequencies in excessof 300 GHz. RF and millimeter­wave LNA's, PA's and even entiretransceivers, which were traditionally the domain of III­Vtechnologies, have been successfully implemented in CMOS. Thispresentation will focus on the performance metrics of the nano­scale MOS transistor for RF and millimeter­wave applications.Extensive RF figures­of­merit such as Ft and Fmax and theirscaling from one technology node to another will be presented.Finally, technology related challenges will be surveyed andpossible solutions will be discussed.

WSG­5 State­of­the­art Millimeter­Wave III­V HEMTTechnologiesDr. Keisuke Shinohara; HRL Laboratories, Malibu, CA, USAMillimeter­wave InP and GaN­based HEMT device and MMICtechnologies will be reviewed. InP­HEMTs offer the lowest noisefigure and the highest maximum oscillation frequency exceeding1THz, demonstrating sub­millimeter­wave amplifier MMICs andlow­noise amplifiers with a low DC power consumption. Recentprogress of GaN­HEMT scaling technologies boosted its cutofffrequencies up to 500 GHz range while maintaining Johnson'sfigure­of­merit high breakdown performance. The emerging GaNtechnology enables high­efficiency millimeter­wave poweramplifiers, robust low­noise amplifiers with high input powersurvivability, and low­loss RF switches with high power handlingcapability.

WSG­6 55nm SiGe BiCMOS technology and beyond. Howaggressively can the CMOS be scaled?Dr. Pascal Chevalier; STMicroelectronics, Crolles, France55nm SiGe BiCMOS technology developed in STMicroelectronics300 mm wafer line will be presented. The technology featuresLow Power and General Purpose CMOS devices (triple gate oxide)and 0.45 µm² 6T­SRAM bit cell. 3 flavors of SiGe HBT with fTranging from 65 GHz to 320 GHz and fMAX from 270 GHz to 380GHz associated to BVCEO values between 1.5 V and 3.2 V areoffered. A 9 metal layers back­end of line combining theadvantages of being fully compatible with the existing 55 nmCMOS libraries and to provide enhanced performance formillimeter­wave passives (inductors, capacitors and transmissionlines) is available. Specific varactors dedicated to millimeter­wave applications are also proposed. Perspectives to use more

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advanced CMOS nodes (40nm and beyond) for next BiCMOSnodes will also be discussed.

WSG­7 mm­Wave RFCMOS TechnologyDr. David Harame; Global Foundries, USAAdvanced node RFCMOS is well suited for mmWave applicationsbecause of the high fT of the transistors and the features in thetechnology. An RFCMOS technology is typically compatible withthe base CMOS process so that libraries and IP may be leveragedin designs. Added features include passives such as varactors,capacitors including metal­oxide­metal fringe capacitors,inductors, and transmission lines using layers and processesfound in the base CMOS technology.Performance scaling of advanced node CMOS now requires theincorporation of local strain layers (usually nitride) and High KMetal Gate stack.The International Technology Roadmap for Semiconductorspredicts the trends in CMOS and other technologies. There is anRF subcommittee which has made predictions about the RFcharacteristics. This report summarizes some of thoseprojections. The methodology is to develop analytical expressionsfor RF figures of merit and predict RF performance trends basedon the base process characteristics. Comparing the ITRS and thefoundry data there are discrepancies. This is not surprising giventhe introduction of disruptive process innovations such as strain,layout variation, and computational lithographic design rules.This workshop talks about the trends and why there differencesbetween extending analytical expressions and actual foundrydata. The workshop concludes with a brief section on passives.

WSG­8 Beyond the Transistor. FET, HBT and FET­HBTmm­Wave Circuit Benchmarking and ScalingProf. Sorin P. Voinigescu; University of Toronto, CanadaThe presentation will first discuss the measurement, de­embedding and extrapolation techniques used to generate the HFfigures of merit in the ITRS tables. Exampels of nanoscale CMOS,FDSOI and SiGe HBT transistors and cascode stages measuredup to 325 GHz will be provided. Next, the choice of mm­waveand high­speed benchmark circuits will be addressed along withtheir predicted performance scaling based on large signalcompact models.

WSH

Session: WSH Nanopackaging: Multifunctional nanomaterialsand devices towards 3D system miniaturization

Chair: Dominique Baillargeat, XLIM UMR 7252CNRS/Université de Limoges

Co­Chair: Fabio Coccetti, CNRS­LAASAbstract: Future nanoelectronics technology will face many

challenges to match Moore and more than MoorePredictions. Going to nanometric dimensions needs toovercome limits due to physical phenomena,technological capabilities, packaging and assembly ofcircuits and system. (Nano)packaging is becoming amajor bottleneck and it will play a crucial role forenabling future nanoelectronics to be consistent withfuture components, system and circuit board (orglobal level) requirements. In this context, manychallenges have to be considered: development ofstate­of­the­art thermal and interconnect interfaces.development of new thermal and electrical nano­characterization techniques. development of predictivemodeling tools based on multi­disciplinary andadvanced multi­scales approaches, fabricating andtesting of representative demonstrators withsignificant impactThis WS will considered all this aspects. It isinherently interdisciplinary, and contributors arecomprised of experts in complementary research

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fields and will present intensive researchinvestigations focused on carbon nano­tubes,graphen, 2D materials, nanowires, etc. dedicated to3D system integration and miniaturization.

WSH­1 Carbon based 3D interconnect technologyJohan Liu ; Yifeng Fu ; Di Jiang ; Shuangxi Sun ; Jie Bao andNing Wang ; Department of Microtechnology and Nanoscience,Chalmers University of Technology, Sweden, SMIT Center,School of Automation and Mechacnical Engineering and KeyLaboratory of New Displays and System Integration, ShanghaiUniversity, 3SHT Smart High Tech AB, Gothenburg, SwedenCarbon Nanotubes (CNTs) have excellent electrical, thermal andmechanical properties. They are mechanically strong atnanoscale yet also flexible if made micro­ or milli­meter long.They are synthesized from nano­sized catalyst particles and canbe made up to millimeters. A lot of research studies have beenspent on various properties of the CNTs. They are regarded as analternative material in a lot of applications such as ICs, MEMS,sensors, biomedical and other composite materials, etc. Amongthem, the thermally grown CNTs using chemical vapor depositionmethod is of particular interested in electronics applications as a3D interconnect material. Within this talk, growth and post­growth processing of CNTs are covered and tailoring of CNTsproperties, i.e. electrical resistivity, thermal conductivity andstrength, etc., is discussed. To make the electronics systemssmaller, faster and more power efficient, CNTs as a potential newmaterial are likely to provide the solution for these futurechallenges.

WSH­2 Micro­Nano interposer for Molecular electronicsand 3D integrated circuitsP. Reynaud; A. Thuaire; X. Baillin; S. Cheramy; G. Poupon; CEALéti, Grenoble – FranceAs molecular electronics is getting more and more explored, itbecomes necessary to find appropriate nanopackaging solutions.A micro­nano interposer based on silicon nanotechnology is thusdeveloped to allow connection between a molecular circuit andmesoscopic electrodes. This interposer includes nano­to­microscale interconnections and high density "trough silicon via" (TSV)for 3D integrated circuits.

WSH­3 High Frequency Models for Multilayer GrapheneInterconnectsV. Kumar ; Shaloo Rakheja ; and Azad Naeemi ; GeorgiaInstitute of Technology, MITIn this talk, a unified approach in capturing quantum mechanicaland electromagnetic phenomena will be used to model signaltransport in multilayer graphene interconnects. The models willbe used to quantify the potential performance of grapheneinterconnects as possible replacements for copper interconnectsin digital and RF applications.

WSH­4 RF Nano Electromechanical Systems (RF NEMS)Based on Vertically Aligned Carbon NanotubesA.Ziaei, S. Xavier; Thales R&T, FranceWe demonstrate a reproducible carbon nanotubes basedtechnology for switching applications (RF NEMS). The finalobjective is to demonstrate a CNT based switching deviceworking in the range 1­80GHz and fulfilling very demandingrequirements: low losses, high isolation, a switching time below0.1μs, an operation voltage below 30V and high power handlingcapabilities.

WSH­5 Carbon nanostructures based RF nanopackaging.Application to 3D interconnectD. Baillargeat1; S. Bila ; P. Coquet ; B.K. Tay ; XLIM UMR7252 CNRS/University of Limoges, CINTRA UMI 3288CNRS/NTU/Thales, Singapore, SEEE NTU, SingaporeAssembly approaches are moving toward the system­levelintegration paradigm and new packaging technologies areproposed such as 3D system integration, wafer­level packaging,or electro/optical integration. During the last past years, newapproaches have been studied. They consist in the use of new

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nanomaterials in packaging such as carbon nanotubes (CNTs),nanowires, nanoparticules and graphene.In this work, we mainly focus on the use of CNTs applied to highfrequency interconnect. They are studied and revealed uniquephysical, electrical and thermal properties, which make themextremely attractive for many applications in the area ofnanoelectronics.In order to help component design, two modeling approaches areproposed: one is based on mesoscopic model for theelectromagnetic properties of arrays of nanotubes, the other oneon circuit simulation for RF applications. All of them areconsidering the quantum effects of the CNTs.Several test structures are considered such as flip­chip reportbased on CNTs bumps and wireless interconnect based on CNTsmonopole. Experimental works are conducted with success. Theyvalidate theoretical approaches and specific processes.

WSH­6 Advanced numerical tools for the multiscale­multiphyiscs modelling of carbon­basedinterconnectionsL. Pierantoni ; D. Mencarelli ; F. Coccetti ; Università Polietcnicadelle Marche, LAAS­CNRS FranceFull­wave multiphysics techniques aimed at the investigation ofthe combined electromagnetic­coherent transport phenomena incarbon­based nano­structures/devices have been recentlyintroduced. The quantum transport is modeled by i) discreteHamiltonians at atomistic scale, ii) Schrödinger equation, and/orDirac/Dirac­like eqs. at continuous level. In this work, we willanalyze: i) electromagnetic­quantum transport modelling andsimulation of CNTs interconnections with TS , providing RFequivalent circuits, ii) many­terminal graphene nanoribbon(GNR) circuits, Y­ and T­ GNR junctions. Moroever, a newinterconnection concept is presented. This consists of aresonating wire antenna, radiating very closely to a graphenepatch, thus inducing plasmon propagation. In particular, weconsider a suspended graphene structure, in order to i)emphasize the intrinsic properties of the material, ii) the changesof propagation characteristics due to a dielectric substrate. Thenumerical computation is achieved by means of a dedicated MoMtechnique, and, for comparison, is tentatively addressed bystandard full­wave simulators. The proposed configuration is notmuch dissimilar to use an STM (Scanning Tunneling Microscopy)probe for near field microwave microscopy: in fact, the STM tipcan be modeled by a filiform antenna protruding, for instance,from a coaxial feed.

WSI

Session: WSI MmW to THz, which Applications with whichTechnology

Chair: Didier Belot, CEA LetiCo­Chair: Pierre Busson, ST MicroelectronicsAbstract: Millimeter Waves applications are becoming more and

more used for civil markets in the infrastructures,automotive, mobile devices connectivity, and imagingdomains while THz applications remain manly in themilitary domain, even if we can notice tentative forcivil security and health imaging domain. TheWorkshop is organized in three levels of complexity: ina first time in order to target applications mentionedabove, process technologies has to be defined, and wewill have presentations covering SiGe and III­Vprocesses; then we will address modeling issues formillimeter waves and THz frequencies, before havingan overview on different design techniques in SiGe andIII­V processes addressing mmW and THz applications.At the end of the day, we will have an open door onindustrial systems and applications opportunities inTelecommunications infrastructures, mobile devicesand connectivity.

WSI­1 SiGe Technologies for mmW and THz applications

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SiGe Technologies for mmW and THz applicationsPascal Chevalier; ST MicroelectronicsSiGe BiCMOS technologies in production today addressapplications such as 77 GHz automotive radar or 100 Gb/s opticalcommunications. They exhibit ~200 GHz fT / ~300 GHz fMAXSiGe HBTs, high­Q millimeter­wave passives and 0.18­µm to0.13­µm CMOS. Next generations in development today offerSiGe HBTs featuring ~300 GHz fT and fMAX up to 500 GHz,embedded in 55­nm CMOS for the most advanced one. They willimprove the performance of current applications but will also pavethe way for new low­cost applications above 100 GHz. The talkwill review the BiCMOS developments carried out inSTMicroelectronics. The vertical and the lateral scaling of the SiGeHBT will be discussed and the outcome of these studies, withrespect to the HF performances (fT, fMAX, noise, power), will bepresented. Last 0.13­µm and 55­nm BiCMOS platforms(respectively BiCMOS9MW and BiCMOS055) fromSTMicroelectronics will be presented.

WSI­2 III­V Technologies for mmW and THzapplicationsMohamed Zaknoune; IEMN Lille, FranceThe increasing demand in the market in terms of data rate,speed, mobile devices has created a competition between devicetechnologies. The demand in terms of low noise amplification,power amplification and power generation in the millimeter andsub­millimeter waves range i.e. 100 GHz−1THz is becoming moreand more crucial. For these very high frequency applications, III­V transistors such as the Double Heterojunction Bipolar Transistor(DHBT) and the High Electron mobility Transistor (HEMT) or THzphotomixer such as Uni­Traveling­Carrier­Photodiode (UTC) arethe inevitable devices. During this last decade, immense effortshave been undertaken to push their performances at the limit,and sometimes beyond, of the THz. It will be shown in whichways these performances have been obtained on III­Vsemiconductors. These different ways include epitaxial design,scaling, interfaces, ohmic contacts.

WSI­3 RF front­ends for mm­Wave and THz applicationin SiGe/CMOSUlrich Pfeiffer; University of WuppertalThis workshop will present an overview of silicon­based RF front­ends for imaging, radar, and communication applicationsoperating close to and beyond the THz­gap. The presentation willfocus on heterodyne and direct detection techniques including adiscussion about the available device technologies and theachievable bandwidth and sensitivity. Heterodyne examplesinclude wideband IQ transmitter and receiver front­ends at 240GHz for data transmission towards 100 Gbit/s, a circular polarizedradar transceiver chip at 240 GHz with a range resolution of 3.65mm, and a THz multi­color imager up to 1 THz. Finally, incoherentSiGe sources with 0dBm up to 1/2 THz and THz video cameras inCMOS and SiGe process technologies operating up to 4THz arediscussed.

WSI­4 Multifunctional Circuits and Modules Based onIII/V mHEMT Technology for (Sub­)Millimeter­Wave Applications in Space, Communication andSensingMichael Schlechtweg; Fraunhofer InstituteThe transmission of electromagnetic waves in the atmospherefeatures local maxima in the distinguished frequency bandsaround 94, 140, 220, 340, 410, 480, 660, and 850 GHz, makingthem especially attractive for millimeter­wave high­speed datalinks and long­distance high­resolution radar and imagingsystems. High operating frequencies allow for precise geometricalresolution due to high absolute bandwidth and small wavelength.It also reduces the size of components and antennas,predestining them for lightweight airborne systems, e.g. inunmanned aerial vehicles (UAVs). In comparison to visible andinfrared radiation, a particular benefit of millimeter­waves forimaging and sensing applications is the penetration of dust, fog,rain, snow, and textiles.The workshop presentation covers a broad variety of MMICs andmodules developed at the Fraunhofer IAF for manifoldapplications in the frequency range up to 600 GHz and above,using the advanced metamorphic high electron mobility transistor(mHEMT) technology based on the InGaAs/InAlAs material system

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on 4" GaAs substrates. To achieve very high MMIC operatingfrequencies, the transit frequency of transistors was boosted toover 600 GHz by increasing the indium content in the transistorchannel up to 100 % and reducing the gate length to 20 nm. Thepresented MMICs act as key components in wirelesscommunication systems (radio links, mobile communication,satellite transmission), sensor systems (collision avoidance radar,atmospheric sensors, non­destructive materials testing), radioastronomic sensors (cryogenic ultra­low­noise amplifiers), and inmilitary engineering (high­resolution radar, passive imaging ofthe environment).The presentation will specifically address a variety of high­performance MMICs, such as ultra­low­noise amplifiers mixers,oscillators, switches, frequency dividers, frequency multipliers,transmitters, receivers, as well as complete transmit/receive andradar circuits. Different approaches for module packaging andsystem realization will be also covered. As an example,multifunctional transmitter and receiver chip sets for millimeter­wave high­speed data links and active imaging systems up to 350GHz will be discussed.

WSI­5 Towards the integration of millimeter waveaccess points in future 5G heterogeneousnetworks: stakes, challenges, and key enablingtechnologiesCedric Dehos; CEA Leti The exponential increase of mobile data traffic, driven bysmartphone and tablets, requires disrupting approaches in thedefinition of the future 5G network. The trend is to reduce the cellsize and offload a great part of this traffic to small cell accesspoints, optically or wirelessly linked together and backhauled tothe core network. In this scope the huge frequency bandsavailable at millimeter wave should be good candidates foropportunistic high data rate data transfer.Within this talk, an heterogeneous network infrastructure isproposed based on the superimposing of millimeter wave accesspoint and backhaul to the former cellular infrastructure. The latestbreakthrough in CMOS and BiCMOS technologies and in industrialpackaging are pointed out as starting point for the systemdefinition and feasibility study of such mmw devices at low cost. Afocus is next made on the access point architecture and design,through the framework of the H2020 Miwaves project. At leastthe technical, sociological, and economical challenge of such ammw deployment is also emphasized and tackled.

WSI­6 Indoor WiGig and 802­11.ad WiFi ConvergenceapplicationsAli Sadri; Reza Arefi; Joongheon Kim;IntelIncreasing the capacity of cellular networks is becoming one ofthe most challenging tasks of the mobile industry this decade. Astraditional mechanisms to increase spectral efficiency approachtheir theoretical limits, new and disruptive techniques are neededto satisfy the growing demand of mobile data traffic. Whileconsiderable focus has been rightfully put into exploiting licensedfrequency bands below 6 GHz, the vast amount of licensedfrequency spectrum in millimeter wave (mmWave) bands hasseen little use by cellular systems despite holding far greaterpotential for enhancing capacity. Besides mobile cellular access,backhaul access technologies actively utilize mmWave frequencybands to satisfy multi­gigabit/s data rate requirements. In thispaper we introduce our novel architecture for mmWave capablemobile cellular and backhaul access technologies with modularantenna arrays. This architecture makes use of various networkRF components including combined with the use of mmWavebased technologies for the backhaul, fronthaul and mobile cellularaccess. We show that our mmWave RF systems can significantlyincrease capacity and density for next generation backhaul andmobile cellular access systems.

WSI­7 Silicon mmW and THz ApplicationsAli Hajimiri; CalTechOver the last decade, there has been an explosion of newlyreported result in the areas of integrated mm­wave and THzsignal generation and detection. These new frequencies ofoperation enable a large number of new applications andarchitectures. In this talk, we will focus on several newly enablesolution to such system, such as novel on­chip multi­port driven

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radiators, dynamic polarization control of the radiated signals,and integrated electro­optical signal generation solutions. We willdiscuss the underlying theme behind all these approaches and thefuture potential of such systems through several practicalexamples.

WSI­8 Coherent THz frequency synthesis in Silicontechnologies: design challenges and impacts.Alexandre Siligaris; CEA LetiSub­mmW frequency band is gaining an increased interest amongthe scientific community for RF system development. Indeed,within the J­band (220­325 GHz) a large spectrum is availablewhere various applications are developed like short range radar,THz imaging, chip­to­chip high throughput communications orbackhaul communications. Such systems are mostly based onheterodyne or super­heterodyne architecture in which a stableand low phase­noise local oscillator must provide a referencefrequency for up and down conversion. Lots of work has beenrecently published on local oscillators operating around 300 GHz.However, either the oscillators are not included in PLLs, or theirPLLs operate at high frequency, which is constraining in terms ofdesign, performance and power consumption.Here we present some architecture and design approaches thathelp to implement very high frequency synthesizers with lowphase noise and optimal power consumption in Silicontechnologies. The design challenges are identified and treated.Some examples of implemented circuits are detailed and theimpact of phase noise is shown on THz images performed withheterodyne receivers.

WSJ

Session: WSJ Modern radar systems for high resolutionranging, indoor localization, and vital signsdetection

Chair: Aly E. Fathy, University of Tennessee, Knoxville Co­Chair: Jenshan Lin, University of Florida Abstract: In recent few years, radar has evolved from an

important military utility to popular solution forautomobile collision avoidance, indoor localization,noncontact health monitoring, and motiondetection/control. Both the industry and academia areworking diligently in making radar portable intelligentdevices for civilian applications closely related tohuman life. This workshop presents some of the recentdevelopments on ultra­wideband (UWB), Doppler,frequency­modulated continuous­wave (FMCW), andinjection­locking radars for biomedical and localizationapplications. The technologies presented operate in abroad frequency range from a few hundreds of MHz toabove 200 GHz, with detection range from a few mmsto hundreds of meters and range resolution as high asμm­scale. Special emphasis of this workshop isdedicated to hardware solutions at both the circuit andsystem levels. Low­power, low cost, highsensitivity/resolution, and smart control are some ofthe distinguished themes that make the presentedradar a brand new concept compared with that inseveral decades ago.

WSJ­1 Resolution and Precision in Vital­Sign­MonitoringLFMCW RadarsRoberto Gomez­Gacia; José­María Muñoz­Ferreras; University ofAlcala, SpainRadars have demonstrated to be interesting equipments for non­military indoor applications. In particular, the detection andtracking of vital signs (e.g., respiration and heartbeats) arehighly­appealing tasks for healthcare scenarios. Furthermore,these short­range radar systems can also be applied to detect the

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presence of people after the occurrence of catastrophes, such assnow avalanches or earthquakes.The radars based on coherent linear­frequency­modulatedcontinuous­wave (LFMCW) signals have emerged as low­costsystems with unique features, such as the combination of highrange resolution and tracking precision. These inexpensivesystems are based on the so­called deramping technique, whichenables the simplification of the acquisition block, which canemploy a low­end Analog­to­Digital Converter (ADC) with a smallsampling frequency.In this lecture, the main features of an LFMCW radar formonitoring of vital signs are briefly expounded. Special emphasisis made on the concepts of range resolution and precision, whichusually lead to confusion. Range resolution is related to the abilityof the radar to discriminate between different targets located atclose ranges, whereas range precision is the ability of the radar tomark the absolute range position of an isolated target. A finerrange resolution only requires a larger instantaneous transmittedbandwidth, whereas a better precision implies a higher signal­to­noise ratio (SNR).Simulations and experimental results coming from moving metalplates and breathing subjects allow to emphasize the mainaspects of this lecture.

WSJ­2 Review of Non­Contact Measurements of VitalSigns using Various Types of Radars andAlgorithmsAly E Fathy ; Lingyun Ren ; Krishna Naishadham ; Jean E. Piou ;Paul Theilmann ; University of Tennessee, Knoxville, TN, USA,Georgia Institute of Technology, Atlanta, GA, USA. MIT LincolnLaboratory, Lexington, MA, USA, MaXentric Technologies, SanDiego, CA, USA.Cardiac and respiratory motion of the chest cavity, crucial to vitalsign detection. We have developed different types of radarsincluding UWB and Stepped Frequency Continuous Wave (SFCW)radar to remotely detect both. Previous attempts were successfulin detecting respiration rate but had problems in accuratelyidentifying heart rate due to its low amplitude, presence onharmonics and intermodulation components. We have beenworking on developing new algorithms to accurately extractcardiac and respiration rates. The method has been applied tovarious radar measurements on a sedentary object withoutproducing harmonics and inter­modulation products that plaguesignal resolution in commonly used auto­ correlated FFTspectrograms relying on peak detection, and its results are veryencouraging. Emphasis will be on UWB radar for its capability totrack more than one person.

WSJ­3 RFIC integration of CW radar transceivers forvibration and vital sign detectionChangzhi Li ; Jenshan Lin ; Texas Tech University, USA, University of Florida, USAThis presentation reviews the development of continuous­wave(CW) non­contact motion sensor chips for vibration and vital signdetection. The first chip was developed at Bell Labs during 2000­2002. The research that led to this first demonstration isdescribed. Since then, several different approaches have beentaken to improve the performance and to explore potentialmilitary and commercial applications. Different radar architectureshave been employed in CMOS RF system­on­chip from a few GHzto millimeter­wave frequencies. The non­contact sensor chips thatcan detect physiological motions of humans and animals from adistance away will find a variety of applications includinghealthcare, security, emergency response, etc. A few examples ofapplications and their potential impacts to our society arediscussed.

WSJ­4 Doppler Radar for Sleep MedicineVictor Lubecke; Olga Boric­Lubecke; University of Hawaii, USAObstructive Sleep Apnea (OSA) is a common sleep disorder,estimated to affect over 40 million US patients. Accuratescreening and diagnosis is necessary to lessen the burden of thisdisorder on patients, their families, and the community. Thecurrent gold standard for diagnosis of OSA uses conventionalsensors that contact the patient. These contacts and theirassociated wires negatively impact the patient's quality of sleep.New non­contact physiologic radar monitoring is emerging, which

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allows for unique non­invasive wireless monitoring of some of theclassic sleep variables. Such systems measure respiration andheart rate, chest wall and abdominal motion, and patient activity,and provide diagnostic analysis. A discussion of the utility ofDoppler radar measurements in sleep medicine will be presented,including the development of effective automated indicatorssensitive to indications of apnea and hypopnea events.

WSJ­5 Development of a Low Power UWB Radarinterface for Sensor NodesDieter Genschow; Innovations for High PerformanceMicroelectronics, GermanyThe key element of the commonly proclamated age of internet ofthings are small computing entities that interface the physicalworld to the digitally connected world. The spectrum of physicalphenomena of interest is broad, but a very common application isto sense some sort of motion, distance, frequency, vibration orother forms of displacement. Radar sensors have become widelyused in that area in the recent years, because of their numerousadvantages over technologies like light barriers, PIR sensors,ultrasonic transducers and video cameras.Unfortunately, problems still arise when Radar sensors shall beconnected to battery supplied sensor nodes. Power consumptionof current radar devices is much too high for small batterypowered devices if higher update rates are needed. (FM)CWsensors have low requirements on the analog to digitalconversion but need to transmit for long time intervals, whichincreases average power consumption.Pulse or UWBRadars need little energy to transmit a signal but pose very highdemands on the conversion from time to digital domain, whichdramatically increases power consumption. This is especially truefor devices that sense short distances i.e. have extremely smallround trip times.Impulse Radio Radars with small power requirements exist butthey have very low update rates and need a lot of processingbetween samples.This talk presents a novel low power interface architecture tomeasure round trip times in the range from nanoseconds tomilliseconds with picosecond resolution. The goal of thisdevelopment is an interface that connects pulsed sensors withtime­coded information (UWB,Impulse Radio, LIDAR orUltrasonic) to low power microcontrollers with slow clock rates,ADC and little processing power. The current state ofdevelopment will be shown and pro's and con's of the system willbe discussed.

WSJ­6 Wireless Indoor Positioning Systems based onRadar TechnologyChia­Chan Chang; National Chung­Cheng University, TaiwanNumerous applications require the ability to localize/track humansubjects either for security or safety issues. Examples includedisaster search­and­rescue, law enforcement, urban warfare, andmore recently elderly care in nursing homes or living householdsdue to the rapid increase of the global aging population.This presentation discusses a series of 2­D indoor positioningsystems developed by our group using various types of radartechnique and algorithms. The first continuous­wave positioningsystem is composed of two phased antenna arrays, while thehuman target position is determined based on the AoA algorithm.The FMCW technique is later applied in the second system tofurther give the range information. In both systems, the usersneed to carry an active tag to communicate with tracking readers.As a last discussion, a tag­free 2­D wireless positioning systemwill be introduced, where the human presence is based on thedetection of the respiratory signals.

WSJ­7 Indoor Vital­Sign and Gesture Sensors UsingWiFi Passive Transponder TechnologyTzyy­Sheng Horng; National Sun Yat­Sen University, TaiwanThis presentation demonstrates a passive transponder to detecthuman vital signs and gestures with WiFi signals in an indoorenvironment. The proposed transponder does not contain atransmitting source inside the transponder. Instead, thetransponder captures WiFi signals produced by an access pointand utilizes those signals to perform vital­sign monitoring andgesture sensing according to Doppler effects. The range of

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detection depends on the various standards of WiFi including802.11 b/g/n, and will be discussed intensively in the Workshop.

WSJ­8 Millimeter Wave Radar Imaging for Security andIndustrial ApplicationsNils Pohl; Dirk Nüßler; Fraunhofer FHR, GermanyNowadays, modern semiconductor technologies allow to highly­integrate multi­channel Radar sensors in the mmWave regime atmoderate cost level, which enables imaging sensors intransmission or reflection setups. Therefore, a new technology forobject detection and material classification in industrial processenvironments (in­line), as well as for security purposes is aroundthe corner. Due to the demands for high spatial resolution,frequencies around 100 GHz and even higher are mandatory,which is still a challenging task for cost­efficient technologies.This contribution addresses the underlying circuit technologies aswell as the application environments. On circuit level, sensorconcepts up to 240 GHz for radar operation will be presented andfinally various application examples of microwave imaging forsolving real problems in the field of plastic recycling, securityenvelope scanning and in inline production environments will begiven.

WSJ­9 Wireless Radar Sensor Networks for Real­TimeHealth MonitoringDominique Schreurs; Katholieke Universiteit (KU) Leuven,BelgiumRadar technologies are emerging for health monitoring at home.The possibility of characterizing speed and distance in acontactless way opens up a range of practical applications,allowing elderly to reside longer in their familiar environment.Research has been focusing at first at single radar solutionstargeting mainly vital signs monitoring and detection of falls. Toincrease flexibility and to overcome obstructions such asfurniture, recent developments evolve towards wireless radarsensor networks. In this presentation, an overview on the state­of­art will be provided, highlighting the challenges to overcomewhen combining wireless communications with multi­functionalradar sensing, while guaranteeing real­time data analysis results.

WSJ­10 Introduction in High­Resolution and Ultra­LowPower Distance Measurements by MicrowaveInterferometryAlexander Koelpin; University of Erlangen­Nuremberg, GermanyMany civilian measurement applications can be realized bymicrowave interferometry. This radar architecture features lowhardware and software complexity and can be optimized forhighest distance resolutions in the micrometer regime combinedwith a measurement value update rate of several kilohertz orultra­low power operation for, e.g., presence detection. Bothapproaches will be discussed in this talk. After introducing thebasic technology and dependencies a detailed introduction to realhardware building blocks for the K band will be given. Also non­ideal effects and approaches for calibrating the system will begiven. The talk will close with real world applications spreadingfrom simple presence detection to precise distancemeasurements, vibration analysis and frequency determination.

WSK

Session: WSK RF system miniaturization with Integrated­passive­Device (IPD), Through­silicon­via (TSV),and System­in­Package (SiP) Technologies

Chair: Feng Ling, Xpeedic Technology, Inc.Co­Chair: Nozad Karim, AmkorAbstract: Designing multiband, multimode mobile devices poses

a great challenge to RF designers. RF front end mustmove away from the traditional discrete analogcomponent chains to highly integrated one, which notonly provides reduced power consumption andimproved radio performance while keeping smallerfootprint, but also makes the system design moresimplified and cost­effective. Integrated passive

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device (IPD), through silicon via (TSV), and system inpackage (SiP) have become the key enablingtechnologies. IPD allows the discrete passivecomponents around the transceiver to be integratedinto blocks, which can be further integrated withactive ICs into a system­in­package. TSV can beincorporated with IPD to provide better flexibility andform factor. The workshop assembles a group of wellrecognized experts covering the entire RF ecosystemfrom IPD/TSV/Package foundries, design houses, toEDA tool vendors, to share with the attendees theirapproach for RF front end miniaturization.

WSK­1 Overview of IPD Applications in RF Front EndModule DesignsWeimin Sun and Hilal Ezzeddine ; Skyworks Solutions,Inc., STMicroelectronicsThe Integrated passive device (IPD) has seen increasing use inRF and wireless Front­End Module (FEM) and other System­in­Package (SiP) designs. The IPD process is different than commonSi CMOS processes in order to facilitate high­Q for passivedevices, but can leverage state of the art Si IC processtechnologies. More importantly, IPD can allow more compact and3D designs in RF modules with comparable performance, bettertolerance and lower cost than traditional discrete designs. In thispresentation, we will review and compare several available IPDprocesses which have been used in RFIC module applications.Such RF applications include but are not limited to filters,couplers, baluns, transformers, impedance matching networksand power combiners. In addition, we will discuss practical IPDdesign flows and techniques, in particular, EM design tools thatcan be effectively integrated into design flows to optimize thedesign and reduce design cycle time. It has been seen that thegeneral correlation between EM enabled IPD design simulationand RF measurement is excellent. In the end, we will present anddiscuss several IPD design and simulation examples in RF FEMapplications.

WSK­2 RF IPD Design for Vertical Integration inWireless SystemsKim Eilert; Charles Hoggatt; Ki Shin; Neal Mellen; ONSemiconductorThin film Integrated Passive Device (IPD) technologies have longoffered a miniaturized alternative to traditional discrete andceramic solutions. With the advantage that precision processingand low­profile form factor offer, copper on silicon wafer basedIPD in particular results in good performance at comparativelylow cost. This technology, especially with high­performance thickcopper, has been adopted by the market and is visible today inmany cellphones as RF filters and matching networks.The development of Through Silicon Via (TSV) processingcapability adds a new dimension to the existing IPD processsuite. While 2.5D interposer products are desirable in numerousapplications, the synergy of TSV and IPD enables true 3Dinterposers with RF functionality. This talk will examine theimplications of TSV + IPD, and examine new design possibilitiesas well as the benefits and challenges of vertical integration.

WSK­3 RF System­in­Package using IPD Made on SiliconSubstrateKai Liu; STATS ChipPACMobile applications require electronic devices made in smallform­factor and low profile, and Moore's law has been witnessedin successful adoptions of finer and finer semiconductor featuresfor such applications. However, most advances of using advancedsilicon node are mainly for active devices. Passive devices do notfollow Moore's law and still undergo size and performance trade­off battles. In an RF package, 70%­80% area is occupied bypassive devices, such as discrete RCL components, functionalblocks (filter, balun, matching, etc). Therefore, reduction of thearea for passive devices makes a vital impact on overall packagesize. Integrated Passive Device (IPD) made from silicon processhas unique features, such as less process­variation (thereforebetter yield), smaller form­factor and lower profile. However tomake IPD really work with size constrains, careful IPD designs

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through sophisticated skills are needed in order to achieve goodelectrical performance. These designs often take into account ofimpact from packaging environment where these IPDs are to beused, which is sometimes called IPD (die) and package co­design. In this workshop, several application cases are providedto demonstrate how to meet size and performance specificationsrequired for respective wireless applications.

WSK­4 SiP Packaging Solutions for System Integrationand MiniaturizationNozad Karim; Amkor TechnologySystem integration is driving and influencing performanceimprovements, miniaturization, and cost reduction in newelectronic products. Device and package design is expanding toincorporate a variety of design and manufacturing methods toachieve size reduction and increase circuit functionality within aSystem­in­Package (SiP) platform.A System­in­Package is primarily comprised of severalsubsystems performing different functions. System andsubsystem integration within a package can take advantage offlexible and compact component placement, isolationrequirements, and short interconnection pathways. Advanced andmature technologies are combined to leverage placement ofIntegrated Passive Devices (IPD) and embedded active andpassive devices placed in a substrate. Through Silicon Vias (TSV),stacked and side­by­side devices can be connected by flip chip,wire bond or a combination of both technologies. Isolation in theform of conformal shielding, compartmental shielding, or doublesided assembly is available. Creative designs are used to producecompetitive packaging solutions.Functional blocks such as impedance matching, filters, balunsand other circuits can be realized by IPD technology on silicon orglass. Embedded active and passive components in a substrateallow additional package miniaturization by moving active devicesand passive components from the top and bottom layers of thesubstrate to the core of the substrate. Embedded technology in asubstrate exhibits good electrical and thermal behaviors. Mobile,IoT and wearable electronics require operating at multiplefrequencies at different frequency bands. Operation at multiplefrequencies within a band can create intermodulation andharmonics which produce electromagnetic interference impactingSiP performance and the surrounding electronic circuits.Shielding becomes essential to protect the system fromdegradation. Sputter shielding is one solution used to controlelectromagnetic radiation and susceptibility.Proven SiP design methodology and manufacturing know howguarantees a system integration solution by using a mixture ofdiverse technologies that have already been demonstrated inmass production.

WSK­5 Design Methodology for Efficient IPDDesigning/PrototypingFeng Ling; Xpeedic Technology, Inc.Demand for mobile communication and instant access toinformation has driven the growth of the portable devices atunprecedented speed. RF front end must move away from thetraditional discrete analog component chains to highly integratedone, which not only provides reduced power consumption andimproved radio performance while keeping smaller footprint, butalso makes the system design more simplified and cost­effective.Silicon based integrated passive device (IPD) allows the discretepassive components around the transceiver to be integrated intoblocks. Furthermore, IPD can be integrated with active ICs into asystem­in­package (SiP) to make the system more integrated.This approach has tremendous application potential because ofits advantages such as heterogeneous functional integration,miniaturization, performance, cost, flexibility, and testability.However, such a complicated system poses a great challenges tothe existing design flow which is more adaptive to the systemwith discrete components. New design methodology and flow hasto be developed to help to reduce the design iterations andachieve the first pass success. In the talk, such design flow withfocus on pre­layout schematic level synthesis, post­layout fastEM modeling and simulation, fast tuning, and IC­package co­simulation will be presented with several application examples.

WSK­6 Design Challenges: Embedding bare die anddiscrete devices in a system in package (SiP)

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P. Viklund; C. Pfeil and R. Myers; Mentor Graphics Corp., Skurup,SwedenAn advanced process called Embedded Component Package(ECP®) has been developed by AT&S, which allows embeddingbare die and discrete passives into the core of a packagesubstrate. Components are attached with an adhesive andconnectivity is established by plating feedthrus (vias) that spanthe signal layers to die pins. This solder­less process can beapplied to create advanced system in packages (SiP).This technology provides a number of benefits such asminiaturization, improved electrical performance and thermalmanagement, improved reliability and mechanical stability, andcost­efficiency; however, it presents significant challenges to thedesign process and for the creation and management of newdata.Embedding active components in the core of an organic substrateis an unusual method for SiP assembly and fabrication. AT&S hasworked with Mentor Graphics to develop a streamlined designworkflow, which includes a suite of integrated software tools thatsignificantly improve the time to completion, and properlyrepresent the components for design, simulation, assembly andfabrication.The design consists of embedded PMIC and LDD array die alongwith a set of capacitors embedded in the substrate core. TheLogic and Memory chips are mounted on the top surface of thesubstrate as stacked die using wire bond attachment along with aflip­chip device. The SiP is integrated on a 366­pin ball grid arrayplatform.

WSK­7 RF system SIP integration: how to enhancesignal integrity concerns by use of high valueSiCaps with ultra low ESLO. Gaborieau; M. Heise; IPDiA, Caen, FranceSiCaps inherently have low ESL values and by use of IPDiA'sunique trench cap technology optimized for even lowerinductance the design engineer can now chose cap values of nFand even low uF to facilitate decoupling function inside the SIP.The silicon die can be laid out to accommodate multiple capvalues and even include resistance values of up to some mOhms.Having designed a SiCap die for integration into your SIP it canof course be attached with wirebonds or alternatively bumpedwith or without copper pillars and outfitted even with throughsilicon vias for ease of integration. The availability of ultra lowprofile of these SiCap dies ranging between and minimum of 30to 80 micrometers and an identical CTE­match with the activedies facilitate size reductions further.

WSL

Session: WSL Wearable Electronics with MicrowavesChair: Debabani Choudhury, Intel CorporationCo­Chair: J.­C. Chiao, UT ArlingtonAbstract: Wearable electronics utilizing RF and microwave

technologies are emerging quickly in wide ranges ofapplications in medicine, consumer electronics,gaming, ecology monitoring, social networking, smarttransportation, environment and weather monitoring,automatic manufacturing and safety/security.Examples include continuous non­invasive vital­signalmeasurements, wireless positioning and localization,implantable and wearable devices for in vivo and exvivo monitoring of human physiological conditions,remotely­located sensors and omnipresent sensors forInternet of Things. Presentations from eight experts inthis workshop discuss the state­of­the­art status,technical challenges in designs, fabrication andimplementation, and emerging applications/markets ofwearable electronics that enabled by RF andmicrowave technologies. The goal of this workshop isto facilitate interaction among attendees and inspireinnovative ideas.

9/26/2016 IMS2015 | IEEE International Microwave Symposium | Sunday Workshop Descriptions

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WSL­1 Wearable Devices utilizing MicrowavesJ.­C. Chiao; University of Texas at ArlingtonWireless communication has created a fundamental change in ourdaily lives owing to the convenience, affordability and networkingcapability. Emerging technologies further enhance the capabilityinto applications for sensing, monitoring and even therapeutictreatment. Wearable devices, either for human uses ormonitoring environments, utilizing microwaves for theseapplications face new technical challenges in designs, materials,integration and networking. In this review, we will discuss thestatus of wearable devices that implement RF/microwavetechnologies and ideas of their applications for Internet of Things.Power density, safety, implementation issues, and systemchallenges will also be discussed.

WSL­2 Radar Techniques for Wireless IndoorPositioningSheng­Fuh Chang; National Chung Cheng UniversityGrowing interest of elderly healthcare in private and publicsectors has drawn intensive development on wearable bio­devices. In this lecture, a wearable radar is developed withintegrated functions of breath and heart­beat rate detection andmovement trajectory of multiple subjects in a room or publicarea. The breath and heart­beat rates are non­invasivelydetected based on the Doppler effect of the induced micro­vibration of the chest skin. The subject position is identified basedon the angle of arrival principle. The system consists of a vitalDoppler sensor, wireless data transceiver, and a microprocessor.It is implemented in a badge form factor for use convenience.Experimental tests in a furnished room will be demonstrated inthis workshop.

WSL­3 Miniature Near­field Radar Sensing Technologyfor Wearable ApplicationsHong­Dun Lin; Taiwan Industrial Technology Research InstituteIn recent years there has been increasing interest in wearablehealth monitoring devices, both in research and industry.Continuous monitoring of these vital signs can help identify apatient's risk for stroke, heart attack, heart failure, arterialaneurysm, and renal failure. These devices are particularlyimportant to the world's increasingly aging population, whosehealth has to be assessed daily monitored continuously.Currently, physiological monitoring devices for hospital used havebeen developed recently in either commercial market or academicfield for clinical applications. There are a number of health issueswhose treatment benefits from continuous vital sign monitoring.Traditionally, when this approach is deemed necessary, it resultsin the clinical applications of the patient, with expensiveequipment and medical personnel on hand; in some cases, thepatient may remain at home, but the use of bulky and expensiveequipment remains. Many of sensing techniques have beenapplied on basic physiological signal detection for clinicaldiagnosis and home healthcare. Most known maturely developedsensing methods (EEG/ECG/EMG/Temperature/BP etc. al.) repliedon contact way to obtain desired physiological information forfurther data analysis. However, those methods might cause someinconvenient and uncomfortable problems, and not easy to beused for home healthcare and personal physiological analysis. Toimprove this issue, a novel technology based on low power radartechnology based on low radio­frequency was proposed to detecthumans' pulse signal by the non­contact way forheartbeat/respiration/blood pressure signal measurement. By thistechnique, the dynamic body physical motion activity can beeasily detected and also revealed in real­time. For theprospective development, integration of all functions, includingsensing, signal processing and wireless data transmission, into adedicated system can be helpful to provide more significantdiagnosis information in routine health condition examination.The sensing technology performs a professional but easy­to­usedevice for physiological information measurement. The flexiblesensor operates using low­power radar, alone with a handhelddevice for tele­monitoring. It provides user a simple way tomonitor personal health for broadly clinical and homecareapplications.

WSL­4 Wearable Wireless Sensors for Seizure Detectionand Alert Systems

9/26/2016 IMS2015 | IEEE International Microwave Symposium | Sunday Workshop Descriptions

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Eric Chow; Cyberonics, Inc.The ProGuardian System, developed by Cyberonics, comprisesof primarily a wireless wearable monitoring patch that monitorsfor cardiac or movement based seizure events during periods ofsleep for people with epilepsy. The wearable patch communicateswirelessly, up to 30 ft, with a base­station hub via Bluetooth LowEnergy. The base station notification range is extendedthroughout a WiFi enabled home via the Caregiver app on anAndroid Smartphone. All notifications and seizure events will belogged and available as reports. Cyberonics also develops a ClassIII medical implantable neurostimulator which activates thevagus nerve for treatment of seizures in patients with epilepsy.Cyberonics has a far­field RF­wireless version of the device,currently in development, which interfaces with a wireless tabletprogrammer. In the future, all these components cancommunicate with each other wirelessly as well as interface withbroader wireless networks and the cloud. Wireless integration ofthe implantable therapy device with external wearable sensors,such as ProGuardian, may help improve the overall treatment ofepilepsy and other indications.

WSL­5 Wearable Sensor System for Monitoring BodyKinematicsVictor Lubecke; University of HawaiiExisting solutions rely on camera based systems with line­of­sightlimitations resulting in confined measurements or rely on InertialMeasurement Units (IMUs) which are prone to noise and drift,resulting in position inaccuracies. The objective of thisinvestigation is to evaluate and demonstrate the feasibility ofproducing a wearable sensor system to monitor human bodykinematics in real­time. We developed a wearable sensor systembased on sensor fusion of real­time measurements using RadioFrequency (RF) positioning sensors combined with MEMS basedIMU sensors. The combined sensors provide performanceadvantages over that of a single sensor, e.g. the RF derivedposition information can compensate for the IMU drift. The selfcontained sensor network has military and commercialapplications ranging from military training, virtual reality gaming,sports performance monitoring and physical therapy rehabilitationmonitoring.

WSL­6 Wearable Wireless Zero­Power Sensors UtilizingAdditive Manufacturing TechniquesManos Tentzeris; Georgia Institute of TechnologyNanotechnology and Inkjet­printed flexible electronics andsensors fabricated on paper, plastic and other polymer substratesare introduced as a sustainable ultra­low­cost solution for thefirst wearable paradigms of Internet of Things, "Smart Skins" and"Zero­Power" applications. The talk will cover examples from UHFup to the millimeter­wave frequency ranges, while it will includethe state of the art of fully­integrated wireless sensor modules onpaper, fabrics or flexible polymers and show the first ever 2Dsensor integration with an RFID tag module on paper, as well asnumerous 3D multilayer paper­based and LCP(Liquid CrystalPolymer)­based RF/microwave structures, that could potentiallyset the foundation for the truly convergent wearable wirelesssensor ad­hoc networks of the future with enhanced cognitiveintelligence and "zero­power" operability through ambient energyharvesting and wireless power transfer. Examples from wearable(e.g. bio­monitoring) antennas and RF modules will be reported,as well as the integration of inkjet­printed nanotechnology­basedsensors on paper and organic substrates. The talk will alsopresent challenges for inkjet­printed high­complexity modules aswell as future directions in the area of environmentally­friendly("green") RF electronics and "smart­clothes" conformal sensors.

WSL­7 Challenges of Wireless Technologies forWearable ElectronicsGernot Hueber; NXP SemiconductorsIn the past years wearable computers, which are small electronicdevices worn by the user, enable the user to mobile computingand wireless networking anywhere and anytime.Due to the complex wireless wearable communication systemwearable electronics have drawn more and more attention by theRF community.The design of such systems, a device must satisfy challengingthough important requirements: it has to be small in size, cost

TM

9/26/2016 IMS2015 | IEEE International Microwave Symposium | Sunday Workshop Descriptions

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efficient, and it needs to be ultra­low­power consumption toextend lifetime of batteries, reducing the cost of batteryexchanges, charging, or going even beyond by using energyharvesting. These criteria put tremendous challenge on thesystem design, from circuit design in low voltage domain, andespecially on the communication part.In this talk we will present wireless technologies suitable like e.g.,BT­LE, NFC, RFID, etc. and discuss their advantages anddisadvantages for wearables.

WSM

Session: WSM Current Trends in GaN PA PackagingChair: Dr. Kamal K. Samanta, Milmega/AMETEK Ltd, Ryde,

EnglandCo­Chair: Mr. Paul Garland, Kyocera America Inc, USAAbstract: Emerging applications of RF/MW frequencies demand

more and more linear power with ever greaterefficiency, frequency and bandwidth, and at a low costand light weight. The attractive material properties ofGaN make GaN­HEMT a superior candidate to meetthese demanding requirements, and enables GaN fordelivering highest level of power density. However,GaN transistors, owning to much smaller footprintthan a similar power GaAs­PA, are thermally limitedmuch below the electrical capability of the devices. Asa result, the key issue for the next generation highpower GaN PA is to effectively dissipate the ultra­highheat flux, generated at the micro­scale gate fingers,using efficient and novel packaging and thermalmanagement techniques. To address this challenge,recently, there is huge research interest which hasbeen investigating and developing various novelmaterials (including thermal interfacing and CTEcompliance materials), heat spreader, process andintegration and packaging techniques.This very timely workshop will attribute a wide rangeof presentations, highlighting the current status, thelatest trends and future challenges on packaging andthermal management, enabling GaN devices tooperate with high performance and reliability. Whilenewly developed metal­ceramic air cavity packageshave been providing reliable and repeatableperformance with high heat dissipation, plastic over­molded parts offer low cost and light weight solutions,and hybrid/module level packaging offers optimumapplication specific and wideband performance.Further, a special emphasis would be giving on therecent advances in plastic packaging which haveenabled higher power dissipation of the device whilemaintaining a low cost approach towards thematerials as well as assembling techniques. Thisutilizes innovative high temp compound plastic, epoxyand TIM materials to design techniques which enableplastic­packaged GaN devices for maintainingexcellent power densities and high efficiencies. At thesame time, the workshop will aware the participantswith the state­of –the art developments in the otherpackaging technologies with example of packages andtheir relative merits and applications.

WSM­1 High Power Plastic Packaging with GaNMr. Quinn Martin; MACOM Technology Solutions, USAFor many years high power RF packaging has been dominated bymetal and ceramic package construction and assemblyprocesses, with GaN being no exception to this trend. Theresulting products have been reliable, consistent, and capable ofdissipating heat out of the device. However, the material and

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assembly costs have been very high and throughput limited.Plastic overmolded parts, on the other hand, can be made at afraction of the cost but have historically been limited to lowerpower applications and not considered seriously for high powerGaN.Recent advances in plastic packaging have enabled higher powerdissipation of the device while still maintaining a low costapproach to the materials and assembly processes. This hasbeen achieved through package design, material selection, andprocess optimization. This paper will show examples of packagesthat use these different aspects to overcome historicalshortcomings of plastic packaging and enable high power GaNdevices to operate with good performance and high reliability inplastic packages.

WSM­2 Integrated Cu Heat Spreader Package withHermetic Potential for GaN ApplicationsMr. Mark Eblen; Kyocera America Inc, USAHigh power Gallium Nitride (GaN) device thermal dissipation hasrapidly become a limiting factor for conventional ceramicmicroelectronic packaging. As liquid cooling is still not fullyestablished at the discrete packaging level, new high thermalconductivity materials are being developed to replace the currentCTE controlled metal matrix composite heat spreaders. Aparticularly attractive solution seeks to integrate a low­costcopper heat spreader into a reliable, hermetic, air­cavity ceramicpackage. This workshop will cover the design methodology andsubsequent reliability testing used in developing this style ofpackage for the GaN market. It will also be shown how Kyocerautilizes simulation tools such as the finite element method tosignificantly decrease package development time. The author willalso briefly cover other low thermal resistance ceramicpackaging and assembly solutions targeting this market.

WSM­3 Packaging of Wideband High Power GaNAmplifiersDr Kamal K Samanta; Milmega/AMETEK, Ryde, EnglandMany advanced applications, such as EW and EMC, demand evergreater power over an ultra­wide band (octave or more), withina small size and with high reliability and long life. These leadingto incorporation of precise bias/temperature control circuits,integrated closed to the RF circuits. In addition, highelectromagnetic field enhances inter­circuit coupling, includingthat between RF and DC/control, which significantly influence theperformance of a high power GaN PA.A packaged transistor offers several advantages over a bare­die,but suffers from the package parasitic which may adverselyaffect wideband performance, especially towards the higher bandedge. Therefore, for ultra­wideband, very high power GaN­basedcircuits, efficient hybrid or module level packaging are extremelyimportant. This presentation will report the new hybrid/modulelevel packaging challenges and advanced developments for ultra­wideband (octave bandwidth) and very high power GaN PAmodules, delivering power from tens of Watts to 1 KW (CW). Thepractical effect of packaging lid, isolation walls and RF leakage(to digital/control circuits) on RF performance would bediscussed in details with real­world examples and solutions.Furthermore, the talk will highlight the die­based assembling andpackaging techniques adopted for optimizing the BW,compactness, performance and most importantly the reliabilityof amplifier modules, delivering CW power of 100s of Watts at S­and C­bands.

WSM­4 Advances in GaN packaging for low costapplicationsChris Hermanson; Cree Inc, USAAs GaN continues its rapid adoption into mainstream,telecommunications­based, systems the need for low costpackaging has become a key technology area of much interest.In this workshop we will present the results of our low costpackage development activities encompassing both ceramic andover­mold plastic technologies, at the component level. Theimportance of maintaining the RF performance features of GaNwill be addressed. The need for superior thermal managementwill be presented. The future directions of low cost RF packagingwill also be addressed in the context of the continually changingrequirements of new product development activities.

9/26/2016 IMS2015 | IEEE International Microwave Symposium | Sunday Workshop Descriptions

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WSM­5 GaN: A strategic move from hybrid devices toplastic packagesP. Alléaume; M. Camiade; D. Floriot; P. Sin, T. Barbier, D. Bouw;E. Byk; G. Mouginot; Z. Ouarch; C. Auvinet; United MonolithicSemiconductors, Villebon­sur­Yvette, FrancePower amplifiers and more generally power functions arebasically considered as the most expensive and critical ones inthe RF and microwave applications. Knowing the limitations todecrease the price of the semiconductor in the system,packaging developments associated to the power functions arebecoming decisive in the success of the power system. In thispresentation, we will illustrate the progressive move from baredies and hybrids RF modules to metal ceramic and more recentlyto plastic packages. We will also detail the new packagingchallenges which are appearing with the introduction of the GaNtechnology where the power density in comparison with GaAstechnologies is multiplied by more than five. Indeed, thanks toseveral new technologies like power PCBs and high thermal die­attaches, the tradeoff between cost and power dissipation leadsto reconsider the advantages of the flange power packagesversus their low cost plastic SMD variants which also operate athigher frequency.

WSN

Session: WSN Technologies for Tunable and ReconfigurableRF/Microwave Filters

Chair: Domine Leenaerts, NXPCo­Chair: Mohyee Mikhemar, BroadcomCo­Chair: Pierre Blondy, XLIMCo­Chair: Xun Gong, UCFAbstract:

WSN­1 The Promise and Limits of On­Chip Filtering andCMOS Wideband Receiver DesignDavid Murphy; BroadcomTo be practical, wideband receivers must tolerate large out­of­band blockers, which can desensitize the receiver through gaincompression or reciprocal mixing with LO phase noise. Forexample, an E­GSM compliant RX must handle a 0dBm blocker ata 20MHz offset from the wanted signal without excessivelydegrading the RX's noise figure. Because of such demandingspecifications, industry has traditionally shunned wideband RXdesign in favor of the conventional multiple narrowbandapproach, where many tuned CMOS front­ends with fixed off­chip filters are used to provide the required frequency coverage.However, recent circuit innovations such as passive­mixerimplementations of N­path filtering is making wideband designmore feasible, while the requirement to minimize package pincount and PCB complexity is making such designs moreattractive. This workshop will give an overview of the latestcircuit research and demonstrate how new CMOS widebandarchitectures with implicit N­path filtering can, in certainapplications, compete with the performance of existingnarrowband solutions. Both the limitations and possibilities ofsuch designs will be explored and case studies will be presented.

WSN­2 Reconfigurable and Tunable MicromechanicalFilter Technologies for Adaptive RF SystemsRoy H. Olsson III; DARPAAs the radio frequency (RF) spectrum has become morecrowded, the need for reconfigurable and adaptable RFcomponents, especially filters, has grown. To address this needmicromechanical resonators and filters have been the subject ofactive research. These resonators and filters are small (<1mm3),have the high quality factors (>1000) desired for steep filter roll­off, can achieve many filters covering a very wide frequency span(kHz to GHz) on a single chip and can be monolithicallyintegrated with CMOS transistors for reconfiguring of a singlechip filter array.This tutorial will overview the different transduction mechanisms

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and materials used to realize micromechanical resonators andthe resulting device performance. The physics underlying theimprovements in resonator electromechanical coupling, qualityfactor and size realized via micromachining will be presented.The limits imposed on filter bandwidth, insertion loss and tuningrange by the resonator electromechanical coupling and qualityfactor will be discussed. Methods for realizing reconfigurable RFfilters using switched filter arrays will be detailed along with thelimitations of this approach. Finally, nontraditional methods fortuning the center frequency of micromechanical resonators andfilters that may offer increases in the tuning range will bepresented.

WSN­3 Cellular Terminal Antenna Impedance Tuners inCMOS­SOI TechnologyHenrik Sjöland; Lund UniversityDesign considerations of cellular terminal antenna impedancetuners implemented in CMOS­SOI technology will be presented.A recently designed low­band tuner in 130nm technology willserve as an example. It features three digitally controlledswitched capacitor banks and two off­chip inductors. To provide avoltage handling of at least 20V, the switched capacitors areimplemented with eight stacked transistors and custom madecapacitors. The linearity is improved by using negative gate biasof the switch transistors in the off state. The measured OIP3exceeds +55dBm for all impedance states, covering a VSWR ofup to 5.4. The minimum loss is measured to 1dB or lower in thefrequency range from 700­900MHz, and the spurious emissionsare below ­30dBm at +33dBm input power. The tuner has alsobeen used in a MIMO terminal prototype. The performanceimprovement due to the tuner when using the terminal indifferent propagation environments and with different user gripstyles has been measured, and the net multiplexing gain was2.5dB in a corridor environment.

WSN­4 Tunable Filters Topologies for 0.7­3 GHz Carrier­Aggregation Wireless SystemsGabriel Rebeiz; University of California, San DiegoThe talk will present the lastest work in tunable bandpass andbandstop filters for multi­carrier radios, also known as carrier­aggregation systems. The filters allow for two bandpass andbandstop responses at the same time, each independently tuned,and are implemented using Schottky diodes and RF MEMSdevices. Design methodologies and measured results will bepresented.

WSN­5 Self­Interference Cancellation in the RF DomainSachin Katti; StanfordSelf­interference arises when radios are tightly packed in adevice, its experienced in­band, adjacent­band and out of band.These are commonly known as in­band full duplex, frequencydivision full duplex and radio coexistence in industry parlance.This talk reviews our recent work on self­interferencecancellation, and discusses how it can be applied to handle self­interference problems in multi­band multi­protocol devices.

WSN­6 Linear Wideband Tunable filters using MEMS,SoS and GeTe switchesPierre Blondy; University of Limoges, Limoges, FranceThe presentation will cover several examples of tunable filtersusing innovative tuning technologies. Similar designs will becompared using different technologies, like MEMS and SoS withnoticeable differences in loss and linearity. Multistable switchesusing GeTe materials will be shown and their potential fortunable filters will be presented. This technology will allowreconfiguration of filters and matching network withoutpermanent applied bias.

WSN­7 Recent Advances in Single and Multi­BandAdaptive and Reconfigurable FiltersAndrew C. Guyette ; Roberto Gomez­Garcia ; Eric J. Naglich ;NRL, University of Alcala, SpainAdvanced reconfigurable and adaptive filters are required tomeet the needs of future high­performance microwave systems.Filters are needed that not only have reconfigurable centerfrequency and bandwidth, but are also capable of operating overmultiple frequency bands simultaneously. In addition, the ability

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9/26/2016 IMS2015 | IEEE International Microwave Symposium | Sunday Workshop Descriptions

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to automatically adapt to changes in the spectral environment(e.g. power level of an interferer) is a requirement in situationswhere a fast reaction time is a concern. This talk will coverrecent developments in multi­band reconfigurable filters,switched filters, and RF­power­dependent filters.

WSN­8 Solutions for Reconfigurable Mobile Device RFFront­endsArt Morris; WiSpry Inc.Tunable RF elements are now in widespread use within mobilehandsets to improve performance, compensate for environmentalinfluences, shrink antenna volumes and shorten design cycles.Many companies are now bringing tuner products to the marketutilizing a range of core technologies. As a new component in theRF designer's toolkit, the impact of tunable components on thedesign and implementation of modern radios is still in its infancy.The performance, size and cost requirements for the tunableelements depend strongly on details of the application.The most critical challenge facing the RF front end of modernradios arises from the rapidly multiplying frequency bands ofoperation for 4G systems around the world. In many cases, thereis a multiplicity of bands even within individual countries. Eachfrequency band and mode typically requires customized filteringto handle unique interference challenges. The complexityfollowing the present design approach scales super­linearly dueto the interactions between the multiple hardware chains,particularly with regards to matching and isolation. The increasein hardware also applies strong upward pressure on system areaand cost while negatively impacting performance, particularlyoverall efficiency. We present details on a development toward afully tunable system targeted to replace the large quantity offixed elements currently required with a scalable and compactglobal solution.

WSN­9 Design Considerations of High­Q Tunable FiltersRaafat R. Mansour, University of Waterloo, CanadaHigh performance tunable filters are needed in wireless basestations to facilitate efficient utilization of the available frequencyspectrum. They can be employed to replace large filter banks inadvanced systems concepts that self­adapt to environmentalrequirements. In addition, tunable filters can be used toconsolidate more hardware into fewer units, which in turn willreduce base­station size and logistics management. Thepresentation will address recent developments in high­Q tunablefilters for wireless base stations. It will also address severalimportant design considerations for such filters.

WSN­10 Micromachined Transfer Function AdaptiveFiltersDimitrois Peroulis; Purdue UniversityIn this talk we will approach the problem of creating adaptivetransfer function filters from two angles. First, we will reviewavailable and new technologies and second, we will present novelarchitectures for synthesizing the desired frequency responses.From the technology point of view, the frequency­tunable RFMEMS evanescent­mode cavity technology has been found to bea particularly promising solution. Not only resonators with thistechnology have shown promising characteristics in multipleareas, but also attractive technology solutions seem to beavailable to satisfy the remaining challenges. In addition, theseresonators are fully scalable from sub­GHz to over 100 GHz whilepreserving their wide tuning range and low­loss characteristics.The second part of this talk will focus on architectural challenges.Approaches that are based on existing architectures with a merereplacement of static resonators with tunable ones have beenproven rather ineffective. This is due to the fact that a fullyadaptive response in this case requires not only tunableresonators, but also adaptive inter­resonator and externalcouplings. Adaptive couplings are quite challenging to implementand often result in significantly worse performance with respectto loss, selectivity, power handling, and linearity. On the otherhand, new synthesis approaches that focus on cascading simplebuilding blocks have shown very promising results. In this talkwe will review such approaches primarily for interferencemitigation applications. Tunable filters with the additionalcapability of changing their response from bandpass to bandstopwill also be discussed. We will finally introduce the concept ofField­programmable Filter Arrays (FPFAs) and also reviewpractical realizations along with their associated couplingmatrices.

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WSO

Session: WSO Towards 5G: Circuits, Systems, MIMO andBeamforming Techniques

Chair: Prof. James Buckwalter, UCSBCo­Chair: Prof. Eric Klumperink, TwenteCo­Chair: Prof. Jeyanandh ParameshCo­Chair: Prof. Huei WangAbstract: Nothing can grow exponentially forever except –

perhaps – for wireless communications. To supportthe huge demand for gigabit­per­second data rates,much denser networks with smaller cells andmillimeter­wave bands are foreseen for nextgeneration 5G wireless systems. There is still room todefine how 5G standards will evolve based on MIMOand mm­wave techniques and the new RFICtechniques that will be required. In particular,systems with multiple antennas exploiting MIMO andbeamforming will likely play a big role to increase datacapacity, reduce interference of RF transmitters, orsuppress interference exploiting adaptivebeamforming in the receiver. This workshop will bringtogether industry and academic experts to review thechallenges of deploying 5G systems and severalenabling mm­wave, RF, and mixed­signal techniquesto meet 5G demands.

WSO­1 The Best Future for Wireless: Fluid StandardsDaniel W. Bliss; Arizona State University, Arizona, USAHopefully, fluid wireless standards are in your future. Not onlyshould these system be fluid, but they should enable higherperformance, higher density, robust adaptive signaling. For goodreasons, communications standards have evolved to be inflexiblein implementation and fragile in operation. They are noworganized as exclusive physical and MAC stovepipes. To minimizesize, weight, and power, very specific standards withcorresponding inflexible implementations were developed. Theclassic example is the current "cell phone" implementation withat least four radio systems implement within it. With recentadvances in mixed architecture containing both hardwareaccelerators and flexible processors, there is a path toward fluidstandards. These fluid standards should include parametricsolutions to simultaneously address the needs of a wide range ofradio operations. Cellular, local area, and personal area shouldbe satisfied by a single fluid standard with higher performanceenabled across varying system needs.

WSO­2 On the Path to Commercial mmWave MobileSolutionsTom Kovarik; Amitava Ghosh; Mark Cudak; NokiaProjections indicate that cellular capacity will continue to grow atexponential rates and may achieve 1000 times today's capacityby 2020 and perhaps 10,000X by 2025. The large bandwidth ofspectrum available in the mm­Wave band makes for anattractive resource to support such capacity gains. Still,numerous challenges face developers of commercial mm­Wavesolutions – propagation characteristics and the systems neededto overcome them, cost and power consumption of RF circuitryand data converters as well as PHY and algorithm developmentfor new dynamic systems. This presentation outlines thesechallenges, identifies the industry trends and notes areasneeding additional improvements to make use of mm­Wavespectrum commercially viable.

WSO­3 Filter Bank Multicarrier Techniques for MassiveMIMOBehrouz Farhang­Boroujeny; University of Utah, USAThis contribution discusses filter bank multicarrier (FBMC) as apotential candidate in the application of massive MIMO

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communication and points out the advantages of FBMC overOFDM (orthogonal frequency division multiplexing). In particular,since FBMC operates without any cyclic prefix, it offers a higherbandwidth efficiency than OFDM. In addition, it is demonstratedthat FBMC has a blind equalization capability that makes it anexcellent candidate for tracking channel variations in massiveMIMO systems. It can be also benefited from as a means ofresolving the problem of pilot contamination; a major limitingfactor in achieving the full capacity of massive MIMO networks.Moreover, the well localized subcarrier spectra in FBMC allowtrivial implementation of carrier aggregation schemes using asingle multicarrier processing block. We also discuss varioussignal processing algorithms that one may take advantage of forefficient implementation of FBMC massive MIMO systems.

WSO­4 Interference Robust CMOS BeamformingReceivers in the low­GHz mobile frequencybandsBram Nauta; University of Twente, Enschede, The NetherlandsMulti­antenna beamforming in phased­array receivers aims toincrease the receiver sensitivity, while providing an opportunityto reject in­band interferers through spatial filtering. This talk willreview some available beamforming mechanisms for spatialfiltering and discuss circuit design techniques for theimplementation of such systems in CMOS technology. The focusis on analog and RF techniques for beamforming based onpassive mixers and/or N­path filter techniques. These techniquesallow frequency and spatial selectivity which are highlycompatible with nanometer CMOS.

WSO­5 Millimeter­wave phased­array systems for 5GcommunicationsGabriel M. Rebeiz; Samet Zihir; Bon­Huyn Ku; Tumay Kanar;Ozgur Inac; Sang­Young Kim; University of California, San DiegoThis talk will present our latest work in millimeter­wave phased­arrays including built­in­self­test and high efficiency antennas.The chips are built so as to allow scalability to a large number ofelements (256 or 1024) at 60 GHz or 80 GHz. Several systemswill be presented including a 16 element phased array at 80 GHzwith +/­50 deg scanning in one plane, and a 64­element phasedarray with +/­ 60 deg. scanning in both planes, making this thelargest phased­array every developed in silicon. Designmethodologies and measurements will be presented.

WSO­6 Silicon­based ICs and organicpackaging/antenna solutions for Gb/s mmWavecommunicationsAlberto Valdes­Garcia; IBM ResearchSingle­element and phased array mmWave transceiverarchitectures for directional Gb/s wireless links, suitable for fullintegration in silicon are reviewed. Antenna diversity and beamforming techniques suitable for low­cost packagingimplementation are also discussed, considering both short­rangepersonal communications and long­range back­haulcommunications. Fully integrated transceiver implementationexamples including antennas­in­package at 60GHz and 94GHzare presented to illustrate system­implementation trade­offs,and IC­package co­design challenges.

WSO­7 Wideband Millimeter­wave BeamformingReceivers in SiliconJeyanandh Paramesh; Carnegie Mellon University, Pittsburg, USMillimeter­wave wireless networks have been standardized in the57­66 GHz band and extensions are under development, notablyin the Chinese 43.5­47 GHz IEEE 802.11aj standard. Themillimeter­wave bands are being strongly considered for cellularcommunication, with nearly 29 GHz of bandwidth expected toopen up from 28 GHz to 90 GHz. Multi­antenna techniques areessential in such application, and high­performance, low costtransceivers capable of operation over a very wide frequencyrange are essential. This talk will review current and emergingmillimeter­wave transceiver design approaches in silicon(especially CMOS) technologies.

WSO­8 Next generation power amplifier for 5G HandsetApplication

9/26/2016 IMS2015 | IEEE International Microwave Symposium | Sunday Workshop Descriptions

http://ims2015.org/technical-program/workshops/6-technical-program/technical-program-general-content/254-sunday-workshop-descriptions#WSL 38/40

Bumman Kim, Yunsung Cho; Byungjoon Park; Sangsu JinPohang; University of Science and Technology, KoreaCommercialization of 5G systems has targeted the year 2020 butlittle about the system architecture has been determined.However, 5G systems will likely operate at mm­wave frequenciesusing modulation formats that require a linear PA. Current mm­wave PA are usually optimized for transistor operation in thesaturated region. The PA should be optimized for linearity withhigh gain from the device. Design examples at 28 and 60 GHzbands will be presented using current GaAs pHEMT and CMOSdevices. For modulated signals, the Doherty architecture may bea good choice and a linear Doherty design will be introduced forhigh frequency band.

WSO­9 1024­QAM MMW Transceiver for 5GCommunicationsTian­Wei Huang; Wei­Heng Lin; Jeng­Han Tsai; Huei Wang;National Taiwan UniversityTo optimize system EVM performance, the IQ modulator anddemodulator are key components. Compensation of IQ imbalanceat mm­wave frequency is an important enabling technology forgigabit 1024­QAM wireless links. For IQ compensation at V­bandor E­band frequency, the phase compensation has more designchallenges than the amplitude calibration and compositeright/left­handed transmission line, switched capacitor array, andphase shifters have been proposed for the IQ phase calibration.To maintain a high image­rejection ratio of the IQ modulatorover a wide bandwidth, a load­insensitive local oscillator (LO)broadband power splitter has been implemented to achieve lowamplitude and phase imbalanced structure. All above built­incompensation techniques are innovations that pave the road tothe next­generation millimeter­wave 5G mobile smart RFICs.

WSP

Session: WSP Microwave photonics for broadbandmeasurement

Chair: Shilong Pan, Nanjing University of Aeronautics andAstronautics

Co­Chair: Stavros Iezekiel, University of CyprusAbstract: The recent advancement of microwave photonics

(MWP) techniques has led to the fast development ofnew and innovative measurement solutions for variousapplications. MWP based measurement systems havesome key advantages including good uniformity acrossa large bandwidth, high isolation between the inputand output, little perturbance to the signals to bemeasured, and fast response as compared withconventional pure microwave or optical systems.Numerous instruments with unprecedentedperformance have been developed and are nowcommercially available, such as a broadband phasenoise measurement system based on a fiber delay linewhich has a phase noise floor of ­168 dBc/Hz@10kHzoffset at 10 GHz, a wideband microwave electric­fieldmeasurement system based on a photonicelectromagnetic field sensor with minimal disturbanceto the field, and a 40 GHz photonic ADC for directlysampling and characterizing a broadband microwavesignal. In addition, many more MWP measurementsystems are being developed and commercialized. Theobjective of this workshop is to discuss the recentdevelopments in MWP­based broadband measurementsolutions, including new measurement systems andnew devices for broadband measurement. Challengesand future directions in MWP measurement will also bediscussed.

WSP­1 High speed and high resolution optical sensingbased on optoelectronic oscillators

9/26/2016 IMS2015 | IEEE International Microwave Symposium | Sunday Workshop Descriptions

http://ims2015.org/technical-program/workshops/6-technical-program/technical-program-general-content/254-sunday-workshop-descriptions#WSL 39/40

Jianping Yao; University of Ottawa, CanadaConventional fiber Bragg grating sensors have a few limitations,such as the limited interrogation resolution when operating at ahigh speed, and the difficulty in separating different measurandsor measuring a specific measurand. In this talk, based onmicrowave photonics techniques, three different fiber Bragggrating sensors with high interrogation resolution and fast speedare discussed: 1) a linearly chirped fiber Bragg grating sensorbased on frequency­to­time mapping and pulse compression,which is able to achieve simultaneous measurements of a strainand temperature at a MHz speed; 2) a strain sensor based on atunable optoelectronic oscillator employing a single­mode phase­shifted fiber Bragg grating. Ultra­fast interrogation is achieved bydirectly measuring the oscillation frequency with a high resolutionof 3.60 femtometer; 3) a temperature­insensitive transverse loadsensor based on a dual­frequency optoelectronic oscillatoremploying a polarization­maintaining phase­shifted fiber Bragggrating. Fast interrogation is achieved by measuring thedifference of the two oscillation frequencies. The sensitivity andthe minimal detectable load are measured to be as high as ∼9.73GHz/(N/mm) and 2.06×10−4 N/mm, respectively.

WSP­2 Microwave Photonics for BroadbandMeasurements: Generation and Characterizationof Low Phase Noise OscillatorsLute Maleki; OEwaves Inc., USAPhotonics technology has recently produced microwave and mm­wave oscillators with the highest reported spectral purity. Theseoscillators are based on optoelectronic feedback loops, and ondemodulation of optical frequency combs on fast photodetectors.The advent of high performance oscillators has presented achallenge for measurement and characterization of their phasenoise. Here again, photonics technology is the suitable solutionfor the measurement of phase noise of reference signals atmicrowave and mm­wave frequencies, at a level beyond what isachievable with conventional electronic systems. These andrelated subjects will be discussed in the presentation.

WSP­3 3D Printed Phased Array Antenna on aConformable SurfaceRay T. Chen; University of Texas, Austin, USA: The research topics are focused on three main subjects: (1)Nano­photonic passive and active devices for sensing andinterconnect applications, (2) Thin film guided­wave opticalinterconnection and packaging for 2D and 3D laser beam routingand steering, and (3) True time delay (TTD) wide band phasedarray antenna (PAA). 3D printing phased array antennas from 8to 20 GHz on flexible substrates which can be integrated withairborne and spaceborne vehicles with minimum payloads. Bothpassive and active components will be designed and then printedusing newly developed 3D printing technology. Siliconnanomembrane devices will also be integrated to provideswitching and modulation functions.

WSP­4 Multi­band digital radars based on photonicsPaolo Ghelfi; Filippo Scotti; CNIT ­ National Laboratory ofPhotonics Networks, Pisa, ItalyThis work presents a photonics­based architecture of a multi­band coherent digital radar system. The precision and flexibilityof photonic technologies are exploited for generating anddetecting simultaneously multiple radar signals in an extremelywide frequency range. Moreover, the fully digital approachenables the software defined radio paradigm, allowing the flexibleuse of several advanced radar techniques, as waveform diversityor frequency hopping. The presented architecture therefore issuitable for future radar systems that need to adapt to differentscenarios for improved situation awareness. The proposedsystem has been implemented exploiting a single laser unit,reducing the architectural complexity with potential benefits onsystem dimensions, cost and reliability. This work details theprinciple of operation of the proposed multi­band coherent radarsystem, and describes the implementation of a proof­of­conceptdual­band transceiver operating in the X­ and S­ bandssimultaneously and independently. The results from thecharacterization of the transceiver are presented. The systemvalidation through the coherent detection of moving targets

9/26/2016 IMS2015 | IEEE International Microwave Symposium | Sunday Workshop Descriptions

http://ims2015.org/technical-program/workshops/6-technical-program/technical-program-general-content/254-sunday-workshop-descriptions#WSL 40/40

confirms the suitability of the proposed solution, laying the basisfor a new paradigm of radar systems.

WSP­5 Ultra­wideband microwave signal processingbased on spatial­spectral holography in photonicmaterialsKrishna Mohan Rupavatharam; Spectrum Lab, Montana StateUniversity, USASpatial­spectral holography (S2H) based on optical materialsrepresents a unique approach to the problem of continuousspectral monitoring of ultra­wideband microwave signals. Thistechnique can perform instantaneous capture and processing ofmultiple signals with complexmodulation formats over extremebandwidths, with a fast response and low latency. Several analogsignal processing capabilities including spectrum analysis,direction finding, range Doppler processing , analog­to­digitalconversion , and true­time delay generation have beendemonstrated with these photonics systems. This presentationdeals with the concept of microwave signal processing with S2Hmaterials, enabling component technologies and demonstrationsof applications.

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