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IKW20N60H3High speed switching series third generation
Rev. 1.1 2010-02-01
High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diode
Features:TRENCHSTOPTM technology offering • very low VCEsat• low EMI• Very soft, fast recovery anti-parallel diode • maximum junction temperature 175°C • qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant• complete product spectrum and PSpice Models:http://www.infineon.com/igbt/
Applications:• uninterruptible power supplies• welding converters• converters with high switching frequency
G
C
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TypeTypeTypeType VVVV†Š†Š†Š†Š IIII†††† VVVV†ŠÙÈÚ, †ŠÙÈÚ, †ŠÙÈÚ, †ŠÙÈÚ, TTTTÝÎ=25°CÝÎ=25°CÝÎ=25°CÝÎ=25°C TTTTÝÎÑÈàÝÎÑÈàÝÎÑÈàÝÎÑÈà MarkingMarkingMarkingMarking PackagePackagePackagePackage
IKW20N60H3 600V 20A 1.95V 175°C K20H603 PG-TO247-3
Maximum ratingsParameter Symbol Value UnitCollector-emitter voltage V†Š 600 V
DC collector current, limited by TÝÎÑÈàT† = 25°CT† = 100°C
I† 40.020.0
A
Pulsed collector current, tÔ limited by TÝÎÑÈà I†ÔÛÐÙ 80.0 A
Turn off safe operating area V†Š ù 600V, TÝÎ ù 175°C - 80.0 A
Diode forward current, limited by TÝÎÑÈàT† = 25°CT† = 100°C
IŒ 20.010.0
A
Diode pulsed current, tÔ limited by TÝÎÑÈà IŒÔÛÐÙ 80.0 A
Gate-emitter voltage V•Š ±20 V
Short circuit withstand timeV•Š = 15.0V, V†† ù 400V, TÝÎ ù 150°CAllowed number of short circuits < 1000Time between short circuits: ú 1.0s
t»† 5 µs
Power dissipation T† = 25°CPower dissipation T† = 100°C PÚÓÚ 170.0
85.0 W
Operating junction temperature TÝÎ -40...+175 °C
Storage temperature TÙÚÃ -55...+150 °C
Soldering temperature,wavesoldering 1.6 mm (0.063 in.) from case for 10s 260 °C
Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm
2
IKW20N60H3High speed switching series third generation
Rev. 1.1 2010-02-01
Thermal ResistanceParameter Symbol Conditions Max. Value UnitCharacteristicIGBT thermal resistance,junction - case RÚÌñÎ-Êò 0.88 K/W
Diode thermal resistance,junction - case RÚÌñÎ-Êò 1.89 K/W
Thermal resistancejunction - ambient RÚÌñÎ-Èò 40 K/W
Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at TTTTÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
Static CharacteristicCollector-emitter breakdown voltage Vñ…çò†Š» V•Š = 0V, I† = 2.00mA 600 - - V
Collector-emitter saturation voltage V†ŠÙÈÚ
V•Š = 15.0V, I† = 20.0ATÝÎ = 25°CTÝÎ = 125°CTÝÎ = 175°C
---
1.952.302.50
2.40--
V
Diode forward voltage VŒ
V•Š = 0V, IŒ = 10.0ATÝÎ = 25°CTÝÎ = 125°CTÝÎ = 175°C
---
1.651.671.65
2.05- V
Gate-emitter threshold voltage V•ŠñÚÌò I† = 0.29mA, V†Š = V•Š 4.1 5.1 5.7 V
Zero gate voltage collector current I†Š»V†Š = 600V, V•Š = 0VTÝÎ = 25°CTÝÎ = 175°C
--
--
40.01000.0
µA
Gate-emitter leakage current I•Š» V†Š = 0V, V•Š = 20V - - 100 nA
Transconductance gËÙ V†Š = 20V, I† = 20.0A - 10.9 - S
Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at TTTTÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specifiedÝÎ = 25°C, unless otherwise specified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
Dynamic CharacteristicInput capacitance CÍþÙ - 1100 -
Output capacitance CÓþÙ - 70 -
Reverse transfer capacitance CØþÙ - 32 -
V†Š = 25V, V•Š = 0V, f = 1MHz pF
Gate charge Q• V†† = 480V, I† = 20.0A, V•Š = 15V - 120.0 - nC
Internal emitter inductancemeasured 5mm (0.197 in.) from caseLŠ - 13.0 - nH
Short circuit collector currentMax. 1000 short circuitsTime between short circuits: ú 1.0s
I†ñ»†ò V•Š = 15.0V, V†† ù 400V, TÝÎ ù 150°C, t»† ù 5µs - 120 - A
3
IKW20N60H3High speed switching series third generation
Rev. 1.1 2010-02-01
Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at TTTTÝÎ = 25°CÝÎ = 25°CÝÎ = 25°CÝÎ = 25°C
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBT CharacteristicTurn-on delay time tÁñÓÒò - 17 - ns
Rise time tØ - 23 - ns
Turn-off delay time tÁñÓËËò - 194 - ns
Fall time tË - 11 - ns
Turn-on energy EÓÒ - 0.56 - mJ
Turn-off energy EÓËË - 0.24 - mJ
Total switching energy EÚÙ - 0.80 - mJ
TÝÎ = 25°C,V†† = 400V, I† = 20.0A,V•Š = 0.0/15.0V,r• = 14.6Â, Lÿ = 75nH,Cÿ = 30pFLÿ, Cÿ from Fig. EEnergy losses include “tail” anddiode reverse recovery.
Anti-Parallel Diode Characteristic, at Anti-Parallel Diode Characteristic, at Anti-Parallel Diode Characteristic, at Anti-Parallel Diode Characteristic, at TTTTÝÎ = 25°CÝÎ = 25°CÝÎ = 25°CÝÎ = 25°C
Diode reverse recovery time tØØ - 112 - ns
Diode reverse recovery charge QØØ - 0.39 - µC
Diode peak reverse recovery current IØØÑ - 11.0 - A
Diode peak rate of fall of reverserecovery current during tÉ diØØ/dt - -750 - A/µs
TÝÎ = 25°C,Vç = 400V,IŒ = 20.0A,diŒ/dt = 1000A/µs
Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at Switching Characteristic, Inductive Load, at TTTTÝÎ = 175°CÝÎ = 175°CÝÎ = 175°CÝÎ = 175°C
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBT CharacteristicTurn-on delay time tÁñÓÒò - 16 - ns
Rise time tØ - 21 - ns
Turn-off delay time tÁñÓËËò - 227 - ns
Fall time tË - 14 - ns
Turn-on energy EÓÒ - 0.71 - mJ
Turn-off energy EÓËË - 0.36 - mJ
Total switching energy EÚÙ - 1.07 - mJ
TÝÎ = 175°C,V†† = 400V, I† = 20.0A,V•Š = 0.0/15.0V,r• = 14.6Â, Lÿ = 75nH,Cÿ = 30pFLÿ, Cÿ from Fig. EEnergy losses include “tail” anddiode reverse recovery.
Anti-Parallel Diode Characteristic, at Anti-Parallel Diode Characteristic, at Anti-Parallel Diode Characteristic, at Anti-Parallel Diode Characteristic, at TTTTÝÎ = 175°CÝÎ = 175°CÝÎ = 175°CÝÎ = 175°C
Diode reverse recovery time tØØ - 191 - ns
Diode reverse recovery charge QØØ - 0.91 - µC
Diode peak reverse recovery current IØØÑ - 14.2 - A
Diode peak rate of fall of reverserecovery current during tÉ diØØ/dt - -500 - A/µs
TÝÎ = 175°C,Vç = 400V,IŒ = 20.0A,diŒ/dt = 1000A/µs
4
IKW20N60H3High speed switching series third generation
Rev. 1.1 2010-02-01
Figure 1.Figure 1.Figure 1.Figure 1. Collector current as a function of switchingCollector current as a function of switchingCollector current as a function of switchingCollector current as a function of switchingfrequencyfrequencyfrequencyfrequency(TÎù175°C, D=0.5, V†Š=600V, V•Š=15/0V,R•=14,6Â)
f, SWITCHING FREQUENCY [kHz]
I†, COLLECTOR CURRENT [A]
10 100 10000
10
20
30
40
50
60
70
80
90
T†=80°
T†=110°
T†=80°
T†=110°
Figure 2.Figure 2.Figure 2.Figure 2. Forward bias safe operating areaForward bias safe operating areaForward bias safe operating areaForward bias safe operating area(D=0, T†=25°C, TÎù175°C; V•Š=15V)
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
I†, COLLECTOR CURRENT [A]
1 10 100 10000.1
1
10
100
tÔ=1µs
10µs
50µs
100µs
200µs
500µs
DC
Figure 3.Figure 3.Figure 3.Figure 3. Power dissipation as a function of casePower dissipation as a function of casePower dissipation as a function of casePower dissipation as a function of casetemperaturetemperaturetemperaturetemperature(TÎù175°C)
T†, CASE TEMPERATURE [°C]
PÚÓÚ, POWER DISSIPATIO
N [W]
25 50 75 100 125 150 1750
20
40
60
80
100
120
140
160
180
Figure 4.Figure 4.Figure 4.Figure 4. Collector current as a function of caseCollector current as a function of caseCollector current as a function of caseCollector current as a function of casetemperaturetemperaturetemperaturetemperature(V•Šú15V, TÎù175°C)
T†, CASE TEMPERATURE [°C]
I†, COLLECTOR CURRENT [A]
25 50 75 100 125 150 1750
10
20
30
40
5
IKW20N60H3High speed switching series third generation
Rev. 1.1 2010-02-01
Figure 5.Figure 5.Figure 5.Figure 5. Typical output characteristicTypical output characteristicTypical output characteristicTypical output characteristic(TÎ=25°C)
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
I†, COLLECTOR CURRENT [A]
0 2 4 60
10
20
30
40
50
60
70
80
V•Š=20V
17V
15V
13V
11V
9V
7V
5V
Figure 6.Figure 6.Figure 6.Figure 6. Typical output characteristicTypical output characteristicTypical output characteristicTypical output characteristic(TÎ=175°C)
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
I†, COLLECTOR CURRENT [A]
0 2 4 6 80
10
20
30
40
50
60
70
80
V•Š=20V
17V
15V
13V
11V
9V
7V
5V
Figure 7.Figure 7.Figure 7.Figure 7. Typical transfer characteristicTypical transfer characteristicTypical transfer characteristicTypical transfer characteristic(V†Š=20V)
V•Š, GATE-EMITTER VOLTAGE [V]
I†, COLLECTOR CURRENT [A]
5 6 7 8 9 10 11 120
10
20
30
40
50
60
70TÎ=25°CTÎ=175°C
Figure 8.Figure 8.Figure 8.Figure 8. Typical collector-emitter saturation voltageTypical collector-emitter saturation voltageTypical collector-emitter saturation voltageTypical collector-emitter saturation voltageas a function of junction temperatureas a function of junction temperatureas a function of junction temperatureas a function of junction temperature(V•Š=15V)
TÎ, JUNCTION TEMPERATURE [°C]
V†Š
ñÙÈÚò, COLLECTOR-EMITTER SATURATIO
N [A]
0 25 50 75 100 125 150 1751.0
1.5
2.0
2.5
3.0
3.5
4.0I†=10AI†=20AI†=40A
6
IKW20N60H3High speed switching series third generation
Rev. 1.1 2010-02-01
Figure 9.Figure 9.Figure 9.Figure 9. Typical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofcollector currentcollector currentcollector currentcollector current(ind. load, TÎ=175°C, V†Š=400V,V•Š=15/0V, R•=14,6Â, test circuit in Fig.E)
I†, COLLECTOR CURRENT [A]
t, SWITCHING TIM
ES [ns]
4 8 12 16 20 24 28 32 36 401
10
100tÁñÓËËòtËtÁñÓÒòtØ
Figure 10.Figure 10.Figure 10.Figure 10. Typical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofgate resistorgate resistorgate resistorgate resistor(ind. load, TÎ=175°C, V†Š=400V,V•Š=15/0V, I†=20A, test circuit in Fig. E)
R•, GATE RESISTOR [Â]
t, SWITCHING TIM
ES [ns]
5 10 15 20 25 30 35 40 45 5010
100
1000tÁñÓËËòtËtÁñÓÒòtØ
Figure 11.Figure 11.Figure 11.Figure 11. Typical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofjunction temperaturejunction temperaturejunction temperaturejunction temperature(ind. load, V†Š=400V, V•Š=15/0V,I†=20A, R•=14,6Â, test circuit in Fig. E)
TÎ, JUNCTION TEMPERATURE [°C]
t, SWITCHING TIM
ES [ns]
0 25 50 75 100 125 150 1751
10
100tÁñÓËËòtËtÁñÓÒòtØ
Figure 12.Figure 12.Figure 12.Figure 12. Gate-emitter threshold voltage as aGate-emitter threshold voltage as aGate-emitter threshold voltage as aGate-emitter threshold voltage as afunction of junction temperaturefunction of junction temperaturefunction of junction temperaturefunction of junction temperature(I†=0.29mA)
TÎ, JUNCTION TEMPERATURE [°C]
V•ŠñÚÌò, GATE-EMITTER THRESHOLD VOLTAGE [V]
0 25 50 75 100 125 150 1752
3
4
5
6typ.min.max.
7
IKW20N60H3High speed switching series third generation
Rev. 1.1 2010-02-01
Figure 13.Figure 13.Figure 13.Figure 13. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of collector currentfunction of collector currentfunction of collector currentfunction of collector current(ind. load, TÎ=175°C, V†Š=400V,V•Š=15/0V, R•=14,6Â, test circuit in Fig.E)
I†, COLLECTOR CURRENT [A]
E, SWITCHING ENERGY LOSSES [mJ]
4 8 12 16 20 24 28 32 36 400.0
0.5
1.0
1.5
2.0
2.5
3.0EÓËËEÓÒ*EÚÙ*
Figure 14.Figure 14.Figure 14.Figure 14. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of gate resistorfunction of gate resistorfunction of gate resistorfunction of gate resistor(ind. load, TÎ=175°C, V†Š=400V,V•Š=15/0V, I†=20A, test circuit in Fig. E)
R•, GATE RESISTOR [Â]
E, SWITCHING ENERGY LOSSES [mJ]
5 10 15 20 25 30 35 40 45 500.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00EÓËËEÓÒ*EÚÙ*
Figure 15.Figure 15.Figure 15.Figure 15. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of junction temperaturefunction of junction temperaturefunction of junction temperaturefunction of junction temperature(ind load, V†Š=400V, V•Š=15/0V, I†=20A,R•=14,6Â, test circuit in Fig. E)
TÎ, JUNCTION TEMPERATURE [°C]
E, SWITCHING ENERGY LOSSES [mJ]
0 25 50 75 100 125 150 1750.00
0.25
0.50
0.75
1.00
1.25EÓËËEÓÒ*EÚÙ*
Figure 16.Figure 16.Figure 16.Figure 16. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of collector emitter voltagefunction of collector emitter voltagefunction of collector emitter voltagefunction of collector emitter voltage(ind. load, TÎ=175°C, V•Š=15/0V, I†=20A,R•=14,6Â, test circuit in Fig. E)
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
E, SWITCHING ENERGY LOSSES [mJ]
200 250 300 350 400 4500.00
0.25
0.50
0.75
1.00
1.25
1.50EÓËËEÓÒ*EÚÙ*
8
IKW20N60H3High speed switching series third generation
Rev. 1.1 2010-02-01
Figure 17.Figure 17.Figure 17.Figure 17. Typical gate chargeTypical gate chargeTypical gate chargeTypical gate charge(I†=20A)
Q•Š, GATE CHARGE [nC]
V•Š, G
ATE-EMITTER VOLTAGE [V]
0 20 40 60 80 100 120 1400
2
4
6
8
10
12
14
16120V480V
Figure 18.Figure 18.Figure 18.Figure 18. Typical capacitance as a function ofTypical capacitance as a function ofTypical capacitance as a function ofTypical capacitance as a function ofcollector-emitter voltagecollector-emitter voltagecollector-emitter voltagecollector-emitter voltage(V•Š=0V, f=1MHz)
V†Š, COLLECTOR-EMITTER VOLTAGE [V]
C, CAPACITANCE [pF]
0 10 20 3010
100
1000
CÍÙÙCÓÙÙCØÙÙ
Figure 19.Figure 19.Figure 19.Figure 19. Typical short circuit collector current as aTypical short circuit collector current as aTypical short circuit collector current as aTypical short circuit collector current as afunction of gate-emitter voltagefunction of gate-emitter voltagefunction of gate-emitter voltagefunction of gate-emitter voltage(V†Šù600V, start atTÎ=25°C)
V•Š, GATE-EMITTER VOLTAGE [V]
I†ñ»†ò, SHORT CIRCUIT COLLECTOR CURRENT [A]
10 12 14 16 18 2050
100
150
200
250
300
Figure 20.Figure 20.Figure 20.Figure 20. Short circuit withstand time as a functionShort circuit withstand time as a functionShort circuit withstand time as a functionShort circuit withstand time as a functionof gate-emitter voltageof gate-emitter voltageof gate-emitter voltageof gate-emitter voltage(V†Šù600V, start at TÎù150°C)
V•Š, GATE-EMITTER VOLTAGE [V]
tȠ, SHORT CIRCUIT W
ITHSTAND TIM
E [µs]
10 11 12 13 14 150
3
6
9
12
15
9
IKW20N60H3High speed switching series third generation
Rev. 1.1 2010-02-01
Figure 21.Figure 21.Figure 21.Figure 21. IGBT transient thermal impedanceIGBT transient thermal impedanceIGBT transient thermal impedanceIGBT transient thermal impedance(D=tÔ/T)
tÔ, PULSE WIDTH [s]
ZÚÌœ†, TRANSIENT THERMAL IMPEDANCE [K/W
]
1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i: rÍ[K/W]: Í[s]:
1 0.07041042 9.6E-5
2 0.3070851 6.8E-4
3 0.3198984 0.01084623
4 0.1871538 0.06925485 τ
Figure 22.Figure 22.Figure 22.Figure 22. Diode transient thermal impedance as aDiode transient thermal impedance as aDiode transient thermal impedance as aDiode transient thermal impedance as afunction of pulse widthfunction of pulse widthfunction of pulse widthfunction of pulse width(D=tÔ/T)
tÔ, PULSE WIDTH [s]
ZÚÌœ†, TRANSIENT THERMAL IMPEDANCE [K/W
]
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i: rÍ[K/W]: Í[s]:
1 0.4398 1.3E-4
2 0.6662 1.1E-3
3 0.4734 7.1E-3
4 0.3169 0.04629 τ
Figure 23.Figure 23.Figure 23.Figure 23. Typical reverse recovery time as aTypical reverse recovery time as aTypical reverse recovery time as aTypical reverse recovery time as afunction of diode current slopefunction of diode current slopefunction of diode current slopefunction of diode current slope(Vç=400V)
diŒ/dt, DIODE CURRENT SLOPE [A/µs]
tØØ, REVERSE RECOVERY TIM
E [ns]
600 800 1000 1200 1400 160050
100
150
200
250TÎ=25°C, IF = 10ATÎ=175°C, IF = 10A
Figure 24.Figure 24.Figure 24.Figure 24. Typical reverse recovery charge as aTypical reverse recovery charge as aTypical reverse recovery charge as aTypical reverse recovery charge as afunction of diode current slopefunction of diode current slopefunction of diode current slopefunction of diode current slope(Vç=400V)
diŒ/dt, DIODE CURRENT SLOPE [A/µs]
QØØ, REVERSE RECOVERY CHARGE [µC]
800 900 1000 1100 1200 1300 1400 1500 16000.00
0.25
0.50
0.75
1.00
TÎ=25°C, IF = 10ATÎ=175°C, IF = 10A
10
IKW20N60H3High speed switching series third generation
Rev. 1.1 2010-02-01
Figure 25.Figure 25.Figure 25.Figure 25. Typical reverse recovery current as aTypical reverse recovery current as aTypical reverse recovery current as aTypical reverse recovery current as afunction of diode current slopefunction of diode current slopefunction of diode current slopefunction of diode current slope(Vç=400V)
diŒ/dt, DIODE CURRENT SLOPE [A/µs]
IØØ, REVERSE RECOVERY CURRENT [A]
800 900 1000 1100 1200 1300 1400 1500 16006
8
10
12
14
16
18TÎ=25°C, IF = 10ATÎ=175°C, IF = 10A
Figure 26.Figure 26.Figure 26.Figure 26. Typical diode peak rate of fall of reverseTypical diode peak rate of fall of reverseTypical diode peak rate of fall of reverseTypical diode peak rate of fall of reverserecovery current as a function of dioderecovery current as a function of dioderecovery current as a function of dioderecovery current as a function of diodecurrent slopecurrent slopecurrent slopecurrent slope(Vç=400V)
diŒ/dt, DIODE CURRENT SLOPE [A/µs]
dIØØ/dt, diode peak rate of fall of IØØ [A/µs]
800 900 1000 1100 1200 1300 1400 1500 1600-1400
-1200
-1000
-800
-600
-400
-200
0TÎ=25°C, IF = 10ATÎ=175°C, IF = 10A
Figure 27.Figure 27.Figure 27.Figure 27. Typical diode forward current as aTypical diode forward current as aTypical diode forward current as aTypical diode forward current as afunction of forward voltagefunction of forward voltagefunction of forward voltagefunction of forward voltage
VŒ, FORWARD VOLTAGE [V]
IŒ, FORWARD CURRENT [A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.50
5
10
15
20
25
30
35
40TÎ=25°CTÎ=175°C
Figure 28.Figure 28.Figure 28.Figure 28. Typical diode forward voltage as aTypical diode forward voltage as aTypical diode forward voltage as aTypical diode forward voltage as afunction of junction temperaturefunction of junction temperaturefunction of junction temperaturefunction of junction temperature
TÎ, JUNCTION TEMPERATURE [°C]
VŒ, FORWARD VOLTAGE [V]
0 25 50 75 100 125 150 1751.00
1.25
1.50
1.75
2.00
2.25
2.50I†=5AI†=10AI†=20A
11
IKW20N60H3High speed switching series third generation
Rev. 1.1 2010-02-01
12
IKW20N60H3High speed switching series third generation
Rev. 1.1 2010-02-01
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IKW20N60H3High speed switching series third generation
Rev. 1.1 2010-02-01
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