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P.1 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
Innovative E-Beam Applications for
Advanced Technology Nano-defect Era
SEMATECH Symposium Taiwan 2012
Ray Li
Senior Manager
Technical Marketing
Hermes Microvision Inc.
October 18th, 2012
P.2 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
○ Fundamental Application of E-Beam Wafer Inspection
○ Innovative Application of E-Beam Inspection
- Combination of CDU Measurement and Defect Detection
- Die-to-database Inspection
- EUV Mask Pattern Inspection
- Potential Application for TSV
○ EBI’s Future Technology
Outline
P.3 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
○ Fundamental Application of E-Beam Wafer Inspection
○ Innovative Application of E-Beam Inspection
- Combination of CDU Measurement and Defect Detection
- Die-to-database Inspection
- EUV Mask Pattern Inspection
- Potential Application for TSV
○ EBI’s Future Technology
Outline
P.4 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
Fundamental Application of E-Beam Wafer Inspection
VC (Voltage Contrast) Defect : Electrical related
Physical Defect : Pattern or material related
FEOL
MOL
BEOL
Defect detection with die-to-die / cell-to-cell comparison
… …
…
What E-beam can do more?
P.5 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
Potential Application for E-Beam
CD SEM
Optical
Inspection
Review
SEM
E-Beam
VC Defect
Physical Defect
CDU OVL
Monitor
Hotspot
Inspection
ADC
Auto
Review
OPC
Verification
PWQ
Defect
Inspection
Edge Die
Monitor
P.6 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
○ Fundamental Application of E-Beam Wafer Inspection
○ Innovative Application of E-Beam Inspection
- Combination of CDU Measurement and Defect Detection
- Die-to-database Inspection
- EUV Mask Pattern Inspection
- Potential Application for TSV
○ EBI’s Future Technology
Outline
P.7 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
○ Fundamental Application of E-Beam Wafer Inspection
○ Innovative Application of E-Beam Inspection
- Combination of CDU Measurement and Defect Detection
- Die-to-database Inspection
- EUV Mask Pattern Inspection
- Potential Application for TSV
○ EBI’s Future Technology
Outline
P.8 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
Combination of CDU Measurement and Defect Detection
Small physical defects sometimes show dependence on
the CD of some important structures. (C. Boye et al, ASMC 2012)
CDU (spacer THK)
Contour map
Defect count
Contour map
(a). # of Epi-grow Defect vs.
Normalized Thickness of Spacer (SRAM)
1
10
100
1000
0.50 0.60 0.70 0.80 0.90 1.00 1.10
Normalized Thickness of Spacer
# o
f E
pi-
Gro
w D
efe
ct
(lo
g10)
Reverse
dependency
observed
E-beam
Inspection
Defect
Inspection
CDU
Measurement
Value added application !
P.9 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
○ Fundamental Application of E-Beam Wafer Inspection
○ Innovative Application of E-Beam Inspection
- Combination of CDU Measurement and Defect Detection
- Die-to-database Inspection
- EUV Mask Pattern Inspection
- Potential Application for TSV
○ EBI’s Future Technology
Outline
P.10 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
(O. Patterson et al, SPIE 2012)
Die-to-database (Comparison of Wafer and Design Data)
Data collection process Defect deposition process
SupernovaTM + EBI
D2DB E-beam Inspection
Inspection Methodology
For Pattern Fidelity Evaluation
SupernovaTM defect analysis
•Defect binning by pattern
•Defect binning by severity
•Defect maps output
•Multi-layer GDS D2DB inspection
•Defect list with images
P.11 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
Die-to-database (Comparison of Wafer and Design Data)
(O. Patterson et al, SPIE 2012)
• Short loop PWC wafer.
• Inspected after liner/seed, to capture fill issues.
• Hot spot scan found both shorts and opens.
• Inspect after Cu CMP to best capture shorts.
Lines have pinched off
with liner and seed. The
copper plating will be
blocked resulting in a
void.
Defect count by die for
type 1 (killer) and type 2
(maybe killer) defects.
Modulated die are in
boxes.
Application 1: M2 Liner
killer
maybe killer
P.12 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
Die-to-database (Comparison of Wafer and Design Data)
(O. Patterson et al, SPIE 2012) Application 2: Via Etch
• Short loop modulated wafer inspected. (1 cm2 of a die at the
edge of the process window)
• The wafer was coated with liner to keep it from charging.
• 100s of assist features were detected.
• A hot spot inspection was used to validate new masks with
updated OPC.
Early detection of these type failures can save months
off the ramp of a new product !
Defect map for
scanned chip
Map showing the
location of printing
assist features on
the reticle field
P.13 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
○ Fundamental Application of E-Beam Wafer Inspection
○ Innovative Application of E-Beam Inspection
- Combination of CDU Measurement and Defect Detection
- Die-to-database Inspection
- EUV Mask Pattern Inspection
- Potential Application for TSV
○ EBI’s Future Technology
Outline
P.14 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
EUV Mask Pattern Inspection
(T. Shimomura et al, SPIE 2012)
4 types of program defect for evaluation
E-beam inspection system has 16nm edge defect detection
sensitivity on 64nm HP EUV mask.
No defect produced
16nm defect detected
P.15 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
EUV Mask Pattern Inspection
(T. Shimomura et al, SPIE 2012)
• Need further improvement of patterning process for 64nm HP EUV mask.
• Need various technology to improve throughput, e.g. Lightning ScanTM
• Throughput
1250um x 1250um
6 min 46 sec
10cm x 10cm
31 days
Inspectability of 64nm HP pattern
P.16 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
EUV Mask Pattern Inspection
Summary of 16nm HP EUV masks evaluation :
1. EBI system has capability to capture 16nm edge defects on 64nm
EUV mask.
2. No significant damage to susceptible Ru capped Mo/Si multilayer.
(T. Shimomura et al, SPIE 2012)
Note from HMI :
E-beam inspection (DD/D2DB) technology for EUV pattern mask and
NIL template is under evaluation. So far no sensitivity concern,
throughput new technology is parallel developing.
Investigation of bump type defects creation
No significant increase of defects
after combination of e-beam
bombardment and cleanings.
P.17 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
○ Fundamental Application of E-Beam Wafer Inspection
○ Innovative Application of E-Beam Inspection
- Combination of CDU Measurement and Defect Detection
- Die-to-database Inspection
- EUV Mask Pattern Inspection
- Potential Application for TSV
○ EBI’s Future Technology
Outline
P.18 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
• TSV Open/Leakage detection by VC
• Thin Dielectric Film Remains by Gray Level Comparison
Potential TSV Application by E-beam Inspection
Leakage
Isolation
Liner
Oxide Remain
at bottom of
etched hole
TSV Open
Residue
Glass Carrier wafer
e
Feasibility study is under way !
P.19 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
○ Fundamental Application of E-Beam Wafer Inspection
○ Innovative Application of E-Beam Inspection
- Combination of CDU Measurement and Defect Detection
- Die-to-database Inspection
- EUV Mask Pattern Inspection
- Potential Application for TSV
○ EBI’s Future Technology
Outline
P.20 Toward Yield Excellence 漢民微測 © Hermes Microvision Inc. All rights reserved. Proprietary and Confidential.
Future
Technology
Projection
eBeam
Multiple
eBeam
Multi-column
Multi-objective
lens
Multi-column
Single objective
lens
Pros High scan rate With-in full die
application
Easy control
symmetry beam Small volume
Cons
Interaction
high, low SNR,
low resolution
Asymmetrical
control,
non-uniform
Large volume Asymmetrical
control
Resolution Moderate Moderate High High
Throughput Fastest Faster Fast Faster
EBI’s Future Technology
HMI is working on multi-axis technology for future need !