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8/7/2019 Inorganic Polymer
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Group 1:
Kien Thi Thuy Linh Nguyen Thi Yen Nhi Nguyen Hoang AnhLe Trung Hieu
Teacher:
Luu Thuy Quyen
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Outline
Introduction Cement Silicates
Asbestos Carbon C
eramics Superconductors Zeolite
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S ilicon dioxide
The repeating general structural of rock, sand, dirt, SiO2 can be described as a three-dimensional network
constructed from tetrahedral cells, with four oxygen atoms
surrounding a silicon atom
Figure . S tructure of S iO2
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Two forms: Amorphous Quartz
S ilicon dioxide
Figure . Network of S iO2
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G lass
G lass is amorphous silicate, usual mixedimpurities to control desire property.
G lass is transparent.Thermal and electric conduction depend onimpurity levels.
Thermal stable and high hardness.
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G lass is made by heating silica sand and powder additives in aspecified manner
M elting point of S iO2 : 2.000 C (3.632 F). In processing of G lass, addition of compound to reduce Tm.
Additives are usual : Na2C
O3; K2C
O3.C
aC
O3 to recover dissoluble of Na2 C O3
G lass
Form oxides which become
intergrate into the S iliconstructure
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G lass
Why Glass is amorphous ??? G lass: short- range order & long-range disorder .
The impurities encourage the glass to cool to an amorphousstructure since the different-size of metal ions
Figure .S
tructure of G
lass
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G lass
Silica sand 72% Soda Ash 15%
Lime 9%Other 4%
P r tag f I gr i ts i G lass
sili a sas a ashlim
th r i gr i ts72%
15%4%
9%
Figure . Ingredient of S oda-lime glass
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M ixing and weightinginto proper proportion
Send to furnaces inhoppers
operated by natural gas heat the mixture at 1300-
1600 degrees C elsius into
soften or molten state
Glass
Figure . Process of manufacture glass
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G lassMoldin --- molten glass flows to forming machine to moldinto desire shapes
Annealin --- reheating the glass in an oven to ensure even cooling of glass for strengthening of the products
Coolin p ocess --- C ool for 30 min to an hour for safe tohandle.
G lass p oducts are then decorated, inspected again andfinally packaged and shipped to our customers.
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Applications o G lass
Figure . Application of G lass
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Q ua tz Is a kind of silicon crystallizes, a major components of
ingenous rocksThree mainly forms- quartz, tridymite,cristobalite. Depend ontemp, it exist in different formsQuartz exhibitz an important property called the piezoelectriceffect.
Figure . Quartz
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The unit cell of crystal silicon dioxide
-
+
+
-
+
-
+ = S ilicon
- = Oxygen
By definition : A unit cell is the s mallest parallele pi ped(6 sided parallelo gram) that will descri be the molecule .
Q ua tz
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-
+
+
-
+
-
U nit C ell at Rest-
+
+
-
+
-
Ne utral Charg e
U nit C ell U nder M echanicalC ompression ( pushing force):Electrical polarity as shown
-
+
+--
U nit C ell U nder mechanicalTension ( pulling force):Electrical polarity reverses.
+ + +
- - -
+ + +
- - -
+
Q ua tz
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-
+
+
-
+
-
-
+
+
-
+
-
+ + +
- - -
U nit C ell at Rest
Ne utral Charg e N ot caus e e l e ctric ene rgy
2 compression forces inopposite directions...
Will also r e sult i n e l e ctrical ene rgy!
Q ua tz
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Application o Q ua tz
Figure . Application of Quartz
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S ilicon c ips1958,"The C hip" was invented by both Jack
Kilby and Robert Noyce.
It is an intergrate circuit that is design to
work for an funtion or diferent purpose
Figure . S ilicon chips
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S ilicon c ips
Figure . Process of manufacture C hips
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S ilicon c ips
S iO2 + C S i + CO2
D esign Wafer:
I t is pure silic, purity
above 99,9999%
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S ilicon c ips
Treat Wafer Wet process: C lean wafers bychemical solutions. Ex:AP M (NH4OH/H2O2/H2O);HP M
(HC l/H2O2/H2O)
Oxidation: formthin layer of S iO2 ( 1-2nm)
Ion implantation :V ary the impurities.Ex: ion As to form
n+ layer
P hotolithography Sputtering
Anealing Treat surface
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Process of manufacture chip is multistepsThe purity is above 99,9999% or impurity
level is 1ppb
S ilicon c ips