Integration of pre-fabricated ultra-high density (1000 nF/mm2) capacitor films (50-75 microns) onto wafers and panels

Himani Sharma, P. M. Raj* (Presenting author), Parthasarathi Chakraborti, Teng Sun, Nathan Neuhart, Kamil-Paul Rataj^, Saumya Gandhi+, Udo Merker&, Frank

Stepniak+, Matt Romig+, Mitch Weaver, Naomi Lollis#, and Rao R. Tummala

3D Systems Packaging Research Center, Georgia Institute of Technology, Atlanta, USA

^ - H.C.Starck GmbH, Im Schleeke 78-91, 38642 Goslar/Germany

+ - Texas Instruments, 13020 TI Blvd, Dallas, TX 75243

# A.V.X. Corporation, One AVX Blvd, Fountain Inn, SC 29644

& Heraeus Inc., Leverkusen, Germany.

Slide 2

CONFIDENTIAL

Outline

Introduction to GT Packaging Research Center

Capacitor needs for consumer, telecom and automotive industry

Capacitor integration strategies

Tantalum film capacitors on silicon– Capacitor Integration

– Capacitor performance

– Reliability studies

Integrated voltage regulator (IVR) with capacitors and inductors

Slide 3

CONFIDENTIAL

Packaging Research at Georgia Tech

3

D&D Test Vehicles Computing &

Communications Electronics

1. RF (WLAN & LTE)2. IVR3. 5G4. 2.5D Glass

Interposer Sensing Electronics

5. Radar, Camera with Glass Fan-out

High-power & High-tempElectronics

6. High-power D&D7. High-temperature

D&D

1. Design Electrical: signal & power

integrity Mechanical: warpage &

reliability Thermal: Cu TPVs,

evaporation and condensation

2. Electronic Substrates High-temp TPVs 1µm RDLs TPV & RDL reliability

8. High-temp Electronic Materials

High-temp polymers High-temp passives High-temp interconnections High-temp encapsulants

6. Devices GaN, SiC, SiGe, MEMS and

sensors OEIC, RF ICs, and digital ICs

3. Photonic Substrates Single- and multi-mode Optical vias WG and turning structures Fiber coupling

7. High-power/High-speed

Switch and gate driver Metal Insulator substrates Embedded power chips &

passives Sintered-Cu interconnection

5. Interconnects & Assembly

SLID bonding Low-temp Cu-Cu

interconnects High-throughput TCB Direct-SMT of Glass BGA Pre-applied underfill

4. Components Capacitors Inductors EMI shields PA thermal

Diplexers Antennas Wireless power

Slide 4

CONFIDENTIAL

Why Collaborate With Georgia Tech PRC

No. 1 Academic Leader in IC & Systems Packaging

Technical Vision Consistent with Market Needs

Co-development of Panel-based Glass Packaging with 50 Global Researchers, Developers, Manufacturers and users

Explore and Develop Advanced Systems Packaging Technologies Beyond Industry’s 3-year Horizon

Seamless from R&D, Prototype, and Tech Transfer Enabling Commercialization

Track Record of Technology Breakthroughs

Only 300mm Cleanroom Panel Facility in the Academic World

> 50 Person Co-development Team: Full-time Researchers, Manufacturing Industry Partners, Graduate Engineers, Faculty and On-campus Industry Engineers

Leverage: $8M/100k

4

Slide 5

CONFIDENTIAL

Packaged RF ICsSMT Filters

Discrete Modules

0.5 mm

PWB

100-200 µm

3D IPACMemory Logic

30 - 100μm

RF

PA SW LNA

RF INTERFACE CHIP

0.3 mm

EMBEDDED ACTIVES

ICC CL

C CIC

Low-loss organic core

Siz

e

Performance

Ultra-miniaturized Power and RF modules with Passive-Active Integration

Slide 6

CONFIDENTIAL

Vo

ltag

e

1000

100

10

Capacitor Needs

Frequency10 kHz 100

MHz1 MHz

Consumer

AutomotiveLow Power

Integrated VR

AutomotiveHigh Power

Slide 7

CONFIDENTIALCapacitor Technologies

Slide 7

Cap. Density 1 µF/mm2

Thickness 50-800 µm

Operating Frequency

100 Hz – 1 MHz

Leakage current ~0.01 µA/µF

Packaging SMD, thin-film

Cap. Density 3 µF/mm2

Thickness 200-800 µm

Operating Frequency

100 Hz – 0.3 MHz

Leakage current

~0.01 µA/µF

Packaging SMD

Cap. Density 1 µF/mm2

Thickness ~1000 µm

Operating Frequency

100 Hz –0.3 MHz

Leakage current

~0.01 µA/µF

Packaging SMD

Cap. Density >0.5 µF/mm2

Thickness 100 µm

Operating Frequency

100 Hz – 1 MHz

Leakage current

~0.1 µA/µF

Packaging thin-film

MLCCTantalum

Si Trench Etched Al

Helsinki

iPDIA

Slide 8

CONFIDENTIAL

Ta foil

Silicon-Integrated High-Density Capacitors

Anode

Cathode

Anode

Cathode

Component Manufacturer (Ex. AVX)

TI Wafer

Use standard infrastructure with “next-generation” standard materials

Silicon-Integrated High-Density Inductors

Use standard infrastructure with “next-generation” standard materials

Component Manufacturer (Ex. TDK) TI Wafer

High Thermal conductivity dielectric

Prepattern magnetic core

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CONFIDENTIAL

Wafer or substrate

Metal

200 micron conducting path 50 micron conducting path

CP/Carbon/Silver paste/lead frame Minimal interfaces;Direct metallization of CP with Cu/Au

100 milliohms x microfarad 20-50 milliohms x microfarad

1-5 MHz >10 MHz

Bulky Ta Vs Silicon-Integrated Ta Film Capacitors

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CONFIDENTIAL

100 nm/ 200 nm II. Lamination on Si

Vacuum laminator

III. Planarization

I. Passivation

IV. Via drill

a. Desmearing

b. Electroless Cu seed layer

c. Photolithography

d. Electroplating

Capacitor foil

Capacitor Integration scheme

V. Metallization

Slide 12

CONFIDENTIALDemo. of Capacitor Integration

• Anodization voltage- 20 V at 85oC

ABFPorous Ta

Ta foil

ABF

64 µm

10 µm

• Sintered tantalum electrodes on tantalum films

• Laminated onto Silicon

• Via connections with laser drilling, metallization

Slide 13

CONFIDENTIAL

Supply Chain Involvement

Ta foil

Anode Cathode

AnodeCathode

Component Manufacturer (Ex. AVX)

Wafer or substrate

Power modules with passive-active integration

Slide 14

CONFIDENTIAL

Capacitor Performance

~1µF/mm2 obtained wiuth:

• 80 KA grade with thin dielectric thickness (8V/10V)

• 150 KA with thick dielectric thickness (12V)

200k 400k 600k 800k 1M0.0

2.0µ

4.0µ

6.0µ

8.0µ

10.0µ

12.0µ

14.0µ

16.0µ

18.0µ

20.0µ

Ca

pa

cit

an

ce

(F

)

Frequency (Hz)

Slide 15

CONFIDENTIAL

Reliability of passivated capacitors

1.14 µF/mm2

1.40 µF/mm2

Parlyene thickness- 200 nm

65°C/95% RH, 500 hrsTCT conditions

1.15 µF/mm2

1.34 µF/mm2

• Increase in capacitance observed post 500 hr of thermal cycling

Slide 16

CONFIDENTIAL

0

0.5

1

1.5

2

2.5

0 2 4 6 8 10 12 14

Cap

acit

an

ce D

en

sit

y a

t 1

MH

z

(μF/

mm

2)

Anodization Voltage (V)

Before… After…

Reliability of Passivated Capacitors

150 kA-8V

80 kA-8V

60 kA-8V

80 kA-10V 150 kA-12V

65°C/95%RH 500 hours

• All foils passed 65/95 for 500 hours

• Capacitance comparable or higher after thermal and moisture test

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CONFIDENTIAL

• Discretes • Embedded ICs

• on-chip • 3D Packages

Inductors • Ferrites; • Embedded or SMDs

• Thinfilminductors

• Thinfilminductors

Capacitors • MLCCs • MLCCs • Trench capacitors

• Thinfilmcapacitors

EFFICIENCY

POWER HANDLING

SIZE

COST

MANUFREADINESS

Competitiveness of GT Approach with Embedding Si Integrated Ta Capacitors

IC

CAPACITOR

INDUCTOR

Slide 18

CONFIDENTIAL

Summary

Pioneered a breakthrough capacitor integration technology on wafers and packages:• Unlimited capacitance density on Silicon• Low cost – cheaper than traditional discrete passives• Extensible to high voltages• Extensible to high frequencies

Created an ecosystem of supply chain involving:• Material suppliers,• Component manufacturers• End-users

Extending this baseline technology to: • High-voltage power modules: Ex. Automotive• Automotive battery chargers• Integrated voltage regulators