Intra Optical Data Center Interconnection Session 2 ...s3.amazonaws.com/JuJaMa.UserContent/756ec7a3-4435-4c59-861… · integrating 8 IQ modulators and the other passive Tx building

Networks and Optical Communications group – NOC

Intra Optical Data Center Interconnection

Session 2: Debating Intra-DC solutions

and Photonic Integration approaches

Co-Organizer/Presider/Session Chair:

Dr. Ioannis Tomkos

Ioannis Tomkos ([email protected]) - AIT

2

ODCI 2016, Nice, France

Session 2 Speakers & Panelists - I

Chris Pfistner, Vice President, Datacom Product Line Management, Lumentum

• Chris joined the company in October 2015, bringing over 20 years of experience in Marketing,

Sales, and Product Line Management in the global fiber optic module and systems market. Prior

to Lumentum, Chris managed Finisar’s product management team for optical transceivers.

Before Finisar he built the transceiver business at NeoPhotonics. He was also a co-founder of

Terawave, and held marketing and product management positions at AFC and Pirelli. During his

career Chris has developed and launched several disruptive products based on innovative

technologies and turned them into successful businesses. Chris holds Ph.D. and MS. degrees in

Applied Physics from the University of Berne, in Switzerland.

Brad Booth, Principal Engineer, Microsoft

• Brad Booth is a long-time leader in Ethernet technology development and standardization,

currently heading up the 25/50G Ethernet Consortium and the Consortium for On-Board Optics

(COBO). At Microsoft, he leads the development of hyperscale interconnect strategy for

Microsoft’s cloud datacenters. He is also the founder and past Chairman of the Ethernet

Alliance. Brad was previously a Distinguished Engineer in the Office of the CTO at Dell

Networking. He has also held senior strategist and engineering positions at Applied Micro, Intel,

and PMC-Sierra. He was listed as one of the 50 most powerful people in networking by Network

World magazine.

mailto:[email protected]


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Session 2 Speakers & Panelists - II

James Regan, CEO, Effect Photonics

• James has over 30 years of experience in the photonic component business, in product

development, marketing, sales and general management in building successful

businesses within large companies (Nortel, JDSU) and start-ups (Agility

Communications).

Silvio Abrate, Head of Applied Photonics, ISMB

• Silvio Abrate is head of the Applied Photonics research group at ISMB and manager

of the PhotonLab research facility, held in cooperation with Politecnico di Torino.

Mauro Macchi, Director SP EMEAR, Cisco

• Mauro’s 20+ years career in telecom industry includes Engineering and Product

Management roles in Pirelli, Cisco and Juniper Networks. He is currently leading

EMEAR Business Overlay team for IP, Optical and Data Center technologies.



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Why Photonic Integration?

Why integration? Look back at the electronics!

EAI 580 patch panel, Electronic Associates, 1968 Whirlwind, MIT, 1952

Today’s state of computing is based on:

Integration and scaling of the logic functions (CMOS electronics)

Integration and scaling of the interconnects (PCB technology & assembly)

For optical interconnects, this resembles:

Electro-optical integration and scaling of transceiver technology

Integration of optical connectivity and signal distribution

Pictures taken at:



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What is possible with InP today?

Fully integrated monolithic 8-channel OS- and AO-OFDM Tx InP PIC fabricated !

OS-OFDM Tx PIC AO-OFDM Tx PIC

EU project ASTRON

Tx PIC

presentation

at ECOC 2016!

ASTRON designed,

fabricated and

characterized fully

integrated monolithic

8-channel OS-/AO-

OFDM InP

transmitter PIC, for

the first time,

integrating 8 IQ

modulators and the

other passive Tx

building blocks (8-

port AWG, 1x8

splitter/combiner) on

a single PIC

Source: EU project ASTRON (partner HHI)



6


Comparison of InP and SiPh technologies

The development of the SiPh technology has helped to drive large-scale

manufacturing of PICs at low costs, since they can leverage highly developed

fabrication processes from the microelectronics industry.

However, some analysts claim that InP platforms can, depending on yields, have

production costs equal to or lower than SiPh, for the production volumes

expected for telecom and DC applications.

The table summarizes the pros and

cons of InP and silicon photonics

for PIC manufacturing

Silicon photonics also has also the

added advantage compared to InP

that it can be integrated with

electronic Ics, using 2.5D and 3D

packaging, thus saving cost,

footprint, and power.



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Factors affecting PIC costs

The PIC market is growing at a phenomenal rate as it provides

significant improvements in system size, power consumption,

reliability and cost.

Many factors can affect the projected costs of a new technology,

among which are:

• the scale of production (e.g. annual production volume),

• the manufacturing location (e.g. the difference between producing in the USA

and East Asia),

• the cost and size of wafers,

• the maturity of the manufacturing process, and most importantly

• the production yields achievable for each technology



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Relative cost per PIC

SiP can support larger wafers compared to InP and therefore, just for that, can result in lower cost PICs

Current InP SotA The simple relation between

achievable number of PICs per wafer

and PIC size:

It is obvious that the decreasing

number of available PICs per wafer,

with increasing PIC size, is

accompanied by increasing costs.

The relative cost with decreasing

number of PICs per wafer, for

different substrate sizes and while

assuming 100%(!) on-wafer yield is

also shown. The cost calculation refers

to a single MZ modulator fabricated

on a 3-inch InP wafer as a reference

(i.e. on-wafer cost of a single MZM =

1).

This cost will be reduced by a factor

of 2 if a 4-inch InP substrate is used

instead of a 3-inch one, and even more

with larger substrate sizes. Source: EU project ASTRON (partner HHI)



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Evolution of chip complexity for InP-

and SiPh- based ICs

In the figure we can observe, the

evolution of chip complexity for InP-

based IC (blue) and SiPh-based IC

without laser (red) and with

heterogeneously integrated lasers

(green)

The problem of laser integration on

silicon stems from the fact that

silicon has an indirect bandgap and

hence is a very inefficient light

emitter.

A possible energy-efficient and cost-

effective solution is wafer bonding of

III–V materials that can be wafer

bonded to the silicon photonic chip

to co-fabricate lasers that are

lithographically aligned to the silicon

waveguide circuit.

Source: M. J. R. Heck et al. ‘Hybrid silicon photonic

integrated circuit technology,’ IEEE J. Sel. Topics in

Quantum Electronics, 2013



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Integration approaches

Photonic integration strategies can be divided into three main categories, each of

them having its own pros and cons.

• In hybrid integration, multiple single-function devices are assembled into a single package,

sometimes with associated ICs, and inter-connected to each other by electronic and/or optical

couplings internal to the package. Several problems may arise from the use of this integration

technology: alignment tolerances of 1-2microns are sometimes necessary; different materials for

different components may have different optical, mechanical and thermal characteristics, etc.

• In semi-hybrid integration, specialized regions are grown in appropriate materials over a

common substrate (normally silicon).

• Finally, in monolithic integration, devices are built into a common substrate, providing

significant packaging consolidation, testing simplification, reduction in fibre couplings,

improved reliability and maximum possible reduction in space and power consumption per

device.

In hybrid integration, the process steps whose yields have the biggest impact on

cost are mainly the backend assembly steps, whereas in monolithic integration it

is the frontend processes that have a greater impact. In principle significant

savings can be expected when moving from hybrid integration to monolithic

integration, provided that the process yield can be maintained high.



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Integration Roadmap for SiP

Cost-advantages through further integration

Cost of optics determines the application scope

Silicon photonics versatile and cost-efficient

Si: indirect bandgap additional material for laser sources required

Today: external laser source must be coupled expensive and high losses

Already demonstrated: hybrid III-V–on–silicon integration (on-chip)

DIMENSION breakthrough: processing of III-V devices at silicon wafer level

Hybrid

State-of-the-art

Semi-Hybrid

demonstrated

Monolithic

III-V on silicon integration

Source: EU project DIMENSION (partner IBM)


Directly Modulated Lasers on Silicon

www.dimension-h2020.eu


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DIMENSION approach

Combining BiCMOS electronics, photonics and III-V on a new technology platform for

monolithic electro-optical integration

Integrated devices, with CMOS, photonic and III-V functionality at the cost of silicon volume

fabrication

Concept IP protected

Si CMOS wafer at front-end level

including silicon photonics

Bonding a III-V photonic membrane onto

the first dielectric oxide (ILD1)

Structuring of the III-V active photonics

Metal interconnection of the III-V

with the CMOS underneath




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Concept and Main Objectives

Technology platform for monolithic integration of BiCMOS electronics with Si- and

III-V photonics:

• Bonding or growth of ultra-thin (<500 nm) III-V quantum well stack on the

FEOL (Bi)CMOS

• Cost-effective embedding of high-quality III-V structures in (Bi)CMOS BEOL

• Efficient optical coupling between silicon and III-V layer based on adiabatic

mode conversion with high modal overlap for low power consumption and

high-speed modulation

• Laser feedback and passive optical structures in silicon layer

DIMENSION implementation

of III-V materials in between

the front-end-of-line and the

back-end-of-line of a BiCMOS

process




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Issues to be discussed/debated

Material system: InP vs. SiP vs. ???

Integration approaches: monolithic vs. hybrid?

Packaging approaches?

Wavelength of operation: 850nm vs. 1310nm vs. 1550nm?

Laser type: VCSELs vs. DFBs vs. ???

Direct vs. external modulation?

The road to 400G and then to 800G/1600G?

Modulation formats: PAM vs. DMT vs. QAM?

Direct vs. coherent detection?

Extend of use of DSP?

Optical switching in the DC?

Others???



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Session 2 Speakers & Panelists - I

Chris Pfistner, Vice President, Datacom Product Line Management, Lumentum

• Chris joined the company in October 2015, bringing over 20 years of experience in Marketing,

Sales, and Product Line Management in the global fiber optic module and systems market. Prior

to Lumentum, Chris managed Finisar’s product management team for optical transceivers. Before

Finisar he built the transceiver business at NeoPhotonics. He was also a co-founder of Terawave,

and held marketing and product management positions at AFC and Pirelli. During his career

Chris has developed and launched several disruptive products based on innovative technologies

and turned them into successful businesses. Chris holds Ph.D. and MS. degrees in Applied

Physics from the University of Berne, in Switzerland.

Brad Booth, Principal Engineer, Microsoft

• Brad Booth is a long-time leader in Ethernet technology development and standardization,

currently heading up the 25/50G Ethernet Consortium and the Consortium for On-Board Optics

(COBO). At Microsoft, he leads the development of hyperscale interconnect strategy for

Microsoft’s cloud datacenters. He is also the founder and past Chairman of the Ethernet Alliance.

Brad was previously a Distinguished Engineer in the Office of the CTO at Dell Networking. He

has also held senior strategist and engineering positions at Applied Micro, Intel, and PMC-Sierra.

The holder of 14 patents related to networking technologies, he has received awards from the

IEEE Standards Association for work on Ethernet standards and awards for his contributions to

Gigabit Ethernet, 10 Gigabit Ethernet, Backplane Ethernet and Ethernet in the First Mile. He was

listed as one of the 50 most powerful people in networking by Network World magazine.



17


Session 2 Speakers & Panelists - II

James Regan, CEO, Effect Photonics

• James has over 30 years of experience in the photonic component business, in product

development, marketing, sales and general management in building successful

businesses within large companies (Nortel, JDSU) and start-ups (Agility

Communications).

Silvio Abrate, Head of Applied Photonics, ISMB

• Silvio Abrate is head of the Applied Photonics research group at ISMB and manager

of the PhotonLab research facility, held in cooperation with Politecnico di Torino.

Mauro Macchi, Director SP EMEAR, Cisco

• Mauro’s 20+ years career in telecom industry includes Engineering and Product

Management roles in Pirelli, Cisco and Juniper Networks. He is currently leading

EMEAR Business Overlay team for IP, Optical and Data Center technologies.


Documents

Intra Optical Data Center Interconnection Session 2 ...s3.amazonaws.com/JuJaMa.UserContent/756ec7a3-4435-4c59-861… · integrating 8 IQ modulators and the other passive Tx building