19
Robert Szczygieł IFJ PAN SPIE 2005 Radiation hardness of the mixed- mode ASIC’s dedicated for the future high energy physics experiments Introduction Radiation hardness of ABCD - the readout chip for silicon strip detectors Radiation hardness of DTMROC - the readout chip for straw tube detectors Conclusions

Introduction Radiation hardness of ABCD - the readout chip for silicon strip detectors

  • Upload
    ronli

  • View
    41

  • Download
    0

Embed Size (px)

DESCRIPTION

Radiation hardness of the mixed-mode ASIC’s dedicated for the future high energy physics experiments. Introduction Radiation hardness of ABCD - the readout chip for silicon strip detectors Radiation hardness of DTMROC - the readout chip for straw tube detectors Conclusions. Introduction. - PowerPoint PPT Presentation

Citation preview

Page 1: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

Radiation hardness of the mixed-mode ASIC’s dedicated for the future high energy physics

experiments

Introduction

Radiation hardness of ABCD - the readout chip

for silicon strip detectors

Radiation hardness of DTMROC - the readout chip

for straw tube detectors

Conclusions

Page 2: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

Introduction

High Energy Physics experiments require radiation hard mixed-mode and digital ASICs for fast detector data processing.

ATLAS detector – 150 mln sensors to be read out every 25 ns.

Page 3: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

ATLAS – one of the experiments build on LHC.

Introduction

Pixel sensors:- 140 mln

Silicon strips:- 6.4 mln

Straw sensors:- 0.37 mln

Radiation up to 134 Mrad and 2.3·1015 neq

/cm2 for 10 years of operation

Page 4: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

Introduction

Radiation effects in semiconductor devices - TID

Total irradiation dose (TID) effects – charge accumulation

in SiO2 and at the Si/SiO

2 interface, new interface states,

new recombination centers

MOS threshold voltage shift carrier mobility degradation leakage currents - device and chip level bipolar transistor ϐ degradation transistor noise increase increased parameters' spread (important in multichannel

ASIC's)

At the circuit level: analogue parameters (gain, BW, offset, etc.) are modified, reduced digital logic speed, changed power consumption.

Page 5: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

Introduction

Radiation effects in semiconductor devices - SEE

Single event effects (SEE) – charge generated by single particle

single event transients (SET) in combinational logic single event upset (SEU) in memory elements single event gate rupture (SEGR) single event burnout (SEBO)

The SEE lead to functional errors or device destruction.

Radiation effects depend on: technology type of radiation device biasing temperature

Page 6: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

Introduction

Submicron technologies.

MOS transistors' Vth

shift

negligible due to the charge removal from the gate oxide (tunneling effect).

Leakage currents in NMOS transistors still important.

Leakage currents can be eliminated by using enclosed layout transistors.

Drawbacks: increased size, limited W/L ratio

Page 7: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

Introduction

Requirements for readout ASIC's in the ATLAS

Radiation hard – should work reliably for 10 years in highly radioactive environment (10-100 times higher than for space)

Low power – cooling systems introduced in the detector volume disturb the particle traces

Minimal area – granularity of the sensors in the tracking detectors is very high

Multichannel – providing data processing for a number of sensors

Functionality – should provide data compression via trigger system (store all the data from the sensor until the validating “trigger” signal arrives)

Page 8: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

ABCD chip

ABCD – silicon strip detectors readout

Fast front-end: 20 ns peaking timeLow noise: 1500 el @ 20 pF CLClock: 40 MHzData retention: 3.2 µs

6.4 mln channels in the system.

Power: < 0.5 WArea: 51 mm2

Transistors: 250 000TID: 10 Mrad

2·1014 neq

/cm2

Page 9: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

ABCD chipABCD Radiation hardness

radiation hardened 0.8 µm BiCMOS SOI technology; ELTs not necessary, low number of SEE

programmable biasing for analogue channels and internal calibration

DACs for discriminator threshold correction in all 128 analogue channels

speed margins for digital logic (expected 100 % slow down after irradiation)

precise internal synchronization byanalogue simulations

redundant clock and data inputs

bypassing scheme

Page 10: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

ABCD chip

Bypassing scheme

Any damaged chip in the module can be bypassed.

Page 11: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

ABCD chip

Two different types of memories used (result of power/area optimization)-> impossible to balance the clock tree on the chip level-> analogue simulations for all the corners (10 sets of irradiation

models)

ABCD internal synchronization

Page 12: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

ABCD chip

ABCD irradiation tests

24 GeV proton beam, CERN PS 200 MeV pions, PSI Villingen neutrons, nuclear reactor at Ljubljana 10 keV X-rays, CERN

Test results

no catastrophic failures analogue channels biased properly increased noise in the analogue channels increased channel threshold spread, corrected with DACs digital logic working at speed > 40 MHz logic speed down by a factor of ~2 SEU rate negligible comparing to noise

ABCD fulfills the ATLAS Semiconductor Tracker specification.

Page 13: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

DTMROC chip

DTMROC – straw tube detectors readout

Clock: 40 MHzTID: 7 Mrad

3.5·1014 neq

/cm2

370 000 channels in the system.

Area: 26 mm2

Data retention: 6.4 µsTransistors: 500 000

Page 14: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

DTMROC chipDTMROC Radiation hardness

submicron 0.25 µm CMOS technology; negligible MOS Vth

shift (15 mV NMOS, -30 mV PMOS @ 10 Mrad)

enclosed layout transistors (ELT) in analogue and digital part (dedicated standard cell library)

triplicated control logic and registers with SEU counter

parity checking for all the registers

watchdog circuits

DLL monitoring

command decoder designed to accept any input data; it rejects any invalid input data and recovers after predefined time to minimize the probability of loosing the synchronization with the rest of the system

Page 15: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

DTMROC chip

SEU protection areas in DTMROC

Only the parts of the logic necessary for keeping the data processing efficiency within the experiment specification are protected.

Page 16: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

DTMROC chip

Triplicated 1-bit register with self-recovery and SEU output

V. Ryjov

Page 17: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

ABCD chip

DTMROC irradiation tests

1.33 MeV gamma (Co-60), Saclay 24 GeV protons, CERN PS neutrons, reactor in Ljubljana 60 keV X-ray, CERN

Test results

10 % DAC range increased, no linearity degradation no speed degradation power consumption not modified SEU in critical parts eliminated by redundancy SEU crossection in the registers 0.8-1.2·1014 cm2

DTMROC fulfills the ATLAS Transition Radiation Tracker specification.

Page 18: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

Conclusions

Conclusions

1. ASIC's dedicated to the readout of the tracking detectors in future HEP experiments have to be characterized by low power, fast data processing and very high radiation hardness.

2. The radiation hardness of the ASIC's is achieved by using the radhard or submicron technology and dedicated design elements.

3. Radhard design has been demonstrated on the examples of two chips, ABCD and DTMROC.

4. Both ASIC's fulfill the specifications. They have been produced, and are being installed in the ATLAS experiment.

Page 19: Introduction Radiation hardness of  ABCD - the readout chip  for silicon strip detectors

Robert Szczygieł IFJ PANSPIE 2005

Conclusions

Francis AnghinolfiGerit MeddelerDaniel LamarraWładysław DąbrowskiJan KapłonVladimir RyjovMitch NewcomerNandor DressnandtRick Van BergPaul KeenerHenry WilliamsTor Ekenberg

Thanks to ABCD and DTMROC design teams: