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Investigation of fluence–dependent lifetime variations in proton and neutron highly irradiated Si. E.Gaubas, A.Kadys, A.Uleckas, and J.Vaitkus. Vilnius university, Institute of Materials Science and Applied Research, Sauletekio av. 10, LT-10223, Vilnius, Lithuania. Outline Motivation - PowerPoint PPT Presentation
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Investigation of fluence–dependent lifetime variations in proton and neutron highly irradiated Si
E.Gaubas, A.Kadys, A.Uleckas, and J.Vaitkus
Vilnius university, Institute of Materials Science and Applied Research, Sauletekio av. 10, LT-10223, Vilnius, Lithuania
Outline
Motivation
Fluence and heat-treatment dependent lifetime variations
Characteristics of lifetime cross-sectional profiles
Summary
Motivation of investigation
- Direct measurements of recombination lifetime:
MWR transients,
combined investigations of MWR and DG,
comparison between neutron and proton irradiated materials
- Control of possible anneal of defects and of behavior of the capture centers
- Cross-sectional scans within wafer depth
Measurement techniques and instruments
Microwave probed photoconductivity (MW-PCD)
in MW reflection mode (MWR) Dynamic gratings (DG)
Diffraction efficiency (=I-1/I0) on light induced dynamic grating is a measure (N)2 of excess carrier density, while its variations in time (t) exp(-2t/G) by changing a grating spacing () enable one to evaluate directly the parameters of grating erase 1/G = 1/R + 1/D through carrier recombination (R) and diffusion D = 2/(42D) with D as a carrier diffusion coefficient.
K.Jarasiunas, J.Vaitkus, E.Gaubas, et al. IEEE Journ. QE, QE-22, (1986) 1298.
k
E
cw MW probe
laser lightpulsed excitation R
kk
E
cw MW probe
laser lightpulsed excitation R
(t)
MWR >100m 0 =(4/c )dc, transient:(t) (t) FC nexFC (t)
E.Gaubas. Lith. J. Phys., 43 (2003) 145.
Rload
MB tiltas
MW oscillatorwith adjustable power
and frequency
MB cirkulatorius
MB tiltas
MW circulator
f0.5 GHz,U1 mV/pdf0.5 GHz,U1 mV/pd
TDS-5104
Microchip laser STA-01
exc ~700 ps, Eexc 10 J
MW slitantenna
sample
MW bridge
Attenuatorof light density Sliding short
Sliding short
Sliding short
Amplifier (>50)
MW detector
Rload
MB tiltas
MW oscillatorwith adjustable power
and frequency
MB cirkulatorius
MB tiltas
MW circulator
f0.5 GHz,U1 mV/pdf0.5 GHz,U1 mV/pd
TDS-5104
Microchip laser STA-01
exc ~700 ps, Eexc 10 J
MW slitantenna
sample
MW bridge
Attenuatorof light density Sliding short
Sliding short
Sliding short
Amplifier (>50)
MW detector
MB tiltasMB tiltas
MW oscillatorwith adjustable power
and frequency
MW oscillatorwith adjustable power
and frequency
MB cirkulatorius
MB tiltas
MW circulator
f0.5 GHz,U1 mV/pdf0.5 GHz,U1 mV/pd
TDS-5104
Microchip laser STA-01
exc ~700 ps, Eexc 10 J
Microchip laser STA-01
exc ~700 ps, Eexc 10 J
MW slitantenna
sample
MW bridge
Attenuatorof light density Sliding short
Sliding short
Sliding short
Amplifier (>50)
MW detectorThe microwave probed photoconductivity (MW-PCD) technique is based on the direct measurements of the carrier decay transients by employing MW absorption by excess free carriers. Carriers are photoexcited by 1062 nm light generated by pulsed (700 ps) laser and probed by 22 GHz cw microwave probe.
1012 1013 1014 1015 101610-4
10-3
10-2
10-1
100
101
=1
Okmetic MCZ<100> 1kOhm·cm 300 m non-processed CISSamples 8556- 14 1 - 63 passivated wafers
- directly measured values &extracted from the decrease of amplitude UMWR
wafers 54-60 measured by DG
R
-1 (
ns-1)
Fluence (n/cm2)
Direct measurements of recombination lifetime by MWR
0 5 10 150
5
10
15
20
- H1-1012 n/cm2
-H61
- H2-1013 n/cm2
- H62
- H3-1014 n/cm2
- H63
- H4-3·1014
n/cm2
- H64
- H53-1015
n/cm2
- H54
- H55-3·1015
n/cm2
- H56
- H57-1016
n/cm2
- H58
- H59-3·1016
n/cm2
- H60
UM
WR (
a.u
.)
t (s)
R t|U ~ exp(-1)
R gexcRs/gexcRL (UMWRs<2 ns /UMWRL>5 ns)
1012 1013 1014 1015 1016
10-1
100
101
102
103
104
Laser pulse limit
Electr. circuitry limit
Okmetic MCZ<100> 1kOhm·cm 300 m non-processed CISSamples 8556- 14 1 - 63
- directly measured values - extracted from the decrease of amplitude U
MWR
Eff
ect
ive
life
time
(n
s)Neutron fluence (cm
-2)
Direct measurements of recombination lifetime by DG
0 200 400 600 800
10-3
10-2
10-1
100
Diff
ract
ion
effic
ienc
y (a
. u.)
Delay (ps)
I0=0.4 mJ/cm
2,
G=(2658) ps
I0=0.8 mJ/cm
2,
G=(2404) ps
I0=1.6 mJ/cm
2
G=(2042) ps
MCZ wafer 60=13 m
31016 n/cm2
D (cm2/s) R (ps)
15.40.4 2203
Recombination lifetime in wafer and diode samples of various technologyirradiated by neutrons and protons
1012 1013 1014 1015 1016
10-4
10-3
10-2
10-1
100
101
Neutron irradiated material MCZ, CIS 8556- 14 wafers 1 - 63 passivated MCZ, CIS 8556- 14 wafers measured by DG technique MCZ, CIS 8556-01 diodes neutron irradiated
Proton irradiated material sFZ Si diode long storage at RT DOFZ Si diode long storage at RT MCZ wafer long storage at RT
1/ R
(n
s-1)
Fluence (n/cm2)
100 150 200 250 300 350 400
10-1
100
101
102
recombination
trapping
0.24±0.02 eV 0.66±0.1eV
MCZ n-Si
10 MeV protons 1013
cm-2
10 MeV protons 5x1012
cm-2
50 MeV protons 9x1012
cm-2
(
s)
T (K)
Temperature variations of recombination and trapping lifetime in MCZ Siirradiated by protons
Lifetime under heat treatments at 80C for 5 min, 30 min and 24 h
1012
1013
1014
1015
1016
10-4
10-3
10-2
10-1
100
101
Okmetic MCZ<100> 1kcm as-irradiated
Heat treated at Tann= 800 C
for tanneal = 5 min 30 min 24 h
Rec
ombi
natio
n lif
etim
e (
s)
Neutron fluence (n/cm2)
Lifetime variation with neutron irradiation fluence in MCZ Si wafers for the as-received and heat treated material
Cross-sectional scans within wafer depth
fiber
MW coaxial needle-tipantenna
sample
0 100 200 30010
0
101
102
103
MCZ 1 k·cm, d= 300 m neutron fluence
1012
cm-2
3·1014
cm-2
1015
cm-2
3·1015
cm-2
MWR amplitude R(n
s),
MW
R a
mpl
itude
(a.
u.)
Z (m)
SUMMARY
Lifetime decreases nearly linearily from few s to about of 200 ps with enhancement of neutron irradiation fluence ranging from 1012 to 31016 n/cm2, as measured directly by exploiting microwave probed photoconductivity transients and verified by dynamic grating technique.
Lifetime values are nearly the same for wafer and diode samples in neutron irradiated material for as received samples.
Values o f recombination lifetime are close for neutron and proton irradiated samples for materials of various technology
Behavior of dominant capture centers varies with temperature
Small increase of lifetime values under annealing can be implied in neutron irradiated material
Lifetime values are nearly invariable within wafer thickness, as determined from the lifetime cross-sectional scans within wafer depth.
Thank You for attention !