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Ion Scattering Techniques for Material AnalysisMaterial Physics IF1602, Autumn 2010
Anders Hallén
Outline
1. History
2. Energetic ion interaction with matter
3. Equipment
4. Other ion scattering techniques
5. Basic RBS theory
6. RBS on-line demonstration using Uppsala tandem accelerator and internet
Brief History
”It was quite the most incredible event that ever happened to me in my life.It was as incredible as if you fired a 15 inch shell at a piece of tissue paper and it came back and hit you.”Ernest Rutherford, 1911
Detector
Ernest Rutherford 1871-1937Nobel Prize in Chemistry 1908
Au foil
Scintillatorscreen
RadioactiveSource (alpha
particles)
Student
Θ
Atom Models Electron(negativecharge)
Thomsons plum pudding model of the atom
Positive distributed charge and mass
Rutherfords experiment led to Bohr’s model
Positive localized charge and mass (nucleus)
Electrons with quantized energies
Stopping ofHe in silicon
0.001
0.01
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000 104
Energy (keV)
Nuclear stopping
Electronic stopping
0.001
0.01
0.1
1
10
100
1000 1500 2000 2500 3000 3500 4000 4500 5000
Energy (keV)
Nuclear stopping
Electronic stopping
RBSregion
•Secondary ion mass spectrometry (SIMS)Primary ion energy: 5 < E < 20 keV
•Rutherford backscattering spectrometry(RBS)Primary ion energy: 1 < E < 5 MeV
•Medium energy ion scattering (MEIS) Primary ion energy: 50 < E < 500 keV
Typical energy ranges for IBA
Electronic stoppingEnergy given up to the lattice electronic system. No permanent damage (in conducting matter).
Nuclear stoppingElastic collisions between incoming ion and screened lattice nuclei. Occurs predominantly towards the end of the ion track, where the material will be permanently damaged.
Rutherford scattering
Kinematics
E0, M1
Before After
M2
E1, M1
E2, M2
Θ
Conservation of E and p
E1 = k E0
Kinematic factor k = k(M1, M2, Θ)
Energy lossElectronic stopping is known and roughly constant for small depths
The yield of backscattered particles can be estimated
Rutherford calculated the probability for scattering σ = σ(Θ, Z1, Z2, E0)
Depth of the collision can be estimated
Typical scattering chamber
Accelerated ions, E0, M1
MCA Solid statedetector
Target
Θ
Backscattering geometry
Uppsala 5 MV Pelletron tandem
6 beamlines of which 5 are used for analysis
Scattering chamber used for RBS and ERDA
0
5 x 103
1 x 104
1.5 x 104
0 5x101 1x102 2x102 2x102 3x102 3x102 4x102 4x102
Channel no.(prop. to energy of backscatterd ion)
Si
C
2.0 MeV He on SiCRandom
28Si 12C
RBS example: 2.0 MeV He on SiC
Si at surface:highest energy
Si in bulk:lower energy due to
electronic energy loss
Si depth
C at surface:lower energy due to
kinematic factor
Resulting spectrum
Data analysis by simulation of spectrahttp://www.rzg.mpg.de/~mam/
• MeV random RBS (RBS-r) for thin film analysis– Surface composition– Trace impurity concentration – Element identification (heavy element in light matrix)– Depth profile within ~ μm of target surface
• Probing depth: ~ a few μm• Detection sensitivity: more sensitive to the heavy element due to larger
differential recoil cross section, – ~10-4 monolayers for 207Pb on 12C, ~2×10-2 monolayers for 75As on
65Zn, • Depth resolution: ⁄ ~ 30 nm• Mass resolution: ~3% at M2=100
RBS (random) applications and limitations
Incoming (focused) beamMeV-ions
Sample(thin or thick)
Backscattered ionsRBS
Recoiled (target) ionsERDA
X-raysPIXE
Nuclear reaction productsγ-rays, neutrons, protons ...
NRA
Forward scattered ionsPESA
ElectronsLight
IBAIon Beam Analysis
A Hallén02-03-2006
•Rutherford backscatteringspectrometry (RBS)
•Secondary ion mass spectrometry (SIMS)
•Elastic recoil detection analysis(ERDA)
•Channeling RBS (RBS-C)
•Nuclear reaction analysis (NRA)
•Medium energy ion scattering (MEIS)
Other IBA varieties
Typical scattering chamber
Accelerated ions, E0, M1
MCA
Time-of-flightdetector
Target
Θ
Recoil detection geometry
Recoils
Stop
Start
E detector
Typical ERDA spectrumProbing beam: 127ITarget: Cu sample
0
0.2
0.4
0.6
0.8
1
0E+00 2E+18 4E+18
Depth /(at. cm-2)A
tom
ic fr
actio
n
CP+AlCrNiCo
Yield
C OAl Cu
I
ToF /[ch.]Energy /[ch.]
Energy Channel
Mas
s Cha
nnel Ni
Cr
Co
P
CAl
C/Co/Cr/Ni-P/Al multilayer structurefrom a standard hard disc
Data analysiswith
CONTES
• Signals from elements with overlapping energy distributions can be resolved (e.g., Si in AlxGa1-xAs).
• Depth profiles of heavy and light elements can be measured simultaneously (e.g., the Pd/InP system).
• Probing depth: ~ a few μm• Detection sensitivity: almost constant. When M1>M2, the cross
section is almost independent of recoil• Element sensitivity: ⁄0.1%• Depth resolution: ⁄ 20 nm• Elemental separation power: ΔM/M ⁄5% at medium mass elements
ERDA applications and limitations
28Si 12C
RBS Channeling mode
Probe beam aligned with a crystal axis
The backscatter yield drops to less than 5% compared to random incidence.
0.0
5.0 102
1.0 103
1.5 103
2.0 103
2.5 103
3.0 103
0.0 50 1.0 102 1.5 102 2.0 102 2.5 102 3.0 102
Channel number
Random
Aligned
C-edge
Si-edge
?
Beam aligned with SiC (0001) direction
Channeling RBS
Channeling RBS
Scan: ±3.8° in 0.1° interval by 2.4 MeV 4He+
Mapping of Si(100) surface
Channeling RBS Implantation damage in ZnO
0
500
1000
1500
2000
100 150 200 250 300 350 400
Channel no
Random
3E16 As-impl and annealed
5E15 As-impl and annealed
Virgin
0
200
400
600
800
1000
0 50 100 150 200 250 300 350 400
3.70 MeV He3.80 MeV He
Channel no.
N
Ti
Si
4HeTiN
Si
Nuclear Reaction Analysis NRA
14N (α,α) 14NExample of non-Rutherford cross sectionsResonance (enhanced cross section) at 3.70 MeV
Conclusions♦ Ever since Rutherford discovery, energetic ions
beams have been used to probe matter.
♦ Standard RBS makes it possible to investigate elementalcontent, composition and element depth profiles of thinfilms.
♦ The technique is quantitative since the following are wellknown:
KinematicsEnergy lossRutherford cross section (probability for scattering)
♦ Many varieties of IBA exists.