ITRS Summer Conference 2011 San Francisco, CA Work in Progress: Not for Distribution 2010 ITRS Emerging Research Materials [ERM] July 13, 2011 C. Michael

ITRS Summer Conference 2011 San Francisco, CA

Work in Progress: Not for Distribution

2010 ITRS

Emerging Research Materials

[ERM]

July 13, 2011

C. Michael GarnerDaniel Herr – SRC



2010 & 2011 ERM ParticipantsHiro Akinaga AISTJesus de Alamo MITTsuneya Ando Tokyo Inst. Tech Dimitri Antoniadis MITNobuo Aoi PanasonicKoyu Asai RenesasAsen Asenov U. of GlasgowYuji Awano Keio UnivDavid AwschalomUCSB.Kaustav Banerjee UCSBDaniel-Camille Bensahel ST MicroStacey Bent Stanford U.Kris Bertness NISTBill Bottoms NanonexusGeorge Bourianoff IntelRod Bowman SeagateAlex Bratkovski HPRobert Bristol IntelBernard Capraro IntelJohn Carruthers Port. State Univ.

An Chen Global Foundry

Eugene Chen Grandis

Zhihong Chen IBM

Joy Cheng IBM

Toyohiro Chikyo NIMS

Byung Jin Cho KAIST

U-In Chung Samsung

Luigi Colombo TI

Hongjie Dai Stanford U.

Thibaut Devolder Univ. Paris Sud

Athanasios Dimoulas IMS GreeceCatherine Dubourdieu L. Mat. Genie Phys. & IBMJohn Ekerdt U. of TexasTetsuo Endoh Tohoku Univ.James Engstrom Cornell U.

Satoshi Fujimura TOKMichael Garner GNS Niti Goel IntelMichael GoldsteinIntelSuresh Golwalkar IntelWilfried Haensch IBMDan Herr SRCHiro Hibino NTT

Bill Hinsberg IBM

Judy Hoyt MIT

Jim Hutchby SRC

Ajey Jacob Intel

David Jamieson U. Melbourne

Ali Javey U.C. BerkeleyJames Jewett IntelBerry Jonker NRLXavier Joyeux IntelTed Kamins Stanford U.Zia Karim AIXTRON AG Takashi Kariya IbidenMasashi Kawaski Tohoku U.Leo Kenny IntelPhilip Kim Columbia U.Sean King IntelAtsuhiro Kinoshita ToshibaMichael Kozicki ASUMark Kryder CMUYi-Sha Ku ITRIHiroshi Kumigashira U. TokyoY.J. Lee Nat. Nano Lab TWLiew Yun Fook A-StarWei-Chung Lo ITRILouis Lome IDA Cons.Gerry Lucovsky NCSUMark Lundstrom Purdue U.Yale Ma SeagateBlanka Magyari-Kope Stanford U.Allan MacDonald Univ. of Texas

Prashant Majhi IntelWitek Maszara Global FoundryFrancois Martin LETIFumihiro Matsukura Tohoku U.Nobuyuki Matsuzawa SonyJennifer Mckenna IntelClaudia Mewes U. AlabamaYoshiyuki Miyamoto NECAndrea Morello UNSWBoris Naydenov U. StuttgartPaul Nealey U. Wisc.Kwok Ng SRCFumiyuki Nihey NECYoshio Nishi Stanford U.Dmitri Nikonov IntelYaw Obeng NISTChris Ober Cornell UnivKatsumi Ohmori. TOKYoshichika Otani Riken Inst.Jeff Peterson IntelAlexei Preobrajenski Lund Univ.Victor Pushparaj AMATGanapati Ramanath RPI Ramamoorthy Ramesh U.C. BerkeleyNachiket Raravikar IntelHeike Riel IBMDave Roberts NanteroMark Rodwell UCSBSven Rogge Delft U.Jae Sung Roh HynixTadashi Sakai ToshibaGurtej Sandhu MicronKrishna Saraswat Stanford U.Hideyki Sasaki Toshiba NanoanalysisShintaro Sato AISTAkihito Sawa AISTBarry Schechtman INSECThomas Schenkel LBNLSadasivan Shankar Intel

Mizuki Sekiya AISTMatt Shaw IntelTakahiro Shinada Waseda Univ.Michelle Simmons UNSWKaushal Singh AMATJon Slaughter EverspinBruce Smith RITTsung-Tsan Su ITRIMaki Suemitsu Tohoku U.Naoyuki Sugiyama TorayC-Y Sung IBMRaja Swaminathan IntelMichiharu Tabe Shizuoka U.Hidenori Takagi U. of TokyoShin-ichi Takagi U. of TokyoKoki Tamura TOK AmericaIan Thayne U. of GlasgowYoshihiro Todokoro NAISTYasuhide Tomioka AISTMark Tuominen U. MassPeter Trefonas DowMing-Jinn Tsai ITRIWilman Tsai Intel Ken Uchida Tokyo TechYasuo Wada Toyo UVijay Wakharkar IntelKang Wang UCLARainer Waser Aacken Univ.Jeff Welser IBM/NRIC.P. Wong GA Tech. Univ.H.S. Philip Wong Stanford U.Dirk Wouters IMECWen-Li Wu NISTHiroshi Yamaguchi NTTToru Yamaguchi NTTChin-Tien Yang ITRIHiroaki Yoda ToshibaJiro Yugami RenasasSC Zhang Stanford U.Yuegang Zhang LBNLVictor Zhirnov SRCPaul Zimmerman Intel



2011 Key Messages

• Preparation for 2011 ERM Chapter– Updating Material Progress– Identifying Critical Material Challenges– Critical Assessments of Select ERM– Identified New ITWG Requirements for ERM – Transitioning Mature Materials to ITWGs– Workshops

• Memory Materials Workshop: Completed• Directed Self Assembly Litho Applications: Completed• Deterministic Doping: Completed

• e-Workshops: Completed



Memory Materials

• Ferroelectric Memory• Nanoelectromechanical (NEMM)• Redox RAM• Mott Memory• Macromolecular • Molecular



Memory Materials Workshop

Redox RAM: How can we experimentally verify that the Redox RAM operating mechanism?

MTJ: What materials or interface research should be performed to enable reduction of write energy by 10X?

Even with the combination of MgO-CoFeB (normally in-plane), interface control enables Perpendicular MTJ.



Extending CMOS Logic Alternate Channel Materials

Alternate Channel Materials

-n-Ge & p-III-V

-Nanowires

-Graphene

-Carbon Nanotubes

III-V Heterostructures(L. Samuelson, Lund Univ.)

A. Geim, Manchester U.

Assess

Materials Performance

Gate materials

Contacts

Interfaces

MOS

-Identify Novel Metrology & Modeling Needs

D. Zhou, USC



Beyond CMOS LogicMaterials & Interfaces

Assess• Ferromagnetic Materials, Dilute Magnetic Semiconductors• Complex Metal Oxides• Strongly Correlated Electron State Materials (FE, FM, FE & FM)• Molecules• Interfaces

Spin StateFerroelectric

Polarization

Negative Capacitance FET•Individual or Collective

Charge Based States Other Than Charge Only



Lithography

Novel Molecules

for Double Exposure

Evolutionary Resist Design

-Positive Resist

New Applications of Old Resist

Non-Chem Amp (193nm)

Negative Resist (EUV)

Directed Self Assembly (DSA)

Intermediate State

Tethered Anthracene

Bristol, Intel

DSA

•Assemble smaller features in higher density

•Defect density reduced <25cm-2

•Critical Assessment underway

Ruiz, et. al. Science 2008



Front End Processing

Ho, Javey, Nature Materials 2008

Monolayer Doping

•DSA Produces Order•Implant Delivers Dopants

Massive Parallel Dopant Control

Deterministic Doping Progress

Bosworth,

Ober, ACS NANO 2008

Patterning & doping

via DSA

)

50nm

n-MOS p-MOS

X

Y

Z

Inoue, Ultramicroscopy 2009

3D atom probe

Roy, AsenovScience 2005

3D simulation

Metrology and Modeling Progress

• Identified potential high volume mfg. techniques• Expected to be Multigate compatible • Potential for low temperature and damage process



Interconnect Materials

Via

Wire

Via

Wire

Interconnects

- Carbon Nanotubes

-Graphene

Ultra-thin Barrier Layers

•Transition Ru Barriers to Interconnect TWG

•Novel sub 5nm materials

•Self Assembled Monolayers (SAM)Ultra low κ ILD

Novel Interconnects & Vias

Native Interconnect

MIRAI-Selete / TOSHIBA, APEX 3 (2010) 055002

Fujitsu Lab / CREST, APEX 3 (2010)



3D Interconnects

• Chip Attach Materials With Thermal Hierarchy– Electrical Interconnects– Nanosolders– Polymers

• Stress and Thermal Management Materials• Self Aligning Material Technologies

– Beyond surface tension…



Assembly & Package

• 1D Interconnects – Nanosolder, CNT & NW

• Polymers with Mechanical, Electrical & Thermal Properties

• Polymers With Zero Moisture Absorption• Ion Free or Immune Mold Compound• Management of III-V & Ge Device Stress



Hexagon of Assembly Material Requirements

• Highly coupled Material Properties• Apply novel materials to achieve optimal performance

CTE

ModulusFracture

Toughness

Functional

Properties

Moisture

ResistanceAdhesion

Examples

Thermal Interface Mat.

Mold Compound

Underfill

Adhesives

Epoxy

CTE depends on volume fraction



ESH Challenges• Materials needed to overcome significant

technical challenges– Low energy processes and new materials for low

energy integrated circuits– Few materials can meet requirements– Some materials have known hazards or

uncharacterized ESH properties– Stimulate ESH research in uncharacterized materials– Good risk management methods for materials ESH

in Research, Development & Manufacturing – Lifecycle Assessment & Management – Efficient use of materials



Summary

Updating Materials ProgressHighlighting Critical ChallengesIdentified New ITWG Requirements for ERM Transitioning Mature Materials to ITWGsCritical Assessments of Select ERM



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Documents

ITRS Summer Conference 2011 San Francisco, CA Work in Progress: Not for Distribution 2010 ITRS Emerging Research Materials [ERM] July 13, 2011 C. Michael