Embed Size (px)
DESCRIPTION
Overview on New Technologies in Silicon Detectors 20th International Workshop on Vertex Detectors June 20 th Rust, Austria. Iván Vila Álvarez Instituto de Física de Cantabria (CSIC-UC ). Scope and Caveat. - PowerPoint PPT Presentation
Citation preview
Overview on New Technologies in Silicon Detectors20th International Workshop on Vertex DetectorsJune 20th Rust, Austria
Iván Vila Álvarez
Instituto de Física de Cantabria (CSIC-UC)
Scope and Caveat— Focus on technologies proposed for the new generation
of HEP pixel/tracker systems.— Too broad topic for a comprehensive & detailed report.— Even current hot topics, like SiPM, outside the talk’s
scope.— Detailed reports on dedicated talks (see agenda):
sensors material and technologies, FEE-sensor interconnection, low mass supports, cooling, monitoring, local triggering, fast r/o links, industrialization, etc.
— Thank you to the too long list of people from which I grab all the nice pictures and plots.
2I.Vila, [email protected] - VERTEX2011, RUST
June 20th
Outline— R&D Targets and trends.— New (evolved) sensor concepts: monolithic, semi-
monolithic , hybrid and approaches.— New hybridization: SoI & 3D-IC— Module and detector system engineering.
_ Power distribution systems._ Ultra light mechanics_ Structual & environmental monitoring.
— Summary
I.Vila, [email protected] - VERTEX2011, RUST June 20th 3
The colliding Future ?— Bunch of projected EPP experiments driven the
mainstream R&D lines.
4I.Vila, [email protected] - VERTEX2011, RUST
June 20th
HL-LHC
— Low mass, high precision vs. Rad. Resistance High granularity…. not quite app. beyond TRK/VTX.
STAR
R&D Trends
Sensor Technologies
Radiation
Resistance
Vertical
Electrode
s (3D)
N-in-p
New materials: MCz, Diamond, GaAs
.
High Resolutio
n/ low mass
DEPFET
CMOS
Smalll
pitch,
thinned
Hybrids
FPCCD,
CID
Sensor/ROC
integration
Hybrid
Single
stack
(flip-chip)
SOI
Multiple stacks
(3D-IC
interconnections)
Monolithic
CMOS
Module Engineering
ULTRALIGHT
MECHANICS
Self-supportin
g sensors
(DEPFET)
New materials (PLUME, SiC)
COOLING
CO2
AIR BLOWING
POWERING
SERIAL
DC-DC EMI
MONITORING
FOS- SENSORS
DATA LINK
TRANSCIVER
TRANSMISION LINE
5I.Vila, [email protected] - VERTEX2011, RUST
June 20th
Back to the future: Evolved hybrids— During LHC’s LS1 shutdown a forth
extra layer to be installed (IBL) (R ~ 33mm)
— Ionizing dose > 250 MRads— NIEL dose: 5x1015 neqv cm-2
— Two (Three) competing hybrid technologies
6I.Vila, [email protected] - VERTEX2011, RUST
June 20th
CiS CNMFBK
3D IBL Qualification Devices (FE-I4)
• Sensor produced at CNM• UBM and flip-chip at IZM
(Germany)• Mounted in Bonn and Genova
7I.Vila, [email protected] - VERTEX2011, RUST
June 20th
5 x 1015 nequiv cm-2
20 V 120 V
3D IBL Qualification Devices (FE-I4)— Good threshold and noise uniformity and CCE— Irradiated 3D-FE-I4 devices currently at SPS
test beam.
8I.Vila, [email protected] - VERTEX2011, RUST
June 20th
9I.Vila, [email protected] - VERTEX2011, RUST June 20th
3D sensors for LHCb’s VELO upgrade
— Other advantages: faster, reduced charge sharing to neighboring pixels, slim active edges.
— Drawbacks: inefficient volume due to column electrodes, much complex processing.
— 3D bump bonded to Medipix2 and TimePix ROC.
Single pixel efficiency120 GeV pions normal incidence 2011 JINST 6 P05002
3D sensors vs. Planar
Single pixel scan with microfocus (~5um) monocromatic X ray source.
10I.Vila, [email protected] - VERTEX2011, RUST
June 20th
ratio of multiple hits/ single hit distribution in the single pixel area.
3D
PLANAR
Semi-monolithic sensors: DEPFET— Implanted transistor on a fully depleted bulk.— Integration of the first amplification stage.— Selected solution for Belle II vertex & proposal for
ILD vertex.
11I.Vila, [email protected] - VERTEX2011, RUST
June 20th
Semi-monolithic sensors: DEPFET— Fully depleted sensitive volume (large signals)
_ r/o cap. independent of sensor thickness (reduce noise)— Internal amplification
_ charge-to-current conversion_ Large signal, even for thin devices._ Further signal amp. and processing outside the active
area (no need for bump bonded atop electronics).— Charge collection in "off" state.
_ r/o on demand (potentially low power device)_ only few rows active low power consumption_ Frame based pixel matrix R/O, rolling shutter mode
12I.Vila, [email protected] - VERTEX2011, RUST
June 20th
Monolithic pixels: MAPS for STAR— Fully based on industrial CMOS technology— On each pixel a CMOS low noise amplifier.— n-well/p-epi diode incomplete depletion— Charge collection by diffusion (small signal)— Thinning (50um) standard procedure.
15I.Vila, [email protected] - VERTEX2011, RUST
June 20th
MAPS: Tackling two main limitations
— CMOS industry provides a highly resistive epitaxial layer Increase depletion deep better SNR and radiation resistivity.
— MIMOSA 26 (EUDET’s telescope)
16I.Vila, [email protected] - VERTEX2011, RUST
June 20th
MAPS future trends.
— MAPS pixels in Standard CMOS HV technology
17I.Vila, [email protected] - VERTEX2011, RUST
June 20th
Monolithic “hybrid” sensors: SOI
— Full CMOS circuitry connected to a highly resistive and fully depleted substrate through silicon vias.
— CMOS device layer and high resistive substrate isolated by a buried oxide layer (BOX)
18I.Vila, [email protected] - VERTEX2011, RUST
June 20th
MONOLITHIC HYBRID DEVICES: 3D-IC— Ingredients: Thin dyes (TIERS) + high density
interconnects + vias.
19I.Vila, [email protected] - VERTEX2011, RUST
June 20th
Ziptronix
Typically 2 mm – 30 mm pitch0.5 mm potential
height
diameter
Height/diameter ~ 10:1
No pixelated 2D sensors: microstrips with resistive electrodes
— Charge division used in wire chambers to determine the coordinate along the sensing wire.
— Same concept with conventional microstrips with slightly resistive electrodes
— Better than 30um in long. coocrdinate
tt
t1t2
V
Particle
P4
S1
S2
Ampl1 Ampl2
20
2D strip sensors: radiactive source & 120 SPS Test beam.
21
WRAPPING UP— More optimized (thinned, low mass reduced power
consumption) hybrid pixel still rule the hadronic realm.
— New generation of precision experiments will use the next sensor technologies: CMOS; DEPFET
— In medium/ large time scale, SOI and ·3D-IC may become a mainstream industry technology (impact on HEP?)
— Apologies, many technologies –in some cases perfectly suited for dedicate experiment- left aside: Diamond, FPCCD, CiD, …
22I.Vila, [email protected] - VERTEX2011, RUST
June 20th
SYSTEM-WISE R&D:POWERING
— Motivations: _ LHC detectors upgrade: more granularity more power
BUT same cables for power distribution and space constrains.
_ e+e- experiments (ILC, SKEK): ultralight vtx/trackers can not afford bulky cooling systems pulsed powering
_ Two strategies: serial powering vs. local DC-DC converters.
_ many issues to be addressed
23I.Vila, [email protected] - VERTEX2011, RUST
June 20th
LOW MASS MECHANICS: self-supporting sensors
24I.Vila, [email protected] - VERTEX2011, RUST
June 20th
Mechanics: new materials— PLUME Collaboration: SiC Foam
25I.Vila, [email protected] - VERTEX2011, RUST
June 20th
Fiber Optical Sensors for Structural &Environmental Monitoring
26I.Vila, [email protected] - VERTEX2011, RUST
June 20th
Fiber Optical Sensors for Structural &Environmental Monitoring
27I.Vila, [email protected] - VERTEX2011, RUST
June 20th
— Application case: relative position monitoring of PXD and SVD Belle-II pixel sub-systems.
— Extremely radiation rad technologyFluence 3x1015 pcm-2
Ion. dose 15 MGy !! zero degradation
Irradiation
SUMMARY and…
— Semiconductor based detectors are becoming more and more ubiquitous approaching the all-silicon detector concept.
— Some of the here presented battle fronts aim to still extend their reach further.
— The high precision and radiation resistance frontiers are approaching each other. Do hybrid and monolithic sensors converge on SOI or 3D-IC devices ?
28I.Vila, [email protected] - VERTEX2011, RUST
June 20th
… a final remark
29I.Vila, [email protected] - VERTEX2011, RUST
June 20th
1. I. Thou shalt minimize the cost2. II. Thou shalt stick to the budget limits.
3.THANK YOU !
![SiD LoI preparation workshop, SLAC 3th March 2009 Spanish Network LoI contribution Iv á n Vila Á lvarez Instituto de F í sica de Cantabria [CSIC-UC]](https://img.pdfslide.net/doc/110x75/56649f095503460f94c1df7a/sid-loi-preparation-workshop-slac-3th-march-2009-spanish-network-loi-contribution.jpg)
