Joachim Roth, ITPA Shanghai, Jan.06

J. Roth1

With the help of and discussions with

K. Schmid1, M. Mayer1, A. Kirschner2, A. Kukushkin2

1 Max-Planck-Institut für Plasmaphysik, EURATOM Association, Garching, Germany2 Institut für Plasmaphysik, FZ Juelich, EURATOM Association, Jülich, Germany

3ITER Joint Central Team, Garching Joint Worksite, Garching, Germany

Outline: Implantation into CFC, W and Be materials

Present knowledge about co-deposition

Total inventories dependent on fluence and time Relevance for ITER

D/T retention in W, Be and C

Joachim Roth, ITPA Shanghai, Jan.06

Carbon fibre composites

Joachim Roth, ITPA Shanghai, Jan.06

CFC-material irradiated with 200 eV D ions exposed to 100 eV D plasma

0 2 4 6 8 10 12 1410-3

10-2

10-1

100

101

0.0 0.2 0.4 0.6 0.8 1.010-1

100

101

= 1.0x2021 D/m2

= 1.0x2022 D/m2

= 1.5x2023 D/m2

= 5.0x2024 D/m2

200 eV D ions CFC-NB31T

irr = 323 K

IPP, Garching

D c

once

ntra

tion

[at.

%]

Depth [m]

b)

a)

Depth [m]

D c

once

ntra

tion

[at.

%]

0 2 4 6 8 10 12 1410-3

10-2

10-1

100

101

0.0 0.2 0.4 0.6 0.8 1.010-1

100

101100 eV D plasma CFC-N11

Tirr

= 453-463 KPISCES-A, San-Diego

a)

D c

once

ntra

tion

[at.

%]

Depth [m]

= 5x1025 D/m2

= 1x1026 D/m2

b)

Depth [m]

D c

once

ntra

tion

[at.

%]

Dependence on fluence

Joachim Roth, ITPA Shanghai, Jan.06

1019 1020 1021 1022 1023 1024 1025 10261019

1020

1021

1022

1023

1024

PISCES,100eV,200°C

200 eV D+->CFC, 450°C

200 eV D+->CFC, 20°C

Re

tain

ed

Flu

en

ce

(a

t/m

2 )

Incident Fluence (ions/m2)

100 %

0.5

CFC-material: irradiated with 200 eV D ions exposed to 100 eV D plasma

Joachim Roth, ITPA Shanghai, Jan.06

Tungsten

Joachim Roth, ITPA Shanghai, Jan.06

W: exposed to high-flux (1024 D/m2s) 200 eV D plasma

Single crystalline W

0 1 2 3 4 5 6 710-3

10-2

10-1

100

200 eV D plasma polycrystalline W, 2x1024 D/m2

200 eV D plasma W single crystal, 2x1024 D/m2

D c

once

ntra

tion

[at.

%]

Depth [m]

Texp

= 313 K T

exp = 418 K

Texp

= 493 K T

exp = 573 K

Texp

= 638 K

0 1 2 3 4 5 6 710-3

10-2

10-1

100 T

exp = 303 K

Texp

= 373 K T

exp = 413 K

Texp

= 463 K T

exp = 533 K

b)

a)

D c

once

ntra

tion

[at.

%]

Polycrystalline W

Dependence on temperature at 2x1024 D/m2s

Joachim Roth, ITPA Shanghai, Jan.06

W: irradiated with 200 eV D ions

Polycrystalline W

Retention is strongly dependent on material structure.Largest retention in plasma-sprayed coatings

Joachim Roth, ITPA Shanghai, Jan.06

Beryllium

Joachim Roth, ITPA Shanghai, Jan.06

No deep diffusion

Saturation of retention

Be:: irradiated with 200 and 1000 eV D ions

Joachim Roth, ITPA Shanghai, Jan.06

From review of R. Anderl et al., JNM 273 (1999) 1

Be: mainly review of data from 1990’s

D retention saturates. For 1 keV D ion irradiation, saturation is reached at a fluence of 1023 D/m2.

For D ion irradiation at low temperatures (below 400 K), deuterium is trapped in the implantation zone.

When the irradiation temperature increases, the D retention decreases.

Joachim Roth, ITPA Shanghai, Jan.06

Comparison

Joachim Roth, ITPA Shanghai, Jan.06

Total retention of D

Joachim Roth, ITPA Shanghai, Jan.06

Co-deposition in fusion devices

contaminated

clean Be

If C and O fluxesare comparable toBe fluxes, the layer will grow as a BeO with incorporated C and D.

D concentrations vary between ~0.3 D/Be at 300 K and ~0.01 D/Be at 600 K.

400 600 800 1000

0.01

0.1

1

D/C

, D/W

Temperature (K)

Balden, Mayer, Roth (1999)

M. Mayer et al. (1996)

C

W

Be

B

M. Baldwin, K. Schmid et al., 16th PSI Portland (2004)

Temperature (K)

Joachim Roth, ITPA Shanghai, Jan.06

effective sticking

Seff = 0

effective sticking

Seff = 1

0.1% Be

T in carbon layers 4.9 mg T/s 3.7 mg T/s

T in beryllium layers 1.5 mg T/s 1.5 mg T/s

1% Be

T in carbon layers 1.1 mg T/s 0.6 mg T/s

T in beryllium layers 14.8 mg T/s 14.8 mg T/s

Andreas Kirschner, ERO

Assumptions:

T in carbon layers: T/C = 0.05 at target, T/C = 0.5 in remote areas

T in beryllium layers: T/Be = 0.05 (PISCES)

Retention due to co-deposition

Joachim Roth, ITPA Shanghai, Jan.06

4 5 6-5

-4

-3

-2

z (m

)

r (m)

1.000E-6

6.310E-6

3.981E-5

2.512E-4

0.001585

0.01000

iter491 (Ar-Case)

Be wall flux fraction

Be concentrations after wall erosion

Andrei Kukushkin, B2/EireneKlaus Schmid, DIVIMP

Federici B2/Eirene 2 1021 Be/s

Roth/Schmid B2/Eirene+DIVIMP 8 1021 Be/s

Philipps Scaling JET-ITERno size scaling

2 1021 Be/s

Kallenbach Scaling ASDEX UP-ITERwith size scaling

1.2 1023 Be/s

ITPA Tarragona:

0.2% Be

Joachim Roth, ITPA Shanghai, Jan.06

Total retention with ITER material mix

• Initially, implantation into CFC and Be dominates

•The T limit is reached due to co-deposition with C and/or Be

•W not important for inventory