Upload
others
View
1
Download
0
Embed Size (px)
Citation preview
请确认并盖章返回一份
客户/CUSTOMER:
产品规格书PRODUCT SPECIFICATION
产品名称
客户产品型号
供方产品型号
客户确认盖章
signature
and stamp of
authorized
signatory
规格书 NO :
日期 /DATE :
批准: authorize:
审核: check:
拟定: design:
地址:
邮编:
电话:
传真:
网页:
电子信箱 E-mail:
KA5M0765RC产品承认书
CUSTOMER PRODUCT TYPE:
PRODUCT NAME:
CUSTOMER PRODUCT TYPE:
2009-6-20
A
深圳起秀电子商行
深圳市 福田区中航路新亚洲电子城4B025A室
518000
0755 61329742 /61329752
0755 61329743
http://qixiudz.cn.alibaba.com
KA5M0765RC
KA5M0765RC
陈慧
王海成
王海成
电源IC
KA5M0765RC S P SPreliminary
S P S
FEATURES
• Precision fixed operating frequency (70kHz)
• Low start-up current (Typ. 100mA)
• Pulse by pulse current limiting
• Over current protection
• Over voltage protection (Min. 25V)
• Internal thermal shutdown function
• Under voltage lockout
• Internal high voltage sense FET
• Auto-restart mode
ORDERING INFORMATION
Device Package Topr (°°°°C)
KA5M0765RC TO-220F-5L −25°C to +85°C
TO -220F-5L
1. GND 2. Drain 3. Vcc 4. FB
BLOCK DIAGRAM
The SPS product family is specially designed for an off-line SMPSwith minimal external components. The SPS consist of high voltagepower SenseFET and current mode PWM IC.Included PWM controller features integrated fixed frequencyoscillator, under voltage lock-out, leading edge blanking, optimizedgate turn-on/turn-off driver, thermal shutdown protection, overvoltage protection, and temperature compensated precision currentsources for loop compensation and fault protection circuitry.Compared to discrete MOSFET and PWM controller or RCCsolution, a SPS can reduce total component count, design size,weight and at the same time increase efficiency, productivity, andsystem reliability. It has a basic platform well suited for cost-effective design in either aflyback converter or a forward converter.
1999 Fairchild Semiconductor Corporation
REV. B
KA5M0765RCPreliminary
ABSOLUTE MAXIMUM RATINGS
NOTES:1. Tj=25°C to 150°C2. Repetitive rating: Pulse width limited by maximum junction temperature3. L=24mH, starting Tj=25°C4. L=13uH, starting Tj=25°C
Characteristic Symbol Value Unit
Drain-source (GND) voltage (1) VDSS 650 V
Drain-Gate voltage (RGS=1MΩ) VDGR 650 V
Gate-source (GND) voltage VGS ±30 V
Drain current pulsed (2) IDM 28.0 ADC
Single pulsed avalanche energy (3) EAS 570 mJ
Avalanche current (4) IAS 20 A
Continuous drain current (TC=25°C) ID 7.0 ADC
Continuous drain current (TC=100°C) ID 5.6 ADC
Supply voltage VCC 30 V
Analog input voltage range VFB −0.3 to VSD V
Total power dissipation PD (wt H/S) 140 W
Derating 1.11 W/°C
Operating temperature TOPR −25 to +85 °C
Storage temperature TSTG −55 to +150 °C
KA5M0765RC S P SPreliminary
NOTE: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%
ELECTRICAL CHARACTERISTICS (SFET part)
(Ta=25°C unless otherwise specified)
Characteristic Symbol Test condition Min. Typ. Max. Unit
Drain-source breakdown voltage BVDSS VGS=0V, ID=50µA 650 − − V
Zero gate voltage drain current IDSS VDS=Max., Rating, VGS=0V − − 50 µA
VDS=0.8Max., Rating,VGS=0V, TC=125°C
− − 200 µA
Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=0.5A − 1.25 1.6 Ω
Forward transconductance (note) gfs VDS=50V, ID=0.5A 3.0 − − S
Input capacitance Ciss VGS=0V, VDS=25V,f=1MHz
− 1600 − pF
Output capacitance Coss − 310 −
Reverse transfer capacitance Crss − 120 −
Turn on delay time td(on) VDD=0.5BVDSS, ID=1.0A(MOSFET switchingtime are essentiallyindependent ofoperating temperature)
− 25 − nS
Rise time tr − 55 −
Turn off delay time td(off) − 80 −
Fall time tf − 50 −
Total gate charge(gate-source+gate-drain)
Qg VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent ofoperating temperature)
− − 72 nC
Gate-source charge Qgs − 9.3 −
Gate-drain (Miller) charge Qgd − 29.3 −
KA5M0765RCPreliminary
NOTES:1. These parameters, although guaranteed, are not 100% tested in production2. These parameters, although guaranteed, are tested in EDS (wafer test) process
ELECTRICAL CHARACTERISTICS (Control part)
(Ta=25°C unless otherwise specified)
Characteristic Symbol Test condition Min. Typ. Max. Unit
REFERENCE SECTION
Output voltage (1) Vref Ta=25°C 4.80 5.00 5.20 V
Temperature Stability (1)(2) Vref/∆T −25°C≤Ta≤+85°C − 0.3 0.6 mV/°C
OSCILLATOR SECTION
Initial accuracy FOSC Ta=25°C 61 67 73 kHz
Frequency change with temperature (2) ∆F/∆T −25°C≤Ta≤+85°C − ±5 ±10 %
PWM SECTION
Maximum duty cycle Dmax − 74 77 80 %
FEEDBACK SECTION
Feedback source current IFB Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA
Shutdown delay current Idelay Ta=25°C, 5V≤Vfb≤VSD 4 5 6 µA
OVER CURRENT PROTECTION SECTION
Over current protection IL(max) Max. inductor current 4.40 5.00 5.60 A
UVLO SECTION
Start threshold voltage Vth(H) − 8.4 9 9.6 V
Minimum operating voltage Vth(L) After turn on 14 15 16 V
TOTAL STANDBY CURRENT SECTION
Start current IST VCC=14V − 0.1 0.17 mA
Operating supply current(control part only)
IOPR VCC<28 − 7 12 mA
SHUTDOWN SECTION
Shutdown Feedback voltage VSD Vfb>6.5V 6.9 7.5 8.1 V
Thermal shutdown temperature (Tj) (1) TSD − 140 160 − °C
Over voltage protection VOVP VCC>24V 25 27 29 V
KA5M0765RC S P SPreliminary
TYPICAL PERFORMANCE CHARACTERISTICS (SFET part)
0 2 4 6 8 100.0
0.5
1.0
1.5
2.0
2.5
3.0
@ Note : Tj=25
Vgs=10V
Vgs=20V
R DS(on
) , [
]
Drai
n-So
urce
On-
Resi
stan
ce
ID,Drain Current [A]
Fig. 2 Transfer Characteristics Fig 1. Output Characteristics
Fig. 4 Source-Drain Diode Forward Voltage Fig. 3 On-Resistance vs. Drain Current
Fig. 6 Gate Charge vs. Gate-Source Voltage Fig.5 Capacitance vs. Drain-Source Voltage
1 100.1
1
10
@Notes: 1. 300µs Pulse Test 2. TC = 25 oC
VGSTop : 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0VBottom:4.5V
I D, Dra
in C
urre
nt [A
]
VDS, Drain-Source Voltage [V]2 4 6 8 10
0.1
1
10
@ Notes: 1. VDS = 30 V 2. 300 µs Pulse Test
-25 oC25 oC
150 oC
I D, Dra
in C
urre
nt [A
]
VGS, Gate-Source Voltage [V]
0.4 0.6 0.8 1.0 1.2 1.40.1
1
10
@ Notes: 1. VGS = 0V 2. 300 µs Pulse Test
25 oC150 oC
I DR, R
ever
se D
rain
Cur
rent
[A]
VSD, Source-Drain Voltage [V]
1 100
200
400
600
800
1000
1200
1400
1600
1800
Crss
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Capa
citan
ce [p
F]
VDS, Drain-Source Voltage [V]0 5 10 15 20 25
0
2
4
6
8
10
VDS=520V
VDS=320V
VDS=130V
@ Note : ID=3.0A
V GS,G
ate-
Sour
ce V
olta
ge[V
]
QG,Total Gate Charge [nC]
KA5M0765RCPreliminary
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Fig. 7 Breakdown Voltage vs. Temperature Fig. 8 On-Resistance vs. Temperature
Fig. 10 Max. Drain Current vs. Case Temperature Fig. 9 Max. Safe Operating Area
Fig. 11 Thermal Response
-50 0 50 100 1500.8
0.9
1.0
1.1
1.2
@ Notes : 1. VGS = 0V
2. ID = 250µA
TJ, Junction Temperature [oC]
BVDS
S, (No
rmal
ized
)
Drai
n-So
urce
Bre
akdo
wn V
olta
ge
-50 0 50 100 1500.0
0.5
1.0
1.5
2.0
2.5
@ Notes: 1. VGS = 10V 2. ID = 1.5 A
TJ, Junction Temperature [oC]
R DS(o
n), (
Norm
aliz
ed)
Drai
n-So
urce
On-
Resis
tanc
e
100 101 102 10310-2
10-1
100
101
102
10 µs
DC
100 µs1 ms
10 ms
@ Notes : 1. TC = 25
oC
2. TJ = 150 oC
3. Single Pulse
Operation in This Area is Limited by R DS(on)
I D , Drain Current [A]
VDS , Drain-Source Voltage [V]25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
I D, Dr
ain
Curre
nt [A
]
TC, Case Temperature [oC]
10-5 10-4 10-3 10-2 10-1 100 10110-2
10-1
100
single pulse
0.2
0.1
0.010.02
0.05
D=0.5
@ Notes : 1. ZθJC(t)=1.25
oC/W Max.
2. Duty Factor, D=t1/t2 3. TJM-TC=PDM*ZθJC(t)
Z θJC(t) , Thermal Response
t1 , Square Wave Pulse Duration [sec]
KA5M0765RC S P SPreliminary
TYPICAL PERFORMANCE CHARACTERISTICS (Control part)
Fig.1 Operating Frequency
0.80.850.9
0.951
1.051.1
1.151.2
Fosc
Fig.2 Feedback Source Current
0.80.850.9
0.951
1.051.1
1.151.2
-25 0 25 50 75 100 125 150
Ifb
Fig.3 Operating Current
0.80.850.9
0.951
1.051.1
1.151.2
-25 0 25 50 75 100 125 150
Iop
Fig.4 Max Inductor Current
0.8
0.85
0.9
0.95
1
1.05
1.1
-25 0 25 50 75 100 125 150
Ipeak
Fig.5 Start up Current
0.5
0.7
0.9
1.1
1.3
1.5
-25 0 25 50 75 100 125 150
Istart
Fig.6 Start Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vstart
KA5M0765RCPreliminary
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(These characteristic graphs are normalized at Ta=25°C)
Fig.7 Stop Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vstop
Fig.8 Maximum Duty Cycle
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Dmax
Fig.9 Vcc Zener Voltage
0.80.850.9
0.951
1.051.1
1.151.2
-25 0 25 50 75 100 125 150
Vz
Fig.10 Shutdown Feedback Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vsd
Fig.11 Shutdown Delay Current
0.80.850.9
0.951
1.051.1
1.151.2
-25 0 25 50 75 100 125 150
Idelay
Fig.12 Over Voltage Protection
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vovp
KA5M0765RC S P SPreliminary
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(These characteristic graphs are normalized at Ta=25°C)
Fig.13 Soft Start Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vss
Fig.14 Drain Source Turn-onResistance
0
0.5
1
1.5
2
2.5
-25 0 25 50 75 100 125 150
Rdson
Environmental Questionnaire Disclaimer The information provided in this environmental statement is, to our knowledge, correct as of the date indicated on this page. However, there is no guarantee to completeness or accuracy, as some information is derived from data sources outside the company. Also, there may not be information included in this statement regarding the minute amounts of dopant and metal materials contained within the electrically active or passive devices contained within the finished product.
Fairchild Semiconductors Statement Regarding the Restriction of Hazardous Substances
This document is Fairchild Semiconductor’s statement regarding the directive of the European Parliament and of the council on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS directive). The responses in the document are based upon information collected from Fairchild Semiconductor facilities worldwide, specifically our manufacturing sites in: South Portland, Maine, USA; West Jordan, Utah, USA; Mountaintop, Pennsylvania, USA; Loveland, Colorado, USA; Penang, Malaysia; Cebu, Philippines; Bucheon, Korea; Suzhou China; and Singapore. Products manufactured by Fairchild Semiconductor are in compliance with the RoHS directive. Specifically, products manufactured by Fairchild Semiconductor do not contain the substances listed in the table below in concentrations greater than the listed Maximum limit value.
Substance Maximum Limit (ppm) Cadmium (Cd) 100 Lead (Pb) 1000 (1) (2) Mercury (Hg) 1000 Hexavalent Chromium (Cr6+) 1000 Poly Brominated Biphenyls (PBB) 1000 Poly Brominated Diphenyl ethers (PBDE) 1000
(1) Applicable to FSC products with Pb-free lead finish only (2) Maximum limit does not apply to applications for which exemptions have been granted by the RoHS directive Name: David Lancaster Position: Staff Environmental Engineer
Signature: Date: May 9, 2006
SGS