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Quantum dot development

Keist Fair 2009

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quantum materials

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  • Quantum dot development

  • 1. 2. , 3. 4. 5.

    6. 7. 8. 9.

    10. 11. 12.

    .

    .

    .

  • 1.

    .

    Bulk ( > 60~70%)

  • .

    2. ,

    Tunable band gap band gap

    optical filter

    LED, display

    : ,

    Solar cell LED Telecom. biolabelling

  • .

    3.

    1)

    ( >80%, ~27nm)

    2) Pb

    tetrapod, ~26nm

    3)

    ZnS capping

    (ESP) Slot-die coating /

    -

    -Slot-die coating (: Rq=13nm 1.2nm)

  • .

    4.

    e

    h

    e

    h

    Core/shell

    CB

    VB

    CB

    VB

    e

    h

    Core/shell

    CB

    VB

    (QY~%)

    (QY ~ %)

    -Lattice mismatch strain

    -shell : < 2ML

    (QY > 80%)

    - strain -

  • .

    4.

    20 30 40 50 60 70-150

    -100

    -50

    0

    50

    100

    150

    200

    250

    300

    350

    400

    CdSe

    Se:S=2:2

    a=5.99

    Se:S=1:3

    a=5.93

    Inte

    nsit

    y (

    cp

    s)

    2Theta (deg.)

    Cd/(S+Se) = 8

    (anion-limited)

    Cd(Se,S) Alloy

    Change in lattice parameters cf. CdSe: a=6.077 Cd(Se,S) [Se:S=2:2]: a=5.991 Cd(Se,S) [Se:S=1:3]: a=5.93 CdS: a=5.811

    X-ray diffraction of CdSeS NCs

    Te Se Conc.

    (Composition-gradient)

    Cd/(Te+Se) >> 1 (anion-limited)

    Composition of reactant

    Core/shell-like structure (R.E. Bailey, S. Nie, JACS, 125, 7100, 2003)

    Te Se Conc.

  • Reaction time

    (Room light) (UV light, l~310nm)

    Reaction time

    500 550 600 650 700 750 8000.0

    3.0k

    6.0k

    9.0k

    12.0k

    Em

    issio

    n in

    ten

    sit

    y (

    A.U

    .)

    Wavelength (nm)

    Cd/(S+Se)=8

    Cd/(S+Se)=2

    Cd/(S+Se)=1

    Cd(S,Se)

    490nm excit. -Cd/(Se+S) Cd-Se Cd-S core shell

    - ~ 27nm - (QY) : 80%

    .

    4.

  • 20 30 40 50 60 70

    (20

    3)(1

    12

    )

    (10

    3)

    (11

    0)

    (10

    1)

    (00

    2)

    x=0.05

    x=0

    x=0.10

    x=0.20

    2 theta (deg.)

    (10

    0)

    x=0

    50nm

    x=0.05

    50nm

    x=0.2

    50nm

    Cd1-xPbxSe TEM

    Cd1-xPbxSe:

    -

    -

    - Pb

    Undoped CdSe:

    -

    (: 2~3nm)

    Pb-

    .

    4.

  • Cd1-xPbxSe:

    - Anisotropic growth

    - Tetrapod shape

    (diameter ~ 2.4nm, length~ 20nm)

    - Cubic core-hexagonal branch

    0.35nm

    hexagonal

    cubic

    5nm

    ZnS capping:

    - ZnS epitaxial growth

    - Surface trap

    - (QY~21%)

    - FWHM: 26.7nm

    400 500 600 700 8000

    20

    40

    60

    80

    100

    120

    140

    160

    Cd0.95

    Pb0.05

    Se

    Em

    issio

    n

    Wavelength (nm)

    Cd0.95

    Pb0.05

    Se/ZnS

    QY=21.2%

    400 500 600 700 8000

    1

    2

    3

    Ab

    so

    rban

    ce

    Wavelength(nm)

    Cd0.95

    Pb0.05

    Se

    Cd0.95

    Pb0.05

    Se/ZnS

    .

    4.

  • Syringe pump

    Unwinder

    Powder brake

    Rotary encoder

    Winder

    DC motor

    Slot-die

    Flexible substrates

    Multi-zone furnace

    PET/ITO tape (40mm x 50m) ( )

    ( 2009.06.22 , 10-2009-0055407 )

    :

    Gas

    .

    4.

    Slot-die coating

  • , coating speed die gap Rq~1.2nm

    Rq~1.2nm Rq~13nm

    (PET/ITO)

    (TPD) coating

    .

    4.

  • .

    5.

    -

    - () > 85%

    - TDPA Oleic acid

    -

    -

    -

  • .

    6.

    Quantum dot; Technical status and market prospects, BCC Research (2008)

    (: $3000~$10000/g)

    - (2008): $28.6M (colloidal sol. only)

    -5 (2013): $721.1M $721.1M optoelectronics (LED , $245.7M )

    - ()

    : (2006. 3 ), QD (2009. 4 )

    -

    : (), (), ,

  • .

    10.

    - ,

    ,

    ,

    .

    - (electronic device)

    scale-up

    -

    ,

    .

  • .

    12.

    ()

    1. , , , ( , 2009 9 14, 10-2009-0055407))

    2. , , , ( , 2009 6 22, 10-2009 -0055407)) 3. , , , ( , 2009 7 16, 10-2009-0064705)

    ()

    1. , , , Hole transporting layer for light emitting devices and solar cells and method for manufacturing the same ( PCT , 2009 9 17, PCT/KR2009/005309)