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TRƯỜNG ĐẠI HC CÔNG NGHTHÔNG TIN KHOA KTHUT MÁY TÍNH ------------------------------ KTHUT CHTO VI MCH Bài tp ln 1 Thành viên nhóm: nhóm 15. Ging viên: Nguyn Trần Sơn 1.Nguyn Trọng Nghĩa 10520318 2.Nguyn Thành Liêm 10520601 3.Nguyn Nht Quân 10520625 4.Bùi Văn Thu 10520549

Kỹ Thuật Chế Tạo Vi Mạch_CE404.F11_Nhóm 15

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Bài tập chương I -II

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  • TRNG I HC CNG NGH THNG TIN

    KHOA K THUT MY TNH

    ------------------------------

    K THUT CH TO VI MCH

    Bi tp ln 1

    Thnh vin nhm: nhm 15. Ging vin: Nguyn Trn Sn

    1.Nguyn Trng Ngha 10520318

    2.Nguyn Thnh Lim 10520601

    3.Nguyn Nht Qun 10520625

    4.Bi Vn Thu 10520549

  • 1.3

    a) calculate an estimate of the number of 20-mm x 20-mm dice on a 300-mm diameter wafer, in

    terms of the total wafer and die areas.

    Solution: din tch b mt wafer: x = 70685 )

    Din tch mt vung 20 x 20 = 400 ( )

    Vy c th ch to c s dice trn wafer 282743/400 = 176 ( dice )

    b) calculate the exact number of 20-mm x 20-mm dice that actually fit on the 300-mm wafer. (it may

    help to draw a picture).

    tnh chnh xc s lng dice l 148 dice

    300mm 20mm

  • 1.10 an 18-mm x 25-mm die is covered by an array of 0.25m metal line separated by 0.25m wire

    spaces.

    a) what is the total length of wire on this die ?

    rng ca dy v khong trng l 0.25 + 0.25 = 0.5 m

    Ta xem nh metal i theo chiu dc l 25 mm

    Vy theo chiu ngang, s dy metal c to 18000 / 0.5 = 36000

    Tng chiu di dy metal 36000 x 25 = 900000 mm

    b) how about 0.1-m line and spares.

    rng ca dy v khong trng l 0.1 + 0.1 = 0.2 m

    Tng chiu di dy metal 18000/0.2*25 =2250000 mm

    2.1 A complex CMOS fabrication process require 25 masks

    a) what fraction of the dice must be good (what yield must be obtained)during each mask step if we

    require 30% of the final dice to be good?

    Sau 25 cng on th s dice tt cn li 30% ta s dng cng thc quy, gi s dice tt trong mi

    cng on l X ta c

    100. = 30 => X = 95,298%

    Vy mi cng on ta phi c 95,3% thnh phn t cht lng

    b) how about if we require 70% to be good?

    c c sn 70% sn phm c cht lng th

    100. = 70 => X = 98,58 %

  • 2.3

  • 2.8 an extreme utra violet (EUV) lithography source uses a 13-mm exposure wavelength. Based

    upon the discussion in Section 2.4, what is the smallest feature size F that can be reproduced with

    this source ?

    Ta c cng thc lin h gia size F v bc sng F=

    Theo Section 2.4 ta cho NA = 0.5 vy F

    = 13 mm

    Vy F smallest = 13 mm