Laser Single Event Latchup Latent Damage Test Results for Maxwell 7809LPRP for GLORY

Scott Kniffin1, Steven Buchner2, Phil Layton3

1. NASA GSFC/Orbital Sciences Corporation 2. NASA GSFC/QSS Corporation 3. Maxwell Technologies

TEST DATE: July - September 2005 REPORT DATE: January 2006

I. INTRODUCTION This study was undertaken to determine the single event latchup (SEL) latent damage sensitivity by laser stimulation of the Maxwell 7809LPRP 16-bit A/D Converter for GLORY. Laser testing was done at Naval Research Laboratory’s Pulsed Laser SEE Test Facility. The output of the device was monitored for laser-induced latchup.

II. DEVICES TESTED The 7809LPRP is a custom packaged 16-bit A/D converter with Maxwell’s RadPak shielding and a custom latchup recovery ASIC. There were five devices under test (DUTs). Each DUT was illuminated with the NRL laser. The devices were delidded before exposure. It was noted that the device metalization was <50%, which is acceptable for laser testing because the laser can be placed to hit sensitive regions under the metalization through charge diffusion. The devices used in this testing were picked out of the packaging line at Maxwell prior to device lid and Rad-Pak encapsulant application. The DUTs were marked only with their serial numbers and there is no specific lot date code for these devices. The DUT serial numbers were: 1, 2, 965, 978, and 1011.

III. TEST FACILITIES Laser Test Facility: Naval Research Laboratory Pulsed Laser SEE Test Facility. Laser Information: Ion-induced single event effects were simulated in the circuit under test using short, high-intensity pulses of light produced by the Naval Research Laboratory’s Pulsed Laser SEE Test Facility. The laser light was generated using a combination of two lasers – a Nd:YLF solid-state laser and a liquid dye laser. The Nd:YLF laser emitted pulses of light with a wavelength of 1.053 nm, which was first frequency-doubled (wavelength = 520 nm) before being used to pump the liquid dye. Emission from the dye laser was controlled by a cavity dumper, which could be adjusted to provide pulse rates from single shot to many MHz. The light emitted by the dye laser had a wavelength of 590 nm and a nominal pulse width of 1ps. At that wavelength the light decays exponentially into the silicon with a 1/e depth of 2 microns. Numerous optical components were used to produce a Gaussian beam whose intensity could be adjusted with the use of neutral density filters. A beam splitter was used to reflect about 5% of the light out of the beam and direct it at a fast photodiode for monitoring light intensity. A microscope objective lens with a magnification of 100X and working distance of 3 mm was used to focus the light down to a spot with a diameter of just over 1 micron. The test circuit was mounted on an X-Y stage having a minimum step size of 0.1 microns. Specific locations in the circuit were probed with the laser light by moving the device until the focused laser light was positioned on the desired location. Two additional beam splitters were used - one to illuminate the device and the other to direct the light reflected from the device’s surface onto a CCD camera. The resulting image was observed on a video monitor. The amount of energy required to produce a SEE was determined by gradually increasing the beam intensity using neutral density

filters until SEEs were observed. The energy at which SEEs were first observed was noted from the response of the fast photodiode. To calculate the exact energy per pulse incident on the device, use was made of a multiplicative factor obtained from calibrating the light throughput prior to the experiment. Electrical Parameter Test Facility: Maxwell Technologies LTS2020 production tester.

IV. TEST METHODS Case Temperature: ambient in air Test Hardware: A custom test set, comprising a custom evaluation board, a power supply, and a laptop computer, was used to supply input to the DUT, monitor the DUT output and monitor the power supply current. Software: Customized LABVIEW software provided a user interface to control signals to the DUT. The software also automatically monitored the DUT input, output and power supply current and generated an SEU file history. Test Techniques: Each DUT was exposed to the laser in order to induce at least one SEL in each of the latchable locations that could be found on the 7809 die. See figure below for detail of latchable areas. No particular effort was made to determine the effective LET as this was intended to solely be a latent damage test. Following exposure at NRL, the devices were shipped to Maxwell for the screening. In order to best simulate the stress of operation on the devices and thereby determine their latent damage susceptibility, the devices were subjected to an accelerated life test with testing done as follows. The devices were initially tested on Maxwell’s LTS2020 production tester prior to the life test. The devices were dynamically biased and subjected to 1000 hours at 125°C, electrically tested a second time, biased for 3 weeks at room temperature, and electrically tested a third time.

Figure 1: MAX7809LPRP regions of SEL sensitivity highlighted on left side of die. No other regions exhibited SEL sensitivity with the laser.

V. RESULTS After each of the three electrical tests, all devices remained functional. Only two anomalies were noted during testing. Prior to life testing, DUT 965 exceeded the specification limit of 5mV for Unipolar Zero Error with a reading of 5.718mV. After 1000 hours at 125°C, this reading for DUT 965 was well within the specification limit. Following the 1000-hour life test, DUTs 1 and 978 also exceeded the specification limit of 5mV for Unipolar Zero Error with readings of 7.509mA and 5.346mV respectively. After 3 weeks at room temperature, these readings on these two DUTs also returned to within specification limits. Neither of these anomalies should be regarded as a failure due to latent damage. A table of results is presented below. No evidence of latent damage was found for these devices in this configuration.

IOZH @ +5V

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IOZL @ 0V DATA CLOCK

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VOH @ 0.5MA - DATA

VOL @ 1.6MA - SYNC

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PSRR VDD=4.75 TO 5.2V

UNIPOLAR ZERO ERROR

UNIPOLAR F.S.

ERROR Int Vref

BIPOLAR ZERO

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CODE WIDTH (DNL) LONG

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SHORT[ -10 TO

10 ][ -10 TO

10 ] [ 4 TO 5 ] [ 4 TO 5 ][ 0 TO 0.4

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] [ 1 TO 4 ] [ -1 TO 1 ][ -0.5 TO

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] [ 1 TO 4 ] [ -1 TO 1 ]Units µA µA V V V V V LSB mV %FSR mV %FSR %FSR LSB LSB LSB LSB %FSR %FSR %FSR LSB LSB LSB LSBPre Life Test

1 0.01 -0.08 4.885 -0.062 0.21 0.21 0.211 -3.956 2.173 0.269 1.188 0.223 0.207 2.601 -1.923 2.941 0 0.01 -0.0052 0.01 -0.08 4.884 -0.061 0.206 0.207 0.207 -4.184 2.346 0.105 0.254 0.159 0.16 2.263 -1.584 2.15 0 0.004 0.008

965 0.01 -0.08 4.882 4.848 0.209 0.21 0.211 -4.407 5.718 0.322 2.503 0.241 0.204 2.714 -1.923 2.262 0 -0.005 -0.04978 0.02 -0.08 4.881 4.847 0.212 0.212 0.214 -4.18 2.951 0.387 2.088 0.229 0.198 2.601 -1.357 2.036 0 -0.033 -0.064

1011 0.01 -0.08 4.883 4.847 0.212 0.212 0.213 -3.39 0.616 0.354 -0.057 0.249 0.258 2.261 -1.583 2.035 0 0.01 0.02Average 0.012 -0.08 4.88 2.88 0.210 0.210 0.21 -4.0 2.8 0.2874 1.1952 0.2202 0.2054 2.49 -1.67 2.28 0.00 0.00 -0.02Stdev 0.00 0.00 0.00 2.69 0.002 0.002 0.00 0.4 1.9 0.11 1.11 0.04 0.03 0.21 0.25 0.38 0.00 0.02 0.03Post Life Test

1 0.01 -0.09 4.873 4.837 0.201 0.202 0.202 -3.399 7.509 0.235 1.914 0.234 0.202 2.602 -1.81 2.376 0 -0.222 -0.252 0.02 -0.09 4.873 4.835 0.203 0.203 0.204 -2.832 2.492 0.345 -0.473 0.264 0.28 2.262 -1.809 2.035 0 -0.219 -0.201

965 0.01 -0.09 4.871 4.834 0.203 0.204 0.206 -3.738 4.049 0.318 1.326 0.216 0.197 2.489 -1.697 2.263 0 -0.263 -0.279978 0.01 -0.09 4.874 4.837 0.198 0.198 0.199 -3.625 5.346 0.322 1.43 0.257 0.238 2.715 -2.036 2.036 0 -0.226 -0.242

1011 0.01 -0.09 4.873 4.839 0.198 0.198 0.199 -4.193 3.962 0.19 0.634 0.2 0.194 2.15 -1.584 2.489 0 -0.227 -0.232Average 0.012 -0.09 4.87 4.84 0.201 0.201 0.20 -3.6 4.7 0.282 0.9662 0.2342 0.2222 2.44 -1.79 2.24 0.00 -0.23 -0.24Stdev 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.50 1.88 0.07 0.93 0.03 0.04 0.23 0.17 0.20 0.00 0.02 0.03Post LT + Anneal

1 0.01 -0.07 4.885 4.848 0.209 0.209 0.21 -3.388 1.263 0.249 0.07 0.227 0.232 2.373 -1.469 3.051 0 0.003 0.0092 0.01 -0.07 4.884 4.847 0.211 0.211 0.212 -3.161 -0.983 0.357 -1.658 0.26 0.299 2.485 -1.468 2.146 0 0 0.041

965 0.01 -0.07 4.882 4.848 0.212 0.212 0.213 -4.176 1.436 0.34 0.243 0.224 0.23 2.373 -1.356 2.147 0 -0.046 -0.037978 0.01 -0.07 4.883 4.851 0.206 0.206 0.207 -4.176 3.51 0.33 0.865 0.258 0.252 2.824 -1.808 2.146 0 -0.008 -0.011

1011 0.01 -0.07 4.884 4.85 0.206 0.206 0.207 -4.066 1.35 0.184 -0.068 0.193 0.202 2.035 -1.582 2.261 0 -0.006 0.005Average 0.01 -0.07 4.88 4.85 0.209 0.209 0.21 -3.8 1.3 0.292 -0.1096 0.2324 0.243 2.42 -1.54 2.35 0.00 -0.01 0.00Stdev 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.48 1.59 0.07 0.94 0.03 0.04 0.28 0.17 0.39 0.00 0.02 0.03

External Voltage Reference =2.5 V

7/27/2005 7:51

9/7/2005 14:50

9/28/2005 5:43

IOZH @ +5V

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UNIPOLAR ZERO ERROR

UNIPOLAR F.S.

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BIP. NEG.

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CODE WIDTH (DNL) LONG

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SHORT[ -10 TO

10 ][ -10 TO

10 ] [ 4 TO 5 ] [ 4 TO 5 ][ 0 TO 0.4

][ 0 TO 0.4

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] [ 1 TO 4 ] [ -1 TO 1 ]Units µA µA V V V V V LSB mV %FSR mV %FSR %FSR LSB LSB LSB LSB %FSR %FSR %FSR LSB LSB LSB LSBPre Life Test

1 0.01 -0.08 4.885 -0.062 0.21 0.21 0.211 -3.956 2.173 0.269 1.188 0.223 0.207 2.601 -1.923 2.941 0 0.01 -0.0052 0.01 -0.08 4.884 -0.061 0.206 0.207 0.207 -4.184 2.346 0.105 0.254 0.159 0.16 2.263 -1.584 2.15 0 0.004 0.008

965 0.01 -0.08 4.882 4.848 0.209 0.21 0.211 -4.407 5.718 0.322 2.503 0.241 0.204 2.714 -1.923 2.262 0 -0.005 -0.04978 0.02 -0.08 4.881 4.847 0.212 0.212 0.214 -4.18 2.951 0.387 2.088 0.229 0.198 2.601 -1.357 2.036 0 -0.033 -0.064

1011 0.01 -0.08 4.883 4.847 0.212 0.212 0.213 -3.39 0.616 0.354 -0.057 0.249 0.258 2.261 -1.583 2.035 0 0.01 0.02Average 0.012 -0.08 4.88 2.88 0.210 0.210 0.21 -4.0 2.8 0.2874 1.1952 0.2202 0.2054 2.49 -1.67 2.28 0.00 0.00 -0.02Stdev 0.00 0.00 0.00 2.69 0.002 0.002 0.00 0.4 1.9 0.11 1.11 0.04 0.03 0.21 0.25 0.38 0.00 0.02 0.03Post Life Test

1 0.01 -0.09 4.873 4.837 0.201 0.202 0.202 -3.399 7.509 0.235 1.914 0.234 0.202 2.602 -1.81 2.376 0 -0.222 -0.252 0.02 -0.09 4.873 4.835 0.203 0.203 0.204 -2.832 2.492 0.345 -0.473 0.264 0.28 2.262 -1.809 2.035 0 -0.219 -0.201

965 0.01 -0.09 4.871 4.834 0.203 0.204 0.206 -3.738 4.049 0.318 1.326 0.216 0.197 2.489 -1.697 2.263 0 -0.263 -0.279978 0.01 -0.09 4.874 4.837 0.198 0.198 0.199 -3.625 5.346 0.322 1.43 0.257 0.238 2.715 -2.036 2.036 0 -0.226 -0.242

1011 0.01 -0.09 4.873 4.839 0.198 0.198 0.199 -4.193 3.962 0.19 0.634 0.2 0.194 2.15 -1.584 2.489 0 -0.227 -0.232Average 0.012 -0.09 4.87 4.84 0.201 0.201 0.20 -3.6 4.7 0.282 0.9662 0.2342 0.2222 2.44 -1.79 2.24 0.00 -0.23 -0.24Stdev 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.50 1.88 0.07 0.93 0.03 0.04 0.23 0.17 0.20 0.00 0.02 0.03Post LT + Anneal

1 0.01 -0.07 4.885 4.848 0.209 0.209 0.21 -3.388 1.263 0.249 0.07 0.227 0.232 2.373 -1.469 3.051 0 0.003 0.0092 0.01 -0.07 4.884 4.847 0.211 0.211 0.212 -3.161 -0.983 0.357 -1.658 0.26 0.299 2.485 -1.468 2.146 0 0 0.041

965 0.01 -0.07 4.882 4.848 0.212 0.212 0.213 -4.176 1.436 0.34 0.243 0.224 0.23 2.373 -1.356 2.147 0 -0.046 -0.037978 0.01 -0.07 4.883 4.851 0.206 0.206 0.207 -4.176 3.51 0.33 0.865 0.258 0.252 2.824 -1.808 2.146 0 -0.008 -0.011

1011 0.01 -0.07 4.884 4.85 0.206 0.206 0.207 -4.066 1.35 0.184 -0.068 0.193 0.202 2.035 -1.582 2.261 0 -0.006 0.005Average 0.01 -0.07 4.88 4.85 0.209 0.209 0.21 -3.8 1.3 0.292 -0.1096 0.2324 0.243 2.42 -1.54 2.35 0.00 -0.01 0.00Stdev 0.00 0.00 0.00 0.00 0.00 0.00 0.00 0.48 1.59 0.07 0.94 0.03 0.04 0.28 0.17 0.39 0.00 0.02 0.03

External Voltage Reference =2.5 V

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9/7/2005 14:50

9/28/2005 5:43