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LB P4SG
1 Version 1.5 | 2020-06-04
Produktdatenblatt | Version 1.1 www.osram-os.com
Applications
LB P4SG
PointLED® With a diameter of just 2 mm, the PointLED is one of the smallest packages in its class and achieves high luminous efficacies. Due to its round and flat package, measuring only 0.775 mm high, it is ideal for application where space is a sensitive issue.
— Cluster, Button Backlighting
— Electronic Equipment
— Gaming, Amusement, Gambling
— Interior Illumination (e.g. Ambient Map)
— Transportation, Plane, Ship
— White Goods
Features: — Package: white SMT package, colorless clear silicone resin
— Chip technology: ThinGaN
— Typ. Radiation: 120° (Lambertian emitter)
— Color: λdom = 470 nm (● blue)
— Corrosion Robustness Class: 1B
— Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. — ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
LB P4SG
2 Version 1.5 | 2020-06-04
Ordering Information
Type Luminous Intensity 1) Ordering CodeIF = 20 mAIv
LB P4SG-S2U1-35-45 224 ... 560 mcd Q65113A0985
LB P4SG-S2U1-35-45-F 224 ... 560 mcd Q65113A0986
LB P4SG
3 Version 1.5 | 2020-06-04
Maximum RatingsParameter Symbol Values
Operating Temperature Top min. max.
-40 °C 100 °C
Storage Temperature Tstg min. max.
-40 °C 100 °C
Junction Temperature Tj max. 125 °C
Forward current TS = 25 °C
IF min. max.
3 mA 20 mA
Surge Current t ≤ 10 µs; D = 0.005 ; TS = 25 °C
IFS max. 200 mA
Reverse voltage 2) TS = 25 °C
VR max. 12 V
ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
VESD 2 kV
LB P4SG
4 Version 1.5 | 2020-06-04
CharacteristicsIF = 20 mA; TS = 25 °C
Parameter Symbol Values
Peak Wavelength λpeak typ. 465 nm
Dominant Wavelength 3) IF = 20 mA
λdom min. typ. max.
464 nm 470 nm 476 nm
Spectral Bandwidth at 50% Irel,max ∆λ typ. 25 nm
Viewing angle at 50% IV 2φ typ. 120 °
Forward Voltage 4) IF = 20 mA
VF min. typ. max.
2.90 V 3.00 V 3.50 V
Reverse current 2) VR = 12 V
IR typ. max.
0.01 µA 10 µA
Temperature Coefficient of Peak Wavelength -10°C ≤ T ≤ 100°C
TCλpeak typ. 0.04 nm / K
Real thermal resistance junction/solderpoint 5) RthJS real max. 240 K / W
LB P4SG
5 Version 1.5 | 2020-06-04
Brightness Groups
Group Luminous Intensity 1) Luminous Intensity. 1) Luminous Flux 6)
IF = 20 mA IF = 20 mA IF = 20 mAmin. max. typ.Iv Iv ΦV
S2 224 mcd 280 mcd 760 mlm
T1 280 mcd 355 mcd 950 mlm
T2 355 mcd 450 mcd 1210 mlm
U1 450 mcd 560 mcd 1520 mlm
Forward Voltage Groups
Group Forward Voltage 4) Forward Voltage 4)
IF = 20 mA IF = 20 mAmin. max.VF VF
4 2.90 V 3.20 V
5 3.20 V 3.50 V
Wavelength Groups
Group Dominant Wavelength 3) Dominant Wavelength 3)
IF = 20 mA IF = 20 mAmin. max.λdom λdom
3 464 nm 468 nm
4 468 nm 472 nm
5 472 nm 476 nm
LB P4SG
6 Version 1.5 | 2020-06-04
Group Name on Label Example: S2-3-4Brightness Wavelength Forward Voltage
S2 3 4
LB P4SG
7 Version 1.5 | 2020-06-04
Relative Spectral Emission 6)
Irel = f (λ); IF = 20 mA; TS = 25 °C
LB P4SG
350 400 450 500 550 600 650 700 750 800
λ [nm]
0,0
0,2
0,4
0,6
0,8
1,0Irel
: Vλ
Radiation Characteristics 6)
Irel = f (ϕ); TS = 25 °CLB P4SG
-100°
-90°
-80°
-70°
-60°
-50°
-40°
-30°
-20°-10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90°
ϕ [°]
0,0
0,2
0,4
0,6
0,8
1,0Irel
LB P4SG
8 Version 1.5 | 2020-06-04
Forward current 6)
IF = f(VF); TS = 25 °CLB P4SG
2.6 3.72.8 3.0 3.2 3.4 3.6
VF / V
3
20
40
60
80
100IF / mA
Relative Luminous Intensity 6), 7)
Iv/Iv(20 mA) = f(IF); TS = 25 °CLB P4SG
310
03 4 5 10 20 30 40 50
IF / mA
0.2
0.3
0.4
0.5
1
2
3
IVIV(20mA)
Dominant Wavelength 6)
Δλdom = f(IF); TS = 25 °CLB P4SG
3 20 40 60 80 100
IF / mA
-6
-4
-2
0
2
4
6
8∆λ dom / nm
LB P4SG
9 Version 1.5 | 2020-06-04
Forward Voltage 6)
ΔVF = VF - VF(25 °C) = f(Tj); IF = 20 mALB P4SG
-40 -20 0 20 40 60 80 100 120
Tj / °C
-0.3
-0.2
-0.1
0.0
0.1
0.2
0.3∆VF / V
Relative Luminous Intensity 6)
Iv/Iv(25 °C) = f(Tj); IF = 20 mALB P4SG
-40 -20 0 20 40 60 80 100 120
Tj / °C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4IvIv(25°C)
Dominant Wavelength 6)
Δλdom = λdom - λdom(25 °C) = f(Tj); IF = 20 mALB P4SG
-40 -20 0 20 40 60 80 100 120
Tj / °C
-8
-6
-4
-2
0
2
4
6
8
10∆λ dom / nm
LB P4SG
10 Version 1.5 | 2020-06-04
Max. Permissible Forward CurrentIF = f(T)
OHL02567
00
ImA
F
˚CT
temp. ambienttemp. solder point
TTS
A
AT
TS
5
10
15
20
25
20 40 60 80 100
Permissible Pulse Handling CapabilityIF = f(tp); D: Duty cycle; TS = 25 °C
10100
-2-3-4-5 1010 10
FI APt=D T
210-1 10tp
10 s 10
OHL02565
T
tP
IF
0.02
0.50.2
0.050.1
D =0.0050.01
1
0.05
0.10
0.15
0.20
0.25
Permissible Pulse Handling CapabilityIF = f(tp); D: Duty cycle; TS = 85 °C
10100
-2-3-4-5 1010 10
FI APt=D T
210-1 10tp
10 s 10
OHL02566
T
tP
IF
0.02
0.50.2
0.050.1
D =0.0050.01
1
0.05
0.10
0.15
0.20
0.25
LB P4SG
11 Version 1.5 | 2020-06-04
Dimensional Drawing 8)
Further Information:
Approximate Weight: 6.0 mg
Corrosion test: Class: 1B Test condition: 25°C / 75 % RH / 200ppb SO2, 200ppb NO2, 10ppb H2S, 10ppb Cl2 / 21 days (EN 60068-2-60 (Method 4))
LB P4SG
12 Version 1.5 | 2020-06-04
Recommended Solder Pad 8)
Recommended Solder Pad 8)
For superior solder joint connectivity results we recommend soldering under standard nitrogen atmosphere. Package not suitable for ultra sonic cleaning.
LB P4SG
13 Version 1.5 | 2020-06-04
Reflow Soldering ProfileProduct complies to MSL Level 2 acc. to JEDEC J-STD-020E
00
s
OHA04525
50
100
150
200
250
300
50 100 150 200 250 300t
T
˚C
St
t
Pt
Tp240 ˚C
217 ˚C
245 ˚C
25 ˚C
L
Profile Feature Symbol Pb-Free (SnAgCu) Assembly UnitMinimum Recommendation Maximum
Ramp-up rate to preheat*)
25 °C to 150 °C2 3 K/s
Time tSTSmin to TSmax
tS 60 100 120 s
Ramp-up rate to peak*)
TSmax to TP
2 3 K/s
Liquidus temperature TL 217 °C
Time above liquidus temperature tL 80 100 s
Peak temperature TP 245 260 °C
Time within 5 °C of the specified peaktemperature TP - 5 K
tP 10 20 30 s
Ramp-down rate*TP to 100 °C
3 6 K/s
Time25 °C to TP
480 s
All temperatures refer to the center of the package, measured on the top of the component* slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range
LB P4SG
14 Version 1.5 | 2020-06-04
Taping 8)
Taping 8)
LB P4SG
15 Version 1.5 | 2020-06-04
Tape and Reel 9)
Reel DimensionsA W Nmin W1 W2 max Pieces per PU
180 mm 8 + 0.3 / - 0.1 mm 60 mm 8.4 + 2 mm 14.4 mm 3000
LB P4SG
16 Version 1.5 | 2020-06-04
Barcode-Product-Label (BPL)
Dry Packing Process and Materials 8)
OHA00539
OSRAM
Moisture-sensitive label or print
Barcode label
Desiccant
Humidity indicator
Barcode label
OSRAM
Please check the HIC immidiately afterbag opening.
Discard if circles overrun.Avoid metal contact.
WET
Do not eat.
Comparatorcheck dot
parts still adequately dry.
examine units, if necessary
examine units, if necessary
5%
15%
10%bake units
bake units
If wet,
change desiccant
If wet,
Humidity IndicatorMIL-I-8835
If wet,
Mois
ture
Level 3
Flo
or tim
e 168 H
ours
Mois
ture
Level 6
Flo
or tim
e 6
Hours
a) H
umid
ity In
dicato
r C
ard is
> 1
0% w
hen read a
t 23 ˚
C ±
5 ˚C
, or
reflo
w, v
apor-phase r
eflow
, or equiv
alent p
rocessin
g (peak p
ackage
2. Afte
r th
is b
ag is o
pened, devic
es that w
ill b
e subje
cted to
infrare
d
1. Shelf
life in
seale
d bag: 2
4 month
s at <
40 ˚
C a
nd < 9
0% rela
tive h
umid
ity (R
H).
Mois
ture
Level 5
a
at facto
ry c
onditions o
f
(if b
lank, s
eal date
is id
entical w
ith d
ate c
ode).
a) M
ounted w
ithin
b) S
tore
d at
body tem
p.
3. Devic
es require
bakin
g, befo
re m
ounting, i
f:
Bag s
eal date
Mois
ture
Level 1
Mois
ture
Level 2
Mois
ture
Level 2
a4. If b
aking is
require
d,
b) 2a o
r 2b is
not m
et.
Date
and ti
me o
pened:
refe
rence IP
C/J
ED
EC
J-S
TD
-033 fo
r bake p
rocedure
.
Flo
or tim
e see b
elow
If bla
nk, see b
ar code la
bel
Flo
or tim
e > 1
Year
Flo
or tim
e 1
Year
Flo
or tim
e 4
Weeks10%
RH
.
_<
Mois
ture
Level 4
Mois
ture
Level 5
˚C).
OPTO
SEM
ICO
NDUCTORS
MO
ISTURE S
ENSITIV
E
This b
ag conta
ins
CAUTION
Flo
or tim
e 72 H
ours
Flo
or tim
e 48 H
ours
Flo
or tim
e 24 H
ours
30 ˚C
/60%
RH
.
_<
LE
VE
L
If bla
nk, see
bar code la
bel
Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card according JEDEC-STD-033.
LB P4SG
17 Version 1.5 | 2020-06-04
Type Designation System
L A P 4 7 B
Chip Technology 3: standard InGaN 6: standard InGaAlP B: HOP 2000 F: Thinfilm InGaAlP G: ThinGaN (Thinfilm InGaN) (Subcon: Sapphire) K: InGaAlP low current
Encapsulant Type / Lens Properties 7: colorless clear or white volume conversion
(resin encapsulation) S: Silicone (with or without diffuser)
Wavelength Emission Color Color coordinates according (λdom typ.) CIE 1931/Emission color: T: 528 nm true green W: white Y: 587 nm yellow CB: color on demand blue A: 617 nm amber B: 470 nm blue R: 625 nm red O: 606 nm orange P: 560 nm pure green S: 633 nm super red G: 570 nm green L: Light emitting diode
Package Type P: POINTLED
Lead / Package Properties 4: through hole W: folded leads and UX:3, Ag-LF, w/o
TO2 jetting
LB P4SG
18 Version 1.5 | 2020-06-04
NotesThe evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of lamps and lamp systems). Within the risk grouping system of this IEC standard, the device specified in this data sheet falls into the class exempt group (exposure time 10000 s). Under real circumstances (for expo-sure time, conditions of the eye pupils, observation distance), it is assumed that no endangerment to the eye exists from these devices. As a matter of principle, however, it should be mentioned that intense light sources have a high secondary exposure potential due to their blinding effect. When looking at bright light sources (e.g. headlights), temporary reduction in visual acuity and afterimages can occur, leading to irrita-tion, annoyance, visual impairment, and even accidents, depending on the situation.
Subcomponents of this device contain, in addition to other substances, metal filled materials including silver. Metal filled materials can be affected by environments that contain traces of aggressive substances. There-fore, we recommend that customers minimize device exposure to aggressive substances during storage, production, and use. Devices that showed visible discoloration when tested using the described tests above did show no performance deviations within failure limits during the stated test duration. Respective failure limits are described in the IEC60810.
For further application related information please visit www.osram-os.com/appnotes
LB P4SG
19 Version 1.5 | 2020-06-04
Disclaimer
Attention please!The information describes the type of component and shall not be considered as assured characteristics.Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances.For information on the types in question please contact our Sales Organization.If printed or downloaded, please find the latest version on the OSRAM OS website.
PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.
Product and functional safety devices/applications or medical devices/applicationsOSRAM OS components are not developed, constructed or tested for the application as safety relevant component or for the application in medical devices.OSRAM OS products are not qualified at module and system level for such application.
In case buyer – or customer supplied by buyer – considers using OSRAM OS components in product safety devices/applications or medical devices/applications, buyer and/or customer has to inform the local sales partner of OSRAM OS immediately and OSRAM OS and buyer and /or customer will analyze and coordi-nate the customer-specific request between OSRAM OS and buyer and/or customer.
LB P4SG
20 Version 1.5 | 2020-06-04
Glossary1) Brightness: Brightness values are measured during a current pulse of typically 25 ms, with an internal
reproducibility of ±8 % and an expanded uncertainty of ±11 % (acc. to GUM with a coverage factor of k = 3).
2) Reverse Operation: This product is intended to be operated applying a forward current within the specified range. Applying any continuous reverse bias or forward bias below the voltage range of light emission shall be avoided because it may cause migration which can change the electro-optical char-acteristics or damage the LED.
3) Wavelength: The wavelength is measured at a current pulse of typically 25 ms, with an internal repro-ducibility of ±0.5 nm and an expanded uncertainty of ±1 nm (acc. to GUM with a coverage factor of k = 3).
4) Forward Voltage: The forward voltage is measured during a current pulse of typically 8 ms, with an internal reproducibility of ±0.05 V and an expanded uncertainty of ±0.1 V (acc. to GUM with a coverage factor of k = 3).
5) Thermal Resistance: Rth max is based on statistic values (6σ).6) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devic-
es, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could dif-fer from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice.
7) Characteristic curve: In the range where the line of the graph is broken, you must expect higher differ-ences between single devices within one packing unit.
8) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and dimensions are specified in mm.
9) Tape and Reel: All dimensions and tolerances are specified acc. IEC 60286-3 and specified in mm.
LB P4SG
21 Version 1.5 | 2020-06-04
Revision HistoryVersion Date Change
1.5 2020-05-27 Maximum Ratings Characteristics Glossary
LB P4SG
22 Version 1.5 | 2020-06-04
Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved.