Appendix

Component Data Sheets

LM741Operational AmplifierGeneral DescriptionThe LM741 series are general purpose operational amplifi-ers which feature improved performance over industry stan-dards like the LM709. They are direct, plug-in replacementsfor the 709C, LM201, MC1439 and 748 in most applications.

The amplifiers offer many features which make their applica-tion nearly foolproof: overload protection on the input andoutput, no latch-up when the common mode range is ex-ceeded, as well as freedom from oscillations.

The LM741C is identical to the LM741/LM741A except thatthe LM741C has their performance guaranteed over a 0˚C to+70˚C temperature range, instead of −55˚C to +125˚C.

Connection Diagrams

Typical Application

Metal Can Package

DS009341-2

Note 1: LM741H is available per JM38510/10101

Order Number LM741H, LM741H/883 (Note 1),LM741AH/883 or LM741CH

See NS Package Number H08C

Dual-In-Line or S.O. Package

DS009341-3

Order Number LM741J, LM741J/883, LM741CNSee NS Package Number J08A, M08A or N08E

Ceramic Flatpak

DS009341-6

Order Number LM741W/883See NS Package Number W10A

Offset Nulling Circuit

DS009341-7

August 2000LM

741O

perationalAm

plifier

© 2000 National Semiconductor Corporation DS009341 www.national.com

Absolute Maximum Ratings (Note 2)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.

(Note 7)

LM741A LM741 LM741CSupply Voltage ±22V ±22V ±18VPower Dissipation (Note 3) 500 mW 500 mW 500 mWDifferential Input Voltage ±30V ±30V ±30VInput Voltage (Note 4) ±15V ±15V ±15VOutput Short Circuit Duration Continuous Continuous ContinuousOperating Temperature Range −55˚C to +125˚C −55˚C to +125˚C 0˚C to +70˚CStorage Temperature Range −65˚C to +150˚C −65˚C to +150˚C −65˚C to +150˚CJunction Temperature 150˚C 150˚C 100˚CSoldering Information

N-Package (10 seconds) 260˚C 260˚C 260˚CJ- or H-Package (10 seconds) 300˚C 300˚C 300˚CM-Package

Vapor Phase (60 seconds) 215˚C 215˚C 215˚CInfrared (15 seconds) 215˚C 215˚C 215˚C

See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of solderingsurface mount devices.ESD Tolerance (Note 8) 400V 400V 400V

Electrical Characteristics (Note 5)

Parameter Conditions LM741A LM741 LM741C Units

Min Typ Max Min Typ Max Min Typ Max

Input Offset Voltage TA = 25˚C

RS ≤ 10 kΩ 1.0 5.0 2.0 6.0 mV

RS ≤ 50Ω 0.8 3.0 mV

TAMIN ≤ TA ≤ TAMAX

RS ≤ 50Ω 4.0 mV

RS ≤ 10 kΩ 6.0 7.5 mV

Average Input Offset 15 µV/˚C

Voltage Drift

Input Offset Voltage TA = 25˚C, VS = ±20V ±10 ±15 ±15 mV

Adjustment Range

Input Offset Current TA = 25˚C 3.0 30 20 200 20 200 nA

TAMIN ≤ TA ≤ TAMAX 70 85 500 300 nA

Average Input Offset 0.5 nA/˚C

Current Drift

Input Bias Current TA = 25˚C 30 80 80 500 80 500 nA

TAMIN ≤ TA ≤ TAMAX 0.210 1.5 0.8 µA

Input Resistance TA = 25˚C, VS = ±20V 1.0 6.0 0.3 2.0 0.3 2.0 MΩTAMIN ≤ TA ≤ TAMAX, 0.5 MΩVS = ±20V

Input Voltage Range TA = 25˚C ±12 ±13 V

TAMIN ≤ TA ≤ TAMAX ±12 ±13 V

LM74

1

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Electrical Characteristics (Note 5) (Continued)

Parameter Conditions LM741A LM741 LM741C Units

Min Typ Max Min Typ Max Min Typ Max

Large Signal Voltage Gain TA = 25˚C, RL ≥ 2 kΩVS = ±20V, VO = ±15V 50 V/mV

VS = ±15V, VO = ±10V 50 200 20 200 V/mV

TAMIN ≤ TA ≤ TAMAX,

RL ≥ 2 kΩ,

VS = ±20V, VO = ±15V 32 V/mV

VS = ±15V, VO = ±10V 25 15 V/mV

VS = ±5V, VO = ±2V 10 V/mV

Output Voltage Swing VS = ±20V

RL ≥ 10 kΩ ±16 V

RL ≥ 2 kΩ ±15 V

VS = ±15V

RL ≥ 10 kΩ ±12 ±14 ±12 ±14 V

RL ≥ 2 kΩ ±10 ±13 ±10 ±13 V

Output Short Circuit TA = 25˚C 10 25 35 25 25 mA

Current TAMIN ≤ TA ≤ TAMAX 10 40 mA

Common-Mode TAMIN ≤ TA ≤ TAMAX

Rejection Ratio RS ≤ 10 kΩ, VCM = ±12V 70 90 70 90 dB

RS ≤ 50Ω, VCM = ±12V 80 95 dB

Supply Voltage Rejection TAMIN ≤ TA ≤ TAMAX,

Ratio VS = ±20V to VS = ±5V

RS ≤ 50Ω 86 96 dB

RS ≤ 10 kΩ 77 96 77 96 dB

Transient Response TA = 25˚C, Unity Gain

Rise Time 0.25 0.8 0.3 0.3 µs

Overshoot 6.0 20 5 5 %

Bandwidth (Note 6) TA = 25˚C 0.437 1.5 MHz

Slew Rate TA = 25˚C, Unity Gain 0.3 0.7 0.5 0.5 V/µs

Supply Current TA = 25˚C 1.7 2.8 1.7 2.8 mA

Power Consumption TA = 25˚C

VS = ±20V 80 150 mW

VS = ±15V 50 85 50 85 mW

LM741A VS = ±20V

TA = TAMIN 165 mW

TA = TAMAX 135 mW

LM741 VS = ±15V

TA = TAMIN 60 100 mW

TA = TAMAX 45 75 mW

Note 2: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device isfunctional, but do not guarantee specific performance limits.

LM741

www.national.com3

Electrical Characteristics (Note 5) (Continued)

Note 3: For operation at elevated temperatures, these devices must be derated based on thermal resistance, and Tj max. (listed under “Absolute Maximum Rat-ings”). Tj = TA + (θjA PD).

Thermal Resistance Cerdip (J) DIP (N) HO8 (H) SO-8 (M)

θjA (Junction to Ambient) 100˚C/W 100˚C/W 170˚C/W 195˚C/W

θjC (Junction to Case) N/A N/A 25˚C/W N/A

Note 4: For supply voltages less than ±15V, the absolute maximum input voltage is equal to the supply voltage.

Note 5: Unless otherwise specified, these specifications apply for VS = ±15V, −55˚C ≤ TA ≤ +125˚C (LM741/LM741A). For the LM741C/LM741E, these specifica-tions are limited to 0˚C ≤ TA ≤ +70˚C.

Note 6: Calculated value from: BW (MHz) = 0.35/Rise Time(µs).

Note 7: For military specifications see RETS741X for LM741 and RETS741AX for LM741A.

Note 8: Human body model, 1.5 kΩ in series with 100 pF.

Schematic Diagram

DS009341-1

LM74

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Physical Dimensions inches (millimeters) unless otherwise noted

Metal Can Package (H)Order Number LM741H, LM741H/883, LM741AH/883, LM741AH-MIL or LM741CH

NS Package Number H08C

Ceramic Dual-In-Line Package (J)Order Number LM741J/883NS Package Number J08A

LM741

www.national.com5

Physical Dimensions inches (millimeters) unless otherwise noted (Continued)

Dual-In-Line Package (N)Order Number LM741CN

NS Package Number N08E

10-Lead Ceramic Flatpak (W)Order Number LM741W/883, LM741WG-MPR or LM741WG/883

NS Package Number W10A

LM74

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Notes

LIFE SUPPORT POLICY

NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERALCOUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implantinto the body, or (b) support or sustain life, andwhose failure to perform when properly used inaccordance with instructions for use provided in thelabeling, can be reasonably expected to result in asignificant injury to the user.

2. A critical component is any component of a lifesupport device or system whose failure to performcan be reasonably expected to cause the failure ofthe life support device or system, or to affect itssafety or effectiveness.

National SemiconductorCorporationAmericasTel: 1-800-272-9959Fax: 1-800-737-7018Email: support@nsc.com

National SemiconductorEurope

Fax: +49 (0) 180-530 85 86Email: europe.support@nsc.com

Deutsch Tel: +49 (0) 69 9508 6208English Tel: +44 (0) 870 24 0 2171Français Tel: +33 (0) 1 41 91 8790

National SemiconductorAsia Pacific CustomerResponse GroupTel: 65-2544466Fax: 65-2504466Email: ap.support@nsc.com

National SemiconductorJapan Ltd.Tel: 81-3-5639-7560Fax: 81-3-5639-7507

www.national.com

LM741

OperationalA

mplifier

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.

1N/FD

LL 914/A/B

/ 916/A/B

/ 4148 / 4448

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448

Small Signal DiodeAbsolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:1) These ratings are based on a maximum junction temperature of 200 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

2002 Fairchild Semiconductor Corporation

Symbol

Parameter

Value

Units VRRM Maximum Repetitive Reverse Voltage 100 V IF(AV) Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second Pulse Width = 1.0 microsecond

1.0 4.0

A A

Tstg Storage Temperature Range -65 to +200 °C TJ Operating Junction Temperature 175 °C

Symbol

Characteristic

Max

Units 1N/FDLL 914/A/B / 4148 / 4448 PD Power Dissipation 500 mW RθJA Thermal Resistance, Junction to Ambient 300 °C/W

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448, Rev. B

1N/FD

LL 914/A/B

/ 916/A/B

/ 4148 / 4448

Typical Characteristics

Small Signal Diode(continued)

Symbol

Parameter

Test Conditions

Min

Max

Units

VR Breakdown Voltage IR = 100 µA IR = 5.0 µA

100 75

V V

VF Forward Voltage 1N914B/4448 1N916B

1N914/916/4148 1N914A/916A

1N916B 1N914B/4448

IF = 5.0 mA IF = 5.0 mA IF = 10 mA IF = 20 mA IF = 20 mA IF = 100 mA

620 630

720 730 1.0 1.0 1.0 1.0

mV mV V V V V

IR Reverse Current VR = 20 V VR = 20 V, TA = 150°C VR = 75 V

25 50 5.0

nA µA µA

CT Total Capacitance 1N916A/B/4448 1N914A/B/4148

VR = 0, f = 1.0 MHz VR = 0, f = 1.0 MHz

2.0 4.0

pF pF

trr Reverse Recovery Time IF = 10 mA, VR = 6.0 V (60mA), Irr = 1.0 mA, RL = 100Ω

4.0 ns

Electrical Characteristics TA = 25°C unless otherwise noted

110

120

130

140

150

160Ta=25 oC

1 2 3 5 10 20 30 50 100

Rev

erse

Vol

tage

, V R

[V]

Reverse Current, IR [uA]

Figure 1. Reverse Voltage vs Reverse CurrentBV - 1.0 to 100 uA

0

20

40

60

80

100

120

10 20 30 50 70 100

Ta= 25 oC

Rev

erse

Cur

rent

, I

R [nA

]

Reverse Voltage, VR [V]

Figure 2. Reverse Current vs Reverse VoltageIR - 10 to 100 V

GENERAL RULE: The Reverse Current of a diode will approximatelydouble for every ten (10) Degree C increase in Temperature

250

300

350

400

450

500

550

1 2 3 5 10 20 30 50 100

Ta= 25 oC

Forw

ard

Volta

ge, V

R [m

V]

Forward Current, IF [uA]

Figure 3. Forward Voltage vs Forward CurrentVF - 1 to 100 uA

450

500

550

600

650

700

750

0.1 0.2 0.3 0.5 1 2 3 5 10

Ta= 25 oC

Forw

ard

Volta

ge, V

F [m

V]

Forward Current, IF [mA]Figure 4. Forward Voltage vs Forward Current

VF - 0.1 to 10 mA

1N/FD

LL 914/A/B

/ 916/A/B

/ 4148 / 4448

Typical Characteristics (continued)

Small Signal Diode(continued)

0 50 100 1500

100

200

300

400

500

IF(AV) - AVERAGE RECTIFIED CURRENT - mA

Cur

rent

(mA

)

Ambient Temperature ( oC)

0 2 4 6 8 10 12 140.75

0.80

0.85

0.90

TA = 25 oC

Tota

l Cap

acita

nce

(pF)

REVERSE VOLTAGE (V)

0.6

0.8

1.0

1.2

1.4

1.6

10 20 30 50 100 200 300 500 800

Ta= 25 oC

Forw

ard

Volta

ge, V

F [m

V]

Forward Current, IF [mA]Figure 5. Forward Voltage vs Forward Current

VF - 10 to 800 mA

0.01 0.1 1 10

300

400

500

600

700

800

900

30.30.03

Typical

Ta= -40 oC

Ta= 25 oC

Ta= +65 oC

Forw

ard

Volta

ge, V

F [m

V]

Forward Current, IF [mA]Figure 6. Forward Voltagevs Ambient Temperature

VF - 0.01 - 20 mA (-40 to +65 Deg C)

10 20 30 40 50 601.0

1.5

2.0

2.5

3.0

3.5

4.0

Ta = 25 oC

Rev

erse

Rec

over

y Ti

me,

t

rr [ns]

Reverse Recovery Current, Irr [mA]

Figure 8. Reverse Recovery Time vsReverse Recovery Current

0 50 100 150 2000

100

200

300

400

500

DO-35

SOT-23

Pow

er D

issi

patio

n, P D [

mW

]

Temperature [ oC]Figure 10. Power Derating Curve

Figure 7. Total CapacitanceIF = 10mA - IRR = 1.0 mA - Rloop = 100 Ohms

Figure 9. Average Rectified Current (IF(AV))versus Ambient Temperature (TA)

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November 1995

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor

General Description Features

___________________________________________________________________________________________

Absolute Maximum Ratings TA = 25°C unless otherwise notedSymbol Parameter 2N7000 2N7002 NDS7002A Units

VDSS Drain-Source Voltage 60 V

VDGR Drain-Gate Voltage (RGS < 1 MΩ) 60 V

VGSS Gate-Source Voltage - Continuous ±20 V

- Non Repetitive (tp < 50µs) ±40

ID Maximum Drain Current - Continuous 200 115 280 mA - Pulsed 500 800 1500

PD Maximum Power Dissipation 400 200 300 mW

Derated above 25oC 3.2 1.6 2.4 mW/°CTJ,TSTG Operating and Storage Temperature Range -55 to 150 -65 to 150 °C

TL Maximum Lead Temperature for SolderingPurposes, 1/16" from Case for 10 Seconds

300 °C

THERMAL CHARACTERISTICS

RθJAThermal Resistance, Junction-to-Ambient 312.5 625 417 °C/W

2N7000.SAM Rev. A1

These N-Channel enhancement mode field effect transistorsare produced using Fairchild's proprietary, high cell density,DMOS technology. These products have been designed tominimize on-state resistance while provide rugged, reliable,and fast switching performance. They can be used in mostapplications requiring up to 400mA DC and can deliverpulsed currents up to 2A. These products are particularlysuited for low voltage, low current applications such as smallservo motor control, power MOSFET gate drivers, and otherswitching applications.

High density cell design for low RDS(ON).

Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.

S

D

G

SG

D

TO-92

© 1997 Fairchild Semiconductor Corporation

2N7000 (TO-236AB)

2N7002/NDS7002A

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Conditions Type Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 10 µA All 60 V

IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 2N7000 1 µA

TJ=125°C 1 mAVDS = 60 V, VGS = 0 V 2N7002

NDS7002A1 µA

TJ=125°C 0.5 mAIGSSF Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V 2N7000 10 nA

VGS = 20 V, VDS = 0 V 2N7002NDS7002A

100 nA

IGSSR Gate - Body Leakage, Reverse VGS = -15 V, VDS = 0 V 2N7000 -10 nAVGS = -20 V, VDS = 0 V 2N7002

NDS7002A-100 nA

ON CHARACTERISTICS (Note 1)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 2N7000 0.8 2.1 3 V

VDS = VGS, ID = 250 µA 2N7002NDS7002A

1 2.1 2.5

RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA 2N7000 1.2 5 ΩTJ =125°C 1.9 9

VGS = 4.5 V, ID = 75 mA 1.8 5.3VGS = 10 V, ID = 500 mA 2N7002 1.2 7.5

TJ =100°C 1.7 13.5VGS = 5.0 V, ID = 50 mA 1.7 7.5

TJ =100C 2.4 13.5VGS = 10 V, ID = 500 mA NDS7002A 1.2 2

TJ =125°C 2 3.5VGS = 5.0 V, ID = 50 mA 1.7 3

TJ =125°C 2.8 5VDS(ON) Drain-Source On-Voltage VGS = 10 V, ID = 500 mA 2N7000 0.6 2.5 V

VGS = 4.5 V, ID = 75 mA 0.14 0.4VGS = 10 V, ID = 500mA 2N7002 0.6 3.75VGS = 5.0 V, ID = 50 mA 0.09 1.5VGS = 10 V, ID = 500mA NDS7002A 0.6 1VGS = 5.0 V, ID = 50 mA 0.09 0.15

2N7000.SAM Rev. A1

Electrical Characteristics TA = 25oC unless otherwise noted

Symbol Parameter Conditions Type Min Typ Max UnitsON CHARACTERISTICS Continued (Note 1)

ID(ON) On-State Drain Current VGS = 4.5 V, VDS = 10 V 2N7000 75 600 mAVGS = 10 V, VDS > 2 VDS(on) 2N7002 500 2700VGS = 10 V, VDS > 2 VDS(on) NDS7002A 500 2700

gFS Forward Transconductance VDS = 10 V, ID = 200 mA 2N7000 100 320 mSVDS > 2 VDS(on), ID = 200 mA 2N7002 80 320VDS > 2 VDS(on), ID = 200 mA NDS7002A 80 320

DYNAMIC CHARACTERISTICSCiss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHzAll 20 50 pF

Coss Output Capacitance All 11 25 pFCrss Reverse Transfer Capacitance All 4 5 pFton Turn-On Time VDD = 15 V, RL = 25 Ω,

ID = 500 mA, VGS = 10 V, RGEN = 25

2N7000 10 ns

VDD = 30 V, RL = 150 Ω,ID = 200 mA, VGS = 10 V,RGEN = 25 Ω

2N700NDS7002A

20

toff Turn-Off Time VDD = 15 V, RL = 25 Ω, ID = 500 mA, VGS = 10 V, RGEN = 25

2N7000 10 ns

VDD = 30 V, RL = 150 Ω,ID = 200 mA, VGS = 10 V,RGEN = 25 Ω

2N700NDS7002A

20

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGSIS Maximum Continuous Drain-Source Diode Forward Current 2N7002 115 mA

NDS7002A 280ISM Maximum Pulsed Drain-Source Diode Forward Current 2N7002 0.8 A

NDS7002A 1.5VSD Drain-Source Diode Forward

VoltageVGS = 0 V, IS = 115 mA (Note 1) 2N7002 0.88 1.5 VVGS = 0 V, IS = 400 mA (Note 1) NDS7002A 0.88 1.2

Note:1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

2N7000.SAM Rev. A1

2N7000.SAM Rev. A1

0 1 2 3 4 50

0.5

1

1.5

2

V , DRAIN-SOURCE VOLTAGE (V)

I ,

DR

AIN

-SO

UR

CE

CU

RR

ENT

(A)

9.0

4.0

8.0

3.0

7.0

V = 10VGS

DS

D

5.0

6.0

-50 -25 0 25 50 75 100 125 1500.5

0.75

1

1.25

1.5

1.75

2

T , JUNCTION TEMPERATURE (°C)

DR

AIN

-SO

UR

CE

ON

-RES

ISTA

NC

E

J

R

, N

OR

MAL

IZED

DS(

ON

)

V = 10VGSI = 500m AD

-50 -25 0 25 50 75 100 125 1500.8

0.85

0.9

0.95

1

1.05

1.1

T , JUNCTION TEM PERATURE (°C)

GAT

E-SO

UR

CE

THR

ESH

OLD

VO

LTAG

E

J

I = 1 m AD

V = VDS GS

V ,

NO

RM

ALIZ

EDth

0 0.4 0.8 1.2 1.6 20.5

1

1.5

2

2.5

3

I , DRA IN CURRENT (A)

DR

AIN

-SO

UR

CE

ON

-RES

ISTA

NC

E

V =4.0V GS

D

R

, N

OR

MAL

IZED

DS(

on)

7.0

4.5

10

5.0

6.0

9.08.0

0 0.4 0.8 1.2 1.6 20

0.5

1

1.5

2

2.5

3

I , DRAIN CURRENT (A)

DR

AIN

-SO

UR

CE

ON

-RES

ISTA

NC

E

T = 125°CJ

25°C

-55°C

D

V = 10V GS

R

, N

OR

MAL

IZED

DS(

on)

Typical Electrical Characteristics

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with GateVoltage and Drain Current

Figure 3. On-Resistance Variationwith Temperature

Figure 4. On-Resistance Variation with DrainCurrent and Temperature

Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation withTemperature

0 2 4 6 8 100

0.4

0.8

1.2

1.6

2

V , GATE TO SOURCE VOLTAGE (V)

I ,

DR

AIN

CU

RR

ENT

(A)

V = 10VDS

GS

D

T = -55°CJ 25°C125°C

2N7000 / 2N7002 / NDS7002A

2N7000.SAM Rev. A1

-50 -25 0 25 50 75 100 125 1500.925

0.95

0.975

1

1.025

1.05

1.075

1.1

T , JUNCTION TEM PERATURE (°C)

DR

AIN

-SO

UR

CE

BREA

KDO

WN

VO

LTAG

E

J

BV

,

NO

RM

ALIZ

EDD

SS

I = 250µAD

0.2 0.4 0.6 0.8 1 1.2 1.40.001

0.005

0.01

0.05

0.1

0.5

1

2

V , BODY DIODE FORWARD VOLTAGE (V)

I ,

REV

ERSE

DR

AIN

CU

RR

ENT

(A)

V = 0VGS

T = 125°CJ

SD

S

25°C

-55°C

0 0.4 0.8 1.2 1.6 20

2

4

6

8

10

Q , GATE CHARGE (nC)

V

, G

ATE-

SOU

RC

E VO

LTAG

E (V

)

g

GS

I =500m AD

V = 25VDS

115m A

280m A

1 2 3 5 10 20 30 501

2

5

10

20

40

60

V , DRAIN TO SOURCE VOLTAGE (V)

CAP

ACIT

ANC

E (p

F)

DS

C iss

f = 1 MHzV = 0VGS

C oss

C rss

G

D

S

VDD

R LV

V

IN

OUT

VGSDUTRGEN

10%

50%

90%

10%

90%

90%

50%Input, Vin

Output, Vout

t on toff

td(off) t ftrt d(on)

Inverted10%

Pulse Width

Figure 7. Breakdown Voltage Variationwith Temperature

Figure 8. Body Diode Forward Voltage Variation with

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

Figure 11. Figure 12. Switching Waveforms

Typical Electrical Characteristics (continued)2N7000 / 2N7002 /NDS7002A

2N7000.SAM Rev. A1

0.0001 0.001 0.01 0.1 1 10 100 3000.001

0.002

0.01

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TR

AN

SIE

NT

TH

ER

MA

L R

ES

ISTA

NC

Er(

t), N

OR

MA

LIZ

ED

EF

FE

CT

IVE

1

Single Pulse

D = 0.5

0.1

0 .05

0 .02

0 .01

0 .2

Duty Cycle, D = t /t1 2

R (t) = r(t) * R R = (See Datasheet)

θJAθJAθJA

T - T = P * R (t)θJAAJ

P(pk)

t 1 t 2

0.0001 0.001 0.01 0.1 1 10 100 3000.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TR

AN

SIE

NT

TH

ER

MA

L R

ES

ISTA

NC

Er(

t), N

OR

MA

LIZ

ED

EF

FE

CT

IVE

1

Single Pulse

D = 0.5

0.1

0.05

0 .02

0.01

0 .2

Duty Cycle, D = t /t1 2

R (t) = r(t) * R R = (See Datasheet)

θJAθJAθJA

T - T = P * R (t)θJAAJ

P(pk)

t 1 t 2

1 2 5 10 20 30 60 800.005

0.01

0.05

0.1

0.5

1

23

V , DRAIN-SOURCE VOLTAGE (V)

I ,

DR

AIN

CU

RR

ENT

(A)

DS

D

V = 10VSINGLE PULSE

T = 25°C

GS

A

RDS(ON) Lim it

100m s

1ms10m s

DC

1s

100us

10s

Figure 16. TO-92, 2N7000 Transient Thermal Response Curve

Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve

1 2 5 10 20 30 60 800.005

0.01

0.05

0.1

0.5

1

23

V , DRAIN-SOURCE VOLTAGE (V)

I ,

DR

AIN

CU

RR

ENT

(A)

DS

D

V = 10VSINGLE PULSE

T = 25°C

GS

A

RDS(ON) Lim it

100m s

1ms

10m s

DC

1s10s

100us

1 2 5 10 20 30 60 800.005

0.01

0.05

0.1

0.5

1

23

V , DRAIN-SOURCE VOLTAGE (V)

I ,

DR

AIN

CU

RR

ENT

(A)

DS

D V = 10VSINGLE PULSE

T = 25°C

GS

A

RDS(ON) Lim it

100m s

1ms

10m s

DC

1s10s

100us

Figure 13. 2N7000 MaximumSafe Operating Area

Figure 14. 2N7002 MaximumSafe Operating Area

Figure 15. NDS7000A MaximumSafe Operating Area

Typical Electrical Characteristics (continued)

TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.

2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Formative orIn Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.

PowerTrenchQFET™QS™QT Optoelectronics™Quiet Series™SILENT SWITCHERSMART START™SuperSOT™-3SuperSOT™-6SuperSOT™-8

FASTr™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN™POP™

Rev. G

ACEx™Bottomless™CoolFET™CROSSVOLT™DOME™E2CMOSTM

EnSignaTM

FACT™FACT Quiet Series™FAST

SyncFET™TinyLogic™UHC™VCX™

2N2219A2N2222A

HIGH SPEED SWITCHESPRELIMINARY DATA

DESCRIPTION The 2N2219A and 2N2222A are silicon PlanarEpitaxial NPN transistors in Jedec TO-39 (for2N2219A) and in Jedec TO-18 (for 2N2222A)metal case. They are designed for high speedswitching application at collector current up to500mA, and feature useful current gain over awide range of collector current, low leakagecurrents and low saturation voltage.

®

INTERNAL SCHEMATIC DIAGRAM

February 2003

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

VCBO Collector-Base Voltage (IE = 0) 75 V

VCEO Collector-Emitter Voltage (IB = 0) 40 V

VEBO Emitter-Base Voltage (IC = 0) 6 V

IC Collector Current 0.6 A

ICM Collector Peak Current (tp < 5 ms) 0.8 A

Ptot Total Dissipation at Tamb ≤ 25 oC for 2N2219A for 2N2222A at TC ≤ 25 oC for 2N2219A for 2N2222A

0.80.5

31.8

WW

WW

Tstg Storage Temperature -65 to 175 oC

Tj Max. Operating Junction Temperature 175 oC

TO-18 TO-39

1/7

THERMAL DATA

TO-39 TO-18

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case MaxThermal Resistance Junction-Ambient Max

50187.5

83.3300

oC/WoC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

ICBO Collector Cut-offCurrent (IE = 0)

VCB = 60 VVCB = 60 V Tj = 150 oC

1010

nAµA

ICEX Collector Cut-offCurrent (VBE = -3V)

VCE = 60 V 10 nA

IBEX Base Cut-off Current(VBE = -3V)

VCE = 60 V 20 nA

IEBO Emitter Cut-off Current(IC = 0)

VEB = 3 V 10 nA

V(BR)CBO Collector-BaseBreakdown Voltage(IE = 0)

IC = 10 µA 75 V

V(BR)CEO∗ Collector-EmitterBreakdown Voltage(IB = 0)

IC = 10 mA 40 V

V(BR)EBO Emitter-BaseBreakdown Voltage(IC = 0)

IE = 10 µA 6 V

VCE(sat)∗ Collector-EmitterSaturation Voltage

IC = 150 mA IB = 15 mAIC = 500 mA IB = 50 mA

0.31

VV

VBE(sat)∗ Base-EmitterSaturation Voltage

IC = 150 mA IB = 15 mAIC = 500 mA IB = 50 mA

0.6 1.22

VV

hFE∗ DC Current Gain IC = 0.1 mA VCE = 10 VIC = 1 mA VCE = 10 VIC = 10 mA VCE = 10 VIC = 150 mA VCE = 10 VIC = 500 mA VCE = 10 VIC = 150 mA VCE = 1 VIC = 10 mA VCE = 10 V Tamb = -55 oC

355075

1004050

35

300

hfe∗ Small Signal CurrentGain

IC = 1 mA VCE = 10 V f = 1KHzIC = 10 mA VCE = 10 V f = 1KHz

5075

300375

fT Transition Frequency IC = 20 mA VCE = 20 V f = 100 MHz

300 MHz

CEBO Emitter-BaseCapacitance

IC = 0 VEB = 0.5 V f = 100KHz 25 pF

CCBO Collector-BaseCapacitance

IE = 0 VCB = 10 V f = 100 KHz 8 pF

Re(hie) Real Part of InputImpedance

IC = 20 mA VCE = 20 V f = 300MHz

60 Ω

* Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %

2N2219A / 2N2222A

2/7

ELECTRICAL CHARACTERISTICS (continued)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

NF Noise Figure IC = 0.1 mA VCE = 10 V f = 1KHz Rg = 1KΩ

4 dB

hie Input Impedance IC = 1 mA VCE = 10 VIC = 10 mA VCE = 10 V

20.25

81.25

kΩkΩ

hre Reverse Voltage Ratio IC = 1 mA VCE = 10 VIC = 10 mA VCE = 10 V

84

10-4

10-4

hoe Output Admittance IC = 1 mA VCE = 10 VIC = 10 mA VCE = 10 V

525

35200

µSµS

td∗∗ Delay Time VCC = 30 V IC = 150 mA IB1 = 15 mA VBB = -0.5 V

10 ns

tr∗∗ Rise Time VCC = 30 V IC = 150 mA IB1 = 15 mA VBB = -0.5 V

25 ns

ts∗∗ Storage Time VCC = 30 V IC = 150 mA IB1 = -IB2 = 15 mA

225 ns

tf∗∗ Fall Time VCC = 30 V IC = 150 mA IB1 = -IB2 = 15 mA

60 ns

rbb’ Cb’c Feedback TimeConstant

IC = 20 mA VCE = 20 V f = 31.8MHz

150 ps

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %∗∗ See test circuit

2N2219A / 2N2222A

3/7

Test Circuit fot td, tr.

PULSE GENERATOR : TO OSCILLOSCOPE tr ≤ 20 ns tr ≤ 5.0 nsPW ≤ 200 ns ZIN < 100 KΩZIN = 50 Ω CIN ≤ 12 pF

Test Circuit fot td, tr.

PULSE GENERATOR : TO OSCILLOSCOPE :PW ≈ 10 µs tr < 5.0 nsZIN = 50 Ω ZIN > 100 KΩTC ≤ 5.0 ns CIN ≤ 12 pF

2N2219A / 2N2222A

4/7

DIM.mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 12.7 0.500

B 0.49 0.019

D 5.3 0.208

E 4.9 0.193

F 5.8 0.228

G 2.54 0.100

H 1.2 0.047

I 1.16 0.045

L 45o 45o

L

G

I

D A

F E

B

H

C

TO-18 MECHANICAL DATA

0016043

2N2219A / 2N2222A

5/7

DIM.mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 12.7 0.500

B 0.49 0.019

D 6.6 0.260

E 8.5 0.334

F 9.4 0.370

G 5.08 0.200

H 1.2 0.047

I 0.9 0.035

L 45o (typ.)

L

G

I

D A

F E

B

H

P008B

TO-39 MECHANICAL DATA

2N2219A / 2N2222A

6/7

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license isgranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication aresubject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is a trademark of STMicroelectronics

© 2003 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.

http://www.st.com

2N2219A / 2N2222A

7/7

DATA SHEET

Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04

1997 May 30

DISCRETE SEMICONDUCTORS

2N2907; 2N2907APNP switching transistors

M3D125

1997 May 30 2

Philips Semiconductors Product specification

PNP switching transistors 2N2907; 2N2907A

FEATURES

• High current (max. 600 mA)

• Low voltage (max. 60 V).

APPLICATIONS

• Switching and linear amplification.

DESCRIPTION

PNP switching transistor in a TO-18 metal package.NPN complements: 2N2222 and 2N2222A.

PINNING

PIN DESCRIPTION

1 emitter

2 base

3 collector, connected to case

Fig.1 Simplified outline (TO-18) and symbol.

handbook, halfpage

MAM2631

3

2

3

12

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter − −60 V

VCEO collector-emitter voltage open base

2N2907 − −40 V

2N2907A − −60 V

IC collector current (DC) − −600 mA

Ptot total power dissipation Tamb ≤ 25 °C − 400 mW

hFE DC current gain IC = −150 mA; VCE = −10 V 100 300

fT transition frequency IC = −50 mA; VCE = −20 V; f = 100 MHz 200 − MHz

toff turn-off time ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA − 300 ns

1997 May 30 3

Philips Semiconductors Product specification

PNP switching transistors 2N2907; 2N2907A

LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter − −60 V

VCEO collector-emitter voltage open base; IC < −100 mA

2N2907 − −40 V

2N2907A − −60 V

VEBO emitter-base voltage open collector − −5 V

IC collector current (DC) − −600 mA

ICM peak collector current − −800 mA

IBM peak base current − −200 mA

Ptot total power dissipation Tamb ≤ 25 °C − 400 mW

Tcase ≤ 25 °C − 1.2 W

Tstg storage temperature −65 +150 °CTj junction temperature − 200 °CTamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air 438 K/W

Rth j-c thermal resistance from junction to case 146 K/W

1997 May 30 4

Philips Semiconductors Product specification

PNP switching transistors 2N2907; 2N2907A

CHARACTERISTICSTamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ICBO collector cut-off current

2N2907 IE = 0; VCB = −50 V − −20 nA

IE = 0; VCB = −50 V; Tamb = 150 °C − −20 µA

ICBO collector cut-off current

2N2907A IE = 0; VCB = −50 V − −10 nA

IE = 0; VCB = −50 V; Tamb = 150 °C − −10 µA

IEBO emitter cut-off current IC = 0; VEB = −5 V − −50 nA

hFE DC current gain VCE = −10 V

2N2907 IC = −0.1 mA 35 −IC = −1 mA 50 −IC = −10 mA 75 −IC = −150 mA; note 1 100 300

IC = −500 mA; note 1 30

hFE DC current gain VCE = −10 V

2N2907A IC = −0.1 mA 75 −IC = −1 mA 100 −IC = −10 mA 100 −IC = −150 mA; note 1 100 300

IC = −500 mA; note 1 50 −VCEsat collector-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1 −400 mV

IC = −500 mA; IB = −50 mA; note 1 −1.6 V

VBEsat base-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1 −1.3 V

IC = −500 mA; IB = −50 mA; note 1 −2.6 V

Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 8 pF

Ce emitter capacitance IC = ic = 0; VEB = −2 V; f = 1 MHz − 30 pF

fT transition frequency IC = −50 mA; VCE = −20 V; f = 100 MHz;note 1

200 − MHz

Switching times (between 10% and 90% levels); see Fig.2

ton turn-on time ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA − 45 ns

td delay time − 15 ns

tr rise time − 35 ns

toff turn-off time − 300 ns

ts storage time − 250 ns

tf fall time − 50 ns

1997 May 30 5

Philips Semiconductors Product specification

PNP switching transistors 2N2907; 2N2907A

Fig.2 Test circuit for switching times.

handbook, full pagewidth

RC

R2

R1

DUT

MGD624

Vo

RB(probe)

450 Ω(probe)

450 Ωoscilloscope oscilloscope

VBB

Vi

VCC

Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.

R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.

VBB = 3.5 V; VCC = −29.5 V.

Oscilloscope input impedance Zi = 50 Ω.

1997 May 30 6

Philips Semiconductors Product specification

PNP switching transistors 2N2907; 2N2907A

PACKAGE OUTLINE

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT18/13 TO-18B11/C7 type 3 97-04-18

a

α

k

D A L

seating plane

b

D1

0 5 10 mm

scale

Metal-can cylindrical single-ended package; 3 leads SOT18/13

w AM M B M

A

1

2

3

j

B

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT w

mm 5.314.74

0.470.41

5.455.30

4.704.55

1.030.94

1.10.9

15.012.7

α

0.40 45°

A a b D D1 j k L

2.54

1997 May 30 7

Philips Semiconductors Product specification

PNP switching transistors 2N2907; 2N2907A

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of theseproducts can reasonably be expected to result in personal injury. Philips customers using or selling these products foruse in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from suchimproper use or sale.

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one ormore of the limiting values may cause permanent damage to the device. These are stress ratings only and operationof the device at these or at any other conditions above those given in the Characteristics sections of the specificationis not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

October 1987

Revised January 1999

CD

4007C D

ual C

om

plem

entary P

air Plu

s Inverter

© 1999 Fairchild Semiconductor Corporation DS005943.prf www.fairchildsemi.com

CD4007CDual Complementary Pair Plus Inverter

General DescriptionThe CD4007C consists of three complementary pairs of N-and P-channel enhancement mode MOS transistors suit-able for series/shunt applications. All inputs are protectedfrom static discharge by diode clamps to VDD and VSS.

For proper operation the voltages at all pins must be con-strained to be between VSS − 0.3V and VDD + 0.3V at alltimes.

Features Wide supply voltage range: 3.0V to 15V

High noise immunity: 0.45 VCC (typ.)

Ordering Code:

Devices also available in Tape and Reel. Specify by appending the suffix letter “X” to the ordering code.

Connection Diagram

Pin Assignments for DIP and SOIC

Note: All P-channel substrates are connected to VDD and all N-channel substrates are connected to VSS.

Top View

Order Number Package Number Package Description

CD4007CM M14A 14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-120, 0.150” Narrow

CD4007CN N14A 14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS–001, 0.300” Wide

www.fairchildsemi.com 2

CD

4007

CAbsolute Maximum Ratings(Note 1)

Note 1: This device should not be connected to circuits with the power onbecause high transient voltages may cause permanent damage.

DC Electrical Characteristics

AC Electrical Characteristics (Note 2)

TA = 25°C and CL = 15 pF and rise and fall times = 20 ns. Typical temperature coefficient for all values of VDD = 0.3%/°C

Note 2: AC Parameters are guaranteed by DC correlated testing.

Voltage at Any Pin VSS −0.3V to VDD +0.3V

Operating Temperature Range −40°C to +85°CStorage Temperature Range −65°C to +150°CPower Dissipation (PD)

Dual-In-Line 700 mW

Small Outline 500 mW

Operating VDD Range VSS +3.0V to VSS +15V

Lead Temperature

(Soldering, 10 seconds) 260°C

Limits

Symbol Parameter Conditions −40°C +25°C +85°C Units

Min Typ Max Min Typ Max Min Typ Max

IL Quiescent Device VDD = 5.0V 0.5 0.005 0.05 15 µA

Current VDD = 10V 1.0 0.005 1.0 30 µA

PD Quiescent Device VDD = 5.0V 2.5 0.025 2.5 75 µW

Dissipation Package VDD = 10V 10 0.05 10 300 µW

VOL Output Voltage VDD = 5.0V 0.05 0 0.01 0.05 V

LOW Level VDD = 10V 0.05 0 0.01 0.05 V

VOH Output Voltage VDD = 5.0V 4.95 4.95 5.0 4.95 V

HIGH Level VDD = 10V 9.95 9.95 10 9.95 V

VNL Noise Immunity VDD = 5.0V, VO = 3.6V 1.5 2.25 1.5 1.4 V

(All inputs) VDD = 10V, VO = 7.2V 3.0 4.5 3.0 2.9 V

VNH Noise Immunity VDD = 5.0V, VO = 0.95V 3.6 3.5 2.25 3.5 V

(All Inputs) VDD = 10V, VO = 2.9V 7.1 7.0 4.5 7.0 V

IDN Output Drive Current VDD = 5.0V, VO = 0.4V, VI = VDD 0.35 0.3 1.0 0.24 mA

N-Channel VDD = 10V, VO = 0.5V, VI = VDD 1.2 1.0 2.5 0.8 mA

IDP Output Drive Current VDD = 5.0V, VO = 2.5V, VI = VSS −1.3 −1.1 −4.0 −0.9 mA

P-Channel VDD = 10V, VO = 9.5V, VI = VSS −0.65 −0.55 −2.5 −0.45 mA

II Input Current 10 pA

Symbol Parameter Conditions Min Typ Max Units

tPLH = tPHL Propagation Delay Time VDD = 5.0V 35 75 ns

VDD = 10V 20 50 ns

tTLH = tTHL Transition Time VDD = 5.0V 50 100 ns

VDD = 10V 30 50 ns

CI Input Capacitance Any Input 5 pF

3 www.fairchildsemi.com

CD

4007C

AC Test Circuits

Switching Time Waveforms

www.fairchildsemi.com 4

CD

4007

CPhysical Dimensions inches (millimeters) unless otherwise noted

14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-120, 0.150” NarrowPackage Number M14A

Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.

CD

4007C D

ual C

om

plem

entary P

air Plu

s Inverter

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILDSEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into thebody, or (b) support or sustain life, and (c) whose failureto perform when properly used in accordance withinstructions for use provided in the labeling, can be rea-sonably expected to result in a significant injury to theuser.

2. A critical component in any component of a life supportdevice or system whose failure to perform can be rea-sonably expected to cause the failure of the life supportdevice or system, or to affect its safety or effectiveness.

www.fairchildsemi.com

Physical Dimensions inches (millimeters) unless otherwise noted (Continued)

14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300” WidePackage Number N14A