Lois: “Save me, Dr. HBT – from those evil HFETs.”

36 Years

36 Years

InAs360

GaSb770

AlSb1550

GaAs1420

InGaAs760

InAlAs1460

InP1350

200

1350 200

500450

250

550

550

200

170

GaAsSb720

170

InSb

220

150

AlAs2170

InGaP1900

780

150

100

Bandgap Heaven

Increasing electron Velocity

2000 Nobel Prize in Physics "for developing semiconductor heterostructures used in high-speed- and opto-electronics,"

2002 IEEE Medal of Honor "for contributions to high-frequency transistors, and hot-electron devices, especially heterostructure devices from heterostructure bipolar transistors to lasers, and their molecular beam epitaxy technology."

Honorary doctorates from the Technical University of Aachen (Germany; 1985), the University of Lund (Sweden; 1998), the University of Colorado (USA; 2001), and the University of Jena (Germany; 2008).

2001, Grand Cross of the Order of Merit of the Federal Republic of Germany, the highest award given by the German government.

He is a member of both the National Academy of Engineering and the National Academy of Sciences.