Low Temperature Curable Positive Tone …...photosensitive polyimide (5) Good resistance to bump or WLP process chemicals (6) Fine patterning resolution (～3um, aspect ratio is about

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Low Temperature CurablePositive Tone Photosensitive Polyimide

“Photoneece”LT series

Toray Industries, Inc.

2

Cure condition（℃×h) 170 X 1 X-section

Filmpropertie

s

Tensile strength 100Mpa

Elongation 30%

Young’s modulus 2.5GPa

Residual stress 13MPa

（THK：5um）

The features of LT series

(1) Low temperature curable ( ～170℃ )・Less damage for weak semiconductor device by its low thermal budget

(2) Extreme low residual stress (13MPa) and low shrinkage during curing (5～10%)

(3) Alkali developable (2.38%TMAH solution can be used)(4) Physical properties of LT series are same as those of conventional

photosensitive polyimide(5) Good resistance to bump or WLP process chemicals(6) Fine patterning resolution (～3um, aspect ratio is about 2)(7) Pattern profile suitable for WLP (re-wiring) process

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< Sample preparation >Pre-baking : 120℃×180sec.Exposure : 200-600mJ/cm2

(i-line stepper)Development : 30sec×2Puddles

by TMAH 2.38％Curing : 170～250℃×1h

Curing condition（℃×h) 170 X 1 200 X 1 250 X 1

Filmpropertie

s

Tensile strength 100MPa 100MPa 102MPa

Elongation 30% 20% 20%

Young’s modulus 2.5GPa 2.6GPa 2.8GPa

Residual stress 13MPa 13MPa 25MPa

The film properties and pattern profile vs curing temperature

3um

5um

3um

5um

3um

5um

170℃×1h 200℃×1h 250℃×1h

（The film thickness after curing ：5μm）

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Low out gas during solder process, no pattern shape change, good chemical resistance

Heat stability （outgas）

Heat stability, chemical resistance

Heat stability（pattern profile）

200℃ cured

200℃cured 300℃ treatment in Air

Flux treatment（300℃×10min）

Heat stability＋Chemical resistanceChemical resistanceNon-electric Au platingChemicals treatments

200℃cured

measured by temperature prograumed desorption MS (TPD-MS)

Curing condition Quantity of outgas(RT- 300℃）

180℃－1h

200℃－1h

250℃－1h

174ppm

89.3ppm

58.6ppm

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Si substratePV (p-SiN) 500nm

ILD-1LT (7um)

ILD-2LT (7um)Cu 4μm

Base layer (7um)

Ti barrier metal

Scribe line

UBM (non electrolytic plating) Ni/Au (3um/0.05um)

Solder bumpSolder: M705-BPS3-T5H (Sn-Ag-Cu) (Senju Metal Industry)

The curing temp. of ILD : 200℃ ( Time is 1 hour)

T/C Test (X-section)

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Die

interposer

PSPI

< Condition for Packaging >1) Flux process○Flux : WS600 (Cookson Electronics)

The peak temp. of reflow : 260℃×10sec.○Cleaner : WS-2104 (Kaken Tech)

70℃×15min○Rinser : ST-05 ((Kaken Tech)

20-23℃×30min2) The peak temp. of solder reflow : 260℃×10sec.3) Underfill : U8437-2 (Namics)

The stage temp. of injection : 70-90℃The temp. of curing : 165℃×60min

< Thermal cycle >-40～125℃（each 15min ）with monitoring the resistance of daisy chain

CuDaisychain

a

b

c

d

e f h

j

ig

m k

l

① ⑭

①→a → b →c → d →e→ ｆ → g → h→ i → j→k→ｌ→m→⑭⇒about 14.0 Ω

Package manufacture and T/C test condition

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Result of T/C test

PSPI LT-6100 LT-6600PW-

series

Curing temp. 200 280 160 170 180 280

T / C

0 0/15 0/15 0/15 0/15 0/15 0/15

50 0/15 0/15 0/15 0/15 0/15 0/15

100 0/15 0/15 0/15 0/15 0/15 0/15

150 0/15 0/15 0/15 0/15 0/15 0/15

200 0/15 0/15 0/15 0/15 0/15 0/15

300 0/15 0/15 0/15 0/15 0/15 0/15

500 0/15 0/15 0/15 0/15 0/15 0/15

650 0/15 0/15 0/15 0/15 0/15 0/15

There is no fail（open） under 650 cycle of T/C test.

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Technical Data

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LT-6100 LT-6300 LT-6500 LT-6600

Low stresstype

Highphotosensiti

vity　typeHigh Tg type

Low stressand slightly

high Tg

100 110 121 112170℃ cure % 30 30 30 30200℃ cure % 20 20 20 20250℃ cure % 20 20 20 20

2.6 2.6 3.4 2.970 61 65 60

170℃ cure MPa 13 13 21 13200℃ cure MPa 13 21 35 20250℃ cure MPa 25 23 39 26200℃ cure ℃ 382 374 393 367250℃ cure ℃ 388 380 412 371200℃ cure ℃ 160 180 232 194250℃ cure ℃ - 201 287 212

3.7 3.4 3.1 3.4>10＾16 >10＾16 >10＾16 >10＾16>10＾16 >10＾16 >10＾16 >10＾16>420 395 >420 >4201.7 1.3 1.1 1.6

Young's modulusCTE

Dielectric constantVolume resistanceSurface resistance

MPa(200℃)Tensile strength

Elogation

GPa(200℃)ppm/℃(200℃)

Residual stress

5% weight loss temp.

Breakdown voltageWater absorption

(200℃)ΩcmΩ/□

Tg (TMA)

kV/mm%(200℃)

LT-series

Film properties

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LT-6100 LT-6300 LT-6500 LT-6600

CoatPrebake

3um mJ/cm2 200 150 200 2005um mJ/cm2 300 250 300 3007um mJ/cm2 600 550 650 6009um mJ/cm2 1200 900 1400 1200

PEBDevelop

Cure

NMP rt/15minPGME rt/15min

EL rt/15minIPA rt/15min

Resiststripper

TOK106 rt/15min

25%NaOH rt/15min2.38%TMAH rt/5min

H2SO4/H2O2 rt/5min1%HF ｒｔ/5min

no changeno changeno changeno change

no changeno changeno changeno change

Not required20-120

170-250/30-120

no change

spin120/2.5

Processperformance

without HMDS℃/min

Chemicalresistance

Solvent

Alkakine

Etchant

Exposure

sec

℃/min

Photo process

LT-series

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2.03.04.05.06.07.08.09.0

10.011.012.0

0 500 1000 1500 2000 2500 3000 3500 4000Rotation speed X (rpm)

The

film

thic

knes

s ( m

m) LT-6100

LT-6300

LT-6500

LT-6600

Spin curve of LT series

< Sample preparation >Substrate : Bare SiPrebake : 120℃×180secSpin coat : Clean Track ACT8 (TEL)

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STEP Time(s) Rotation(rpm) Accel Dispense Arm2

1 1.0 0 10000 0 1 center NW home2 15.0 50 100 1 1 center NW home3 3.0 0 10000 0 1 center NW home4 1.0 400 200 0 1 center NW home5 2.0 1000 500 0 1 home NW home

6 25.0 X 10000 0 1 home NW home

7 5.0 X 10000 0 1 home NW in8 1.0 100 10000 6 1 home NW in9 10.0 1000 10000 5,6 1 home NW in10 2.0 800 10000 6 1 home NW in11 10.0 800 10000 1 home NW home12 1.0 0 10000 1 home NW home

Film thickness is controled in step 6,7.(Main speed; Xrpm)

Edge rince flow rate：10ml/min 1：PI dispenceBack rince flow rate：70ml/min 5：back rince（EBR7030）

6：edge rince（EBR7030）

Arm1

Dispence No.

Coating recipe of LT series

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Spincoat X: 3800rpmPre-baking 120oC× 180sec. (DHP) (Thickness after pre-baking :4.55 um)Exposure 150 mJ/cm2 (ghi-line Aligner) / 200 mJ/cm2 (i-Line stepper)Development 30 sec.×2 Puddle development (Thickness after development :3.23 um)Curing 50℃ + 110oC for 30min+ 200oC for 60min (N2) (Thickness after curing :2.98um)

The patterning process of LT-6100< 3um >

< 5um >

< 7um >

< 9um>




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Pattern profile of LT-6100

<Sample preparation>Substrate ： Bare SiPrebake : 120℃×180sec Exposure : 500mJ/cm2 (i-line stepper)Development : 30sec×2PuddleCure : 50C→110C×30min→ 170 ～250C×1h （3.5C/min）

Cure:170℃ Cure:200℃ Cure:250℃

Pattern size10um

>100um

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< 5um >

< 7um >

< 9um>




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Pattern size10um

>100um

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< 5um >

< 7um >

< 9um>




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Pattern size10um

>100um

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< 5um >

< 7um >

< 9um>




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Pattern size10um

>100um

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< Test condition >

Equipment : Shear tester “series 4000” Load cell : BS250Test speed : 100um/sec.Height of rod from substrate : 5um

< Test condition >

The adhesion strength test between PSPI and Substrate

SubSubPSPI

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Cure Temp＼Substrate Cu SiO SiN Si

200℃ 76.1 68.2 72.5 83.5

210℃ 69.9 60.8 73.2 65.5

230℃ 82.1 77.1 69.9 69.3

250℃ 81.0 60.7 80.9 78.1

LT6100 adhesion strength

(MPa)

LT6100

0102030405060708090

100

Cu SiO SiN Si

Adhesi

on s

tren

gth　

（M

Pa）

200℃

210℃

230℃

250℃

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200℃ 74.4 76.9 92.7 71.3

210℃ 81.2 95.0 83.1 70.5

230℃ 82.3 87.5 82.6 79.5

250℃ 87.3 88.6 94.1 76.1

LT6300

0102030405060708090

100

Cu SiO SiN Si

Adhesi

on

stre

ngt

h　

（M

Pa）

200℃

210℃

230℃

250℃


(MPa)

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200℃ 50.0 71.7 58.7 74.7

210℃ 46.8 82.8 70.0 69.0

230℃ 42.7 83.2 61.8 84.0

250℃ 52.1 74.1 77.0 73.4

(MPa)

LT6500

0102030405060708090

100

Cu SiO SiN Si

Adh

esio

n s

tren

gth　

（M

Pa）

200℃

210℃

230℃

250℃


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200℃ 60.4 73.5 61.4 62.7

210℃ 62.5 68.8 70.5 63.3

230℃ 64.5 75.7 78.8 66.7

250℃ 83.3 79.7 77.2 76.8

(MPa)

LT6600

0102030405060708090

100

Cu SiO SiN Si

Adhesi

on s

trengt

h　

（M

Pa）

200℃

210℃

230℃

250℃


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Documents

Low Temperature Curable Positive Tone …...photosensitive polyimide (5) Good resistance to bump or WLP process chemicals (6) Fine patterning resolution (～3um, aspect ratio is about