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MAGNETOELEKTRONIKA przykłady zastosowań. T. Stobiecki Katedra Elektroniki AGH. 1 wykład 11.X.2004. Magnetoelektronika. Bio-sensor (G. Reiss, et al. Univ. of Bielefeld) Cienka warstwa w bezinwazyjnej chirurgii - PowerPoint PPT Presentation
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MAGNETOELEKTRONIKAprzykłady zastosowań
T. Stobiecki
Katedra Elektroniki AGH
1 wykład 11.X.2004
Magnetoelektronika
• Bio-sensor (G. Reiss, et al. Univ. of Bielefeld)
• Cienka warstwa w bezinwazyjnej chirurgii (K. Ishiyama, et al. Research Institute of Electrical Communication,Tohoku University)
• Nowości - magnetic recording
• Magnetoresistive logic systems
• Nasz udział
Special applications
N
S
Biomolekül
GMR-Schicht
Bindestrang
Increased sensitivity by lock-in technique, uncovered references, layout-Optimization
possible: single molecule detection
Signal prop. Number of Beads
R
H
Vertical magnetic field induces dipol field of bead Detection by GMR / TMRSensor
Special applications : - Bio-Chip
• GMR (Giant MagnetoResistance)• TMR (Tunnel MagnetoResistance) detection of single beads / molecules
Fixed DNA single strand
XMR Sensor
1) Immobilisation of target molecules
Si- SubstrateHaftschicht
Smagnetic bead,
coated with Streptavidin,
binds to a selected molecule
N
3) Hybridisation with beads and detection with XMR sensor
XMR sensor detects stray
field
hybridized DNA
2) Hybridisation of the probe molecules
Biotin
Detection: Magnetoresistive biochip sensor
IEEE Trans. Magn., (2002), ICM’03
Special applications
0°90°
-200 -100 0 100 2000
1
2
3
4
5
6
7
GM
R-A
mp
litu
de
in
%
Feld in Oe
0°90°
CharacteristicDesign
Tunnelelement
Ioben
Iunten
Uoben
Uunten
-50 -40 -30 -20 -10 0 10 20 30 40 500
2
4
6
8
10
12
14
16
18
20
22
TM
R-A
mp
litu
de
in %
Feld in Oe
GMR
TMR
Special applications
77 µV 102 µV 267 µV 284 µV 557 µVSignal
Sensor coverage
1) 5 % 2) 6 % 3) 20 % 4) 23 % 5) 40 %
Ref 1 - Sensor 3
Ref 1 - Ref 2
-150 -100 -50 0 50 100 150
0
50
100
150
200
250
Diff
eren
z-B
rück
ensi
gnal
in µ
V
senkrechtes Feld in Oe0 5 10 15 20 25 30 35 40 45
0
100
200
300
400
500
600
Null -Signal
Diff
eren
z-B
rück
ensi
gnal
in µ
V
Bead-Bedeckung in %
DC-measurements with Bangs 0.8 µm-beads
mit beads
ohne beads
Special applications
DC-measurements with Bangs 0.8 µm-beads
-100 -80 -60 -40 -20 0 20 40 60 80 100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
TM
R-A
mpl
itu
de
in %
senkrechtes Feld in Oe
J. Schotter, P.B. Kamp, A. Becker, A. Pühler, D. Brinkmann, W. Schepper, H. Brückl, G. Reiss:A Biochip based on Magnetoresistive Sensors, IEEE Trans. Magnet., 2002
TMR = TMR = TTunneling unneling MMagnetoagnetoRResistanceesistance
5 nmhard magnetic layer
sense layer
MnIr
CoFe
Al2O3
NiFe
DC-measurement, Bangs 0.8 µm Beadsparallel Bias-Field of -6.4 Oe
-100 -80 -60 -40 -20 0 20 40 60 80 100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
TM
R A
mp
litu
de (
%)
perpendicular field (Oe)
~5 % coverage
50 µm
TMR Biochip Sensor:TMR Biochip Sensor:
2x2 µm2 elements
T=300K
T=10K
( ) I IIIj E N E N E T E
Detection: TMR sensor
Advantages of MAGNETIC micro-machine
• Wireless operation
• Simple structure
• Ways to supply energy– F = M (dH/dx)
→ T = M H sin – Magnetostriction
– V = d/dtK.I.Arai, W.Sugawara, K.Ishiyama, T.Honda, M.Yamaguchi, “Fabrication of Small Flying Machines Using Magnetic Thin Films,” IEEE Trans. Mag., vol.31, No.6, pp.3758-3760 (1995).
Flying machine
0 Oe 150 Oe 300 Oe
Bending by DC magnetic field
Rotation by rotating magnetic field
Two principles to move
Lower invasive surgery
What is the challenge to obtain the medical robots? →Wireless energy supply
Spiral-type Magnetic Micro-Machine
Rotational magnetic field
Thrust (swimming direction)
Magnetization
Controlling the swimming direction
STARTSTART
GOALGOAL
STARTSTART
GOALGOAL
Field rotation plane
3D coil-system and controller
Very small machine: 0.3mm
Synchronized swimming of small machine (0.3mm)
Miniaturization of the machine
Tungsten wire : 20mMachine diameter : 0.15mmNdFeB : sputtered
Burrowing Machine Driven by Magnetic Torque
M a g n e t i z a t i o n d i r e c t i o n
7 . 5 m m4 . 0 m m
2 . 0 m m
N d F e B m a g n e t
T i p
Rotational Magnetic Field: 150 Oe, 5 Hz
The machine can burrow into organismal tissue.
Machine
HDD Areal Density Perspective
HDD Areal Density Perspective
Antyferromagnetically coupled AFC media
Heat Assisted Magnetic Recording (HAMR)
Co/Pt multilayers by laser heat treatmnet anisotropy enhancement lower coercivity.
jx
jy
logic input : magnetic field, logic output : voltage / current
clock line
word line
Vout
Special applications: Magnetoresistive logic
„Traditional applications“: Sensors (Car, Automatization) Magnetic Random Access Memory Special : - Magnetoresistive logic: The fundamental logic gate:
Advantage: Field programmable, Logic function can be changed- Reconfigurable computing
Spin logic setup (7 mask e-beam process)
20µm 1mm
Special applications: Magnetoresistive logic
Switching by current lines
0 100 200 300 400 500 600
120
140
160
180
I[a.
u.]
; R
[MO
hm
]
Time [a.u.]
2 ellipses, 0.28µm2, serially connected Hoffset = -60 Oe
TMR: 20% @ 100mV
(1/2 of single ellipse)
Special applications: Magnetoresistive logic
Special applications: Magnetoresistive logic
Masse
Io
Io
Vout
j1j2j3j4
TE4 TE3 TE2 TE1
Steuerleitungen
Lese-leitungen
0 1 2 3 4 5 6 7 8
-12
-8
-4
0
4
8
12
16
20
1 1 1 0 1 0 0 0
SDT 3 SDT4 SDT3 SDT4
"0"
"1"
logic input at (SDT1;SDT2)
-12,9 mV
-5,4 mV-4,6 mV
2,9 mV
-6,6 mV
0,9 mV1,7 mV
9,2 mV
programmed "NOR"programmed "NAND"
(0;0) (0;1) (1;0) (1;1) (0;0) (0;1) (1;0) (1;1)
Vo
ut (
mV
)
-2x 1010
-1x 1010
0
1x 1010
2x 1010
R. Richter, L. Bär, J. Wecker, G. Reiss: Nonvolatile programmable spin-logic for reconfigurable computing, Appl. Phys. Lett., 80 (2002) 1291
Junction TMR Resistance[Ohm]
Hpin ± HC
[Oe]1 47.1 % 308 46.2 ± 2.32 47.1 % 308 46.0 ± 2.33 46.9 % 310 46.1 ± 2.54 47.0 % 310 46.3 ± 2.55 46.8 % 312 46.4 ± 2.5
Special applications: Magnetoresistive logic
Programmed AND : Clocked operation
Nasz udział
http://layer.uci.agh.edu.pl/maglay/podstrony/konfer/