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Scaling, Power and the Future of CMOS Mark Horowitz, Stanford Slide 2 The 80’s Power Problem Until mid 80s technology was mixed nMOS, bipolar, some CMOS Supply voltage was not scaling / power was rising nMOS, bipolar gates dissipate static power From Roger Schmidt, IBM Corp

Mark Horowitz, Stanfordocin06/talks/horowitz.pdf · Scaling, Power and the Future of CMOS Mark Horowitz, Stanford Slide 2 ... Stat.Carr.Chain Stat.Carr.Sel Stat. KS Dom. BK Dom. KS

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Page 1: Mark Horowitz, Stanfordocin06/talks/horowitz.pdf · Scaling, Power and the Future of CMOS Mark Horowitz, Stanford Slide 2 ... Stat.Carr.Chain Stat.Carr.Sel Stat. KS Dom. BK Dom. KS

Scaling, Powerand the Future of CMOS

Mark Horowitz, Stanford

Slide 2

The 80’s Power Problem

• Until mid 80s technology was mixed• nMOS, bipolar, some CMOS

• Supply voltage was not scaling / power was rising• nMOS, bipolar gates dissipate static power

From Roger Schmidt, IBM Corp

Page 2: Mark Horowitz, Stanfordocin06/talks/horowitz.pdf · Scaling, Power and the Future of CMOS Mark Horowitz, Stanford Slide 2 ... Stat.Carr.Chain Stat.Carr.Sel Stat. KS Dom. BK Dom. KS

Slide 3

Solution: Move to CMOS

• And then scale Vdd

0.1

1

10

Jan-85 Jan-88 Jan-91 Jan-94 Jan-97 Jan-00 Jan-03

Feat Size (um)

Vdd

Slide 4

Bad News

• Voltage scaling has

stopped as well

• kT/q does not scale

• Vth scaling has

power consequences

• If Vdd does not scale

• Energy scales slowlyEd Nowak, IBM

Page 3: Mark Horowitz, Stanfordocin06/talks/horowitz.pdf · Scaling, Power and the Future of CMOS Mark Horowitz, Stanford Slide 2 ... Stat.Carr.Chain Stat.Carr.Sel Stat. KS Dom. BK Dom. KS

Slide 5

Energy – Performance Space

• Every design is a point on a 2-D plane

Performance

En

erg

y

Slide 6

Energy – Performance Space

• Every design is a point on a 2-D plane

Performance

En

erg

y

Page 4: Mark Horowitz, Stanfordocin06/talks/horowitz.pdf · Scaling, Power and the Future of CMOS Mark Horowitz, Stanford Slide 2 ... Stat.Carr.Chain Stat.Carr.Sel Stat. KS Dom. BK Dom. KS

Slide 7

Energy – Performance Space

• Every design is a point on a 2-D plane

Performance

En

erg

y

Slide 8

Trade-offs for an Adder

101

102

103

104

105

Stat.Carr.Chain Stat.Carr.Sel

Stat. KS

Dom. BK

Dom. KS

Dom. LF

Stat. LF

Stat. BK

Stat. 84421

Page 5: Mark Horowitz, Stanfordocin06/talks/horowitz.pdf · Scaling, Power and the Future of CMOS Mark Horowitz, Stanford Slide 2 ... Stat.Carr.Chain Stat.Carr.Sel Stat. KS Dom. BK Dom. KS

Slide 9

( )*dd dd

dddd

dd V V

EV

Sens VD

V=

∂∂

= −∂

Key Observation:

• Define the Energy/Delay sensitivity of parameter • For example Vdd:

• At optimal point, all sensitivities should be the same• Must equal the slope of the Pareto optimal curve

Slide 10

What This Means

• Vdd and Vth are not directly set by scaling• Instead set by slope of Pareto optimal curve

• Leakage rose to lower total system power!

101

102

103

104

105

[Vdd

=0.68, VtN

=0.31][V

dd=1 Vt

N=0.30]

[Vdd

=1.2 VtN

=0.26]

[Vdd

=1.3 VtN

=0.22]

Page 6: Mark Horowitz, Stanfordocin06/talks/horowitz.pdf · Scaling, Power and the Future of CMOS Mark Horowitz, Stanford Slide 2 ... Stat.Carr.Chain Stat.Carr.Sel Stat. KS Dom. BK Dom. KS

Slide 11

Leakage Energy• Matching marginal costs for Vdd and Vth

10-2

10-1

0

0.1

0.2

0.3

0.4

0.5

Activity Factor

Lea

kag

e R

ati

o

10-2

10-1

0

0.2

0.4

0.6

0.8

1

1.2

Vo

ltag

eV

dd

Vth

Leakage Ratio

Slide 12

Low Power Design Techniques

Three main classes of methods to reduce energy:

• Cheating• Reducing the performance of the design

• Reducing waste• Stop using energy for stuff that does not produce results

• Stop waiting for stuff that you don’t need (parallelism)

• Problem reformulation• Reduce work (less energy and less delay)

Page 7: Mark Horowitz, Stanfordocin06/talks/horowitz.pdf · Scaling, Power and the Future of CMOS Mark Horowitz, Stanford Slide 2 ... Stat.Carr.Chain Stat.Carr.Sel Stat. KS Dom. BK Dom. KS

Slide 13

Reducing Energy Waste

• Clock gating• If a section is idle, remove clock

• Removes clock power

• Prevents any internal node from transitioning

• Create system power states• Turn on subsystems only when they are needed

• Can have different “off” states• Power vs. wakeup time

• Disk (do you stop it from spinning?)

Slide 14

Embedded Power Gating

• Can reduce leakage• 250x reported

• But costs• Performance• Drop in Vdd, Gnd

EmbeddedPower

Switches

Rows ofStandard

Cells

Power SwitchControl Signals

• Since transistors still leak when power is off

Royannez, et al, 90nm Low Leakage SoC Design Techniques for Wireless Applications, ISSCC 2005

Page 8: Mark Horowitz, Stanfordocin06/talks/horowitz.pdf · Scaling, Power and the Future of CMOS Mark Horowitz, Stanford Slide 2 ... Stat.Carr.Chain Stat.Carr.Sel Stat. KS Dom. BK Dom. KS

Slide 15

Range of Applicability• Power supply gating

• Done to remove leakage power

• But slows down the circuit• Adds series resistance to the supply

Performance

En

erg

y/o

p

Makes circuit worse when energy sensitivity is high

Slide 16

Parallelism

• If the application has data parallelism

• Parallelism is a way to improve performance• With low additional energy cost

Page 9: Mark Horowitz, Stanfordocin06/talks/horowitz.pdf · Scaling, Power and the Future of CMOS Mark Horowitz, Stanford Slide 2 ... Stat.Carr.Chain Stat.Carr.Sel Stat. KS Dom. BK Dom. KS

Slide 17

Existing Processors

0.01

0.1

1

1 10 100 1000Spec2000*L

Wat

ts/(

Sp

ec*L

*Vd

d2)

10 processors working in parallel

Slide 18

Problem Reformulation

• Best way to save energy is to do less work• Energy directly reduced by the reduction in work

• But required time for the function decreases as well• Convert this into extra power gains

• Shifts the optimal curve down and to the right

User Performance

En

erg

y/o

p

Page 10: Mark Horowitz, Stanfordocin06/talks/horowitz.pdf · Scaling, Power and the Future of CMOS Mark Horowitz, Stanford Slide 2 ... Stat.Carr.Chain Stat.Carr.Sel Stat. KS Dom. BK Dom. KS

Slide 19

Cost of Variation

• Variability changes position of the optimal curves• Need to margin Vth, Vdd to ensure circuit always works

10-1

100

10-1

100

101

Performance

En

erg

y

Δ Vth = 0 mV

Δ Vth = 120 mV

Slide 20

Partial Compensation

• Adjust Vdd after you get part back• Compensates very well for small deviations in Vth

10-1

100

10-1

100

101

Performance

En

erg

y

Δ Vth = 0 mV

Δ Vth = 120 mV

Page 11: Mark Horowitz, Stanfordocin06/talks/horowitz.pdf · Scaling, Power and the Future of CMOS Mark Horowitz, Stanford Slide 2 ... Stat.Carr.Chain Stat.Carr.Sel Stat. KS Dom. BK Dom. KS

Slide 21

Variable Application Demands

• Try to provide a couple of operating points• Application can control speed and energy

• Hard question is what are valid Vdd, F pairs• Usually determined during test

• Dynamic voltage scaling• Intel Speed Step in laptop processors

• 2 performance/power points

• Transmeta Long Run Technology• Many operating points. Test data + formula

Slide 22

Constant Power Scaling

• Foxton controller on next-gen. Itanium II• Raises Vdd/boosts F when most units idle

• Lowers Vdd for parallel code to stay in budget

Page 12: Mark Horowitz, Stanfordocin06/talks/horowitz.pdf · Scaling, Power and the Future of CMOS Mark Horowitz, Stanford Slide 2 ... Stat.Carr.Chain Stat.Carr.Sel Stat. KS Dom. BK Dom. KS

Slide 23

Self Checking Hardware

• Razor (Austin/Blaauw, U of Mich)• Use the actual hardware to check for errors

• Latch the input data twice• Once on the clock edge, and then a little later

• If the data is not the same, you are going too fast

Din 0

clk_del

Q[0]Din 1Din 2

error

clk

Error_L

comparator

RAZOR FF

Main Flip-Flop

Shadow Latch

01

Slide 24

Future Systems

• Some simple math• Assume scaling continues

• Dies don’t shrink in size

• Average power/gate must decrease by 2x / generation

• Since gates are shrinking in size• Get 1.4x from capacitive reduction

• Where is the other factor of 1.4x ?

Page 13: Mark Horowitz, Stanfordocin06/talks/horowitz.pdf · Scaling, Power and the Future of CMOS Mark Horowitz, Stanford Slide 2 ... Stat.Carr.Chain Stat.Carr.Sel Stat. KS Dom. BK Dom. KS

Slide 25

Exploit Parallelism / Scale Vdd

• If you have parallelism• Add more function units

• Fill up new die (2x)

• Lower energy/op• ΔE/ΔP will decrease• Vdd, sizes, etc will reduce

• Build simpler architectures

• Works well when ΔE/ΔP is large• Per unit performance decrease is small

Performance

En

erg

y/o

p

Slide 26

Exploit Specialization

• Optimize execution units for different applications• Reformulate the hardware to reduce needed work

• Can improve energy efficiency for a class of applications

• Stream / Vector processing is a current example• Exploit locality, reuse

• High compute densityμ-controller

ClustersSRF

Mem

ory

Sys

tem

HISC NI

Bill Dally et al, Stanford Imagine

Page 14: Mark Horowitz, Stanfordocin06/talks/horowitz.pdf · Scaling, Power and the Future of CMOS Mark Horowitz, Stanford Slide 2 ... Stat.Carr.Chain Stat.Carr.Sel Stat. KS Dom. BK Dom. KS

Slide 27

Exploit Integration

• If both those techniques don’t work• Still can increase integration by at least 1.4x

• Moving units onto one chip• Reduces the number of I/Os on system

• I/O can take significant power today

• Allows even larger integration

Slide 28

TI - OMAP2420• Specialization• And power domains

• Most units are off

• OMAP 2420 • 5 Power Domains• #1: MCU Core• #2: DSP Core• #3: Graphic Accelerator• #4: Core + Periph.• #5: Always On logic

Royannez, et al, 90nm Low Leakage SoC Design Techniques for Wireless Applications, ISSCC 2005

Page 15: Mark Horowitz, Stanfordocin06/talks/horowitz.pdf · Scaling, Power and the Future of CMOS Mark Horowitz, Stanford Slide 2 ... Stat.Carr.Chain Stat.Carr.Sel Stat. KS Dom. BK Dom. KS

Slide 29

What All This Means

• As long as $/function and cap continue to scale• Moving to the new technology will be profitable

• And will allow designs to be better systems

• In the worst case, active die area will decrease• Scale gates by the decrease in gate capacitance

• In most cases, we will do much better• But effectiveness of a gate must go down

• Either have lower duty cycle

• Or lower energy by lowering Vdd, which makes it slower

Slide 30

Conclusions

• Unfortunately power is an old problem• Magic bullets have mostly been spent

• Power will be addressed by application-level optimization, parallelism/specialized functional units, and more adaptive control

• Performance growth will slow• NRE costs will be a very large issue

• More performance will require application specialization