14
© Semiconductor Components Industries, LLC, 2006 July, 2006 Rev. 4 1 Publication Order Number: MC33680/D MC33680 Dual DC-DC Regulator for Electronic Organizer The MC33680 is a dual DCDC regulator designed for electronic organizer applications. Both regulators apply PulseFrequencyModulation (PFM). The main stepup regulator output can be externally adjusted from 2.7V to 5V. An internal synchronous rectifier is used to ensure high efficiency (achieve 87%). The auxiliary regulator with a builtin power transistor can be configured to produce a wide range of positive voltage (can be used for LCD contrast voltage). This voltage can be adjusted from +5V to +25V by an external potentiometer. The MC33680 has been designed for battery powered handheld products. With the low startup voltage from 1V and the low quiescent current (typical 35 μA); the MC33680 is best suited to operate from 1 to 2 AA/ AAA cell. Moreover, supervisory functions such as low battery detection, CPU PowerGood signal, and backup battery control, for lithium battery or supercap are also included in the chip. FEATURES: Low Input Voltage, 1V up Low Quiescent Current in Standby Mode: 35μA typical PFM and Synchronous Rectification to ensure high efficiency (87% @60mA Load) Adjustable Main Output: +2.7V to +5V nominal 3.3V @ 100mA max, with 1.8V input Auxiliary Output Voltage: +5V to +25V +5V @ 25mA max, with 1.8V input +25V @ 15mA max, with 1.8V input Current Limit Protection PowerGood Signal with Programmable Delay Battery Low Detection Lithium Battery or Supercap Backup 32Pin LQFP Package APPLICATIONS: Digital Organizer and Dictionary Dual Output Power Supply (For MPU, Logic, Memory, LCD) Handheld Battery Powered Device (12 AA/AAA cell) 32LEAD LQFP FTB SUFFIX CASE 873A PIN CONNECTIONS & DEVICE MARKING (Top View) Device Package Shipping ORDERING INFORMATION MC33680FTB LQFP 1250 Tray / Drypack 1 32 LOWBATSEN NC DGND LIBATCL LOWBATB PORB NC VAUXBASE VAUXCHG VAUXFBN VAUXBDV NC VAUXFBP VAUXEN DGND FTB VMAINFB VBAT VBAT VDD PDELAY VREF AGND IREF LIBATON VAUXSW VAUXEMR LIBATIN LIBATOUT NC VMAINGND VMAINSW VMAIN MC33680 AWLYYWW MC33680FTBR2 LQFP 1800 / Tape & Reel http://onsemi.com

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Page 1: MC33680 Dual DC−DC Regulator for Electronic Organizer Sheets/ON Semiconductor PDFs/… · MC33680 2 Figure 1. Detailed Application Block Diagram +ve Edge Delay R S Q R S Q Qb 1−SHOT

© Semiconductor Components Industries, LLC, 2006

July, 2006 − Rev. 41 Publication Order Number:

MC33680/D

MC33680

Dual DC−DC Regulator forElectronic Organizer

The MC33680 is a dual DC−DC regulator designed for electronico rgan i ze r app l i ca t i ons . Bo th r egu l a to r s app lyPulse−Frequency−Modulation (PFM). The main step−up regulatoroutput can be externally adjusted from 2.7V to 5V. An internalsynchronous rectifier is used to ensure high efficiency (achieve 87%).The auxiliary regulator with a built−in power transistor can beconfigured to produce a wide range of positive voltage (can be usedfor LCD contrast voltage). This voltage can be adjusted from +5V to+25V by an external potentiometer.

The MC33680 has been designed for battery powered hand−heldproducts. With the low start−up voltage from 1V and the low quiescentcurrent (typical 35 μA); the MC33680 is best suited to operate from 1to 2 AA/ AAA cell. Moreover, supervisory functions such as lowbattery detection, CPU Power−Good signal, and back−up batterycontrol, for lithium battery or supercap are also included in the chip.

FEATURES:

• Low Input Voltage, 1V up

• Low Quiescent Current in Standby Mode: 35μA typical

• PFM and Synchronous Rectification to ensure high efficiency (87% @60mA Load)

• Adjustable Main Output: +2.7V to +5Vnominal 3.3V @ 100mA max, with 1.8V input

• Auxiliary Output Voltage: +5V to +25V +5V @ 25mA max, with 1.8V input +25V @ 15mA max, with 1.8V input

• Current Limit Protection

• Power−Good Signal with Programmable Delay

• Battery Low Detection

• Lithium Battery or Supercap Back−up

• 32−Pin LQFP Package

APPLICATIONS:

• Digital Organizer and Dictionary

• Dual Output Power Supply (For MPU, Logic, Memory, LCD)

• Handheld Battery Powered Device (1−2 AA/AAA cell)

32−LEAD LQFPFTB SUFFIXCASE 873A

PIN CONNECTIONS &DEVICE MARKING

(Top View)

Device Package Shipping

ORDERING INFORMATION

MC33680FTB LQFP 1250 Tray / Drypack

132

LOWBATSEN

NC

DGND

LIBATCL

LOWBATB

PORB

NC

VA

UX

BA

SE

VA

UX

CH

G

VA

UX

FB

N

VA

UX

BD

V

NC

VA

UX

FB

P

VA

UX

EN

DGND

FTBV

MA

INF

B

VB

AT

VB

AT

VD

D

PD

ELA

Y

VR

EF

AG

ND

IRE

F

LIBATON

VAUXSW

VAUXEMR

LIBATIN

LIBATOUT

NC

VMAINGND

VMAINSW

VMAIN

MC33680

AWLYYWW

MC33680FTBR2 LQFP 1800 / Tape & Reel

http://onsemi.com

Page 2: MC33680 Dual DC−DC Regulator for Electronic Organizer Sheets/ON Semiconductor PDFs/… · MC33680 2 Figure 1. Detailed Application Block Diagram +ve Edge Delay R S Q R S Q Qb 1−SHOT

MC33680

http://onsemi.com2

Figure 1. Detailed Application Block Diagram

+ve Edge Delay

R

S

Q

R

S

Q

Qb

1−SHOT

VBAT

VoltageReference

Main Regulatorwith Synchronous Rectifier

Voltage ReferenceCurrent Bias& Supervisory

AGND

1.22 V

0.5 V

x2

VCOMP

for Min. OFF Time

ILIM DGND

VDD

L133 �H

CMAIN100 �F

VMAINGNDDGND

VDD

M1

M2senseFET

ZLC

for Max. ON Time

COMP2

COMP3

COMP1

VMAIN

+

30

32

Power−OnReset

LithiumBatteryBackup

RIref480 k�

8 IREF 7 AGND 6 VREF 5 PDELAY 4 VDD

+ +

3 VBAT 2 VBAT 1 VMAINFB

VBAT

VBAT

+ve Edge Delay

R

S

Q

Qb

1−SHOT

for Min. OFF Time

AGND

ILIM

VAUXEMR

Q1

senseBJTfor Max. ON Time

COMP2

+

26

AGND

VBAT

VAUXSW

25

LIBATOUT

28

LIBATIN

27

VBAT

L233 �H

Auxiliary Regulator

20VAUXFBN

18VAUXFBP

17VAUXEN

21VAUXBDV

23VAUXBASE

22VAUXCHG

200 k�RAUXa

2200 k�RAUXb

VCOMP

15

14

13

12

DGND

LIBATCL

LIBATON

LOWBATB

0.85 V,1.1 V

CAUX30 �F

MBRA140T3

11

PORB

10

DGND

9

300 k�RLBa

900 k�RLBb

LOBAT−SEN

CPOR80 nF

CVDD20 �F

CMAINb100 pF

RMAINb

1000 k�

MBRA130LT1

31

VMAINSW

5

COMP1

Page 3: MC33680 Dual DC−DC Regulator for Electronic Organizer Sheets/ON Semiconductor PDFs/… · MC33680 2 Figure 1. Detailed Application Block Diagram +ve Edge Delay R S Q R S Q Qb 1−SHOT

MC33680

http://onsemi.com3

TIMING DIAGRAMS

LOWBATB

VBAT

VMAIN

PORB

LOWBAT Threshold

VMAINreg − 0.5 V

VAUXEN

PORB

VMAIN

VBAT

tPORC

VMAINreg − 0.15 VVMAINreg

TPOR � �1.220.5�� Cpor � RIref

Figure 2. Startup Timing

Figure 3. Power Down Timing

Page 4: MC33680 Dual DC−DC Regulator for Electronic Organizer Sheets/ON Semiconductor PDFs/… · MC33680 2 Figure 1. Detailed Application Block Diagram +ve Edge Delay R S Q R S Q Qb 1−SHOT

MC33680

http://onsemi.com4

PIN FUNCTION DESCRIPTION

PinNo. Function Type/Direction Description

ÁÁÁÁÁÁÁÁ

1 ÁÁÁÁÁÁÁÁÁÁÁÁ

VMAINFB ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Analog / Input ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Feedback pin for VMAIN

ÁÁÁÁÁÁÁÁ

2 ÁÁÁÁÁÁÁÁÁÁÁÁ

VBAT ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Power ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Main battery supply

ÁÁÁÁÁÁÁÁ

3 ÁÁÁÁÁÁÁÁÁÁÁÁ

VBAT ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Power ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Main battery supply

ÁÁÁÁÁÁÁÁ

4 ÁÁÁÁÁÁÁÁÁÁÁÁ

VDD ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Analog / Output ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Connect to decoupling capacitor for internal logic supply

ÁÁÁÁÁÁÁÁ

5 ÁÁÁÁÁÁÁÁÁÁÁÁ

PDELAY ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Analog / Input ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Capacitor connection for defining Power−On signal delayÁÁÁÁÁÁÁÁ

6ÁÁÁÁÁÁÁÁÁÁÁÁ

VREFÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Analog / OutputÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Bandgap Reference output voltage. Nominal voltage is 1.25VÁÁÁÁÁÁÁÁ

7ÁÁÁÁÁÁÁÁÁÁÁÁ

AGNDÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Analog GroundÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁ8ÁÁÁÁÁÁÁÁÁÁÁÁ

IREFÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Analog / InputÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Resistor connection for defining internal current bias and PDELAY currentÁÁÁÁÁÁÁÁ9

ÁÁÁÁÁÁÁÁÁÁÁÁLOWBATSEN

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁAnalog / Input

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁResistive network connection for defining low battery detect thresholdÁÁÁÁ

ÁÁÁÁ10ÁÁÁÁÁÁÁÁÁÁÁÁDGND

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁDigital Ground

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁ

11ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

PORBÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

CMOS / OutputÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Active LOW Power−On reset signal

ÁÁÁÁÁÁÁÁ

12 ÁÁÁÁÁÁÁÁÁÁÁÁ

LOWBATB ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

CMOS / Output ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Active LOW low battery detect output

ÁÁÁÁÁÁÁÁ

13 ÁÁÁÁÁÁÁÁÁÁÁÁ

LIBATON ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

CMOS / Input ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

microprocessor control signal for Lithium battery backup switch, the switch isON when LIBATON=HIGH and LIBATCL=HIGH

ÁÁÁÁÁÁÁÁÁÁÁÁ

14ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

LIBATCLÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

CMOS / InputÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

microprocessor control signal for Lithium battery backup switch, if it is HIGH,the switch is controlled by LIBATON, otherwise, controlled by internal logic

ÁÁÁÁÁÁÁÁ

15 ÁÁÁÁÁÁÁÁÁÁÁÁ

DGND ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Digital Ground ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁ16 ÁÁÁÁÁÁÁÁÁÁÁÁ

NC ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

no connection

ÁÁÁÁÁÁÁÁ

17 ÁÁÁÁÁÁÁÁÁÁÁÁ

VAUXEN ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

CMOS / Input ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

VAUX enable, Active highÁÁÁÁÁÁÁÁ

18ÁÁÁÁÁÁÁÁÁÁÁÁ

VAUXFBPÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Analog / InputÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Feedback pin for VAUXÁÁÁÁÁÁÁÁ

19ÁÁÁÁÁÁÁÁÁÁÁÁ

NCÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

no connectionÁÁÁÁÁÁÁÁ

20ÁÁÁÁÁÁÁÁÁÁÁÁ

VAUXFBNÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Analog / InputÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Feedback pin for VAUXÁÁÁÁÁÁÁÁ21

ÁÁÁÁÁÁÁÁÁÁÁÁVAUXBDV

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁPower

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁVAUX BJT base drive circuit power supplyÁÁÁÁ

ÁÁÁÁ22ÁÁÁÁÁÁÁÁÁÁÁÁVAUXCHG

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁAnalog / Output

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁtest pinÁÁÁÁ

ÁÁÁÁÁÁÁÁ

23ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

VAUXBASEÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Analog / OutputÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

test pin

ÁÁÁÁÁÁÁÁ

24 ÁÁÁÁÁÁÁÁÁÁÁÁ

NC ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

no connection

ÁÁÁÁÁÁÁÁ

25 ÁÁÁÁÁÁÁÁÁÁÁÁ

VAUXSW ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Analog / Output ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Collector output of the VAUX power BJT

ÁÁÁÁÁÁÁÁ

26 ÁÁÁÁÁÁÁÁÁÁÁÁ

VAUXEMR ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Analog / Output ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Emitter output of the VAUX power BJT

ÁÁÁÁÁÁÁÁ

27 ÁÁÁÁÁÁÁÁÁÁÁÁ

LIBATIN ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Analog / Input ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Lithium battery input for backup purposes

ÁÁÁÁÁÁÁÁ

28 ÁÁÁÁÁÁÁÁÁÁÁÁ

LIBATOUT ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Analog / Output ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Lithium battery output

ÁÁÁÁÁÁÁÁ

29 ÁÁÁÁÁÁÁÁÁÁÁÁ

NC ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

no connection

ÁÁÁÁÁÁÁÁ

30 ÁÁÁÁÁÁÁÁÁÁÁÁ

VMAINGND ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Power Ground ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Ground for VMAIN low side switch

ÁÁÁÁÁÁÁÁ

31 ÁÁÁÁÁÁÁÁÁÁÁÁ

VMAINSW ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Analog / Input ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

VMAIN inductor connection

ÁÁÁÁÁÁÁÁ

32 ÁÁÁÁÁÁÁÁÁÁÁÁ

VMAIN ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Analog / Output ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

VMAIN output

Page 5: MC33680 Dual DC−DC Regulator for Electronic Organizer Sheets/ON Semiconductor PDFs/… · MC33680 2 Figure 1. Detailed Application Block Diagram +ve Edge Delay R S Q R S Q Qb 1−SHOT

MC33680

http://onsemi.com5

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted.)

Parameter Symbol Min Max Unit

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Power Supply Voltage ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

VBAT ÁÁÁÁÁÁÁÁÁÁ

−0.3 ÁÁÁÁÁÁÁÁÁÁ

7.0 ÁÁÁÁÁÁÁÁ

VdcDigital Pin Voltage Vdigital −0.3 7.0 VdcGeneral Analog Pin Voltage Vanalog −0.3 7.0 VdcPin VAUXSW to Pin VAUXEMR Voltage (Continuous) VAUXCE −0.3 30 Vdc

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Pin VMAINSW to Pin VMAIN Voltage (Continuous) ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Vsyn ÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁ

0.3 ÁÁÁÁÁÁÁÁ

Vdc

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Operating Junction Temperature ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Tj (max) ÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁÁÁÁÁ

150 ÁÁÁÁÁÁÁÁ

°C

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Ambient Operating Temperature ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Ta ÁÁÁÁÁÁÁÁÁÁ

0 ÁÁÁÁÁÁÁÁÁÁ

70 ÁÁÁÁÁÁÁÁ

°C

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Storage Temperature ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

Tstg ÁÁÁÁÁÁÁÁÁÁ

−50 ÁÁÁÁÁÁÁÁÁÁ

150 ÁÁÁÁÁÁÁÁ

°C

STATIC ELECTRICAL CHARACTERISTICS (Circuit of Figure 1, VP = 1.8V, Iload = 0 mA, TA = 0 to 70°C unlessotherwise noted.)

Rating Symbol Min Typ Max Unit

Operating Supply Voltage1 VBAT 1.0 V

VMAIN output voltage Vmain 3.1 3.3 3.5 V

VMAIN output voltage range2 Vmain_range 2.7 5.0 V

VMAIN output current3 I3.3_1.8 200 mA

VMAIN maximum switching frequency4 Freqmax_VM 100 kHz

VMAIN peak coil static current limit ILIM_VM 0.85 1.0 1.15 A

VAUX output voltage range VAUX_range 5.0 25 V

VAUX maximum switching frequency Freqmax_VL 120 kHz

VAUX peak coil static current limit ILIM_VL 1.0 A

Quiescent Supply Current at Standby Mode5 Iqstandby 35 60 μA

Reference Voltage @ no load Vrefno_load 1.16 1.22 1.28 V

Battery Low Detect lower hysteresis threshold6 VLOBAT_L 0.8 0.85 0.9 V

Battery Low Detect upper hysteresis threshold VLOBAT_H 1.05 1.1 1.15 V

PDELAY Pin output charging current IchgPDELAY 0.8 1.0 1.2 μA

PDELAY Pin voltage threshold VthPDELAY 1.16 1.22 1.28 V

NOTE: 1. Output current capability is reduced with supply voltage due to decreased energy transfer. The supply voltage must not be higher than VMAIN+0.6V to ensure boost operation. Max Start−up loading is typically 1V at 400 μA, 1.8V at 4.4 mA, and 2.2V at 88 mA.

NOTE: 2. Output voltage can be adjusted by external resistor to the VMAINFB pin.NOTE: 3. At VBAT = 1.8V, output current capability increases with VBAT.NOTE: 4. Only when current limit is not reached.NOTE: 5. This is average current consumed by the IC from VDD, which is low−pass filtered from VMAIN, when only VMAIN is enabled and at no loading.NOTE: 6. This is the minimum of ”LOWBATB” threshold for battery voltage, the threshold can be increased by external resistor divider from ”VBAT” to

”LOWBATSEN”.

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DYNAMIC ELECTRICAL CHARACTERISTICS (Refer to TIMING DIAGRAMS, TA = 0 to 70°C unless otherwise noted.)

Rating Symbol Min Typ Max Unit

Minimum PORB to Control delay tPORC 500 nS

1

80%

1

90%

1

80%

0

90%

VIN, INPUT VOLTAGE (V)

VIN, INPUT VOLTAGE (V)

Eff

VA

UX

, EF

FIC

IEN

CY

OF

VA

UX

(%

)

IOUT_AUX, AUX OUTPUT CURRENT (mA)

Eff

VM

AIN

, EF

FIC

IEN

CY

OF

VM

AIN

(%

)

Figure 4. Efficiency of VMAIN versus OutputCurrent (VMAIN = 3.3 V, L = 33 uH, Various VIN)

IOUT_MAIN, MAIN OUTPUT CURRENT (mA)

Figure 5. Efficiency of VMAIN versus InputVoltage (VMAIN = 3.3 V, L1 = 33 uH, Various IOUT)

Figure 6. Efficiency of VAUX versus OutputCurrent (VAUX = 25 V, L2 = 33 uH, Various VIN)

Figure 7. Efficiency of VAUX versus InputVoltage (VAUX = 25 V, L2 = 33 uH, Various IOUT)

85%

80%

75%

70%

10 60 70 80 90 100

Eff

VM

AIN

, EF

FIC

IEN

CY

OF

VM

AIN

(%

)

85%

80%

75%

70%

1.5 2 3

75%

70%

65%

60%

55%

50%

3 5 7 11 13 15

75%

70%

65%

60%

55%

50%

1.5 2 2.5 3

Eff

VA

UX

, EF

FIC

IEN

CY

OF

VA

UX

(%

)

2.5

9

Vin = 3VVin = 1.8VVin = 1.5VVin = 1V

Iout = 10mAIout = 60mAIout = 100mA

Iout = 1mAIout = 5mAIout = 10mAIout = 15mA

Vin = 3VVin = 1.8VVin = 1.5VVin = 1V

20 30 40 50

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1

80%

1

80%

VIN, INPUT VOLTAGE (V)

Eff

VA

UX

, EF

FIC

IEN

CY

OF

VA

UX

(%

)

IOUT_AUX, AUX OUTPUT CURRENT (mA)

Figure 8. Efficiency of VAUX versus OutputCurrent (VAUX = 20 V, L2 = 33 uH, Various VIN)

Figure 9. Efficiency of VAUX versus InputVoltage (VAUX = 20 V, L2 = 33 uH, Various IOUT)

75%

70%

65%

60%

55%

50%

3 5 7 11 13 15

75%

70%

65%

60%

55%

50%1.5 2 2.5 3

Eff

VA

UX

, EF

FIC

IEN

CY

OF

VA

UX

(%

)

1

85%

1

65%

VIN, INPUT VOLTAGE (V)

Eff

VA

UX

, EF

FIC

IEN

CY

OF

VA

UX

(%

)

Figure 10. Efficiency of VAUX versus OutputCurrent (VAUX = 5 V, L2 = 82 uH, Various VIN)

IOUT_AUX, AUX OUTPUT CURRENT (mA)

Figure 11. Efficiency of VAUX versus InputVoltage (VAUX = 5 V, L2 = 82 uH, Various IOUT)

85%

50%

45%

40%

5 10 15 30 35

75%

80%

50%

2 2.5 320 25

60%

55%

70%

80%

75%

70%

65%

1.5

Eff

VA

UX

, EF

FIC

IEN

CY

OF

VA

UX

(%

)

9

Vin = 3VVin = 1.8VVin = 1.5VVin = 1V

Iout = 1mAIout = 5mAIout = 10mAIout = 15mA

Vin = 3VVin = 2.4VVin = 1.8VVin = 1.5VVin = 1V

Iout = 1VIout = 5VIout = 10VIout = 15VIout = 25V

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10 uS / div

10 uS / div

20 uS / div

20 uS / div

Figure 12. VMAIN Output Ripple (Medium Load) Figure 13. VMAIN Output Ripple (Heavy Load)

Figure 14. VAUX Output Ripple (Medium Load) Figure 15. VAUX Output Ripple (Heavy Load)

1: VMAIN = 3.3 V (50 mV/div, AC COUPLED)2: Voltage at VMAINSW (1 V/div)

1: VMAIN = 3.3 V (50 mV/div, AC COUPLED)2: Voltage at VMAINSW (1 V/div)

1: VAUX = 20 V (50 mV/div, AC COUPLED)2: Voltage at VAUXSW (10 V/div)

1: VAUX = 20 V (50 mV/div, AC COUPLED)2: Voltage at VAUXSW (10 V/div)

5 mS / div

Figure 16. VMAIN Startup and Power−Good Signal

50 mS / div

Figure 17. VAUX Startup

1: VMAIN from 1 V to 3.3 V (1 V/div)2: Voltage of PORB (2 V/div)3: Voltage of ENABLE (2 V/div)

1: VAUX from 1.8 V to 20 V (5 V/div)2: VAUXEN (2 V/div)

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DETAILED OPERATING DESCRIPTIONGeneral

The MC33680 is a dual DC−DC regulator designed forelectronic organizer applications. Both regulators applyPulse−Frequency−Modulation (PFM). The main boostregulator output can be externally adjusted from 2.7V to 5V.An internal synchronous rectifier is used to ensure highefficiency (achieve 87%). The auxiliary regulator with abuilt−in power transistor can be configured to produce awide range of positive voltage (can be used for LCD contrastvoltage). This voltage can be adjusted from +5V to +25V byan external potentiometer.

The MC33680 has been designed for battery poweredhand−held products. With the low start−up voltage from 1Vand the low quiescent current (typical 35 μA), the MC33680is best suited to operate from 1 to 2 AA/ AAA cell.Moreover, supervisory functions such as low batterydetection, CPU Power−Good signal, and back−up batterycontrol, are also included in the chip. It makes the MC33680the best one−chip power management solution forapplications such as electronic organizers and PDAs.

Pulse Frequency Modulation (PFM)Both regulators apply PFM. With this switching scheme,

every cycle is started as the feedback voltage is lower thanthe internal reference. This is normally performed byinternal comparator. As cycle starts, Low−Side switch (i.e.M1 in Figure 1) is turned ON for a fixed ON time duration(namely, Ton) unless current limit comparator senses coilcurrent has reached its preset limit. In the latter case, M1 isOFF instantly. So Ton is defined as the maximum ON timeof M1. When M1 is ON, coil current ramps up, so energy isbeing stored inside the coil. At the moment just after M1 isOFF, the Synchronous Rectifier (i.e. M2 in Figure 1) or anyrectification device (such as Schottky Diode of AuxiliaryRegulator) is turned ON to direct coil current to charge upthe output bulk capacitor. Provided that coil current limit isnot reached, every switching cycle delivers fixed amount ofenergy to the bulk capacitor. For higher loading, a largeramount of energy (Charge) is withdrawn from the bulkcapacitor, and a larger amount of Charge is then supplied tothe bulk capacitor to regulate output voltage. This impliesswitching frequency is increased; and vice−versa.

Main RegulatorFigure 18 shows the simplified block diagram of Main

Regulator. Notice that precise bias current Iref is generatedby a VI converter and external resistor RIref, where

Iref � 0.5RIref

(A)

This bias current is used for all internal current bias as wellas setting VMAIN value. For the latter application, Iref isdoubled and fed as current sink at Pin 1. With externalresistor RMAINb tied from Pin1 to Pin32, a constant voltagelevel shift is generated in between the two pins. Inclose−loop operation, voltage at Pin 1 (i.e. Output feedbackvoltage) is needed to be regulated at the internal referencevoltage level, 1.22V. Therefore, the delta voltage across Pin1 and Pin 32 which can be adjusted by RMAINb determinesthe Main Output voltage. If the feedback voltage dropsbelow 1.22V, internal comparator sets switching cycle tostart. So, VMAIN can be calculated as follows.

VMAIN � 1.22 � RMAINbRIref

(V)

From the above equation, although VMAIN can beadjusted by RMAINb and RIref ratio, for setting VMAIN, itis suggested, by changing RMAINb value with RIref kept at480K. Since changing RIref will alter internal bias currentwhich will affect timing functions of Max ON time (TON1)and Min OFF time (TOFF1). Their relationships are asfollows;

TON1 � 1.7 � 10–11 � RIref (S)

TOFF1 � 6.4 � 10–12 � RIref (S)

Continuous Conduction Mode and DiscontinuousConduction Mode

In Figure 19, regulator is operating at ContinuousConduction Mode. A switching cycle is started as the outputfeedback voltage drops below internal voltage referenceVREF. At that instant, the coil current is not yet zero, and itstarts to ramp up for the next cycle. As the coil current rampsup, loading makes the output voltage to decrease as theenergy supply path to the output bulk capacitor isdisconnected. After Ton elapses, M1 is OFF, M2 is ON,energy is pumped to the bulk capacitor. Output voltage isincreased as excessive charge is pumped in, then it isdecreased after the coil current drops below the loading.Notice the abrupt spike of output voltage is due to ESR of thebulk capacitor. Feedback voltage can be resistor−divideddown or level−shift down from the output voltage. As thisfeedback voltage drops below VREF, next switching cyclestarts.

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DETAILED OPERATING DESCRIPTION (Cont’d)

Figure 18. Simplified Block Diagram of Main Regulator

+ve Edge Delay

R

S

Q

R

S

Q

Qb

1−SHOT

VBAT

VoltageReference

Main Regulatorwith Synchronous Rectifier

Voltage Reference& Current Bias

AGND

1.22 V

0.5 V

x2

RIref480 kOhm

VMAINFB

CMAINb100 pF

VCOMP

for Min. OFF Time

AGND

ILIMDGND

VDD

RMAINb1000 kOhm

L133uH

CMAIN100 uF

VMAINSW

VMAINGNDDGND

VDD

M1

M2

senseFET

Iref

2 x Iref

ZLC

for Max. ON Time

COMP2

COMP3

COMP1

VMAIN

+

30

32

311

8

IREF

In Figure 20, regulator is operating at DiscontinuousConduction Mode, waveforms are similar to those of Figure19. However, coil current drops to zero before nextswitching cycle starts.

To estimate conduction mode, below equation can beused.

Iroom ��� TON � Vin2

2 � L� Vout� ILOAD

where, η is efficiency, refer to Figure 4

if Iroom > 0, the regulator is at Discontinuous Conductionmode

if Iroom = 0, the regulator is at Critical Conduction modewhere coil current just drops to zero and next cycle starts.

if Iroom < 0, the regulator is at Continuous Conductionmode

For Continuous Conduction mode, provided that currentlimit is not reached,

TSW �TON

1 � � � VinVout

�(S);

Ipk �ILOAD

1 ��TONTSW�

�Vin� TON

2 � L(A)

For Discontinuous Conduction mode, provided thatcurrent limit is not reached,

TSW �Vin �T 2

ON

2 � L � ILOAD � � Vout��Vin

� 1�(S);

Ipk � VinL

� TON (A)

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VMAIN Zoom−In

V@SW

VMAIN

Coil Current

Loading Current, ILOAD

0 V

VMAIN + 1 V

TSW

TONIpk

VREF

Feedback Voltage

M1 ON

M2 OFF

M1 ON

M2 OFF

M1 ON

M2 OFF

M1 OFF

M2 ON

M1 OFF

M2 ON

M1 OFF

M2 ON

Cycle Starts

tdh

tdl

Figure 19. Waveforms of Continuous Conduction Mode

VMAIN Zoom−In

V@SW

VMAIN

Coil Current

Loading Current, ILOAD

VMAIN + 1 V TSW

TON

Ipk

VREF

Feedback Voltage

M1 ON

M2 OFF

M1 ON

M2 OFF

M1 ON

M2 OFF

M1 OFF M1 OFF M1 OFF

Cycle Starts

tdh

tdl

VIN

0 V

Figure 20. Waveforms of Discontinuous Conduction Mode

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DETAILED OPERATING DESCRIPTION (Cont’d)Synchronous Rectification

A Synchronous Rectifier is used in the main regulator toenhance efficiency. Synchronous rectifier is normallyrealized by powerFET with gate control circuitry which,however, involved relative complicated timing concerns. InFigure 19, as main switch M1 is being turned OFF, if thesynchronous switch M2 is just turned ON with M1 not beingcompletely turned OFF, current will be shunted from theoutput bulk capacitor through M2 and M1 to ground. Thispower loss lowers overall efficiency. So a certain amount ofdead time is introduced to make sure M1 is completely OFFbefore M2 is being turned ON, this timing is indicated as tdhin Figure 20.

When the main regulator is operating in continuous mode,as M2 is being turned OFF, and M1 is just turned ON withM2 not being completed OFF, the above mentioned situationwill occur. So dead time is introduced to make sure M2 iscompleted OFF before M1 is being turned ON, this isindicated as tdl in Figure 20.

When the main regulator is operating in discontinuousmode, as coil current is dropped to zero, M2 is supposed tobe OFF. Fail to do so, reverse current will flow from theoutput bulk capacitor through M2 and then the inductor tothe battery input. It causes damage to the battery. SoM2−voltage−drop sensing comparator (COMP3 of Figure18) comes with fixed offset voltage to switch M2 OFFbefore any reverse current builds up. However, if M2 isswitch OFF too early, large residue coil current flowsthrough the body diode of M2 and increases conduction loss.

Therefore, determination on the offset voltage is essentialfor optimum performance.

Auxiliary RegulatorThe Auxiliary Regulator is a boost regulator, applies PFM

scheme to enhance high efficiency and reduce quiescentcurrent. An internal voltage comparator (COMP1 of Figure21) detects when the voltage of Pin VAUXFBN drops belowthat of Pin VAUXFBP. The internal power BJT is thenswitched ON for a fixed−ON−time (or until the internalcurrent limit is reached), and coil current is allowed to buildup. As the BJT is switched OFF, coil current will flowthrough the external Schottky diode to charge up the bulkcapacitor. After a fixed−mimimum−OFF time elapses, nextswitching cycle will start if the output of the voltagecomparator is HIGH. Refer to Figure 21, the VAUXregulation level is determined by the equation as follows,

VAUX� VAUXFBP � �1 �RAUXbRAUXa

� (V)

Where Max ON Time, TON2, and Min OFF Time, TOFF2can be determined by the following equations.

TON2 � 1.7 � 10–11 � RIref (S)

TOFF2 � 2.1 � 10–12 � RIref (S)

As the Auxiliary Regulator control scheme is the same asthe Main Regulator, equations for conduction mode, Tswand Ipk can also be applied, However, � to be used forcalculation is referred to Figures 6, 8, or 10.

Figure 21. Simplified Block Diagram of Auxiliary Regulator

+ve Edge Delay

R

S

Q

Qb

1−SHOT

for Min. OFF Time

for Max. ON Time

AGND

ILIM

COMP2

CAUX33 uF

+

VBAT

L233uH

Auxiliary Regulator

2018

VBAT

2521

RAUXb2200 kOhm

RAUXa200 kOhm

VAUXFBN VAUXSWVAUXBDVVAUXFBP

COMP1

VCOMPVAUXEMR

26

senseBJT

Q1

VREF

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DETAILED OPERATING DESCRIPTION (Cont’d)Current Limit for Both regulators

From Figure 18 and Figure 21, sense devices (senseFETor senseBJT) are applied to sample coil current as thelow−side switch is ON. With that sample current flowingthrough a sense resistor, sense−voltage is developed.Threshold detector (COMP2 in both Figures) detectswhether the sense−voltage is higher than preset level. If ithappens, detector output reset the flip−flop to switch OFFlow−side switch, and the switch can only be ON as nextcycle starts.

Power−Good SignalDuring the startup period (see Figure 2), the internal

startup circuitry is enabled to pump up VMAIN to a certainvoltage level, which is the user−defined VMAIN outputlevel minus an offset of 0.15V. The internal Power−Goodsignal is then enabled to activate the main regulator andconditionally the auxiliary regulator. Meanwhile, the startupcircuitry will be shut down. The Power−Good signal blockalso starts to charge up the external capacitor tied from PinPDELAY to ground with precise constant current. As the PinPDELAY’s voltage reaches an internal set threshold, PinPORB will go HIGH to awake the microprocessor. Thisdelay is stated as follows;

TPOR � �1.220.5�� Cpor� RIref (S)

From Figure 3, if, by any chance, VMAIN is droppedbelow the user−defined VMAIN output level minus 0.5V,PORB will go LOW to indicate the OUTPUT LOWsituation. And, the IC will continue to function until theVMAIN is dropped below 2V.

Low−Battery−DetectThe Low−Battery−Detect block is actually a voltage

comparator. Pin LOWBAT is LOW, if the voltage of externalPin LOWBATSEN is lower than 0.85V. The IC will neglectthis warning signal. Pin LOWBAT will become HIGH, if thevoltage of external Pin LOWBATSEN is recovered to morethan 1.1V. From Figure 1, with external resistors RLBa andRLBb, thresholds of Low−Battery−Detect can be adjustedbased on the equations below.

VLOBAThigh � 1.1 ��1 �RLBaRLBb� (V)

VLOBATlow � 0.85 ��1 �RLBaRLBb� (V)

Lithium−Battery backupThe backup conduction path which is provided by an

internal power switch (typ. 13 Ohm) can be controlled byinternal logic or microprocessor.

If LIBATCL is LOW, the switch, which is then controlledby internal logic, is ON when the battery is removed andVMAIN is dropped below LIBATIN by more than 100mV,and returns OFF when the battery is plugged back in.

If LIBATCL is HIGH, the switch is controlled bymicroprocessor through LIBATON. The truth table is shownin Figure 22.Efficiency and Output Ripple

For both regulators, when large values are used forfeedback resistors (> 50kOhm), stray capacitance of pin 1(VMAINFB) and pin 20 (VAUXFBN) can add ”lag” to thefeedback response, destabilizing the regulator and creatinga larger ripple at the output. From Figure 1, ripple of Mainand AUX regulator can be reduced by capacitors in parallelwith RMAINb, RAUXa and RAUXb ranging from 100pF to100nF respectively. Reducing the ripple is also withimproving efficiency, system designers are recommended todo experiments on capacitance values based on the PCBdesign.

Bypass CapacitorsIf the metal lead from battery to coils are long, its stray

resistance can put additional power loss to the system as ACcurrent is being conducted. In that case, bypass capacitorsshould be placed closely to the coil, and connected fromVBAT to ground. This reduces AC component of coil currentpassing through the long metal lead, thus minimizing thatportion of power loss.

LIBATCL LIBATON ActionÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

0 ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

X ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

The switch is ON when the battery is removed and VMAIN is dropped below LIBATIN bymore than 100mV; The switch is OFF when the battery is plugged in.

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

1ÁÁÁÁÁÁÁÁÁÁÁÁ

0ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

The switch is OFFÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

1ÁÁÁÁÁÁÁÁÁÁÁÁ

1ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

The switch is ON

Figure 22. Lithium Battery Backup Control Truth Table

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PACKAGE DIMENSIONS

32−LEAD LQFPPLASTIC PACKAGE

CASE 873A−02ISSUE A

ÉÉÉÉÉÉDETAIL Y

A

S1

VB

1

8

9

17

2532

AE

AE

P

DETAIL Y

BASE

N

J

DF

METAL

SECTION AE−AE

G

SEATINGPLANE

R

Q�

WK

X

0.25

0 (0

.010

)

GA

UG

E P

LA

NE

EC

H

DETAIL AD

NOTES:��1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.��2. CONTROLLING DIMENSION: MILLIMETER.��3. DATUM PLANE −AB− IS LOCATED AT BOTTOM

OF LEAD AND IS COINCIDENT WITH THE LEADWHERE THE LEAD EXITS THE PLASTIC BODY ATTHE BOTTOM OF THE PARTING LINE.

��4. DATUMS −T−, −U−, AND −Z− TO BEDETERMINED AT DATUM PLANE −AB−.

��5. DIMENSIONS S AND V TO BE DETERMINED ATSEATING PLANE −AC−.

��6. DIMENSIONS A AND B DO NOT INCLUDEMOLD PROTRUSION. ALLOWABLE PROTRUSIONIS 0.250 (0.010) PER SIDE. DIMENSIONS A AND BDO INCLUDE MOLD MISMATCH AND AREDETERMINED AT DATUM PLANE −AB−.

��7. DIMENSION D DOES NOT INCLUDE DAMBARPROTRUSION. DAMBAR PROTRUSION SHALLNOT CAUSE THE D DIMENSION TO EXCEED0.520 (0.020).

��8. MINIMUM SOLDER PLATE THICKNESS SHALLBE 0.0076 (0.0003).

��9. EXACT SHAPE OF EACH CORNER MAY VARYFROM DEPICTION.

DIM

A

MIN MAX MIN MAX

INCHES

7.000 BSC 0.276 BSC

MILLIMETERS

B 7.000 BSC 0.276 BSC

C 1.400 1.600 0.055 0.063D 0.300 0.450 0.012 0.018E 1.350 1.450 0.053 0.057F 0.300 0.400 0.012 0.016G 0.800 BSC 0.031 BSCH 0.050 0.150 0.002 0.006J 0.090 0.200 0.004 0.008K 0.500 0.700 0.020 0.028M 12 REF 12 REFN 0.090 0.160 0.004 0.006P 0.400 BSC 0.016 BSCQ 1 5 1 5 R 0.150 0.250 0.006 0.010

V 9.000 BSC 0.354 BSCV1 4.500 BSC 0.177 BSC

� �

� � � �

DETAIL AD

A1

B1V1

4X

S

4X

B1 3.500 BSC 0.138 BSC

A1 3.500 BSC 0.138 BSC

S 9.000 BSC 0.354 BSCS1 4.500 BSC 0.177 BSC

W 0.200 REF 0.008 REFX 1.000 REF 0.039 REF

9

−T−

−Z−

−U−

T−U0.20 (0.008) ZAC

T−U0.20 (0.008) ZAB

0.10 (0.004) AC

−AC−

−AB−

M�8X

−T−,

−U−,

−Z−

T−U

M0.

20 (

0.00

8)Z

AC

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