Measuring New Device Materials

7/29/2019 Measuring New Device Materials

1/22

Learn the latest techniques for ensuringelectrical measurement accuracy

Exploring the boundaries ofmaterials science or device development?

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Semiconuctor parameter analysis 2 | Pulse I-V testing of compoun semi evices/mater ia ls 4 | C-V character ization of solar cells 6| Pulse I-V testing of high power evices 8 | Iddq Testing 10

Ultra-low current measurements 12 | Focuse ion beam current monitoring 14 | Hall Effect & Graphene-base Materials 16 | Characterization of small crystals 18 | High brightness LEd testing 20

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2/22

Learn how you can get better correlation of results when you

perform multiple measurement types on a single system

Characterizing a semiconductor device, material, or process thoroughlyrequires the ability to make three types of measurements: precision DC I-Vmeasurements, AC impedance measurements (often made with a C-V meter),and ultra-fast or transient I-V measurements. Until recently, labs might have

required three separate test systems to obtain all three measurement types.In addition to added expense, using multiple systems makes it difcult tocombine different measurement types in a single application or to correlatethe results from different types of measurements accurately.Learn more.

Remote amplifier/switches and the multi-measurement performancecabling used to connect them to the probe manipulators on the wafer

prober are critical to integrating accurate ultra-fast I-V, C-V, and precisionDC I-V measurements into the same parametric analysis system.

Investigate how to get betterresults correlation at a lower cost.

Download our free white paper.

Semiconuctor parameter analysis 2 | Pulse I-V testing of compoun semi evices/mater ia ls 4 | C-V characterization of solar cells 6| Pulse I-V testing of high power evices 8 | Iddq Testing 10


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Let us offer advice on your application.Contact an appication enineer onine.
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3/22

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Tackle multiple test challenges with the

Model 4200-SCS Semiconductor Characterization System

Semiconuctor parameter analysis 2 | Pulse I-V testing of compoun semi evices/mater ia ls 4 | C-V character ization of solar cells 6 | Pulse I-V testing of hi gh power evices 8 | Iddq Testing 10


Need more details?

downoa the Moe4200-sCs ata heet.

Only the Model 4200-SCS Semiconductor Characteriz

ationSystem can handle all three measurement types: precision DC I-V, ACimpedance, and ultra-fast I-V or transient I-V. Low current measurementresolution can extend to 0.1fA. Capacitance measurements rangefrom femtoFarads (fF) to nanoFarads (nF) at frequencies from 1kHzto 10MHz. And ultra-fast I-V sourcing and measurement is as easy as

making DC measurements, and fast: measure both voltage and currentsimultaneously for up to one million samples at 5ns per sample. Forall known BTI test methodologies, an optional BTI Package includesall necessary hardware and software, while Automatic CharacterizationSuite (ACS) software supports full wafer- and cassette-level automationand includes NBTI/PBTI test libraries with easy-to-use GUIs.

Ready to request a quote or place an order?

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4/22

Ultra-fast I-V testing of compound semiconductor

devices and materialsPulsed I-V testing is often performed on devices made from III-V materials, suchas GaN, GaAs, and other compound semiconductor materials. These largerband gap devices are often used in higher power and RF devices. Pulsed I-Vmeasurements make it possible to manage or investigate the effects of dispersionduring electrical characterization. Sometimes it is necessary to test devices athigher frequencies in order to simulate the conditions the actual device will

encounter in regular use. Laser diodes and power MOSFETs are two commoncompound semiconductor devices thatoften require pulse I-V measurementsfor characterization. Learn more.

Want to make ultra-fast I-Vmeasurements?

downoa or free ie totra-fat -v appication.



4

Laser diode test conguration


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5/22


Take control of ultra-high speed pulse sourcing

and measurement with the Model 4225-PMU



The Model 4225-PMU Ultra Fast I-V Module is the latest instrumentationoption for the Model 4200-SCS Semiconductor Characterization System.It integrates ultra-fast voltage waveform generation and signal observationcapabilities into the Model 4200-SCSs already powerful test environmentto deliver unprecedented I-V testing performance, expanding the systemsmaterials, device, and process characterization potential dramatically.

Just as important, it makes ultra-fast I-V sourcing and measurementas easy as making DC measurements with a traditional highresolution Source-Measure Unit (SMU).


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6/22

Learn how to determine solar cell efficiency using

the latest electrical characterization techniquesSome of the electrical tests commonly performed on solar cells involvemeasuring current and capacitance as a function of an applied DC voltage.Electrical characterization is important in determining how to make the cellsas efcient as possible with minimal losses. Capacitance measurements aresometimes made as a function of frequency or AC voltage. Some tests requirepulsed current-voltage measurements. These measurements are usually

performed at different light intensities and under different temperatureconditions. A variety of important device parameters can be extractedfrom the DC and pulsed current-voltage (I-V) and capacitance-voltage (C-V)

measurements, including output current, conversionefciency, maximum power output, doping density,resistivity, etc. Learn more.

Discover how to make faster, moreaccurate C-V measurements on solar cells.downoa or appication note.



6

C-V sweep of a silicon solar cell


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7/22


Plug in to greater capacitance-voltage measurement

capabilities with the Model 4210-CVU



Need more details?downoa or appication yer.

The Model 4210-CVU, the Model 4200-SCSs optional capacitance meter,can measure capacitance as a function of an applied DC voltage (C-V), afunction of frequency (C-f), a function of time (C-t), or a function of the

AC voltage. The Model 4210-CVU can also measure conductance andimpedance. The Keithley Test Environment Interactive (KTEI) package

combines nine new solar cell test libraries with

an expanded C-V frequency measurement range,which supports testing at panel LCDs and organicsemiconductors such as organic light-emittingdiodes (OLEDs).


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8/22

Put pulses to work to test high power devices

During high power continuous wave testing, a high power devicessemiconductor material will start to dissipate the applied power. Asthe material in the device heats up, the conduction current decreasesas the carriers have more collisions with the vibrating lattice (phononscattering). Therefore, the measured current will be inaccurately low,

due to joule heating. Because these devices are typically run in pulsedmode, intermittently, or AC rather than continuously, the currents asmeasured with DC techniques wont characterize a devices performanceaccurately. For many high power devices, pulsed I-V testing is necessaryto obtain optimal results. Learn more.

DC and pulse sweepsLearn how to achieve highercurrents with your I-V measurement

hardware. Rea or app note.




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9/22


Get DC and pulsed measurements in the same box with

Series 2600A System SourceMeter instrumentsThe Models 2635Aand 2636Aare both the most sensitive(1fA) and the most powerful (10A pulse) members of theSeries 2600A System SourceMeter family.

n Combines a power supply, true current source, DMM,arbitrary waveform generator, V or I pulse generator

with measurement, electronic load, and triggercontroller all in one instrument

n 20,000 rdgs/sec provides faster test times and abilityto capture transient device behavior

n Precision timing and channel synchronization (


10/22

Characterize your ICs quiescent current

Manufacturers of CMOS integrated circuits must measure theirdevices quiescent or standby power supply current to verifyquality during production testing. This IDDQ testing process involvesmeasuring the current of the VDD power supply while the IC is in

the quiescent state in order to check for shorted gate oxide andother IC defects that may cause a failure over time. Testing must beperformed as quickly as possible to ensure acceptable throughputbut also thoroughly to ensure product performance. Learn more.

Measuring the quiescent current of a single CMOS inverter



Learn more about IDDQ testing.downoa or appication note now!



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11/22


Discover two great choices for applications that demand

tightly coupled sourcing and measurement



The Series 2400 SourceMeter amilyis designed specically for applications thatrequire tightly coupled sourcing and measurement. All SourceMeter models combinea highly stable DC power source and a true instrument-grade 5-digit multimeter withhigh repeatability and low noise.

n The general-purpose Model 2400 (200V, 1A, 20W) is suitable for testing awide variety of devices, including diodes, resistors, resistor networks, activecircuit protection devices, and portable battery-powereddevices and components.

n Choose the Model 2420 (60V, 3A, 60W) for testing higherpower resistors, thermistors, IDDQ, solar cells, batteries, andhigh current or medium power diodes, including switchingand Schottky diodes.


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Model 2400 and 2420 Source and Measure Ranges

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12/22

Explore the attoamp range on single electron devices

Researchers in R&D labs worldwide need ultra-low currentmeasurement capabilities to investigate the properties ofnanoscale components. Measuring currents of 100 attoampsor less is especially challenging: one attoamp (11018A)corresponds to a ow of just six electrons per second. Today,however, it is possible to measure changes in current as small

as one attoamp at room temperature using commerciallyavailable test and measurement equipment. Learn more.

Using a slow staircase input instead of a simple DC signal shows thata discernable signal can be retrieved from the noise. After every 90measurements (about 18 seconds), the current source was incremented by10 attoamps. Inverting the staircase generated the negative source period.


Delve into the latest techniquesfor low current measurements.Rea or artice.




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13/22


Get unmatched measurements with the Model 6430

Sub-Femtoamp Remote SourceMeter instrumentThe Model 6430 Sub-Femtoamp Remote SourceMeter combinesthe sourcing and measurement functions of an SMU with sensitivity,noise, and input resistance superior to electrometers. However, itmakes voltage, current, and resistance measurements at speeds noelectrometer can match. The Model 6430 is equally useful for research

work and for evaluating sophisticated components in test labs.

n 0.4fA p-p (4E16A) noise

n Remote PreAmp can be located at the signal sourceto minimize cable noise

n >1016 inputresistance on

voltagemeasurements




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Model 6430 Capabilities

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14/22

Monitor and control focused ion beam currents

In semiconductor fabrication, focused ion beam systems are often usedfor nanometer-scale imaging, micromachining, and mapping. Carefulmonitoring of the magnitude of the beam current with an ion detector iscritical. The ion detector generates a secondary current thats proportionalto the current of the primary ion beam. When this secondary current ismeasured, it can be used to control the intensity of the primary beam.However, this secondary current is very low, often just a few picoamps, sothe instrumentation measuring it must provide high measurement accuracyand repeatability, as well as sub-picoamp resolution. Learn more.

Focused ion beam system

Discover economical tools for low current and high resistancemeasurements. downoa or picoammeter rochre.

view or low ,Hih Reitance emo.




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15/22


Discover where low cost meets high sensitivity

with Keithley picoammeters




Ca 1-800-492-1955 and

Pre 1 to place an order, or email [email protected].



Contact onine.

Unlike DMMs, picoammeters like the Model 6485 and 6487employ a feedback ammeter design that reduces voltageburden dramatically for better measurement accuracy.

Want to learn more about these instruments?

downoa the Moe 6485 or Moe 6487 ataheet.

The 5-digit Model 6485 Picoammeter combines sensitivecurrent measurements with a robust, cost-effective design. Witheight current measurement ranges and high speed autoranging, itcan measure currents from 20fA to 20mA at up to 1000 readingsper second. Its 10fA resolution and superior sensitivity make it

well suited for characterizing low current phenomena. The Model6487 Picoammeter/Voltage Source adds a high resolution

500V source to the Model 6485s measurement advantages,and provides higher accuracy and faster rise times, as well as adamping function for use with capacitive devices.

Alternating Voltage resistance measurements make itwell suited for characterizing low current devices.

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16/22

Learn about Hall Effect, an essential tool for studying

Graphene-based nano-materials

In order to explore the potential for graphene-based nano-materials and other newmaterials, researchers increasingly turn to Hall Effect measurements. Hall Effectmeasurements are used to determine electrical properties, such as carrier mobility.

With them, researchers are able to analyze quantum Hall Effects on one atom thickgraphene structures.Learn more.



16



Test Setup for Both Hall Effect Measurementsand Transverse Magnetoresistance Measurements

(magnet and cryogenic chamber not shown)


ant to earn more? Learn more about

Hall Effect measurements with our freeonline webinar. view it now!
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17/22


Across a wide range of resistances, choose a Model 6220

or 6221 Current Source and Model 2182A Nanovoltmeter




Ca 1-800-492-1955 and




Contact onine.

The 622X/2182A combination makes itsimple to perform, analyze, and displaydifferential conductance measurements.

downoa the Moe 6220/6221 or

Moe 2182 ataheet.

AModel 6220 or6221 Precision Current Source, combined with theModel 2182A Nanovoltmeter, is the industrys most sensitive solutionfor making Hall Effect measurements at various ranges of resistances. TheModel 622X and Model 2182A are easy to use because the combinationcan be treated as a single instrument. Their simple connections eliminatethe isolation and noise current problems that plague other solutions.

And the second channel in the Model 2182 can be used to measure

temperature. Furthermore this same combination ofinstruments along with Keithleys low level switching capabilitycan also perform van der Pauw resistivity measurements andmagnetoresistance studies. Read our white paper on hownewinstruments can lock out lock-in amplifers.

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18/22

Explore the electrical characteristics of small crystals

Many materials researchers need to characterize the electrical propertiesof crystalline materials, such as their (anisotropic) conductivity andphotoconductivity, as well as the temperature dependencies associated withthese properties. Small crystals grown using a number of techniques canexhibit resistances as high as 1017, which must be measured in a specially

designed measurement chamber, as well as in a Molecular Beam Deposition(MBD) system that allows making in-situ measurements during crystal orlm growth. Learn more.

In this system congured for photocurrent measurements,the sample and the cable to the electrometer input aresurrounded by a conductor at the same potential (guard)to prevent leakage currents.

Want to learn more? Discover how to make high resistancemeasurements on small crystals in inert gas or high vacuum byreading our onine appication note. downoa yor copy now.



18



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19/22


Find the answers you need with the Model 6517B

Electrometer/High Resistance Meter



ternatin Poarity Metho forMearin Reitiity

The Model 6517B employs the Alternating Polarity method to measure high levelsof volume or surface resistivity, virtually eliminating the effect of any backgroundcurrents in the sample. When used with the optional Model 6524 software, users cansee the actual current waveform that results from the applied Alternating Polarity DCvoltage (the square wave). Users can easily determine whether the parameters usedare appropriate for the material or device under test.

The 5-digit Model 6517B offers accuracy and sensitivity specicationsunmatched by any other meter of this type. A variety of features andoptions simplify measuring resistances as high as 1017, as well as volumeand surface resistivity. With measurement speeds up to 425 readings/second, its also signicantly faster than competitive electrometers.

n Current measurements from 1fA to 20mA

n

Voltage measurements from 10V to 200Vn Resistance measurements

from 50 to 1016

n Charge measurements from10fC to 2C


Ca 1-800-492-1955 and




Contact onine.

Need more detail?downoa the Moe 6517b ataheet.

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20/22

Improving high-brightness LED test efficiency

Advances in the performance of v isible light emitting diodes(LEDs) are opening the door to a growing list of applications.More than ever, cost-effective testing methods are neededto ensure the reliability and quality of these devices. LEDtesting involves different types of test sequences at variousstages of development and production. This application noteprovides solid information on the ingredients for various

testing recipes, including how to probe for the diodescharacteristics and examples of test setups. It also outlines howto achieve throughput advantages using new test techniques andinstruments. Learn more.

Learn how to test LEDs byownoain or free appication note.



20

Block diagram of a Model 2602ASourceMeter-based single LED test system.For testing multiple LEDs, the Model 3706

System Switch/Multimeter is added.

Learn more about the speed vs. accuracy trade-offs involved

in making multi-channel measurements with a digitalmultimeter (DMM) and relay switching. view the weinar.


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21/22


Get high speed switching and high performance

measurements all in one enclosure




Ca 1-800-492-1955 andPre 1 to place an order, or email [email protected].



Contact onine.

Need more details?downoa or ataheet.

The six-slot Series 3700 System Switch/Multimeter offers theaccuracy and exibility of instrument-grade switching integrated

with low-noise, high performance multimeter measurements. Theoptional multimeter supports 13 built-in measurement functions,including both two- and four-wire ohms measurements, as well asextended low ohms (1) and low current (10A) ranges.

n LXI Class B compliance with IEEE 1588 time synchronization

n Flexible resolution from 7 to 3 digits

n Well-suited for a wide range of research and productdevelopment applications

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22/22

Consult with a Keithley applications engineer and learn how to get themost from your Keithley products

WORLDWIDE HEADQUARTERS EUROPE Within the USA:1-888-534-8453 Germany: (+49) 89 849 307 40Outside the USA: + 1-440-248-0400 Great Britain: (+44) 118 929 7500

Email:[email protected] contact information at www.keithley.com

ASIA China: (+86) 10 822 55 011Japan: (+81) 3 5733 7555

Korea: (+82) 2 574 7778 Taiwan: (+886) 3 572 9077

Contact US:

Contact us by phone, fax, mail, or email

KEITHLEy CORPORATE HEADQUARTERS

Keithley Instruments, Inc.28775 Aurora RoadCleveland, Ohio 44139

Phone: 440-248-0400

Toll-free: 800-552-1115Fax: 440-248-6168

[email protected]

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khly rum, . n 28775 aurora rd . n cleVeland, oh 44139-1891 n 440-248-0400 n fx: 440-248-6168 n 1-888-keithley n www..m

Blgumint-Pietes-leeP: 02-3630040ax: [email protected]

hBeijinP: 86-10-8447-5556ax: [email protected] .cn

raint-binP: 01-64532020ax: [email protected]

grmygeeinP: 089-84930740ax: [email protected]. eit e. e

dBanaoeP: 080-26771071,-72, -73ax: [email protected] ite .co

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Documents

Measuring New Device Materials