Embed Size (px)
Citation preview
MEMS Fabrication Blog 2015
Page 1
Rochester Institute of TechnologyMicroelectronic Engineering
ROCHESTER INSTITUTE OF TECHNOLOGYMICROELECTRONIC ENGINEERING
Surface MEMS Fabrication Blog
Dr. Lynn Fuller, Adam Wardas Webpage: http://people.rit.edu/lffeee
Microelectronic Engineering Rochester Institute of Technology
82 Lomb Memorial Drive Rochester, NY 14623-5604
Tel (585) 475-2035 Email: [email protected]
Department webpage: http://www.microe.rit.edu
10-18-2015 MEMS_Fabrication_Blog_2015.ppt
MEMS Fabrication Blog 2015
Page 2
Rochester Institute of TechnologyMicroelectronic Engineering
INTRODUCTION
This document is a blog addressing the fabrication and testing of the MEMS wafers that were made as part of the MCEE770 MEMS Fabrication class. The students in the class provided individual design layouts that were merged into a single project chip design used to create the reticles for this project. Other documents provide details addressing the design, layout and fabrication for this project.
MEMS Fabrication Blog 2015
Page 3
Rochester Institute of TechnologyMicroelectronic Engineering
SURFACE MEMS 2015 PROCESS
1. Starting wafer2. PH03 – level 0, Marks3. ET29 – Zero Etch4. ID01-Scribe Wafer ID, D1…5. ET07 – Resist Strip, Recipe FF6. CL01 – RCA clean7. OX04 – 6500Å Oxide Tube 18. CV01 – LPCVD Poly 5000Å9. IM01 – Implant P31, 2E16, 60KeV10. PH03 – level 1 Poly-111. ET08 – Poly Etch12. ET07 – Resist Strip, Recipe FF13. CL01- RCA Clean 14. CV03 – OX05 700Å Dry Oxide15. CV02- LPCVD Nitride 4000Å16. PH03 – level 2 Anchor17. ET29 – Etch Nitride18. ET07 - Resist Strip, Recipe FF19. CL01 – RCA Clean20. CV03-TEOS SacOx Dep 1.75um
21. PH03 – level 3 SacOx Define22. ET06 - wet etch SacOx Define Etch23. ET07- Resist Strip, Recipe FF24. CL01 – RCA Clean25. CV01-LPCVD Poly 2um, 140 min26. PH03 - level 4 No Implant27. IM01-P31 2E16 100KeV28. ET07 Resist Strip, Recipe FF29. OX04-Anneal Recipe 11930. DE01 Four Point Probe31. PH03 - level 5 Poly232. ET68 - STS Etch33. ET07 - Resist Strip, Recipe FF34. CV02 – LPCVD Nitride 4000Å35. PH03 – level 6 Contact Cut36. ET29 – Etch Contact Cut37. ET06 – Etch Oxide38. ET07 – Resist Strip, Recipe FF39. CL01 – RCA Clean40. ME01 – Metal Deposition - Al
41. PH03 – level 7 Metal42. ET55 – Metal Etch - wet43. ET07 – Resist Strip44. PH03 – level 8 – Final SacOx45. ET66 – Final SacOx Etch46. ET07 - Resist Strip, Recipe FF47. SEM1 – Pictures48. TE01 - Testing
9-1-15
Etch ratesLPCVD Si3N4 in 5:1 BHF 120Å/minN+Poly in BHF 50Å/minPECVD SiO2 in 5:1 BHF 2000Å/min
MEMS Fabrication Blog 2015
Page 4
Rochester Institute of TechnologyMicroelectronic Engineering
ZERO ETCH AND PHOTORESIST STRIP
Etch Silicon using Drytek Quad 482 Etcher – Cleaning of chamber for 5 min. in 02 plasma Etching the device wafer for 2 min. in CF4, CHF3 and O2 plasmaInspection of alignment marks on waferRemoval of Photoresist using GaSonics - (recipe FF)Microscope images of alignment marks before and after P.R. removal
October 19, 2015Authors: Abhinav, Nikhil, Ranjana, Shruthi, Yamini
Before P.R. removal
Today’s Goal: Coat the wafers with photoresist, expose with ASML stepper, develop and plasma etch ASML alignment marks on six wafers.
After P.R. removal
Drytek Quad GaSonics PR Asher
MEMS Fabrication Blog 2015
Page 5
Rochester Institute of TechnologyMicroelectronic Engineering
TITLE
This is a template for submitting pages to this blogDuplicate or copy this pageChange the title above… use all capital lettersChange Today’s GoalChange the dateChange the names in the Authors boxMove these text boxes around as neededChange size of text boxesEtc.
October xx, 2015Authors: Dr. Fuller, Adam Wardas
More informationData and MeasurementsPictures, especially of students in the labPictures of wafer seen through microscopePictures of tools usedMovies if really short and interesting
Picture caption
Today’s Goal: Write a sentence or two that describes what is being done. The audience is students at other universities interested in MEMS.
