Advanced WLP Platformfor High -Performance MEMS

11

Presented by Dean SpicerDirector of Engineering

May 11th 2016

1 Application Drivers for High Performance MEMS Sensors

2 Approaches to Achieving High Performance

3 Discrete Packaging

4 Wafer Level Packaging

Outline

2

4 Wafer Level Packaging

5 Advanced Wafer Level Packaging - MicraSilQTM

1 A particular subset of accelerometer designs need Advanced Wafer Level Packaging with the MEMS device sealed in high vacuumraquo Low noise high sensitivity

Application Drivers for High Performance MEMS

3

1 Low Noise amp High Sensitivity Closed loop configuration

2 Signal from the sensor is the amplitude of the feedback necessary to keep the MEMS

Closed Loop OperationMicromachined High Resolution Accelerometer Krishnan et al Journal of Indian Institute of Science Vol 873

4

mass from moving relative to the input acceleration on the device

3 Improved linearity and range due to very small motion of the MEMS mass

4 Bandwidth of the system increases by a factor equal to the loop gain

5 High SNR elimination of squeeze film damping reduction of Brownian noise

Brownian Noise

bull The mass-spring system is in contact with a thermal bath at temperature T

bull Thermal energy enters from the bath and is dissipated by oscillator motion

bull This motion represents the thermal noise floor of

T

Noise due to the impact of gaseous molecules with the MEMS mass

Micromachined High Resolution Accelerometer Krishnan et al Journal of Indian Institute of Science Vol 873

5

the sensor

mQ

Tk

f

A Brmsnoise 04 ω=∆

Noise floor falls with lowered resonant frequency increased proof mass and increased Q-factor

Noise - want this to be small

m

k=0 Where ωb

mQ 0ω=

Q Factor and NoiseWhat does this mean for the noise limit of high performance accelerometers

bull m = 1 mg

bull ω0

= 4000 rads (~640 Hz)bull Q ~ 50000

mQ

Tk

f

A Brmsnoise 04 ω=∆

100

150

200

250

300

No

ise

(n

g

sqrt

(Hz)

100

150

200

250

300

No

ise

(n

g

sqrt

(Hz)

6

0

50

100

0 20000 40000 60000 80000 100000

No

ise

(n

g

sqrt

(Hz)

Q

0

50

0 2 4 6 8 10

No

ise

(n

g

sqrt

(Hz)

Pressure (Pa)

High performance (low noise) MEMS using discrete packaging

raquo Ceramic package with hermetically sealed lidbull High vacuum MEMS environmentbull Wide seal ring with high temperature solder (AuSn) or glass fritbull Getter can be incorporated into the package to ensure performance over

the lifetime of the product

Discrete Packaging for MEMS

7

raquo Disadvantagesbull Cost - associated die level processing can be gt50 of the total device costbull Difficult to scalebull Bulky package consumes valuable board real estate

httpglobalkyoceracomprdctsemiconsemicomposensor_phtml

1 Standard WLPraquo Wafer bondingraquo Device protection some level of hermeticityraquo Electrical connections often done using exposed lateral bondpad strategyraquo Two stage sawing to expose bond pads then singulateraquo Still requires die level processing (attach wirebonding)

Wafer Level Packaging Approaches

8

Cap

MEMS layer

Side electrical feed through

Base wafer

Hermetic seal

Lid Wafer

Device Wafer

Getter

Metal for In-process Test

Au-Si Eutectic Bond

Comb Structures

Advanced Wafer Level Package ndash MicraSilQ trade

60 microm

Developed by Micralyne and implemented on a customer design as a next generation solution to remove ceramic package

9

Base Wafer

Comb Structures

Cavity Bumps

Polysilicon Filled Vias

Under Bump Metallization

Lead-free Solder

Advanced Wafer Level Packaging

StandardWLP

AdvancedWLP - MicraSilQ TM

Protection of MEMS device

Yes Yes

Decreased die level processing

Yes Yes

10

processing

Electrical connection to MEMS

Lateral feed through with wirebond

Vias with BGAs

Vacuum level ~20 Pa (150 mTorr) lt05 Pa (4 mTorr)

Hermeticity Unknown

Examination of Key Packaging Metrics of a Hermetically sealed MEMS Accerometer Krabbe et al IWLPC Nov 2013

In the past ndash chips made by fabs packaging done by packaging house

Subtle Advantages of Advanced WLP

1 Advanced Wafer Level Packaging can skip the need for a separate supplier of packaging services

2 Easier to solve problems that have interactions between

11

2 Easier to solve problems that have interactions between MEMS fabrication and the packaging process

3 With separate suppliers more effort is put into establishing who owns the problem than in actually solving it

bull Hermeticity of the bonding technologies is key to fabricating a MEMS inertial sensor capable of high Q factors

bull Bottom wafers are fusion bonded

bullTop wafer is bonded by the formation of Gold-Silicon Eutectic above 363ordmC

Three Functional Silicon Layers ndash Two Bonds

DSID-0C0903A9

12

bull Exact bond parameters are critical to the success of the bond and the ultimate performance of the device

bull vacuum levelbull temperature profile

bull Typical bond line is ~100 microm (compare to 500 microm ndash 1500 microm for solder seal of ceramic package)

DSID-0C0903A9

Lid

Device

Base400 microm

60 microm

500 microm

ldquoVia Firstrdquo process

Through Silicon Via Details

13

Key TSV characteristicsraquo Doped poly-Si fill materialraquo 400 micromraquo gt100 MΩ isolation from the substrateraquo lt5 pF parasitic capacitance raquo TSV resistivity lt 4 mΩcmraquo lt 10Ω via resistance UBM and BGA

Lid

Device

Base

Integrated Getter Cavity Design

DSID-0C0903A9

Lid Wafer

Device Wafer 60 microm

500 microm

10 microm gap

50 microm gap

Patternable Getter (2um)

14

Base Wafer

400 microm

20 microm gap

bull Getter is deposited on the lid wafer prior to bonding

bull Cavity around the MEMS can be designed with bump stops

bull AlSi metallization for backside metal traces (allows for re-distribution of the contacts)bull Passivation layer for damage protection and electrical isolation

bull Under bump metallization (UBM) suitable for lead free solder ballsbull SAC 405 solder balls (035 mm diameter)bull Solder balls are placed and then reflowedbull Ball attached yield of 999 across wafer

Backside Metallization and UBM

15

bull Ball attached yield of 999 across wafer

bull Singulated chip is ready for direct attachment to boardbull UBM optimized to ensure reliable attachment to FR4

MicraSilQ trade

Wafer Level Packaging Platform

bull gt 50 Reduced cost through elimination of external packaging

bull Established process for fast ramp to manufacturing Accelerometer Gyroscope

16

bull Simple board reflow mounting

bull Custom device layer for your unique application

Design Kit Available

Through Silicon Via

(TSV)

Lead free solder

1 Thinner dieraquo Thinning of lid wafer straight forwardraquo Thinning of base wafer requires development

2 Thicker Device Layer raquo Allows increased mass of the MEMS

(therefore lower noise floor)

Next Steps for MicraSilQ TM

Lid

Device

400 microm

60 microm

500 microm

17

3 Vias with metal fillraquo Requires developmentraquo Via material would have to survive the

eutectic bond process

Base400 microm

Micralyne Consolidated Overviewbull Founded 1982 (privatized 1998)bull Headquartered in Edmonton

Alberta CAbull Facilities 55000 Sq Ft (5000m2)

bull MEMS Fab Test Metrology Packaging Administration

bull 6rdquo (150mm) Wafer Productionbull Capacity variable based on mix

bull 5K ndash 10K wafers per month based on 5 layer process

bull ISO 9001 and ISO 13485 certified

bull Core Capabilitiesbull MEMS and Micro-fabrication on

Silicon Glass Quartz and other base wafer materials

bull MEMS Process and Micro Structure IP bull More than 30 years of micro and nano

manufacturing ldquoknow howrdquo

bull Focus Marketsbull Industrial Sensorsbull Bio and Medical Sensors

18

bull ISO 9001 and ISO 13485 certifiedbull 83 Employeesbull Customers

bull Fortune 500 System OEMs bull Fabless MEMS Product Companiesbull Medical Optical and Industrial Device

Companies

bull Bio and Medical Sensorsbull Optical Communications

bull Engagement Modelbull Engineering Services

bull Process Design and Process Integrationbull Modeling and Analysis

bull Manufacturing Servicesbull Proof of Concept and Prototypebull Volume Wafer Productionbull Backend Packaging and Test

18

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830

1 Application Drivers for High Performance MEMS Sensors

2 Approaches to Achieving High Performance

3 Discrete Packaging

4 Wafer Level Packaging

Outline

2

4 Wafer Level Packaging

5 Advanced Wafer Level Packaging - MicraSilQTM

1 A particular subset of accelerometer designs need Advanced Wafer Level Packaging with the MEMS device sealed in high vacuumraquo Low noise high sensitivity

Application Drivers for High Performance MEMS

3

1 Low Noise amp High Sensitivity Closed loop configuration

2 Signal from the sensor is the amplitude of the feedback necessary to keep the MEMS

Closed Loop OperationMicromachined High Resolution Accelerometer Krishnan et al Journal of Indian Institute of Science Vol 873

4

mass from moving relative to the input acceleration on the device

3 Improved linearity and range due to very small motion of the MEMS mass

4 Bandwidth of the system increases by a factor equal to the loop gain

5 High SNR elimination of squeeze film damping reduction of Brownian noise

Brownian Noise

bull The mass-spring system is in contact with a thermal bath at temperature T

bull Thermal energy enters from the bath and is dissipated by oscillator motion

bull This motion represents the thermal noise floor of

T

Noise due to the impact of gaseous molecules with the MEMS mass

Micromachined High Resolution Accelerometer Krishnan et al Journal of Indian Institute of Science Vol 873

5

the sensor

mQ

Tk

f

A Brmsnoise 04 ω=∆

Noise floor falls with lowered resonant frequency increased proof mass and increased Q-factor

Noise - want this to be small

m

k=0 Where ωb

mQ 0ω=

Q Factor and NoiseWhat does this mean for the noise limit of high performance accelerometers

bull m = 1 mg

bull ω0

= 4000 rads (~640 Hz)bull Q ~ 50000

mQ

Tk

f

A Brmsnoise 04 ω=∆

100

150

200

250

300

No

ise

(n

g

sqrt

(Hz)

100

150

200

250

300

No

ise

(n

g

sqrt

(Hz)

6

0

50

100

0 20000 40000 60000 80000 100000

No

ise

(n

g

sqrt

(Hz)

Q

0

50

0 2 4 6 8 10

No

ise

(n

g

sqrt

(Hz)

Pressure (Pa)

High performance (low noise) MEMS using discrete packaging

raquo Ceramic package with hermetically sealed lidbull High vacuum MEMS environmentbull Wide seal ring with high temperature solder (AuSn) or glass fritbull Getter can be incorporated into the package to ensure performance over

the lifetime of the product

Discrete Packaging for MEMS

7

raquo Disadvantagesbull Cost - associated die level processing can be gt50 of the total device costbull Difficult to scalebull Bulky package consumes valuable board real estate

httpglobalkyoceracomprdctsemiconsemicomposensor_phtml

1 Standard WLPraquo Wafer bondingraquo Device protection some level of hermeticityraquo Electrical connections often done using exposed lateral bondpad strategyraquo Two stage sawing to expose bond pads then singulateraquo Still requires die level processing (attach wirebonding)

Wafer Level Packaging Approaches

8

Cap

MEMS layer

Side electrical feed through

Base wafer

Hermetic seal

Lid Wafer

Device Wafer

Getter

Metal for In-process Test

Au-Si Eutectic Bond

Comb Structures

Advanced Wafer Level Package ndash MicraSilQ trade

60 microm

Developed by Micralyne and implemented on a customer design as a next generation solution to remove ceramic package

9

Base Wafer

Comb Structures

Cavity Bumps

Polysilicon Filled Vias

Under Bump Metallization

Lead-free Solder

Advanced Wafer Level Packaging

StandardWLP

AdvancedWLP - MicraSilQ TM

Protection of MEMS device

Yes Yes

Decreased die level processing

Yes Yes

10

processing

Electrical connection to MEMS

Lateral feed through with wirebond

Vias with BGAs

Vacuum level ~20 Pa (150 mTorr) lt05 Pa (4 mTorr)

Hermeticity Unknown

Examination of Key Packaging Metrics of a Hermetically sealed MEMS Accerometer Krabbe et al IWLPC Nov 2013

In the past ndash chips made by fabs packaging done by packaging house

Subtle Advantages of Advanced WLP

1 Advanced Wafer Level Packaging can skip the need for a separate supplier of packaging services

2 Easier to solve problems that have interactions between

11

2 Easier to solve problems that have interactions between MEMS fabrication and the packaging process

3 With separate suppliers more effort is put into establishing who owns the problem than in actually solving it

bull Hermeticity of the bonding technologies is key to fabricating a MEMS inertial sensor capable of high Q factors

bull Bottom wafers are fusion bonded

bullTop wafer is bonded by the formation of Gold-Silicon Eutectic above 363ordmC

Three Functional Silicon Layers ndash Two Bonds

DSID-0C0903A9

12

bull Exact bond parameters are critical to the success of the bond and the ultimate performance of the device

bull vacuum levelbull temperature profile

bull Typical bond line is ~100 microm (compare to 500 microm ndash 1500 microm for solder seal of ceramic package)

DSID-0C0903A9

Lid

Device

Base400 microm

60 microm

500 microm

ldquoVia Firstrdquo process

Through Silicon Via Details

13

Key TSV characteristicsraquo Doped poly-Si fill materialraquo 400 micromraquo gt100 MΩ isolation from the substrateraquo lt5 pF parasitic capacitance raquo TSV resistivity lt 4 mΩcmraquo lt 10Ω via resistance UBM and BGA

Lid

Device

Base

Integrated Getter Cavity Design

DSID-0C0903A9

Lid Wafer

Device Wafer 60 microm

500 microm

10 microm gap

50 microm gap

Patternable Getter (2um)

14

Base Wafer

400 microm

20 microm gap

bull Getter is deposited on the lid wafer prior to bonding

bull Cavity around the MEMS can be designed with bump stops

bull AlSi metallization for backside metal traces (allows for re-distribution of the contacts)bull Passivation layer for damage protection and electrical isolation

bull Under bump metallization (UBM) suitable for lead free solder ballsbull SAC 405 solder balls (035 mm diameter)bull Solder balls are placed and then reflowedbull Ball attached yield of 999 across wafer

Backside Metallization and UBM

15

bull Ball attached yield of 999 across wafer

bull Singulated chip is ready for direct attachment to boardbull UBM optimized to ensure reliable attachment to FR4

MicraSilQ trade

Wafer Level Packaging Platform

bull gt 50 Reduced cost through elimination of external packaging

bull Established process for fast ramp to manufacturing Accelerometer Gyroscope

16

bull Simple board reflow mounting

bull Custom device layer for your unique application

Design Kit Available

Through Silicon Via

(TSV)

Lead free solder

1 Thinner dieraquo Thinning of lid wafer straight forwardraquo Thinning of base wafer requires development

2 Thicker Device Layer raquo Allows increased mass of the MEMS

(therefore lower noise floor)

Next Steps for MicraSilQ TM

Lid

Device

400 microm

60 microm

500 microm

17

3 Vias with metal fillraquo Requires developmentraquo Via material would have to survive the

eutectic bond process

Base400 microm

Micralyne Consolidated Overviewbull Founded 1982 (privatized 1998)bull Headquartered in Edmonton

Alberta CAbull Facilities 55000 Sq Ft (5000m2)

bull MEMS Fab Test Metrology Packaging Administration

bull 6rdquo (150mm) Wafer Productionbull Capacity variable based on mix

bull 5K ndash 10K wafers per month based on 5 layer process

bull ISO 9001 and ISO 13485 certified

bull Core Capabilitiesbull MEMS and Micro-fabrication on

Silicon Glass Quartz and other base wafer materials

bull MEMS Process and Micro Structure IP bull More than 30 years of micro and nano

manufacturing ldquoknow howrdquo

bull Focus Marketsbull Industrial Sensorsbull Bio and Medical Sensors

18

bull ISO 9001 and ISO 13485 certifiedbull 83 Employeesbull Customers

bull Fortune 500 System OEMs bull Fabless MEMS Product Companiesbull Medical Optical and Industrial Device

Companies

bull Bio and Medical Sensorsbull Optical Communications

bull Engagement Modelbull Engineering Services

bull Process Design and Process Integrationbull Modeling and Analysis

bull Manufacturing Servicesbull Proof of Concept and Prototypebull Volume Wafer Productionbull Backend Packaging and Test

18

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830

1 A particular subset of accelerometer designs need Advanced Wafer Level Packaging with the MEMS device sealed in high vacuumraquo Low noise high sensitivity

Application Drivers for High Performance MEMS

3

1 Low Noise amp High Sensitivity Closed loop configuration

2 Signal from the sensor is the amplitude of the feedback necessary to keep the MEMS

Closed Loop OperationMicromachined High Resolution Accelerometer Krishnan et al Journal of Indian Institute of Science Vol 873

4

mass from moving relative to the input acceleration on the device

3 Improved linearity and range due to very small motion of the MEMS mass

4 Bandwidth of the system increases by a factor equal to the loop gain

5 High SNR elimination of squeeze film damping reduction of Brownian noise

Brownian Noise

bull The mass-spring system is in contact with a thermal bath at temperature T

bull Thermal energy enters from the bath and is dissipated by oscillator motion

bull This motion represents the thermal noise floor of

T

Noise due to the impact of gaseous molecules with the MEMS mass

Micromachined High Resolution Accelerometer Krishnan et al Journal of Indian Institute of Science Vol 873

5

the sensor

mQ

Tk

f

A Brmsnoise 04 ω=∆

Noise floor falls with lowered resonant frequency increased proof mass and increased Q-factor

Noise - want this to be small

m

k=0 Where ωb

mQ 0ω=

Q Factor and NoiseWhat does this mean for the noise limit of high performance accelerometers

bull m = 1 mg

bull ω0

= 4000 rads (~640 Hz)bull Q ~ 50000

mQ

Tk

f

A Brmsnoise 04 ω=∆

100

150

200

250

300

No

ise

(n

g

sqrt

(Hz)

100

150

200

250

300

No

ise

(n

g

sqrt

(Hz)

6

0

50

100

0 20000 40000 60000 80000 100000

No

ise

(n

g

sqrt

(Hz)

Q

0

50

0 2 4 6 8 10

No

ise

(n

g

sqrt

(Hz)

Pressure (Pa)

High performance (low noise) MEMS using discrete packaging

raquo Ceramic package with hermetically sealed lidbull High vacuum MEMS environmentbull Wide seal ring with high temperature solder (AuSn) or glass fritbull Getter can be incorporated into the package to ensure performance over

the lifetime of the product

Discrete Packaging for MEMS

7

raquo Disadvantagesbull Cost - associated die level processing can be gt50 of the total device costbull Difficult to scalebull Bulky package consumes valuable board real estate

httpglobalkyoceracomprdctsemiconsemicomposensor_phtml

1 Standard WLPraquo Wafer bondingraquo Device protection some level of hermeticityraquo Electrical connections often done using exposed lateral bondpad strategyraquo Two stage sawing to expose bond pads then singulateraquo Still requires die level processing (attach wirebonding)

Wafer Level Packaging Approaches

8

Cap

MEMS layer

Side electrical feed through

Base wafer

Hermetic seal

Lid Wafer

Device Wafer

Getter

Metal for In-process Test

Au-Si Eutectic Bond

Comb Structures

Advanced Wafer Level Package ndash MicraSilQ trade

60 microm

Developed by Micralyne and implemented on a customer design as a next generation solution to remove ceramic package

9

Base Wafer

Comb Structures

Cavity Bumps

Polysilicon Filled Vias

Under Bump Metallization

Lead-free Solder

Advanced Wafer Level Packaging

StandardWLP

AdvancedWLP - MicraSilQ TM

Protection of MEMS device

Yes Yes

Decreased die level processing

Yes Yes

10

processing

Electrical connection to MEMS

Lateral feed through with wirebond

Vias with BGAs

Vacuum level ~20 Pa (150 mTorr) lt05 Pa (4 mTorr)

Hermeticity Unknown

Examination of Key Packaging Metrics of a Hermetically sealed MEMS Accerometer Krabbe et al IWLPC Nov 2013

In the past ndash chips made by fabs packaging done by packaging house

Subtle Advantages of Advanced WLP

1 Advanced Wafer Level Packaging can skip the need for a separate supplier of packaging services

2 Easier to solve problems that have interactions between

11

2 Easier to solve problems that have interactions between MEMS fabrication and the packaging process

3 With separate suppliers more effort is put into establishing who owns the problem than in actually solving it

bull Hermeticity of the bonding technologies is key to fabricating a MEMS inertial sensor capable of high Q factors

bull Bottom wafers are fusion bonded

bullTop wafer is bonded by the formation of Gold-Silicon Eutectic above 363ordmC

Three Functional Silicon Layers ndash Two Bonds

DSID-0C0903A9

12

bull Exact bond parameters are critical to the success of the bond and the ultimate performance of the device

bull vacuum levelbull temperature profile

bull Typical bond line is ~100 microm (compare to 500 microm ndash 1500 microm for solder seal of ceramic package)

DSID-0C0903A9

Lid

Device

Base400 microm

60 microm

500 microm

ldquoVia Firstrdquo process

Through Silicon Via Details

13

Key TSV characteristicsraquo Doped poly-Si fill materialraquo 400 micromraquo gt100 MΩ isolation from the substrateraquo lt5 pF parasitic capacitance raquo TSV resistivity lt 4 mΩcmraquo lt 10Ω via resistance UBM and BGA

Lid

Device

Base

Integrated Getter Cavity Design

DSID-0C0903A9

Lid Wafer

Device Wafer 60 microm

500 microm

10 microm gap

50 microm gap

Patternable Getter (2um)

14

Base Wafer

400 microm

20 microm gap

bull Getter is deposited on the lid wafer prior to bonding

bull Cavity around the MEMS can be designed with bump stops

bull AlSi metallization for backside metal traces (allows for re-distribution of the contacts)bull Passivation layer for damage protection and electrical isolation

bull Under bump metallization (UBM) suitable for lead free solder ballsbull SAC 405 solder balls (035 mm diameter)bull Solder balls are placed and then reflowedbull Ball attached yield of 999 across wafer

Backside Metallization and UBM

15

bull Ball attached yield of 999 across wafer

bull Singulated chip is ready for direct attachment to boardbull UBM optimized to ensure reliable attachment to FR4

MicraSilQ trade

Wafer Level Packaging Platform

bull gt 50 Reduced cost through elimination of external packaging

bull Established process for fast ramp to manufacturing Accelerometer Gyroscope

16

bull Simple board reflow mounting

bull Custom device layer for your unique application

Design Kit Available

Through Silicon Via

(TSV)

Lead free solder

1 Thinner dieraquo Thinning of lid wafer straight forwardraquo Thinning of base wafer requires development

2 Thicker Device Layer raquo Allows increased mass of the MEMS

(therefore lower noise floor)

Next Steps for MicraSilQ TM

Lid

Device

400 microm

60 microm

500 microm

17

3 Vias with metal fillraquo Requires developmentraquo Via material would have to survive the

eutectic bond process

Base400 microm

Micralyne Consolidated Overviewbull Founded 1982 (privatized 1998)bull Headquartered in Edmonton

Alberta CAbull Facilities 55000 Sq Ft (5000m2)

bull MEMS Fab Test Metrology Packaging Administration

bull 6rdquo (150mm) Wafer Productionbull Capacity variable based on mix

bull 5K ndash 10K wafers per month based on 5 layer process

bull ISO 9001 and ISO 13485 certified

bull Core Capabilitiesbull MEMS and Micro-fabrication on

Silicon Glass Quartz and other base wafer materials

bull MEMS Process and Micro Structure IP bull More than 30 years of micro and nano

manufacturing ldquoknow howrdquo

bull Focus Marketsbull Industrial Sensorsbull Bio and Medical Sensors

18

bull ISO 9001 and ISO 13485 certifiedbull 83 Employeesbull Customers

bull Fortune 500 System OEMs bull Fabless MEMS Product Companiesbull Medical Optical and Industrial Device

Companies

bull Bio and Medical Sensorsbull Optical Communications

bull Engagement Modelbull Engineering Services

bull Process Design and Process Integrationbull Modeling and Analysis

bull Manufacturing Servicesbull Proof of Concept and Prototypebull Volume Wafer Productionbull Backend Packaging and Test

18

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830

1 Low Noise amp High Sensitivity Closed loop configuration

2 Signal from the sensor is the amplitude of the feedback necessary to keep the MEMS

Closed Loop OperationMicromachined High Resolution Accelerometer Krishnan et al Journal of Indian Institute of Science Vol 873

4

mass from moving relative to the input acceleration on the device

3 Improved linearity and range due to very small motion of the MEMS mass

4 Bandwidth of the system increases by a factor equal to the loop gain

5 High SNR elimination of squeeze film damping reduction of Brownian noise

Brownian Noise

bull The mass-spring system is in contact with a thermal bath at temperature T

bull Thermal energy enters from the bath and is dissipated by oscillator motion

bull This motion represents the thermal noise floor of

T

Noise due to the impact of gaseous molecules with the MEMS mass

Micromachined High Resolution Accelerometer Krishnan et al Journal of Indian Institute of Science Vol 873

5

the sensor

mQ

Tk

f

A Brmsnoise 04 ω=∆

Noise floor falls with lowered resonant frequency increased proof mass and increased Q-factor

Noise - want this to be small

m

k=0 Where ωb

mQ 0ω=

Q Factor and NoiseWhat does this mean for the noise limit of high performance accelerometers

bull m = 1 mg

bull ω0

= 4000 rads (~640 Hz)bull Q ~ 50000

mQ

Tk

f

A Brmsnoise 04 ω=∆

100

150

200

250

300

No

ise

(n

g

sqrt

(Hz)

100

150

200

250

300

No

ise

(n

g

sqrt

(Hz)

6

0

50

100

0 20000 40000 60000 80000 100000

No

ise

(n

g

sqrt

(Hz)

Q

0

50

0 2 4 6 8 10

No

ise

(n

g

sqrt

(Hz)

Pressure (Pa)

High performance (low noise) MEMS using discrete packaging

raquo Ceramic package with hermetically sealed lidbull High vacuum MEMS environmentbull Wide seal ring with high temperature solder (AuSn) or glass fritbull Getter can be incorporated into the package to ensure performance over

the lifetime of the product

Discrete Packaging for MEMS

7

raquo Disadvantagesbull Cost - associated die level processing can be gt50 of the total device costbull Difficult to scalebull Bulky package consumes valuable board real estate

httpglobalkyoceracomprdctsemiconsemicomposensor_phtml

1 Standard WLPraquo Wafer bondingraquo Device protection some level of hermeticityraquo Electrical connections often done using exposed lateral bondpad strategyraquo Two stage sawing to expose bond pads then singulateraquo Still requires die level processing (attach wirebonding)

Wafer Level Packaging Approaches

8

Cap

MEMS layer

Side electrical feed through

Base wafer

Hermetic seal

Lid Wafer

Device Wafer

Getter

Metal for In-process Test

Au-Si Eutectic Bond

Comb Structures

Advanced Wafer Level Package ndash MicraSilQ trade

60 microm

Developed by Micralyne and implemented on a customer design as a next generation solution to remove ceramic package

9

Base Wafer

Comb Structures

Cavity Bumps

Polysilicon Filled Vias

Under Bump Metallization

Lead-free Solder

Advanced Wafer Level Packaging

StandardWLP

AdvancedWLP - MicraSilQ TM

Protection of MEMS device

Yes Yes

Decreased die level processing

Yes Yes

10

processing

Electrical connection to MEMS

Lateral feed through with wirebond

Vias with BGAs

Vacuum level ~20 Pa (150 mTorr) lt05 Pa (4 mTorr)

Hermeticity Unknown

Examination of Key Packaging Metrics of a Hermetically sealed MEMS Accerometer Krabbe et al IWLPC Nov 2013

In the past ndash chips made by fabs packaging done by packaging house

Subtle Advantages of Advanced WLP

1 Advanced Wafer Level Packaging can skip the need for a separate supplier of packaging services

2 Easier to solve problems that have interactions between

11

2 Easier to solve problems that have interactions between MEMS fabrication and the packaging process

3 With separate suppliers more effort is put into establishing who owns the problem than in actually solving it

bull Hermeticity of the bonding technologies is key to fabricating a MEMS inertial sensor capable of high Q factors

bull Bottom wafers are fusion bonded

bullTop wafer is bonded by the formation of Gold-Silicon Eutectic above 363ordmC

Three Functional Silicon Layers ndash Two Bonds

DSID-0C0903A9

12

bull Exact bond parameters are critical to the success of the bond and the ultimate performance of the device

bull vacuum levelbull temperature profile

bull Typical bond line is ~100 microm (compare to 500 microm ndash 1500 microm for solder seal of ceramic package)

DSID-0C0903A9

Lid

Device

Base400 microm

60 microm

500 microm

ldquoVia Firstrdquo process

Through Silicon Via Details

13

Key TSV characteristicsraquo Doped poly-Si fill materialraquo 400 micromraquo gt100 MΩ isolation from the substrateraquo lt5 pF parasitic capacitance raquo TSV resistivity lt 4 mΩcmraquo lt 10Ω via resistance UBM and BGA

Lid

Device

Base

Integrated Getter Cavity Design

DSID-0C0903A9

Lid Wafer

Device Wafer 60 microm

500 microm

10 microm gap

50 microm gap

Patternable Getter (2um)

14

Base Wafer

400 microm

20 microm gap

bull Getter is deposited on the lid wafer prior to bonding

bull Cavity around the MEMS can be designed with bump stops

bull AlSi metallization for backside metal traces (allows for re-distribution of the contacts)bull Passivation layer for damage protection and electrical isolation

bull Under bump metallization (UBM) suitable for lead free solder ballsbull SAC 405 solder balls (035 mm diameter)bull Solder balls are placed and then reflowedbull Ball attached yield of 999 across wafer

Backside Metallization and UBM

15

bull Ball attached yield of 999 across wafer

bull Singulated chip is ready for direct attachment to boardbull UBM optimized to ensure reliable attachment to FR4

MicraSilQ trade

Wafer Level Packaging Platform

bull gt 50 Reduced cost through elimination of external packaging

bull Established process for fast ramp to manufacturing Accelerometer Gyroscope

16

bull Simple board reflow mounting

bull Custom device layer for your unique application

Design Kit Available

Through Silicon Via

(TSV)

Lead free solder

1 Thinner dieraquo Thinning of lid wafer straight forwardraquo Thinning of base wafer requires development

2 Thicker Device Layer raquo Allows increased mass of the MEMS

(therefore lower noise floor)

Next Steps for MicraSilQ TM

Lid

Device

400 microm

60 microm

500 microm

17

3 Vias with metal fillraquo Requires developmentraquo Via material would have to survive the

eutectic bond process

Base400 microm

Micralyne Consolidated Overviewbull Founded 1982 (privatized 1998)bull Headquartered in Edmonton

Alberta CAbull Facilities 55000 Sq Ft (5000m2)

bull MEMS Fab Test Metrology Packaging Administration

bull 6rdquo (150mm) Wafer Productionbull Capacity variable based on mix

bull 5K ndash 10K wafers per month based on 5 layer process

bull ISO 9001 and ISO 13485 certified

bull Core Capabilitiesbull MEMS and Micro-fabrication on

Silicon Glass Quartz and other base wafer materials

bull MEMS Process and Micro Structure IP bull More than 30 years of micro and nano

manufacturing ldquoknow howrdquo

bull Focus Marketsbull Industrial Sensorsbull Bio and Medical Sensors

18

bull ISO 9001 and ISO 13485 certifiedbull 83 Employeesbull Customers

bull Fortune 500 System OEMs bull Fabless MEMS Product Companiesbull Medical Optical and Industrial Device

Companies

bull Bio and Medical Sensorsbull Optical Communications

bull Engagement Modelbull Engineering Services

bull Process Design and Process Integrationbull Modeling and Analysis

bull Manufacturing Servicesbull Proof of Concept and Prototypebull Volume Wafer Productionbull Backend Packaging and Test

18

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830

Brownian Noise

bull The mass-spring system is in contact with a thermal bath at temperature T

bull Thermal energy enters from the bath and is dissipated by oscillator motion

bull This motion represents the thermal noise floor of

T

Noise due to the impact of gaseous molecules with the MEMS mass

Micromachined High Resolution Accelerometer Krishnan et al Journal of Indian Institute of Science Vol 873

5

the sensor

mQ

Tk

f

A Brmsnoise 04 ω=∆

Noise floor falls with lowered resonant frequency increased proof mass and increased Q-factor

Noise - want this to be small

m

k=0 Where ωb

mQ 0ω=

Q Factor and NoiseWhat does this mean for the noise limit of high performance accelerometers

bull m = 1 mg

bull ω0

= 4000 rads (~640 Hz)bull Q ~ 50000

mQ

Tk

f

A Brmsnoise 04 ω=∆

100

150

200

250

300

No

ise

(n

g

sqrt

(Hz)

100

150

200

250

300

No

ise

(n

g

sqrt

(Hz)

6

0

50

100

0 20000 40000 60000 80000 100000

No

ise

(n

g

sqrt

(Hz)

Q

0

50

0 2 4 6 8 10

No

ise

(n

g

sqrt

(Hz)

Pressure (Pa)

High performance (low noise) MEMS using discrete packaging

raquo Ceramic package with hermetically sealed lidbull High vacuum MEMS environmentbull Wide seal ring with high temperature solder (AuSn) or glass fritbull Getter can be incorporated into the package to ensure performance over

the lifetime of the product

Discrete Packaging for MEMS

7

raquo Disadvantagesbull Cost - associated die level processing can be gt50 of the total device costbull Difficult to scalebull Bulky package consumes valuable board real estate

httpglobalkyoceracomprdctsemiconsemicomposensor_phtml

1 Standard WLPraquo Wafer bondingraquo Device protection some level of hermeticityraquo Electrical connections often done using exposed lateral bondpad strategyraquo Two stage sawing to expose bond pads then singulateraquo Still requires die level processing (attach wirebonding)

Wafer Level Packaging Approaches

8

Cap

MEMS layer

Side electrical feed through

Base wafer

Hermetic seal

Lid Wafer

Device Wafer

Getter

Metal for In-process Test

Au-Si Eutectic Bond

Comb Structures

Advanced Wafer Level Package ndash MicraSilQ trade

60 microm

Developed by Micralyne and implemented on a customer design as a next generation solution to remove ceramic package

9

Base Wafer

Comb Structures

Cavity Bumps

Polysilicon Filled Vias

Under Bump Metallization

Lead-free Solder

Advanced Wafer Level Packaging

StandardWLP

AdvancedWLP - MicraSilQ TM

Protection of MEMS device

Yes Yes

Decreased die level processing

Yes Yes

10

processing

Electrical connection to MEMS

Lateral feed through with wirebond

Vias with BGAs

Vacuum level ~20 Pa (150 mTorr) lt05 Pa (4 mTorr)

Hermeticity Unknown

Examination of Key Packaging Metrics of a Hermetically sealed MEMS Accerometer Krabbe et al IWLPC Nov 2013

In the past ndash chips made by fabs packaging done by packaging house

Subtle Advantages of Advanced WLP

1 Advanced Wafer Level Packaging can skip the need for a separate supplier of packaging services

2 Easier to solve problems that have interactions between

11

2 Easier to solve problems that have interactions between MEMS fabrication and the packaging process

3 With separate suppliers more effort is put into establishing who owns the problem than in actually solving it

bull Hermeticity of the bonding technologies is key to fabricating a MEMS inertial sensor capable of high Q factors

bull Bottom wafers are fusion bonded

bullTop wafer is bonded by the formation of Gold-Silicon Eutectic above 363ordmC

Three Functional Silicon Layers ndash Two Bonds

DSID-0C0903A9

12

bull Exact bond parameters are critical to the success of the bond and the ultimate performance of the device

bull vacuum levelbull temperature profile

bull Typical bond line is ~100 microm (compare to 500 microm ndash 1500 microm for solder seal of ceramic package)

DSID-0C0903A9

Lid

Device

Base400 microm

60 microm

500 microm

ldquoVia Firstrdquo process

Through Silicon Via Details

13

Key TSV characteristicsraquo Doped poly-Si fill materialraquo 400 micromraquo gt100 MΩ isolation from the substrateraquo lt5 pF parasitic capacitance raquo TSV resistivity lt 4 mΩcmraquo lt 10Ω via resistance UBM and BGA

Lid

Device

Base

Integrated Getter Cavity Design

DSID-0C0903A9

Lid Wafer

Device Wafer 60 microm

500 microm

10 microm gap

50 microm gap

Patternable Getter (2um)

14

Base Wafer

400 microm

20 microm gap

bull Getter is deposited on the lid wafer prior to bonding

bull Cavity around the MEMS can be designed with bump stops

bull AlSi metallization for backside metal traces (allows for re-distribution of the contacts)bull Passivation layer for damage protection and electrical isolation

bull Under bump metallization (UBM) suitable for lead free solder ballsbull SAC 405 solder balls (035 mm diameter)bull Solder balls are placed and then reflowedbull Ball attached yield of 999 across wafer

Backside Metallization and UBM

15

bull Ball attached yield of 999 across wafer

bull Singulated chip is ready for direct attachment to boardbull UBM optimized to ensure reliable attachment to FR4

MicraSilQ trade

Wafer Level Packaging Platform

bull gt 50 Reduced cost through elimination of external packaging

bull Established process for fast ramp to manufacturing Accelerometer Gyroscope

16

bull Simple board reflow mounting

bull Custom device layer for your unique application

Design Kit Available

Through Silicon Via

(TSV)

Lead free solder

1 Thinner dieraquo Thinning of lid wafer straight forwardraquo Thinning of base wafer requires development

2 Thicker Device Layer raquo Allows increased mass of the MEMS

(therefore lower noise floor)

Next Steps for MicraSilQ TM

Lid

Device

400 microm

60 microm

500 microm

17

3 Vias with metal fillraquo Requires developmentraquo Via material would have to survive the

eutectic bond process

Base400 microm

Micralyne Consolidated Overviewbull Founded 1982 (privatized 1998)bull Headquartered in Edmonton

Alberta CAbull Facilities 55000 Sq Ft (5000m2)

bull MEMS Fab Test Metrology Packaging Administration

bull 6rdquo (150mm) Wafer Productionbull Capacity variable based on mix

bull 5K ndash 10K wafers per month based on 5 layer process

bull ISO 9001 and ISO 13485 certified

bull Core Capabilitiesbull MEMS and Micro-fabrication on

Silicon Glass Quartz and other base wafer materials

bull MEMS Process and Micro Structure IP bull More than 30 years of micro and nano

manufacturing ldquoknow howrdquo

bull Focus Marketsbull Industrial Sensorsbull Bio and Medical Sensors

18

bull ISO 9001 and ISO 13485 certifiedbull 83 Employeesbull Customers

bull Fortune 500 System OEMs bull Fabless MEMS Product Companiesbull Medical Optical and Industrial Device

Companies

bull Bio and Medical Sensorsbull Optical Communications

bull Engagement Modelbull Engineering Services

bull Process Design and Process Integrationbull Modeling and Analysis

bull Manufacturing Servicesbull Proof of Concept and Prototypebull Volume Wafer Productionbull Backend Packaging and Test

18

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830

Q Factor and NoiseWhat does this mean for the noise limit of high performance accelerometers

bull m = 1 mg

bull ω0

= 4000 rads (~640 Hz)bull Q ~ 50000

mQ

Tk

f

A Brmsnoise 04 ω=∆

100

150

200

250

300

No

ise

(n

g

sqrt

(Hz)

100

150

200

250

300

No

ise

(n

g

sqrt

(Hz)

6

0

50

100

0 20000 40000 60000 80000 100000

No

ise

(n

g

sqrt

(Hz)

Q

0

50

0 2 4 6 8 10

No

ise

(n

g

sqrt

(Hz)

Pressure (Pa)

High performance (low noise) MEMS using discrete packaging

raquo Ceramic package with hermetically sealed lidbull High vacuum MEMS environmentbull Wide seal ring with high temperature solder (AuSn) or glass fritbull Getter can be incorporated into the package to ensure performance over

the lifetime of the product

Discrete Packaging for MEMS

7

raquo Disadvantagesbull Cost - associated die level processing can be gt50 of the total device costbull Difficult to scalebull Bulky package consumes valuable board real estate

httpglobalkyoceracomprdctsemiconsemicomposensor_phtml

1 Standard WLPraquo Wafer bondingraquo Device protection some level of hermeticityraquo Electrical connections often done using exposed lateral bondpad strategyraquo Two stage sawing to expose bond pads then singulateraquo Still requires die level processing (attach wirebonding)

Wafer Level Packaging Approaches

8

Cap

MEMS layer

Side electrical feed through

Base wafer

Hermetic seal

Lid Wafer

Device Wafer

Getter

Metal for In-process Test

Au-Si Eutectic Bond

Comb Structures

Advanced Wafer Level Package ndash MicraSilQ trade

60 microm

Developed by Micralyne and implemented on a customer design as a next generation solution to remove ceramic package

9

Base Wafer

Comb Structures

Cavity Bumps

Polysilicon Filled Vias

Under Bump Metallization

Lead-free Solder

Advanced Wafer Level Packaging

StandardWLP

AdvancedWLP - MicraSilQ TM

Protection of MEMS device

Yes Yes

Decreased die level processing

Yes Yes

10

processing

Electrical connection to MEMS

Lateral feed through with wirebond

Vias with BGAs

Vacuum level ~20 Pa (150 mTorr) lt05 Pa (4 mTorr)

Hermeticity Unknown

Examination of Key Packaging Metrics of a Hermetically sealed MEMS Accerometer Krabbe et al IWLPC Nov 2013

In the past ndash chips made by fabs packaging done by packaging house

Subtle Advantages of Advanced WLP

1 Advanced Wafer Level Packaging can skip the need for a separate supplier of packaging services

2 Easier to solve problems that have interactions between

11

2 Easier to solve problems that have interactions between MEMS fabrication and the packaging process

3 With separate suppliers more effort is put into establishing who owns the problem than in actually solving it

bull Hermeticity of the bonding technologies is key to fabricating a MEMS inertial sensor capable of high Q factors

bull Bottom wafers are fusion bonded

bullTop wafer is bonded by the formation of Gold-Silicon Eutectic above 363ordmC

Three Functional Silicon Layers ndash Two Bonds

DSID-0C0903A9

12

bull Exact bond parameters are critical to the success of the bond and the ultimate performance of the device

bull vacuum levelbull temperature profile

bull Typical bond line is ~100 microm (compare to 500 microm ndash 1500 microm for solder seal of ceramic package)

DSID-0C0903A9

Lid

Device

Base400 microm

60 microm

500 microm

ldquoVia Firstrdquo process

Through Silicon Via Details

13

Key TSV characteristicsraquo Doped poly-Si fill materialraquo 400 micromraquo gt100 MΩ isolation from the substrateraquo lt5 pF parasitic capacitance raquo TSV resistivity lt 4 mΩcmraquo lt 10Ω via resistance UBM and BGA

Lid

Device

Base

Integrated Getter Cavity Design

DSID-0C0903A9

Lid Wafer

Device Wafer 60 microm

500 microm

10 microm gap

50 microm gap

Patternable Getter (2um)

14

Base Wafer

400 microm

20 microm gap

bull Getter is deposited on the lid wafer prior to bonding

bull Cavity around the MEMS can be designed with bump stops

bull AlSi metallization for backside metal traces (allows for re-distribution of the contacts)bull Passivation layer for damage protection and electrical isolation

bull Under bump metallization (UBM) suitable for lead free solder ballsbull SAC 405 solder balls (035 mm diameter)bull Solder balls are placed and then reflowedbull Ball attached yield of 999 across wafer

Backside Metallization and UBM

15

bull Ball attached yield of 999 across wafer

bull Singulated chip is ready for direct attachment to boardbull UBM optimized to ensure reliable attachment to FR4

MicraSilQ trade

Wafer Level Packaging Platform

bull gt 50 Reduced cost through elimination of external packaging

bull Established process for fast ramp to manufacturing Accelerometer Gyroscope

16

bull Simple board reflow mounting

bull Custom device layer for your unique application

Design Kit Available

Through Silicon Via

(TSV)

Lead free solder

1 Thinner dieraquo Thinning of lid wafer straight forwardraquo Thinning of base wafer requires development

2 Thicker Device Layer raquo Allows increased mass of the MEMS

(therefore lower noise floor)

Next Steps for MicraSilQ TM

Lid

Device

400 microm

60 microm

500 microm

17

3 Vias with metal fillraquo Requires developmentraquo Via material would have to survive the

eutectic bond process

Base400 microm

Micralyne Consolidated Overviewbull Founded 1982 (privatized 1998)bull Headquartered in Edmonton

Alberta CAbull Facilities 55000 Sq Ft (5000m2)

bull MEMS Fab Test Metrology Packaging Administration

bull 6rdquo (150mm) Wafer Productionbull Capacity variable based on mix

bull 5K ndash 10K wafers per month based on 5 layer process

bull ISO 9001 and ISO 13485 certified

bull Core Capabilitiesbull MEMS and Micro-fabrication on

Silicon Glass Quartz and other base wafer materials

bull MEMS Process and Micro Structure IP bull More than 30 years of micro and nano

manufacturing ldquoknow howrdquo

bull Focus Marketsbull Industrial Sensorsbull Bio and Medical Sensors

18

bull ISO 9001 and ISO 13485 certifiedbull 83 Employeesbull Customers

bull Fortune 500 System OEMs bull Fabless MEMS Product Companiesbull Medical Optical and Industrial Device

Companies

bull Bio and Medical Sensorsbull Optical Communications

bull Engagement Modelbull Engineering Services

bull Process Design and Process Integrationbull Modeling and Analysis

bull Manufacturing Servicesbull Proof of Concept and Prototypebull Volume Wafer Productionbull Backend Packaging and Test

18

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830

High performance (low noise) MEMS using discrete packaging

raquo Ceramic package with hermetically sealed lidbull High vacuum MEMS environmentbull Wide seal ring with high temperature solder (AuSn) or glass fritbull Getter can be incorporated into the package to ensure performance over

the lifetime of the product

Discrete Packaging for MEMS

7

raquo Disadvantagesbull Cost - associated die level processing can be gt50 of the total device costbull Difficult to scalebull Bulky package consumes valuable board real estate

httpglobalkyoceracomprdctsemiconsemicomposensor_phtml

1 Standard WLPraquo Wafer bondingraquo Device protection some level of hermeticityraquo Electrical connections often done using exposed lateral bondpad strategyraquo Two stage sawing to expose bond pads then singulateraquo Still requires die level processing (attach wirebonding)

Wafer Level Packaging Approaches

8

Cap

MEMS layer

Side electrical feed through

Base wafer

Hermetic seal

Lid Wafer

Device Wafer

Getter

Metal for In-process Test

Au-Si Eutectic Bond

Comb Structures

Advanced Wafer Level Package ndash MicraSilQ trade

60 microm

Developed by Micralyne and implemented on a customer design as a next generation solution to remove ceramic package

9

Base Wafer

Comb Structures

Cavity Bumps

Polysilicon Filled Vias

Under Bump Metallization

Lead-free Solder

Advanced Wafer Level Packaging

StandardWLP

AdvancedWLP - MicraSilQ TM

Protection of MEMS device

Yes Yes

Decreased die level processing

Yes Yes

10

processing

Electrical connection to MEMS

Lateral feed through with wirebond

Vias with BGAs

Vacuum level ~20 Pa (150 mTorr) lt05 Pa (4 mTorr)

Hermeticity Unknown

Examination of Key Packaging Metrics of a Hermetically sealed MEMS Accerometer Krabbe et al IWLPC Nov 2013

In the past ndash chips made by fabs packaging done by packaging house

Subtle Advantages of Advanced WLP

1 Advanced Wafer Level Packaging can skip the need for a separate supplier of packaging services

2 Easier to solve problems that have interactions between

11

2 Easier to solve problems that have interactions between MEMS fabrication and the packaging process

3 With separate suppliers more effort is put into establishing who owns the problem than in actually solving it

bull Hermeticity of the bonding technologies is key to fabricating a MEMS inertial sensor capable of high Q factors

bull Bottom wafers are fusion bonded

bullTop wafer is bonded by the formation of Gold-Silicon Eutectic above 363ordmC

Three Functional Silicon Layers ndash Two Bonds

DSID-0C0903A9

12

bull Exact bond parameters are critical to the success of the bond and the ultimate performance of the device

bull vacuum levelbull temperature profile

bull Typical bond line is ~100 microm (compare to 500 microm ndash 1500 microm for solder seal of ceramic package)

DSID-0C0903A9

Lid

Device

Base400 microm

60 microm

500 microm

ldquoVia Firstrdquo process

Through Silicon Via Details

13

Key TSV characteristicsraquo Doped poly-Si fill materialraquo 400 micromraquo gt100 MΩ isolation from the substrateraquo lt5 pF parasitic capacitance raquo TSV resistivity lt 4 mΩcmraquo lt 10Ω via resistance UBM and BGA

Lid

Device

Base

Integrated Getter Cavity Design

DSID-0C0903A9

Lid Wafer

Device Wafer 60 microm

500 microm

10 microm gap

50 microm gap

Patternable Getter (2um)

14

Base Wafer

400 microm

20 microm gap

bull Getter is deposited on the lid wafer prior to bonding

bull Cavity around the MEMS can be designed with bump stops

bull AlSi metallization for backside metal traces (allows for re-distribution of the contacts)bull Passivation layer for damage protection and electrical isolation

bull Under bump metallization (UBM) suitable for lead free solder ballsbull SAC 405 solder balls (035 mm diameter)bull Solder balls are placed and then reflowedbull Ball attached yield of 999 across wafer

Backside Metallization and UBM

15

bull Ball attached yield of 999 across wafer

bull Singulated chip is ready for direct attachment to boardbull UBM optimized to ensure reliable attachment to FR4

MicraSilQ trade

Wafer Level Packaging Platform

bull gt 50 Reduced cost through elimination of external packaging

bull Established process for fast ramp to manufacturing Accelerometer Gyroscope

16

bull Simple board reflow mounting

bull Custom device layer for your unique application

Design Kit Available

Through Silicon Via

(TSV)

Lead free solder

1 Thinner dieraquo Thinning of lid wafer straight forwardraquo Thinning of base wafer requires development

2 Thicker Device Layer raquo Allows increased mass of the MEMS

(therefore lower noise floor)

Next Steps for MicraSilQ TM

Lid

Device

400 microm

60 microm

500 microm

17

3 Vias with metal fillraquo Requires developmentraquo Via material would have to survive the

eutectic bond process

Base400 microm

Micralyne Consolidated Overviewbull Founded 1982 (privatized 1998)bull Headquartered in Edmonton

Alberta CAbull Facilities 55000 Sq Ft (5000m2)

bull MEMS Fab Test Metrology Packaging Administration

bull 6rdquo (150mm) Wafer Productionbull Capacity variable based on mix

bull 5K ndash 10K wafers per month based on 5 layer process

bull ISO 9001 and ISO 13485 certified

bull Core Capabilitiesbull MEMS and Micro-fabrication on

Silicon Glass Quartz and other base wafer materials

bull MEMS Process and Micro Structure IP bull More than 30 years of micro and nano

manufacturing ldquoknow howrdquo

bull Focus Marketsbull Industrial Sensorsbull Bio and Medical Sensors

18

bull ISO 9001 and ISO 13485 certifiedbull 83 Employeesbull Customers

bull Fortune 500 System OEMs bull Fabless MEMS Product Companiesbull Medical Optical and Industrial Device

Companies

bull Bio and Medical Sensorsbull Optical Communications

bull Engagement Modelbull Engineering Services

bull Process Design and Process Integrationbull Modeling and Analysis

bull Manufacturing Servicesbull Proof of Concept and Prototypebull Volume Wafer Productionbull Backend Packaging and Test

18

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830

1 Standard WLPraquo Wafer bondingraquo Device protection some level of hermeticityraquo Electrical connections often done using exposed lateral bondpad strategyraquo Two stage sawing to expose bond pads then singulateraquo Still requires die level processing (attach wirebonding)

Wafer Level Packaging Approaches

8

Cap

MEMS layer

Side electrical feed through

Base wafer

Hermetic seal

Lid Wafer

Device Wafer

Getter

Metal for In-process Test

Au-Si Eutectic Bond

Comb Structures

Advanced Wafer Level Package ndash MicraSilQ trade

60 microm

Developed by Micralyne and implemented on a customer design as a next generation solution to remove ceramic package

9

Base Wafer

Comb Structures

Cavity Bumps

Polysilicon Filled Vias

Under Bump Metallization

Lead-free Solder

Advanced Wafer Level Packaging

StandardWLP

AdvancedWLP - MicraSilQ TM

Protection of MEMS device

Yes Yes

Decreased die level processing

Yes Yes

10

processing

Electrical connection to MEMS

Lateral feed through with wirebond

Vias with BGAs

Vacuum level ~20 Pa (150 mTorr) lt05 Pa (4 mTorr)

Hermeticity Unknown

Examination of Key Packaging Metrics of a Hermetically sealed MEMS Accerometer Krabbe et al IWLPC Nov 2013

In the past ndash chips made by fabs packaging done by packaging house

Subtle Advantages of Advanced WLP

1 Advanced Wafer Level Packaging can skip the need for a separate supplier of packaging services

2 Easier to solve problems that have interactions between

11

2 Easier to solve problems that have interactions between MEMS fabrication and the packaging process

3 With separate suppliers more effort is put into establishing who owns the problem than in actually solving it

bull Hermeticity of the bonding technologies is key to fabricating a MEMS inertial sensor capable of high Q factors

bull Bottom wafers are fusion bonded

bullTop wafer is bonded by the formation of Gold-Silicon Eutectic above 363ordmC

Three Functional Silicon Layers ndash Two Bonds

DSID-0C0903A9

12

bull Exact bond parameters are critical to the success of the bond and the ultimate performance of the device

bull vacuum levelbull temperature profile

bull Typical bond line is ~100 microm (compare to 500 microm ndash 1500 microm for solder seal of ceramic package)

DSID-0C0903A9

Lid

Device

Base400 microm

60 microm

500 microm

ldquoVia Firstrdquo process

Through Silicon Via Details

13

Key TSV characteristicsraquo Doped poly-Si fill materialraquo 400 micromraquo gt100 MΩ isolation from the substrateraquo lt5 pF parasitic capacitance raquo TSV resistivity lt 4 mΩcmraquo lt 10Ω via resistance UBM and BGA

Lid

Device

Base

Integrated Getter Cavity Design

DSID-0C0903A9

Lid Wafer

Device Wafer 60 microm

500 microm

10 microm gap

50 microm gap

Patternable Getter (2um)

14

Base Wafer

400 microm

20 microm gap

bull Getter is deposited on the lid wafer prior to bonding

bull Cavity around the MEMS can be designed with bump stops

bull AlSi metallization for backside metal traces (allows for re-distribution of the contacts)bull Passivation layer for damage protection and electrical isolation

bull Under bump metallization (UBM) suitable for lead free solder ballsbull SAC 405 solder balls (035 mm diameter)bull Solder balls are placed and then reflowedbull Ball attached yield of 999 across wafer

Backside Metallization and UBM

15

bull Ball attached yield of 999 across wafer

bull Singulated chip is ready for direct attachment to boardbull UBM optimized to ensure reliable attachment to FR4

MicraSilQ trade

Wafer Level Packaging Platform

bull gt 50 Reduced cost through elimination of external packaging

bull Established process for fast ramp to manufacturing Accelerometer Gyroscope

16

bull Simple board reflow mounting

bull Custom device layer for your unique application

Design Kit Available

Through Silicon Via

(TSV)

Lead free solder

1 Thinner dieraquo Thinning of lid wafer straight forwardraquo Thinning of base wafer requires development

2 Thicker Device Layer raquo Allows increased mass of the MEMS

(therefore lower noise floor)

Next Steps for MicraSilQ TM

Lid

Device

400 microm

60 microm

500 microm

17

3 Vias with metal fillraquo Requires developmentraquo Via material would have to survive the

eutectic bond process

Base400 microm

Micralyne Consolidated Overviewbull Founded 1982 (privatized 1998)bull Headquartered in Edmonton

Alberta CAbull Facilities 55000 Sq Ft (5000m2)

bull MEMS Fab Test Metrology Packaging Administration

bull 6rdquo (150mm) Wafer Productionbull Capacity variable based on mix

bull 5K ndash 10K wafers per month based on 5 layer process

bull ISO 9001 and ISO 13485 certified

bull Core Capabilitiesbull MEMS and Micro-fabrication on

Silicon Glass Quartz and other base wafer materials

bull MEMS Process and Micro Structure IP bull More than 30 years of micro and nano

manufacturing ldquoknow howrdquo

bull Focus Marketsbull Industrial Sensorsbull Bio and Medical Sensors

18

bull ISO 9001 and ISO 13485 certifiedbull 83 Employeesbull Customers

bull Fortune 500 System OEMs bull Fabless MEMS Product Companiesbull Medical Optical and Industrial Device

Companies

bull Bio and Medical Sensorsbull Optical Communications

bull Engagement Modelbull Engineering Services

bull Process Design and Process Integrationbull Modeling and Analysis

bull Manufacturing Servicesbull Proof of Concept and Prototypebull Volume Wafer Productionbull Backend Packaging and Test

18

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830

Lid Wafer

Device Wafer

Getter

Metal for In-process Test

Au-Si Eutectic Bond

Comb Structures

Advanced Wafer Level Package ndash MicraSilQ trade

60 microm

Developed by Micralyne and implemented on a customer design as a next generation solution to remove ceramic package

9

Base Wafer

Comb Structures

Cavity Bumps

Polysilicon Filled Vias

Under Bump Metallization

Lead-free Solder

Advanced Wafer Level Packaging

StandardWLP

AdvancedWLP - MicraSilQ TM

Protection of MEMS device

Yes Yes

Decreased die level processing

Yes Yes

10

processing

Electrical connection to MEMS

Lateral feed through with wirebond

Vias with BGAs

Vacuum level ~20 Pa (150 mTorr) lt05 Pa (4 mTorr)

Hermeticity Unknown

Examination of Key Packaging Metrics of a Hermetically sealed MEMS Accerometer Krabbe et al IWLPC Nov 2013

In the past ndash chips made by fabs packaging done by packaging house

Subtle Advantages of Advanced WLP

1 Advanced Wafer Level Packaging can skip the need for a separate supplier of packaging services

2 Easier to solve problems that have interactions between

11

2 Easier to solve problems that have interactions between MEMS fabrication and the packaging process

3 With separate suppliers more effort is put into establishing who owns the problem than in actually solving it

bull Hermeticity of the bonding technologies is key to fabricating a MEMS inertial sensor capable of high Q factors

bull Bottom wafers are fusion bonded

bullTop wafer is bonded by the formation of Gold-Silicon Eutectic above 363ordmC

Three Functional Silicon Layers ndash Two Bonds

DSID-0C0903A9

12

bull Exact bond parameters are critical to the success of the bond and the ultimate performance of the device

bull vacuum levelbull temperature profile

bull Typical bond line is ~100 microm (compare to 500 microm ndash 1500 microm for solder seal of ceramic package)

DSID-0C0903A9

Lid

Device

Base400 microm

60 microm

500 microm

ldquoVia Firstrdquo process

Through Silicon Via Details

13

Key TSV characteristicsraquo Doped poly-Si fill materialraquo 400 micromraquo gt100 MΩ isolation from the substrateraquo lt5 pF parasitic capacitance raquo TSV resistivity lt 4 mΩcmraquo lt 10Ω via resistance UBM and BGA

Lid

Device

Base

Integrated Getter Cavity Design

DSID-0C0903A9

Lid Wafer

Device Wafer 60 microm

500 microm

10 microm gap

50 microm gap

Patternable Getter (2um)

14

Base Wafer

400 microm

20 microm gap

bull Getter is deposited on the lid wafer prior to bonding

bull Cavity around the MEMS can be designed with bump stops

bull AlSi metallization for backside metal traces (allows for re-distribution of the contacts)bull Passivation layer for damage protection and electrical isolation

bull Under bump metallization (UBM) suitable for lead free solder ballsbull SAC 405 solder balls (035 mm diameter)bull Solder balls are placed and then reflowedbull Ball attached yield of 999 across wafer

Backside Metallization and UBM

15

bull Ball attached yield of 999 across wafer

bull Singulated chip is ready for direct attachment to boardbull UBM optimized to ensure reliable attachment to FR4

MicraSilQ trade

Wafer Level Packaging Platform

bull gt 50 Reduced cost through elimination of external packaging

bull Established process for fast ramp to manufacturing Accelerometer Gyroscope

16

bull Simple board reflow mounting

bull Custom device layer for your unique application

Design Kit Available

Through Silicon Via

(TSV)

Lead free solder

1 Thinner dieraquo Thinning of lid wafer straight forwardraquo Thinning of base wafer requires development

2 Thicker Device Layer raquo Allows increased mass of the MEMS

(therefore lower noise floor)

Next Steps for MicraSilQ TM

Lid

Device

400 microm

60 microm

500 microm

17

3 Vias with metal fillraquo Requires developmentraquo Via material would have to survive the

eutectic bond process

Base400 microm

Micralyne Consolidated Overviewbull Founded 1982 (privatized 1998)bull Headquartered in Edmonton

Alberta CAbull Facilities 55000 Sq Ft (5000m2)

bull MEMS Fab Test Metrology Packaging Administration

bull 6rdquo (150mm) Wafer Productionbull Capacity variable based on mix

bull 5K ndash 10K wafers per month based on 5 layer process

bull ISO 9001 and ISO 13485 certified

bull Core Capabilitiesbull MEMS and Micro-fabrication on

Silicon Glass Quartz and other base wafer materials

bull MEMS Process and Micro Structure IP bull More than 30 years of micro and nano

manufacturing ldquoknow howrdquo

bull Focus Marketsbull Industrial Sensorsbull Bio and Medical Sensors

18

bull ISO 9001 and ISO 13485 certifiedbull 83 Employeesbull Customers

bull Fortune 500 System OEMs bull Fabless MEMS Product Companiesbull Medical Optical and Industrial Device

Companies

bull Bio and Medical Sensorsbull Optical Communications

bull Engagement Modelbull Engineering Services

bull Process Design and Process Integrationbull Modeling and Analysis

bull Manufacturing Servicesbull Proof of Concept and Prototypebull Volume Wafer Productionbull Backend Packaging and Test

18

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830

Advanced Wafer Level Packaging

StandardWLP

AdvancedWLP - MicraSilQ TM

Protection of MEMS device

Yes Yes

Decreased die level processing

Yes Yes

10

processing

Electrical connection to MEMS

Lateral feed through with wirebond

Vias with BGAs

Vacuum level ~20 Pa (150 mTorr) lt05 Pa (4 mTorr)

Hermeticity Unknown

Examination of Key Packaging Metrics of a Hermetically sealed MEMS Accerometer Krabbe et al IWLPC Nov 2013

In the past ndash chips made by fabs packaging done by packaging house

Subtle Advantages of Advanced WLP

1 Advanced Wafer Level Packaging can skip the need for a separate supplier of packaging services

2 Easier to solve problems that have interactions between

11

2 Easier to solve problems that have interactions between MEMS fabrication and the packaging process

3 With separate suppliers more effort is put into establishing who owns the problem than in actually solving it

bull Hermeticity of the bonding technologies is key to fabricating a MEMS inertial sensor capable of high Q factors

bull Bottom wafers are fusion bonded

bullTop wafer is bonded by the formation of Gold-Silicon Eutectic above 363ordmC

Three Functional Silicon Layers ndash Two Bonds

DSID-0C0903A9

12

bull Exact bond parameters are critical to the success of the bond and the ultimate performance of the device

bull vacuum levelbull temperature profile

bull Typical bond line is ~100 microm (compare to 500 microm ndash 1500 microm for solder seal of ceramic package)

DSID-0C0903A9

Lid

Device

Base400 microm

60 microm

500 microm

ldquoVia Firstrdquo process

Through Silicon Via Details

13

Key TSV characteristicsraquo Doped poly-Si fill materialraquo 400 micromraquo gt100 MΩ isolation from the substrateraquo lt5 pF parasitic capacitance raquo TSV resistivity lt 4 mΩcmraquo lt 10Ω via resistance UBM and BGA

Lid

Device

Base

Integrated Getter Cavity Design

DSID-0C0903A9

Lid Wafer

Device Wafer 60 microm

500 microm

10 microm gap

50 microm gap

Patternable Getter (2um)

14

Base Wafer

400 microm

20 microm gap

bull Getter is deposited on the lid wafer prior to bonding

bull Cavity around the MEMS can be designed with bump stops

bull AlSi metallization for backside metal traces (allows for re-distribution of the contacts)bull Passivation layer for damage protection and electrical isolation

bull Under bump metallization (UBM) suitable for lead free solder ballsbull SAC 405 solder balls (035 mm diameter)bull Solder balls are placed and then reflowedbull Ball attached yield of 999 across wafer

Backside Metallization and UBM

15

bull Ball attached yield of 999 across wafer

bull Singulated chip is ready for direct attachment to boardbull UBM optimized to ensure reliable attachment to FR4

MicraSilQ trade

Wafer Level Packaging Platform

bull gt 50 Reduced cost through elimination of external packaging

bull Established process for fast ramp to manufacturing Accelerometer Gyroscope

16

bull Simple board reflow mounting

bull Custom device layer for your unique application

Design Kit Available

Through Silicon Via

(TSV)

Lead free solder

1 Thinner dieraquo Thinning of lid wafer straight forwardraquo Thinning of base wafer requires development

2 Thicker Device Layer raquo Allows increased mass of the MEMS

(therefore lower noise floor)

Next Steps for MicraSilQ TM

Lid

Device

400 microm

60 microm

500 microm

17

3 Vias with metal fillraquo Requires developmentraquo Via material would have to survive the

eutectic bond process

Base400 microm

Micralyne Consolidated Overviewbull Founded 1982 (privatized 1998)bull Headquartered in Edmonton

Alberta CAbull Facilities 55000 Sq Ft (5000m2)

bull MEMS Fab Test Metrology Packaging Administration

bull 6rdquo (150mm) Wafer Productionbull Capacity variable based on mix

bull 5K ndash 10K wafers per month based on 5 layer process

bull ISO 9001 and ISO 13485 certified

bull Core Capabilitiesbull MEMS and Micro-fabrication on

Silicon Glass Quartz and other base wafer materials

bull MEMS Process and Micro Structure IP bull More than 30 years of micro and nano

manufacturing ldquoknow howrdquo

bull Focus Marketsbull Industrial Sensorsbull Bio and Medical Sensors

18

bull ISO 9001 and ISO 13485 certifiedbull 83 Employeesbull Customers

bull Fortune 500 System OEMs bull Fabless MEMS Product Companiesbull Medical Optical and Industrial Device

Companies

bull Bio and Medical Sensorsbull Optical Communications

bull Engagement Modelbull Engineering Services

bull Process Design and Process Integrationbull Modeling and Analysis

bull Manufacturing Servicesbull Proof of Concept and Prototypebull Volume Wafer Productionbull Backend Packaging and Test

18

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830

In the past ndash chips made by fabs packaging done by packaging house

Subtle Advantages of Advanced WLP

1 Advanced Wafer Level Packaging can skip the need for a separate supplier of packaging services

2 Easier to solve problems that have interactions between

11

2 Easier to solve problems that have interactions between MEMS fabrication and the packaging process

3 With separate suppliers more effort is put into establishing who owns the problem than in actually solving it

bull Hermeticity of the bonding technologies is key to fabricating a MEMS inertial sensor capable of high Q factors

bull Bottom wafers are fusion bonded

bullTop wafer is bonded by the formation of Gold-Silicon Eutectic above 363ordmC

Three Functional Silicon Layers ndash Two Bonds

DSID-0C0903A9

12

bull Exact bond parameters are critical to the success of the bond and the ultimate performance of the device

bull vacuum levelbull temperature profile

bull Typical bond line is ~100 microm (compare to 500 microm ndash 1500 microm for solder seal of ceramic package)

DSID-0C0903A9

Lid

Device

Base400 microm

60 microm

500 microm

ldquoVia Firstrdquo process

Through Silicon Via Details

13

Key TSV characteristicsraquo Doped poly-Si fill materialraquo 400 micromraquo gt100 MΩ isolation from the substrateraquo lt5 pF parasitic capacitance raquo TSV resistivity lt 4 mΩcmraquo lt 10Ω via resistance UBM and BGA

Lid

Device

Base

Integrated Getter Cavity Design

DSID-0C0903A9

Lid Wafer

Device Wafer 60 microm

500 microm

10 microm gap

50 microm gap

Patternable Getter (2um)

14

Base Wafer

400 microm

20 microm gap

bull Getter is deposited on the lid wafer prior to bonding

bull Cavity around the MEMS can be designed with bump stops

bull AlSi metallization for backside metal traces (allows for re-distribution of the contacts)bull Passivation layer for damage protection and electrical isolation

bull Under bump metallization (UBM) suitable for lead free solder ballsbull SAC 405 solder balls (035 mm diameter)bull Solder balls are placed and then reflowedbull Ball attached yield of 999 across wafer

Backside Metallization and UBM

15

bull Ball attached yield of 999 across wafer

bull Singulated chip is ready for direct attachment to boardbull UBM optimized to ensure reliable attachment to FR4

MicraSilQ trade

Wafer Level Packaging Platform

bull gt 50 Reduced cost through elimination of external packaging

bull Established process for fast ramp to manufacturing Accelerometer Gyroscope

16

bull Simple board reflow mounting

bull Custom device layer for your unique application

Design Kit Available

Through Silicon Via

(TSV)

Lead free solder

1 Thinner dieraquo Thinning of lid wafer straight forwardraquo Thinning of base wafer requires development

2 Thicker Device Layer raquo Allows increased mass of the MEMS

(therefore lower noise floor)

Next Steps for MicraSilQ TM

Lid

Device

400 microm

60 microm

500 microm

17

3 Vias with metal fillraquo Requires developmentraquo Via material would have to survive the

eutectic bond process

Base400 microm

Micralyne Consolidated Overviewbull Founded 1982 (privatized 1998)bull Headquartered in Edmonton

Alberta CAbull Facilities 55000 Sq Ft (5000m2)

bull MEMS Fab Test Metrology Packaging Administration

bull 6rdquo (150mm) Wafer Productionbull Capacity variable based on mix

bull 5K ndash 10K wafers per month based on 5 layer process

bull ISO 9001 and ISO 13485 certified

bull Core Capabilitiesbull MEMS and Micro-fabrication on

Silicon Glass Quartz and other base wafer materials

bull MEMS Process and Micro Structure IP bull More than 30 years of micro and nano

manufacturing ldquoknow howrdquo

bull Focus Marketsbull Industrial Sensorsbull Bio and Medical Sensors

18

bull ISO 9001 and ISO 13485 certifiedbull 83 Employeesbull Customers

bull Fortune 500 System OEMs bull Fabless MEMS Product Companiesbull Medical Optical and Industrial Device

Companies

bull Bio and Medical Sensorsbull Optical Communications

bull Engagement Modelbull Engineering Services

bull Process Design and Process Integrationbull Modeling and Analysis

bull Manufacturing Servicesbull Proof of Concept and Prototypebull Volume Wafer Productionbull Backend Packaging and Test

18

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830

bull Hermeticity of the bonding technologies is key to fabricating a MEMS inertial sensor capable of high Q factors

bull Bottom wafers are fusion bonded

bullTop wafer is bonded by the formation of Gold-Silicon Eutectic above 363ordmC

Three Functional Silicon Layers ndash Two Bonds

DSID-0C0903A9

12

bull Exact bond parameters are critical to the success of the bond and the ultimate performance of the device

bull vacuum levelbull temperature profile

bull Typical bond line is ~100 microm (compare to 500 microm ndash 1500 microm for solder seal of ceramic package)

DSID-0C0903A9

Lid

Device

Base400 microm

60 microm

500 microm

ldquoVia Firstrdquo process

Through Silicon Via Details

13

Key TSV characteristicsraquo Doped poly-Si fill materialraquo 400 micromraquo gt100 MΩ isolation from the substrateraquo lt5 pF parasitic capacitance raquo TSV resistivity lt 4 mΩcmraquo lt 10Ω via resistance UBM and BGA

Lid

Device

Base

Integrated Getter Cavity Design

DSID-0C0903A9

Lid Wafer

Device Wafer 60 microm

500 microm

10 microm gap

50 microm gap

Patternable Getter (2um)

14

Base Wafer

400 microm

20 microm gap

bull Getter is deposited on the lid wafer prior to bonding

bull Cavity around the MEMS can be designed with bump stops

bull AlSi metallization for backside metal traces (allows for re-distribution of the contacts)bull Passivation layer for damage protection and electrical isolation

bull Under bump metallization (UBM) suitable for lead free solder ballsbull SAC 405 solder balls (035 mm diameter)bull Solder balls are placed and then reflowedbull Ball attached yield of 999 across wafer

Backside Metallization and UBM

15

bull Ball attached yield of 999 across wafer

bull Singulated chip is ready for direct attachment to boardbull UBM optimized to ensure reliable attachment to FR4

MicraSilQ trade

Wafer Level Packaging Platform

bull gt 50 Reduced cost through elimination of external packaging

bull Established process for fast ramp to manufacturing Accelerometer Gyroscope

16

bull Simple board reflow mounting

bull Custom device layer for your unique application

Design Kit Available

Through Silicon Via

(TSV)

Lead free solder

1 Thinner dieraquo Thinning of lid wafer straight forwardraquo Thinning of base wafer requires development

2 Thicker Device Layer raquo Allows increased mass of the MEMS

(therefore lower noise floor)

Next Steps for MicraSilQ TM

Lid

Device

400 microm

60 microm

500 microm

17

3 Vias with metal fillraquo Requires developmentraquo Via material would have to survive the

eutectic bond process

Base400 microm

Micralyne Consolidated Overviewbull Founded 1982 (privatized 1998)bull Headquartered in Edmonton

Alberta CAbull Facilities 55000 Sq Ft (5000m2)

bull MEMS Fab Test Metrology Packaging Administration

bull 6rdquo (150mm) Wafer Productionbull Capacity variable based on mix

bull 5K ndash 10K wafers per month based on 5 layer process

bull ISO 9001 and ISO 13485 certified

bull Core Capabilitiesbull MEMS and Micro-fabrication on

Silicon Glass Quartz and other base wafer materials

bull MEMS Process and Micro Structure IP bull More than 30 years of micro and nano

manufacturing ldquoknow howrdquo

bull Focus Marketsbull Industrial Sensorsbull Bio and Medical Sensors

18

bull ISO 9001 and ISO 13485 certifiedbull 83 Employeesbull Customers

bull Fortune 500 System OEMs bull Fabless MEMS Product Companiesbull Medical Optical and Industrial Device

Companies

bull Bio and Medical Sensorsbull Optical Communications

bull Engagement Modelbull Engineering Services

bull Process Design and Process Integrationbull Modeling and Analysis

bull Manufacturing Servicesbull Proof of Concept and Prototypebull Volume Wafer Productionbull Backend Packaging and Test

18

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830

ldquoVia Firstrdquo process

Through Silicon Via Details

13

Key TSV characteristicsraquo Doped poly-Si fill materialraquo 400 micromraquo gt100 MΩ isolation from the substrateraquo lt5 pF parasitic capacitance raquo TSV resistivity lt 4 mΩcmraquo lt 10Ω via resistance UBM and BGA

Lid

Device

Base

Integrated Getter Cavity Design

DSID-0C0903A9

Lid Wafer

Device Wafer 60 microm

500 microm

10 microm gap

50 microm gap

Patternable Getter (2um)

14

Base Wafer

400 microm

20 microm gap

bull Getter is deposited on the lid wafer prior to bonding

bull Cavity around the MEMS can be designed with bump stops

bull AlSi metallization for backside metal traces (allows for re-distribution of the contacts)bull Passivation layer for damage protection and electrical isolation

bull Under bump metallization (UBM) suitable for lead free solder ballsbull SAC 405 solder balls (035 mm diameter)bull Solder balls are placed and then reflowedbull Ball attached yield of 999 across wafer

Backside Metallization and UBM

15

bull Ball attached yield of 999 across wafer

bull Singulated chip is ready for direct attachment to boardbull UBM optimized to ensure reliable attachment to FR4

MicraSilQ trade

Wafer Level Packaging Platform

bull gt 50 Reduced cost through elimination of external packaging

bull Established process for fast ramp to manufacturing Accelerometer Gyroscope

16

bull Simple board reflow mounting

bull Custom device layer for your unique application

Design Kit Available

Through Silicon Via

(TSV)

Lead free solder

1 Thinner dieraquo Thinning of lid wafer straight forwardraquo Thinning of base wafer requires development

2 Thicker Device Layer raquo Allows increased mass of the MEMS

(therefore lower noise floor)

Next Steps for MicraSilQ TM

Lid

Device

400 microm

60 microm

500 microm

17

3 Vias with metal fillraquo Requires developmentraquo Via material would have to survive the

eutectic bond process

Base400 microm

Micralyne Consolidated Overviewbull Founded 1982 (privatized 1998)bull Headquartered in Edmonton

Alberta CAbull Facilities 55000 Sq Ft (5000m2)

bull MEMS Fab Test Metrology Packaging Administration

bull 6rdquo (150mm) Wafer Productionbull Capacity variable based on mix

bull 5K ndash 10K wafers per month based on 5 layer process

bull ISO 9001 and ISO 13485 certified

bull Core Capabilitiesbull MEMS and Micro-fabrication on

Silicon Glass Quartz and other base wafer materials

bull MEMS Process and Micro Structure IP bull More than 30 years of micro and nano

manufacturing ldquoknow howrdquo

bull Focus Marketsbull Industrial Sensorsbull Bio and Medical Sensors

18

bull ISO 9001 and ISO 13485 certifiedbull 83 Employeesbull Customers

bull Fortune 500 System OEMs bull Fabless MEMS Product Companiesbull Medical Optical and Industrial Device

Companies

bull Bio and Medical Sensorsbull Optical Communications

bull Engagement Modelbull Engineering Services

bull Process Design and Process Integrationbull Modeling and Analysis

bull Manufacturing Servicesbull Proof of Concept and Prototypebull Volume Wafer Productionbull Backend Packaging and Test

18

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830

Integrated Getter Cavity Design

DSID-0C0903A9

Lid Wafer

Device Wafer 60 microm

500 microm

10 microm gap

50 microm gap

Patternable Getter (2um)

14

Base Wafer

400 microm

20 microm gap

bull Getter is deposited on the lid wafer prior to bonding

bull Cavity around the MEMS can be designed with bump stops

bull AlSi metallization for backside metal traces (allows for re-distribution of the contacts)bull Passivation layer for damage protection and electrical isolation

bull Under bump metallization (UBM) suitable for lead free solder ballsbull SAC 405 solder balls (035 mm diameter)bull Solder balls are placed and then reflowedbull Ball attached yield of 999 across wafer

Backside Metallization and UBM

15

bull Ball attached yield of 999 across wafer

bull Singulated chip is ready for direct attachment to boardbull UBM optimized to ensure reliable attachment to FR4

MicraSilQ trade

Wafer Level Packaging Platform

bull gt 50 Reduced cost through elimination of external packaging

bull Established process for fast ramp to manufacturing Accelerometer Gyroscope

16

bull Simple board reflow mounting

bull Custom device layer for your unique application

Design Kit Available

Through Silicon Via

(TSV)

Lead free solder

1 Thinner dieraquo Thinning of lid wafer straight forwardraquo Thinning of base wafer requires development

2 Thicker Device Layer raquo Allows increased mass of the MEMS

(therefore lower noise floor)

Next Steps for MicraSilQ TM

Lid

Device

400 microm

60 microm

500 microm

17

3 Vias with metal fillraquo Requires developmentraquo Via material would have to survive the

eutectic bond process

Base400 microm

Micralyne Consolidated Overviewbull Founded 1982 (privatized 1998)bull Headquartered in Edmonton

Alberta CAbull Facilities 55000 Sq Ft (5000m2)

bull MEMS Fab Test Metrology Packaging Administration

bull 6rdquo (150mm) Wafer Productionbull Capacity variable based on mix

bull 5K ndash 10K wafers per month based on 5 layer process

bull ISO 9001 and ISO 13485 certified

bull Core Capabilitiesbull MEMS and Micro-fabrication on

Silicon Glass Quartz and other base wafer materials

bull MEMS Process and Micro Structure IP bull More than 30 years of micro and nano

manufacturing ldquoknow howrdquo

bull Focus Marketsbull Industrial Sensorsbull Bio and Medical Sensors

18

bull ISO 9001 and ISO 13485 certifiedbull 83 Employeesbull Customers

bull Fortune 500 System OEMs bull Fabless MEMS Product Companiesbull Medical Optical and Industrial Device

Companies

bull Bio and Medical Sensorsbull Optical Communications

bull Engagement Modelbull Engineering Services

bull Process Design and Process Integrationbull Modeling and Analysis

bull Manufacturing Servicesbull Proof of Concept and Prototypebull Volume Wafer Productionbull Backend Packaging and Test

18

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830

bull AlSi metallization for backside metal traces (allows for re-distribution of the contacts)bull Passivation layer for damage protection and electrical isolation

bull Under bump metallization (UBM) suitable for lead free solder ballsbull SAC 405 solder balls (035 mm diameter)bull Solder balls are placed and then reflowedbull Ball attached yield of 999 across wafer

Backside Metallization and UBM

15

bull Ball attached yield of 999 across wafer

bull Singulated chip is ready for direct attachment to boardbull UBM optimized to ensure reliable attachment to FR4

MicraSilQ trade

Wafer Level Packaging Platform

bull gt 50 Reduced cost through elimination of external packaging

bull Established process for fast ramp to manufacturing Accelerometer Gyroscope

16

bull Simple board reflow mounting

bull Custom device layer for your unique application

Design Kit Available

Through Silicon Via

(TSV)

Lead free solder

1 Thinner dieraquo Thinning of lid wafer straight forwardraquo Thinning of base wafer requires development

2 Thicker Device Layer raquo Allows increased mass of the MEMS

(therefore lower noise floor)

Next Steps for MicraSilQ TM

Lid

Device

400 microm

60 microm

500 microm

17

3 Vias with metal fillraquo Requires developmentraquo Via material would have to survive the

eutectic bond process

Base400 microm

Micralyne Consolidated Overviewbull Founded 1982 (privatized 1998)bull Headquartered in Edmonton

Alberta CAbull Facilities 55000 Sq Ft (5000m2)

bull MEMS Fab Test Metrology Packaging Administration

bull 6rdquo (150mm) Wafer Productionbull Capacity variable based on mix

bull 5K ndash 10K wafers per month based on 5 layer process

bull ISO 9001 and ISO 13485 certified

bull Core Capabilitiesbull MEMS and Micro-fabrication on

Silicon Glass Quartz and other base wafer materials

bull MEMS Process and Micro Structure IP bull More than 30 years of micro and nano

manufacturing ldquoknow howrdquo

bull Focus Marketsbull Industrial Sensorsbull Bio and Medical Sensors

18

bull ISO 9001 and ISO 13485 certifiedbull 83 Employeesbull Customers

bull Fortune 500 System OEMs bull Fabless MEMS Product Companiesbull Medical Optical and Industrial Device

Companies

bull Bio and Medical Sensorsbull Optical Communications

bull Engagement Modelbull Engineering Services

bull Process Design and Process Integrationbull Modeling and Analysis

bull Manufacturing Servicesbull Proof of Concept and Prototypebull Volume Wafer Productionbull Backend Packaging and Test

18

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830

MicraSilQ trade

Wafer Level Packaging Platform

bull gt 50 Reduced cost through elimination of external packaging

bull Established process for fast ramp to manufacturing Accelerometer Gyroscope

16

bull Simple board reflow mounting

bull Custom device layer for your unique application

Design Kit Available

Through Silicon Via

(TSV)

Lead free solder

1 Thinner dieraquo Thinning of lid wafer straight forwardraquo Thinning of base wafer requires development

2 Thicker Device Layer raquo Allows increased mass of the MEMS

(therefore lower noise floor)

Next Steps for MicraSilQ TM

Lid

Device

400 microm

60 microm

500 microm

17

3 Vias with metal fillraquo Requires developmentraquo Via material would have to survive the

eutectic bond process

Base400 microm

Micralyne Consolidated Overviewbull Founded 1982 (privatized 1998)bull Headquartered in Edmonton

Alberta CAbull Facilities 55000 Sq Ft (5000m2)

bull MEMS Fab Test Metrology Packaging Administration

bull 6rdquo (150mm) Wafer Productionbull Capacity variable based on mix

bull 5K ndash 10K wafers per month based on 5 layer process

bull ISO 9001 and ISO 13485 certified

bull Core Capabilitiesbull MEMS and Micro-fabrication on

Silicon Glass Quartz and other base wafer materials

bull MEMS Process and Micro Structure IP bull More than 30 years of micro and nano

manufacturing ldquoknow howrdquo

bull Focus Marketsbull Industrial Sensorsbull Bio and Medical Sensors

18

bull ISO 9001 and ISO 13485 certifiedbull 83 Employeesbull Customers

bull Fortune 500 System OEMs bull Fabless MEMS Product Companiesbull Medical Optical and Industrial Device

Companies

bull Bio and Medical Sensorsbull Optical Communications

bull Engagement Modelbull Engineering Services

bull Process Design and Process Integrationbull Modeling and Analysis

bull Manufacturing Servicesbull Proof of Concept and Prototypebull Volume Wafer Productionbull Backend Packaging and Test

18

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830

1 Thinner dieraquo Thinning of lid wafer straight forwardraquo Thinning of base wafer requires development

2 Thicker Device Layer raquo Allows increased mass of the MEMS

(therefore lower noise floor)

Next Steps for MicraSilQ TM

Lid

Device

400 microm

60 microm

500 microm

17

3 Vias with metal fillraquo Requires developmentraquo Via material would have to survive the

eutectic bond process

Base400 microm

Micralyne Consolidated Overviewbull Founded 1982 (privatized 1998)bull Headquartered in Edmonton

Alberta CAbull Facilities 55000 Sq Ft (5000m2)

bull MEMS Fab Test Metrology Packaging Administration

bull 6rdquo (150mm) Wafer Productionbull Capacity variable based on mix

bull 5K ndash 10K wafers per month based on 5 layer process

bull ISO 9001 and ISO 13485 certified

bull Core Capabilitiesbull MEMS and Micro-fabrication on

Silicon Glass Quartz and other base wafer materials

bull MEMS Process and Micro Structure IP bull More than 30 years of micro and nano

manufacturing ldquoknow howrdquo

bull Focus Marketsbull Industrial Sensorsbull Bio and Medical Sensors

18

bull ISO 9001 and ISO 13485 certifiedbull 83 Employeesbull Customers

bull Fortune 500 System OEMs bull Fabless MEMS Product Companiesbull Medical Optical and Industrial Device

Companies

bull Bio and Medical Sensorsbull Optical Communications

bull Engagement Modelbull Engineering Services

bull Process Design and Process Integrationbull Modeling and Analysis

bull Manufacturing Servicesbull Proof of Concept and Prototypebull Volume Wafer Productionbull Backend Packaging and Test

18

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830

Micralyne Consolidated Overviewbull Founded 1982 (privatized 1998)bull Headquartered in Edmonton

Alberta CAbull Facilities 55000 Sq Ft (5000m2)

bull MEMS Fab Test Metrology Packaging Administration

bull 6rdquo (150mm) Wafer Productionbull Capacity variable based on mix

bull 5K ndash 10K wafers per month based on 5 layer process

bull ISO 9001 and ISO 13485 certified

bull Core Capabilitiesbull MEMS and Micro-fabrication on

Silicon Glass Quartz and other base wafer materials

bull MEMS Process and Micro Structure IP bull More than 30 years of micro and nano

manufacturing ldquoknow howrdquo

bull Focus Marketsbull Industrial Sensorsbull Bio and Medical Sensors

18

bull ISO 9001 and ISO 13485 certifiedbull 83 Employeesbull Customers

bull Fortune 500 System OEMs bull Fabless MEMS Product Companiesbull Medical Optical and Industrial Device

Companies

bull Bio and Medical Sensorsbull Optical Communications

bull Engagement Modelbull Engineering Services

bull Process Design and Process Integrationbull Modeling and Analysis

bull Manufacturing Servicesbull Proof of Concept and Prototypebull Volume Wafer Productionbull Backend Packaging and Test

18

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830

Thank You

19

Dean Spicer Director of Engineeringdeansmicralynecom

Tel 780 431 4411 x2256

Paul PickeringVP Sales amp Marketingpaulpmicralynecom

Tel 408 981 5830