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Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~ m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett Films Oriented block co-polymers Intermolecular interaction X~ nm

Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~ m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

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Page 1: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

Methods

Micro-contactprinting

Monolayer

UV mask

Micro-lithography

Limited by wavelength

X ~ m

~ 10nm

Nano-writing

Phase separated Langmuir-Blodgett Films

Oriented block co-polymers

Intermolecular interaction

X~ nm

Page 2: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

Nanoisland

matrix

Chemical Functionalities Differing in size and type

Examples: CH3-, NH2-, CF3-, COOH-, halide, ethylene oxide

Island Surfaces are Formed By Using SAMs with Two Different Functional Groups

Substrate

Terminal FunctionalityAnchoring Functional-

ity

Surfactant type B

Surfactant typeA

Page 3: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

Temp : 220C

OTS

Dehydrated Substrate

In 1.1 mM APhMS 60 sec

rinse in toluene

In 1.1 mM OTS soln60 min

CHCl3 rinse15 min 8 Å

Recessed Islands of APhMSIn OTS Background by Backfilling

0 5 P-Aminophenyltrimethoxy silane

m

Silicon waferOHOH OHOH OHOH OHOH

Page 4: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

OTS

Ht difference :15 Å

Temp : 220C

Dehydrated Substrate

In 1.1 mM APhMS 60 sec

rinse in toluene

In 1.1 mM OTS soln60 min

CHCl3 rinse15 min 0 5

Recessed Islands of APhMSIn OTS Background by Backfilling

octadecyltrichlorosilanem

Silicon wafer

Page 5: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

Method B: Co-Adsorption

Mixed monolayer of OTS and APS(NH2C3H6SiCl3)

Silicon wafer

CH3

23Å

6.5Å

30nmamine

APhMSOTS

octadecyltrichlorosilanes (OTS) P-aminophenyltrimethoxysilanes (APhMS)

Page 6: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

Island Formation of Co-Adsorbed Self-assembling

SurfactantsAPhMS islands in OTS Matrix

0

5

10

15

20

25

30

10 13 15 18 22 25 28 31 34 37 40 43 50

Diameter (nm)

35 islands/µm2, average diameter: 28 nm,distribution width: 10 nm

3:1 OTS:APhMS; Chloroform

2mM total concentration of silane

Page 7: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

Effect of Composition2 mM CHCl3 solution, deposition time; 2 hrs

OTS/APMS=1:3 OTS Pillars

OTS/APMS=3:1 APhMS islands

OTS/APMS=1:1 OTS Pillars

Page 8: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

Contact Angles: 80 Contact Angles: 41

Solvent Effect2 mM solution (OTS/APhMS=1:1), deposition time: 2 hrs,

CHCl3Toluene

CCl4 THF

Contact Angles: 103 Contact Angles: 98

Page 9: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

Effect of Solvent on Composition

Monolayer Composition in Mixed Adsorption is a balance between

• relative affinity of surfactants to the depositing solvent

• interfacial energy between the film formed and the depositing solution

Page 10: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

Sequential Adsorption for Mixed Monolayers

Partial OTS monolayers with desired islands Low density surrounding OTS islands at100C.

SOLVENT

SUBSTRATE

OTS SOLUTION

SUBSTRATE

SECOND SILANE SOLUTION

Rinse

Fill surrounding with second silane

Page 11: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

Temperature Effect

100C

~220CReduced Secondary growth at low temperatures

Page 12: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

Control of Morphology and Chemical Functionality at

Nanometer Scale

Mixed monolayer of OTS and BrUTS(BrC11H22SiCl3)

Silicon wafer

CH3

23Å

15Å

30nm to 10 µm Br

10 2

Height HeightFriction Friction

Page 13: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

Control of Morphology at Angstrom Scale

Mixed monolayer of OTS and DTS(C10H21SiCl3)

Silicon wafer

CH3

23Å

14Å

30nm to 10 µm

10

Height Friction

Page 14: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

Nano-dots

5

Low OTS concentration & low deposition time

Page 15: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

pH 8. . .

Imaging at loads of ~ 1.5 GPa (70 nN). . .3 scans

unworn unwornworn. . . leads to rapid pit formation and facile dissolution

Page 16: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

pH 5. . . Imaging at loads of ~ 0.7 GPa (58 nN). . .10 scans

. . . friction appears to be decreasing. . . surface roughens by ~ 0.5 Å

Page 17: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

. . . charging followed by surface atom abstraction is observed

nativeIn wear

pH 5. . . Imaging at loads of ~ 1.6 GPa (96 nN). . . 10 scans

Page 18: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

pH 3. . . Imaging at loads of ~ 0.7 GPa (56 nN). . .83 scans!

. . . no wear to be found, even with increased loads!

. . . no charging due to low [OH-].

Page 19: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

Studies of Lubricant Films: Functionalization of AFM tip and Particle Surface

CH3(CH2)17-Si(OCH2CH3)3

(OTE)

Functionalization with organosilanes:

Si(100)

Contact angle with water on OTE modified particle films

- Forms self-assembled monolayers on silica.- Have been used in MEMS devices.

AFM Tip

Page 20: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

Thiols on Au…

Salmeron and Liu

Page 21: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

Nanopatterning of Surfaces

Page 22: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

AFM STM

Page 23: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

Liu et al, Acc. Chem. Res. 33 (2000) 457.

C18S/Au

C18S implanted in a C10S/Au

Page 24: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett

Mirkin dip-pen lithography

Allows fab in air!

Amro et al, Langmuir 16 (2000) 3006.

Page 25: Methods Micro-contact printing Monolayer UV mask Micro-lithography Limited by wavelength X ~  m ~ 10nm Nano-writing Phase separated Langmuir-Blodgett