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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 358
Microcrystalline and NanocrystallineSemiconductors
Symposium held November 29-December 2, 1994, Boston, Massachusetts, U.S.A.
EDITORS:
Robert W. Collins
The Pennsylvania State UniversityUniversity Park, Pennsylvania, U.S.A.
Chuang Chuang Tsai
Xerox PARC
Palo Alto, California, U.S.A.
Masataka Hirose
Hiroshima UniversityHiroshima, Japan
Frederick Koch
Technische Universitat Munchen
Garching, Germany
Louis Brus
AT&T Bell Laboratories
Murray Hill, New Jersey, U.S.A.
iMjRlslMATERIALS RESEARCH SOCIETY
Pittsburgh, Pennsylvania
Contents
PREFACE xix
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS xxv
PART I: THEORY OF MOLECULAR CLUSTERS,NANOCRYSTALS, AND POROUS SILICON
FIRST-PRINCIPLES CALCULATION OF THE OPTICAL PROPERTIES
OF NANOCRYSTALLINE SILICON 3
Masahiko Hirao
THEORY OF THE PHYSICAL PROPERTIES OF Si NANOCRYSTALS 13M. Lannoo, C. Delerue, G. Allan, and E. Martin
CALCULATION OF THE ELECTRONIC STRUCTURE OF SILICON
NANOCRYSTALS 25
Nicola A. Hill and K. Birgitta Whaley
ELECTRONIC PROPERTIES OF POROUS SILICON 31
M.R. Beltran, J. Taguena-Martinez, M. Cruz, and C. Wang
EFFECT OF GEOMETRICAL IRREGULARITIES ON THE BAND
GAP OF POROUS SILICON 37
B. Sapoval and S. Russ
EFFECTIVE DIELECTRIC FUNCTION OF POROUS SILICON:
THE TRANSVERSE COMPONENT 43J.E. Lugo, J.A. del Rfo, J. Taguena-Martfnez, and
J.A. Ochoa-Tapia
OPTICAL CHARACTERIZATION OF AN ARRAY OF QUANTUM WIRES 49
G. Gumbs
ELECTRONIC AND STRUCTURAL PROPERTIES OF SL,:A NOVEL SOLID OF SILICON FULLERENES 55
Susumu Saito and Atsushi Oshiyama
ELECTRONIC PROPERTIES OF SILICON - M BINARY CLUSTERS
(M = C & Na) 61A. Nakajima, K. Nakao, M. Gomei, R. Kishi, S. Iwata,and K. Kaya
A MONTE CARLO SIMULATION OF THE STILLINGER-WEBER
MODEL FOR Si-Ge ALLOYS 67Mohamed Laradji, D.P. Landau, and B. Dunweg
A TIGHT-BINDING MODEL FOR MOLECULAR DYNAMICS OF
CARBON-HYDROGEN SYSTEMS 73
G. Kopidakis, C.Z. Wang, CM. Soukoulis, and K.M. Ho
PART II: SYNTHESIS AND PROPERTIES
OF GROUP IV MOLECULAR AND SOLID STATE
CLUSTERS AND NANOCRYSTALS
LUMINESCENCE PROPERTIES OF SILICON CLUSTERS: CHAIN,LADDER AND CUBIC STRUCTURES 81
Yoshihiko Kanemitsu
Invited Paper
v
SS,__Ge_Y ALLOY NANOCLUSTER MATERIALS
CHEMICAL VAPOR DEPOSITION OF SLFL/Ge-HgMIXTURES IN ZEOLITE Y 87
Omer Dag, Alex Kuperman, and Geoffrey A. Ozin
FABRICATION OF PHOTOLUMINESCENT AMORPHOUS PILLAR
SILICON STRUCTURES 93
S. Lazarouk, S. Katsuba, N. Kazuchits, G. de Cesare,S. La Monica, G. Maiello, E. Proverbio, and A. Ferrari
CONTROL OF THE CRYSTALLITE SIZE AND DIELECTRIC TISSUE
IN nc-Si/Si02 PLASMA CVD FILMS: ORIGIN OF THE GREEN/
BLUE AND THE EFFICIENCY OF THE RED PHOTOLUMINESCENCE 99
S. Vepfek, Th. Wirschem, M. RuckschlojS, H. Tamura,and J. Oswald
A NEW METHOD FOR PREPARING Ge NANO-CRYSTALLITESEMBEDDED IN SiN MATRICES Ill
Kunji Chen, Xuexuan Qu, Xinfan Huang, Zhifeng Li,and Duan Feng
RARE-EARTH DOPED SILICON-RICH SILICA: EVIDENCE FOR
ENERGY TRANSFER BETWEEN SILICON MICROCLUSTERS AND
RARE-EARTH IONS 117
A.J. Kenyon, P.F. Trwoga, M. Federighi, and C.W. Pitt
GENERATION AND STRUCTURAL ANALYSIS OF SILICON
NANOPARTICLES 123
Ping Li and Klaus Sattler
LUMINESCENCE FROM SiO, NANOCLUSTERS 127
Paul Wickboldt, Hyeonsik M. Cheong, Dawen Pang,Joseph H. Chen, and William Paul
BLUE LIGHT EMISSION FROM GERMANIUM ULTRAFINE PARTICLES
BY THE GAS EVAPORATION TECHNIQUE 133
Shinji Nozaki, S. Sato, A. Denda, H. Ono, andH. Morisaki
Ge NANOCRYSTALS GROWN ON Si(lll) BY MOLECULAR BEAM
EPITAXY WITH AND WITHOUT CaF2 BUFFER LAYERS 139Peter W. Deelman, Thomas Thundat, and Leo J. Schowalter
FORMATION OF SUBMICRON SINGLE CRYSTAL PARTICLES ANDDOTS BY LASER ABLATION 145
Hong Wu, R.D. Vispute, and J. Narayan
POSSIBLE MECHANISMS FOR PHOTOLUMINESCENCE IN
SPARK-PROCESSED Si 151R.E. Hummel, M.H. Ludwig, and S.-S. Chang
VISIBLE PHOTOLUMINESCENCE FROM SILICON NANOCONSTRICTIONS
FORMED BY HEAVY HYDROGEN IMPLANTATION AND ANNEALING
TREATMENTS 157
L. Pavesi, D. Bisero, F. Corni, S. Frabboni, R. Tonini,and G. Ottaviani
CONTROL OF AND MECHANISMS FOR ROOM TEMPERATURE VISIBLELIGHT EMISSION FROM SILICON NANOSTRUCTURES IN SiO, FORMEDBY Si+ ION IMPLANTATION 163
T. Komoda, J.P. Kelly, A. Nejim, K.P. Homewood,P.L.F. Hemment, and B.J. Sealy
*Invited Paper
vi
COMPOUND SEMICONDUCTOR NANOCRYSTALS FORMED BY
SEQUENTIAL ION IMPLANTATION 169C.W. White, J.D. Budai, J.G. Zhu, S.P. Withrow, R.A. Zuhr,Y. Chen, D.M. Hembree, Jr., R.H. Magruder, and D.O. Henderson
SEMICONDUCTOR NANOCRYSTALS FORMED IN Si02 BY ION
IMPLANTATION 175Jane G. Zhu, C.W. White, J.D. Budai, S.P. Withrow,and Y. Chen
CORRELATION OF SIZE AND PHOTOLUMINESCENCE FOR Ge
NANOCRYSTALS IN SiO, MATRICES 181
CM. Yang, K.V. Shcheglov, M.L. Brongersma, A. Polman,and H.A. Atwater
CORRELATION BETWEEN QUANTUM NANOCRYSTAL PARTICLESIZE AND PHOTOLUMINESCENCE USING RAMAN SCATTERING 187
E.W. Forsythe, E.A. Whittaker, F.H. Pollak, B.S. Sywe, G.S. Tompa,B.A. Khan, J. Khurgin, H.W.H. Lee, F. Adar, and H. Schaffer
INFLUENCE OF THE DISPERSION OF THE SIZE OF THE SiNANOCRYSTALS ON THEIR EMISSION SPECTRA 193
J.B. Khurgin, E.W. Forsythe, S.I. Kim, B.S. Sywe,B.A. Khan, and G.S. Tompa
LATTICE. RELAXATION EFFECTS IN Si AND GaAs NANOCRYSTALS 199X.S. Zhao, Y.R. Ge, J. Schroeder, and P.D. Persans
NONLINEAR OPTICAL PROPERTIES OF SILICON NANOCRYSTALLITES:EFFECTS OF PASSIVATION 205
A.A. Seraphin, F.J. Aranda, E. Werwa, D.V.G.L.N. Rao,and K.D. Kolenbrander
PART III: SYNTHESIS AND PROPERTIES OFII-VI, AND METAL SULFIDE, HALIDE, AND
OXIDE NANOCRYSTALS
*NANOCRYSTALS OF II-VI SEMICONDUCTOR MATERIALS 213Horst Weller, Tobias Vossmeyer, Alexander Eychmuller,Alf Mews, Lynne Katsikas, and Gunter Reck
SYNTHESIS, STRUCTURAL CHARACTERIZATION, AND OPTICAL
SPECTROSCOPY OF CLOSE PACKED CdSe NANOCRYSTALLITES 219C.R. Kagan, C.B. Murray, and M.G. Bawendi
X-RAY ABSORPTION SPECTROSCOPY AND OPTICAL ABSORPTIONSTUDIES OF THE GROWTH OF CdS NANOCRYSTALS IN GLASS 225
P.D. Persans, L.B. Lurio, J. Pant, R.J. Olsson, H. Yukselici,and T.M. Hayes
RAMAN, ABSORPTION, AND PHOTOLUMINESCENCE STUDIESOF A CdS Se,_x SEMICONDUCTOR DOPED COLOR GLASS 229
S.H. Morgan, Z. Pan, R. Mu, and B.H. Long
RESONANT RAMAN SCATTERING IN CdSxSe._x NANOCRYSTALS:ELECTRON-PHONON COUPLING 235
M. Silvestri, L.W. Hwang, P. Persans, and J. Schroeder
TRAP STATES IN Cd(S,Se) NANOCRYSTALS PROBED BY
PHOTOMODULATION SPECTROSCOPY 241Kevin L. Stokes and Peter D. Persans
*Invited Paper
vii
TRANSPARENT SOL-GEL MATRICES DOPED WITH
QUANTUM SIZED PbS PARTICLES 247
T. Gacoin, J.P. Boilot, M. Gandais, C. Ricolleau, and
M. Chamarro
SYNTHESIS OF PbS SEMICONDUCTOR MICROCRYSTALLITES
IN SITU IN REVERSE MICELLES 253
O. de Sanctis, K. Kadono, H. Tanaka, and T. Sakaguchi
MORPHOLOGY-DEPENDENT SPECTROELECTROCHEMICALBEHAVIOR
OF PbS NANOPARTICULATE FILMS GROWN UNDER SURFACTANT
MONOLAYERS 259
Yongchi Tian, Changjun Wu, Nicholas Kotov, and
Janos H. Fendler
OPTICAL PROPERTIES OF LEAD SULFIDE NANOCLUSTERS: EFFECTS
OF SIZE, STOICHIOMETRY AND SURFACE ALLOYING 265
D.E. Bliss, J.P. Wilcoxon, P.P. Newcomer, and G.A. Samara
QUANTUM CONFINEMENT IN COATED SEMICONDUCTOR
NANO-PARTICLES 271
H.S. Zhou, H. Sasahara, I. Honma, H. Komiyama,H. Sasabe, and J.W. Haus
OPTICAL FEATURES OF NANOSIZE IRON AND MOLYBDENUM
SULFIDE CLUSTERS 277
J.P. Wilcoxon, G. Samara, and P. Newcomer
SOME NATURAL THREE- AND LOWER-DIMENSIONAL
SEMICONDUCTOR SYSTEMS WITH METAL-HALIDE UNITS 283
George C. Papavassiliou, LB. Koutselas, A. Terzis,and C.P. Raptopoulou
"LUMINESCENCE AND RESONANCE RAMAN SPECTROSCOPY OF
INDIRECT EXCITONS IN AgBr NANOCRYSTALS 289S. Pawlik, H. Stolz, and W. von der Osten
QUANTUM CONFINEMENT EFFECTS ON 100-400 A DIAMETER
SILVER BROMIDE MICROCRYSTALS 301
Michal liana Freedhoff, George McLendon, and Alfred Marchetti
CONTROLLED RECRYSTALLIZATION OF HEMATITE FROM
TWO HIGHLY DIFFERENT PHASES OF FERRIC TRIHYDROXIDE 307
Georges Denes, P. Kabro, and M.C. Madamba
PART IV: SYNTHESIS, SURFACE EFFECTS,AND PROCESS/PROPERTY CORRELATIONS
FOR POROUS SILICON
EXTENDED QUANTUM MODEL FOR POROUS SILICON
FORMATION 315
H. Munder, St. Frohnhoff, M.G. Berger, M. Marso,M. Thonissen, R. Arens-Fischer, and H. Liith
NON-DESTRUCTIVE CHARACTERIZATION OF POROUS SILICON
USING X-RAY REFLECTIVITY 321
E. Chason, T.R. Guilinger, M.J. Kelly, T.J. Headley,and A.J. Howard
*Invited Paper
viii
FORMATION AND PROPERTIES OF POROUS Si SUPERLATTICES 327M.G. Berger, R. Arens-Fischer, St. Frohnhoff, C. Dieker,K. Winz, H. Miinder, H. Liith, M. Arntzen, and W. Theiss
PREPARATION, PROPERTIES AND APPLICATIONS OF FREE-STANDINGPOROUS SILICON FILMS 333
J. von Behren, L. Tsybeskov, and P.M. Fauchet
THE FORMATION OF POROUS SILICON LAYERS FORMED IN A
NON-AQUEOUS ELECTROLYTE 339Melissa M. Rieger and Paul A. Kohl
COMBINED OPTICAL, SURFACE AND NUCLEAR MICROSCOPICASSESSMENT OF POROUS SILICON FORMED IN HF-ACETONITRILE 345
Z.C. Feng, Z. Chen, K.R. Padmanabhan, K. Li, A.T.S. Wee,J. Lin, K.L. Tan, K.T. Yue, A. Bhat, and A. Rohatgi
THE EFFECT OF STARTING SILICON CRYSTAL STRUCTURE ON
PHOTOLUMINESCENCE INTENSITY OF POROUS SILICON 351W.B. Dubbelday, S.D. Russell, and K.L. Kavanagh
PECULIARITY OF POROUS SILICON FORMED IN THE
TRANSITION REGIME 357S. Lazarouk, V. Chumash, E. Fazio, S. La Monica,G. Maiello, and E. Proverbio
COMPARISON OF POROUS SILICON ETCHED GENTLY AND
UNDER ILLUMINATION 363Adam A. Filios and Raphael Tsu
EFFECT OF RAPID THERMAL OXIDATION ON BLUE AND RED
LUMINESCENCE BANDS OF POROUS SILICON 369S. Sen, A.J. Kontkiewicz, A.M. Kontkiewicz, G. Nowak,J. Siejka, P. Sakthivel, K. Ahmed, P. Mukherjee,S. Witanachchi, A.M. Hoff, and J. Lagowski
Er-IMPLANTED POROUS SILICON: A NOVEL MATERIAL FOR
Si-BASED INFRARED LEDs 375
Fereydoon Namavar, F. Lu, C.H. Perry, A. Cremins,N.M. Kalkhoran, J.T. Daly, and R.A. Soref
POST-ANODIZATION IMPLANTATION AND CVD TECHNIQUESFOR PASSIVATION OF POROUS SILICON 381
S.P. Duttagupta, L. Tsybeskov, P.M. Fauchet,E. Ettedgui, and Y. Gao
CHEMICAL MODIFICATION OF THE POROUS SILICON SURFACE 387Eric J. Lee, James S. Ha, and Michael J. Sailor
INVESTIGATION OF CHEMICAL ADSORBATE EFFECTS ON BLUEAND RED EMITTING POROUS SILICON SAMPLES 393
Julie M. Rehm, George L. McLendon, Leonid Tsybeskov,and Philippe M. Fauchet
FTIR STUDIES OF CH3OH ON POROUS SILICON 399John A. Glass, Jr., Edward A. Wovchko, and John T. Yates, Jr.
ix
PART V: STRUCTURAL, OPTICAL, ANDTHERMAL PROPERTIES OF POROUS SILICON
*SIZE, SHAPE, AND CRYSTALLINITY OF LUMINESCENT STRUCTURESIN OXIDIZED Si NANOCLUSTERS AND H-PASSIVATED POROUS Si 407
S. Schuppler, S.L. Friedman, M.A. Marcus, D.L. Adler,Y.-H. Xie, F.M. Ross, T.D. Harris, W.L. Brown, YJ. Chabal,P.J. Szajowski, E.E. Chaban, L.E. Brus, and P.H. Citrin
RECIPROCAL SPACE ANALYSIS OF THE MICROSTRUCTURE OFLUMINESCENT AND NONLUMINESCENT POROUS SILICON FILMS 417
S.R. Lee, J.C. Barbour, J.W. Medernach, J.O. Stevenson,and J.S. Custer
DIMENSIONS OF LUMINESCENT POROUS SILICON BY THERMAL
EFFUSION OF HYDROGEN 423A. Nikolov, V. Petrova-Koch, G. Polisski, and F. Koch
CONTRIBUTION OF THE NANOCRYSTALLITES AND THEIR INTERFACES
TO THE OPTICAL RESPONSE OF POROUS SILICON LAYERS 429U. Rossow, U. Frotscher, W. Richter, H. Muender,M. Thoennissen, and M. Berger
PROBING OPTICAL TRANSITIONS IN POROUS SILICON BY
REFLECTANCE SPECTROSCOPY IN THE NEAR INFRARED, VISIBLEAND UV 435
W. Thei/3, R. Arens-Fischer, M. Arntzen, M.G. Berger,S. Frohnhoff, S. Hilbrich, and M. Wernke
COMPARISON OF THE BAND GAP OF POROUS SILICON AS MEASURED
BY PHOTOELECTRON SPECTROSCOPY AND PHOTOLUMINESCENCE 441
T. van Buuren, S. Eisebitt, S. Patitsas, S. Ritchie,T. Tiedje, J.F. Young, and Yuan Gao
PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OFPOROUS SILICON 447
A. Kux and M. Ben Chorin
*ELECTRON SPIN RESONANCE INVESTIGATIONS ON POROUS SILICON 453
B.K. Meyer, D.M. Hofmann, P. Christmann, W. Stadler,A. Nikolov, A. Scharmann, and A. Hofstaetter
*THE SPECTROSCOPY OF POROUS SILICON 465
P.D.J. Calcott, K.J. Nash, L.T. Canham, and M.J. Kane
LOCALIZED NATURE OF PHOTOLUMINESCENCE FROM ANODICALLYOXIDIZED POROUS SILICON 477
T. Ito, K. Furuta, T. Yoneda, O. Arakaki, A. Hatta, and A. Hiraki
THE VISIBLE AND THE INFRARED LUMINESCENCE BANDS AS
A TOOL FOR CHARACTERIZATION OF THE POROUS SILICON
BANDSTRUCTURE 483V. Petrova-Koch, T. Muschik, G. Polisski, and D. Kovalev
ORIGIN OF THE INFRARED BAND FROM POROUS SILICON 489
G. Mauckner, J. Hamann, W. Rebitzer, T. Baier,K. Thonke, and R. Sauer
LIGHT CONTROLLED PHOTOLUMINESCENCE RELAXATION INPOROUS SILICON 495
R. Czaputa, R. Fritzl, and A. Popitsch
*Invited Paper
x
QUENCHING AND RECOVERY OF THE PHOTOLUMINESCENCEIN POROUS Si AFTER PULSE IR IRRADIATION 501
J. Diener, S. Ganichev, M. Ben-Chorin, D. Kovalev,V. Petrova-Koch, and F. Koch
*PHOTOLUMINESCENCE QUENCHING OF POROUS SILICON 507Diana L. Fisher, Aurilee Gamboa, Jessica Harper,Jeffrey M. Lauerhaas, and Michael J. Sailor
LOCALIZED STATES AND POROUS SILICON LUMINESCENCE 519
V.M. Dubin, F. Ozanam, and J.-N. Chazalviel
CARRIER DYNAMICS IN POROUS SILICON: FROM THE
FEMTOSECOND TO THE SECOND 525
Philippe M. Fauchet
EXCITATION TIME DEPENDENCE OF LUMINESCENCE DECAYIN THERMALLY OXIDIZED POROUS Si 537
K. Shiba, S. Miyazaki, and M. Hirose
SIMULTANEOUS DETECTION OF RADIATIVE AND NON-RADIATIVERECOMBINATION IN POROUS SILICON 543
Vytautas Grivickas and Jan Linnros
EXPERIMENTS AND MONTE CARLO SIMULATIONS ON THE
RECOMBINATION DYNAMICS IN POROUS SILICON 549L. Pavesi and H. Eduardo Roman
TEMPERATURE DEPENDENCE OF STRESSES AND H DESORPTIONIN POROUS SILICON 555
Y. Diawara, J.F. Currie, A. Yelon, V. Petrova-Koch,and A. Nikolov
THE THERMAL CONDUCTIVITY OF POROUS SILICON 561W. Lang, A. Drost, P. Steiner, and H. Sandmaier
PART VI: ELECTRONIC AND ELECTROCHEMICAL
PROPERTIES AND APPLICATIONS OF
NANOCRYSTALS AND POROUS SILICON
MODELLING THE MULTIPLICITY OF CONDUCTANCE STRUCTURESIN CLUSTERS OF SILICON QUANTUM DOTS 569
D.W. Boeringer and R. Tsu
ELECTRICAL TRANSPORT IN MESOPOROUS SILICON LAYERS 575M. Ben-Chorin, S. Grebner, F. Wang, R. Schwarz,A. Nikolov, and F. Koch
INVESTIGATION OF ELECTRONIC PROPERTIES OF
POROUS SILICON BY THE PULSED SURFACE
PHOTOVOLTAGE TECHNIQUE 581Th. Dittrich and H. Flietner
PHOTOVOLTAIC CHARACTERIZATION OF TRAPPING
IN POROUS SILICON 587D.W. Boeringer and R. Tsu
INVESTIGATION OF EFFICIENCY IMPROVEMENT ONSILICON SOLAR CELLS DUE TO POROUS LAYERS 593
Gregory Sun, Yuxin Li, Yicheng Lu, Babar Khan,and Gary S. Tompa
*Invited Paper
xi
GAS SENSOR USING AN ALUMINIUM-POROUS SILICON JUNCTIONAPPLICATION TO THE DETECTION OF NON-ZERO MOLECULAR
DIPOLE MOMENT 599
D. Stievenard and D. Deresmes
POROUS SILICON USED AS AN INITIATOR IN
POLYMERIZATION REACTIONS 605
Julie L. Heinrich, Alice Lee, and Michael J. Sailor
SPECTRAL RESPONSE OF PHOTOELECTROCHEMICAL CELLS
BASED ON NANOCRYSTALLINE SEMICONDUCTOR FILMS 611
M.C. Rossi, R. Vincenzoni, and F. Galluzzi
PART VII: ELECTROLUMINESCENT APPLICATIONS
OF NANOCRYSTALS AND POROUS SILICON
*ON THE ORIGIN OF THE ELECTRICALLY-INDUCED SPECTRALSHIFT OF POROUS SILICON PHOTO- AND ELECTRO- LUMINESCENCE 619
A. Bsiesy, M.A. Hory, F. Gaspard, R. Herino, M. Ligeon,F. Muller, R. Romestain, and J.C. Vial
POROUS SILICON AS AN ULTRAVIOLET LIGHT SOURCE 629
F. Kozlowski, B. Huber, P. Steiner, H. Sandmaier,and W. Lang
BLUE AND GREEN ELECTROLUMINESCENCE FROM
POROUS MATERIALS 635
H. Mimura, T. Matsumoto, and Y. Kanemitsu
NEAR-INFRARED EMISSION FROM A POROUS SILICON DEVICE 641
J. Penczek, A. Knoesen, H.W.H. Lee, and R.L. Smith
MICRON-SIZE AND SUBMICRON-SIZE LIGHT-EMITTING POROUS
SILICON STRUCTURES 647S.P. Duttagupta, P.M. Fauchet, C. Peng, S.K. Kurinec,K. Hirschman, and T.N. Blanton
LIGHT EMISSION VERSUS EXCITATION FROM POROUS
STRUCTURES IN ION-IMPLANTED SILICON 653E. Vazsonyi, I. Barsony, T. Lohner, M. Fried,J. Erostyak, M. Racz, and F. Paszti
VISIBLE ELECTROLUMINESCENCE FROM Al-POROUS SILICON
REVERSE BIAS DIODES FORMED ON THE BASE OF DEGENERATEN-TYPE SILICON 659
S. Lazarouk, V. Bondarenko, P. Pershukevich,S. La Monica, G. Maiello, and A. Ferrari
DEPOSITING METALS INTO POROUS SILICON-THE
IMPACT ON LUMINESCENCE 665
P. Steiner, F. Kozlowski, and W. Lang
THE INFLUENCE OF LOCAL AMBIENT ATMOSPHERE ON THE
ELECTROLUMINESCENT STABILITY OF POROUS SILICON DIODES 671
Libing Zhang, Jeffery L. Coffer, Bruce E. Gnade,DaXue Xu, and Russell F. Pinizzotto
STABILIZATION OF ELECTROLUMINESCENCE AND PHOTOLUMINESCENCEOF POROUS N-SILICON BY CHEMICAL OXIDATION IN Yli02 677
F. Kozlowski, W. Wagenseil, P. Steiner, and W. Lang
*Invited Paper
xii
PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN PARTIALLY
OXIDIZED POROUS SILICON 683
L. Tsybeskov, S.P. Duttagupta, and P.M. Fauchet
CARRIER TRANSPORT IN POROUS SILICON LIGHT-EMITTING
DIODES 689
C. Peng, P.M. Fauchet, K.D. Hirschman, and S.K. Kurinec
OPTOELECTRONIC EFFECTS IN POROUS SILICON RELATED TO
THE VISIBLE LUMINESCENCE MECHANISM 695
N. Koshida, H. Koyama, T. Ozaki, M. Araki, T. Oguro,and H. Mizuno
UV-VISIBLE-IR ELECTROLUMINESCENCE FROM Si AND Ge
NANOCRYSTALS IN A WIDER BANDGAP MATRIX 701
G.S. Tompa, D.C. Morton, B.S. Sywe, Y. Lu, E.W. Forsythe,J.A. Ott, D. Smith, J. Khurgin, and B.A. Khan
SIZE DEPENDENT ELECTROLUMINESCENCE FROM CdSe
NANOCRYSTALLITES (QUANTUM DOTS) 707
B.O. Dabbousi, O. Onitsuka, M.F. Rubner, and M.G. Bawendi
ELECTROLUMINESCENCE OF Yb-DOPED InP 713
A.K. Alshawa, H.J. Lozykowski, and I. Brown
PART VIII: NANOCRYSTALLINE AND
MICROCRYSTALLINE FILMS AND THEIR APPLICATIONS
PREPARATION OF NANOCRYSTALLINE SILICON BY PULSED
PLASMA PROCESSING 721
S. Oda and M. Otobe
MICROCRYSTALLINE SILICON THIN FILM GROWTH AND
SIMULTANEOUS ETCHING OF AMORPHOUS MATERIAL 733
M. Heintze, R. Zedlitz, and W. Westlake
GRAIN GROWTH IN DISPERSIONS OF ^ic-Si IN a-Si:H 739
M. Taguchi and S. Wagner
LARGE GRAIN SIZE AND HIGH DEPOSITION RATE FOR
MICROCRYSTALLINE SILICON PREPARED BY VHF-GD 745
P. Hapke, F. Finger, M. Luysberg, R. Carius, and
H. Wagner
STRUCTURAL AND ELECTRICAL PROPERTIES OF UNDOPED
MICROCRYSTALLINE SILICON GROWN BY 70 MHz AND
13.56 MHz PECVD 751
R. Fluckiger, J. Meier, G. Crovini, F. Demichelis,F. Giorgis, C.F. Pirri, E. Tresso, J. Pohl, V. Rigato,S. Zandolin, and F. Caccavale
SPIN RESONANCE STUDIES ON FREE ELECTRONS AND DEFECTSIN MICROCRYSTALLINE SILICON 757
C. Malten, F. Finger, P. Hapke, T. Kulessa, C. Walker,R. Carius, R. Fluckiger, and H. Wagner
PREPARATION AND OPTICAL PROPERTIES OF ULTRATHIN
SILICON FILMS 763R.W. Collins, Hien V. Nguyen, Ilsin An, Yiwei Lu,and M. Wakagi
*Invited Paper
xiii
LUMINESCENT HYDROGENATED NANOCRYSTALLINESILICON FILMS 769
Y. Wang, F. Yun, X.B. Liao, G.Q. Pan, G.L. Kong,and B. Yang
THIN FILMS OF SEMICONDUCTING SnSi ALLOYS GROWNBY PULSED LASER DEPOSITION 775
Randolph E. Treece, J.S. Horwitz, D.B. Chrisey,J. Tang, and R.S. Williams
DEPOSITION OF MICROCRYSTALLINE Si,Ge Otc-Si.Ge) ALLOYSBY REACTIVE MAGNETRON SPUTTERING 781
S.M. Cho, D. Wolfe, S.S. He, K. Christensen,D.M. Maher, and G. Lucovsky
THE STRUCTURE AND COMPOSITION OF DOPED SILICONOXYCARBIDE MICROCRYSTALLINE LAYERS PRODUCED BY
SPATIAL SEPARATION TECHNIQUES 787
R. Martins, M. Vieira, I. Ferreira, and E. Fortunato
STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIESOF <p> jiC-SiC:H THIN FILMS DEPOSITED BY THE VHF-GD 793
Roger Flvickiger, J. Meier, A. Shah, J. Pohl,M. Tzolov, and R. Carius
MICROCRYSTALLINE /3-SiC GROWTH ON Si BY ECR-CVD AT 500°C 799Kuan-Lun Cheng, Chih-Chien Liu, Huang-Chung Cheng,Chiapyng Lee, and Tri-Rung Yew
POROUS SILICON: A POSSIBLE BUFFER LAYER FOR DIAMONDGROWTH ON SILICON SUBSTRATES 805
Zhaohui Liu, B.Q. Zong, and Zhangda Lin
CHARACTERIZATION OF FLAME GROWN DIAMOND FILMS BY
LUMINESCENCE AND EPR 811
L. Pereira, E. Pereira, C. Tavares, M. Neto, A. Cremades,J. Piqueras, J. Jimenez, and P. Martin
MICROCRYSTALLINE CUBIC BORON NITRIDE/AMORPHOUS
HYDROGENATED BORON NITRIDE MIXED PHASE THIN FILMS 817
Shu-Han Lin and Bernard J. Feldman
PART IX: MULTILAYERED AND
MICROSTRUCTURED FILMS
*VISIBLE LIGHT EMISSION IN SILICON-INTERFACE
ADSORBED GAS SUPERLATTICES 825
Raphael Tsu, Jonder Morais, and Amanda Bowhill
OBSERVATION OF QUANTUM SIZE DEPENDENT BLUE SHIFT
IN THE LUMINESCENCE OF RECRYSTALLIZED Si/SiN
SUPERLATTICES 833D.A. Griitzmacher, E.F. Steigmeier, H. Auderset, R. Morf,B. Delley, and R. Wessicken
TRANSMISSION ELECTRON MICROSCOPY OBSERVATION OF
CONSTRAINED CRYSTALLIZATION IN a-Si:H/a-SiNX:HMULTILAYER FILM 839
Xinfan Huang, Weihua Shi, Kunji Chen, Shidong Yu,and Duan Feng
*Invited Paper
xiv
ELECTRICAL CHARACTERISTICS OF ULTRA-THIN MULTI-LAYERS
OF POLY-Si AND SILICON DIOXIDE 845Kevin K. Chan, Young H. Lee, and Carol L. Stanis
LUMINESCENCE PROPERTIES OF SILICON OXYNITRIDE FILMS 851
T. Fischer, T. Muschik, R. Schwarz, D. Kovalev, and F. Koch
X-RAY DIFFRACTION STUDY OF CLUSTERS IN a-tC FILMS 857L.J. Martinez-Miranda, T.A. Friedmann, J.P. Sullivan,M.P. Siegal, T.W. Mercer, N.J. DiNardo, and F. Fang
SURFACE STRUCTURE OF TETRAHEDRAL-COORDINATED AMORPHOUSDIAMOND-LIKE CARBON FILMS GROWN BY PULSED LASER DEPOSITION 863
T.W. Mercer, N.J. DiNardo, L.J. Martinez-Miranda, F. Fang,T.A. Friedmann, J.P. Sullivan, and M.P. Siegal
PART X: PREPARATION, CHARACTERIZATION, AND
APPLICATIONS OF POLYCRYSTALLINE FILMS
CONTROL OF GRAIN SIZE AND TEXTURE OF POLY-Si WITH ATOMICHYDROGEN UNDER IN SITU ELLIPSOMETRIC OBSERVATION 871
K. Nakamura, T. Akasaka, D. He, and I. Shimizu
EARLY STAGE OF POLYCRYSTALLINE GROWTH OF Ge AND SiGe BYREACTIVE THERMAL CVD FROM GeF4 AND Si2H6 877
Jun-Ichi Hanna, Takayuki Ohuchi, and Masaji Yamamoto
THIN FILM POLYCRYSTALLINE Si BY CS SOLUTION GROWTH
TECHNIQUE 883
Richard L. Wallace, Wayne A. Anderson, and K.M. Jones
THE CRYSTALLINE QUALITY OF EPITAXIAL Si LAYERS SOLUTION
GROWN ON POLYCRYSTALLINE Si SUBSTRATES 889
M. Albrecht, B. Steiner, Th. Bergmann, A. Voigt, W. Dorsch,H.P. Strunk, and G. Wagner
HIGH-QUALITY POLYCRYSTALLINE SILICON THIN FILM PREPAREDBY A SOLID PHASE CRYSTALLIZATION METHOD 895
T. Baba, T. Matsuyama, T. Sawada, T. Takahama,K. Wakisaka, and S. Tsuda
GRAIN BOUNDARY LOCATION-CONTROLLED POLY-Si FILMS FORTFT DEVICES OBTAINED VIA NOVEL EXCIMER LASER PROCESS 903
H.J. Kim and James S. Im
LASER DOPING AND CRYSTALLIZATION OF AMORPHOUSSILICON THIN FILMS 909
J.B. Boyce, G.B. Anderson, P.G. Carey, D.K. Fork, R.I. Johnson,P. Mei, S.E. Ready, and P.M. Smith
Nd-YAG LASER INDUCED CRYSTALLIZATION ON a-Si:H THIN FILMS 915
J. Carvalho, I. Ferreira, B. Fernandes, J. Fidalgo, and R. Martins
EFFECT OF DEPOSITION TEMPERATURE ON THE PHOTORESPONSE OFCRYSTALLIZED HYDROGENATED AMORPHOUS SILICON FILMS 921
Nagarajan Sridhar, D.D.L. Chung, W.A. Anderson, and J. Coleman
CARRIER TRANSPORT IN POLYCRYSTALLINE AND AMORPHOUS SILICONTHIN FILM TRANSISTORS 927
T. Sameshima, M. Sekiya, M. Hara, N. Sano, and A. Kohno
XV
STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF UNDOPED
POLY-Si OXIDES 933
T. Sakamoto, H. Tokioka, S. Takanabe, T. Kubota,Y. Niwano, Y. Goto, H. Namizaki, O. Wada, and H. Kurokawa
EFFECT OF THE HETERO-INTERFACE ON THE PHOTORESPONSE
OF a-Si/c-Si SOLAR CELLS 939
B. Jagannathan, J. Yi, R. Wallace, and W.A. Anderson
DIFFUSION BEHAVIOR OF B-, As- AND Sb-DOPANTS IN
THIN EPITAXIAL LAYERS 945
W.H. Krautschneider, F. Lau, H. Gossner, and
H. Schaefer
IMPROVED SiCr RESISTOR PERFORMANCE BY MEANS OF RAPID
THERMAL PROCESSING 951Pirouz Maghsoudnia
PART XI: SINGLE CRYSTAL DOTS, WIRES,HETEROSTRUCTURES, AND SUPERLATTICES:
THEORY AND EXPERIMENT
SCALABLE FABRICATION AND OPTICAL CHARACTERIZATIONOF nm Si STRUCTURES 957
Saleem H. Zaidi, An-Shyang Chu, and S.R.J. Brueck
FORMATION OF HIGHLY-UNIFORM AND DENSELY-PACKED ARRAYS
OF GaAs DOTS BY SELECTIVE EPITAXY 969Charles S. Tsai, Robert B. Lee, and Kerry J. Vahala
DETERMINATION OF THE STRAIN STATUS OF GaAs/AlAs
QUANTUM WIRES AND QUANTUM DOTS 975
A.A. Darhuber, G. Bauer, P.D. Wang, Y.P. Song,CM. Sotomayor Torres, and M.C. Holland
PHOTOLUMINESCENCE OF A SINGLE-CRYSTAL SILICON
QUANTUM WELL 981
Peter N. Saeta and Alan C. Gallagher
CARRIER CONFINEMENT EFFECTS IN EPITAXIAL SILICONQUANTUM WELLS PREPARED BY MOCVD 987
H. Paul Maruska, R. Sudharsanan, Eric Bretschneider, Albert Davydov,J.E. Yu, Balu Pathangey, K.S. Jones, and Timothy J. Anderson
CHARACTERIZATION OF HIGH Ge CONTENT SiGe HETEROSTRUCTURES
AND GRADED ALLOY LAYERS USING SPECTROSCOPIC ELLIPSOMETRY 993
A.R. Heyd, S.A. Alterovitz, and E.T. Croke
LUMINESCENCE PROPERTIES OF PERIODIC DISORDERED
THIN LAYER GaAs/AlAs SUPERLATTICES 999
Ruth Y.A. Zhang, J. Strozier, C. Horton, and A. Ignatiev
BAND OFFSETS OF InAsJ> JInP STRAINED LAYER QUANTUMWELLS GROWN BY LP-MOVPE USING TBAs 1005
M. Beaudoin, R.A. Masut, L. Isnard, P. Desjardins, A. Bensaada,G. L'Esperance, and R. Leonelli
ELECTRONIC STATES IN Cd, ZnTe/CdTe STRAINED LAYER COUPLED
DOUBLE QUANTUM WELLS AND THEIR PHOTOLUMINESCENCE 1011
Tiesheng Li, H.J. Lozykowski, and J. Reno
*Invited Paper
xvi
PHOTOLUMINESCENCE STUDIES OF [(CdSeUZnSeVL-ZnSeTeMULTIPLE QUANTUM WELLS UNDER HIGH PRESSURE 1017
Z.P. Wang, Z.X. Liu, H.X. Han, J.Q. Zhang, G.H. Li,Z.L. Peng, and S.X. Yuan
EPITAXIAL GROWTH OF ALUMINUM NITRIDE ON SAPPHIRE
AND SILICON 1023
K. Dovidenko, S. Oktyabrsky, J. Narayan, and
M. Razeghi
CHARACTERIZATION OF THE THIN OXIDE-NITRIDE-OXIDE (ONO)STRUCTURE USING SPECTROSCOPIC ELLIPSOMETRY 1029
Leo M. Asinovsky and Steve Zierer
USE OF QUANTUM-WELL SUPERLATTICES TO INCREASE THE
THERMOELECTRIC FIGURE OF MERIT: TRANSPORT AND
OPTICAL STUDIES 1035
L.D. Hicks, X.X. Bi, and M.S. Dresselhaus
MAGNETIC PROPERTIES OF HEISENBERG ANTIFERROMAGNETICEuTe/PbTe SUPERLATTICES 1041
J.J. Chen, G. Dresselhaus, M.S. Dresselhaus, G. Springholz,and G. Bauer
EFFECTS OF LANDAU LEVEL COUPLING ON THE MAGNETIC BANDSTRUCTURE FOR ELECTRONS IN A TWO-DIMENSIONAL HEXAGONAL
LATTICE 1047
O. Kuhn, V. Fessatidis, H.L. Cui, and N.J.M. Horing
AUTHOR INDEX 1053
SUBJECT INDEX 1059
xvii