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MICROELECTRONIC CIRCUIT DESIGN
Fifth Edition Richard C. Jaeger and Travis N. Blalock
Answers to Selected Problems – Updated 07/05/15 Chapter 1 1.5 1.52 years, 5.06 years
1.6 1.95 years, 6.52 years
1.9 402 MW, 1.83 MA
1.11 19.53 mV/bit, 100111012
1.13 2.441 mV, 5.00 V, 5.724 V
1.15 11 bits, 20 bits
1.17 0.0075 A, 0.003 cos (1000t) A
1.20 vDS = [5 + 2 sin (2500t) + 4 sin (1000t)] V
1.22 6.12 V, 1.88 V, 78.4 µA, 125 µA
1.23 100 µA, 100 µA, 8.2 V
1.25 39.8 Ω, vi
1.28 (a) 75 kΩ, 89.6 vi
1.30 2 MΩ, 1.00 x 108 ii
1.31 (c) 4 kΩ
1.38 50/−12°, 10/−45°
1.40 -82.4 sin 750πt mV, 11.0 sin 750πt µA
1.42 1 + R2/R1
1.44 -1.875 V, -2.500 V
1.46 Band-pass amplifier
1.48 50.0 sin (2000πt) + 30.0 cos (8000 πt) V
1.50 0 V
1.52 [4653 Ω, 4747 Ω], [4465 Ω, 4935 Ω], [4230 Ω, 5170 Ω]
1.57 6200 Ω, 4.96 Ω/oC
2
1.64 3.29, 0.995, −6.16; 3.295, 0.9952, −6.155
Chapter 2 2.3 500 mA
2.4 144 Ω, 287 Ω
2.6 305.2 K
2.7
€
For Ge : 2.63 x 10-4 / cm3, 2.27 x 1013 / cm3, 8.04 x 1015 / cm3,
2.10
€
−1.75x106 cm s , + 6.25x105 cm s , 2.80x104 A cm2 , 1.00x10−10 A cm2
2.11 1.60 MA/cm2, 160 pA/cm2
2.12 4 ΜΑ/cm2
2.16 316.6 K
2.21 Donor, acceptor
2.22 100 V/cm
2.23 1800 atoms
2.24 p-type, 7 x 1018/cm3, 14.3/cm3, 5.28 x 109/cm3, 7.54 x 10-10/cm3
2.27 4 x 1017/cm3, 250/cm3
2.29 4 x 1016/cm3, 2.50x105/cm3
2.31 40/cm3, 2.5x1018/cm3, 187 cm2/s, 58.7 cm2/s, p-type, 42.5 mΩ-cm
2.33 104/cm3, 1016/cm3, 727 cm2/s, 153 cm2/s, p-type, 4.08 Ω-cm
2.35 1.25 x 1019/cm3
2.38 5.66 MΩ-cm 2.39 9.67 x 1019/cm3, 1.37 x 1020/cm3
2.42 1.89/Ω-cm, 3.30 x 1017/cm3
2.43 75K: 6.64 mV, 150K: 12.9 mV, 300K: 25.8 mV, 400K: 34.5 mV
2.44 -56.1 kA/cm2
2.45 1.20x105 exp (-5000 x/cm) A/cm2, 12.0 mA
2.49 1.108 µm
2.52 8 atoms, 1.60x10-22 cm3, 5.00x1022 atoms/cm3, 3.73x10-23 g, 1.66x10-24 g/proton
3
Chapter 3
3.1 0.0373 µm, 0.0339 µm, 3.39 x 10-3 µm, 0.979 V, 5.24 x 105 V/cm
3.4 1018/cm3, 102/cm3, 1018/cm3, 102/cm3, 0.921 V, 0.0488 µm
3.6 6.80 V, 1.22 µm
3.9 (b) 640 kA/cm2
3.11 7.50 x 1020/cm4
3.15 (a) 290 K
3.17 339.2 K
3.19 1.34, 3.21 pA
3.20 0.776 V; 0.707 V; 0 A; 9.39 aA, -10.0 aA
3.23 1.34 V; 1.38 V
3.26 [0.535 V, 0.651 V]
3.27 327.97 K, 290.05 K
3.31 0.573 V; 0.528 V
3.32 −1.59 mV/K
3.35 0.691 V, 0.950 µm, 3.74 µm, 11.5 µm
3.37 1500 V
3.39 4 V, 0 Ω
3.42 10.5 nF/cm2; 58.2 pF
3.43 1.00 pF, 25 fC; 12 pF, 0.3 pC
3.46 9.87 MHz; 15.5 MHz
3.47 0.495 V, 0.668 V
3.49 0.708 V, 0.718 V; 0.808 V
3.52 (a) Load line: (450 µA, 0.500 V); SPICE: (443 µA, 0.575 V)
(b) Load line: (-667 µA, -4 V);
(c) Load line: (0 µA, -3 V);
3.55 (a) (1.4 mA, 0.5 V), (e) (-2.1 mA, -4 V)
3.62 Load line: (50 µA, 0.5 V); Mathematical model: (49.9 µA, 0.501 V); Ideal diode
model: (100 µA, 0 V); CVD model: (40.0µA, 0.6 V)
3.66 (a) 0.625 mA, -5 V; 0.625 mA, +3 V; 0 A, 7 V; 0 A, -5 V
4
3.70 (a-c) (270 µA, 0 V), (409 µA, 0 V); (b-c) (190 µA 0.7 V), (345 µA, 0.7 V)
3.71 (c) (0.861 mA, 0.650 V) (0 mA, -1.51 V) (0.951 mA, 0.650 V)
(d) (0 A, -0.450 V) (0 A, -0.950 V) (1.16 mA, 0.650 V)
3.73 (1.50 mA, 0 V) (0 A, -5 V) (1.00 mA, 0 V)
3.76 (b) (IZ, VZ) = (127 µA, 6.00 V)
3.78 (d) 12.6 mW
3.80 1.25 W, 3.50 W
3.85 17.1 V
3.89 -7.91 V, 1.05 F, 17.8 V, 3530 A, 840 A (ΔT = 0.628 ms)
3.91 (b) -7.91V, 904 µF, 17.8 V, 3540 A, 839 A
3.92 10.1 F, 8.6 V, 3.04 V, 1240 A, 16400 A
3.97 -11.7 V, 0.782 F, 25.5 V, 3750 A, 742 A
3.101 5.05 F, 8.6 V, 6.08 V, 1240 A, 6280 A
3.107 1330 µF, 2500 V, 1770 V, 126 A, 1250 A
3.114 5 mA, 4.4 mA, -3.6 mA, 6.39 ns
3.118 (0.969 A, 0.777 V); 0.753 W; 1 A, 0.864 V
3.121 1.11 µm - far infrared; 0.875 µm - near infrared
5
Chapter 4 4.3 10.5 nF/cm2
4.4 43.2 µA/V2, 86.4 µA/V2, 173 µA/V2, 346 µA/V2, ,
4.8 (a) 4.00 mA/V2 (b) 8.00 mA/V2, 15.00 mA/V2
4.11 +840 µA; −880 µA
4.15 23.0 Ω; 50.0 Ω
4.18 125 µA/V2; 1.5 V; enhancement mode; 1.25/1
4.20 0 A, 0 A, 1.88 mA, 7.50 mA, 3.75 mA/V2
4.22 (i) 1.56 mA, saturation region; 460 µA, triode region; 0 A, cutoff
4.23 Saturation; cutoff; saturation; triode; triode; triode
4.27 6.50 mS, 13.0 mS
4.31 2.59 mA; 2.25 mA
4.34 9.03 mA, 18.1 mA, 11.3 mA
4.37 1.13 mA; 1.29 mA
4.39 Triode region
4.40 99.5 µA; 199 µA; 99.5 µA; 199 µA
4.44 0; 0
4.45 5.17 V
4.50 40.0 µA; 72.0 µA; 4.41 µA; 32.8 µA
4.53 581/1; 233/1
4.55 235 Ω; 235 Ω
4.56 0.629 A/V2
4.57 400 µA
4.60 The transistor must be a depletion-mode device and the symbol is not correct.
4.64 (a) 6.91 x 10-8 F/cm2; 1.73 fF
4.66 17.3 pF/cm
4.68 20.7 nF
4.70 (a) 1.35 fF, 0.20 fF, 0.20 fF
4.73 50U, 0.5U, 2.5U, 1V, 0
4.75 (a) 10U, 0.5U, 1.25U, -1V, 0
6
4.76 432 µA/V2, 1.94 mA; 864 µA/V2, 0.972 mA
4.79 6.37 GHz, 2.55 Ghz; 637 GHz, 255 GHz
4.81 Velocity saturation; cutoff; velocity saturation; triode; triode; velocity saturation
4.86 22λ x 12λ; 15.2%
4.89 12λ x 12λ; 13.9%
4.92 (572 µA, 7.94 V); (688 µA, 7.52 V)
4.94 (50.3 µA, 8.43 V) ; (54.1 µA, 8.16 V)
4.101 (a) (55.5 µA, 6.40 V)
4.104 One possiblity: 360 kΩ, 910 kΩ, 3 kΩ, 15 kΩ, 5/1
4.106 (350 µA, 1.7 V); triode region
4.109 (390 µA, 4.1 V); saturation region
4.110 (361 µA, 9.59 V)
4.112 430 kΩ, 1 MΩ, 1.5 kΩ, 3 kΩ
4.114 (109 µA, 1.08 V); (33.5 µA, 0.933 V)
4.117 3.0040 x10-5 A; 2.8217 x 10-5 A
4.120 (73.1 µA, 9.37 V)
4.121 (69.7 µA, 9.49 V); (73.1 µA, 8.49 V)
4.124 (8.22 µA, 7.04 V), (6.78 µA, 7.56 V); (8.40 µA, 6.98 V), (6.92 µA, 7.51 V)
4.126 (93.1 µA, 8.65 V), (78.2 µA, 9.18 V); (98.9 µA, 8.44 V), (82.9 µA, 9.02 V)
4.127 2.25 mA; 16.0 mA; 1.61 mA
4.128 (322 µA, 0.340 V),
4.131 18.1 mA; 45.2 mA; 13.0 mA
4.133 1/3.84
4.134 (153 µA, -3.53 V) ; (195 µA, -0.347 V)
4.136 14.4 mA; 27.1 mA; 10.4 mA
4.137 4.04 V, 10.8 mA; 43.2 mA; 24.5 mA; 98.0 mA
4.139 (1.13 mA, 1.75 V)
4.140 (63.5 µA, -5.48 V) , R ≤ 130 kΩ
4.144 (125 µA, -1.54 V) , (115 µA, -2.49 V)
4.145 22.3 kΩ ! (127 µA, -5.50 V)
7
4.148 (a) One possible design: 220 kΩ, 200 kΩ, 10 kΩ, 10 kΩ
4.149 (b) (260 µA, -12.4 V)
4.150 (32.1 µA, -1.41 V)
4.151 (36.1 µA, 80.6 mV); (32.4 µA, -1.32 V); (28.8 µA, -2.49 V)
4.153 (431 µA, 6.47 V)
4.154 2.5 kΩ, 10 kΩ
4.155 (b) ID = 1.38 mA, IG = 0.62 mA, VS = -0.7 V
4.158 (76.4 µA, 7.69 V), (76.4 µA, 6.55 V), 5.18 V
4.160 (a) (69.5 µA, 3.52 V)
4.163 10.0 V; 10.0 mA, 501 mA; 13.8 V
4.165 15.0 V; 15.0 mA, 1.00 A; 12.2 V
8
Chapter 5 5.4 0.167, 0.667, 3.00, 0.909, 49.0, 0.995, 0.999, 5000
5.5 200 aA; 0.101 fA, −0.115 V
5.6 (d) VBE = VBC (e) IE/IC = -βR/βF (f) 0.374 µA, -149.6 µA, +150 µA, 0.626 V
5.9 4.04 fA
5.11 1.45 mA; −1.45 mA
5.14 -25 µA, -100 µA, +75 µA, 65.7, 1/3, 0, 0.611 V
5.17 1.77 µA, -33.2 µA, +35 µA, 0.663 V
5.20 (a) 868 µA
5.24 0.990, 0.333, 4.04 fA, 12.0 fA
5.26 83.3, 87.5, 100
5.31 39.6 mV/dec, 49.5 mV/dec, 59.4 mV/dec, 69.3 mV/dec
5.32 5 V, 40 V, 5 V
5.33 2.31 mA; 388 µA; 0
5.34 60.7 V
5.38 Cutoff
5.40 saturation, forward-active region, reverse-active region, cutoff
5.44 50.0 aA, 2.67 aA, 52.7 aA
5.45 IC = 81.4 pA, IE = 81.4 pA, IB = 4.28 pA, forward-active region; although IC, IE, IB are all very small, the Transport model still yields IC ≅ βFIB
5.46 79.0, 6.83 fA
5.47 83.3, 1.73 fA
5.48 55.3 µA, 0.683 µA, 54.6 µA
5.49 6.67 MHz; 500 MHz
5.51 1.5, 31.1 aA
5.53 -19.9 µA, 26.5 µA, -46.4 µA
5.56 17.3 mV, 0.251 mV
5.58 1.46 A, 9.57 A
5.60 0.771 V, 0.683 V, 27.5 mV
5.63 24.2 µA
5.64 4.0 fF; 0.4 pF; 40 pF
9
5.66 0.388 pF at 1 mA
5.68 750 MHz, 4.17 MHz
5.69 0.149 µm
5.71 61.7, 23.1 V
5.73 73.5, 37.5 V
5.74 Fig. 5.14(a) 100 µA, 4.52 µA, 95.5 µA, 0.647 V, 0.651 V
5.76 26.3 µA
5.77 (c) 33.1 mS
5.80 (b) 38% reduction
5.82 (86.2 µA, 2.92 V) ; (431 µA, 2.92 V); (17.3 µA, 2.92 V) ; (83.2 µA, 3.13 V);
5.87 (23.4 µA, 4.13 V)
5.90 36 kΩ, 75 kΩ, 3.9 kΩ, 3 kΩ; (0.975 mA, 5.24 V)
5.91 12 kΩ, 20 kΩ, 2.4 kΩ, 1.2 kΩ; (0.870 mA, 1.85 V)
5.94 (7.5 mA, 4.3 V)
5.97 30 kΩ, 620 kΩ; (24.2 µA, 0.770 V)
5.98 5.28 V
5.100 3.21 Ω
5.101 10 V, 100 mA, 98.5 mA, 10.7 V
5.102 10 V, 109 mA, 109 mA, 14.3 V
10
Chapter 6
6.1 10 µW/gate, 8 µA/gate
6.3 2.5 V, 0 V, 0 W, 62.5 µW; 3.3 V, 0 V, 0 V, 109 µW
6.5 VOL = 0 V, VOH = 2.5 V, VREF = 0.8 V; Z = A
6.7 3 V, 0 V, 2 V, 1 V, −3
6.9 2 V, 0 V, 2 V, 3.3 V, 1.3 V, 2 V
6.11 3.3 V, 0 V, 3.0 V, 0.25 V, 1.8 V, 1.5 V, 1.2 V, 1.25 V
6.13 −0.80 V, −1.35 V
6.15 1 ns
6.17 0.250 µW/gate, 37.5 aJ
6.19 2.5 µW/gate, 1.39 µA/gate, 2.5 fJ
6.20 2.20 RC; 2.20 RC
6.22 −0.78 V, −1.36 V; 9.5 ns, 9.5 ns; 4 ns, 4 ns; 4 ns
6.25 Z = 0 0 0 1 0 0 1 1
6.27 Z = 0 1 0 1 0 1 0 1
6.30 2 ; 1
6.32 80 A
6.33 0.583 pF
6.36 57.6 kΩ, 1.26/1
6.37 (b) 2.5 V, 5.48 mV, 15.6 µW
6.41 (a) 0.450 V, 1.57 V
6.44 (a) 0.521 V, 1.81 V
6.47 NML: 0.242 V, 0.134 V, 0.351 V; NMH: 0.941 V, 0.508 V, 1.25 V
6.49 34.1 kΩ; 1.82/1; 1.49 V, 0.266 V
6.51 81.8 kΩ, 1/1.15
6.52 250 Ω; 625 Ω; a resistive channel exists connecting the source and drain; 20/1
6.53 2.17 V
6.55 1.44 V
6.58 2.7 V, 0.20 V, 0.363 mW, 0.673 mW
6.59 (a) 2.5 V, 0.206 V, 0.434 mW
11
6.62 1.75/1, 8.33/1
6.64 (b) 14.3/1, 1.70
6.66 0.106 V
6.67 (b) 1.55 V, 0.20 V, 0.150 mW
6.69 -2.40 at vO = 0.883 V; -2.44 at vO = 1.08 V
6.71 3.79 V
6.73 3.3 V, 0.296 V, 1.25 mW
6.76 1.75/1, 1/8.79
6.78 2.5 V, 0.2 V, 0.12 mW
6.79 1.014
6.80 1.46/1, 1.72/1
6.83 -5.98 at vO = 1.24 V
6.85 (a) 0.165 V, 80 µA (b) 0.860 V, 0.445 V
6.86 (a) 0.254 V, 100 µA (b) 0.600 V, 0.481 V
6.87 1.65/1, 1/2.32, 0.300 V, 0.426 V
6.89 2.22/1, 1/3.30, 1.43/1
6.91 (b) 14.3/1, 1/1.33
6.93 0.103 V, 84.8 µA
6.94 0.196 V
6.98 4.71/1, 1/1.68, 50 mV
6.99 6.66/1, 1.11/1, 0.203 V, 6.43/1, 6.74/1, 7.09/1
6.102
€
Y = A + B( ) C + D( )E , 6.66/1, 1.11/1
6.106
€
Y = ACE + ACDF + BF + BDE , 3.33/1, 26.6/1, 17.8/1
6.110 1/1.80, 3.33/1
6.112 Y = (C +E)[A(B+D)+G]+F ; 5.43/1, 20.0/1, 6.66/1, 9.99/1
6.116 64.9 mV
6.117 1.81/1, 6.43/1, 7.09/1, 6.74/1
6.121 5.43/1, 9.99/1, 6.66./1, 20.0/1
6.122 (a) 7.24/1, 26.6/1, 13.3/1
6.126
€
ID* = 2ID | PD
* = 2PD
12
6.127 1 ns
6.128 80 mW, 139 mW
6.131 60.2 ns, 16.6 MHz, a potentially stable state exists with no oscillation
6.133 31.7 ns, 4.39 ns, 5.86 ns
6.135 6.10 kΩ, 10.5/1
6.138 (a) 68.4 ns, 3.55 ns, 9.18 ns
6.140 47.1 ns, 6.14 ns, 5.39 ns
6.142 2.11/1, 16.7/1, 12.8 ns, 0.923 ns
6.143 2.28/1, 2.80/1, 924 µW
6.144 (a) 1/1.68 (d) 1/5.89 (f) 1/1.60
6.146 0.33 ns, 1.7 ns, 0.69 ns, 13.6 ns
6.149 −1.90 V, −0.156 V
6.150 1/3.30, 1.75/1
6.151 2.30 V, 1.07 V
6.153
€
Y = A + B
13
Chapter 7 7.1 10 nm: 173 µA/V2 ; 69.1 µA/V2
7.3 250 pA; 450 pA; 450 pA
7.6 3.3 V, 0 V
7.8 cutoff, triode; triode, cutoff; saturation, cutoff
7.11 1.25 V, 42.3 µA; 1.104 V, 25.3 µA
7.12 0.90 V, 20.3 µA; 0.80 V, 12.3 µA
7.13 1.104 V
7.14 (b) 2.5 V, 92.8 mV
7.16 0.799 V
7.17 1.16 V, 0.728 V
7.22 0.984 V, 2.77 mA
7.23 6.10/1, 1/5.37
7.24 (a) 1.90 ns, 1.90 ns, 0.947 ns
7.27 7.90 ns, 3.16 ns, 2.77 ns
7.31 2.11/1, 5.26/1
7.33 (a) 63.2/1, 158/1
7.36 5.52/1
7.37 5.76/1, 14.4/1
7.41 +0.25, +0.31
7.42 2.1 ns, 2.48 ns, 1.3 ns, 1.0 ns, C = 138 fF
7.44 0.75 V: 1.09 ns, 1.96 ns, 1.96 ns; (b) 2.20/1, 5.49/1; 3.07/1, 7.68/1
7.48 2.51/1, 6.27/1; 2.51/1, 12.5/1
7.50 11.3/1, 84.6/1
7.51 0.200 µW/gate; 55.6 A
7.52 0.5 µW/gate; 0.46 fF; 0.80 fF; 1.54 fF
7.54 5.00 W; 8.71 W
7.55 211,000/1; 0.0106 cm2
7.56 2.00 µW, 25.0 ns
7.59 72.3 µA; 25.0 µA
14
7.61 545 fJ, 340 MHz, 926 µW
7.65 αΔT, α2P, α3PDP
7.68 SPICE: 47.2 ns, 30.3 ns, 30.3 ns, 26.5 ns; Propagation delay formulas: 7.5 ns, 17.3 ns
7.69 1/3.75
7.70 2/1, 20/1; 4/1, 40/1
7.74 1.25/1
7.80 3.95 ns, 3.95 ns, 11.8 ns
7.81 4.67/1; 7.5/1
7.82 5 transistors; The CMOS design requires 47% less area.
7.84
€
Y = A + B( ) C + D( )E = ACE + ADE + BDE + BCE ; 12/1, 20/1, 10/1; 6/1; 30/1
7.86
€
Y = A + B( ) C + D( ) E + F( ) = AB + CD + EF ; 4/1, 15/1; 6/1; 10/1
7.88 2/1, 4/1, 6/1, 15/1
7.91 (a) Path through NMOS A-D-E (c) Paths through PMOS A-C and B-E
7.93 24/1, 20/1, 40/1
7.94 6/1, 4/1, 10/1
7.101 5.37 ns, 1.26 ns
7.103 1.26 ns, 0.421 ns, 4.74 ns, 2.38 ns
7.105 4.74 ns, 2.37 ns
7.107 8; 2.90; 23.2 Ao
7.110
€
Ao
β N −1β −1
7.111 263 Ω; 658 Ω
7.114 240/1, 96.2/1
7.115 1.41 V, 2.50 V
7.117 1.16/1
7.121 Latchup does not occur.
15
Chapter 8 8.1 1,048,576 bits, 4,294,967,296 bits; 2048 blocks
8.2 3.73 pA/cell , 233 fA/cell
8.5 3 V, 0.667 µV
8.9 1.55 V, 0 V, 3.59 V
8.11 “1” level is discharged by junction leakage current
8.13 1.47 V, 1.43 V
8.14 −16.6 mV; 2.48 V
8.15 0 V, 1.90; Junction leakage will destroy the “1” level
8.18 3.30 V, 1.60 V; −1.58 V
8.22 135 µA, 346 mW
8.24 0.266 V
8.25 0.945 V (The sense amplifier provides a gain of 10.5.)
8.31 0 V, 1.43 V, 3.00 V
8.32 0.8 V, 1.2 V; 0.95 V, 0.95 V
8.34 53,296
8.38 W1 = 010001102 , W3 = 001010112
16
Chapter 9
9.1 0 V, -1.50 V; 6 kΩ
9.2 0 V, -0.700 V
9.3 (a) -1.38 V, -1.12
9.6 0 V, −0.40 V; 3.39 kΩ; Saturation, cutoff; Cutoff, saturation
9.8 −0.70 V, −1.30 V, −1.00 V, 0.60 V
9.11 −0.70 V, −1.50 V, −1.10 V, 2.67 kΩ, 41 kΩ; 0.289 V; −0.10 V, +0.30 V
9.13 -1.70 V, -2.30 V, 0.60 V, Yes
9.15 Fig. P9.6: 1; In contrast, Fig. 9.6: 11
9.16 (a) 370 Ω, 400 kΩ, 2.34 kΩ, 8.40 kΩ
9.18 -1.10 V, -1.50 V, -1.30 V, 0.400 V, 0.107 V, 1.10 mW
9.19 0.383 V
9.21 -0.70 V, -1.50 V, -1.10 V, 11.3 kΩ, 2.67 kΩ, 2.38 kΩ; 0.289 V
9.22 0.413 V
9.25 50.0 µA, -2.30 V
9.26 Standard values: 11 kΩ, 150 kΩ, 136 kΩ
9.29 +0.300 V, −0.535 V, 334 Ω
9.31 3.7 mA
9.33 (b) 0.135 mA
9.35 10.7 mA
9.37 400 Ω, 75.0 mA
9.39 (c) 0 V, -0.7 V, 3.93 mA (d) -3.7 V, 0.982 mA (e) 2920 Ω
9.42 (b) Z = A+B = AB
9.44 −0.850 V; 3.59 pJ
9.46 359 ns
9.47 0 V, −0.600 V, 5.67 mW, 505 Ω, 600 Ω; Y = A + B + C, 5 vs. 6
9.50 5.00 kΩ, 5.40 kΩ, 31.6 kΩ, 113 kΩ
9.51 1 kΩ, 1 kΩ, 1.30 mW
9.53 2.23 kΩ, 4.84 kΩ, 60.1 kΩ
9.56 1.45 V for VCB2 ≥ 0 V; 1.25 V for VCB2 ≥ -0.2 V
17
9.57 +0.60, - 0.56, 314 Ω
9.60 1.446 mA, 1.476 mA, 29.66 µA; 1.446 mA, 1.476 mA, 29.52 µA
9.62 -0.9 V, -1.1 V, -1.8 V, -2.0 V, -2.7 V, -2.9 V, -4.2 V
9.63 Y = AB+ AC
9.68 0, -0.8. 0, -0.8, 3.8 V
9.70 2.98 pA, 70.5 fA
9.72 160; 0.976; 0.976; 0.773 V
9.73 0.691 V, 0.710 V
9.77 63.3 µA, 265 µA
9.79 40.2 mV, 0.617 mV
9.81 234 mA; 34.9 mA
9.85 (IB, IC): (a) (135 µA, −169µA); (515µA, 0); (169 µA, 506 µA); (0, 0)
(b) all 0 except IB1 = IE1 = 203 µA
9.86 13.5 mW, 7.60 mW
9.88 1.85 V, 0.15 V; 62.5 µA, −650 µA; 13
9.89 2.5 V, 0.15 V, 0.66 V, 0.80 V, 0.51 V, 1.7 V
9.92 180
9.93 22
9.96 Y = ABC ; 1.9 V; 0.15 V; 0, −408 µA
9.98 1.5 V, 0.25 V; 0, −1.00 mA; 16
9.99 0.7 V, 191 µA, 59 µA, 1.18 mA
9.100 -1.13 mA, 0, 4.50 mA, 0, 0; 0, 0, 0, 0, 1.23 mA, 0
9.102 Y = A + B + C; 0 V, −0.8 V; −0.40 V
9.103 1.05 mA, 26.9 µA
9.104 2 fJ; 10 fJ
9.106 1.67 ns; 0.5 mW
9.107 2.8 ns; 140 mW
18
Chapter 10 10.2 (a) 41.6 dB, 35.6 dB, 94.0 dB, 100 dB, -0.915 dB
10.4 29.35
10.5 Using MATLAB:
t = linspace(0,.004); vs = sin(1000*pi*t)+0.333*sin(3000*pi*t)+0.200*sin(5000*pi*t); vo= 2*sin(1000*pi*t+pi/6)+sin(3000*pi*t+pi/6)+sin(5000*pi*t+pi/6); plot(t,vs,t,vo)par 500 Hz: 1 0°, 1500 Hz: 0.333 0°, 2500 Hz: 0.200 0°; 2 30°, 1 30°, 1 30° 2 30°, 3 30°, 5
30°; yes 10.7 36.8 dB, 113 dB, 75.0 dB
10.9 22.0 dB, 90.0 dB, 56.0 dB; Vo = 12.7 V, recommend ±15-V supplies
10.11 3.01 x10-8 S, -6.62 x10-3, 1.00, 66.2 Ω
10.13 0.167 mS, -0.333, -2000, 4.08 MΩ
10.15 1.000 mS, −1.000, 6001, 30.00 kΩ
10.16 53.7 dB, 150 dB, 102 dB; 11.7 mV; 31.3 mW
10.17 45.3 mV, 1.00 W
10.21 −5420
10.23 0, ∞, 80 mW, ∞
10.24 196
10.30 −10 (20 dB), 0.1 V; 0, 0 V
10.32 vO = [8 – 4 sin (1000t)] volts; there are only two components; dc: 8 V, 159 Hz: −4 V
10.33 24.1 dB, 2nd and 3rd, 22.4%
10.35 2.4588 0.0038 5.3105 0.0066 1.3341 0.0026 0.4427 0.0028 0.0883 0.0012 0.1863 0.0023
10.38 59.6 dB, 124 dB, 91.8 dB; 10.1 mV
10.41 Rid ≥ 4.95 MΩ
10.43 50.1 µV, 140 dB
10.45 (a) −46.8, 4.7 kΩ, 0, 33.4 dB
10.47 (d) (-2.20 + 1.50 sin 2500πt) V
10.48 (a) vO = 4.00− 20Vi sin2000π t( ) V b( ) 0.4 V
10.53 15.0 kΩ, 374 kΩ, Av = -24.9, Rin = 15.0 kΩ
19
10.56 -80.0, 15 kΩ, 0
10.59 2 MΩ
10.60 92.5, ∞, 0, 39.3 dB
10.63 (d) (5.74 – 3.13 sin 3250πt) V
10.67 1 kΩ, 200 kΩ, Av = 201
10.69 -(1.88 sin 10000t +0.235 sin 3770t) V, 0 V
10.70 −0.750 sin 4000πt V; −1.375 sin 4000πt V; 0 to −1.875 V in -125-mV steps
10.71 455/1, 50/1
10.72 −10, 110 kΩ, 10 kΩ, , (-30 + 15cos 8300πt) V, (-30 + 30cos 8300πt) V
10.73 3.1 V, 3.2 V, 2.91 V, 2.91 V, 1.00 V, 0 V; 1.91 µA; 1.91 µA, 2.90 µA
10.76 60 dB, 10 kHz, 10 Hz, 9.99 kHz, band-pass amplifier
10.78 80 dB, ∞, 100 Hz, ∞, high-pass amplifier
10.81 60 dB, 100 kHz, 28.3 Hz, 100 kHz, band-pass amplifier
10.83 Using MATLAB: n = [1e4 0]; d = [1 200*pi]; bode(n,d)
10.84 (a) Using MATLAB: n = [-20 0 -2e13]; d = [1 1e4 1e12]; bode(n,d)
10.86 0.030 sin (2πt + 89.4°) V, 1.34 sin (100πt + 63.4°) V, 3.00 sin (104πt + 1.15°) V
10.89 0.956 sin (3.18x105πt + 101°) V, 5.00 sin (105πt + 180°) V, 5.00 sin (4x105πt − 179°) V
10.91
€
Av s( ) =2x108πs +107π
| Av s( ) = -2x108πs +107π
10.93 12.8 kHz, -60 dB/decade
10.94 3.16 sin (1000πt + 10°) + 1.05 sin (3000πt + 30°)+ 0.632 sin (5000πt + 50°) V Using MATLAB:
t = linspace(0,.004); A=10^(10/20); vs = sin(1000*pi*t)+0.333*sin(3000*pi*t)+0.200*sin(5000*pi*t); vo = A*sin(1000*pi*t+pi/18)+3.33*sin(3000*pi*t+3*pi/18)+2.00*sin(5000*pi*t+5*pi/18); plot(t, A*vs, t, vo)
10.96 -4.44 dB, 26.5 kHz
10.97 11 kΩ, 0.015 µF
10.100 60 dB, 100 Hz
10.101 -1.00 dB, 173 Hz
10.104 (b) -20.7, 29.5 kHz
10.105 20 kΩ, 200 kΩ, 8200 πF
20
10.107 0.265 cos(2000πt) V
10.109 Av s( ) =VoVi= +1+KsRC
10.110 T(s) = -sRC
10.113 −6.00, 20.0 kΩ, 0; +9.00, 91.0 kΩ, 0; 0, 160 kΩ, 0
10.114 0.5 A, 2.00 V, > 5 W (choose 7.5 W)
10.115 0.968 A; 0.748 V; 0.748 V; ≥ 14.5 W (choose 20 W), 14.5 W
21
Chapter 11 11.1 (c) 2.50, 8.00, 5.71, 28.6 %
11.3 124 dB
11.4 1/(1+Aβ); 9.99×10−3percent
11.5 (a) 13.49, 9.11x10-3, 0.0675%
11.7 120 dB
11.9 (a) -19.98, 2.10x10-2, 0.105%
11.13 106 dB
11.15 100 µA, 100 µA, -48.0 pA, +48.0 pA
11.17 (a) 13.5, 296 MΩ, 135 mΩ
11.20 (a) -19.6, 2.40 kΩ, 82.1 mΩ
11.22 If the gain specification is met with a non-inverting amplifier, the input and output specifications cannot be met.
11.24 157Vs, 1.95 Ω
11.26 ≤ 0.75 %
11.27 (b) shunt-series feedback (d) series-shunt feedback
11.29 (a) Series-shunt (a) and and series-series (c) feedback
11.32 110 dB, 6.32 S
11.34 9.97, 10.3 MΩ, 2.43 Ω
11.35 9110, 3.00, 3.00, 368 MΩ, 0.400 Ω
11.37 (a) +T/(1+T) ≅ +1 (c) -T/(1+T) ≅-1
11.39 -9.997 kΩ, 2.333 Ω, 0.2999 Ω
11.41 -23.99 kΩ, 5.957 Ω, 0.4398 Ω
11.44 20000s s+ 4170( ), 20000 4.80s+1( )
11.48 -3.33 mS, 26.8 MΩ, 8.74 MΩ
11.54 1.097, 28.12 Ω, 4.775 MΩ
11.56 10.98, 15.17 Ω, 33.11 MΩ
11.57 680.4, 0.334
11.59 6330, 0.0260
11.61 6.25 %, 16.7 %
22
11.62 0.00372 %, 0.0183 %
11.63 0 V, -26 mV, 90.9 kΩ
11.65 +7500, -0.667 mV
11.67 The nearest 5% values are 1 MΩ and 5.1 kΩ
11.69 +6.8 V, 0 V; -10 V, +0.462 V
11.71 -5.00 V, 0 V; -10.0 V, +0.182 V
11.73 12 V, 0 V; 15 V, 0.225 V
11.76 110 Ω and 22 kΩ represent the smallest acceptable resistor pair.
11.78 32.8 Ω
11.80 0 V, 3 V; 0.105 V; 0 V; 49.0 dB
11.82 (d) [0.357 sin(120πt) - 4.91 sin(5000πt)] V
11.84 The middle resistor in Fig. P11.84 should be 20 kΩ , and part (b) should
refer to the 20 kΩ resistor. (b) 124 dB
11.85 66 dB
11.86 20.0 kΩ, 56.0 kΩ
11.87 (a) 20 Hz (c) 104 dB
11.89 50 Hz; 5 MHz; 2.5 MHz
11.91 200; 199
11.93 80 dB, 1 kHz, 1 MHz; 101 MHz, 9.90 Hz; 251 MHz, 3.98 Hz
11.95 100 dB, 1 kHz, 1 MHz; 8.4 Hz, 119 MHz; 5.3 Hz, 188 MHz
11.96 (a)
€
Ro s +ωB( ) s +ωB 1+ Aoβ( )[ ]
11.99 (a)
€
Rid s +ωB 1+ Aoβ( )[ ] s +ωB( )
11.103
€
Av s( ) = −3.285x1012
s2 +1.284x107 s +1.675x1011; (2 poles: 2.08 kHz and 2.04 MHz)
11.105
€
Av s( ) = −6.283x1010
s2 + 3.142x107 s + 6.283x105; (2 poles: 3.18 mHz and 5.00 MHz)
11.107 6.91, 7.53, 6.35; 145 kHz, 157 kHz, 133 kHz
11.109 3.14 V/µs; 3.14 V/ms
11.111 10 V/µs
23
11.115 1010 Ω, 7.96 pF, 4x106, Ro not specified
11.117 90.6 o; 90.2o
11.118 8.1 o; 5.1o
11.120 110 kHz; A ≤ 2048; larger
11.121 Yes, but almost no phase margin; 0.4°
11.123 88o versus 90o; 90o versus 90o
11.126 10 MHz, 90.0o; 5 MHz, 90.0o
11.128 Av s( ) = −3.770x1010
s2 +1.885x107s+3.770x105; 90o
11.130 Yes, but almost no phase margin; 1.83°
11.132 90.0o
11.134 12o; Yes, 796 pF ! 50o
11.139 Yes, 24.4o, 50 %
11.141 1.8o
11.142 38.4o, 31 %
11.145 133 pF
11.147 90.1o
11.150 (a) 72.2o
11.151 (a) 44.4 MHz, 8.09o, 80.0%
11.153 (a) 34.4, 23.4%
11.155 (a) 12.5 MHz
24
Chapter 12 12.1 A and B taken together, B and C taken together
12.3 -6500, 3 kΩ, 0
12.5 72, 556 MΩ, 4.50 mΩ
12.7 76.3 dB, 3.00 kΩ, 98.3 mΩ
12.8 (c) 2.00 mV, -37.3 mV, 3.73 µV, 0.696 V, 69.6 µV, 0 V, -12.0 V, 50.4 mV, 0V (ground
node)
12.11 -2960, 3.9 kΩ, 0
12.12 “2-kΩ” should be 3-kΩ ; 12.1 kΩ, 12.1 kΩ
12.16 3050, 3440, 2704, 1 MΩ, 1.02 MΩ, 980 kΩ, 0
12.17 -2970, 120 kΩ, 0; 4.00 mV, 4.00 mV, 54.0 mV, 0 V, -1.08 V, -1.08 V, -11.9 V, 0V (ground
node)
12.19 (a) -15.0, 188 kHz; -4.70, 526 kHz; +70.4, 169 kHz
12.21 14.5, 345 kHz, 69.7 dB, 176 kHz
12.23 -2648, 662 MΩ, 75.5 mΩ, 26.0 kHz; 0 V, 10.0 mV, 49.2 mV, 215 µV, -4.30 V, -3.06 V, -15.0 V, +15.0 V, -15.0 V, 0 V
12.25 3
12.27 20 kΩ, 62 kΩ, 394 kHz
12.30 103 dB, 98.5 dB, 65 kHz, 38 kHz
12.33 (a) In a simulation of 5000 cases, 33.5% of the amplifiers failed to meet one of the specifications. (b) 1.5% tolerance.
12.36 -12, (-6.00 + 2.40 sin 4000πt) V
12.38 6.00 V, 5.02 V, 4.98 V, 4.00 V, 1.998 V, 1.998 V, 2.012 V, -600 µA, 0 µA, +400 µA, 0.002, -50.0, 88 dB 12.40 (b) 0.005 µF, 0.0025 µF, 900 Ω
12.44
€
VO
VS
=K
s2R1R2C1C2 + s R1C1 1− K( ) + C2 R1 + R2( )[ ] +1 | SK
Q =K
3− K
12.46 -1
12.48 270 pF, 270 pF, 19.1 kΩ
12.49 (a) 51.2 kHz, 7.07, 7.24 kHz
25
12.52 (a) 1 rad/s, 4.65, 0.215 rad/s;
€
ABP s( ) =−6s
s2 +s3
+1
#
$
% % %
&
'
( ( (
2
12.54 5.48 kHz, 4.09, 1.34 kHz
12.56
€
T = +K
sR2C2
s2 + s1
R2C2
+1
R1 R2( )C1
"
#
$ $
%
&
' ' +
1R1R2C1C2
12.62 -5.5 V, -5.5, 10 %; -5.0 V, -5.0, 0
12.64 12.6 kHz, 1.58, 7.97 kHz
12.67 (a) -0.960 V (b) -1.440 V
12.68 10.6 mV, 5 %
12.71 379/1, 41.7/1
12.73 0.66 LSB, 0.33 LSB
12.74 1.43%, 2.5%, 5%, 10%
12.75 12 resistors, 4096:1
12.77 (a) 1.0742 kΩ, 0.188 LSB, 0.094 LSB
12.79 (a) (2n+1-1)C
12.82 (b) 1.01 inches
12.83 3.49546875 V ≤ VX ≤ 3.49578125 V
12.84 1.90735 µV, 110100001011010001002, 011111111001111010112
12.87 00010111012, 93 µs
12.89 800 kHz, 125 ns
12.91 vO t( ) = 2x105 1− exp −t4x104RC
"
#$
%
&' for t ≥ 0 | RC ≥ 0.050 s
12.92 19.1 ns
12.95 0.5774/RC, 1.83
12.96 1/RC, 2R
12.98 60 kHz, 6.8 V
12.100 17.5 kHz, 11.5 V
26
12.104 0.759 V
12.105 2.40 Hz
12.110 VO = −V1V2104 IS
12.111 3.11 V, 2.83 V, 0.28 V
12.113 0.445 V, -0.445 V, 0.89 V
12.115 9.86 kHz
12.116 VO = 0 is a stable state, so the circuit does not oscillate. f = 0.
12.118 0, 0.298 V, 69.0 mV
12.120 42 kΩ, 2 kΩ, 51 kΩ, 120 pF
27
Chapter 13
13.1 (0.700 + 0.005 sin 2000πt) V, -1.03 sin 2000πt V, (5.00 −1.03 sin 2000πt) V. 2.82 mA
13.3 (a) C1 is a coupling capacitor that couples the ac component of vI into the amplifier. C2 is a coupling capacitor that couples the ac component of the signal at the collector to the output vO. C3 is a bypass capacitor. (b) The signal voltage at the top of resistor R4 will be zero.
13.5 (a) C1 is a coupling capacitor that couples the ac component of vI into the amplifier.
C2 is a bypass capacitor. C3 is a coupling capacitor that couples the ac component of the signal at the drain to output vO. (b) The signal voltage at the source of M1 will be vs = 0.
13.7 (a) C1 is a coupling capacitor that couples the ac component of vI into the amplifier.
C2 is a bypass capacitor. C3 is a coupling capacitor that couples the ac component of the signal at the collector to output vO. (b) The signal voltage at the emitter terminal will be ve = 0.
13.9 (a) C1 is a coupling capacitor that couples the ac component of vI into the amplifier.
C2 is a coupling capacitor that couples the ac component of the signal at the drain to output vO.
13.12 (a) C1 is a coupling capacitor that couples the ac component of vI into the amplifier.
C2 is a bypass capacitor. C3 is a coupling capacitor that couples the ac component of the signal at the drain to the output vO. (b) The signal voltage at the top of R4 will be zero.
13.16 (1.91 mA, 2.78 V)
13.18 (a) (18.3 µA, 6.50 V)
13.20 (56.4 µA, 3.67 V)
13.24 (99.7 µA, 9.74 V)
13.28 (184 µA, 15.5 V)
13.32 (943 µA, -7.89 V)
13.34 (1.01 mA, 9.20 V)
13.43 Thévenin equivalent source resistance, gate-bias voltage divider, gate-bias voltage divider, source-bias resistor—sets source current, drain-bias resistor—sets drain-source voltage, load resistor
13.45 118 Ω, 3.13 TΩ, ≤ -28.5 mV
13.46 (c) 8.65 Ω
13.47 Errors: +10.7%, -9.37%; +23.0%, - 17.5%
28
13.48 (c) 1.00 µA
13.49 (188 µA, ≥ 0.7 V), 7.50 mS, 533 kΩ
13.54 (b) +16.7%, -13.6%
13.55 90, 120; 95, 75
13.60 [−59.0, −58.3]
13.62 -48.1
13.66 −90
13.68 Yes, using ICRC =VCC +VEE
2
13.70 3
13.71 25 mA; 30.7 V
13.72 1.00 V
13.73 No, there will be significant distortion
13.74 −345
13.79 40/1, 0.500 V
13.80 0.960 A
13.81 10%, 20%
13.84 (66 µA, 7.5 V)
13.85 Virtually any desired Q-point (set by the choice of RG)
13.86 400 = 133,000iP + vPK; (1.4 mA, 215 V); 1.6 mS, 55.6 kΩ, 89.0; -62.7
13.87 FET
13.88 BJT
13.89 35.3 µA, 2800
13.90 2000, 200, 8.00 mS, 0.800 mS
13.93 23.5 dB
13.95 (180 µA, 9.0 V)
13.96 0.360 V
13.97 1.0 V, 45 V
13.99 3
13.101 −10.3
13.104 −6.66
29
13.109 25.0 kΩ, 91.9 kΩ
13.112 455 kΩ, 1.42 MΩ
13.114 243 kΩ, 40.1 kΩ
13.116 6.8 MΩ, 45.8 kΩ, independent of Kn
13.118 1 MΩ, 3.53 kΩ
13.119 -150vi, 95.5 kΩ
13.121 -23.6vi, 508 kΩ
13.123 (a) 38.9 dB, 6.29 kΩ, 9.57 kΩ
13.125 36.4 dB, 62.9 kΩ, 95.7 kΩ
13.129 92.6 µW, 221 µW, 1.26 mW, 0.761 mW, 0.865 mW, 3.19 mW
13.133 528 µW, 765 µW, 252 µW, 51.6 µW, 132 µW, 1.73 mW
13.136 VCC/15
13.137 2.35 V, 9.72 V
13.138 VCC/2, (VCC)2/8RL, (VCC)2/2RL, 25%
13.139 0.955 V
13.141 2.35 V
13.142 1.86 V
13.143 3.19 V
13.147 694 µA
13.148 -4.60, 1 MΩ, 6.82 kΩ
30
Chapter 14 14.1 (a) C-C or emitter-follower (c) C-E (e) not useful, signal is being injected into the
drain (h) C-B (k) C-G (o) C-D or source-follower
14.16 (a) −38.5, 8.99 kΩ, 552 kΩ, -30.1, 34.7 mV
14.17 Assume (VGS-VTN) = 0.5 V (a) −5.82, 2 MΩ, 29.8 kΩ, -4030
14.18 (a) −6.52 (e) −240
14.19 3.29 kΩ, 50.0 kΩ
14.22 −215, -9.85, 22.4 kΩ, 56 kΩ, 5.11 mV
14.23 -145, -5.54, 3.49 kΩ, 10.0 kΩ, 6.76 mV, -120
14.24 −12.9, −10.1, 368 kΩ, 82 kΩ, 149 mV
14.26 -2.40, -667, 10 MΩ, 1.80 kΩ, 0.700 V
14.27 -3330, -3.65, 848 Ω, 50.1 kΩ, 6.41 mV
14.29 0.779, 35.6 kΩ, 105 Ω, 29.6, 6.40 mV
14.30 Assume (VGS-VTN) = 0.5 V: 0.914, 2 MΩ, 125 Ω, 16,000, 2.50 V
14.31 0.986, 44.6 kΩ, 13.7 Ω, 1.62 V
14.32 0.961, 1 MΩ, 542 Ω, 7.02 V
14.33 0.992, 12.6 MΩ, 1.18 kΩ, 0.664 V
14.34 0.874, 7.94 MΩ, 247 Ω, ∞
14.35
€
vi ≤ 0.005 + 0.2VRE( ) V
14.35 0.9992, 30.1 V
14.39 (b) 77.7, 702 Ω, 6.88 MΩ, 0.969, 20.7 mV
14.40 49.8, 1.25 kΩ, ∞, 0.750, 1.13 V (Assume (VGS-VTN) = 1 V)
14.42 43.6, 146 Ω, 39.0 kΩ, 22.1 mV
14.44 4.11, 1.32 kΩ, 20.0 kΩ, 354 mV
14.46 4.75, 3.19 kΩ, 24.0 kΩ, 326 mV
14.48 44.4 Ω; 260 Ω
14.49 633 Ω; 408 Ω
14.51 βo +1( )ro =198 MΩ
31
14.52 Low Rin, high gain: Either a common-base amplifier operating at a current of 50.0 µA or a common-emitter amplifier operating at a current of approximately 5.00 mA can meet the specifications with VCC ≈ 14 V.
14.56 Large Rin, moderate gain: Common-source amplifier.
14.57 Common-drain amplifier.
14.58 Cannot be achieved with what we know at this stage in the text.
14.59 Low Rin, high gain: Common-emitter amplifier with 5-Ω input "swamping" resistor.
14.61 Part (b) should be IC = 1 mA: (a) 4.13 Ω
14.64
vi 1 kHz 2 kHz 3 kHz THD 5 mV 621 mV 26.4 mV (4.2%) 0.71 mV (0.11%) 4.2% 10 mV 1.23 V 0.104 V (8.5%) 5.5 mV (0.45%) 8.5% 15 mV 1.81 V 0.228 V (12.6%) 18.2 mV (1.0%) 12.7%
14.66 (b) 1230vi, 583 kΩ
14.67 vi, 297 Ω
14.70 gm, 0; -500 µS, 0
14.71 (a) −gm 1+ 1µ f
"
#$$
%
&'' | − go | µ f +1
14.74 (a)
€
−gm
1+ gmRE
| −go
1+ gmRE( )RE
RE + rπ
$
% &
'
( ) |
Gm
Gr
= µ f 1+rπRE
$
% &
'
( ) >>1
14.76 -0.984, 0.993, 0.703 V
14.80 SPICE: (115 µA, 6.30 V), -20.5, 368 kΩ, 65.1 kΩ
14.81 SPICE: (116 µA, 7.53 V), −150, 19.6 kΩ, 37.0 kΩ
14.83 SPICE: (66.7 µA, 4.47 V), −16.8, 1.10 MΩ, 81.0 kΩ
14.85 SPICE: (5.59 mA, -5.93 V), -3.27, 10.0 MΩ, 1.52 kΩ
14.87 SPICE: (6.20 mA, 12.0 V), 0.953, 2.00 MΩ, 388 Ω
14.88 SPICE: (175 µA, 4.29 V), -4.49, 500 kΩ, 17.0 kΩ
14.89 (430 µA, 1.93 V), (430 µA, 3.07 V), -2.89, 193 kΩ, 3.22 kΩ, (Note Atr = 743 kΩ)
14.90 (4.50 mΑ, 2.50 V), (4.50 mA, 2.50 V), -83.9, 8.94 kΩ, 10.5 kΩ
14.91 0.486, 182 kΩ, 348 Ω
14.95 1.00 µF, 0.039 µF, 68 µF; 2.7 µF
32
14.96 2000 pF, 33 pF; 10 µF, 150 pF
14.99 0.68 µF, 0.015 µF
14.101 8200 pF, 1500 pF
14.105 33.3 mA
14.106 R1 = 120 kΩ, R2 = 110 kΩ
14.109 45.1 ≤ Av ≤ 55.3 - Only slightly beyond the limits in the Monte Carlo results.
14.111 The second MOSFET
14.114 The supply voltage is not sufficient - transistor will be saturated.
14.116 4.08, 1.00 MΩ, 64.3 Ω
14.119 2.17, 1.00 MΩ, 64.3 Ω
14.124 468, 73.6 kΩ, 18.8 kΩ
14.125 0.670, 107 kΩ, 20.0 kΩ
14.127 7920, 10.0 kΩ, 18.8 kΩ
14.128 140, 94.7 Ω, 113 Ω
14.132 1.56 Hz; 1.22 Hz
14.133 19.2 Hz; 18.0 Hz
14.134 6.40 Hz; 5.72 Hz
14.136 0.497 Hz, 0.427 Hz
14.137 1.70 kHz; 1.68 kHz
33
Chapter 15
15.1 (20.7 µA, 5.86 V); −273, 242 kΩ, 484 kΩ; −0.604, 47.0 dB, 27.3 MΩ
15.2 (5.25 µA, 1.68 V); −21.0, -0.636, 24.4 dB, 572 kΩ, 4.72 MΩ, 200 kΩ, 50.0 kΩ
15.4 (70.8 µA, 8.62 V); −283, -0.494, 47.1 dB, 58.4 kΩ, 10.1 MΩ, 200 kΩ, 50.0 kΩ
15.7 REE = 1.1 MΩ, RC = 1.0 MΩ
15.8 (a) (198 µA, 3.39 V); differential output: −372, 0, ∞ (b) single-ended output: −186, −0.0862, 66.7 dB; 25.2 kΩ, 27.3 MΩ, 94.0 kΩ, 23.5 kΩ
15.10 3.478 V, 6.258 V, -2.78 V, 4.64 V
15.12 VO = 5.72 V, vo = 0; VO = 5.79 V; vi ≤ 27 mV, the small-signal limit.
15.15 (27.5 µA, 4.20 V); Differential output: −220, 0, ∞; single-ended output: −110, −0.661, 44.4 dB; 272 kΩ, 22.7 MΩ
15.16 -6.815 V, -3.905 V, -2.91 V
15.20 (4.94 µA, 1.77 V); differential output: −77.2, 0, ∞; single-ended output: −38.6, −0.0385, 60.0 dB; 810 kΩ, 405 MΩ, [-1.07 V, 1.60 V]
15.21 -283, -.00494, 95.2 dB
15.22 -273.6, -.004942, 94.9 dB
15.24 (330 µA, 6.83 V); differential output: −11.3, 0, ∞; single-ended output: −5.65, −0.689, 18.3 dB; ∞, ∞
15.26 (329 µA, 6.87 V); differential output: −8.8, 0, ∞; single-ended output: −4.40, −0.677, 16.3 dB; ∞, ∞
15.29 5.1 kΩ, 27 kΩ
15.30 (70.2 µA, 10.9 V); differential output: −14.7, 0, ∞; single-ended output: −7.35, −0.484, 23.6 dB; ∞, ∞; (83.5 µA, 8.47 V)
15.33 (750 µA, 3.50 V); differential output: −11.3, 0, ∞; single-ended output: −5.65, −0.223, 28.1 dB; ∞, ∞
15.34 (750 µA, 4.25 V); differential output: −5.63, 0, ∞; single-ended output: −2.81, −0.218, 22.2 dB; ∞, ∞
15.35 (20.0 µA, 10.3 V); differential output: −38.1, 0, ∞; single-ended output: −19.0, −0.120, 44.0 dB; ∞, ∞
15.38 312 µA, 27 kΩ
15.41 -20.26, -0.7812, 22.3 dB , ∞, ∞
15.44 −3.80 V, −2.64 V, 40 mV
15.47 -79.85, -0.4936, 751.4 kΩ
34
15.48 (99.0 µA, 6.80 V), −30.4, −0.167, 550 kΩ
15.50 (49.5 µA, 3.29 V), (49.5 µA, 11.7 V); −149, -0.0625, 101 kΩ
15.51 (100 µA, 1.38 V), (100 µA, 4.68 V); −13.4, 0, ∞
15.54 (24.8 µA, 18.0 V), (750 µA, 18.0 V); 8980, 202 kΩ; 19.5 kΩ; 160 MΩ; v2
15.56 6.33 mV, 106 dB, PSRR+ = 105 dB, PSRR- = 60.3 dB
15.58 [-16.6 V, 17.3 V]
15.63 4550, 21.98 nA, 0.879 µA, 99.1 µA, 72.8 MΩ, 653 kΩ
15.66 (24.8 µA, 17.3 V), (7.35 µA, 17.3 V), (743 µA, 18.0 V); 6760, 202 kΩ; 17.9 kΩ; 158 MΩ; v2
15.67 (98.8 µA, 20.9 V), (440 µA, 20.9 V); 699, 40.5 kΩ; 48.6 kΩ
15.68 (98.8 µA, 18.0 V), (8.8 µA, 18.0 V), (360 µA, 18.0 V); 3740, 40.4 kΩ; 36.1 MΩ
15.70 390 Ω, 1.1 k Ω, 3.74 mA
15.75 (250 µA, 15.6 V), (500 µA, 15.0 V); 3300, ∞; 165 kΩ
15.78 5770
15.79 [-5.32 V, 2.93 V]
15.80 (250 µA, 7.42 V), (6.10 µA, 4.30 V), (494 µA, 5.00 V); 4230, ∞; 97.5 kΩ
15.84 (49.5 µA, 22.0 V), (360 µA, 21.3 V), (990 µA, 22.0 V); 13500, 101 kΩ; 1.98 kΩ; 73.5 MΩ; v2
15.86 (300 µA, 6.10 V), (500 µA, 3.89 V), (2.00 mA, 6.00 V); 541, ∞, 339 Ω
15.88 (300 µA, 6.55 V), (500 µA, 3.89 V), (2.00 mA, 6.00 V), 3000, ∞, 336 Ω
15.90 Error in Problem Statement: Kn = 5 mS (375 µA, 11.0 V), (2.00 mA, 9.84 V), (5.00 mA, 12.0 V); 708, ∞; 127 Ω
15.91 Error in Problem Statement: Kn = 5 mS (375 µA, 11.7 V), (2.00 mA, 9.75 V), (5.00 mA, 12.0 V); 1270, ∞; 159 Ω
15.92 15.32 mV, 77.5 dB, PSRR+ = 77.5 dB, PSRR- is limted by numerical noise
15.93 (99.0 µA, 4.96 V), (99.0 µA, 5.00 V), (500 µA, 3.41V), (2.00 mA, 5.00 V); 11400, 50.5 kΩ, 224 Ω
15.95 (49.5 µA, 10.0 V), (98.0 µA, 9.30 V), (735 µA, 15.0 V); 2680, 101 kΩ, 3.05
kΩ; [undefined for an ideal current source, +9.3 V]; 1.81 mV
15.97 No, Rid must be reduced or Rout must be increased.
35
15.108 30.6 µA
15.111 438 µA
15.114 32.2 µA
15.116 4 mA, 0 mA, 8 mA, 10.0 percent
15.117 66.7 percent
15.120 46.7 mA, 13.5 V
15.122 23.5 µA
15.123 6.98 mA, 0 mA
15.124 25.0 mΩ
15.126 (a) 18.7 µA, 61.5 MΩ
15.129 (a) 134 µA, 8.19 MΩ
15.130 Two of many: 75 kΩ, 6.2 kΩ, 150 Ω; 68 kΩ, 12 kΩ, 1 kΩ
15.131 570 µA, 655 kΩ
15.132 543 µA, 674 kΩ
15.135 0, ∞
15.136 68.0 µA, 22.4 MΩ
15.139 19.6 µA, 123 MΩ
15.142 390 kΩ, 210 kΩ, 33 kΩ
15.144 157.4 µA, 16.61 MΩ, 31.89 µA, 112.2 MΩ
15.145 139 µA, 3.15 MΩ, 486 µA, 432 kΩ
15.149 100 µA, 6.57 x 1011 Ω
15.150 (4.64 µA, 7.13 V), (9.38 µA, 9.02 V); 40.9 dB, 96.5 dB
15.153 βo1µ f 1 /2 , For typical numbers: (100)(40)(70)/2 = 140,000 or 103 dB
15.141 3σ limits: IO = 200 µA ± 31.9 µA, ROUT = 11.7 MΩ ± 2.1 MΩ 3σ limits: IO = 197 µA ± 33.8 µA, ROUT = 11.5 MΩ ± 1.7 MΩ
36
Chapter 16
16.1 [4.39 kΩ, 4.62 kΩ]
16.2 2.00 mV; 3.76 mV; 2%
16.4 7.7%, 0.678 µA, 0.712 µA, (IOS = -34.7 nA)
16.7 25.0 mV; 1.2%; 0.4%
16.8 (a) 122 µA, 239 µA, 496 µA, 904 kΩ, 452 kΩ, 226 kΩ
16.11 87.5 µA, 175 µA, 350 µA; 0.0834 LSB, 0.126 LSB, 0.411 LSB
16.12 273 µA, 385 kΩ, 574 µA, 192 kΩ
16.16 (a) 687 µA, 94.6 kΩ, 1.11 mA, 56.8 kΩ
16.18 469 kΩ, 109 µA; 515 kΩ, 109 µA
16.21 202 µA, 327 µA
16.22 Use βFO = 80 and VA = 60 V. 514 µA, 827 µA; 522 µA, 827 µA; 423 µA, 681 µA
16.24 Use transistor parameters from Prob. 16.23 581 kΩ, 13.6 µA, 142 µA
16.26 10
16.28 15 kΩ, 2/3
16.30 142 µA, 592 MΩ
16.32 4.90 kΩ; 4.90 kΩ
16.34 215 kΩ, 13.9 kΩ, 0.556
16.36 (a) 21.8 µA, 18.4 MΩ
16.38 (a) 24.8 µA, 143 MΩ (c) 1410 V
16.42 (a) 14.0 µA, 80/1; 122 MΩ
16.44 (a) 2/gm2
16.46 9.49/1
16.49 23.1 MΩ, 0, 6.04, 163 MΩ
16.51 n = 4: 643 kΩ, 0.25, 27.8, 14.8 MΩ
16.52 40.0 µA, 335 MΩ; 13.4 kV; 2.81 V
16.54 2 µA or 5%, 12.5 nA
16.57 (b) 50 µA, 240 MΩ; 12.0 kV; 3.05 V
37
16.60 193 µA, 171 MΩ, 3300 V; 2VBE = 1.40 V
16.63 2.50 kΩ
16.65
€
≅ βoro4 2
16.66 (a) 102 GΩ
16.67 (a) 51.0 GΩ
16.73 (a) 66.5 µA, 3.07 MΩ
16.75 5.86 kΩ
16.77 317 µA; 295 µA; 43.7 µA
16.80 13.2 kΩ, 332 kΩ
16.82 8.48 kΩ, 449 kΩ
16.84 IC1 =111 µA, IC2 = 37.9 µA, SVCCIC1 = 0.147, SVCC
IC 2 = 0.0496
16.86 n > 1/3
16.88 38.9 µA
16.90 (b) ID1 = 8.19 µA ID2 = 7.24 µA
€
SVDD
I D1 = 7.75x10−2 SVDD
I D 2 = 6.31x10−2 The currents differ considerably from the hand calculations. The currents are quite
sensitive to the value of λ. The hand calculations used λ = 0. If the simulations are run with λ = 0, then the results are identical to the hand calculations.
16.92 4.57 µA, 11.4 µA, 3.16 µA, 22.9 µA, 2.91 µA
16.94 IC2 = 18.3 µA IC1 = 34.1 µA - Similar to hand calculations.
€
SVCC
IC1 = 9.36x10−3 SVCC
IC 2 = 2.64x10−3
16.96 (a) 331 µA, 220 µA
16.98 (a) 199 µA, 166 µA
16.101 1.20 V, 304.9 K
16.103 4.90 V, 327.4 K
16.104 5.07 V, +44.0 µV/K
16.106 -472 µV/K, -199 µV/K
16.109 60.9, 9.02 x10-5, 117 dB, ±8.2 V
16.111 90.9, 7.29 x10-5, 122 dB
16.113 1200, 4 x10-3, 110 dB, ±2.9 V
38
16.117 RSS = 25 ΜΩ (100 µA, 8.70 V), (100 µA, 8.70 V), (100 µA, -2.50 V), (100 µA, -1.25 V),
(100 µA, -1.25 V); 323; 152; 4.18 mV
16.119 (125 µA, 1.54 V), (125 µA, -2.79 V), (125 µA, 2.50 V), (125 µA, 1.25 V); 19600
16.123 171 µA
16.124 (b) 100 µA
16.125 (250 µA, 5.00 V), (250 µA, 5.00 V), (250 µA, -1.46 V), (250 µA, -1.46 V), (500 µA, -3.63 V), (97.7 µA, 5.00 V), (97.7 µA, -5.00 V), (250 µA, 1.75V), (500 µA, 3.54 V), (500 µA, 3.63 V), (500 µA, 3.54 V); 8340; 4170
16.127 (250 µA, 7.50 V), (250 µA, 7.50 V), (250 µA, -1.46 V), (250 µA, -1.46 V), (500 µA, -6.12 V), (99.2 µA, 7.50 V), (99.2 µA, -7.50 V), (500 µA, 2.75 V), (250 µA, 1.75 V), (500 µA, 5.75 V), (500 µA, 6.12 V), 3160. 278 µV
16.128 25300
16.131 (b) 31.2/1 (c) 39500
16.136 7.81, 703 Ω, 3.02 x 105, 75.0 kΩ
16.138 ±1.4 V, ±2.4 V
16.139 (a) 9.72 µA, 138 µA, 46.0 µA
16.140 271 kΩ, 255 Ω
16.142 VEE ≥ 2.8 V, VCC ≥ 1.4 V; 3.8 V, 2.4 V
16.144 2.84 MΩ, 356 kΩ. 6.11 x 105
16.147 (80 µA, 15.7 V), (80 µA, 15.7 V), (40 µA, -12.9 V), (40 µA, -0.700 V), (40 µA, -0.700 V), (40 µA, -12.9 V), (40 µA, 1.40 V), (40 µA, 1.40 V), (1.60 µA, 29.3 V), (80 µA, 0.700 V), (80 µA, 13.6 V); 0.800 mS, 940 kΩ
16.148 (37.5 µA, 15.7 V), (37.5 µA, 15.7 V), (37.5 µA, 12.9 V), (37.5 µA, 12.9 V), (37.5 µA, 1.40 V), (37.5 µA, 1.40 V), (0.75 µA, 29.3 V), (75 µA, 1.40 V), (0.75 µA, 0.700 V), (0.75 µA, 13.6 V); 0.750 mS, 1.15 MΩ
16.150 (50 µA, 2.50 V), (25 µA, 3.20 V)
16.151 (a) 125 µA, 75 µA, 62.5 µA, 37.5 µA,
16.146
€
500 −195sin5000πt( )µA, 500 +195sin5000πt( )µA; 0.488 mS
39
Chapter 17 17.1 Amid = 50, FL s( ) = s2
s+3( ) s+ 40( ), yes, Av s( ) ≈ 50 s
s+ 40( ), 6.37 Hz, 6.40 Hz
17.4 200,
€
1s
104+1
"
# $
%
& '
s
105+1
"
# $
%
& '
, yes, 1.59 kHz, 1.58 kHz
17.7 400, s2
(s+1)(s+ 2), 1
1+ s500
!
"#
$
%& 1+ s
1000!
"#
$
%&, 0.356 Hz, 71.2 Hz; 0.380 Hz, 66.7 Hz
17.9 (b) -20.4 (26.2 dB), 13.3 Hz
17.10 (b) -22.3, 10.7 Hz (c) 16.2 V
17.11 2.06 µF; 2.20 µF, 47.1 Hz
17.13 0.194 µF; 0.20 µF; 1940 Hz
17.14
€
Av s( ) = Amid
s2
s +ω1( ) s +ω2( ) | ω1 =
1
C1 RS + RE
1gm
#
$ %
&
' (
| ω2 =1
C2 RC + R3( ) | 2 zeros at ω = 0
27.2 dB, 369 Hz; -7.15 V, 7.60 V
17.16 123 Hz; 91 Hz; (144 µA, 3.67 V)
17.18 -131, 49.9 Hz, 12.0 V
17.19 53.4 Hz
17.21 7.23 dB, 12.7 Hz
17.23 +0.739, 11.9 Hz, 7.5 V
17.24 0.15 µF
17.25 3.9 µF
17.27 0.82 µF
17.29 0.33 µF
17.30 308 ps
17.33 (a) 22.5 GHz
17.35 750 Ω
17.36 −96.7; −110
40
17.37 0.976; 0.977
17.39 8.00∠− 90o; 272Ω∠− 23.0o
17.41 (a) −5000, −100.0, −4989, −122, 2% error (b) −250, −60.0, −150, −100, 60% error
17.43 Real roots: -100, -20, -15, -5
17.45 (0.924 mA, 2.16 V); -89.6, 1.45 MHz; 130 MHz
17.47 -20.4, 429 kHz; 4900Ω∠− 90o, 2.80∠− 90o
17.49 (0.834 mA, 2.41 V); -8.70, 3.22 MHz; 28.0 MHz
17.53 61.0 pF, 303 MHz
17.56 1/(4x104RC); 1/(4x105RC); -1/sRC
17.58 39.2 dB, 6.85 MHz
17.64 -120, 1.40 MHz; 168 MHz, 979 MHz
17.63 1.90 kΩ, -51.2, 204 MHz
17.64 -29.3, 7.41 MHz, 227 MHz
17.66 220 Ω, 1.1 kΩ, -15.9, 201 MHz
17.67 −1300; −92.3; −100, −1200
17.68 +8.44, 64.4 MHz
17.70 88.0, 1.72 MHz
17.73 2.96, 14.0 MHz
17.74 0.957, 13.6 MHz, 7.64 Hz
17.77 0.964, 114 MHz
17.80 -1.43 dB, 76.0 MHz
17.81 CGD + CGS/(1 + gm RL) for ω << ωT
17.83 Using a factor of 5 margin: 20 GHz, 7.96 ps
17.87 672 mA - not a realistic design. A different FET is needed.
17.89 (a) 393 kHz (b) 640 kHz
17.93 434 kHz
17.95 36.2 kHz
17.96 42.2 kHz
17.98 (a) 543 kHz
17.100 (a) 2.12 MHz
17.102 53.4 dB, 833 Hz, 526 kHz
41
17.103 1.63 MHz; 300 µH, 2.80 MHz
17.105 -45o; -118o; -105o
17.107 22.5 MHz, -41.1, 2.91
17.108 20.4 pF; 12.6; n = 2.81; 21.9 pF
17.109 15.9 MHz; 28.9 MHz
17.110 13.0 MHz, 7.18, 116/−90°; 4.36 MHz, 5.59, 51.3/−90°
17.111 10.1 MHz, 3.52, −33.3; 10.94 MHz, 6.86, -70.8
17.114 65 pF; 240, -4.41x104, 25.1 kHz
17.116 67.3 pF; 152 kHz, 40
17.118 (b) 497 Ω, 108 pF
17.119 100 Ω, 104 fF; 52.2 Ω, 144 fF
17.125 (a) 100 MHz, 1900 MHz
17.126 61.1 dB
17.129 -19.5 dB; -23.9 dB
17.131 0.6 A
17.133 -13.5 dB; -17.9 dB
17.135 0.1 A
17.137 1, 0.5, 0.5
17.139 0.567 V
17.142 0.2I1RC
42
Chapter 18 18.1 (b) 250, 3.984, 0.398%
18.3 1/40, 396.2, -38.90
18.5 97.5 dB
18.7 1/(1+T); 0.0995 %
18.9 (a) Series-series feedback (b) Shunt-shunt feedback
18.13 (a) 857 Ω, 33.3, 57.1, 506 Ω
18.15 25.9 Ω, 0, 0.952, 13.3 Ω
18.17 2.13x106, 24.8 S
18.19 2.53 mV
18.21 13.0, 8.76 MΩ, 1.54 Ω
18.23 31.1 Ω, 2.01, 17.9, 195 Ω
18.25 10.1, 252 kΩ, 358 Ω
18.27 2.66 Ω; (32.2 Ω, 0, 11.1)
18.29 132 Ω; (13.0 kΩ, 0, 97.6)
18.31 0.9989, 106.4 MΩ, 3.301 Ω vs. 0.999, 131 MΩ, 4.53 Ω
18.33 −36.0 kΩ, 7.60 Ω, 0.262 Ω
18.35 37.0 Ω, 50.4 Ω, −43.1 kΩ
18.37 34.1 kΩ, 1.72 kΩ, -625 kΩ
18.39 0.133 mS, 60.4 MΩ, 26.8 MΩ
18.41
€
SPICE Results : Atc = 9.92x10−5 S Rin =144.1 MΩ Rout =11.91 MΩ
Hand Calculations: Atc = 9.92x10−5 S Rin =148 MΩ Rout =11.1 MΩ
18.43 0.468 mS, 95.1 MΩ
18.44 10.1, 17.9 Ω, 3.34 MΩ
18.46 50.0 Ω, 5.63 MΩ, 0.993
18.47 14.92 MΩ, 399.8 MΩ, 540.1 MΩ
18.49 2.97, 14.5 Ω, 24.3 MΩ; 2.99, 14.6 Ω, 18.1 MΩ
18.51 30.39 GΩ; 33.3 GΩ
18.53 47.32 MΩ; 37.5 MΩ
43
18.55 Tv =106.3, Ti =15.93, T =13.62, R2 R1 = 6.34
18.57 Tv =1472, Ti =168, T =150.6, R2 R1 = 8.716
18.59 110 kHz, 2048, ≤ 2048
18.61 285 pF
18.63 76.6o
18.65 107o
18.69 6.63 MHz, 20.8 V/µS
18.72 (b) 95 MHz, 30 V/µS
18.74 ±8.57 V/µS, SPICE +8.1 V/µS, -8.8 V/µS
18.76 71.5 MHz, 11.3 kHz, 236 MHz, 326 MHz, 300 MHz; 84.4 dB; < 0; 16.8 pF
18.78 11.9 kΩ; 9.04 MHz, 101 MHz, 66.8 MHz, 286 MHz; 10.0 MHz, 11.3 pF
18.79 (a) 37o
18.82 6.32 pF; 315 MHz, 91.4 MHz; 89.4o
18.85 15.9 MHz; [18.4 MHz, 33.1 MHz]; 0.211 mS, 5.28 µA
18.86 5.45 MHz, 4.78 MHz
18.88 10.3 MHz, 1.18
18.90 7.96 MHz, 8.11 MHz, 1.05
18.92 7.5 MHz, 80 Vp-p
18.93 7.96 MHz
18.94 11.1 MHz, 18.1 MHz, 1.00
18.95
€
LEQ = L1 + L2 | REQ = −ω 2gmL1L2
18.97 ωo =1
L1 + L2 + 2M( )C
18.99
€
ωo2 =
1L C + CGS + 4CGD( )
| µf ≥1+ro
RP
18.101 5.13 pF; 1 GHz can't be achieved.
18.102 4.33 pF; 2.81 mA; 3.08 mA; 1.32 V
18.104 15.915 mH, 15.915 fF; 10.008 MHz, 10.003 MHz
18.106 9.281 MHz, 9.192 MHz
18.111 16.3 MHz
