Microwave & RF 22nd of March 2018

D. FLORIOT

� Introduction

� GaN technology roadmap

� GH15-10 : Up to Ka band

Outine

� GH10 : Towards high frequency (Q / V bands)

� GaN : Technology & Integration

2

UMS at a glance

� Open European source of RF MMIC solutions, GaAs and GaN foundry services

� Core mission: European source for Defense & Space III-V

� Industrial facilities in:

� Ulm (Germany): GaAs & GaN technology development and production

� Villebon (France): product development, back-end production and support

� 93 M€ turnover (2017) & profitable� 93 M€ turnover (2017) & profitable

� 420 people

� Long heritage of supplying to most demanding applications

3

UMS offer, markets & technology platform DEFENCE & SECURITY

•Phased array radar•Electronic warfare•Security applications

SPACE

•Communication satellites•Earth observation•Scientific mission

AUTOMOTIVE & SENSORS

•24/79GHz short range radar•77GHz long range radar•Sensors/road tolling

TELECOM

URE

URE

•Point to point radio links•VSAT terminals•Base stations

4

OFFERFOUNDRY SOLUTIONS

•Wafers & services•Packaging services

•Known good die and packages

PRODUCT SOLUTIONS•RF MMICs ASICs & standard products

•Die and packaged products•Multi-chip modules

TECHNOLOGY PLATFORMINTERNAL FOUNDRY

•European, ITAR free•GaAs & GaN technology

•specialised

EXTERNAL FOUNDRY•GaAs & SiGe technology

•High volume needs•Commercial applications

PACKAGING•Internal specialised•High volume QFN

•Hermetic and power

COMPETENCE NETWORK•Analysis capability

•R/D Institutes•partnerships

GaN Technology Portfolio

5

Interests regarding market

� GH15 – 10

� � up to 35 GHz

� Seen as an attractive technology to offer a better com promize Efficiency / Absolute Power for all marker drivers replacing spec ially GH25-10

� GH10

6

� � up to 55 GHz …. Replacement of GH15-10

� Market drivers :

� Defense, Space, Telecom (BTS, PtP, 5G)

� Architecture Driver:

� Active Antenna / MIMO

� But more and more full Si RF Transceiver solutions a re considered to fit agressive cost production & power reduction by emissi ve cell.

GaN technology vs 5G Bands

7

GH15-10 GH10-10

GH15 Technology

� Main technology features � AlGaN/GaN on SiC substrate

� 0.15-µm gate length

� 70 µm substrate thickness

� Source-Terminated Field-Plate transistors

� BCB protection available as option

GH15 technology

Parameter Minimum Nominal

9

Parameter Minimum Nominal

Power density @ 30GHz (W/mm) 3 3.5

PAE @ 30GHz (%) 35 40

Associated Power Gain @ 30 GHz 7.5 9

Minimum Drain Voltage bias 20 25

Ids+ (A/mm) > 1 > 1.2

Gm max (mS/mm) 380 450

Fmax (GHz) > 80 > 100

MTF (Median Time to Failure) 200° - 20 years 225°C – 20 years

Some GH15 results: 30-GHz LP measurements

� Performances at 30GHz, 20V:� Peak PAE=39%,

� Pout(5dBc)=3.6W/mm

� Glin=11dB

� Low gate current (< 20µA/mm @ 25V during power sweep) and good homogeneity

Example of results : 5samples 6x50µm at 25V, 200mA/mm, optimum Pout load

10

homogeneityAverage results at 200mA/mm and different Vd bias

Some GH15 results: 18-GHz LP measurements

� Performances at 18GHz, 20V:� Peak PAE> 55%,

� Pout(5dBc)=4.3W/mm

� Glin=15dB

Example of results: 3 samples 8x75µm, at 20V, 100mA/mm, Optimum PAE load

11

Average results at 100mA/mm and different Vd bias

Preliminary Results – Ka Band

12

Preliminary Results – Ku Band

13

� Early access in Q2 / 2018

� End of Qualification : Q3 / 2019� Including test to enter into the EPPL / ESA

GH15- 10 - Summary

� Including test to enter into the EPPL / ESA

14

GH10 Technology

� Strategy:� Short Gate length

� Material selection versus technical specifications, processing and supply chain need to be re-considered.

� Focus on InAlN, InGaAlN and AlN barrier with AlGaN as fallback

� Partnerships :

GH10 - Strategy

� 3-5lab, IEMN, IAF

� Different commercial suppliers

16

� Reduction of gate dimensions

to improve high frequency performance� Metallization thickness

� Gate length (�100-120nm) + gate head

� Ex InGaAlN epi with improved doping distance OhmSimilar IDS+

Gate dimension (T-gate)

� Similar IDS+

� Smaller dimensions� � more negative Vg100

� � higher Idl + IdlHV

� � lower Sth

� � higher PAE, P_out, Gt

17

UMS/IEMN LP 30 and 40 GHz comparison� Load-pull measurement 4x50µm LP at 40GHz (IEMN) and 30GHz

(UMS)

18

� Material choice represents a key step as being probably a base for next generation (W band).

� Early access in Q3-Q4 / 2019

GH10- 10 - Summary

� Early access in Q3-Q4 / 2019

� End of Qualification : Q4 / 2020

19

GaN technology & Integration

Multi-chip module

SIPMixed techno

Feasibility phase

SIPWafer level packaging

Mixed techno integrationInnovation integration

Application driven

� UMS – Change of “Paradigm” : Towards more integration

20

Bare die

Packaged single die

Multi-chip module

Mixed technologies:

GaAs, GaN, SiGe

Feasibility phase Innovation integration

Internal pilot lineExternal volume

capability

Move from a product based to a capability based off er

� Wafer Level integration of Heterogeneous technologies offer new perspectives for RF Front End Integration

Wafer Level System in Package & Integration breakthrough for Defence & Space applications

5G_GaN2

21

Demonstrators

� For UMS : to be the key supplier in integrated system of heterogeneous technologies� Cost Benefit due to collective approach at wafer level

� Down scaling in RF electronics at wafer level

� Concept of “One chip - One Front End Module”

Secured and long term access

GaN technology : A breakdown in integration scheme

� Secured and long term access

� Benefit for system platforms� Aerospace

� New generation of Radio / Telecom

� Missile

� Space & Satellite constellation

� Security systems (crypto communicaition)

22

� Route towards System In Package using Wafer Level Packaging approach

� GaN technology with adequate interfaces (bump, hot

GaN technology vs Integration

� GaN technology with adequate interfaces (bump, hot vias, Cu compliant)

� Breakdown in Integration / Cost / Supply chain

23

� Development partly funded by

� THANKS for your attention !

24