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* This document contains certain information on a new product. Specifications and information herein are subject to change without notice. Document Number: MMPF0100Z Rev. 12.0, 8/2016 NXP Semiconductors Data sheet: Advance Information © 2016 NXP B.V. 14 channel configurable power management integrated circuit The SMARTMOS PF0100Z AEC Q100 grade 2 automotive power management integrated circuit (PMIC) provides a highly programmable/ configurable architecture, with fully integrated power devices and minimal external components. With up to six buck converters, six linear regulators, RTC supply, and coin-cell charger, the PF0100Z can provide power for a complete system, including applications processors, memory, and system peripherals, in a wide range of applications. With on-chip one time programmable (OTP) memory, the PF0100Z is available in pre-programmed standard versions, or non- programmed to support custom programming. The PF0100Z is especially suited to the i.MX 6 family of devices and is supported by full system level reference designs, and pre-programmed versions of the device. Features: Four to six buck converters, depending on configuration Single/dual phase/ parallel options DDR termination tracking mode option Boost regulator to 5.0 V output Six general purpose linear regulators Programmable output voltage, sequence, and timing OTP (one time programmable) memory for device configuration Coin cell charger and RTC supply DDR termination reference voltage Power control logic with processor interface and event detection I 2 C control Individually programmable on, off, and standby modes Figure 1. Simplified application diagram POWER MANAGEMENT PF0100Z Applications: GPS Auto infotainment Heads up display (HUD) Rear displays Digital instrumentation cluster (DIC) Automotive ES SUFFIX (WF-TYPE) 98ASA00589D 56 QFN 8X8 VGEN3 100 mA VGEN5 100 mA Camera Audio Codec Cluster/HUD External AMP Microphones Speakers Front USB POD Rear USB POD Rear Seat Infotaiment Sensors i.MX 6X I 2 C Communication I 2 C Communication PF0100Z Control Signals Parallel control/GPIOS LICELL Charger COINCELL Main Supply 2.8 – 4.5 V VGEN1 100 mA VGEN2 250 mA VGEN4 350 mA VGEN6 200 mA SWBST 600 mA SW3A/B 2500 mA SW1C 2000 mA SW1A/B 2500 mA SW2 2000 mA SW4 1000 mA GPS MIPI uPCIe SATA - FLASH NAND - NOR Interfaces Processor Core Voltages Camera VREFDDR DDR Memory DDR MEMORY INTERFACE SD-MMC/ NAND Mem. SATA HDD WAM GPS MIPI HDMI LDVS Display USB Ethernet CAN

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Page 1: MMPF0100Z, 14 Channel Configurable Power Management ...Max rating Type Definition 1 INTB O 3.6 V Digital Open drain interrupt signal to processor 2 SDWNB O 3.6 V Digital Open drain

* This document contains certain information on a new product. Specifications and information herein are subject to change without notice.

Document Number: MMPF0100ZRev. 12.0, 8/2016

NXP Semiconductors Data sheet: Advance Information

© 2016 NXP B.V.

14 channel configurable power management integrated circuitThe SMARTMOS PF0100Z AEC Q100 grade 2 automotive power management integrated circuit (PMIC) provides a highly programmable/ configurable architecture, with fully integrated power devices and minimal external components. With up to six buck converters, six linear regulators, RTC supply, and coin-cell charger, the PF0100Z can provide power for a complete system, including applications processors, memory, and system peripherals, in a wide range of applications. With on-chip one time programmable (OTP) memory, the PF0100Z is available in pre-programmed standard versions, or non-programmed to support custom programming. The PF0100Z is especially suited to the i.MX 6 family of devices and is supported by full system level reference designs, and pre-programmed versions of the device.

Features:

• Four to six buck converters, depending on configuration• Single/dual phase/ parallel options• DDR termination tracking mode option

• Boost regulator to 5.0 V output• Six general purpose linear regulators• Programmable output voltage, sequence, and timing• OTP (one time programmable) memory for device configuration• Coin cell charger and RTC supply• DDR termination reference voltage• Power control logic with processor interface and event detection• I2C control• Individually programmable on, off, and standby modes

Figure 1. Simplified application diagram

POWER MANAGEMENT

PF0100Z

Applications:

• GPS• Auto infotainment• Heads up display (HUD)• Rear displays• Digital instrumentation cluster (DIC)

Automotive

ES SUFFIX (WF-TYPE)98ASA00589D

56 QFN 8X8

VGEN3 100 mA

VGEN5 100 mA

Camera

AudioCodec

Cluster/HUD

External AMPMicrophones

Speakers

Front USB POD

Rear USB POD

Rear Seat Infotaiment

Sensors

i.MX 6X

I2C Communication I2C Communication

PF0100Z

Control Signals Parallel control/GPIOS

LICELL Charger

COINCELLMain Supply2.8 – 4.5 V

VGEN1 100 mA

VGEN2 250 mA

VGEN4 350 mA

VGEN6 200 mA

SWBST600 mA

SW3A/B2500 mA

SW1C 2000 mA

SW1A/B 2500 mA

SW2 2000 mA

SW4 1000 mA

GPSMIPI

uPCIe

SATA - FLASHNAND - NOR

Interfaces

Processor CoreVoltages

Camera

VREFDDR

DDR Memory DDR MEMORY INTERFACE

SD-MMC/NAND Mem.

SATA HDD

WAMGPSMIPI

HDMILDVS Display

USBEthernet

CAN

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2 NXP Semiconductors

PF0100Z

Table of Contents

1 Orderable parts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2 Internal block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Pin connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3.1 Pinout diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3.2 Pin definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

4 General product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4.2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.2.1 Power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4.3.1 General Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4.3.2 Current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

5 General description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

5.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

5.2 Functional block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

5.3 Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

5.3.1 Power generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

5.3.2 Control logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

6 Functional block requirements and behaviors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

6.1 Start-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

6.1.1 Device start-up configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

6.1.2 One time programmability (OTP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

6.1.3 OTP prototyping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

6.1.4 Reading OTP fuses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

6.1.5 Programming OTP fuses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

6.2 16 MHz and 32 kHz clocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

6.2.1 Clock adjustment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

6.3 Bias and references block description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

6.3.1 Internal core voltage references . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

6.3.2 VREFDDR voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

6.4 Power generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

6.4.1 Modes of operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

6.4.2 State machine flow summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

6.4.3 Power tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

6.4.4 Buck regulators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

6.4.5 Boost regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72

6.4.6 LDO regulators description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75

6.4.7 VSNVS LDO/switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90

6.5 Control interface I2C block description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95

6.5.1 I2C device ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95

6.5.2 I2C operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95

6.5.3 Interrupt handling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96

6.5.4 Interrupt bit summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96

6.5.5 Specific registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101

6.5.6 Register Bitmap . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102

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NXP Semiconductors 3

PF0100Z

7 Typical applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113

7.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113

7.1.1 Application diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113

7.1.2 Bill of materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114

7.2 PF0100Z layout guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117

7.2.1 General board recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117

7.2.2 Component placement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117

7.2.3 General routing requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117

7.2.4 Parallel routing requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118

7.2.5 Switching regulator layout recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118

7.3 Thermal information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119

7.3.1 Rating data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119

7.3.2 Estimation of junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120

8 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121

8.1 Packaging dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121

9 Reference section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125

9.1 Reference documents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125

10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126

10.1 Document changes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126

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4 NXP Semiconductors

PF0100Z

ORDERABLE PARTS

1 Orderable parts

The PF0100Z is available with both pre-programmed and non-programmed OTP memory configurations. The non-programmed device uses “NP” as the programming code. The pre-programmed devices are identified using the program codes from Table 1, which also list the associated NXP reference designs where applicable. Details of the OTP programming for each device can be found in Table 9.

1.1 PF0100Z version differences

PF0100AZ is an improved version of the PF0100Z power management IC. Table 2 summarizes the difference between the two versions and should be referred to when migrating from the PF0100Z to the PF0100AZ.

Table 1. Orderable part variations

Part Number Temperature (TA) Package Programming Reference designs Notes

MMPF0100NPAZES

-40 °C to 105 °C56 QFN ES, 8x8 mm

0.5 mm pitch WF-Type(wettable flank)

NPMCIMX6QAICPU1 MCIMX6SAICPU1 MCIMX6DLAICPU1

(1), (2), (3)

MMPF0100F0AZES F0MCIMX6Q-SDPMCIMX6Q-SDBMCIMX6DL-SDP

(1), (2)

MMPF0100F6AZES F6 -

MMPF0100F8AZES F8 -

MMPF0100F9AZES F9 MCIMX6QPlusAICPU3(1), (2), (3)

MMPF0100FAAZES FA -

Notes1. For tape and reel add an R2 suffix to the part number.2. These reference designs use the default startup configuration (VDDOTP = VCOREDIG), which is available on any OTP programmed part.3. SW2 can support an output current rating of 2.5 A in NP, F9 and FA versions when SW2ILIM=0

Table 2. Differences between PF0100Z and PF0100AZ

Description PF0100Z PF0100AZ

Version identificationReading SILICON REV register at address 0x03 will return 0x11. DEVICEID register at address 0x00 will read 0x10 in PF0100Z and PF0100AZ

Reading SILICON REV register at address 0x03 will return 0x21. DEVICEID register at address 0x00 will read 0x10 in PF0100Z and PF0100AZ

VSNVS current limit VSNVS current limit increased in the PF0100AZ. see VSNVS LDO/switch

OTP_FUSE_PORx register setting during OTP programming

In the PF0100Z, FUSE_POR1, FUSE_POR2, and FUSE_POR3 bits are XOR’ed into the FUSE_POR_XOR bit. The FUSE_POR_XOR bit has to be 1 for fuses to be loaded during startup. This can be achieved by setting any one or all of the FUSE_PORx bits during OTP programming.

In the PF0100AZ, the XOR function is removed. It is required to set FUSE_POR1, FUSE_POR2, and FUSE_POR3 bits during OTP programming.

Erratum ER19

Erratum ER19 applicable to PF0100Z. Applications expecting to operate in the conditions mentioned in ER19 need to implement an external workaround to overcome the problem. Refer to the product errata for details

Errata ER19 fixed in PF0100AZ. External workaround not required

Erratum ER20 Erratum ER20 applicable to PF0100Z Errata ER20 fixed in PF0100AZ

Erratum ER22 Erratum ER22 applicable to PF0100ZErrata ER22 fixed in PF0100AZ. Workaround not required

Ambient operating temperature -40 °C to 85 °C -40 °C to 105 °C

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NXP Semiconductors 5

PF0100Z

INTERNAL BLOCK DIAGRAM

2 Internal block diagram

Figure 2. Simplified internal block diagram

VIN

INT

B

LICELL

SWBSTFB

SWBSTIN

SWBSTLXO/P

DriveSWBST600 mABoost

PW

RO

N

ST

AN

DB

Y

ICT

ES

T

SCL

SDA

VDDIO

SW3A/BSingle/Dual

DDR2500 mA

Buck

VCOREDIG

VCOREREF

SD

WN

B

GNDREF

SW1CFB

SW1AIN

SW1C 2000 mA

Buck

SW1FB

SW1ALX

SW1BLX

SW1A/B Single/Dual

2500 mA Buck

SW1VSSSNS

VSNVS

VS

NV

S

Li Cell Charger

RE

SE

TB

MC

USW2

2000 mA Buck

VGEN1 100 mA

VGEN1

VIN1

VGEN2 250 mA

VGEN2

VGEN3 100 mAVGEN3

VIN2

VGEN4 350 mAVGEN4

VGEN5 100 mA

VGEN5

VIN3

VGEN6 200 mAVGEN6

Best of

Supply

OTP

SW4 1000 mA

Buck

VREFDDR

VDDOTP

VINREFDDR

VHALF

VCORE

PF0100Z

CONTROL

Clocks32 kHz and 16 MHz

Initialization State Machine

I2C Interface

Clocks and resets

I2C Register map

Trim-In-Package

O/PDrive

O/PDrive SW1BIN

SW1CLXO/PDrive SW1CIN

SW2FB

SW2LXO/P

Drive SW2IN

SW2IN

SW3AIN

SW3AFB

SW3ALX

SW3BLX

O/PDrive

O/PDrive SW3BIN

SW3BFB

SW3VSSSNS

SW4IN

SW4FB

SW4LX

O/PDrive

Supplies Control

DVS ControlDVS CONTROL

Reference Generation

Core Control logic

GNDREF1

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6 NXP Semiconductors

PF0100Z

PIN CONNECTIONS

3 Pin connections

3.1 Pinout diagram

Figure 3. Pinout diagram

1

2

3

4

5

6

7

8

9

10

11

12

13

14

4344454647484950515253545556

42

41

40

39

38

37

36

35

34

33

32

31

30

29

2827262524232221201918171615

INTB

SDWNB

RESETBMCU

STANDBY

ICTEST

SW1FB

SW1AIN

SW1ALX

SW1BLX

SW1BIN

SW1CLX

SW1CIN

SW1CFB

SW1VSSSNS

LICELL

VGEN6

VIN3

VGEN5

SW3AFB

SW3AIN

SW3ALX

SW3BLX

SW3BIN

SW3BFB

SW3VSSSNS

VREFDDR

VINREFDDR

VHALF

PW

RO

N

VD

DIO

SC

L

SD

A

VC

OR

ER

EF

VC

OR

ED

IG

VIN

VC

OR

E

GN

DR

EF

VD

DO

TP

SW

BS

TLX

SW

BS

TIN

SW

BS

TF

B

VS

NV

S

GN

DR

EF

1

VG

EN

1

VIN

1

VG

EN

2

SW

4FB

SW

4IN

SW

4LX

SW

2LX

SW

2IN

SW

2IN

SW

2FB

VG

EN

3

VIN

2

VG

EN

4

EP

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NXP Semiconductors 7

PF0100Z

PIN CONNECTIONS

3.2 Pin definitions

Table 3. PF0100Z pin definitions

Pin number Pin namePin

functionMax rating Type Definition

1 INTB O 3.6 V Digital Open drain interrupt signal to processor

2 SDWNB O 3.6 V Digital Open drain signal to indicate an imminent system shutdown

3 RESETBMCU O 3.6 V DigitalOpen drain reset output to processor. Alternatively can be used as a power good output.

4 STANDBY I 3.6 V Digital Standby input signal from processor

5 ICTEST I 7.5 VDigital/Analog

Reserved pin. Connect to GND in application.

6 SW1FB (5) I 3.6 V AnalogOutput voltage feedback for SW1A/B. Route this trace separately from the high current path and terminate at the output capacitance.

7 SW1AIN (5) I 4.8 V AnalogInput to SW1A regulator. Bypass with at least a 4.7 μF ceramic capacitor and a 0.1 μF decoupling capacitor as close to the pin as possible.

8 SW1ALX (5) O 4.8 V Analog Regulator 1A switch node connection

9 SW1BLX (5) O 4.8 V Analog Regulator 1B switch node connection

10 SW1BIN (5) I 4.8 V Analog Input to SW1B regulator. Bypass with at least a 4.7 μF ceramic capacitor and a 0.1 μF decoupling capacitor as close to the pin as possible.

11 SW1CLX (5) O 4.8 V Analog Regulator 1C switch node connection

12 SW1CIN (5) I 4.8 V Analog Input to SW1C regulator. Bypass with at least a 4.7 μF ceramic capacitor and a 0.1 μF decoupling capacitor as close to the pin as possible.

13 SW1CFB (5) I 3.6V AnalogOutput voltage feedback for SW1C. Route this trace separately from the high current path and terminate at the output capacitance.

14 SW1VSSSNS GND - GNDGround reference for regulators SW1ABC. It is connected externally to GNDREF through a board ground plane.

15 GNDREF1 GND - GNDGround reference for regulators SW2 and SW4. It is connected externally to GNDREF, via board ground plane.

16 VGEN1 O 2.5 V Analog VGEN1 regulator output, Bypass with a 2.2 μF ceramic output capacitor.

17 VIN1 I 3.6 V AnalogVGEN1, 2 input supply. Bypass with a 1.0 μF decoupling capacitor as close to the pin as possible.

18 VGEN2 O 2.5 V Analog VGEN2 regulator output, Bypass with a 4.7 μF ceramic output capacitor.

19 SW4FB (5) I 3.6 V AnalogOutput voltage feedback for SW4. Route this trace separately from the high current path and terminate at the output capacitance.

20 SW4IN (5) I 4.8 V Analog Input to SW4 regulator. Bypass with at least a 4.7 μF ceramic capacitor and a 0.1 μF decoupling capacitor as close to the pin as possible.

21 SW4LX (5) O 4.8 V Analog Regulator 4 switch node connection

22 SW2LX (5) O 4.8 V Analog Regulator 2 switch node connection

23 SW2IN (5) I 4.8 V Analog Input to SW2 regulator. Connect pin 23 together with pin 24 and bypass with at least a 4.7 μF ceramic capacitor and a 0.1 μF decoupling capacitor as close to these pins as possible.24 SW2IN (5) I 4.8 V Analog

25 SW2FB (5) I 3.6 V AnalogOutput voltage feedback for SW2. Route this trace separately from the high current path and terminate at the output capacitance.

26 VGEN3 O 3.6 V Analog VGEN3 regulator output. Bypass with a 2.2 μF ceramic output capacitor.

27 VIN2 I 3.6 V AnalogVGEN3,4 input. Bypass with a 1.0 μF decoupling capacitor as close to the pin as possible.

28 VGEN4 O 3.6 V Analog VGEN4 regulator output, Bypass with a 4.7 μF ceramic output capacitor.

29 VHALF I 3.6 V Analog Half supply reference for VREFDDR

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8 NXP Semiconductors

PF0100Z

PIN CONNECTIONS

30 VINREFDDR I 3.6 V AnalogVREFDDR regulator input. Bypass with at least 1.0 μF decoupling capacitor as close to the pin as possible.

31 VREFDDR O 3.6 V Analog VREFDDR regulator output

32 SW3VSSSNS GND - GNDGround reference for the SW3 regulator. Connect to GNDREF externally via the board ground plane.

33 SW3BFB (5) I 3.6 V AnalogOutput voltage feedback for SW3B. Route this trace separately from the high current path and terminate at the output capacitance.

34 SW3BIN (5) I 4.8 V AnalogInput to SW3B regulator. Bypass with at least a 4.7 μF ceramic capacitor and a 0.1 μF decoupling capacitor as close to the pin as possible.

35 SW3BLX (5) O 4.8 V Analog Regulator 3B switch node connection

36 SW3ALX (5) O 4.8 V Analog Regulator 3A switch node connection

37 SW3AIN (5) I 4.8 V AnalogInput to SW3A regulator. Bypass with at least a 4.7 μF ceramic capacitor and a 0.1 μF decoupling capacitor as close to the pin as possible.

38 SW3AFB (5) I 3.6 V AnalogOutput voltage feedback for SW3A. Route this trace separately from the high current path and terminate at the output capacitance.

39 VGEN5 O 3.6 V Analog VGEN5 regulator output. Bypass with a 2.2 μF ceramic output capacitor.

40 VIN3 I 4.8 V AnalogVGEN5, six input. Bypass with a 1.0 μF decoupling capacitor as close to the pin as possible.

41 VGEN6 O 3.6 V Analog VGEN6 regulator output. By pass with a 2.2 μF ceramic output capacitor.

42 LICELL I/O 3.6 V Analog Coin cell supply input/output

43 VSNVS O 3.6 V Analog LDO or coin cell output to processor

44 SWBSTFB (5) I 5.5 V AnalogBoost regulator feedback. Connect this pin to the output rail close to the load. Keep this trace away from other noisy traces and planes.

45 SWBSTIN (5) I 4.8 V AnalogInput to SWBST regulator. Bypass with at least a 2.2 μF ceramic capacitor and a 0.1 μF decoupling capacitor as close to the pin as possible.

46 SWBSTLX (5) O 7.5 V Analog SWBST switch node connection

47 VDDOTP I 10 V(4) Digital &Analog

Supply to program OTP fuses

48 GNDREF GND - GND Ground reference for the main band gap regulator.

49 VCORE O 3.6 V Analog Analog core supply

50 VIN I 4.8 V Analog Main chip supply

51 VCOREDIG O 1.5 V Analog Digital core supply

52 VCOREREF O 1.5 V Analog Main band gap reference

53 SDA I/O 3.6 V Digital I2C data line (open drain)

54 SCL I 3.6 V Digital I2C clock

55 VDDIO I 3.6 V Analog Supply for I2C bus

56 PWRON I 3.6 V Digital Power on/off from processor

- EP GND - GNDExpose pad. Functions as ground return for buck regulators. Tie this pad to the inner and external ground planes through vias to allow effective thermal dissipation.

Notes4. 10 V Maximum voltage rating during OTP fuse programming. 7.5 V Maximum DC voltage rated otherwise.5. Unused switching regulators should be connected as follows: Pins SWxLX and SWxFB should be unconnected and pin SWxIN should be

connected to VIN with a 0.1 μF bypass capacitor.

Table 3. PF0100Z pin definitions (continued)

Pin number Pin namePin

functionMax rating Type Definition

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NXP Semiconductors 9

PF0100Z

GENERAL PRODUCT CHARACTERISTICS

4 General product characteristics

4.1 Absolute maximum ratings

Table 4. Absolute maximum ratings All voltages are with respect to ground, unless otherwise noted. Exceeding these ratings may cause malfunction or permanent damage to the device. The detailed maximum voltage rating per pin can be found in the pin list section.

Symbol Description Value Unit Notes

Electrical ratings

VIN Main input supply voltage -0.3 to 4.8 V

VDDOTP OTP programming input supply voltage -0.3 to 10 V

VLICELL Coin cell voltage -0.3 to 3.6 V

VESD

ESD ratingsHuman body model

VSNVS pinAll other pins

Charge device model

±1800±2000±500

V (6)

Notes6. ESD testing is performed in accordance with the human body model (HBM) (CZAP = 100 pF, RZAP = 1500 Ω), and the charge device model (CDM),

robotic (CZAP = 4.0 pF).

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10 NXP Semiconductors

PF0100Z

GENERAL PRODUCT CHARACTERISTICS

4.2 Thermal characteristics

4.2.1 Power dissipation During operation, the temperature of the die should not exceed the operating junction temperature noted in Table 5. To optimize the thermal management and to avoid overheating, the PF0100Z provides thermal protection. An internal comparator monitors the die temperature. Interrupts THERM110I, THERM120I, THERM125I, and THERM130I are generated when the respective thresholds specified in Table 6 are crossed in either direction. The temperature range can be determined by reading the THERMxxxS bits in register INTSENSE0.

In the event of excessive power dissipation, thermal protection circuitry shuts down the PF0100Z. This thermal protection acts above the thermal protection threshold listed in Table 6. To avoid any unwanted power downs resulting from internal noise, the protection is debounced for 8.0 ms. This protection should be considered as a fail-safe mechanism and therefore the system should be configured so this protection is not tripped under normal conditions.

Table 5. Thermal ratings

Symbol Description (rating) Min. Max. Unit Notes

Thermal ratings

TA

Ambient operating temperature rangePF0100ZPF0100AZ

-40-40

85105

°C

TJ Operating junction temperature range -40 125 °C (7)

TST Storage temperature range -65 150 °C

TPPRT Peak package reflow temperature – Note 9 °C (8)(9)

QFN56 thermal resistance and package dissipation ratings

RθJA

Junction to ambient Natural convectionFour layer board (2s2p)Eight layer board (2s6p)

––

2815

°C/W (10)(11)(12)

RθJMAJunction to ambient (at 200 ft/min)

Four layer board (2s2p) – 22°C/W (10)(12)

RθJB Junction to board – 10 °C/W (13)

RΘJCBOTTOM Junction to case bottom – 1.2 °C/W (14)

ΨJTJunction to package top

Natural convection– 2.0 °C/W (15)

Notes

7. Do not operate beyond 125 °C for extended periods of time. Operation above 150 °C may cause permanent damage to the IC. See Table 6 for thermal protection features.

8. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause a malfunction or permanent damage to the device.

9. NXP’s package reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For peak package reflow temperature and moisture sensitivity levels (MSL), go to www.nxp.com, search by part number (remove prefixes/suffixes) and enter the core ID to view all orderable parts, and review parametrics.

10. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance.

11. The Board uses the JEDEC specifications for thermal testing (and simulation) JESD51-7 and JESD51-5.12. Per JEDEC JESD51-6 with the board horizontal.13. Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured on the top surface of the

board near the package.14. Thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC-883 Method 1012.1).15. Thermal characterization parameter indicating the temperature difference between package top and the junction temperature per JEDEC JESD51-

2. When the Greek letter (Ψ) is not available, the thermal characterization parameter is written as Psi-JT.

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NXP Semiconductors 11

PF0100Z

GENERAL PRODUCT CHARACTERISTICS

4.3 Electrical characteristics

4.3.1 General Specifications

Table 6. Thermal protection thresholds

Parameter Min. Typ. Max. Units Notes

Thermal 110 °C threshold (THERM110) 100 110 120 °C

Thermal 120 °C threshold (THERM120) 110 120 130 °C

Thermal 125 °C threshold (THERM125) 115 125 135 °C

Thermal 130 °C threshold (THERM130) 120 130 140 °C

Thermal warning hysteresis 2.0 – 4.0 °C

Thermal protection threshold 130 140 150 °C

Table 7. General PMIC Static Characteristics

PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 2.8 V to 4.5 V, VDDIO = 1.7 V to 3.6 V, typical external component values and full load current range, unless otherwise noted.

Pin name Parameter Load condition Min. Max. Unit

PWRONVIL – 0.0 0.2 * VSNVS V

VIH – 0.8 * VSNVS 3.6 V

RESETBMCUVOL -2.0 mA 0.0 0.4 V

VOH Open drain 0.7* VIN VIN V

SCLVIL – 0.0 0.2 * VDDIO V

VIH – 0.8 * VDDIO 3.6 V

SDA

VIL – 0.0 0.2 * VDDIO V

VIH – 0.8 * VDDIO 3.6 V

VOL -2.0 mA 0.0 0.4 V

VOH Open drain 0.7*VDDIO VDDIO V

INTBVOL -2.0 mA 0.0 0.4 V

VOH Open drain 0.7* VIN VIN V

SDWNBVOL -2.0 mA 0.0 0.4 V

VOH Open drain 0.7* VIN VIN V

STANDBYVIL – 0.0 0.2 * VSNVS V

VIH – 0.8 * VSNVS 3.6 V

VDDOTPVIL – 0.0 0.3 V

VIH – 1.1 1.7 V

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12 NXP Semiconductors

PF0100Z

GENERAL PRODUCT CHARACTERISTICS

4.3.2 Current consumptionThe current consumption of the individual blocks is described in detail throughout this specification. For convenience, a summary table follows for standard use cases.

Table 8. Current consumption summary

PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VDDIO = 1.7 V to 3.6 V, LICELL = 1.8 V to 3.3 V, VSNVS = 3.0 V, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, VDDIO = 3.3 V, LICELL = 3.0 V, VSNVS = 3.0 V and 25 °C, unless otherwise noted.

Mode PF0100Z conditions System conditions Typ. Max. Unit Notes

Coin Cell

VSNVS from LICELL All other blocks offVIN = 0.0 VVSNVSVOLT[2:0] = 110

No load on VSNVS 4.0 7.0 μA(16),(18),

(21)

Off MMPF0100Z

VSNVS from VIN or LICELL Wake-up from PWRON active 32 k RC on All other blocks offVIN ≥ UVDET

No load on VSNVS, PMIC able to wake-up 16 21 μA (17),(18)

Off MMPF0100AZ

VSNVS from VIN or LICELL Wake-up from PWRON active 32 k RC on All other blocks offVIN ≥ UVDET

No load on VSNVS, PMIC able to wake-up 17 25 μA (17),(18)

Sleep

VSNVS from VIN Wake-up from PWRON active Trimmed reference active SW3A/B PFM Trimmed 16 MHz RC off 32 k RC on VREFDDR disabled

TA = -40 °C to 85 °CTA = -40 °C to 105 °C (PF0100AZ Only)

No load on VSNVS. DDR memories in self refresh

122122

220250

μA (18)

Standby MMPF0100Z

VSNVS from either VIN or LICELL SW1A/B combined in PFM SW1C in PFM SW2 in PFM SW3A/B combined in PFM SW4 in PFM SWBST off Trimmed 16 MHz RC enabled Trimmed reference active VGEN1-6 enabled VREFDDR enabled

No load on VSNVS. Processor enabled in low power mode. All rails powered on except boost (load = 0 mA)

297

297

450 (19)

1000 (20)μA (18)

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NXP Semiconductors 13

PF0100Z

GENERAL PRODUCT CHARACTERISTICS

Figure 4. Current overtemperature waveforms

Standby MMPF0100AZ

VSNVS from either VIN or LICELL SW1A/B combined in PFM SW1C in PFM SW2 in PFM SW3A/B combined in PFM SW4 in PFM SWBST off Trimmed 16 MHz RC enabled Trimmed reference active VGEN1-6 enabled VREFDDR enabled

TA = -40 °C to 85 °CTA = -40 °C to 105 °C

No load on VSNVS. Processor enabled in low power mode. All rails powered on except boost (load = 0 mA)

297297

450550

μA (18)

Notes16. Refer to Figure 4 for coin cell mode characteristics over temperature.17. When VIN is below the UVDET threshold, in the range of 1.8 V ≤ VIN < 2.65 V, the quiescent current increases by 50 μA, typically.

18. For PFM operation, headroom should be 300 mV or greater.19. From 0 °C to 85 °C20. From -40 °C to 85 °C21. Additional current may be drawn in the coin cell mode when RESETBMCU is pulled up to VSNVS due an internal path from RESETBMCU to VIN.

The additional current is <30 μA with a pull up resistor of 100 kΩ. The i.MX 6x processors have an internal pull up from the POR_B pin to the VDD_SNVS_IN pin. For i.MX 6x applications, if additional current in the coin cell mode is not desired, use an external switch to disconnect the RESETBMCU path when VIN is removed. For non-i.MX 6 applications, pull-up RESETBMCU to a rail that is off in the coin cell mode.

Table 8. Current consumption summary (continued)

PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VDDIO = 1.7 V to 3.6 V, LICELL = 1.8 V to 3.3 V, VSNVS = 3.0 V, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, VDDIO = 3.3 V, LICELL = 3.0 V, VSNVS = 3.0 V and 25 °C, unless otherwise noted.

Coi

n ce

ll m

ode

cur

ren

t (μA

)

Coin cell mode

1

10

100

-40 -20 0 20 40 60 80

Temperature (oC)

MMPF0100

MMPF0100A

Temperature (°C)

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14 NXP Semiconductors

PF0100Z

GENERAL DESCRIPTION

5 General description

The PF0100Z is the power management integrated circuit (PMIC) designed primarily for use with NXP’s i.MX 6 series of application processors.

5.1 Features

This section summarizes the PF0100Z features.

• Input voltage range to PMIC: 2.8 V - 4.5 V• Buck regulators

• Four to six channel configurable• SW1A/B/C, 4.5 A (single); 0.3 V to 1.875 V• SW1A/B, 2.5 A (single/dual); SW1C 2.0 A (independent); 0.3 V to 1.875 V• SW2, 2.0 A; 0.4 V to 3.3 V (2.5 A; 1.2 V to 3.3 V (22))• SW3A/B, 2.5 A (single/dual); 0.4 V to 3.3 V• SW3A, 1.25 A (independent); SW3B, 1.25 A (independent); 0.4 V to 3.3 V• SW4, 1.0 A; 0.4 V to 3.3 V• SW4, VTT mode provide DDR termination at 50% of SW3A

• Dynamic voltage scaling• Modes: PWM, PFM, APS• Programmable output voltage• Programmable current limit• Programmable soft start• Programmable PWM switching frequency• Programmable OCP with fault interrupt

• Boost regulator• SWBST, 5.0 V to 5.15 V, 0.6 A, OTG support• Modes: PFM and Auto• OCP fault interrupt

• LDOs • Six user programable LDO

• VGEN1, 0.80 V to 1.55 V, 100 mA• VGEN2, 0.80 V to 1.55 V, 250 mA• VGEN3, 1.8 V to 3.3 V, 100 mA• VGEN4, 1.8 V to 3.3 V, 350 mA• VGEN5, 1.8 V to 3.3 V, 100 mA• VGEN6, 1.8 V to 3.3 V, 200 mA

• Soft start• LDO/switch supply

• VSNVS (1.0/1.1/1.2/1.3/1.5/1.8/3.0 V), 400 μA• DDR memory reference voltage

• VREFDDR, 0.6 V to 0.9 V, 10 mA• 16 MHz internal master clock• OTP (one time programmable) memory for device configuration

• User programmable start-up sequence and timing• Battery backed memory including coin cell charger• I2C interface• User programmable standby, sleep, and off modes

Notes22. SW2 capable of 2.5 A in NP/F9/FA versions

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PF0100Z

GENERAL DESCRIPTION

5.2 Functional block diagram

Figure 5. Functional block diagram

5.3 Functional description

5.3.1 Power generationThe PF0100Z PMIC features four buck regulators (up to six independent outputs), one boost regulator, six general purpose LDOs, one switch/LDO combination, and a DDR voltage reference to supply voltages for the application processor and peripheral devices.

The number of independent buck regulator outputs can be configured from four to six, thereby providing flexibility to operate with higher current capability, or to operate as independent outputs for applications requiring more voltage rails with lower current demands. Further, SW1 and SW3 regulators can be configured as single/dual phase and/or independent converters. One of the buck regulators, SW4, can also operate as a tracking regulator when used for memory termination. The buck regulators provide the supply to processor cores and to other low voltage circuits such as IO and memory. Dynamic voltage scaling is provided to allow controlled supply rail adjustments for the processor cores and/or other circuitry.

Depending on the system power path configuration, the six general purpose LDO regulators can be directly supplied from the main input supply or from the switching regulators to power peripherals, such as audio, camera, Bluetooth, Wireless LAN, etc. A specific VREFDDR voltage reference is included to provide accurate reference voltage for DDR memories operating with or without VTT termination. The VSNVS block behaves as an LDO, or as a bypass switch to supply the SNVS/SRTC circuitry on the i.MX processors; VSNVS may be powered from VIN, or from a coin cell.

5.3.2 Control logicThe PF0100Z PMIC is fully programmable via the I2C interface. Additional communication is provided by direct logic interfacing including interrupt and reset. Start-up sequence of the device is selected upon the initial OTP configuration explained in the Start-up section, or by configuring the “try before buy” feature to test different power up sequences before choosing the final OTP configuration.

The PF0100Z PMIC has the interfaces for the power buttons and dedicated signaling interfacing with the processor. It also ensures supply of critical internal logic and other circuits from the coin cell during brief interruptions from the main battery. A charger for the coin cell is included as well.

Logic and control

Switching Regulators

SW1A/B/C (0.3 V to 1.875 V)

Configurable 4.5 A or 2.5 A+2.0 A

Linear Regulators

SW2(0.4 V to 3.3 V, 2.0 A)

SW3A/B(0.4 V to 3.3 V)

Configurable 2.5 A or 1.25 A+1.25 A

SW4(0.4 V to 3.3 V, 1.0 A)

Boost Regulator(5.0 V to 5.15 V, 600 mA)

USB OTG Supply

VGEN1(0.8 V to 1.55 V, 100 mA)

VGEN2(0.8 V to 1.55 V, 250 mA)

VGEN3(1.8 V to 3.3 V, 100 mA)

VGEN4(1.8 V to 3.3 V, 350 mA)

VGEN5(1.8 V to 3.3 V, 100 mA)

VGEN6(1.8 V to 3.3 V, 200 mA)

Bias and references

Parallel MCU interface Regulator control

VSNVS(1.0 V to 3.0 V, 400 μA)RTC supply with coin cell

charger

PF0100Z functional internal block diagram

I2C communication and registers

Power generation

Fault detection and protection

DDR voltage reference

Current limit

Short-circuit

Internal core voltage reference

Thermal

OTP startup configuration

Sequence and timing

OTP prototyping (try before buy)

Voltage

Phasing and frequency selection

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PF0100Z

GENERAL DESCRIPTION

5.3.2.1 Interface signals

5.3.2.1.1 PWRON

PWRON is an input signal to the IC generating a turn-on event. It can be configured to detect a level, or an edge using the PWRON_CFG bit. Refer to section 6.4.2.1 Turn on events, page 30 for more details.

5.3.2.1.2 STANDBY

STANDBY is an input signal to the IC. When it is asserted, the part enters standby mode and when de-asserted, the part exits standby mode. STANDBY can be configured as active high or active low using the STANDBYINV bit. Refer to the section 6.4.1.3 Standby mode, page 28 for more details.

Note: When operating the PMIC at VIN ≤ 2.85 V and VSNVS is programmed for a 3.0 V output, a coin cell must be present to provide VSNVS, or the PMIC does not reliably enter and exit the STANDBY mode.

5.3.2.1.3 RESETBMCU

RESETBMCU is an open-drain, active low output configurable for two modes of operation. In its default mode, it is de-asserted 2.0 ms to 4.0 ms after the last regulator in the start-up sequence is enabled; refer to Figure 6 as an example. In this mode, the signal can be used to bring the processor out of reset, or as an indicator all supplies have been enabled; it is only asserted for a turn-off event.

When configured for its fault mode, RESETBMCU is de-asserted after the start-up sequence is completed only if no faults occurred during start-up. At anytime, if a fault occurs and persists for 1.8 ms typically, RESETBMCU is asserted, LOW. The PF0100Z is turned off if the fault persists for more than 100 ms typically. The PWRON signal restarts the part, though if the fault persists, the sequence described previously is repeated. To enter the fault mode, set bit OTP_PG_EN of register OTP PWRGD EN to “1”. This register, 0xE8, is located on Table 136. Extended page 1, page 106 of the register map. To test the fault mode, the bit may be set during TBB prototyping, or the mode may be permanently chosen by programming OTP fuses.

5.3.2.1.4 SDWNB

SDWNB is an open drain, active low output notifying the processor of an imminent PMIC shut down. It is asserted low for one 32 kHz clock cycle before powering down and then de-asserted in the OFF state.

5.3.2.1.5 INTB

INTB is an open-drain, active low output. It is asserted when any fault occurs, provided the fault interrupt is unmasked. INTB is de-asserted after the fault interrupt is cleared by software, which requires writing a “1” to the fault interrupt bit.

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6 Functional block requirements and behaviors

6.1 Start-up

The PF0100Z can be configured to start-up from either the internal OTP configuration, or with a hard-coded configuration built in to the device. The internal hard-coded configuration is enabled by connecting the VDDOTP pin to VCOREDIG through a 100 kΩ resistor. The OTP configuration is enabled by connecting VDDOTP to GND.

For NP devices, selecting the OTP configuration causes the PF0100Z not to start-up. However, the PF0100Z can be controlled through the I2C port for prototyping and programming. Once programmed, the NP device starts up with the customer programmed configuration.

6.1.1 Device start-up configurationTable 9 shows the default configuration, which can be accessed on all devices as described previously, as well as the pre-programmed OTP configurations.

Table 9. Start-up configuration

Registers

Default configuration

Pre-programmed OTP configuration

All devices F0 F6 F8 F9 FA

Default I2C Address 0x08 0x08 0x08 0x08 0x08 0x08

VSNVS_VOLT 3.0 V 3.0 V 3.0 V 3.0 V 3.0 V 3.0 V

SW1AB_VOLT 1.375 V 1.375 V 1.375 V 1.425 V 1.375 V 1.375 V

SW1AB_SEQ 1 1 2 1 5 5

SW1C_VOLT 1.375 V 1.375 V 1.375 V 1.425 V 1.375 V 1.375 V

SW1C_SEQ 1 2 2 2 5 5

SW2_VOLT 3.0 V 3.3 V 3.3 V 3.0 V 1.375 V 1.375 V

SW2_SEQ 2 5 4 5 5 5

SW3A_VOLT 1.5 V 1.5 V 1.35 V 1.5 V 1.350 V 1.5 V

SW3A_SEQ 3 3 3 3 6 6

SW3B_VOLT 1.5 V 1.5 V 1.35 V 1.5 V 1.350 V 1.5 V

SW3B_SEQ 3 3 3 3 6 6

SW4_VOLT 1.8 V 3.15 V 1.8 V 3.15 V 1.825 V 1.825 V

SW4_SEQ 3 6 4 - 7 7

SWBST_VOLT - 5.0 V 5.0 V - 5.0 V 5.0 V

SWBST_SEQ - 13 Off - 10 10

VREFDDR_SEQ 3 3 3 3 6 6

VGEN1_VOLT - 1.5 V 1.2 V 1.5 V 1.2 V 1.2 V

VGEN1_SEQ - 9 5 - - -

VGEN2_VOLT 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V

VGEN2_SEQ 2 10 Off - 8 8

VGEN3_VOLT - 2.5 V 2.8 V 2.5 V 1.8 V 1.8 V

VGEN3_SEQ - 11 5 - 8 8

VGEN4_VOLT 1.8 V 1.8 V 1.8 V 1.8 V 3.0 V 3.0 V

VGEN4_SEQ 3 7 4 - 4 4

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

VGEN5_VOLT 2.5 V 2.8 V 3.3 V 2.8 V 2.5 V 2.5 V

VGEN5_SEQ 3 12 5 - 8 8

VGEN6_VOLT 2.8 V 3.3 V 3.0 V 2.8 V 2.8 V 2.8 V

VGEN6_SEQ 3 8 1 6 7 7

PU CONFIG, SEQ_CLK_SPEED 1.0 ms 2.0 ms 0.5 ms 2.0 ms 0.5 ms 0.5 ms

PU CONFIG, SWDVS_CLK 6.25 mV/μs 1.5625 mV/μs 6.25 mV/μs 25 mV/16 μs 6.25 mV/μs 6.25 mV/μs

PU CONFIG, PWRON Level sensitive

SW1AB CONFIG SW1AB Single Phase, SW1C Independent Mode, 2.0 MHz SW1ABC Single Phase, 2.0 MHz

SW1C CONFIG 2.0 MHz

SW2 CONFIG 2.0 MHz

SW3A CONFIG SW3AB Single Phase, 2.0 MHz

SW3B CONFIG 2.0 MHz

SW4 CONFIG No VTT, 2.0 MHz

PG EN RESETBMCU in Default Mode

Table 9. Start-up configuration (continued)

Registers

Default configuration

Pre-programmed OTP configuration

All devices F0 F6 F8 F9 FA

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

Figure 6. Default start-up sequence

Table 10. Default start-up sequence timing

Parameter Description Min. Typ. Max. Unit Notes

tD1 Turn-on delay of VSNVS – 5.0 – ms (23)

tR1 Rise time of VSNVS – 3.0 – ms

tD2 User determined delay – 1.0 – ms

tR2 Rise time of PWRON – (24) – ms

tD3

Turn-on delay of first regulator

SEQ_CLK_SPEED[1:0] = 00 – 2.0 –

msSEQ_CLK_SPEED[1:0] = 01 – 2.5 – (25)

SEQ_CLK_SPEED[1:0] = 10 – 4.0 –

SEQ_CLK_SPEED[1:0] = 11 – 7.0 –

tR3 Rise time of regulators – 0.2 – ms (26)

*VSNVS starts from 1.0 V if LICELL is valid before VIN.

UVDETLICELL

VIN

VSNVS

PWRON

SW1A/B

SW1C

SW2

VGEN2

SW3A/B

SW4

VREFDDR

VGEN4

VGEN5

VGEN6

RESETBMCU

td1

td3

td4

td4

tr1

tr3

tr3

tr3

td5 tr4

tr2td2

1V

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6.1.2 One time programmability (OTP) OTP allows the programming of start-up configurations for a variety of applications. Before permanently programming the IC by programming fuses, a configuration may be prototyped by using the “try before buy” (TBB) feature. Further, an error correction code (ECC) algorithm is available to correct a single bit error and to detect multiple bit errors when fuses are programmed.

The following parameters which can be configured by OTP are listed.

• General: I2C slave address, PWRON pin configuration, start-up sequence and timing• Buck regulators: Output voltage, dual/single phase or independent mode configuration, switching frequency, and soft start ramp rate• Boost regulator and LDOs: Output voltage

NOTE: When prototyping or programming fuses, the user must ensure register settings are consistent with the hardware configuration. This is most important for the buck regulators, where the quantity, size, and value of the inductors depend on the configuration (single/dual phase or independent mode) and the switching frequency. Additionally, if an LDO is powered by a buck regulator, it is gated by the buck regulator in the start-up sequence.

6.1.2.1 Start-up sequence and timing

Each regulator has 5-bits allocated to program its start-up time slot from a turn on event; therefore, each can be placed from position one to thirty-one in the start-up sequence. The all zeros code indicates a regulator is not part of the start-up sequence and remains off. See Table 11. The delay between each position is equal; however, four delay options are available. See Table 12. The start-up sequence terminates at the last programmed regulator.

tD4

Delay between regulators

SEQ_CLK_SPEED[1:0] = 00 – 0.5 –

msSEQ_CLK_SPEED[1:0] = 01 – 1.0 –

SEQ_CLK_SPEED[1:0] = 10 – 2.0 –

SEQ_CLK_SPEED[1:0] = 11 – 4.0 –

tR4 Rise time of RESETBMCU – 0.2 – ms

tD5 Turn-on delay of RESETBMCU – 2.0 – ms

Notes23. Assumes LICELL voltage is valid before VIN is applied. If LICELL is not valid before VIN is applied then VSNVS turn-on delay may extend to a

maximum of 24 ms.24. Depends on the external signal driving PWRON.25. Default configuration.26. Rise time is a function of slew rate of regulators and nominal voltage selected.

Table 11. Start-up sequence

SWxx_SEQ[4:0]/VGENx_SEQ[4:0]/

VREFDDR_SEQ[4:0]Sequence

00000 Off

00001 SEQ_CLK_SPEED[1:0] * 1

00010 SEQ_CLK_SPEED[1:0] * 2

* *

* *

* *

* *

11111 SEQ_CLK_SPEED[1:0] * 31

Table 10. Default start-up sequence timing (continued)

Parameter Description Min. Typ. Max. Unit Notes

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.1.2.2 PWRON pin configuration

The PWRON pin can be configured as either a level sensitive input (PWRON_CFG = 0), or as an edge sensitive input (PWRON_CFG = 1). As a level sensitive input, an active high signal turns on the part and an active low signal turns off the part, or puts it into sleep mode. As an edge sensitive input, such as when connected to a mechanical switch, a falling edge turns on the part and if the switch is held low for greater than or equal to 4.0 seconds, the part turns off or enters sleep mode.

6.1.2.3 I2C address configuration

The I2C device address can be programmed from 0x08 to 0x0F. This allows flexibility to change the I2C address to avoid bus conflicts. Address bit, I2C_SLV_ADDR[3] in OTP_I2C_ADDR register is hard coded to “1” while the lower three LSBs of the I2C address (I2C_SLV_ADDR[2:0]) are programmable as shown in Table 14.

6.1.2.4 Soft start ramp rate

The start-up ramp rate or soft start ramp rate can be chosen from the same options as shown in 6.4.4.2.1 Dynamic voltage scaling, page 34.

Table 12. Start-up Sequence Clock Speed

SEQ_CLK_SPEED[1:0] Time (μs)

00 500

01 1000

10 2000

11 4000

Table 13. PWRON configuration

PWRON_CFG Mode

0PWRON pin HIGH = ON PWRON pin LOW = OFF or sleep mode

1PWRON pin pulled LOW momentarily = ON PWRON pin LOW for 4.0 seconds = OFF or sleep mode

Table 14. I2C address configuration

I2C_SLV_ADDR[3]hard coded

I2C_SLV_ADDR[2:0]I2C device address

(Hex)

1 000 0x08

1 001 0x09

1 010 0x0A

1 011 0x0B

1 100 0x0C

1 101 0x0D

1 110 0x0E

1 111 0x0F

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6.1.3 OTP prototypingBefore permanently programming fuses, it is possible to test the desired configuration by using the “try before buy” feature. With this feature, the configuration is loaded from the OTP registers. These registers merely serve as temporary storage for the values to be written to the fuses, for the values read from the fuses, or for the values read from the default configuration. To avoid confusion, these registers are referred to as the TBBOTP registers. The portion of the register map concerning OTP is shown in Table 136 and Table 137.

The contents of the TBBOTP registers are initialized to zero when a valid VIN is first applied. The values then loaded into the TBBOTP registers depend on the setting of the VDDOTP pin and on the value of the TBB_POR and FUSE_POR bits. Refer to Table 15.

• If VDDOTP = VCOREDIG (1.5 V), the values are loaded from the default configuration.

• If VDDOTP = 0.0 V, TBB_POR = 0 and FUSE_POR = 1, the values are loaded from the fuses. In the MMPF0100Z, FUSE_POR1, FUSE_POR2, and FUSE_POR3 are XOR’ed into the FUSE_POR_XOR bit. The FUSE_POR_XOR must be 1 for fuses to be loaded. This is achieved by setting any one or all of the FUSE_PORx bits. The XOR function is removed in the MMPF0100AZ. It is required to set all of the FUSE_PORx bits to be able to load the fuses.

• If VDDOTP = 0.0 V, TBB_POR = 0 and FUSE_POR = 0, the TBBOTP registers remain initialized at zero.

The initial value of TBB_POR is always “0”; only when VDDOTP = 0.0 V and TBB_POR is set to “1” are the values from the TBBOTP registers maintained and not loaded from a different source.

The contents of the TBBOTP registers are modified by I2C. To communicate with I2C, VIN must be valid and VDDIO, to which SDA and SCL are pulled up, must be powered by a 1.7 V to 3.6 V supply. VIN, or the coin cell voltage must be valid to maintain the contents of the registers. To power on with the contents of the TBBOTP registers, the following conditions must exist; VIN is valid, VDDOTP = 0.0 V, TBB_POR = 1, and there is a valid turn-on event. Refer to the application note AN4536 for an example of prototyping.

6.1.4 Reading OTP fusesAs described in the previous section, the contents of the fuses are loaded to the TBBOTP registers when the following conditions are met; VIN is valid, VDDOTP = 0.0 V, TBB_POR = 0 and FUSE_POR = 1. If ECC were enabled at the time the fuses were programmed, the error corrected values can be loaded into the TBBOTP registers if desired. Once the fuses are loaded and a turn-on event occurs, the PMIC powers on with the configuration programmed in the fuses. For more details on reading the OTP fuses, see application note AN4536.

6.1.5 Programming OTP fusesThe programmable parameters are shown in the TBBOTP registers in the Table 136. Extended page 1, page 106 of the register map. The PF0100AZ offers ECC, the control registers for which functions are located in Table 137. Extended page 2, page 110 of the register map. There are ten banks of twenty-six fuses each which can be programmed. For more details on programming the OTP fuses, see application note AN4536.

Table 15. Source of start-up sequence

VDDOTP(V) TBB_POR FUSE_POR Start-up sequence

0 0 0 None

0 0 1 OTP fuses

0 1 x TBBOTP registers

1.5 x x Factory defined

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.2 16 MHz and 32 kHz clocks

There are two clocks: a trimmed 16 MHz, RC oscillator and an untrimmed 32 kHz, RC oscillator. The 16 MHz oscillator is specified within -8.0%/+8.0%. The 32 kHz untrimmed clock is only used in the following conditions:

• VIN < UVDET• All regulators are in sleep mode• All regulators are in PFM switching mode

A 32 kHz clock, derived from the 16 MHz trimmed clock, is used when accurate timing is needed under the following conditions:

• During start-up, VIN > UVDET• PWRON_CFG = 1, for power button debounce timing

In addition, when the 16 MHz is active in the on mode, the debounce times in Table 26 are referenced to the 32 kHz derived from the 16 MHz clock. The exceptions are the LOWVINI and PWRONI interrupts, which are referenced to the 32 kHz untrimmed clock.

6.2.1 Clock adjustmentThe 16 MHz clock and hence the switching frequency of the regulators, can be adjusted to improve the noise integrity of the system. By changing the factory trim values of the 16 MHz clock, the user may add an offset as small as ±3% of the nominal frequency. Contact your NXP representative for detailed information on this feature.

6.3 Bias and references block description

6.3.1 Internal core voltage referencesAll regulators use the main bandgap as the reference. The main bandgap is bypassed with a capacitor at VCOREREF. The bandgap and the rest of the core circuitry are supplied from VCORE. The performance of the regulators is directly dependent on the performance of the bandgap. No external DC loading is allowed on VCORE, VCOREDIG, or VCOREREF. VCOREDIG is kept powered as long as there is a valid supply and/or valid coin cell. Table 17 shows the main characteristics of the core circuitry.

Table 16. 16 MHz clock specifications

PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 2.8 V to 4.5 V, LICELL = 1.8 V to 3.3 V and typical external component values. Typical values are characterized at VIN = 3.6 V, LICELL = 3.0 V, and 25 °C, unless otherwise noted.

Symbol Parameters Min. Typ. Max. Units Notes

VIN16MHz Operating voltage From VIN 2.8 – 4.5 V

f16MHZ 16 MHz clock frequency 14.7 16 17.2 MHz

f2MHZ 2.0 MHz clock frequency 1.84 – 2.15 MHz (27)

Notes27. The 2.0 MHz clock is derived from the 16 MHz clock.

Table 17. Core voltages electrical specifications(29)

PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 2.8 V to 4.5 V, LICELL = 1.8 V to 3.3 V, and typical external component values. Typical values are characterized at VIN = 3.6 V, LICELL = 3.0 V, and 25 °C, unless otherwise noted.

Symbol Parameters Min. Typ. Max. Units Notes

VCOREDIG (digital core supply)

VCOREDIG

Output voltageOn mode (28)

Coin cell mode and off––

1.51.3

––

V

VCORE (analog core supply)

VCORE

Output voltageOn mode and charging (28)

Off and Coin cell mode––

2.7750.0

––

V

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6.3.1.1 External components

6.3.2 VREFDDR voltage referenceVREFDDR is an internal PMOS half supply voltage follower capable of supplying up to 10 mA. The output voltage is at one half the input voltage. Its typically used as the reference voltage for DDR memories. A filtered resistor divider is utilized to create a low frequency pole. This divider uses a voltage follower to drive the load.

Figure 7. VREFDDR block diagram

6.3.2.1 VREFDDR control register

The VREFDDR voltage reference is controlled by a single bit in VREFDDCRTL register in Table 19.

VCOREREF (bandgap / regulator reference)

VCOREREF Output voltage (28) – 1.2 – V

VCOREREFACC Absolute accuracy – 0.5 – %

VCOREREFTACC Temperature drift – 0.25 – %

Notes28. 3.0 V < VIN < 4.5 V, no external loading on VCOREDIG, VCORE, or VCOREREF. Extended operation down to UVDET, but no system malfunction.

29. For information only

Table 18. External components for core voltages

Regulator Capacitor value (μF)

VCOREDIG 1.0

VCORE 1.0

VCOREREF 0.22

Table 17. Core voltages electrical specifications(29) (continued)

PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 2.8 V to 4.5 V, LICELL = 1.8 V to 3.3 V, and typical external component values. Typical values are characterized at VIN = 3.6 V, LICELL = 3.0 V, and 25 °C, unless otherwise noted.

Symbol Parameters Min. Typ. Max. Units Notes

VINREFDDR

VREFDDR

VINREFDDR

CHALF1

Discharge+

_VHALF

VREFDDR

CHALF2

100 nf

100 nf

CREFDDR

1.0 uf

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6.3.2.1.1 External components

6.3.2.1.2 VREFDDR specifications

Table 19. Register VREFDDCRTL - ADDR 0x6A

Name Bit # R/W Default Description

UNUSED 3:0 – 0x00 unused

VREFDDREN 4 R/W 0x00Enable or disables VREFDDR output voltage

0 = VREFDDR disabled1 = VREFDDR enabled

UNUSED 7:5 – 0x00 unused

Table 20. VREFDDR external components (30)

Capacitor Capacitance (μF)

VINREFDDR(31) to VHALF 0.1

VHALF to GND 0.1

VREFDDR 1.0

Notes30. Use X5R or X7R capacitors.31. VINREFDDR to GND, 1.0 μF minimum capacitance is provided by buck regulator output.

Table 21. VREFDDR electrical characteristics

PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, IREFDDR = 0.0 mA, VINREFDDR = 1.5 V and typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, IREFDDR = 0.0 mA, VINREFDDR = 1.5 V, and 25 °C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

VREFDDR

VINREFDDR Operating input voltage range 1.2 – 1.8 V

IREFDDR Operating load current range 0.0 – 10 mA

IREFDDRLIMCurrent limit

IREFDDR when VREFDDR is forced to VINREFDDR/410.5 15 25 mA

IREFDDRQ Quiescent current – 8.0 – μA (32)

Active Mode – DC

VREFDDR

Output voltage1.2 V < VINREFDDR < 1.8 V 0.0 mA < IREFDDR < 10 mA

–VINREFDDR/

2– V

VREFDDRTOL

Output voltage tolerance1.2 V < VINREFDDR < 1.8 V0.6 mA ≤ IREFDDR ≤ 10 mATA = -40 °C to 85 °CTA = -40 °C to 105 °C (PF0100AZ only)

–1.0-1.2

––

1.01.2

%

VREFDDRLOR

Load regulation1.0 mA < IREFDDR < 10 mA 1.2 V < VINREFDDR < 1.8 V

– 0.40 – mV/mA

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

Active mode – AC

tONREFDDR

Turn-on TimeEnable to 90% of end valueVINREFDDR = 1.2 V, 1.8 VIREFDDR = 0.0 mA

– – 100 μs

tOFFREFDDR

Turn-off timeDisable to 10% of initial valueVINREFDDR = 1.2 V, 1.8 VIREFDDR = 0.0 mA

– – 10 ms

VREFDDROSH

Start-up overshootVINREFDDR = 1.2 V, 1.8 VIREFDDR = 0.0 mA

– 1.0 6.0 %

VREFDDRTLRTransient load response

VINREFDDR = 1.2 V, 1.8 V– 5.0 – mV

Notes32. When VREFDDR is off there is a quiescent current of 1.5 μA typical.

Table 21. VREFDDR electrical characteristics (continued)

PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, IREFDDR = 0.0 mA, VINREFDDR = 1.5 V and typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, IREFDDR = 0.0 mA, VINREFDDR = 1.5 V, and 25 °C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

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NXP Semiconductors 27

PF0100Z

FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4 Power generation

6.4.1 Modes of operationThe operation of the PF0100Z can be reduced to five states, or modes: on, off, sleep, standby, and coin cell. Figure 8 shows the state diagram of the PF0100Z, along with the conditions to enter and exit from each state.

Figure 8. State diagram

To complement the state diagram in Figure 8, a description of the states is provided in following sections. Note that VIN must exceed the rising UVDET threshold to allow a power up. Refer to Table 28 for the UVDET thresholds. Additionally, I2C control is not possible in the coin cell mode and the interrupt signal, INTB, is only active in sleep, standby, and on states.

6.4.1.1 On mode

The PF0100Z enters the on mode after a turn-on event. RESETBMCU is de-asserted, high, in this mode of operation.

6.4.1.2 Off mode

The PF0100Z enters the off mode after a turn-off event. A thermal shutdown event also forces the PF0100Z into the off mode. Only VCOREDIG and VSNVS are powered in the mode of operation. To exit the off mode, a valid turn-on event is required. RESETBMCU is asserted, low, in this mode.

PWRON = 0 held >= 4.0 secAny SWxOMODE bits=1& PWRONRSTEN = 1

(PWRON_CFG=1)

PWRON=1& VIN > UVDET

(PWRON_CFG =0)Or

PWRON= 0 < 4.0 sec& VIN > UVDET

(PWRON_CFG=1)

ON

PWRON = 0Any SWxOMODE bits=1

(PWRON_CFG=0)Or

PWRON=0 held >= 4.0 secAny SWxOMODE bits=1& PWRONRSTEN = 1

(PWRON_CFG=1)

PWRON=1& VIN > UVDET

(PWRON_CFG = 0)Or

PWRON= 0 < 4.0 sec& VIN > UVDET

(PWRON_CFG=1)

PWRON = 0All SWxOMODE bits= 0

(PWRON_CFG = 0)Or

PWRON = 0 held >= 4.0 secAll SWxOMODE bits= 0& PWRONRSTEN = 1(PWRON_CFG = 1)

OFF

Sleep

Coin Cell

VIN < UVDET

VIN > UVDET

Thermal shudown

Standby

STANDBY asserted

VIN < UVDET

Thermal shutdown

Thermal shutdown

STANDBY de-asserted

PWRON = 0Any SWxOMODE bits=1

(PWRON_CFG=0)Or

PWRON=0 held >= 4.0 secAny SWxOMODE bits=1& PWRONRSTEN = 1

(PWRON_CFG=1)

PWRON = 0All SWxOMODE bits= 0

(PWRON_CFG = 0)Or

PWRON = 0 held >= 4.0 secAll SWxOMODE bits= 0& PWRONRSTEN = 1(PWRON_CFG = 1)

VIN < UVDET

VIN < UVDET

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.1.3 Standby mode

• Depending on STANDBY pin configuration, standby is entered when the STANDBY pin is asserted. This is typically used for low-power mode of operation.

• When STANDBY is de-asserted, standby mode is exited.

A product may be designed to go into a low-power mode after periods of inactivity. The STANDBY pin is provided for board level control of going in and out of such deep sleep modes (DSM).

When a product is in DSM, it may be able to reduce the overall platform current by lowering the regulator output voltage, changing the operating mode of the regulators, or disabling some regulators. The configuration of the regulators in standby is pre-programmed through the I2C interface.

Note that the STANDBY pin is programmable for active high or active low polarity, and decoding of a Standby event takes into account the programmed input polarity, as shown in Table 22. When the PF0100Z is powered up first, regulator settings for the standby mode are mirrored from the regulator settings for the on mode. To change the STANDBY pin polarity to active low, set the STANDBYINV bit via software first, and then change the regulator settings for standby mode as required. For simplicity, STANDBY is generally referred to as active high throughout this document.

Since STANDBY pin activity is driven asynchronously to the system, a finite time is required for the internal logic to qualify and respond to the pin level changes. A programmable delay is provided to hold off the system response to a Standby event. This allows the processor and peripherals some time after a standby instruction was received to terminate processes to facilitate seamless entering into standby mode.

When enabled (STBYDLY = 01, 10, or 11) per Table 23, STBYDLY delays the standby initiated response for the entire IC, until the STBYDLY counter expires. An allowance should be made for three additional 32 k cycles required to synchronize the standby event.

6.4.1.4 Sleep mode

• Depending on the PWRON pin configuration, sleep mode is entered when PWRON is de-asserted and SWxOMODE bit is set.

• To exit sleep mode, assert the PWRON pin.

In the sleep mode, the regulator uses the set point as programmed by SW1xOFF[5:0] for SW1A/B/C and by SWxOFF[6:0] for SW2, SW3A/B, and SW4. The activated regulators maintain settings for this mode and voltage until the next turn-on event. Table 24 shows the control bits in sleep mode. During sleep mode, interrupts are active and the INTB pin reports any unmasked fault event.

Table 22. Standby pin and polarity control

STANDBY (pin)(34) STANDBYINV (I2C bit)(35) STANDBY control (33)

0 0 0

0 1 1

1 0 1

1 1 0

Notes33. STANDBY = 0: System is not in standby, STANDBY = 1: System is in standby34. The state of the STANDBY pin only has influence in on mode.35. Bit 6 in power control register (ADDR - 0x1B)

Table 23. STANDBY delay - initiated response

STBYDLY[1:0](36) Function

00 No delay

01 One 32 k period (default)

10 Two 32 k periods

11 Three 32 k periods

Notes36. Bits [5:4] in Power Control Register (ADDR - 0x1B)

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.1.5 Coin cell mode

In the coin cell state, the coin cell is the only valid power source (VIN = 0.0 V) to the PMIC. No turn-on event is accepted in the coin cell state. Transition to the OFF state requires that VIN surpasses UVDET threshold. RESETBMCU is held low in this mode.

If the coin cell is depleted, a complete system reset occurs. At the next application of power and the detection of a turn-on event, the system is re-initialized with all I2C bits including those reset on COINPORB, which are restored to their default states.

6.4.2 State machine flow summaryTable 25 provides a summary matrix of the PF0100Z flow diagram to show the conditions needed to transition from one state to another.

Table 24. Regulator mode control

SWxOMODE Off operational mode (sleep) (37)

0 Off

1 PFM

Notes37. For sleep mode, an activated switching regulator, should use the off mode

set point as programmed by SW1xOFF[5:0] for SW1A/B/C and SWxOFF[6:0] for SW2, SW3A/B, and SW4.

Table 25. State machine flow summary

STATENext state

OFF Coin cell Sleep Standby ON

Init

ial

stat

e

OFF X VIN < UVDET X X

PWRON_CFG = 0PWRON = 1 & VIN > UVDET

orPWRON_CFG = 1

PWRON = 0 < 4.0 s& VIN > UNDET

Coin cell VIN > UVDET X X X X

Sleep

Thermal Shutdown

VIN < UVDET X X

PWRON_CFG = 0PWRON = 1 & VIN > UVDET

orPWRON_CFG = 1

PWRON = 0 < 4.0 s & VIN > UNDET

PWRON_CFG = 1PWRON = 0 ≥ 4.0 s

Any SWxOMODE = 1 & PWRONRSTEN = 1

Standby

Thermal Shutdown

VIN < UVDET

PWRON_CFG = 0PWRON = 0

Any SWxOMODE = 1or

PWRON_CFG = 1PWRON = 0 ≥ 4.0 s

Any SWxOMODE = 1 & PWRONRSTEN = 1

X Standby de-asserted

PWRON_CFG = 0PWRON = 0

All SWxOMODE = 0or

PWRON_CFG = 1PWRON = 0 ≥ 4.0 s

All SWxOMODE = 0 & PWRONRSTEN = 1

ON

Thermal Shutdown

VIN < UVDET

PWRON_CFG = 0PWRON = 0

Any SWxOMODE = 1or

PWRON_CFG = 1PWRON = 0 ≥ 4.0 s

Any SWxOMODE = 1 & PWRONRSTEN = 1

Standby asserted

X

PWRON_CFG = 0PWRON = 0

All SWxOMODE = 0or

PWRON_CFG = 1PWRON = 0 ≥ 4.0 s

All SWxOMODE = 0 & PWRONRSTEN = 1

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30 NXP Semiconductors

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.2.1 Turn on events

From off and sleep modes, the PMIC is powered on by a turn-on event. The type of turn-on event depends on the configuration of PWRON. PWRON may be configured as an active high when PWRON_CFG = 0, or as the input of a mechanical switch when PWRON_CFG = 1. VIN must be greater than UVDET for the PMIC to turn-on. When PWRON is configured as an active high and PWRON is high (pulled up to VSNVS) before VIN is valid, a VIN transition from 0.0 V to a voltage greater than UVDET is also a turn-on event. See the state diagram, Figure 8, and the Table 25 for more details. Any regulator enabled in the sleep mode remains enabled when transitioning from sleep to on, the regulator does not turn off and then on again to match the start-up sequence. The following is a more detailed description of the PWRON configurations:

• If PWRON_CFG = 0, the PWRON signal is high and VIN > UVDET, the PMIC turns on; the interrupt and sense bits, PWRONI and PWRONS respectively, are set.

• If PWRON_CFG = 1, VIN > UVDET and PWRON transitions from high to low, the PMIC turns on; the interrupt and sense bits, PWRONI and PWRONS respectively, are set.

The sense bit shows the real time status of the PWRON pin. In this configuration, the PWRON input can be a mechanical switch debounced through a programmable debouncer, PWRONDBNC[1:0], to avoid a response to a very short (unintentional) key press. The interrupt is generated for both the falling and the rising edge of the PWRON pin. By default, a 30 ms interrupt debounce is applied to both falling and rising edges. The falling edge debounce timing can be extended with PWRONDBNC[1:0] as defined in Table 26. The interrupt is cleared by software, or when cycling through the off mode.

6.4.2.2 Turn off events

6.4.2.2.1 PWRON pin

The PWRON pin is used to power off the PF0100Z. The PWRON pin can be configured with OTP to power off the PMIC under the following two conditions:

1. PWRON_CFG bit = 0, SWxOMODE bit = 0 and PWRON pin is low.

2. PWRON_CFG bit = 1, SWxOMODE bit = 0, PWRONRSTEN = 1 and PWRON is held low for longer than 4.0 seconds. Alternatively, the system can be configured to restart automatically by setting the RESTARTEN bit.

6.4.2.2.2 Thermal protection

If the die temperature surpasses a given threshold, the thermal protection circuit powers off the PMIC to avoid damage. A turn-on event does not power on the PMIC while it is in thermal protection. The part remains in off mode until the die temperature decreases below a given threshold. There are no specific interrupts related to this other than the warning interrupt. See 4.2.1 Power dissipation, page 10 for more detailed information.

6.4.2.2.3 Undervoltage detection

When the voltage at VIN drops below the undervoltage falling threshold, UVDET, the state machine transitions to the coin cell mode.

Table 26. PWRON hardware debounce bit settings

Bits StateTurn on

debounce (ms)Falling edge INTdebounce (ms)

Rising edge INTdebounce (ms)

PWRONDBNC[1:0]

00 0.0 31.25 31.25

01 31.25 31.25 31.25

10 125 125 31.25

11 750 750 31.25

Notes38. The sense bit, PWRONS, is not debounced and follows the state of the PWRON pin.

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NXP Semiconductors 31

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.3 Power treeThe PF0100Z PMIC features six buck regulators, one boost regulator, six general purpose LDOs, one switch/LDO combination, and a DDR voltage reference to supply voltages for the application processor and peripheral devices. The buck regulators as well as the boost regulator are supplied directly from the main input supply (VIN). The inputs to all of the buck regulators must be tied to VIN, whether they are powered on or off. The six general use LDO regulators are directly supplied from the main input supply or from the switching regulators depending on the application requirements. Since VREFDDR is intended to provide DDR memory reference voltage, it should be supplied by any rail supplying voltage to DDR memories; the typical application recommends the use of SW3 as the input supply for VREFDDR. VSNVS is supplied by either the main input supply or the coin cell. Refer to Table 27 for a summary of all power supplies provided by the PF0100Z.

Figure 9 shows a simplified power map with various recommended options to supply the different block within the PF0100Z, as well as the typical application voltage domain on the i.MX 6X processor. Note that each application power tree is dependent upon the system’s voltage and current requirements, therefore a proper input voltage should be selected for the regulators.

The minimum operating voltage for the main VIN supply is 2.8 V, for lower voltages proper operation is not guaranteed. However at initial power up, the input voltage must surpass the rising UVDET threshold before proper operation is guaranteed. Refer to the representative tables and text specifying each supply for information on performance metrics and operating ranges. Table 28 summarizes the UVDET thresholds.

Table 27. Power tree summary

Supply Output voltage (V) Step size (mV) Maximum load current (mA)

SW1A/B 0.3 - 1.875 25 2500

SW1C 0.3 - 1.875 25 2000

SW2 0.4 - 3.3 25/50 2000 (40)

SW3A/B 0.4 - 3.3 25/50 1250 (39)

SW4 0.5*SW3A_OUT, 0.4 - 3.3 25/50 1000

SWBST 5.00/5.05/5.10/5.15 50 600

VGEN1 0.80 – 1.55 50 100

VGEN2 0.80 – 1.55 50 250

VGEN3 1.8 – 3.3 100 100

VGEN4 1.8 – 3.3 100 350

VGEN5 1.8 – 3.3 100 100

VGEN6 1.8 – 3.3 100 200

VSNVS 1.0 - 3.0 NA 0.4

VREFDDR 0.5*SW3A_OUT NA 10

Notes39. Current rating per independent phase, when SW3A/B is set in single or dual phase, current capability is up to 2500 mA.40. SW2 capable of 2500 mA in NP/F9/FA versions

Table 28. UVDET threshold

UVDET threshold VIN

Rising 3.1 V

Falling 2.65 V

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

Figure 9. PF0100Z typical power map

SW2VDDHIGH

(0.4 to 3.3 V), 2.0 A

VDDARM_IN

VDDSOC_IN

VDDHIGH_IN

VDD_DDR_IO

i.MX6X MCU

LDO_3p0SWBST

5.0 V, 0.6 A

SW3BDDR IO

(0.4 to 3.3 V), 1.25 A

SW3ADDR CORE

(0.4 to 3.3 V), 1.25 A

SW1CSOC

(0.3 to 1.875 V), 2.0 A

SW1BCORE

(0.3 to 1.875 V), 1.25 A

SW1ACORE

(0.3 to 1.875 V), 1.25 A

USB_OTG

Peripherals

VGEN1(0.80 to 1.55 V),

100 mA

VGEN2(0.80 to 1.55 V),

250 mA

VGEN3(1.8 to 3.3 V),

100 mA

VSNVS_IN

VGEN4(1.8 to 3.3 V),

350 mA

VGEN5(1.8 to 3.3 V),

100 mA

VGEN6(1.8 to 3.3 V),

200 mA

DDR3

SW4System/VTT(0.4 to 3.3 V) (0.5*VDDR)

1.0 A

VREFDDR0.5*VDDR, 10 mA

Coincell

VIN

SW3A/B

VIN

SW2

SW4

VINMAX = 3.4 V

VIN2.8 - 4.5 V

VINMAX = 3.6 V

VSNVS1.0 to 3.0 V,

400 uA

MUX / COIN CHRG

VINMAX = 4.5 V

VIN

SW2

SW4

VIN

SW2

SW4

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NXP Semiconductors 33

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.4 Buck regulatorsEach buck regulator is capable of operating in PFM, APS, and PWM switching modes.

6.4.4.1 Current limit

Each buck regulator has a programmable current limit. In an overcurrent condition, the current is limited cycle-by-cycle. If the current limit condition persists for more than 8.0 ms, a fault interrupt is generated.

6.4.4.2 General control

To improve system efficiency the buck regulators can operate in different switching modes. Changing between switching modes can occur by any of the following means: I2C programming, exiting/entering the standby mode, exiting/entering sleep mode, and load current variation. Available switching modes for buck regulators are presented in Table 29.

During soft-start of the buck regulators, the controller transitions through the PFM, APS, and PWM switching modes. 3.0 ms (typical) after the output voltage reaches regulation, the controller transitions to the selected switching mode. Depending on the particular switching mode selected, additional ripple may be observed on the output voltage rail as the controller transitions between switching modes. Contact your NXP representative for application considerations if you are using load switches in series with the buck regulator outputs. Table 30summarizes the buck regulator programmability for normal and standby modes.

Transitioning between normal and standby modes can affect a change in switching modes as well as output voltage. The rate of the output voltage change is controlled by the dynamic voltage scaling (DVS), explained in 6.4.4.2.1 Dynamic voltage scaling, page 34. For each regulator, the output voltage options are the same for normal and standby modes.

Table 29. Switching mode description

Mode Description

OFF The regulator is switched off and the output voltage is discharged.

PFM In this mode, the regulator is always in PFM mode, which is useful at light loads for optimized efficiency.

PWM In this mode, the regulator is always in PWM mode operation regardless of load conditions.

APS In this mode, the regulator moves automatically between pulse skipping mode and PWM mode depending on load conditions.

Table 30. Regulator mode control

SWxMODE[3:0] Normal mode Standby mode

0000 Off Off

0001 PWM Off

0010 Reserved Reserved

0011 PFM Off

0100 APS Off

0101 PWM PWM

0110 PWM APS

0111 Reserved Reserved

1000 APS APS

1001 Reserved Reserved

1010 Reserved Reserved

1011 Reserved Reserved

1100 APS PFM

1101 PWM PFM

1110 Reserved Reserved

1111 Reserved Reserved

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

When in standby mode, the regulator outputs the voltage programmed in its standby voltage register and operates in the mode selected by the SWxMODE[3:0] bits. Upon exiting standby mode, the regulator returns to its normal switching mode and its output voltage programmed in its voltage register.

Any regulators whose SWxOMODE bit is set to “1” enters sleep mode if a PWRON turn-off event occurs, and any regulator whose SWxOMODE bit is set to “0” is turned off. In sleep mode, the regulator outputs the voltage programmed in its off (sleep) voltage register and operates in the PFM mode. The regulator exits the sleep mode when a turn-on event occurs. Any regulator whose SWxOMODE bit is set to “1” remains on and changes to its normal configuration settings when exiting the sleep state to the on state. Any regulator whose SWxOMODE bit is set to “0” powers up with the same delay in the start-up sequence as when powering on from off. At this point, the regulator returns to its default ON state output voltage and switch mode settings.

Table 24 shows the control bits in sleep mode. When sleep mode is activated by the SWxOMODE bit, the regulator uses the set point as programmed by SW1xOFF[5:0] for SW1A/B/C and by SWxOFF[6:0] for SW2, SW3A/B, and SW4.

6.4.4.2.1 Dynamic voltage scaling

To reduce overall power consumption, processor core voltages can be varied depending on the mode or activity level of the processor.

1. Normal operation: The output voltage is selected by I2C bits SW1x[5:0] for SW1A/B/C and SWx[6:0] for SW2, SW3A/B, and SW4.

A voltage transition initiated by I2C is governed by the DVS stepping rates shown in Table 33 and Table 34.

2. Standby mode: The output voltage can be higher, or lower than in normal operation, but is typically selected to be the lowest state

retention voltage of a given processor; it is selected by I2C bits SW1xSTBY[5:0] for SW1A/B/C and by bits SWxSTBY[6:0] for SW2, SW3A/B, and SW4. Voltage transitions initiated by a standby event are governed by the SW1xDVSSPEED[1:0] and

SWxDVSSPEED[1:0] I2C bits shown in Table 33 and Table 34, respectively.

3. Sleep mode: The output voltage can be higher or lower than in normal operation, but is typically selected to be the lowest state

retention voltage of a given processor; it is selected by I2C bits SW1xOFF[5:0] for SW1A/B/C and by bits SWxOFF[6:0] for SW2, SW3A/B, and SW4. Voltage transitions initiated by a turn-off event are governed by the SW1xDVSSPEED[1:0] and

SWxDVSSPEED[1:0] I2C bits shown in Table 33 and Table 34, respectively.

Table 31, Table 32, Table 33, and Table 34 summarize the set point control and DVS time stepping applied to all regulators.

Table 31. DVS control logic for SW1A/B/C

STANDBY Set point selected by

0 SW1x[5:0]

1 SW1xSTBY[5:0]

Table 32. DVS control logic for SW2, SW3A/B, and SW4

STANDBY Set point selected by

0 SWx[6:0]

1 SWxSTBY[6:0]

Table 33. DVS speed selection for SW1A/B/C

SW1xDVSSPEED[1:0] Function

00 25 mV step each 2.0 μs

01 (default) 25 mV step each 4.0 μs

10 25 mV step each 8.0 μs

11 25 mV step each 16 μs

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

The regulators have a strong sourcing capability and sinking capability in PWM mode, therefore the fastest rising and falling slopes are determined by the regulator in PWM mode. However, if the regulators are programmed in PFM or APS mode during a DVS transition, the falling slope can be influenced by the load. Additionally, as the current capability in PFM mode is reduced, controlled DVS transitions in PFM mode could be affected. Critically timed DVS transitions are best assured with PWM mode operation.

The following diagram shows the general behavior for the regulators when initiated with I2C programming, or standby control. During the DVS period the overcurrent condition on the regulator should be masked.

Figure 10. Voltage stepping with DVS

6.4.4.2.2 Regulator phase clock

The SWxPHASE[1:0] bits select the phase of the regulator clock as shown in Table 35. By default, each regulator is initialized at 90 ° out of phase with respect to each other. For example, SW1x is set to 0 °, SW2 is set to 90 °, SW3A/B is set to 180 °, and SW4 is set to 270 ° by default at power up.

The SWxFREQ[1:0] register is used to set the desired switching frequency for each one of the buck regulators. Table 37 shows the selectable options for SWxFREQ[1:0]. For each frequency, all phases will be available, this allows regulators operating at different frequencies to have different relative switching phases. However, not all combinations are practical. For example, 2.0 MHz, 90 ° and 4.0 MHz, 180 ° are the same in terms of phasing. Table 36 shows the optimum phasing when using more than one switching frequency.

Table 34. DVS Speed Selection for SW2, SW3A/B, and SW4

SWxDVSSPEED[1:0]Function

SWx[6] = 0 or SWxSTBY[6] = 0Function

SWx[6] = 1 or SWxSTBY[6] = 1

00 25 mV step each 2.0 μs 50 mV step each 4.0 μs

01 (default) 25 mV step each 4.0 μs 50 mV step each 8.0 μs

10 25 mV step each 8.0 μs 50 mV step each 16 μs

11 25 mV step each 16 μs 50 mV step each 32 μs

Table 35. Regulator phase clock selection

SWxPHASE[1:0]Phase of clock sent to regulator

(degrees)

00 0

01 90

10 180

11 270

ActualOutput Voltage

ExampleActual Output Voltage

PossibleOutput Voltage Window

Internally

Controlled Steps

Output Voltage with light Load

Initial Set Point

VoltageChange Request

Internally Controlled Steps

Output Voltage

RequestedSet Point

Initiated by I2C Programming, Standby Control

Request forHigher Voltage

Request forLower Voltage

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6.4.4.2.3 Programmable maximum current

The maximum current, ISWxMAX, of each buck regulator is programmable. This allows the use of smaller inductors where lower currents are required. Programmability is accomplished by choosing the number of paralleled power stages in each regulator. The SWx_PWRSTG[2:0] bits in Table 137. Extended page 2, page 110 of the register map control the number of power stages. See Table 38for the programmable options. Bit[0] must always be enabled to ensure the stage with the current sensor is chosen. The default setting, SWx_PWRSTG[2:0] = 111, represents the highest maximum current. The current limit for each option is also scaled by the percentage of power stages that are enabled.

Table 36. Optimum phasing

Frequencies Optimum phasing

1.0 MHz2.0 MHz

0 °180 °

1.0 MHz4.0 MHz

0 °180 °

2.0 MHz4.0 MHz

0 °180 °

1.0 MHz2.0 MHz4.0 MHz

0 °90 °90 °

Table 37. Regulator frequency configuration

SWxFREQ[1:0] Frequency

00 1.0 MHz

01 2.0 MHz

10 4.0 MHz

11 Reserved

Table 38. Programmable current configuration

Regulators Control bits% of power stages

enabledRated current (A)

SW1AB

SW1AB_PWRSTG[2:0] ISW1ABMAX

0 0 1 40% 1.0

0 1 1 80% 2.0

1 0 1 60% 1.5

1 1 1 100% 2.5

SW1C

SW1C_PWRSTG[2:0] ISW1CMAX

0 0 1 43% 0.9

0 1 1 58% 1.2

1 0 1 86% 1.7

1 1 1 100% 2.0

SW2

SW2_PWRSTG[2:0] ISW2MAX

0 0 1 38% 0.75

0 1 1 75% 1.5

1 0 1 63% 1.25

1 1 1 100% 2.0

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NXP Semiconductors 37

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.4.3 SW1A/B/C

SW1/A/B/C are 2.5 A to 4.5 A buck regulators which can be configured in various phasing schemes, depending on the desired cost/performance trade-offs. The following configurations are available:

• SW1A/B/C single phase with one inductor

• SW1A/B as a single phase with one inductor and SW1C in independent mode with one inductor

• SW1A/B as a dual phase with two inductors and SW1C in independent mode with one inductor

The desired configuration is programmed by OTP by using SW1_CONFIG[1:0] bits in the register map Table 136. Extended page 1, page 106, as shown in Table 39. .

6.4.4.3.1 SW1A/B/C single phase

In this configuration, all phases A, B, and C, are connected together to a single inductor, thus, providing up to 4.50 A current capability for high current applications. The feedback and all other controls are accomplished by use of pin SW1CFB and SW1C control registers, respectively. Figure 11 shows the connection for SW1A/B/C in single phase mode.

During single phase mode operation, all three phases use the same configuration for frequency, phase, and DVS speed set in the SW1CCONF register. However, the same configuration settings for frequency, phase, and DVS speed setting on SW1AB registers should be used. The SW1FB pin should be left floating in this configuration.

SW3A

SW3A_PWRSTG[2:0] ISW3AMAX

0 0 1 40% 0.5

0 1 1 80% 1.0

1 0 1 60% 0.75

1 1 1 100% 1.25

SW3B

SW3B_PWRSTG[2:0] ISW3BMAX

0 0 1 40% 0.5

0 1 1 80% 1.0

1 0 1 60% 0.75

1 1 1 100% 1.25

SW4

SW4_PWRSTG[2:0] ISW4MAX

0 0 1 50% 0.5

0 1 1 75% 0.75

1 0 1 75% 0.75

1 1 1 100% 1.0

Table 39. SW1 configuration

SW1_CONFIG[1:0] Description

00 A/B/C single phase

01A/B single phase C independent mode

10A/B dual phase C independent mode

11 Reserved

Table 38. Programmable current configuration (continued)

Regulators Control bits% of power stages

enabledRated current (A)

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Figure 11. SW1A/B/C single phase block diagram

6.4.4.3.2 SW1A/B single phase - SW1C independent mode

In this configuration, SW1A/B is connected as a single phase with a single inductor, while SW1C is used as an independent output, using its own inductor and configurations parameters. This configuration allows reduced component count by using only one inductor for SW1A/B. As mentioned before, SW1A/B and SW1C operate independently from one another, thus, they can be operated with a different voltage set point for normal, standby, and sleep modes, as well as switching mode selection and on/off control. Figure 12 shows the physical connection for SW1A/B in single phase and SW1C as an independent output.

Driver

Controller

SW1AIN

SW1ALX

SW1FB

ISENSE

COSW1A

CINSW1A

LSW1

I2CInterface

SW1A/B/C

SW1AMODE

SW1AFAULT

VIN

Driver

Controller

SW1BIN

SW1BLX

ISENSE

CINSW1B

SW1BMODE

SW1BFAULT

VIN

EAZ1

Z2

InternalCompensation

VREFDAC

I2C

Driver

Controller

EAZ1

Z2

InternalCompensation

SW1CIN

SW1CLX

SW1CFB

ISENSECINSW1C

EP

SW1CMODE

SW1CFAULT

VREF

DAC

I2C

VIN

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NXP Semiconductors 39

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

Figure 12. SW1A/B single phase, SW1C independent mode block diagram

Both SW1ALX and SW1BLX nodes operate at the same DVS, frequency, and phase configured by the SW1ABCONF register, while SW1CLX node operates independently, using the configuration in the SW1CCONF register.

6.4.4.3.3 SW1A/B dual phase - SW1C independent mode

In this mode, SW1A/B is connected in dual phase mode using one inductor per switching node, while SW1C is used as an independent output using its own inductor and configuration parameters. This mode provides a smaller output voltage ripple on the SW1A/B output. As mentioned before, SW1A/B and SW1C operate independently from one another, thus, they can be operated with a different voltage set point for normal, standby, and sleep modes, as well as switching mode selection and on/off control. Figure 13 shows the physical connection for SW1A/B in dual phase and SW1C as an independent output.

Driver

Controller

SW1AIN

SW1ALX

SW1FB

ISENSE

COSW1A

CINSW1A

LSW1A

I2CInterface

SW1A/B

SW1AMODE

SW1AFAULT

VIN

Driver

Controller

SW1BIN

SW1BLX

ISENSE

CINSW1B

SW1BMODE

SW1BFAULT

VIN

EAZ1

Z2

InternalCompensation

VREFDAC

I2C

Driver

Controller

EAZ1

Z2

InternalCompensation

SW1CIN

SW1CLX

SW1CFB

ISENSE

COSW1C

CINSW1C

LSW1C

EP

SW1C

SW1CMODE

SW1CFAULT

VREF

DAC

I2C

VIN

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

Figure 13. SW1A/B dual phase, SW1C independent mode block diagram

In this mode of operation, SW1ALX and SW1BLX nodes operate automatically at 180 ° phase shift from each other and use the same frequency and DVS configured by SW1ABCONF register, while SW1CLX node operate independently using the configuration in the SW1CCONF register.

VIN

Driver

Controller

EAZ1

Z2

InternalCompensation

SW1AIN

SW1ALX

SW1FB

ISENSE

COSW1A

CINSW1A

LSW1A

I2CInterface

SW1AB

SW1AMODE

SW1AFAULT

VREFDAC

I2C

Driver

Controller

SW1BIN

SW1BLX

ISENSE

COSW1B

CINSW1B

LSW1B

SW1BMODE

SW1BFAULT

VIN

Driver

Controller

EAZ1

Z2

InternalCompensation

SW1CIN

SW1CLX

SW1CFB

ISENSE

COSW1C

CINSW1C

LSW1C

EP

SW1C

SW1CMODE

SW1CFAULT

VREF

DAC

I2C

VIN

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.4.3.4 SW1A/B/C setup and control registers

SW1A/B and SW1C output voltages are programmable from 0.300 V to 1.875 V in steps of 25 mV. The output voltage set point is independently programmed for normal, standby, and sleep mode by setting the SW1x[5:0], SW1xSTBY[5:0], and SW1xOFF[5:0] bits respectively. Table 40 shows the output voltage coding for SW1A/B or SW1C.

Note: Voltage set points of 0.6 V and below are not supported.

Table 41 provides a list of registers used to configure and operate SW1A/B/C and a detailed description on each one of these register is provided in Table 42 through Table 51.

Table 40. SW1A/B/C output voltage configuration

Set pointSW1x[5:0]

SW1xSTBY[5:0]SW1xOFF[5:0]

SW1x output (V) Set pointSW1x[5:0]

SW1xSTBY[5:0]SW1xOFF[5:0]

SW1x output (V)

0 000000 0.3000 32 100000 1.1000

1 000001 0.3250 33 100001 1.1250

2 000010 0.3500 34 100010 1.1500

3 000011 0.3750 35 100011 1.1750

4 000100 0.4000 36 100100 1.2000

5 000101 0.4250 37 100101 1.2250

6 000110 0.4500 38 100110 1.2500

7 000111 0.4750 39 100111 1.2750

8 001000 0.5000 40 101000 1.3000

9 001001 0.5250 41 101001 1.3250

10 001010 0.5500 42 101010 1.3500

11 001011 0.5750 43 101011 1.3750

12 001100 0.6000 44 101100 1.4000

13 001101 0.6250 45 101101 1.4250

14 001110 0.6500 46 101110 1.4500

15 001111 0.6750 47 101111 1.4750

16 010000 0.7000 48 110000 1.5000

17 010001 0.7250 49 110001 1.5250

18 010010 0.7500 50 110010 1.5500

19 010011 0.7750 51 110011 1.5750

20 010100 0.8000 52 110100 1.6000

21 010101 0.8250 53 110101 1.6250

22 010110 0.8500 54 110110 1.6500

23 010111 0.8750 55 110111 1.6750

24 011000 0.9000 56 111000 1.7000

25 011001 0.9250 57 111001 1.7250

26 011010 0.9500 58 111010 1.7500

27 011011 0.9750 59 111011 1.7750

28 011100 1.0000 60 111100 1.8000

29 011101 1.0250 61 111101 1.8250

30 011110 1.0500 62 111110 1.8500

31 011111 1.0750 63 111111 1.8750

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Table 41. SW1A/B/C register summary

Register Address Output

SW1ABVOLT 0x20 SW1AB output voltage set point in normal operation

SW1ABSTBY 0x21 SW1AB output voltage set point on standby

SW1ABOFF 0x22 SW1AB output voltage set point on sleep

SW1ABMODE 0x23 SW1AB switching mode selector register

SW1ABCONF 0x24 SW1AB DVS, phase, frequency and ILIM configuration

SW1CVOLT 0x2E SW1C output voltage set point in normal operation

SW1CSTBY 0x2F SW1C output voltage set point in standby

SW1COFF 0x30 SW1C output voltage set point in sleep

SW1CMODE 0x31 SW1C switching mode selector register

SW1CCONF 0x32 SW1C DVS, phase, frequency and ILIM configuration

Table 42. Register SW1ABVOLT - ADDR 0x20

Name Bit # R/W Default Description

SW1AB 5:0 R/W 0x00Sets the SW1AB output voltage during normal operation mode. See Table 40 for all possible configurations.

UNUSED 7:6 – 0x00 unused

Table 43. Register SW1ABSTBY - ADDR 0x21

Name Bit # R/W Default Description

SW1ABSTBY 5:0 R/W 0x00Sets the SW1AB output voltage during standby mode. See Table 40 for all possible configurations.

UNUSED 7:6 – 0x00 unused

Table 44. Register SW1ABOFF - ADDR 0x22

Name Bit # R/W Default Description

SW1ABOFF 5:0 R/W 0x00Sets the SW1AB output voltage during sleep mode. See Table 40 for all possible configurations.

UNUSED 7:6 – 0x00 unused

Table 45. Register SW1ABMODE - ADDR 0x23

Name Bit # R/W Default Description

SW1ABMODE 3:0 R/W 0x80Sets the SW1AB switching operation mode.See Table 30 for all possible configurations.

UNUSED 4 – 0x00 UNUSED

SW1ABOMODE 5 R/W 0x00Set status of SW1AB when in sleep mode

0 = OFF1 = PFM

UNUSED 7:6 – 0x00 unused

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

Table 46. Register SW1ABCONF - ADDR 0x24

Name Bit # R/W Default Description

SW1ABILIM 0 R/W 0x00SW1AB current limit level selection

0 = High level current limit1 = Low level current limit

UNUSED 1 R/W 0x00 Unused

SW1ABFREQ 3:2 R/W 0x00SW1A/B switching frequency selector.See Table 37.

SW1ABPHASE 5:4 R/W 0x00SW1A/B phase clock selection.See Table 35.

SW1ABDVSSPEED 7:6 R/W 0x00SW1A/B DVS speed selection.See Table 33.

Table 47. Register SW1CVOLT - ADDR 0x2E

Name Bit # R/W Default Description

SW1C 5:0 R/W 0x00Sets the SW1C output voltage during normal operation mode. See Table 40 for all possible configurations.

UNUSED 7:6 – 0x00 unused

Table 48. Register SW1CSTBY - ADDR 0x2F

Name Bit # R/W Default Description

SW1CSTBY 5:0 R/W 0x00Sets the SW1C output voltage during standby mode. See Table 40 for all possible configurations.

UNUSED 7:6 – 0x00 unused

Table 49. Register SW1COFF - ADDR 0x30

Name Bit # R/W Default Description

SW1COFF 5:0 R/W 0x00Sets the SW1C output voltage during sleep mode. See Table 40 for all possible configurations.

UNUSED 7:6 – 0x00 unused

Table 50. Register SW1CMODE - ADDR 0x31

Name Bit # R/W Default Description

SW1CMODE 3:0 R/W 0x80Sets the SW1C switching operation mode.See Table 29 for all possible configurations.

UNUSED 4 – 0x00 unused

SW1COMODE 5 R/W 0x00Set status of SW1C when in sleep mode

0 = OFF1 = PFM

UNUSED 7:6 – 0x00 unused

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.4.3.5 SW1A/B/C external components

Table 51. Register SW1CCONF - ADDR 0x32

Name Bit # R/W Default Description

SW1CILIM 0 R/W 0x00SW1C current limit level selection

0 = High level current limit1 = Low level current limit

UNUSED 1 R/W 0x00 Unused

SW1CFREQ 3:2 R/W 0x00SW1C switching frequency selector.See Table 37.

SW1CPHASE 5:4 R/W 0x00SW1C phase clock selection.See Table 35.

SW1CDVSSPEED 7:6 R/W 0x00SW1C DVS speed selection.See Table 33.

Table 52. SW1A/B/C external component recommendations

Components Description

Mode

A/B/C single phase

A/B single - C independent mode

A/B dual - C independent mode

CINSW1A(41) SW1A input capacitor 4.7 μF 4.7 μF 4.7 μF

CIN1AHF(41) SW1A decoupling input capacitor 0.1 μF 0.1 μF 0.1 μF

CINSW1B(41) SW1B input capacitor 4.7 μF 4.7 μF 4.7 μF

CIN1BHF(41) SW1B decoupling input capacitor 0.1 μF 0.1 μF 0.1 μF

CINSW1C(41) SW1C input capacitor 4.7 μF 4.7 μF 4.7 μF

CIN1CHF(41) SW1C decoupling input capacitor 0.1 μF 0.1 μF 0.1 μF

COSW1AB(41) SW1A/B output capacitor 6 x 22 μF 4 x 22 μF 4 x 22 μF

COSW1C(41) SW1C output capacitor – 2 x 22 μF 2 x 22 μF

LSW1A SW1A inductor 1.0 μH

DCR = 12 mΩISAT = 6.0 A

1.0 μHDCR = 12 mΩISAT = 4.5 A

1.0 μHDCR = 60 mΩISAT = 2.4 A

LSW1B SW1B inductor – –1.0 μH

DCR = 60 mΩISAT = 2.4 A

LSW1C SW1C inductor –1.0 μH

DCR = 60 mΩISAT = 2.4 A

1.0 μHDCR = 60 mΩISAT = 2.4 A

Notes41. Use X5R or X7R capacitors.

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.4.3.6 SW1A/B/C specifications

Table 53. SW1A/B/C electrical characteristics

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSW1x = 3.6 V, VSW1x = 1.2 V, ISW1x = 100 mA, SW1x_PWRSTG[2:0] = [111], typical external component values, fSW1x = 2.0 MHz, unless otherwise noted. Typical values are characterized at VIN = VINSW1x = 3.6 V, VSW1x = 1.2 V, ISW1x = 100 mA, SW1x_PWRSTG[2:0] = [111], and 25 °C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

SW1A/B/C (single phase)

VINSW1AVINSW1BVINSW1C

Operating input voltage 2.8 – 4.5 V

VSW1ABC Nominal output voltage – Table 40 – V

VSW1ABCACC

Output voltage accuracy • PWM, APS, 2.8 V < VIN < 4.5 V, 0 < ISW1ABC < 4.5 A

0.625 V ≤ VSW1ABC ≤ 1.450 V1.475 V ≤ VSW1ABC ≤ 1.875 V

• PFM, steady state, 2.8 V < VIN < 4.5 V, 0 < ISW1ABC < 150 mA

0.625 V < VSW1ABC < 0.675 V0.7 V < VSW1ABC < 0.85 V0.875 V < VSW1ABC < 1.875 V

-25-3.0%

-65-45

-3.0%

––

–––

253.0%

6545

3.0%

mV%

ISW1ABCRated output load current,

2.8 V < VIN < 4.5 V, 0.625 V < VSW1ABC < 1.875 V– – 4500 mA

ISW1ABCLIM

Current limiter peak current detection • Current through inductor

SW1ABILIM = 0SW1ABILIM = 1

7.15.3

10.57.9

13.710.3

A

VSW1ABCOSH

Start-up overshootISW1ABC = 0 mADVS clk = 25 mV/4 μs, VIN = VINSW1x = 4.5 V, VSW1ABC = 1.875 V

– – 66 mV

tONSW1ABC

Turn-on time Enable to 90% of end value ISW1x = 0 mADVS clk = 25 mV/4.0 μs, VIN = VINSW1x = 4.5 V, VSW1ABC = 1.875 V

– – 500 µs

fSW1ABC

Switching frequency SW1xFREQ[1:0] = 00SW1xFREQ[1:0] = 01SW1xFREQ[1:0] = 10

–––

1.02.04.0

–––

MHz

ηSW1ABC

Efficiency • VIN = 3.6 V, fSW1ABC = 2.0 MHz, LSW1ABC = 1.0 μH

PFM, 0.9 V, 1.0 mAPFM, 1.2 V, 50 mAAPS, PWM, 1.2 V, 850 mAAPS, PWM, 1.2 V, 1275 mAAPS, PWM, 1.2 V, 2125 mAAPS, PWM, 1.2 V, 4500 mA

––––––

778286848070

––––––

%

ΔVSW1ABC Output ripple – 10 – mV

VSW1ABCLIR Line regulation (APS, PWM) – – 20 mV

VSW1ABCLOR DC load regulation (APS, PWM) – – 20 mV

VSW1ABCLOTR

Transient load regulation• Transient load = 0 A to 2.25 A, di/dt = 100 mA/μs

OvershootUndershoot

––

––

5050

mV

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SW1A/B/C (single phase) (continued)

ISW1ABCQ

Quiescent currentPFM modeAPS mode

––

18145

––

µA

RSW1ABCDIS Discharge resistance – 600 – W

SW1A/B (single/dual phasE)

VINSW1AVINSW1B

Operating input voltage 2.8 – 4.5 V

VSW1AB Nominal output voltage – Table 40 – V

VSW1ABACC

Output voltage accuracy • PWM, APS, 2.8 V < VIN < 4.5 V, 0 < ISW1AB < 2.5 A

0.625 V ≤ VSW1AB ≤ 1.450 V1.475 V ≤ VSW1AB ≤ 1.875 V

• PFM, steady state, 2.8 V < VIN < 4.5 V, 0 < ISW1AB < 150 mA

0.625 V < VSW1AB < 0.675 V0.7 V < VSW1AB < 0.85 V0.875 V < VSW1AB < 1.875 V

-25-3.0%

-65-45

-3.0%

--

–––

253.0%

-65-45

3.0%

mV%

ISW1ABRated output load current,

2.8 V < VIN < 4.5 V, 0.625 V < VSW1AB < 1.875 V– – 2500 mA (43)

ISW1ABLIM

Current limiter peak current detection • SW1A/B single phase (current through inductor)

SW1ABILIM = 0SW1ABILIM = 1

• SW1A/B dual phase (current through inductor per phase)SW1ABILIM = 0SW1ABILIM = 1

4.53.3

2.21.6

6.54.9

3.22.4

8.56.4

4.33.2

A (43)

VSW1ABOSH

Start-up overshootISW1AB = 0.0 mADVS clk = 25 mV/4 μs, VIN = VINSW1x = 4.5 V, VSW1AB = 1.875 V

– – 66 mV

tONSW1AB

Turn-on time Enable to 90% of end value ISW1AB = 0.0 mADVS clk = 25 mV/4 μs, VIN = VINSW1x = 4.5 V, VSW1AB = 1.875 V

– – 500 µs

fSW1AB

Switching frequency SW1ABFREQ[1:0] = 00SW1ABFREQ[1:0] = 01SW1ABFREQ[1:0] = 10

–––

1.02.04.0

–––

MHz

ηSW1AB

Efficiency (single phase)• VIN = 3.6 V, fSW1AB = 2.0 MHz, LSW1AB = 1.0 μH

PFM, 0.9 V, 1.0 mAPFM, 1.2 V, 50 mAAPS, PWM, 1.2 V, 500 mAAPS, PWM, 1.2 V, 750 mAAPS, PWM, 1.2 V, 1250 mAAPS, PWM, 1.2 V, 2500 mA

––––––

828486878375

––––––

%

ΔVSW1AB Output ripple – 10 – mV

VSW1ABLIR Line regulation (APS, PWM) – – 20 mV

Table 53. SW1A/B/C electrical characteristics (continued)

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSW1x = 3.6 V, VSW1x = 1.2 V, ISW1x = 100 mA, SW1x_PWRSTG[2:0] = [111], typical external component values, fSW1x = 2.0 MHz, unless otherwise noted. Typical values are characterized at VIN = VINSW1x = 3.6 V, VSW1x = 1.2 V, ISW1x = 100 mA, SW1x_PWRSTG[2:0] = [111], and 25 °C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

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SW1A/B (single/dual phase) (continued)

VSW1ABLOR DC load regulation (APS, PWM) – – 20 mV

VSW1ABLOTR

Transient load regulation• Transient load = 0 A to 1.25 A, di/dt = 100 mA/μs

OvershootUndershoot

––

––

5050

mV

ISW1ABQ

Quiescent currentPFM modeAPS mode

––

18235

––

µA

RONSW1APSW1A P-MOSFET RDS(on)

VINSW1A = 3.3 V– 215 245 mΩ

RONSW1ANSW1A N-MOSFET RDS(on)

VINSW1A = 3.3 V– 258 326 mΩ

ISW1APQSW1A P-MOSFET leakage current

VINSW1A = 4.5 V– – 7.5 µA

ISW1ANQSW1A N-MOSFET leakage current

VINSW1A = 4.5 V– – 2.5 µA

RONSW1BPSW1B P-MOSFET RDS(on)

VINSW1B = 3.3 V– 215 245 mΩ

RONSW1BNSW1B N-MOSFET RDS(on)

VINSW1B = 3.3 V– 258 326 mΩ

ISW1BPQSW1B P-MOSFET leakage current

VINSW1B = 4.5 V– – 7.5 µA

ISW1BNQSW1B N-MOSFET leakage current

VINSW1B = 4.5 V– – 2.5 µA

RSW1ABDIS Discharge Resistance – 600 – W

SW1C (independent)

VINSW1C Operating input voltage 2.8 – 4.5 V

VSW1C Nominal output voltage – Table 40 – V

VSW1CACC

Output voltage accuracy • PWM, APS, 2.8 V < VIN < 4.5 V, 0 < ISW1C < 2.0 A

0.625 V ≤ VSW1C ≤ 1.450 V1.475 V ≤ VSW1C ≤ 1.875 V

• PFM, steady state 2.8 V < VIN < 4.5 V, 0 < ISW1C < 50 mA

0.625 V < VSW1C < 0.675 V0.7 V < VSW1C < 0.85 V0.875 V < VSW1C < 1.875 V

-25-3.0%

-65-45

-3.0%

––

–––

253.0%

6545

3.0%

mV

ISW1CRated output load current

2.8 V < VIN < 4.5 V, 0.625 V < VSW1C < 1.875 V– – 2000 mA

ISW1CLIM

Current limiter peak current detection • Current through inductor

SW1CILIM = 0SW1CILIM = 1

2.6(42)

1.954.03.0

5.23.9

A

Table 53. SW1A/B/C electrical characteristics (continued)

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSW1x = 3.6 V, VSW1x = 1.2 V, ISW1x = 100 mA, SW1x_PWRSTG[2:0] = [111], typical external component values, fSW1x = 2.0 MHz, unless otherwise noted. Typical values are characterized at VIN = VINSW1x = 3.6 V, VSW1x = 1.2 V, ISW1x = 100 mA, SW1x_PWRSTG[2:0] = [111], and 25 °C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

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48 NXP Semiconductors

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

SW1C (independent) (continued)

VSW1COSH

Start-up overshoot ISW1C = 0 mADVS clk = 25 mV/4 μs, VIN = VINSW1C = 4.5 V, VSW1C = 1.875 V

– – 66 mV

tONSW1C

Turn-on time Enable to 90% of end value ISW1C = 0 mADVS clk = 25 mV/4 μs, VIN = VINSW1C = 4.5 V, VSW1C = 1.875 V

– – 500 µs

fSW1C

Switching frequency SW1CFREQ[1:0] = 00SW1CFREQ[1:0] = 01SW1CFREQ[1:0] = 10

–––

1.02.04.0

–––

MHz

ηSW1C

Efficiency • VIN = 3.6 V, fSW1C = 2.0 MHz, LSW1C = 1.0 μH

PFM, 0.9 V, 1.0 mAPFM, 1.2 V, 50 mAAPS, PWM, 1.2 V, 400 mAAPS, PWM, 1.2 V, 600 mAAPS, PWM, 1.2 V, 1000 mAAPS, PWM, 1.2 V, 2000 mA

––––––

777886847868

––––––

%

ΔVSW1C Output ripple – 10 – mV

VSW1CLIR Line regulation (APS, PWM) – – 20 mV

VSW1CLOR DC load regulation (APS, PWM) – – 20 mV

VSW1CLOTR

Transient load regulation• Transient load = 0.0 mA to 1.0 A, di/dt = 100 mA/μs

OvershootUndershoot

––

––

5050

mV

ISW1CQ

Quiescent currentPFM modeAPS mode

––

22145

––

µA

RONSW1CPSW1C P-MOSFET RDS(on)

at VINSW1C = 3.3 V– 184 206 mΩ

RONSW1CNSW1C N-MOSFET RDS(on)

at VINSW1C = 3.3 V– 211 260 mΩ

ISW1CPQSW1C P-MOSFET leakage current

VINSW1C = 4.5 V– – 10.5 µA

ISW1CNQSW1C N-MOSFET leakage current

VINSW1C = 4.5 V– – 3.5 µA

RSW1CDIS Discharge resistance – 600 – W

Notes42. Supports the Coremark and 3D MM benchmark maximum current value of 2500 mA of the VDD_SOC_IN domain in the i.MX 6Dual/Quad

processors.43. Current rating of SW1AB supports the power virus mode of operation of the i.MX 6X processor.

Table 53. SW1A/B/C electrical characteristics (continued)

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSW1x = 3.6 V, VSW1x = 1.2 V, ISW1x = 100 mA, SW1x_PWRSTG[2:0] = [111], typical external component values, fSW1x = 2.0 MHz, unless otherwise noted. Typical values are characterized at VIN = VINSW1x = 3.6 V, VSW1x = 1.2 V, ISW1x = 100 mA, SW1x_PWRSTG[2:0] = [111], and 25 °C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

Figure 14. SW1AB and SW1C efficiency waveforms

SW1AB single phase

SW1C independent mode

Eff

icie

nc

y (

%)

SW1ABC single phase

0

10

20

30

40

50

60

70

80

90

100

0.1 1 10 100 1000 10000

PFM - Vout = 1.2VAPS - Vout = 1.2VPWM - Vout = 1.2V

Eff

icie

ncy

(%

)

Load current (mA)

0

10

20

30

40

50

60

70

80

90

100

0.1 1 10 100 1000

PFM - Vout = 1.2VAPS - Vout = 1.2VPWM - Vout = 1.2v

Load current (mA)

Eff

icie

ncy

(%

)

0

10

20

30

40

50

60

70

80

90

100

1 10 100 1000

PFM - Vout = 1.2V

APS - Vout = 1.2V

PWM - Vout = 1.2v

Load current (mA)

Eff

icie

ncy

(%

)

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50 NXP Semiconductors

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.4.4 SW2

SW2 is a single phase, 2.0 A rated buck regulator (2.5 A in NP/F9/FA versions). Table 29 describes the modes, and Table 30 show the options for the SWxMODE[3:0] bits. Figure 15 shows the block diagram and the external component connections for SW2 regulator.

Figure 15. SW2 block diagram

6.4.4.4.1 SW2 setup and control registers

SW2 output voltage is programmable from 0.400 V to 3.300 V; however, bit SW2[6] in register SW2VOLT is read-only during normal operation. Its value is determined by the default configuration, or may be changed by using the OTP registers. Therefore, once SW2[6] is set to “0”, the output is limited to the lower output voltages from 0.400 V to 1.975 V with 25 mV increments, as determined by bits SW2[5:0]. Likewise, once bit SW2[6] is set to “1”, the output voltage is limited to the higher output voltage range from 0.800 V to 3.300 V with 50 mV increments, as determined by bits SW2[5:0].

To optimize the performance of the regulator, it is recommended that only voltages from 2.000 V to 3.300 V be used in the high range, and the lower range be used for voltages from 0.400 V to 1.975 V.

The output voltage set point is independently programmed for normal, standby, and sleep mode by setting the SW2[5:0], SW2STBY[5:0] and SW2OFF[5:0] bits, respectively. However, the initial state of bit SW2[6] is copied into bits SW2STBY[6], and SW2OFF[6] bits. Therefore, the output voltage range remains the same in all three operating modes. Table 54 shows the output voltage coding valid for SW2.

Note: Voltage set points of 0.6 V and below are not supported.

Table 54. SW2 output voltage configuration

Low output voltage range(44) High output voltage range

Set Point SW2[6:0] SW2 Output Set Point SW2[6:0] SW2 Output

0 0000000 0.4000 64 1000000 0.8000

1 0000001 0.4250 65 1000001 0.8500

2 0000010 0.4500 66 1000010 0.9000

3 0000011 0.4750 67 1000011 0.9500

4 0000100 0.5000 68 1000100 1.0000

5 0000101 0.5250 69 1000101 1.0500

6 0000110 0.5500 70 1000110 1.1000

7 0000111 0.5750 71 1000111 1.1500

8 0001000 0.6000 72 1001000 1.2000

9 0001001 0.6250 73 1001001 1.2500

10 0001010 0.6500 74 1001010 1.3000

11 0001011 0.6750 75 1001011 1.3500

12 0001100 0.7000 76 1001100 1.4000

Driver

Controller

EAZ1

Z2

InternalCompensation

SW2IN

SW2LX

SW2FB

ISENSE

COSW2

CINSW2

LSW2

I2CInterface

EP

SW2

SW2MODE

SW2FAULT

VREF

DAC

I2C

VIN

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

13 0001101 0.7250 77 1001101 1.4500

14 0001110 0.7500 78 1001110 1.5000

15 0001111 0.7750 79 1001111 1.5500

16 0010000 0.8000 80 1010000 1.6000

17 0010001 0.8250 81 1010001 1.6500

18 0010010 0.8500 82 1010010 1.7000

19 0010011 0.8750 83 1010011 1.7500

20 0010100 0.9000 84 1010100 1.8000

21 0010101 0.9250 85 1010101 1.8500

22 0010110 0.9500 86 1010110 1.9000

23 0010111 0.9750 87 1010111 1.9500

24 0011000 1.0000 88 1011000 2.0000

25 0011001 1.0250 89 1011001 2.0500

26 0011010 1.0500 90 1011010 2.1000

27 0011011 1.0750 91 1011011 2.1500

28 0011100 1.1000 92 1011100 2.2000

29 0011101 1.1250 93 1011101 2.2500

30 0011110 1.1500 94 1011110 2.3000

31 0011111 1.1750 95 1011111 2.3500

32 0100000 1.2000 96 1100000 2.4000

33 0100001 1.2250 97 1100001 2.4500

34 0100010 1.2500 98 1100010 2.5000

35 0100011 1.2750 99 1100011 2.5500

36 0100100 1.3000 100 1100100 2.6000

37 0100101 1.3250 101 1100101 2.6500

38 0100110 1.3500 102 1100110 2.7000

39 0100111 1.3750 103 1100111 2.7500

40 0101000 1.4000 104 1101000 2.8000

41 0101001 1.4250 105 1101001 2.8500

42 0101010 1.4500 106 1101010 2.9000

43 0101011 1.4750 107 1101011 2.9500

44 0101100 1.5000 108 1101100 3.0000

45 0101101 1.5250 109 1101101 3.0500

46 0101110 1.5500 110 1101110 3.1000

47 0101111 1.5750 111 1101111 3.1500

48 0110000 1.6000 112 1110000 3.2000

49 0110001 1.6250 113 1110001 3.2500

50 0110010 1.6500 114 1110010 3.3000

51 0110011 1.6750 115 1110011 Reserved

52 0110100 1.7000 116 1110100 Reserved

53 0110101 1.7250 117 1110101 Reserved

Table 54. SW2 output voltage configuration (continued)

Low output voltage range(44) High output voltage range

Set Point SW2[6:0] SW2 Output Set Point SW2[6:0] SW2 Output

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52 NXP Semiconductors

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

Setup and control of SW2 is done through I2C registers listed in Table 55, and a detailed description of each one of the registers is provided in Tables 56 to Table 60.

54 0110110 1.7500 118 1110110 Reserved

55 0110111 1.7750 119 1110111 Reserved

56 0111000 1.8000 120 1111000 Reserved

57 0111001 1.8250 121 1111001 Reserved

58 0111010 1.8500 122 1111010 Reserved

59 0111011 1.8750 123 1111011 Reserved

60 0111100 1.9000 124 1111100 Reserved

61 0111101 1.9250 125 1111101 Reserved

62 0111110 1.9500 126 1111110 Reserved

63 0111111 1.9750 127 1111111 Reserved

Notes44. For voltages less than 2.0 V, only use set points 0 to 63.

Table 55. SW2 register summary

Register Address Description

SW2VOLT 0x35 Output voltage set point on normal operation

SW2STBY 0x36 Output voltage set point on standby

SW2OFF 0x37 Output voltage set point on sleep

SW2MODE 0x38 Switching mode selector register

SW2CONF 0x39 DVS, phase, frequency, and ILIM configuration

Table 56. Register SW2VOLT - ADDR 0x35

Name Bit # R/W Default Description

SW2 5:0 R/W 0x00Sets the SW2 output voltage during normal operation mode. See Table 54 for all possible configurations.

SW2 6 R 0x00Sets the operating output voltage range for SW2. Set during OTP or TBB configuration only. See Table 54 for all possible configurations.

UNUSED 7 – 0x00 unused

Table 57. Register SW2STBY - ADDR 0x36

Name Bit # R/W Default Description

SW2STBY 5:0 R/W 0x00Sets the SW2 output voltage during standby mode. See Table 54 for all possible configurations.

SW2STBY 6 R 0x00

Sets the operating output voltage range for SW2 on standby mode. This bit inherits the value configured on bit SW2[6] during OTP or TBB configuration. See Table 54 for all possible configurations.

UNUSED 7 – 0x00 unused

Table 54. SW2 output voltage configuration (continued)

Low output voltage range(44) High output voltage range

Set Point SW2[6:0] SW2 Output Set Point SW2[6:0] SW2 Output

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NXP Semiconductors 53

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.4.4.2 SW2 external components

Table 58. Register SW2OFF - ADDR 0x37

Name Bit # R/W Default Description

SW2OFF 5:0 R/W 0x00Sets the SW2 output voltage during sleep mode. See Table 54 for all possible configurations.

SW2OFF 6 R 0x00

Sets the operating output voltage range for SW2 on sleep mode. This bit inherits the value configured on bit SW2[6] during OTP or TBB configuration. See Table 54 for all possible configurations.

UNUSED 7 – 0x00 unused

Table 59. Register SW2MODE - ADDR 0x38

Name Bit # R/W Default Description

SW2MODE 3:0 R/W 0x80Sets the SW2 switching operation mode.See Table 29 for all possible configurations.

UNUSED 4 – 0x00 unused

SW2OMODE 5 R/W 0x00Set status of SW2 when in sleep mode

0 = OFF1 = PFM

UNUSED 7:6 – 0x00 unused

Table 60. Register SW2CONF - ADDR 0x39

Name Bit # R/W Default Description

SW2ILIM 0 R/W 0x00SW2 current limit level selection (45)

0 = High level current limit1 = Low level current limit

UNUSED 1 R/W 0x00 unused

SW2FREQ 3:2 R/W 0x00SW2 switching frequency selector.See Table 37.

SW2PHASE 5:4 R/W 0x00SW2 phase clock selection.See Table 35.

SW2DVSSPEED 7:6 R/W 0x00SW2 DVS speed selection.See Table 34.

Notes45. SW2ILIM = 0 must be used in NP/F9/FA versions if 2.5 A output load current is desired

Table 61. SW2 external component recommendations

Components Description Values

CINSW2(46) SW2 input capacitor 4.7 μF

CIN2HF(46) SW2 decoupling input capacitor 0.1 μF

COSW2(46) SW2 output capacitor 2 x 22 μF

LSW2 SW2 inductor 1.0 μH

DCR = 50 mΩISAT = 2.65 A

Notes46. Use X5R or X7R capacitors.

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54 NXP Semiconductors

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.4.4.3 SW2 specifications

Table 62. SW2 electrical characteristics

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSW2 = 3.6 V, VSW2 = 3.15 V, ISW2 = 100 mA, SW2_PWRSTG[2:0] = [111], typical external component values, fSW2 = 2.0 MHz, unless otherwise noted. Typical values are characterized at VIN = VINSW2 = 3.6 V, VSW2 = 3.15 V, ISW2 = 100 mA, SW2_PWRSTG[2:0] = [111], and 25 °C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

Switch mode supply SW2

VINSW2 Operating input voltage 2.8 – 4.5 V (47)

VSW2 Nominal output voltage – Table 54 – V

VSW2ACC

Output voltage accuracy • PWM, APS, 2.8 V < VIN < 4.5 V, 0 < ISW2 < 2.0 A

0.625 V < VSW2 < 0.85 V0.875 V < VSW2 < 1.975 V2.0 V < VSW2 < 3.3 V

• PFM, 2.8 V < VIN < 4.5 V, 0 < ISW2 ≤ 50 mA

0.625 V < VSW2 < 0.675 V0.7 V < VSW2 < 0.85 V0.875 V < VSW2 < 1.975 V2.0 V < VSW2 < 3.3 V

-25-3.0%-6.0%

-65-45

-3.0%-3.0%

–––

––––

253.0%6.0%

6545

3.0%3.0%

mV%

ISW2

Rated output load current • 2.8 V < VIN < 4.5 V, 0.625 V < VSW2 < 3.3 V• 2.8 V < VIN < 4.5 V, 1.2 V < VSW2 < 3.3 V, SW2LIM = 0

––

––

20002500

mA (48)

(49)

ISW2LIM

Current limiter peak current detection • Current through inductor

SW2ILIM = 0SW2ILIM = 1

2.82.1

4.03.0

5.23.9

A

VSW2OSH

Start-up overshootISW2 = 0.0 mA DVS clk = 25 mV/4 μs, VIN = VINSW2 = 4.5 V

– – 66 mV

tONSW2

Turn-on time Enable to 90% of end value ISW2 = 0.0 mADVS clk = 50 mV/8 μs, VIN = VINSW2 = 4.5 V

– – 550 µs

fSW2

Switching frequency SW2FREQ[1:0] = 00SW2FREQ[1:0] = 01SW2FREQ[1:0] = 10

–––

1.02.04.0

–––

MHz

ηSW2

Efficiency• VIN = 3.6 V, fSW2 = 2.0 MHz, LSW2 = 1.0 μH

PFM, 3.15 V, 1.0 mAPFM, 3.15 V, 50 mAAPS, PWM, 3.15 V, 400 mAAPS, PWM, 3.15 V, 600 mAAPS, PWM, 3.15 V, 1000 mAAPS, PWM, 3.15 V, 2000 mA

––––––

949596949288

––––––

%

ΔVSW2 Output ripple – 10 – mV

VSW2LIR Line regulation (APS, PWM) – – 20 mV

VSW2LOR DC load regulation (APS, PWM) – – 20 mV

VSW2LOTR

Transient load regulation• Transient load = 0.0 mA to 1.0 A, di/dt = 100 mA/μs

OvershootUndershoot

––

––

5050

mV

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

Figure 16. SW2 efficiency waveforms

Switch mode supply SW2 (continued)

ISW2Q

Quiescent currentPFM modeAPS mode (low output voltage settings)APS mode (high output voltage settings)

–––

23145305

–––

µA

RONSW2PSW2 P-MOSFET RDS(on)

at VIN = VINSW2 = 3.3 V– 190 209 mΩ

RONSW2NSW2 N-MOSFET RDS(on)

at VIN = VINSW2 = 3.3 V– 212 255 mΩ

ISW2PQSW2 P-MOSFET leakage current

VIN = VINSW2 = 4.5 V– – 12 µA

ISW2NQSW2 N-MOSFET leakage current

VIN = VINSW2 = 4.5 V– – 4.0 µA

RSW2DIS Discharge resistance – 600 – W

Notes47. When output is set to > 2.6 V the output will follow the input down when VIN gets near 2.8 V.

48. The higher output voltages available depend on the voltage drop in the conduction path as given by the following equation: (VINSW2 - VSW2) = ISW2* (DCR of Inductor +RONSW2P + PCB trace resistance).

49. Applies to NP/F9/FA versions

Table 62. SW2 electrical characteristics (continued)

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSW2 = 3.6 V, VSW2 = 3.15 V, ISW2 = 100 mA, SW2_PWRSTG[2:0] = [111], typical external component values, fSW2 = 2.0 MHz, unless otherwise noted. Typical values are characterized at VIN = VINSW2 = 3.6 V, VSW2 = 3.15 V, ISW2 = 100 mA, SW2_PWRSTG[2:0] = [111], and 25 °C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

0

10

20

30

40

50

60

70

80

90

100

0.1 1 10 100 1000

PFM - Vout = 3.15V

APS - Vout = 3.15V

PWM - Vout = 3.15V

Eff

icie

nc

y (%

)

Load current (mA)

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56 NXP Semiconductors

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.4.5 SW3A/B

SW3A/B are 1.25 A to 2.5 A rated buck regulators, depending on the configuration. Table 29 describes the available switching modes and Table 30 show the actual configuration options for the SW3xMODE[3:0] bits.

SW3A/B can be configured in various phasing schemes, depending on the desired cost/performance trade-offs. The following configurations are available:

• A single phase

• A dual phase

• Independent regulators

The desired configuration is programmed in OTP by using the SW3_CONFIG[1:0] bits.Table 63 shows the options for the SW3CFG[1:0] bits.

6.4.4.5.1 SW3A/B single phase

In this configuration, SW3ALX and SW3BLX are connected in single phase with a single inductor a shown in Figure 17. This configuration reduces cost and component count. Feedback is taken from the SW3AFB pin and the SW3BFB pin must be left open. Although control is from SW3A, registers of both regulators, SW3A and SW3B, must be identically set.

Figure 17. SW3A/B single phase block diagram

Table 63. SW3 configuration

SW3_CONFIG[1:0] Description

00 A/B single phase

01 A/B single phase

10 A/B dual phase

11 A/B independent

Driver

Controller

SW3AIN

SW3ALX

SW3AFB

ISENSE

COSW3A

CINSW3A

LSW3A

I2CInterface

SW3

SW3AMODE

SW3AFAULT

VIN

Driver

Controller

SW3BIN

SW3BLX

ISENSE

CINSW3B

EP

SW3BMODE

SW3BFAULT

VIN

EAZ1

Z2

InternalCompensation

VREF

DAC

I2C

EAZ1

Z2

InternalCompensation

VREF

DAC

I2C

SW3BFB

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.4.5.2 SW3A/B dual phase

SW3A/B can be connected in dual phase configuration using one inductor per switching node, as shown in Figure 18. This mode allows a smaller output voltage ripple. Feedback is taken from pin SW3AFB and pin SW3BFB must be left open. Although control is from SW3A, registers of both regulators, SW3A and SW3B, must be identically set. In this configuration, the regulators switch 180 degrees apart.

Figure 18. SW3A/B dual phase block diagram

6.4.4.5.3 SW3A - SW3B independent outputs

SW3A and SW3B can be configured as independent outputs as shown in Figure 19, providing flexibility for applications requiring more voltage rails with less current capability. Each output is configured and controlled independently by its respective I2C registers as shown in Table 65.

Driver

Controller

EAZ1

Z2

InternalCompensation

SW3AIN

SW3ALX

SW3AFB

ISENSE

COSW3A

CINSW3A

LSW3A

I2CInterface

SW3

SW3AMODE

SW3AFAULT

VREF

DAC

I2C

VIN

Driver

Controller

SW3BIN

SW3BLX

ISENSE

COSW3B

CINSW3B

LSW3B

EP

SW3BMODE

SW3BFAULT

VIN

EAZ1

Z2

InternalCompensation

VREF

DAC

I2C

SW3BFB

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58 NXP Semiconductors

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

Figure 19. SW3A/B independent output block diagram

6.4.4.5.4 SW3A/B setup and control registers

SW3A/B output voltage is programmable from 0.400 V to 3.300 V; however, bit SW3x[6] in register SW3xVOLT is read-only during normal operation. Its value is determined by the default configuration, or may be changed by using the OTP registers. Therefore, once SW3x[6] is set to “0”, the output is limited to the lower output voltages from 0.40 V to 1.975 V with 25 mV increments, as determined by bits SW3x[5:0]. Likewise, once bit SW3x[6] is set to "1", the output voltage is limited to the higher output voltage range from 0.800 V to 3.300 V with 50 mV increments, as determined by bits SW3x[5:0].

In order to optimize the performance of the regulator, it is recommended that only voltages from 2.00 to 3.300 V be used in the high range and the lower range be used for voltages from 0.400 V to 1.975 V.

The output voltage set point is independently programmed for normal, standby, and sleep mode by setting the SW3x[5:0], SW3xSTBY[5:0], and SW3xOFF[5:0] bits respectively; however, the initial state of the SW3x[6] bit is copied into the SW3xSTBY[6] and SW3xOFF[6] bits. Therefore, the output voltage range remains the same on all three operating modes. Table 64 shows the output voltage coding valid for SW3x.

Note: Voltage set points of 0.6 V and below are not supported.

Table 64. SW3A/B output voltage configuration

Low output voltage range(50) High output voltage range

Set point SW3x[6:0] SW3x output Set point SW3x[6:0] sw3x output

0 0000000 0.4000 64 1000000 0.8000

1 0000001 0.4250 65 1000001 0.8500

2 0000010 0.4500 66 1000010 0.9000

3 0000011 0.4750 67 1000011 0.9500

4 0000100 0.5000 68 1000100 1.0000

Driver

Controller

EAZ1

Z2

InternalCompensation

SW3AIN

SW3ALX

SW3AFB

ISENSE

COSW3A

CINSW3A

LSW3A

I2CInterface

SW3A

SW3AMODE

SW3AFAULT

VREF

DAC

I2C

VIN

Driver

Controller

EAZ1

Z2

InternalCompensation

SW3BIN

SW3BLX

SW3BFB

ISENSE

COSW3B

CINSW3B

LSW3B

EP

SW3B

SW3BMODE

SW3BFAULT

VREF

DAC

I2C

VIN

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5 0000101 0.5250 69 1000101 1.0500

6 0000110 0.5500 70 1000110 1.1000

7 0000111 0.5750 71 1000111 1.1500

8 0001000 0.6000 72 1001000 1.2000

9 0001001 0.6250 73 1001001 1.2500

10 0001010 0.6500 74 1001010 1.3000

11 0001011 0.6750 75 1001011 1.3500

12 0001100 0.7000 76 1001100 1.4000

13 0001101 0.7250 77 1001101 1.4500

14 0001110 0.7500 78 1001110 1.5000

15 0001111 0.7750 79 1001111 1.5500

16 0010000 0.8000 80 1010000 1.6000

17 0010001 0.8250 81 1010001 1.6500

18 0010010 0.8500 82 1010010 1.7000

19 0010011 0.8750 83 1010011 1.7500

20 0010100 0.9000 84 1010100 1.8000

21 0010101 0.9250 85 1010101 1.8500

22 0010110 0.9500 86 1010110 1.9000

23 0010111 0.9750 87 1010111 1.9500

24 0011000 1.0000 88 1011000 2.0000

25 0011001 1.0250 89 1011001 2.0500

26 0011010 1.0500 90 1011010 2.1000

27 0011011 1.0750 91 1011011 2.1500

28 0011100 1.1000 92 1011100 2.2000

29 0011101 1.1250 93 1011101 2.2500

30 0011110 1.1500 94 1011110 2.3000

31 0011111 1.1750 95 1011111 2.3500

32 0100000 1.2000 96 1100000 2.4000

33 0100001 1.2250 97 1100001 2.4500

34 0100010 1.2500 98 1100010 2.5000

35 0100011 1.2750 99 1100011 2.5500

36 0100100 1.3000 100 1100100 2.6000

37 0100101 1.3250 101 1100101 2.6500

38 0100110 1.3500 102 1100110 2.7000

39 0100111 1.3750 103 1100111 2.7500

40 0101000 1.4000 104 1101000 2.8000

41 0101001 1.4250 105 1101001 2.8500

42 0101010 1.4500 106 1101010 2.9000

43 0101011 1.4750 107 1101011 2.9500

44 0101100 1.5000 108 1101100 3.0000

45 0101101 1.5250 109 1101101 3.0500

Table 64. SW3A/B output voltage configuration (continued)

Low output voltage range(50) High output voltage range

Set point SW3x[6:0] SW3x output Set point SW3x[6:0] sw3x output

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Table 65 provides a list of registers used to configure and operate SW3A/B. A detailed description on each of these register is provided on Tables 66 through Table 75.

46 0101110 1.5500 110 1101110 3.1000

47 0101111 1.5750 111 1101111 3.1500

48 0110000 1.6000 112 1110000 3.2000

49 0110001 1.6250 113 1110001 3.2500

50 0110010 1.6500 114 1110010 3.3000

51 0110011 1.6750 115 1110011 Reserved

52 0110100 1.7000 116 1110100 Reserved

53 0110101 1.7250 117 1110101 Reserved

54 0110110 1.7500 118 1110110 Reserved

55 0110111 1.7750 119 1110111 Reserved

56 0111000 1.8000 120 1111000 Reserved

57 0111001 1.8250 121 1111001 Reserved

58 0111010 1.8500 122 1111010 Reserved

59 0111011 1.8750 123 1111011 Reserved

60 0111100 1.9000 124 1111100 Reserved

61 0111101 1.9250 125 1111101 Reserved

62 0111110 1.9500 126 1111110 Reserved

63 0111111 1.9750 127 1111111 Reserved

Notes50. For voltages less than 2.0 V, only use set points 0 to 63.

Table 65. SW3AB register summary

Register Address Output

SW3AVOLT 0x3C SW3A output voltage set point on normal operation

SW3ASTBY 0x3D SW3A output voltage set point on standby

SW3AOFF 0x3E SW3A output voltage set point on sleep

SW3AMODE 0x3F SW3A switching mode selector register

SW3ACONF 0x40 SW3A DVS, phase, frequency and ILIM configuration

SW3BVOLT 0x43 SW3B output voltage set point on normal operation

SW3BSTBY 0x44 SW3B output voltage set point on standby

SW3BOFF 0x45 SW3B output voltage set point on sleep

SW3BMODE 0x46 SW3B switching mode selector register

SW3BCONF 0x47 SW3B DVS, phase, frequency and ILIM configuration

Table 64. SW3A/B output voltage configuration (continued)

Low output voltage range(50) High output voltage range

Set point SW3x[6:0] SW3x output Set point SW3x[6:0] sw3x output

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Table 66. Register SW3AVOLT - ADDR 0x3C

Name Bit # R/W Default Description

SW3A 5:0 R/W 0x00

Sets the SW3A output voltage (Independent) or SW3A/B output voltage (single/dual phase), during normal operation mode. See Table 64 for all possible configurations.

SW3A 6 R 0x00

Sets the operating output voltage range for SW3A (independent) or SW3A/B (single/dual phase). Set during OTP or TBB configuration only. See Table 64 for all possible configurations.

UNUSED 7 – 0x00 unused

Table 67. Register SW3ASTBY - ADDR 0x3D

Name Bit # R/W Default Description

SW3ASTBY 5:0 R/W 0x00

Sets the SW3A output voltage (independent) or SW3A/B output voltage (single/dual phase), during standby mode. See Table 64 for all possible configurations.

SW3ASTBY 6 R 0x00

Sets the operating output voltage range for SW3A (independent) or SW3A/B (single/dual phase) on standby mode. This bit inherits the value configured on bit SW3A[6] during OTP or TBB configuration. See Table 64 for all possible configurations.

UNUSED 7 – 0x00 unused

Table 68. Register SW3AOFF - ADDR 0x3E

Name Bit # R/W Default Description

SW3AOFF 5:0 R/W 0x00

Sets the SW3A output voltage (independent) or SW3A/B output voltage (single/dual phase), during sleep mode. See Table 64 for all possible configurations.

SW3AOFF 6 R 0x00

Sets the operating output voltage range for SW3A (independent) or SW3A/B (single/dual phase) on sleep mode. This bit inherits the value configured on bit SW3A[6] during OTP or TBB configuration. See Table 64 for all possible configurations.

UNUSED 7 – 0x00 unused

Table 69. Register SW3AMODE - ADDR 0x3F

Name Bit # R/W Default Description

SW3AMODE 3:0 R/W 0x80Sets the SW3A (Independent) or SW3A/B (single/dual phase) switching operation mode.See Table 29 for all possible configurations.

UNUSED 4 – 0x00 unused

SW3AOMODE 5 R/W 0x00

Set status of SW3A (independent) or SW3A/B (single/dual phase) when in sleep mode.

0 = OFF1 = PFM

UNUSED 7:6 – 0x00 unused

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Table 70. Register SW3ACONF - ADDR 0x40

Name Bit # R/W Default Description

SW3AILIM 0 R/W 0x00SW3A current limit level selection

0 = High level current limit1 = Low level current limit

UNUSED 1 R/W 0x00 unused

SW3AFREQ 3:2 R/W 0x00SW3A switching frequency selector. See Table 37.

SW3APHASE 5:4 R/W 0x00 SW3A phase clock selection. See Table 35.

SW3ADVSSPEED 7:6 R/W 0x00 SW3A DVS speed selection. See Table 34.

Table 71. Register SW3BVOLT - ADDR 0x43

Name Bit # R/W Default Description

SW3B 5:0 R/W 0x00Sets the SW3B output voltage (independent) during normal operation mode. See Table 64 for all possible configurations.

SW3B 6 R 0x00

Sets the operating output voltage range for SW3B (independent). Set during OTP or TBB configuration only. See Table 64 for all possible configurations.

UNUSED 7 – 0x00 unused

Table 72. Register SW3BSTBY - ADDR 0x44

Name Bit # R/W Default Description

SW3BSTBY 5:0 R/W 0x00Sets the SW3B output voltage (Independent) during standby mode. See Table 64 for all possible configurations.

SW3BSTBY 6 R 0x00

Sets the operating output voltage range for SW3B (independent) on standby mode. This bit inherits the value configured on bit SW3B[6] during OTP or TBB configuration. See Table 64 for all possible configurations.

UNUSED 7 – 0x00 unused

Table 73. Register SW3BOFF - ADDR 0x45

Name Bit # R/W Default Description

SW3BOFF 5:0 R/W 0x00Sets the SW3B output voltage (independent) during sleep mode. See Table 64 for all possible configurations.

SW3BOFF 6 R 0x00

Sets the operating output voltage range for SW3B (independent) on sleep mode. This bit inherits the value configured on bit SW3B[6] during OTP or TBB configuration. See Table 64 for all possible configurations.

UNUSED 7 – 0x00 unused

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NXP Semiconductors 63

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.4.5.5 SW3A/B external components

Table 74. Register SW3BMODE - ADDR 0x46

Name Bit # R/W Default Description

SW3BMODE 3:0 R/W 0x80Sets the SW3B (Independent) switching operation mode. See Table 29 for all possible configurations.

UNUSED 4 – 0x00 unused

SW3BOMODE 5 R/W 0x00

Set status of SW3B (Independent) when in sleep mode.

0 = OFF1 = PFM

UNUSED 7:6 – 0x00 unused

Table 75. Register SW3BCONF - ADDR 0x47

Name Bit # R/W Default Description

SW3BILIM 0 R/W 0x00SW3B current limit level selection

0 = High level current limit1 = Low level current limit

UNUSED 1 R/W 0x00 unused

SW3BFREQ 3:2 R/W 0x00 SW3B switching frequency selector. See Table 37.

SW3BPHASE 5:4 R/W 0x00 SW3B phase clock selection. See Table 35.

SW3BDVSSPEED 7:6 R/W 0x00 SW3B DVS speed selection. See Table 34.

Table 76. SW3A/B external component requirements

Mode

Components DescriptionSW3A/B single

phaseSW3A/B dual

phase SW3A independentSW3B independent

CINSW3A(51) SW3A input capacitor 4.7 μF 4.7 μF 4.7 μF

CIN3AHF(51) SW3A decoupling input capacitor 0.1 μF 0.1 μF 0.1 μF

CINSW3B(51) SW3B input capacitor 4.7 μF 4.7 μF 4.7 μF

CIN3BHF(51) SW3B decoupling input capacitor 0.1 μF 0.1 μF 0.1 μF

COSW3A(51) SW3A output capacitor 4 x 22 μF 2 x 22 μF 2 x 22 μF

COSW3B(51) SW3B output capacitor – 2 x 22 μF 2 x 22 μF

LSW3A SW3A inductor 1.0 μH

DCR = 50 mΩISAT = 3.9 A

1.0 μHDCR = 60 mΩISAT = 3.0 A

1.0 μHDCR = 60 mΩISAT = 3.0 A

LSW3B SW3B inductor –1.0 μH

DCR = 60 mΩISAT = 3.0 A

1.0 μHDCR = 60 mΩISAT = 3.0 A

Notes51. Use X5R or X7R capacitors.

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64 NXP Semiconductors

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.4.5.6 SW3A/B specifications

Table 77. SW3A/B electrical characteristics

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSW3x = 3.6 V, VSW3x = 1.5 V, ISW3x = 100 mA, SW3x_PWRSTG[2:0] = [111], typical external component values, fSW3x = 2.0 MHz, single/dual phase and independent mode, unless otherwise noted. Typical values are characterized at VIN = VINSW3x = 3.6 V, VSW3x = 1.5 V, ISW3x = 100 mA, SW3x_PWRSTG[2:0] = [111], and 25 °C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

Switch mode supply SW3a/B

VINSW3x Operating input voltage 2.8 – 4.5 V (52)

VSW3x Nominal output voltage - Table 64 - V

VSW3xACC

Output voltage accuracy • PWM, APS 2.8 V < VIN < 4.5 V, 0 < ISW3x < ISW3xMAX

0.625 V < VSW3x < 0.85 V0.875 V < VSW3x < 1.975 V2.0 V < VSW3x < 3.3 V

• PFM , steady state (2.8 V < VIN < 4.5 V, 0 < ISW3x < 50 mA)

0.625 V < VSW3x < 0.675 V0.7 V < VSW3x < 0.85 V0.875 V < VSW3x < 1.975 V2.0 V < VSW3x < 3.3 V

-25-3.0%-6.0%

-65-45

-3.0%-3.0%

–––

––––

253.0%6.0%

6545

3.0%3.0%

mV%

ISW3x

Rated output load current • 2.8 V < VIN < 4.5 V, 0.625 V < VSW3x < 3.3 V

PWM, APS mode single/dual phase PWM, APS mode independent (per phase)

––

––

25001250

mA (53)

ISW3xLIM

Current limiter peak current detection• Single phase (current through inductor)

SW3xILIM = 0SW3xILIM = 1

• Independent mode or dual phase (current through inductor per phase)SW3xILIM = 0SW3xILIM = 1

3.52.7

1.81.3

5.03.8

2.51.9

6.54.9

3.32.5

A

VSW3xOSH

Start-up overshoot ISW3x = 0.0 mADVS clk = 25 mV/4 μs, VIN = VINSW3x = 4.5 V

– – 66 mV

tONSW3x

Turn-on timeEnable to 90% of end value ISW3x = 0 mADVS clk = 25 mV/4 μs, VIN = VINSW3x = 4.5 V

– – 500 µs

fSW3x

Switching frequency SW3xFREQ[1:0] = 00SW3xFREQ[1:0] = 01SW3xFREQ[1:0] = 10

–––

1.02.04.0

–––

MHz

ηSW3AB

Efficiency (single phase)• fSW3 = 2.0 MHz, LSW3x 1.0 μH

PFM, 1.5 V, 1.0 mAPFM, 1.5 V, 50 mAAPS, PWM 1.5 V, 500 mAAPS, PWM 1.5 V, 750 mAAPS, PWM 1.5 V, 1250 mAAPS, PWM 1.5 V, 2500 mA

––––––

848589898580

––––––

%

ΔVSW3x Output ripple – 10 – mV

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

Switch mode supply SW3a/B (continued)

VSW3xLIR Line regulation (APS, PWM) – – 20 mV

VSW3xLOR DC load regulation (APS, PWM) – – 20 mV

VSW3xLOTR

Transient load regulation• Transient load = 0.0 mA to ISW3x/2, di/dt = 100 mA/μs

OvershootUndershoot

––

––

5050

mV

ISW3xQ

Quiescent currentPFM mode (single/dual phase)APS mode (single/dual phase)PFM mode (independent mode)APS mode (SW3A independent mode)APS mode (SW3B independent mode)

–––––

2230050

250150

–––––

µA

RONSW3APSW3A P-MOSFET RDS(on)

at VIN = VINSW3A = 3.3 V– 215 245 mΩ

RONSW3ANSW3A N-MOSFET RDS(on)

at VIN = VINSW3A = 3.3 V– 258 326 mΩ

ISW3APQSW3A P-MOSFET leakage current

VIN = VINSW3A = 4.5 V– – 7.5 µA

ISW3ANQSW3A N-MOSFET leakage current

VIN = VINSW3A = 4.5 V– – 2.5 µA

RONSW3BPSW3B P-MOSFET RDS(on)

at VIN = VINSW3B = 3.3 V– 215 245 mΩ

RONSW3BNSW3B N-MOSFET RDS(on)

at VIN = VINSW3B = 3.3 V– 258 326 mΩ

ISW3BPQSW3B P-MOSFET leakage current

VIN = VINSW3B = 4.5 V– – 7.5 µA

ISW3BPQSW3B N-MOSFET leakage current

VIN = VINSW3B = 4.5 V– – 2.5 µA

RSW3xDIS Discharge resistance – 600 – W

Notes52. When output is set to > 2.6 V the output will follow the input down when VIN gets near 2.8 V.

53. The higher output voltages available depend on the voltage drop in the conduction path as given by the following equation: (VINSW3x - VSW3x) = ISW3x* (DCR of Inductor +RONSW3xP + PCB trace resistance).

Table 77. SW3A/B electrical characteristics (continued)

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSW3x = 3.6 V, VSW3x = 1.5 V, ISW3x = 100 mA, SW3x_PWRSTG[2:0] = [111], typical external component values, fSW3x = 2.0 MHz, single/dual phase and independent mode, unless otherwise noted. Typical values are characterized at VIN = VINSW3x = 3.6 V, VSW3x = 1.5 V, ISW3x = 100 mA, SW3x_PWRSTG[2:0] = [111], and 25 °C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

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Figure 20. SW3AB single phase efficiency waveforms

6.4.4.6 SW4

SW4 is a 1.0 A rated single phase buck regulator capable of operating in two modes. In its default mode, it operates as a normal buck regulator with a programmable output between 0.400 V and 3.300 V. It is capable of operating in the three available switching modes: PFM, APS, and PWM, described on Table 29 and configured by the SW4MODE[3:0] bits, as shown in Table 30.

If the system requires DDR memory termination, SW4 can be used in its VTT mode. In the VTT mode, its reference voltage tracks the output voltage of SW3A, scaled by 0.5. Furthermore, when in VTT mode, only the PWM switching mode is allowed. The VTT mode can be configured by use of VTT bit in the OTP_SW4_CONFIG register.

Figure 21 shows the block diagram and the external component connections for the SW4 regulator.

Figure 21. SW4 block diagram

6.4.4.6.1 SW4 setup and control registers

To set the SW4 in regulator or VTT mode, bit VTT of the register OTP_SW4_CONF register on Table 136. Extended page 1, page 106, is programmed during OTP or TBB configuration; setting bit VTT to “1” enables SW4 to operate in VTT mode and “0” in Regulator mode. See 6.1.2 One time programmability (OTP), page 20 for detailed information on OTP configuration.

In regulator mode, the SW4 output voltage is programmable from 0.400 V to 3.300 V; however, bit SW4[6] in the SW4VOLT register is read-only during normal operation. Its value is determined by the default configuration, or may be changed by using the OTP registers. Once SW4[6] is set to “0”, the output is limited to the lower output voltages, from 0.400 V to 1.975 V with 25 mV increments, as determined by the SW4[5:0] bits. Likewise, once the SW4[6] bit is set to "1", the output voltage is limited to the higher output voltage range from 0.800 V to 3.300 V with 50 mV increments, as determined by the SW4[5:0] bits.

0

10

20

30

40

50

60

70

80

90

100

0.1 1 10 100 1000

PFM - Vout = 1.5V

APS - Vout = 1.5V

PWM - Vout = 1.5V

Eff

icie

nc

y (%

)

Load current (mA)

Driver

Controller

EAZ1

Z2

InternalCompensation

SW4IN

SW4LX

SW4FB

ISENSE

COSW4

CINSW4

LSW4

I2CInterface

EP

SW4

SW4MODE

SW4FAULT

VREF

DAC

I2C

VIN

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To optimize the performance of the regulator, it is recommended that only voltages from 2.000 V to 3.300 V be used in the high range and that that the lower range be used for voltages from 0.400 V to 1.975 V.

The output voltage set point is independently programmed for normal, standby, and sleep mode by setting the SW4[5:0], SW4STBY[5:0], and SW4OFF[5:0] bits, respectively. However, the initial state of the SW4[6] bit is copied into bits SW4STBY[6], and SW4OFF[6] bits, so the output voltage range remains the same on all three operating modes. Table 78 shows the output voltage coding valid for SW4.

Note: Voltage set points of 0.6 V and below are not supported, except in VTT mode.

Table 78. SW4 output voltage configuration

Low output voltage range(54) High output voltage range

Set Point SW4[6:0] SW4 output Set Point SW4[6:0] SW4 output

0 0000000 0.4000 64 1000000 0.8000

1 0000001 0.4250 65 1000001 0.8500

2 0000010 0.4500 66 1000010 0.9000

3 0000011 0.4750 67 1000011 0.9500

4 0000100 0.5000 68 1000100 1.0000

5 0000101 0.5250 69 1000101 1.0500

6 0000110 0.5500 70 1000110 1.1000

7 0000111 0.5750 71 1000111 1.1500

8 0001000 0.6000 72 1001000 1.2000

9 0001001 0.6250 73 1001001 1.2500

10 0001010 0.6500 74 1001010 1.3000

11 0001011 0.6750 75 1001011 1.3500

12 0001100 0.7000 76 1001100 1.4000

13 0001101 0.7250 77 1001101 1.4500

14 0001110 0.7500 78 1001110 1.5000

15 0001111 0.7750 79 1001111 1.5500

16 0010000 0.8000 80 1010000 1.6000

17 0010001 0.8250 81 1010001 1.6500

18 0010010 0.8500 82 1010010 1.7000

19 0010011 0.8750 83 1010011 1.7500

20 0010100 0.9000 84 1010100 1.8000

21 0010101 0.9250 85 1010101 1.8500

22 0010110 0.9500 86 1010110 1.9000

23 0010111 0.9750 87 1010111 1.9500

24 0011000 1.0000 88 1011000 2.0000

25 0011001 1.0250 89 1011001 2.0500

26 0011010 1.0500 90 1011010 2.1000

27 0011011 1.0750 91 1011011 2.1500

28 0011100 1.1000 92 1011100 2.2000

29 0011101 1.1250 93 1011101 2.2500

30 0011110 1.1500 94 1011110 2.3000

31 0011111 1.1750 95 1011111 2.3500

32 0100000 1.2000 96 1100000 2.4000

33 0100001 1.2250 97 1100001 2.4500

34 0100010 1.2500 98 1100010 2.5000

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Full setup and control of SW4 is done through the I2C registers listed on Table 79, and a detailed description of each one of the registers is provided in Tables 80 to Table 84.

35 0100011 1.2750 99 1100011 2.5500

36 0100100 1.3000 100 1100100 2.6000

37 0100101 1.3250 101 1100101 2.6500

38 0100110 1.3500 102 1100110 2.7000

39 0100111 1.3750 103 1100111 2.7500

40 0101000 1.4000 104 1101000 2.8000

41 0101001 1.4250 105 1101001 2.8500

42 0101010 1.4500 106 1101010 2.9000

43 0101011 1.4750 107 1101011 2.9500

44 0101100 1.5000 108 1101100 3.0000

45 0101101 1.5250 109 1101101 3.0500

46 0101110 1.5500 110 1101110 3.1000

47 0101111 1.5750 111 1101111 3.1500

48 0110000 1.6000 112 1110000 3.2000

49 0110001 1.6250 113 1110001 3.2500

50 0110010 1.6500 114 1110010 3.3000

51 0110011 1.6750 115 1110011 Reserved

52 0110100 1.7000 116 1110100 Reserved

53 0110101 1.7250 117 1110101 Reserved

54 0110110 1.7500 118 1110110 Reserved

55 0110111 1.7750 119 1110111 Reserved

56 0111000 1.8000 120 1111000 Reserved

57 0111001 1.8250 121 1111001 Reserved

58 0111010 1.8500 122 1111010 Reserved

59 0111011 1.8750 123 1111011 Reserved

60 0111100 1.9000 124 1111100 Reserved

61 0111101 1.9250 125 1111101 Reserved

62 0111110 1.9500 126 1111110 Reserved

63 0111111 1.9750 127 1111111 Reserved

Notes54. For voltages less than 2.0 V, only use set points 0 to 63.

Table 79. SW4 register summary

Register Address Description

SW4VOLT 0x4A Output voltage set point on normal operation

SW4STBY 0x4B Output voltage set point on standby

SW4OFF 0x4C Output voltage set point on sleep

SW4MODE 0x4D Switching mode selector register

SW4CONF 0x4E DVS, phase, frequency and ILIM configuration

Table 78. SW4 output voltage configuration (continued)

Low output voltage range(54) High output voltage range

Set Point SW4[6:0] SW4 output Set Point SW4[6:0] SW4 output

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Table 80. Register SW4VOLT - ADDR 0x4A

Name Bit # R/W Default Description

SW4 5:0 R/W 0x00Sets the SW4 output voltage during normal operation mode. See Table 78 for all possible configurations.

SW4 6 R 0x00Sets the operating output voltage range for SW4. Set during OTP or TBB configuration only. See Table 78 for all possible configurations.

UNUSED 7 – 0x00 unused

Table 81. Register SW4STBY - ADDR 0x4B

Name Bit # R/W Default Description

SW4STBY 5:0 R/W 0x00Sets the SW4 output voltage during standby mode. See Table 78 for all possible configurations.

SW4STBY 6 R 0x00

Sets the operating output voltage range for SW4 on standby mode. This bit inherits the value configured on bit SW4[6] during OTP or TBB configuration. See Table 78 for all possible configurations.

UNUSED 7 – 0x00 unused

Table 82. Register SW4OFF - ADDR 0x4C

Name Bit # R/W Default Description

SW4OFF 5:0 R/W 0x00Sets the SW4 output voltage during sleep mode. See Table 78 for all possible configurations.

SW4OFF 6 R 0x00

Sets the operating output voltage range for SW4 on sleep mode. This bit inherits the value configured on bit SW4[6] during OTP or TBB configuration. See Table 78 for all possible configurations.

UNUSED 7 – 0x00 unused

Table 83. Register SW4MODE - ADDR 0x4D

Name Bit # R/W Default Description

SW4MODE 3:0 R/W 0x80Sets the SW4 switching operation mode.See Table 29 for all possible configurations.

UNUSED 4 – 0x00 unused

SW4OMODE 5 R/W 0x00Set status of SW4 when in sleep mode

0 = OFF1 = PFM

UNUSED 7:6 – 0x00 unused

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6.4.4.6.2 SW4 external components

6.4.4.6.3 SW4 specifications

Table 84. Register SW4CONF - ADDR 0x4E

Name Bit # R/W Default Description

SW4ILIM 0 R/W 0x00SW4 current limit level selection

0 = High level Current limit1 = Low level Current limit

UNUSED 1 R/W 0x00 unused

SW4FREQ 3:2 R/W 0x00 SW4 switching frequency selector. See Table 37.

SW4PHASE 5:4 R/W 0x00 SW4 phase clock selection. See Table 35.

SW4DVSSPEED 7:6 R/W 0x00 SW4 DVS speed selection. See Table 34.

Table 85. SW4 external component requirements

Components Description Values

CINSW4(55) SW4 input capacitor 4.7 μF

CIN4HF(55) SW4 decoupling input capacitor 0.1 μF

COSW4(55) SW4 output capacitor 2 x 22 μF

LSW4 SW4 inductor 1.0 μH

DCR = 60 mΩISAT = 3.0 A

Notes55. Use X5R or X7R capacitors.

Table 86. SW4 electrical characteristics

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSW4 = 3.6 V, VSW4 = 1.8 V, ISW4 = 100 mA, SW4_PWRSTG[2:0] = [101], typical external component values, fSW4 = 2.0 MHz, single/dual phase and independent mode, unless otherwise noted. Typical values are characterized at VIN = VINSW4 = 3.6 V, VSW4 = 1.8 V, ISW4 = 100 mA, SW4_PWRSTG[2:0] = [101], and 25 °C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

Switch Mode Supply SW4

VINSW4 Operating input voltage 2.8 – 4.5 V (56)

VSW4

Nominal output voltageNormal operationVTT mode

––

Table 78VSW3AFB/2

––

V

VSW4ACC

Output voltage accuracy • PWM, APS, 2.8 V < VIN < 4.5 V, 0 < ISW4 < 1.0 A

0.625 V < VSW4 < 0.85 V0.875 V < VSW4 < 1.975 V2.0 V < VSW4 < 3.3 V

• PFM, steady state, 2.8 V < VIN < 4.5 V, 0 < ISW4 < 50 mA

0.625 V < VSW4 < 0.675 V0.7 V < VSW4 < 0.85 V0.875 V < VSW4 < 1.975 V2.0 V < VSW4 < 3.3 V

• VTT mode , 2.8 V < VIN < 4.5 V, 0 < ISW4 < 1.0 A

-25-3.0%-6.0%

-65-45

-3.0%-3.0%

-40

–––

––––

253.0%6.0%

6545

3.0%3.0%

40

mV %

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Switch mode supply SW4 (continued)

ISW4Rated output load current

2.8 V < VIN < 4.5 V, 0.625 V < VSW4 < 3.3 V– – 1000 mA (57)

ISW4LIM

Current limiter peak current detectionCurrent through inductor

SW4ILIM = 0SW4ILIM = 1

1.41.0

2.01.5

3.02.4

A

VSW4OSH

Start-up overshootISW4 = 0.0 mADVS clk = 25 mV/4 μs, VIN = VINSW4 = 4.5 V

– – 66 mV

tONSW4

Turn-on timeEnable to 90% of end value ISW4 = 0.0 mADVS clk = 25 mV/4 μs, VIN = VINSW4 = 4.5 V

– – 500 µs

fSW4

Switching frequency SW4FREQ[1:0] = 00SW4FREQ[1:0] = 01SW4FREQ[1:0] = 10

–––

1.02.04.0

–––

MHz

ηSW4

Efficiency • fSW4 = 2.0 MHz, LSW4 = 1.0 μH

PFM, 1.8 V, 1.0 mA PFM, 1.8 V, 50 mA APS, PWM 1.8 V, 200 mA APS, PWM 1.8 V, 500 mAAPS, PWM 1.8 V, 1000 mA

PWM 0.75 V, 200 mA PWM 0.75 V, 500 mAPWM 0.75 V, 1000 mA

–––––

–––

8178878884

787666

–––––

–––

%

ΔVSW4 Output ripple – 10 – mV

VSW4LIR Line regulation (APS, PWM) – – 20 mV

VSW4LOR DC load regulation (APS, PWM) – – 20 mV

VSW4LOTR

Transient load regulation• Transient load = 0.0 mA to 500 mA, di/dt = 100 mA/μs

OvershootUndershoot

––

––

5050

mV

ISW4Q

Quiescent currentPFM modeAPS mode

––

22145

––

µA

RONSW4PSW4 P-MOSFET RDS(on)

at VIN = VINSW4 = 3.3 V– 236 274 mΩ

RONSW4NSW4 N-MOSFET RDS(on)

at VIN = VINSW4 = 3.3 V– 293 378 mΩ

ISW4PQSW4 P-MOSFET leakage current

VIN = VINSW4 = 4.5 V– – 6.0 µA

ISW4NQSW4 N-MOSFET leakage current

VIN = VINSW4 = 4.5 V– – 2.0 µA

Table 86. SW4 electrical characteristics (continued)

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSW4 = 3.6 V, VSW4 = 1.8 V, ISW4 = 100 mA, SW4_PWRSTG[2:0] = [101], typical external component values, fSW4 = 2.0 MHz, single/dual phase and independent mode, unless otherwise noted. Typical values are characterized at VIN = VINSW4 = 3.6 V, VSW4 = 1.8 V, ISW4 = 100 mA, SW4_PWRSTG[2:0] = [101], and 25 °C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

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Figure 22. SW4 efficiency waveforms

6.4.5 Boost regulatorSWBST is a boost regulator with a programmable output from 5.0 V to 5.15 V. SWBST can supply the VUSB regulator for the USB PHY in OTG mode, as well as the VBUS voltage. Note that the parasitic leakage path for a boost regulator causes the SWBSTOUT and SWBSTFB voltage to be a Schottky drop below the input voltage whenever SWBST is disabled. The switching NMOS transistor is integrated on-chip. Figure 23 shows the block diagram and component connection for the boost regulator.

RSW4DIS Discharge Resistance – 600 – W

Notes56. When the output is set to > 2.6 V, the output follows the input down when VIN gets near 2.8 V.

57. The higher output voltages available depend on the voltage drop in the conduction path as given by the following equation: (VINSW4 - VSW4) = ISW4* (DCR of Inductor +RONSW4P + PCB trace resistance).

Table 86. SW4 electrical characteristics (continued)

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSW4 = 3.6 V, VSW4 = 1.8 V, ISW4 = 100 mA, SW4_PWRSTG[2:0] = [101], typical external component values, fSW4 = 2.0 MHz, single/dual phase and independent mode, unless otherwise noted. Typical values are characterized at VIN = VINSW4 = 3.6 V, VSW4 = 1.8 V, ISW4 = 100 mA, SW4_PWRSTG[2:0] = [101], and 25 °C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

Eff

icie

ncy

(%

)

Load current (mA)

0

10

20

30

40

50

60

70

80

90

100

0.1 1 10 100 1000

PFM - Vout = 1.8VAPS - Vout = 1.8VPWM - Vout = 1.8VPWM - Vout = 0.75V

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Figure 23. Boost Regulator Architecture

6.4.5.1 SWBST setup and control

Boost regulator control is done through a single register SWBSTCTL described in Table 87. SWBST is included in the power-up sequence if its OTP power-up timing bits, SWBST_SEQ[4:0], are not all zeros.

Table 87. Register SWBSTCTL - ADDR 0x66

Name Bit # R/W Default Description

SWBST1VOLT 1:0 R/W 0x00

Set the output voltage for SWBST00 = 5.000 V01 = 5.050 V10 = 5.100 V11 = 5.150 V

SWBST1MODE 3:2 R 0x02

Set the switching mode on normal operation00 = OFF01 = PFM10 = Auto (Default)(58)

11 = APS

UNUSED 4 – 0x00 unused

SWBST1STBYMODE 6:5 R/W 0x02

Set the switching mode on standby00 = OFF01 = PFM10 = Auto (Default)(58)

11 = APS

UNUSED 7 – 0x00 unused

Notes58. In auto mode, the controller automatically switches between PFM and APS modes depending on the load current.

The SWBST regulator starts up by default in the auto mode, if SWBST is part of the startup sequence.

SWBSTLXVOBST

Driver

Controller

EAZ1

Z2

InternalCompensation

I2CInterface

SWBSTMODE

VREFUV

VREF

EP

VIN

LBSTCINBST

DBST

SWBSTFB

RSENSE

SCVREFSC

SWBSTFAULTOC

UV

COSWBST

SWBSTIN

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6.4.5.2 SWBST external components

6.4.5.3 SWBST specifications

Table 88. SWBST external component requirements

Components Description Values

CINBST(59) SWBST input capacitor 10 μF

CINBSTHF(59) SWBST decoupling input capacitor 0.1 μF

COBST(59) SWBST output capacitor 2 x 22 μF

LSBST SWBST inductor 2.2 μH

DBST SWBST boost diode 1.0 A, 20 V Schottky

Notes59. Use X5R or X7R capacitors.

Table 89. SWBST electrical specifications

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSWBST = 3.6 V, VSWBST = 5.0 V, ISWBST = 100 mA, typical external component values, fSWBST = 2.0 MHz, otherwise noted. Typical values are characterized at VIN = VINSWBST = 3.6 V, VSWBST = 5.0 V, ISWBST = 100 mA, and 25 °C, unless otherwise noted.

Symbol Parameters Min. Typ. Max. Units Notes

Switch mode supply SWBST

VINSWBST Input voltage range 2.8 – 4.5 V

VSWBST Nominal output voltage – Table 87 – V

VSWBSTACC

Output voltage accuracy2.8 V ≤ VIN ≤ 4.5 V 0 < ISWBST < ISWBSTMAX

-4.0 – 3.0 %

ΔVSWBST

Output ripple2.8 V ≤ VIN ≤ 4.5 V 0 < ISWBST < ISWBSTMAX, excluding reverse recovery of Schottky diode

– – 120 mV Vp-p

VSWBSTLORDC load regulation

0 < ISWBST < ISWBSTMAX– 0.5 – mV/mA

VSWBSTLIRDC line regulation

2.8 V ≤ VIN ≤ 4.5 V, ISWBST = ISWBSTMAX– 50 – mV

ISWBST

Continuous load current 2.8 V ≤ VIN ≤ 3.0 V3.0 V ≤ VIN ≤ 4.5 V

––

––

500600

mA

ISWBSTQQuiescent current

auto– 222 289 μA

RDSONBST MOSFET on resistance – 206 306 mΩ

ISWBSTLIM Peak current limit 1400 2200 3200 mA (60)

VSWBSTOSHStart-up overshoot

ISWBST = 0.0 mA– – 500 mV

VSWBSTTR

Transient load response ISWBST from 1.0 mA to 100 mA in 1.0 µs Maximum transient amplitude

– – 300 mV

VSWBSTTR

Transient load responseISWBST from 100 mA to 1.0 mA in 1.0 µs Maximum transient amplitude

– – 300 mV

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6.4.6 LDO regulators descriptionThis section describes the LDO regulators provided by the PF0100Z. All regulators use the main bandgap as reference. Refer to 6.3 Bias and references block description, page 23 for further information on the internal reference voltages.

A low-power mode is automatically activated by reducing bias currents when the load current is less than I_Lmax/5. However, the lowest bias currents may be attained by forcing the part into its low-power mode by setting the VGENxLPWR bit. The use of this bit is only recommended when the load is expected to be less than I_Lmax/50, otherwise performance may be degraded. When a regulator is disabled, the output is discharged by an internal pull-down. The pull-down is also activated when RESETBMCU is low.

Figure 24. General LDO block diagram

Switch mode supply SWBST (continued)

tSWBSTTR

Transient load responseISWBST from 1.0 mA to 100 mA in 1.0 µs Time to settle 80% of transient

– – 500 µs

tSWBSTTR

Transient load response ISWBST from 100 mA to 1.0 mA in 1.0 µs Time to settle 80% of transient

– – 20 ms

ISWBSTHSQNMOS Off leakage

SWBSTIN = 4.5 V, SWBSTMODE [1:0] = 00– 1.0 5.0 µA

tONSWBSTTurn-on time

Enable to 90% of VSWBST, ISWBST = 0.0 mA– – 2.0 ms

fSWBST Switching frequency – 2.0 – MHz

ηSWBSTEfficiency

ISWBST = ISWBSTMAX– 86 – %

Notes60. Only in auto mode.

Table 89. SWBST electrical specifications (continued)

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = VINSWBST = 3.6 V, VSWBST = 5.0 V, ISWBST = 100 mA, typical external component values, fSWBST = 2.0 MHz, otherwise noted. Typical values are characterized at VIN = VINSWBST = 3.6 V, VSWBST = 5.0 V, ISWBST = 100 mA, and 25 °C, unless otherwise noted.

Symbol Parameters Min. Typ. Max. Units Notes

VGENx

VINx

VINx

VGENx

CGENx

VGENxEN

VGENxLPWR

VREF

VGENx

I2CInterface

Discharge

+

_

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6.4.6.1 Transient response waveforms

Idealized stimulus and response waveforms for transient line and transient load tests are depicted in Figure 25. Note that the transient line and load response refers to the overshoot, or undershoot only, excluding the DC shift.

Figure 25. Transient waveforms

6.4.6.2 Short-circuit protection

All general purpose LDOs have short-circuit protection capability. The short-circuit protection (SCP) system includes debounced fault condition detection, regulator shutdown, and processor interrupt generation, to contain failures and minimize the chance of product damage. If a short-circuit condition is detected, the LDO is disabled by resetting its VGENxEN bit, while at the same time, an interrupt VGENxFAULTI is generated to flag the fault to the system processor. The VGENxFAULTI interrupt is maskable through the VGENxFAULTM mask bit.

The SCP feature is enabled by setting the REGSCPEN bit. If this bit is not set, the regulators do not automatically disable upon a short-circuit detection. However, the current limiter continues to limit the output current of the regulator. By default, the REGSCPEN is not set; therefore, at start-up none of the regulators are disabled if an overloaded condition occurs. A fault interrupt, VGENxFAULTI, is generated in an overload condition regardless of the state of the REGSCPEN bit. See Table 90 for SCP behavior configuration.

Table 90. Short-circuit behavior

REGSCPEN[0] Short-circuit behavior

0 Current limit

1 Shutdown

10 us 10 us

VINx

Transient Line Stimulus

VINx_INITIAL

VINx_FINAL

1.0 us 1.0 us

IMAX/10

IMAX

ILOAD

Transient Load Stimulus

Undershoot

IL = IMAX/10

VOUT

VOUT Transient Load Response

IL = IMAX Overshoot

Undershoot

VOUT

VOUT Transient Line Response

Overshoot VINx_INITIAL

VINx_FINAL

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6.4.6.3 LDO regulator control

Each LDO is fully controlled through its respective VGENxCTL register. This register enables the user to set the LDO output voltage according to Table 91 for VGEN1 and VGEN2; and uses the voltage set point on Table 92 for VGEN3 through VGEN6.

Besides the output voltage configuration, the LDOs can be enabled or disabled at anytime during normal mode operation, as well as be programmed to stay “ON” or be disabled when the PMIC enters standby mode. Each regulator has associated I2C bits for this. Table 93presents a summary of all valid combinations of the control bits on VGENxCTL register and the expected behavior of the LDO output.

Table 91. VGEN1, VGEN2 output voltage configuration

Set point VGENx[3:0] VGENx output (V)

0 0000 0.800

1 0001 0.850

2 0010 0.900

3 0011 0.950

4 0100 1.000

5 0101 1.050

6 0110 1.100

7 0111 1.150

8 1000 1.200

9 1001 1.250

10 1010 1.300

11 1011 1.350

12 1100 1.400

13 1101 1.450

14 1110 1.500

15 1111 1.550

Table 92. VGEN3/ 4/ 5/ 6 output voltage configuration

Set point VGENx[3:0] VGENx output (V)

0 0000 1.80

1 0001 1.90

2 0010 2.00

3 0011 2.10

4 0100 2.20

5 0101 2.30

6 0110 2.40

7 0111 2.50

8 1000 2.60

9 1001 2.70

10 1010 2.80

11 1011 2.90

12 1100 3.00

13 1101 3.10

14 1110 3.20

15 1111 3.30

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For more detail information, Table 94 through Table 99 provide a description of all registers necessary to operate all six general purpose LDO regulators.

Table 93. LDO control

VGENxEN VGENxLPWR VGENxSTBY STANDBY(61) VGENxOUT

0 X X X Off

1 0 0 X On

1 1 0 X Low Power

1 X 1 0 On

1 0 1 1 Off

1 1 1 1 Low Power

Notes61. STANDBY refers to a standby event as described earlier.

Table 94. Register VGEN1CTL - ADDR 0x6C

Name Bit # R/W Default Description

VGEN1 3:0 R/W 0x80Sets VGEN1 output voltage.See Table 91 for all possible configurations.

VGEN1EN 4 – 0x00Enables or disables VGEN1 output

0 = OFF1 = ON

VGEN1STBY 5 R/W 0x00Set VGEN1 output state when in standby. Refer to Table 93.

VGEN1LPWR 6 R/W 0x00Enable low-power mode for VGEN1. Refer to Table 93.

UNUSED 7 – 0x00 unused

Table 95. Register VGEN2CTL - ADDR 0x6D

Name Bit # R/W Default Description

VGEN2 3:0 R/W 0x80Sets VGEN2 output voltage.See Table 91 for all possible configurations.

VGEN2EN 4 – 0x00Enables or disables VGEN2 output

0 = OFF1 = ON

VGEN2STBY 5 R/W 0x00Set VGEN2 output state when in standby. Refer to Table 93.

VGEN2LPWR 6 R/W 0x00Enable low-power mode for VGEN2. Refer to Table 93.

UNUSED 7 – 0x00 unused

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Table 96. Register VGEN3CTL - ADDR 0x6E

Name Bit # R/W Default Description

VGEN3 3:0 R/W 0x80Sets VGEN3 output voltage.See Table 92 for all possible configurations.

VGEN3EN 4 – 0x00Enables or disables VGEN3 output

0 = OFF1 = ON

VGEN3STBY 5 R/W 0x00Set VGEN3 output state when in standby. Refer to Table 93.

VGEN3LPWR 6 R/W 0x00Enable low-power mode for VGEN3. Refer to Table 93.

UNUSED 7 – 0x00 unused

Table 97. Register VGEN4CTL - ADDR 0x6F

Name Bit # R/W Default Description

VGEN4 3:0 R/W 0x80Sets VGEN4 output voltage.See Table 92 for all possible configurations.

VGEN4EN 4 – 0x00Enables or disables VGEN4 output

0 = OFF1 = ON

VGEN4STBY 5 R/W 0x00Set VGEN4 output state when in standby. Refer to Table 93.

VGEN4LPWR 6 R/W 0x00Enable low-power mode for VGEN4. Refer to Table 93.

UNUSED 7 – 0x00 unused

Table 98. Register VGEN5CTL - ADDR 0x70

Name Bit # R/W Default Description

VGEN5 3:0 R/W 0x80Sets VGEN5 output voltage.See Table 92 for all possible configurations.

VGEN5EN 4 – 0x00Enables or disables VGEN5 output

0 = OFF1 = ON

VGEN5STBY 5 R/W 0x00Set VGEN5 output state when in standby. Refer to Table 93.

VGEN5LPWR 6 R/W 0x00Enable low-power mode for VGEN5. Refer to Table 93.

UNUSED 7 – 0x00 unused

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6.4.6.4 External components

Table 100 lists the typical component values for the general purpose LDO regulators.

6.4.6.5 LDO specifications

6.4.6.5.1 VGEN1

Table 99. Register VGEN6CTL - ADDR 0x71

Name Bit # R/W Default Description

VGEN6 3:0 R/W 0x80Sets VGEN6 output voltage.See Table 92 for all possible configurations.

VGEN6EN 4 – 0x00Enables or disables VGEN6 output

0 = OFF1 = ON

VGEN6STBY 5 R/W 0x00Set VGEN6 output state when in standby. Refer to Table 93.

VGEN6LPWR 6 R/W 0x00Enable low-power mode for VGEN6. Refer to Table 93.

UNUSED 7 – 0x00 unused

Table 100. LDO external components

Regulator Output capacitor (μF)(62)

VGEN1 2.2

VGEN2 4.7

VGEN3 2.2

VGEN4 4.7

VGEN5 2.2

VGEN6 2.2

Notes

62. Use X5R/X7R ceramic capacitors.

Table 101. VGEN1 electrical characteristics

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VIN1 = 3.0 V, VGEN1[3:0] = 1111, IGEN1 = 10 mA, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, IN1 = 3.0 V, VGEN1[3:0] = 1111, IGEN1 = 10 mA, and 25 °C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

VGEN1

VIN1 Operating input voltage 1.75 – 3.40 V

VGEN1NOM Nominal output voltage – Table 91 – V

IGEN1 Operating load current 0.0 – 100 mA

VGEN1 DC

VGEN1TOL

Output voltage tolerance 1.75 V < VIN1 < 3.4 V 0.0 mA < IGEN1 < 100 mAVGEN1[3:0] = 0000 to 1111

-3.0 – 3.0 %

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NXP Semiconductors 81

PF0100Z

FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

VGEN1LOR

Load regulation(VGEN1 at IGEN1 = 100 mA) - (VGEN1 at IGEN1 = 0.0 mA) For any 1.75 V < VIN1 < 3.4 V

– 0.15 – mV/mA

VGEN1LIR

Line regulation(VGEN1 at VIN1 = 3.4 V) - (VGEN1 at VIN1 = 1.75 V) For any 0.0 mA < IGEN1 < 100 mA

– 0.30 – mV/mA

IGEN1LIMCurrent limit

IGEN1 when VGEN1 is forced to VGEN1NOM/2122 167 200 mA

IGEN1OCP

Overcurrent protection threshold IGEN1 required to cause the SCP function to disable LDO when REGSCPEN = 1

115 – 200 mA

IGEN1Q

Quiescent currentNo load, Change in IVIN and IVIN1When VGEN1 enabled

– 14 – μA

VGEN1 AC and transient

PSRRVGEN1

PSRR• IGEN1 = 75 mA, 20 Hz to 20 kHz

VGEN1[3:0] = 0000 - 1101VGEN1[3:0] = 1110, 1111

5037

6045

––

dB (63)

NOISEVGEN1

Output noise densityVIN1 = 1.75 V, IGEN1 = 75 mA100 Hz – <1.0 kHz1.0 kHz – <10 kHz10 kHz – 1.0 MHz

–––

-108-118-124

-100-108-112

dBV/ √Hz

SLWRVGEN1

Turn-on slew rate• 10% to 90% of end value• 1.75 V ≤ VIN1 ≤ 3.4 V, IGEN1 = 0.0 mA

VGEN1[3:0] = 0000 to 0111VGEN1[3:0] = 1000 to 1111

––

––

12.516.5

mV/μs

GEN1tON

Turn-on timeEnable to 90% of end value, VIN1 = 1.75 V, 3.4 VIGEN1 = 0.0 mA

60 – 500 μs

GEN1tOFF

Turn-off timeDisable to 10% of initial value, VIN1 = 1.75 V IGEN1 = 0.0 mA

– – 10 ms

GEN1OSHTStart-up overshoot

VIN1 = 1.75 V, 3.4 V, IGEN1 = 0.0 mA– 1.0 2.0 %

VGEN1LOTR

Transient load response• VIN1 = 1.75 V, 3.4 V

IGEN1 = 10 mA to 100 mA in 1.0 μs. Peak of overshoot or undershoot of VGEN1 with respect to final value

• Refer to Figure 25

– – 3.0 %

Table 101. VGEN1 electrical characteristics (continued)

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VIN1 = 3.0 V, VGEN1[3:0] = 1111, IGEN1 = 10 mA, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, IN1 = 3.0 V, VGEN1[3:0] = 1111, IGEN1 = 10 mA, and 25 °C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

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82 NXP Semiconductors

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.6.5.2 VGEN2

VGEN1LITR

Transient line response• IGEN1 = 75 mA

VIN1INITIAL = 1.75 V to VIN1FINAL = 2.25 V for VGEN1[3:0] = 0000 to 1101VIN1INITIAL = VGEN1+0.3 V to VIN1FINAL = VGEN1+0.8 V for VGEN1[3:0] = 1110, 1111

• Refer to Figure 25

– 5.0 8.0 mV

Notes63. The PSRR of the regulators is measured with the perturbing signal at the input of the regulator. The power management IC is supplied separately

from the input of the regulator and does not contain the perturbed signal. During measurements, care must be taken not to operate in the dropout region of the regulator under test.

Table 102. VGEN2 electrical characteristics

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VIN1 = 3.0 V, VGEN2[3:0] = 1111, IGEN2 = 10 mA, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6V, VIN1 = 3.0 V, VGEN2[3:0] = 1111, IGEN2 = 10mA and 25°C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

VGEN2

VIN1 Operating input voltage 1.75 – 3.40 V

VGEN2NOM Nominal output voltage – Table 91 – V

IGEN2 Operating load current 0.0 – 250 mA

VGEN2 active mode - DC

VGEN2TOL

Output voltage tolerance1.75 V < VIN1 < 3.4 V 0.0 mA < IGEN2 < 250 mAVGEN2[3:0] = 0000 to 1111

-3.0 – 3.0 %

VGEN2LOR

Load regulation (VGEN2 at IGEN2 = 250 mA) - (VGEN2 at IGEN2 = 0.0 mA) For any 1.75 V < VIN1 < 3.4 V

– 0.05 – mV/mA

VGEN2LIR

Line regulation (VGEN2 at VIN1 = 3.4 V) - (VGEN2 at VIN1 = 1.75 V)For any 0.0 mA < IGEN2 < 250 mA

– 0.50 – mV/mA

IGEN2LIM

Current limitIGEN2 when VGEN2 is forced to VGEN2NOM/2PF0100ZPF0100AZ

333305

417417

510510

mA

IGEN2OCP

Overcurrent protection thresholdIGEN2 required to cause the SCP function to disable LDO when REGSCPEN = 1PF0100ZPF0100AZ

300290

––

500500

mA

IGEN2Q

Quiescent currentNo load, Change in IVIN and IVIN1When VGEN2 enabled

– 16 – μA

Table 101. VGEN1 electrical characteristics (continued)

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VIN1 = 3.0 V, VGEN1[3:0] = 1111, IGEN1 = 10 mA, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, IN1 = 3.0 V, VGEN1[3:0] = 1111, IGEN1 = 10 mA, and 25 °C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

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NXP Semiconductors 83

PF0100Z

FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

VGEN2 AC and transient

PSRRVGEN2

PSRR (64)

• IGEN2 = 187.5 mA, 20 Hz to 20 kHz

VGEN2[3:0] = 0000 - 1101VGEN2[3:0] = 1110, 1111

5037

6045

––

dB

NOISEVGEN2

Output noise density• VIN1 = 1.75 V, IGEN2 = 187.5 mA

100 Hz – <1.0 kHz1.0 kHz – <10 kHz10 kHz – 1.0 MHz

–––

-108-118-124

-100-108-112

dBV/√Hz

SLWRVGEN2

Turn-on slew rate• 10% to 90% of end value• 1.75 V ≤ VIN1 ≤ 3.4 V, IGEN2 = 0.0 mA

VGEN2[3:0] = 0000 to 0111VGEN2[3:0] = 1000 to 1111

––

––

12.516.5

mV/μs

GEN2tON

Turn-on timeEnable to 90% of end value, VIN1 = 1.75 V, 3.4 VIGEN2 = 0.0 mA

60 – 500 μs

GEN2tOFF

Turn-off timeDisable to 10% of initial value, VIN1 = 1.75 V IGEN2 = 0.0 mA

– – 10 ms

GEN2OSHTStart-up overshoot

VIN1 = 1.75 V, 3.4 V, IGEN2 = 0.0 mA– 1.0 2.0 %

VGEN2LOTR

Transient load responseVIN1 = 1.75 V, 3.4 VIGEN2 = 25 mA to 250 mA in 1.0 μsPeak of overshoot or undershoot of VGEN2 with respect to final valueRefer to Figure 25

– – 3.0 %

VGEN2LITR

Transient line responseIGEN2 = 187.5 mAVIN1INITIAL = 1.75 V to VIN1FINAL = 2.25 V for VGEN2[3:0] = 0000 to 1101VIN1INITIAL = VGEN2+0.3 V to VIN1FINAL = VGEN2+0.8 V for VGEN2[3:0] = 1110, 1111Refer to Figure 25

– 5.0 8.0 mV

Notes64. The PSRR of the regulators is measured with the perturbing signal at the input of the regulator. The power management IC is supplied separately

from the input of the regulator and does not contain the perturbed signal. During measurements, care must be taken not to operate in the dropout region of the regulator under test.

Table 102. VGEN2 electrical characteristics (continued)

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VIN1 = 3.0 V, VGEN2[3:0] = 1111, IGEN2 = 10 mA, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6V, VIN1 = 3.0 V, VGEN2[3:0] = 1111, IGEN2 = 10mA and 25°C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

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84 NXP Semiconductors

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.6.5.3 VGEN3

Table 103. VGEN3 electrical characteristics

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VIN2 = 3.6 V, VGEN3[3:0] = 1111, IGEN3 = 10 mA, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, VIN2 = 3.6 V, VGEN3[3:0] = 1111, IGEN3 = 10 mA, and 25 °C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

VGEN3

VIN2

Operating input voltage1.8 V ≤ VGEN3NOM ≤ 2.5 V2.6 V ≤ VGEN3NOM ≤ 3.3 V

2.8VGEN3NO

M+ 0.250––

3.63.6

V

(65)

VGEN3NOM Nominal output voltage – Table 92 – V

IGEN3 Operating load current 0.0 – 100 mA

VGEN3 DC

VGEN3TOL

Output voltage tolerance VIN2MIN < VIN2 < 3.6 V 0.0 mA < IGEN3 < 100 mAVGEN3[3:0] = 0000 to 1111

-3.0 – 3.0 %

VGEN3LOR

Load regulation(VGEN3 at IGEN3 = 100 mA) - (VGEN3 at IGEN3 = 0.0 mA) For any VIN2MIN < VIN2 < 3.6 V

– 0.07 – mV/mA

VGEN3LIR

Line regulation(VGEN3 at VIN2 = 3.6 V) - (VGEN3 at VIN2MIN )For any 0.0 mA < IGEN3 < 100 mA

– 0.8 – mV/mA

IGEN3LIMCurrent limit

IGEN3 when VGEN3 is forced to VGEN3NOM/2127 167 200 mA

IGEN3OCP

Overcurrent protection threshold IGEN3 required to cause the SCP function to disable LDO when REGSCPEN = 1

120 – 200 mA

IGEN3Q

Quiescent currentNo load, Change in IVIN and IVIN2When VGEN3 enabled

– 13 – μA

VGEN3 AC and transient

PSRRVGEN3

PSRR• IGEN3 = 75 mA, 20 Hz to 20 kHz

VGEN3[3:0] = 0000 - 1110, VIN2 = VIN2MIN + 100 mVVGEN3[3:0] = 0000 - 1000, VIN2 = VGEN3NOM + 1.0 V

3555

4060

––

dB (66)

NOISEVGEN3

Output noise density• VIN2 = VIN2MIN, IGEN3 = 75 mA

100 Hz – <1.0 kHz1.0 kHz – <10 kHz10 kHz – 1.0 MHz

–––

-114-129-135

-102-123-130

dBV/√Hz

SLWRVGEN3

Turn-on slew rate• 10% to 90% of end value• VIN2MIN ≤ VIN2 ≤ 3.6 V, IGEN3 = 0.0 mA

VGEN3[3:0] = 0000 to 0011VGEN3[3:0] = 0100 to 0111VGEN3[3:0] = 1000 to 1011VGEN3[3:0] = 1100 to 1111

––––

––––

22.026.530.534.5

mV/μs

GEN3tON

Turn-on timeEnable to 90% of end value, VIN2 = VIN2MIN, 3.6 VIGEN3 = 0.0 mA

60 – 500 μs

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.6.5.4 VGEN4

VGEN3 AC and transient (continued)

GEN3tOFF

Turn-off timeDisable to 10% of initial value, VIN2 = VIN2MIN IGEN3 = 0.0 mA

– – 10 ms

GEN3OSHTStart-up overshoot

VIN2 = VIN2MIN, 3.6 V, IGEN3 = 0.0 mA– 1.0 2.0 %

VGEN3LOTR

Transient load responseVIN2 = VIN2MIN, 3.6 VIGEN3 = 10 mA to 100 mA in 1.0 μsPeak of overshoot or undershoot of VGEN3 with respect to final value. Refer to Figure 25

– – 3.0 %

VGEN3LITR

Transient line responseIGEN3 = 75 mAVIN2INITIAL = 2.8 V to VIN2FINAL = 3.3 V for GEN3[3:0] = 0000 to 0111VIN2INITIAL = VGEN3+0.3 V to VIN2FINAL = VGEN3+0.8 V for VGEN3[3:0] = 1000 to 1010VIN2INITIAL = VGEN3+0.25 V to VIN2FINAL = 3.6 V for VGEN3[3:0] = 1011 to 1111Refer to Figure 25

– 5.0 8.0 mV

Notes65. When the LDO Output voltage is set above 2.6 V, the minimum allowed input voltage needs to be at least the output voltage plus 0.25 V, for proper

regulation due to the dropout voltage generated through the internal LDO transistor.66. The PSRR of the regulators is measured with the perturbing signal at the input of the regulator. The power management IC is supplied separately

from the input of the regulator and does not contain the perturbed signal. During measurements, care must be taken not to operate in the dropout region of the regulator under test. VIN2MIN refers to the minimum allowed input voltage for a particular output voltage.

Table 104. VGEN4 electrical characteristics

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VIN2 = 3.6 V, VGEN4[3:0] = 1111, IGEN4 = 10 mA, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, VIN2 = 3.6 V, VGEN4[3:0] = 1111, IGEN4 = 10 mA, and 25 °C, unless otherwise noted.

Symbol Parameter Min Typ Max Unit Notes

VGEN4

VIN2

Operating input voltage 1.8 V ≤ VGEN4NOM ≤ 2.5 V2.6 V ≤ VGEN4NOM ≤ 3.3 V

2.8VGEN4NO

M+ 0.250

––

3.63.6

V

(67)

VGEN4NOM Nominal output voltage – Table 92 – V

IGEN4 Operating load current 0.0 – 350 mA

VGEN4 DC

VGEN4TOL

Output voltage tolerance VIN2MIN < VIN2 < 3.6 V 0.0 mA < IGEN4 < 350 mAVGEN4[3:0] = 0000 to 1111

-3.0 – 3.0 %

VGEN4LOR

Load regulation (VGEN4 at IGEN4 = 350 mA) - (VGEN4 at IGEN4 = 0.0 mA )For any VIN2MIN < VIN2 < 3.6 V

– 0.07 – mV/mA

Table 103. VGEN3 electrical characteristics (continued)

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VIN2 = 3.6 V, VGEN3[3:0] = 1111, IGEN3 = 10 mA, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, VIN2 = 3.6 V, VGEN3[3:0] = 1111, IGEN3 = 10 mA, and 25 °C, unless otherwise noted.

Symbol Parameter Min. Typ. Max. Unit Notes

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86 NXP Semiconductors

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

VGEN4 DC (continued)

VGEN4LIR

Line regulation (VGEN4 at 3.6 V) - (VGEN4 at VIN2MIN)For any 0.0 mA < IGEN4 < 350 mA

– 0.80 – mV/mA

IGEN4LIMCurrent limit

IGEN4 when VGEN4 is forced to VGEN4NOM/2435 584.5 700 mA

IGEN4OCP

Overcurrent protection threshold IGEN4 required to cause the SCP function to disable LDO when REGSCPEN = 1

420 – 700 mA

IGEN4Q

Quiescent currentNo load, change in IVIN and IVIN2When VGEN4 enabled

– 13 – μA

VGEN4 AC and transient

PSRRVGEN4

PSRR• IGEN4 = 262.5 mA, 20 Hz to 20 kHz

VGEN4[3:0] = 0000 - 1110, VIN2 = VIN2MIN + 100 mVVGEN4[3:0] = 0000 - 1000, VIN2 = VGEN4NOM + 1.0 V

3555

4060

––

dB (68)

NOISEVGEN4

Output noise density• VIN2 = VIN2MIN, IGEN4 = 262.5 mA

100 Hz – <1.0 kHz1.0 kHz – <10 kHz10 kHz – 1.0 MHz

–––

-114-129-135

-102-123-130

dBV/√Hz

SLWRVGEN4

Turn-on slew rate• 10% to 90% of end value• VIN2MIN ≤ VIN2 ≤ 3.6 V, IGEN4 = 0.0 mA

VGEN4[3:0] = 0000 to 0011VGEN4[3:0] = 0100 to 0111VGEN4[3:0] = 1000 to 1011VGEN4[3:0] = 1100 to 1111

––––

––––

22.026.530.534.5

mV/μs

GEN4tON

Turn-on timeEnable to 90% of end value, VIN2 = VIN2MIN, 3.6 VIGEN4 = 0.0 mA

60 – 500 μs

GEN4tOFF

Turn-off timeDisable to 10% of initial value, VIN2 = VIN2MIN IGEN4 = 0.0 mA

– – 10 ms

GEN4OSHTStart-up overshoot

VIN2 = VIN2MIN, 3.6 V, IGEN4 = 0.0 mA– 1.0 2.0 %

VGEN4LOTR

Transient load responseVIN2 = VIN2MIN, 3.6 VIGEN4 = 35 mA to 350 mA in 1.0 μsPeak of overshoot or undershoot of VGEN4 with respect to final value. Refer to Figure 25

– – 3.0 %

Table 104. VGEN4 electrical characteristics (continued)

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VIN2 = 3.6 V, VGEN4[3:0] = 1111, IGEN4 = 10 mA, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, VIN2 = 3.6 V, VGEN4[3:0] = 1111, IGEN4 = 10 mA, and 25 °C, unless otherwise noted.

Symbol Parameter Min Typ Max Unit Notes

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6.4.6.5.5 VGEN5

VGEN4 AC and transient (continued)

VGEN4LITR

Transient line responseIGEN4 = 262.5 mAVIN2INITIAL = 2.8 V to VIN2FINAL = 3.3 V for VGEN4[3:0] = 0000 to 0111VIN2INITIAL = VGEN4+0.3 V to VIN2FINAL = VGEN4+0.8 V for VGEN4[3:0] = 1000 to 1010VIN2INITIAL = VGEN4+0.25 V to VIN2FINAL = 3.6 V for VGEN4[3:0] = 1011 to 1111Refer to Figure 25

– 5.0 8.0 mV

Notes67. When the LDO output voltage is set above 2.6 V, the minimum allowed input voltage need to be at least the output voltage plus 0.25 V for proper

regulation due to the dropout voltage generated through the internal LDO transistor.68. The PSRR of the regulators is measured with the perturbing signal at the input of the regulator. The power management IC is supplied separately

from the input of the regulator and does not contain the perturbed signal. During measurements, care must be taken not to operate in the dropout region of the regulator under test. VIN2MIN refers to the minimum allowed input voltage for a particular output voltage.

Table 105. VGEN5 electrical characteristics

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VIN3 = 3.6 V, VGEN5[3:0] = 1111, IGEN5 = 10 mA, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, VIN3 = 3.6 V, VGEN5[3:0] = 1111, IGEN5 = 10 mA, and 25 °C, unless otherwise noted.

Symbol Parameter Min Typ Max Unit Notes

VGEN5

VIN3

Operating input voltage1.8 V ≤ VGEN5NOM ≤ 2.5 V2.6 V ≤ VGEN5NOM ≤ 3.3 V

2.8VGEN5NO

M+ 0.250

––

4.54.5

V(69)

VGEN5NOM Nominal output voltage – Table 92 – V

IGEN5 Operating load current 0.0 – 100 mA

VGEN5 active mode – DC

VGEN5TOL

Output voltage tolerance VIN3MIN < VIN3 < 4.5 V 0.0 mA < IGEN5 < 100 mAVGEN5[3:0] = 0000 to 1111

-3.0 – 3.0 %

VGEN5LOR

Load regulation(VGEN5 at IGEN5 = 100 mA) - (VGEN5 at IGEN5 = 0.0 mA)For any VIN3MIN < VIN3 < 4.5 mV

– 0.10 – mV/mA

VGEN5LIR

Line regulation(VGEN5 at VIN3 = 4.5 V) - (VGEN5 at VIN3MIN)For any 0.0 mA < IGEN5 < 100 mA

– 0.50 – mV/mA

IGEN5LIMCurrent limit

IGEN5 when VGEN5 is forced to VGEN5NOM/2122 167 200 mA

IGEN5OCP

Overcurrent protection threshold IGEN5 required to cause the SCP function to disable LDO when REGSCPEN = 1

120 – 200 mA

Table 104. VGEN4 electrical characteristics (continued)

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VIN2 = 3.6 V, VGEN4[3:0] = 1111, IGEN4 = 10 mA, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, VIN2 = 3.6 V, VGEN4[3:0] = 1111, IGEN4 = 10 mA, and 25 °C, unless otherwise noted.

Symbol Parameter Min Typ Max Unit Notes

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

VGEN5 active mode – DC (continued)

IGEN5Q

Quiescent currentNo load, change in IVIN and IVIN3When VGEN5 enabled

– 13 – μA

VGEN5 AC and transient

PSRRVGEN5

PSRR• IGEN5 = 75 mA, 20 Hz to 20 kHz

VGEN5[3:0] = 0000 - 1111, VIN3 = VIN3MIN + 100 mVVGEN5[3:0] = 0000 - 1111, VIN3 = VGEN5NOM + 1.0 V

3552

4060

––

dB (70)

NOISEVGEN5

Output noise density• VIN3 = VIN3MIN, IGEN5 = 75 mA

100 Hz – <1.0 kHz1.0 kHz – <10 kHz10 kHz – 1.0 MHz

–––

-114-129-135

-102-123-130

dBV/√Hz

SLWRVGEN5

Turn-on slew rate• 10% to 90% of end value• VIN3MIN ≤ VIN3 ≤ 4.5 mV, IGEN5 = 0.0 mA

VGEN5[3:0] = 0000 to 0011VGEN5[3:0] = 0100 to 0111VGEN5[3:0] = 1000 to 1011VGEN5[3:0] = 1100 to 1111

––––

––––

22.026.530.534.5

mV/μs

GEN5tON

Turn-on timeEnable to 90% of end value, VIN3 = VIN3MIN, 4.5 VIGEN5 = 0.0 mA

60 – 500 μs

GEN5tOFF

Turn-off timeDisable to 10% of initial value, VIN3 = VIN3MIN IGEN5 = 0.0 mA

– – 10 ms

GEN5OSHTStart-up overshoot

VIN3 = VIN3MIN, 4.5 V, IGEN5 = 0.0 mA– 1.0 2.0 %

VGEN5LOTR

Transient load responseVIN3 = VIN3MIN, 4.5 VIGEN5 = 10 to 100 mA in 1.0 μsPeak of overshoot or undershoot of VGEN5 with respect to final value.Refer to Figure 25

– – 3.0 %

VGEN5LITR

Transient line responseIGEN5 = 75 mA VIN3INITIAL = 2.8 V to VIN3FINAL = 3.3 V for VGEN5[3:0] = 0000 to 0111VIN3INITIAL = VGEN5+0.3 V to VIN3FINAL = VGEN5+0.8 V for VGEN5[3:0] = 1000 to 1111Refer to Figure 25

- 5.0 8.0 mV

Notes69. When the LDO output voltage is set above 2.6 V, the minimum allowed input voltage need to be at least the output voltage plus 0.25 V for proper

regulation due to the dropout voltage generated through the internal LDO transistor.70. The PSRR of the regulators is measured with the perturbing signal at the input of the regulator. The power management IC is supplied separately

from the input of the regulator and does not contain the perturbed signal. During measurements, care must be taken not to operate in the dropout region of the regulator under test. VIN3MIN refers to the minimum allowed input voltage for a particular output voltage.

Table 105. VGEN5 electrical characteristics (continued)

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VIN3 = 3.6 V, VGEN5[3:0] = 1111, IGEN5 = 10 mA, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, VIN3 = 3.6 V, VGEN5[3:0] = 1111, IGEN5 = 10 mA, and 25 °C, unless otherwise noted.

Symbol Parameter Min Typ Max Unit Notes

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NXP Semiconductors 89

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

6.4.6.5.6 VGEN6

Table 106. VGEN6 electrical characteristics

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VIN3 = 3.6 V, VGEN6[3:0] = 1111, IGEN6 = 10 mA, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, VIN3 = 3.6 V, VGEN6[3:0] = 1111, IGEN6 = 10 mA, and 25 °C, unless otherwise noted.

Symbol Parameter Min Typ Max Unit Notes

VGEN6

VIN3

Operating input voltage 1.8 V ≤ VGEN6NOM ≤ 2.5 V2.6 V ≤ VGEN6NOM ≤ 3.3 V

2.8VGEN6NO

M+ 0.250

––

4.5 4.5

V

(71)

VGEN6NOM Nominal output voltage – Table 92 – V

IGEN6 Operating load current 0.0 – 200 mA

VGEN6 DC

VGEN6TOL

Output voltage tolerance VIN3MIN < VIN3 < 4.5 V 0.0 mA < IGEN6 < 200 mAVGEN6[3:0] = 0000 to 1111

-3.0 – 3.0 %

VGEN6LOR

Load regulation (VGEN6 at IGEN6 = 200 mA) - (VGEN6 at IGEN6 = 0.0 mA)For any VIN3MIN < VIN3 < 4.5 V

– 0.10 – mV/mA

VGEN6LIR

Line regulation (VGEN6 at VIN3 = 4.5 V) - (VGEN6 at VIN3MIN)For any 0.0 mA < IGEN6 < 200 mA

– 0.50 – mV/mA

IGEN6LIM

Current limitIGEN6 when VGEN6 is forced to VGEN6NOM/2PF0100ZPF0100AZ

232232

333333

400475

mA

IGEN6OCP

Overcurrent protection threshold IGEN6 required to cause the SCP function to disable LDO when REGSCPEN = 1PF0100ZPF0100AZ

220220

––

400475

mA

IGEN6Q

Quiescent currentNo load, change in IVIN and IVIN3When VGEN6 enabled

– 13 – μA

VGEN6 AC and transient

PSRRVGEN6

PSRR• IGEN6 = 150 mA, 20 Hz to 20 kHz

VGEN6[3:0] = 0000 - 1111, VIN3 = VIN3MIN + 100 mVVGEN6[3:0] = 0000 - 1111, VIN3 = VGEN6NOM + 1.0 V

3552

4060

––

dB (72)

NOISEVGEN6

Output noise density• VIN3 = VIN3MIN, IGEN6 = 150 mA

100 Hz – <1.0 kHz1.0 kHz – <10 kHz10 kHz – 1.0 MHz

–––

-114-129-135

-102-123-130

dBV/√Hz

SLWRVGEN6

Turn-on slew rate• 10% to 90% of end value• VIN3MIN ≤ VIN3 ≤ 4.5 V. IGEN6 = 0.0 mA

VGEN6[3:0] = 0000 to 0011VGEN6[3:0] = 0100 to 0111VGEN6[3:0] = 1000 to 1011VGEN6[3:0] = 1100 to 1111

––––

––––

22.026.530.534.5

mV/μs

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6.4.7 VSNVS LDO/switchVSNVS powers the low-power, SNVS/RTC domain on the processor. It derives its power from either VIN, or coin cell, and cannot be disabled. When powered by both, VIN takes precedence when above the appropriate comparator threshold. When powered by VIN, VSNVS is an LDO capable of supplying seven voltages: 3.0, 1.8, 1.5, 1.3, 1.2, 1.1, and 1.0 V. The bits VSNVSVOLT[2:0] in register VSNVS_CONTROL determine the output voltage. When powered by coin cell, VSNVS is an LDO capable of supplying 1.8, 1.5, 1.3, 1.2, 1.1, or 1.0 V as shown in Table 107. If the 3.0 V option is chosen with the coin cell, VSNVS tracks the coin cell voltage by means of a switch, whose maximum resistance is 100 Ω. In this case, the VSNVS voltage is simply the coin cell voltage minus the voltage drop across the switch, which is 40 mV at a rated maximum load current of 400 μA.

The default setting of the VSNVSVOLT[2:0] is 110, or 3.0 V, unless programmed otherwise in OTP. However, when the coin cell is applied for the very first time, VSNVS outputs 1.0 V. Only when VIN is applied thereafter, VSNVS transitions to its default, or the programmed value if different. Upon subsequent removal of VIN, with the coin cell attached, VSNVS changes configuration from an LDO to a switch for the “110” setting, and remains as an LDO for the other settings, continuing to output the same voltages as when VIN is applied, providing certain conditions are met as described in Table 107.

VGEN6 AC and transient (continued)

GEN6tON

Turn-on timeEnable to 90% of end value, VIN3 = VIN3MIN, 4.5 VIGEN6 = 0.0 mA

60 – 500 μs

GEN6tOFF

Turn-off timeDisable to 10% of initial value, VIN3 = VIN3MIN IGEN6 = 0.0 mA

– – 10 ms

GEN6OSHTStart-up overshoot

VIN3 = VIN3MIN, 4.5 V, IGEN6 = 0 mA– 1.0 2.0 %

VGEN6LOTR

Transient load responseVIN3 = VIN3MIN, 4.5 VIGEN6 = 20 to 200 mA in 1.0 μsPeak of overshoot or undershoot of VGEN6 with respect to final value. Refer to Figure 25

– – 3.0 %

VGEN6LITR

Transient line responseIGEN6 = 150 mAVIN3INITIAL = 2.8 V to VIN3FINAL = 3.3 V for VGEN6[3:0] = 0000 to 0111VIN3INITIAL = VGEN6+0.3 V to VIN3FINAL = VGEN6+0.8 V for VGEN6[3:0] = 1000 to 1111Refer to Figure 25

– 5.0 8.0 mV

Notes71. When the LDO output voltage is set above 2.6 V, the minimum allowed input voltage needs to be at least the output voltage plus 0.25 V for proper

regulation due to the dropout voltage generated through the internal LDO transistor.72. The PSRR of the regulators is measured with the perturbing signal at the input of the regulator. The power management IC is supplied separately

from the input of the regulator and does not contain the perturbed signal. During measurements, care must be taken not to operate in the dropout region of the regulator under test. VIN3MIN refers to the minimum allowed input voltage for a particular output voltage.

Table 106. VGEN6 electrical characteristics (continued)

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VIN3 = 3.6 V, VGEN6[3:0] = 1111, IGEN6 = 10 mA, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, VIN3 = 3.6 V, VGEN6[3:0] = 1111, IGEN6 = 10 mA, and 25 °C, unless otherwise noted.

Symbol Parameter Min Typ Max Unit Notes

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Figure 26. VSNVS supply switch architecture

Table 107 provides a summary of the VSNVS operation at a different VIN input voltage and with or without coin cell connected to the system.

6.4.7.0.1 VSNVS control

The VSNVS output level is configured through the VSNVSVOLT[2:0]bits on VSNVSCTL register as shown in table Table 108.

6.4.7.0.2 VSNVS external components

Table 107. VSNVS modes of operation

VSNVSVOLT[2:0] VIN Mode

110 > VTH1 VIN LDO 3.0 V

110 < VTL1 Coin cell switch

000 – 101 > VTH0 VIN LDO

000 – 101 < VTL0 Coin cell LDO

Table 108. Register VSNVSCTL - ADDR 0x6B

Name Bit # R/W Default Description

VSNVSVOLT 2:0 R/W 0x80

Configures VSNVS output voltage.(73)

000 = 1.0 V001 = 1.1 V010 = 1.2 V011 = 1.3 V100 = 1.5 V101 = 1.8 V110 = 3.0 V111 = RSVD

UNUSED 7:3 – 0x00 unused

Notes73. Only valid when a valid input voltage is present.

Table 109. VSNVS external components

Capacitor Value (μF)

VSNVS 0.47

LDO\

PF0100Z

VSNVSCoin Cell1.8 - 3.3 V

VIN2.25 V (VTL0) -

4.5 V

LICELLCharger

LDO/SWITCH

VREF

+

_

Z

InputSense/Selector

I2C Interface

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6.4.7.0.3 VSNVS specifications

Table 110. VSNVS electrical characteristics

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VSNVS = 3.0 V, ISNVS = 5.0 μA, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, VSNVS = 3.0 V, ISNVS = 5.0 μA, and 25 °C, unless otherwise noted.

Symbol Parameter Min Typ Max Unit Notes

VSNVS

VINSNVS

Operating input voltage Valid coin cell range Valid VIN

1.82.25

––

3.34.5

V

ISNVSOperating load current

VINMIN < VIN < VINMAX5.0 – 400 μA

VSNVS DC, LDO

VSNVS

Output voltage • 5.0 μA < ISNVS < 400 μA (off)

3.20 V < VIN < 4.5 V, VSNVSVOLT[2:0] = 110VTL0/VTH < VIN < 4.5 V, VSNVSVOLT[2:0] = [000] - [101]

• 5.0μA < ISNVS < 400 μA (on)

3.20 V < VIN < 4.5 V, VSNVSVOLT[2:0] = 110UVDET < VIN < 4.5 V, VSNVSVOLT[2:0] = [000] - [101]

• 5.0 μA < ISNVS < 400 μA (coin cell mode) 2.84 V < VCOIN < 3.3 V, VSNVSVOLT[2:0] = 1101.8 V < VCOIN < 3.3 V, VSNVSVOLT[2:0] = [000] - [101]

-5.0%-8.0%

-5.0%-4.0%

VCOIN-0.04-8.0%

3.0 1.0 - 1.8

3.01.0 - 1.8

–1.0 - 1.8

7.0%7.0%

5.0%4.0%

VCOIN7.0%

V

(77)

VSNVSDROP

Dropout voltage2.85 V < VIN < 2.9 V, VSNVSVOLT[2:0] = 1105.0 μA < ISNVS < 400 μA

– – 50 mV

ISNVSLIM

Current limitPF0100ZVIN > VTH1, VSNVSVOLT[2:0] = 110VIN > VTL0, VSNVSVOLT[2:0] = 000 to 101VIN < VTL0, VSNVSVOLT[2:0] = 000 to 101PF0100AZVIN > VTH1, VSNVSVOLT[2:0] = 110VIN > VTL0, VSNVSVOLT[2:0] = 000 to 101VIN < VTL0, VSNVSVOLT[2:0] = 000 to 101

750500480

1100500480

–––

–––

590059003600

675067504500

μA

VTH0

VIN threshold (coin cell powered to VIN powered) VIN going high with valid coin cell

VSNVSVOLT[2:0] = 000, 001, 010, 011, 100, 101 2.25 2.40 2.55V

VTL0

VIN threshold (VIN powered to coin cell powered) VIN going low with valid coin cell

VSNVSVOLT[2:0] = 000, 001, 010, 011, 100, 101 2.20 2.35 2.50V

VHYST1 VIN threshold hysteresis for VTH1-VTL1 5.0 – – mV

VHYST0 VIN threshold hysteresis for VTH0-VTL0 5.0 – – mV

VSNVSCROSS

Output voltage during crossover VSNVSVOLT[2:0] = 110VCOIN > 2.9 VSwitch to LDO: VIN > 2.825 V, ISNVS = 100 μALDO to Switch: VIN < 3.05 V, ISNVS = 100 μA

2.7 – – V (74)

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6.4.7.1 Coin cell battery backup

The LICELL pin provides for a connection of a coin cell backup battery or a “super” capacitor. If the voltage at VIN goes below the VINthreshold (VTL1 and VTL0), contact-bounced, or removed, the coin cell maintained logic is powered by the voltage applied to LICELL. The supply for internal logic and the VSNVS rail switch over to the LICELL pin when VIN goes below VTL1 or VTL0, even in the absence of a voltage at the LICELL pin, resulting in clearing of memory and turning off VSNVS. Applications concerned about this behavior can tie the LICELL pin to any system voltage between 1.8 V and 3.0 V. A small capacitor should be placed from LICELL to ground under all circumstances.

VSNVS AC and transient

tONSNVS

Turn-on time (load capacitor, 0.47 μF)VIN = UVDET to 90% of VSNVSVCOIN = 0.0 V, ISNVS = 5.0 μAVSNVSVOLT[2:0] = 000 to 110

– – 24 ms (75), (76)

VSNVSOSH

Start-up overshootVSNVSVOLT[2:0] = 000 to 110ISNVS = 5.0 μAdVIN/dt = 50 mV/μs

– 40 70 mV

VSNVSLITR

Transient line response ISNVS = 75% of ISNVSMAX3.2 V < VIN < 4.5 V, VSNVSVOLT[2:0] = 1102.45 V < VIN < 4.5 V, VSNVSVOLT[2:0] = [000] - [101]

––

3222

––

mV

VSNVSLOTR

Transient load responseVSNVSVOLT[2:0] = 1103.1 V (UVDETL)< VIN ≤ 4.5 VISNVS = 75 to 750 μA

VSNVSVOLT[2:0] = 000 to 1012.45 V < VIN ≤ 4.5 VVTL0 > VIN, 1.8 V ≤ VCOIN ≤ 3.3 VISNVS = 40 μA to 400 μARefer to Figure 25

2.8

1.0

2.0

V

%

VSNVS DC, switch

VINSNVSOperating input voltage

Valid coin cell range1.8 – 3.3 V

ISNVS Operating load current 5.0 – 400 μA

RDSONSNVSInternal switch RDS(on)

VCOIN = 2.6 V– – 100 W

VTL1VIN threshold (VIN powered to coin cell powered)

VSNVSVOLT[2:0] = 110 2.725 2.90 3.00 V(74)

VTH1VIN threshold (coin cell powered to VIN powered)

VSNVSVOLT[2:0] = 110 2.775 2.95 3.1 V

Notes74. During crossover from VIN to LICELL, the VSNVS output voltage may drop to 2.7 V before going to the LICELL voltage. Though this is outside

the specified DC voltage level for the VDD_SNVS_IN pin of the i.MX 6, this momentary drop does not cause a malfunction. The i.MX 6’s RTC continues to operate through the transition, and as a worst case may switch to the internal RC oscillator for a few clock cycles before switching back to the external crystal oscillator.

75. The start-up of VSNVS is not monotonic. It first rises to 1.0 V and then settles to its programmed value within the specified tr1 time.

76. From coin cell insertion to VSNVS = 1.0 V, the delay time is typically 400 ms.77. For 1.8 V ISNVS limited to 100 μA for VCOIN < 2.1 V

Table 110. VSNVS electrical characteristics (continued)

All parameters are specified at PF0100Z TA = -40 °C to 85 °C, PF0100AZ TA = -40 °C to 105 °C, VIN = 3.6 V, VSNVS = 3.0 V, ISNVS = 5.0 μA, typical external component values, unless otherwise noted. Typical values are characterized at VIN = 3.6 V, VSNVS = 3.0 V, ISNVS = 5.0 μA, and 25 °C, unless otherwise noted.

Symbol Parameter Min Typ Max Unit Notes

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6.4.7.1.1 Coin cell charger control

The coin cell charger circuit functions as a current-limited voltage source, resulting in the CC/CV taper characteristic typically used for rechargeable Lithium-Ion batteries. The coin cell charger is enabled via the COINCHEN bit, while the coin cell voltage is programmable through the VCOIN[2:0] bits on register COINCTL in Table 112. The coin cell charger voltage is programmable. In the on state, the charger current is fixed at ICOINHI. In sleep and standby modes, the charger current is reduced to a typical 10 μA. In the off state, coin cell charging is not available as the main battery could be depleted unnecessarily. The coin cell charging is stopped when VIN is below UVDET.

6.4.7.1.2 External components

6.4.7.1.3 Coin cell specifications

Table 111. Coin cell charger voltage

VCOIN[2:0] VCOIN (V)(78)

000 2.50

001 2.70

010 2.80

011 2.90

100 3.00

101 3.10

110 3.20

111 3.30

Notes78. Coin cell voltages selected based on the

type of LICELL used on the system.

Table 112. Register COINCTL - ADDR 0x1A

Name Bit # R/W Default Description

VCOIN 2:0 R/W 0x00Coin cell charger output voltage selection.See Table 111 for all options selectable through these bits.

COINCHEN 3 R/W 0x00 Enable or disable the coin cell charger

UNUSED 7:4 – 0x00 unused

Table 113. Coin cell charger external components

Component Value Units

LICELL bypass capacitor 100 nF

Table 114. Coin cell charger specifications

Parameter Typ Unit

Voltage accuracy 100 mV

Coin cell charge current in on mode ICOINHI 60 μA

Current accuracy 30 %

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6.5 Control interface I2C block description

The PF0100Z contains an I2C interface port which allows access by a processor, or any I2C master, to the register set. Via these registers the resources of the IC can be controlled. The registers also provide status information about how the IC is operating. The SCL and SDA lines should be routed away from noisy signals and planes to minimize noise pick up. To prevent reflections in the SCL and SDA traces from creating false pulses, the rise and fall times of the SCL and SDA signals must be greater than 20 ns. This can be accomplished by reducing the drive strength of the I2C master, via software. The i.MX6 I2C driver defaults to a 40 Ω drive strength. It is recommended to use a drive strength of 80 Ω or higher to increase the edge times. Alternatively, this can be accomplished by using small capacitors from SCL and SDA to ground. For example, use 5.1 pF capacitors from SCL and SDA to ground for bus pull-up resistors of 4.8 kΩ.

6.5.1 I2C device IDI2C interface protocol requires a device ID for addressing the target IC on a multi-device bus. To allow flexibility in addressing for bus conflict avoidance, fuse programmability is provided to allow configuration for the lower 3 address LSB(s). Refer to 6.1.2 One time programmability (OTP), page 20 for more details. This product supports 7-bit addressing only; support is not provided for 10-bit or general call addressing. Note, when the TBB bits for the I2C slave address are written, the next access to the chip, must then use the new slave address; these bits take affect right away.

6.5.2 I2C operationThe I2C mode of the interface is implemented generally following the fast mode definition which supports up to 400 kbits/s operation (exceptions to the standard are noted to be 7-bit only addressing and no support for General Call addressing.) Timing diagrams, electrical specifications, and further details can be found in the I2C specification, which is available for download at:

http://www.nxp.com/acrobat_download/literature/9398/39340011.pdf

I2C read operations are also performed in byte increments separated by an ACK. Read operations also begin with the MSB and each byte will be sent out unless a STOP command or NACK is received prior to completion.

The following examples show how to write and read data to and from the IC. The host initiates and terminates all communication. The host sends a master command packet after driving the start condition. The device responds to the host if the master command packet contains the corresponding slave address. In the following examples, the device is shown always responding with an ACK to transmissions from the host. If at any time a NACK is received, the host should terminate the current transaction and retry the transaction.

Figure 27. I2C write example

Figure 28. I2C read example

Device

AddressRegister Address

Packet Type

START

R / W Host SDA

ACK

Slave SDA ACK

Master Driven Data

( byte 0 )

07

STOP

Host can also drive another Start instead of Stop

AC K

0

07 07

Device Address

Register Address Device AddressPacket Type

START 0

R/W

1623 815

07ACK

STOP

ACK

ACK

START

07

R/W

NACK

PMIC Driven Data

Host can also drive another Start instead of Stop

1Host SDA

Slave SDA

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6.5.3 Interrupt handlingThe system is informed about important events based on interrupts. Unmasked interrupt events are signaled to the processor by driving the INTB pin low.

Each interrupt is latched so even if the interrupt source becomes inactive, the interrupt remains set until cleared. Each interrupt can be cleared by writing a “1” to the appropriate bit in the interrupt status register; this also causes the INTB pin to go high. If there are multiple interrupt bits set the INTB pin remains low until all are either masked or cleared. If a new interrupt occurs while the processor clears an existing interrupt bit, the INTB pin remains low.

Each interrupt can be masked by setting the corresponding mask bit to a 1. As a result, when a masked interrupt bit goes high, the INTB pin does not go low. A masked interrupt can still be read from the interrupt status register. This gives the processor the option of polling for status from the IC. The IC powers up with all interrupts masked, so the processor must initially poll the device to determine if any interrupts are active. Alternatively, the processor can unmask the interrupt bits of interest. If a masked interrupt bit was already high, the INTB pin goes low after unmasking.

The sense registers contain status and input sense bits so the system processor can poll the current state of interrupt sources. They are read only, and not latched or clearable.

Interrupts generated by external events are debounced; therefore, the event needs to be stable throughout the debounce period before an interrupt is generated. Nominal debounce periods for each event are documented in the INT summary Table 115. Due to the asynchronous nature of the debounce timer, the effective debounce time can vary slightly.

6.5.4 Interrupt bit summaryTable 115 summarizes all interrupt, mask, and sense bits associated with INTB control. For more detailed behavioral descriptions, refer to the related chapters.

Table 115. Interrupt, Mask and Sense Bits

Interrupt Mask Sense Purpose Trigger Debounce time (ms)

LOWVINI LOWVINM LOWVINSLow input voltage detectSense is 1 if below 2.80 V threshold

H to L 3.9(79)

PWRONI PWRONM PWRONSPower on button event H to L 31.25(79)

Sense is 1 if PWRON is high. L to H 31.25

THERM110 THERM110M THERM110SThermal 110 °C thresholdSense is 1 if above threshold

Dual 3.9

THERM120 THERM120M THERM120SThermal 120 °C thresholdSense is 1 if above threshold

Dual 3.9

THERM125 THERM125M THERM125SThermal 125 °C thresholdSense is 1 if above threshold

Dual 3.9

THERM130 THERM130M THERM130SThermal 130 °C thresholdSense is 1 if above threshold

Dual 3.9

SW1AFAULTI SW1AFAULTM SW1AFAULTSRegulator 1A overcurrent limitSense is 1 if above current limit

L to H 8.0

SW1BFAULTI SW1BFAULTM SW1BFAULTSRegulator 1B overcurrent limitSense is 1 if above current limit

L to H 8.0

SW1CFAULTI SW1CFAULTM SW1CFAULTSRegulator 1C overcurrent limitSense is 1 if above current limit

L to H 8.0

SW2FAULTI SW2FAULTM SW2FAULTSRegulator 2 overcurrent limitSense is 1 if above current limit

L to H 8.0

SW3AFAULTI SW3AFAULTM SW3AFAULTSRegulator 3A overcurrent limitSense is 1 if above current limit

L to H 8.0

SW3BFAULTI SW3BFAULTM SW3BFAULTSRegulator 3B overcurrent limitSense is 1 if above current limit

L to H 8.0

SW4FAULTI SW4FAULTM SW4FAULTSRegulator 4 overcurrent limitSense is 1 if above current limit

L to H 8.0

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A full description of all interrupt, mask, and sense registers is provided in Tables 116 to 127.

SWBSTFAULTI SWBSTFAULTM SWBSTFAULTSSWBST overcurrent limitSense is 1 if above current limit

L to H 8.0

VGEN1FAULTI VGEN1FAULTM VGEN1FAULTSVGEN1 overcurrent limitSense is 1 if above current limit

L to H 8.0

VGEN2FAULTI VGEN2FAULTM VGEN2FAULTSVGEN2 overcurrent limitSense is 1 if above current limit

L to H 8.0

VGEN3FAULTI VGEN3FAULTM VGEN3FAULTSVGEN3 overcurrent limitSense is 1 if above current limit

L to H 8.0

VGEN4FAULTI VGEN4FAULTM VGEN4FAULTSVGEN4 overcurrent limitSense is 1 if above current limit

L to H 8.0

VGEN5FAULTI VGEN5FAULTM VGEN1FAULTSVGEN5 overcurrent limitSense is 1 if above current limit

L to H 8.0

VGEN6FAULTI VGEN6FAULTM VGEN6FAULTSVGEN6 overcurrent limitSense is 1 if above current limit

L to H 8.0

OTP_ECCI OTP_ECCM OTP_ECCS1 or 2 bit error detected in OTP registersSense is 1 if error detected

L to H 8.0

Notes79. Debounce timing for the falling edge can be extended with PWRONDBNC[1:0].

Table 116. Register INTSTAT0 - ADDR 0x05

Name Bit # R/W Default Description

PWRONI 0 R/W1C 0 Power on interrupt bit

LOWVINI 1 R/W1C 0 Low-voltage interrupt bit

THERM110I 2 R/W1C 0 110 °C thermal interrupt bit

THERM120I 3 R/W1C 0 120 °C thermal interrupt bit

THERM125I 4 R/W1C 0 125 °C thermal interrupt bit

THERM130I 5 R/W1C 0 130 °C thermal interrupt bit

UNUSED 7:6 – 00 unused

Table 117. Register INTMASK0 - ADDR 0x06

Name Bit # R/W Default Description

PWRONM 0 R/W1C 1 Power on interrupt mask bit

LOWVINM 1 R/W1C 1 Low-voltage interrupt mask bit

THERM110M 2 R/W1C 1 110 °C thermal interrupt mask bit

THERM120M 3 R/W1C 1 120 °C thermal interrupt mask bit

THERM125M 4 R/W1C 1 125 °C thermal interrupt mask bit

THERM130M 5 R/W1C 1 130 °C thermal interrupt mask bit

UNUSED 7:6 – 00 unused

Table 115. Interrupt, Mask and Sense Bits (continued)

Interrupt Mask Sense Purpose Trigger Debounce time (ms)

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Table 118. Register INTSENSE0 - ADDR 0x07

Name Bit # R/W Default Description

PWRONS 0 R 0Power on sense bit

0 = PWRON low1 = PWRON high

LOWVINS 1 R 0Low-voltage sense bit

0 = VIN > 2.8 V1 = VIN ≤ 2.8 V

THERM110S 2 R 0110 °C thermal sense bit

0 = Below threshold1 = Above threshold

THERM120S 3 R 0120 °C thermal sense bit

0 = Below threshold1 = Above threshold

THERM125S 4 R 0125 °C thermal sense bit

0 = Below threshold1 = Above threshold

THERM130S 5 R 0130 °C thermal sense bit

0 = Below threshold1 = Above threshold

UNUSED 6 – 0 unused

VDDOTPS 7 R 00Additional VDDOTP voltage sense pin

0 = VDDOTP grounded1 = VDDOTP to VCOREDIG or greater

Table 119. Register INTSTAT1 - ADDR 0x08

Name Bit # R/W Default Description

SW1AFAULTI 0 R/W1C 0 SW1A overcurrent interrupt bit

SW1BFAULTI 1 R/W1C 0 SW1B overcurrent interrupt bit

SW1CFAULTI 2 R/W1C 0 SW1C overcurrent interrupt bit

SW2FAULTI 3 R/W1C 0 SW2 overcurrent interrupt bit

SW3AFAULTI 4 R/W1C 0 SW3A overcurrent interrupt bit

SW3BFAULTI 5 R/W1C 0 SW3B overcurrent interrupt bit

SW4FAULTI 6 R/W1C 0 SW4 overcurrent interrupt bit

UNUSED 7 – 0 unused

Table 120. Register INTMASK1 - ADDR 0x09

Name Bit # R/W Default Description

SW1AFAULTM 0 R/W 1 SW1A overcurrent interrupt mask bit

SW1BFAULTM 1 R/W 1 SW1B overcurrent interrupt mask bit

SW1CFAULTM 2 R/W 1 SW1C overcurrent interrupt mask bit

SW2FAULTM 3 R/W 1 SW2 overcurrent interrupt mask bit

SW3AFAULTM 4 R/W 1 SW3A overcurrent interrupt mask bit

SW3BFAULTM 5 R/W 1 SW3B overcurrent interrupt mask bit

SW4FAULTM 6 R/W 1 SW4 overcurrent interrupt mask bit

UNUSED 7 – 0 unused

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Table 121. Register INTSENSE1 - ADDR 0x0A

Name Bit # R/W Default Description

SW1AFAULTS 0 R 0SW1A overcurrent sense bit

0 = Normal operation1 = Above current limit

SW1BFAULTS 1 R 0SW1B overcurrent sense bit

0 = Normal operation1 = Above current limit

SW1CFAULTS 2 R 0SW1C overcurrent sense bit

0 = Normal operation1 = Above current limit

SW2FAULTS 3 R 0SW2 overcurrent sense bit

0 = Normal operation1 = Above current limit

SW3AFAULTS 4 R 0SW3A overcurrent sense bit

0 = Normal operation1 = Above current limit

SW3BFAULTS 5 R 0SW3B overcurrent sense bit

0 = Normal operation1 = Above current limit

SW4FAULTS 6 R 0SW4 overcurrent sense bit

0 = Normal operation1 = Above current limit

UNUSED 7 – 0 unused

Table 122. Register INTSTAT3 - ADDR 0x0E

Name Bit # R/W Default Description

SWBSTFAULTI 0 R/W1C 0 SWBST overcurrent limit interrupt bit

UNUSED 6:1 – 0x00 unused

OTP_ECCI 7 R/W1C 0 OTP error interrupt bit

Table 123. Register INTMASK3 - ADDR 0x0F

Name Bit # R/W Default Description

SWBSTFAULTM 0 R/W 1 SWBST overcurrent limit interrupt mask bit

UNUSED 6:1 – 0x00 unused

OTP_ECCM 7 R/W 1 OTP error interrupt mask bit

Table 124. Register INTSENSE3 - ADDR 0x10

Name Bit # R/W Default Description

SWBSTFAULTS 0 R 0SWBST overcurrent limit sense bit

0 = Normal operation1 = Above current limit

UNUSED 6:1 – 0x00 unused

OTP_ECCS 7 R 0OTP error sense bit

0 = No error detected1 = OTP error detected

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Table 125. Register INTSTAT4 - ADDR 0x11

Name Bit # R/W Default Description

VGEN1FAULTI 0 R/W1C 0 VGEN1 overcurrent interrupt bit

VGEN2FAULTI 1 R/W1C 0 VGEN2 overcurrent interrupt bit

VGEN3FAULTI 2 R/W1C 0 VGEN3 overcurrent interrupt bit

VGEN4FAULTI 3 R/W1C 0 VGEN4 overcurrent interrupt bit

VGEN5FAULTI 4 R/W1C 0 VGEN5 overcurrent interrupt bit

VGEN6FAULTI 5 R/W1C 0 VGEN6 overcurrent interrupt bit

UNUSED 7:6 – 00 unused

Table 126. Register INTMASK4 - ADDR 0x12

Name Bit # R/W Default Description

VGEN1FAULTM 0 R/W 1 VGEN1 overcurrent interrupt mask bit

VGEN2FAULTM 1 R/W 1 VGEN2 overcurrent interrupt mask bit

VGEN3FAULTM 2 R/W 1 VGEN3 overcurrent interrupt mask bit

VGEN4FAULTM 3 R/W 1 VGEN4 overcurrent interrupt mask bit

VGEN5FAULTM 4 R/W 1 VGEN5 overcurrent interrupt mask bit

VGEN6FAULTM 5 R/W 1 VGEN6 overcurrent interrupt mask bit

UNUSED 7:6 – 00 unused

Table 127. Register INTSENSE4 - ADDR 0x13

Name Bit # R/W Default Description

VGEN1FAULTS 0 R 0VGEN1 overcurrent sense bit

0 = Normal operation1 = Above current limit

VGEN2FAULTS 1 R 0VGEN2 overcurrent sense bit

0 = Normal operation1 = Above current limit

VGEN3FAULTS 2 R 0VGEN3 overcurrent sense bit

0 = Normal operation1 = Above current limit

VGEN4FAULTS 3 R 0VGEN4 overcurrent sense bit

0 = Normal operation1 = Above current limit

VGEN5FAULTS 4 R 0VGEN5 overcurrent sense bit

0 = Normal operation1 = Above current limit

VGEN6FAULTS 5 R 0VGEN6 overcurrent sense bit

0 = Normal operation1 = Above current limit

UNUSED 7:6 – 00 unused

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6.5.5 Specific registers

6.5.5.1 IC and version identification

The IC and other version details can be read via identification bits. These are hard-wired on chip and described in Tables 128 to 130.

6.5.5.2 Embedded memory

There are four register banks of general purpose embedded memory to store critical data. The data written to MEMA[7:0], MEMB[7:0], MEMC[7:0], and MEMD[7:0] is maintained by the coin cell when the main battery is deeply discharged, removed, or contact-bounced. The contents of the embedded memory are reset by COINPORB. The banks can be used for any system need for bit retention with coin cell backup.

Table 128. Register DEVICEID - ADDR 0x00

Name Bit # R/W Default Description

DEVICEID 3:0 R 0x00Die version.

0000 = PF0100

UNUSED 7:4 – 0x01 Unused

Table 129. Register SILICON REV- ADDR 0x03

Name Bit # R/W Default Description

METAL_LAYER_REV 3:0 R 0x00

Represents the metal mask revisionPass 0.0 = 0000..Pass 0.15 = 1111

FULL_LAYER_REV 7:4 R 0x01

Represents the full mask revisionPass 1.0 = 0001..Pass 15.0 = 1111

Table 130. Register FABID - ADDR 0x04

Name Bit # R/W Default Description

FIN 1:0 R 0x00Allows for characterizing different options within the same reticule

FAB 3:2 R 0x00 Represents the wafer manufacturing facility

Unused 7:0 R 0x00 unused

Table 131. Register MEMA ADDR 0x1C

Name Bit # R/W Default Description

MEMA 7:0 R/W 0 Memory bank A

Table 132. Register MEMB ADDR 0x1D

Name Bit # R/W Default Description

MEMB 7:0 R/W 0 Memory bank B

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6.5.6 Register BitmapThe register map is comprised of thirty-two pages, and its address and data fields are each eight bits wide. Only the first two pages can be accessed. On each page, registers 0 to 0x7F are referred to as 'functional', and registers 0x80 to 0xFF as 'extended'. On each page, the functional registers are the same, but the extended registers are different. To access registers in Table 136. Extended page 1, page 106, one must first write 0x01 to the page register at address 0x7F, and to access registers Table 137. Extended page 2, page 110, one must first write 0x02 to the page register at address 0x7F. To access the Table 135. Functional page, page 103 from one of the extended pages, no write to the page register is necessary.

Registers missing in the sequence are reserved; reading from them returns a value 0x00, and writing to them has no effect. The contents of all registers are given in the tables defined in this chapter; each table is structure as follows:

Name: Name of the bit.

Bit #: The bit location in the register (7-0)

R/W: Read / Write access and control

• R is read-only access

• R/W is read and write access

• RW1C is read and write access with write 1 to clear

Reset: Reset signals are color coded based on the following legend.

Default: The value after reset, as noted in the default column of the memory map.

• Fixed defaults are explicitly declared as 0 or 1.

• “X” corresponds to Read / Write bits initialized at start-up, based on the OTP fuse settings or default if VDDOTP = 1.5 V. Bits are subsequently I2C modifiable, when their reset has been released. “X” may also refer to bits which may have other dependencies. For example, some bits may depend on the version of the IC, or a value from an analog block, for instance the sense bits for the interrupts.

Table 133. Register MEMC ADDR 0x1E

Name Bit # R/W Default Description

MEMC 7:0 R/W 0 Memory bank C

Table 134. Register MEMD ADDR 0x1F

Name Bit # R/W Default Description

MEMD 7:0 R/W 0 Memory bank D

Bits reset by SC and VCOREDIG_PORB

Bits reset by PWRON or loaded default or OTP configuration

Bits reset by DIGRESETB

Bits reset by PORB or RESETBMCU

Bits reset by VCOREDIG_PORB

Bits reset by POR or OFFB

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6.5.6.1 Register map

Table 135. Functional page

AddRegister

NameR/W Default

BITS[7:0]

7 6 5 4 3 2 1 0

00 DeviceID R 8'b0001_0000– – – – DEVICE ID [3:0]

0 0 0 1 0 0 0 0

03 SILICONREVID R 8'b0001_0000FULL_LAYER_REV[3:0] METAL_LAYER_REV[3:0]

X X X X X X X X

04 FABID R 8'b0000_0000– – – – FAB[1:0] FIN[1:0]

0 0 0 0 0 0 0 0

05 INTSTAT0 RW1C 8'b0000_0000– – THERM130I THERM125I THERM120I THERM110I LOWVINI PWRONI

0 0 0 0 0 0 0 0

06 INTMASK0 R/W 8'b0011_1111– – THERM130M THERM125M THERM120M THERM110M LOWVINM PWRONM

0 0 1 1 1 1 1 1

07 INTSENSE0 R 8'b00xx_xxxxVDDOTPS RSVD THERM130S THERM125S THERM120S THERM110S LOWVINS PWRONS

0 0 x x x x x x

08 INTSTAT1 RW1C 8'b0000_0000– SW4FAULTI SW3BFAULTI SW3AFAULTI SW2FAULTI SW1CFAULTI SW1BFAULTI SW1AFAULTI

0 0 0 0 0 0 0 0

09 INTMASK1 R/W 8'b0111_1111– SW4FAULTM SW3BFAULTM SW3AFAULTM SW2FAULTM SW1CFAULTM SW1BFAULTM SW1AFAULTM

0 1 1 1 1 1 1 1

0A INTSENSE1 R 8'b0xxx_xxxx– SW4FAULTS SW3BFAULTS SW3AFAULTS SW2FAULTS SW1CFAULTS SW1BFAULTS SW1AFAULTS

0 x x x x x x x

0E INTSTAT3 RW1C 8'b0000_0000OTP_ECCI – – – – – – SWBSTFAULTI

0 0 0 0 0 0 0 0

0F INTMASK3 R/W 8'b1000_0001OTP_ECCM – – – – – – SWBSTFAULTM

1 0 0 0 0 0 0 1

10 INTSENSE3 R 8'b0000_000xOTP_ECCS – – – – – – SWBSTFAULTS

0 0 0 0 0 0 0 x

11 INTSTAT4 RW1C 8'b0000_0000– – VGEN6FAULTI VGEN5FAULTI VGEN4FAULTI VGEN3FAULTI VGEN2FAULTI VGEN1FAULTI

0 0 0 0 0 0 0 0

12 INTMASK4 R/W 8'b0011_1111– –

VGEN6FAULTM

VGEN5FAULTM

VGEN4FAULTM

VGEN3FAULTM

VGEN2FAULTM

VGEN1FAULTM

0 0 1 1 1 1 1 1

13 INTSENSE4 R 8'b00xx_xxxx– –

VGEN6FAULTS

VGEN5FAULTS

VGEN4FAULTS

VGEN3FAULTS

VGEN2FAULTS

VGEN1FAULTS

0 0 x x x x x x

1A COINCTL R/W 8'b0000_0000– – – – COINCHEN VCOIN[2:0]

0 0 0 0 0 0 0 0

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1B PWRCTL R/W 8'b0001_0000REGSCPEN STANDBYINV STBYDLY[1:0] PWRONBDBNC[1:0] PWRONRSTEN RESTARTEN

0 0 0 1 0 0 0 0

1C MEMA R/W 8'b0000_0000MEMA[7:0]

0 0 0 0 0 0 0 0

1D MEMB R/W 8'b0000_0000MEMB[7:0]

0 0 0 0 0 0 0 0

1E MEMC R/W 8'b0000_0000MEMC[7:0]

0 0 0 0 0 0 0 0

1F MEMD R/W 8'b0000_0000MEMD[7:0]

0 0 0 0 0 0 0 0

20 SW1ABVOLT R/W/M 8'b00xx_xxxx– – SW1AB[5:0]

0 0 x x x x x x

21 SW1ABSTBY R/W 8'b00xx_xxxx– – SW1ABSTBY[5:0]

0 0 x x x x x x

22 SW1ABOFF R/W 8'b00xx_xxxx– – SW1ABOFF[5:0]

0 0 x x x x x x

23 SW1ABMODE R/W 8'b0000_1000– – SW1ABOMODE – SW1ABMODE[3:0]

0 0 0 0 1 0 0 0

24 SW1ABCONF R/W 8'bxx00_xx00SW1ABDVSSPEED[1:0] SW1BAPHASE[1:0] SW1ABFREQ[1:0] – SW1ABILIM

x x 0 0 x x 0 0

2E SW1CVOLT R/W 8'b00xx_xxxx– – SW1C[5:0]

0 0 x x x x x x

2F SW1CSTBY R/W 8'b00xx_xxxx– – SW1CSTBY[5:0]

0 0 x x x x x x

30 SW1COFF R/W 8'b00xx_xxxx– – SW1COFF[5:0]

0 0 x x x x x x

31 SW1CMODE R/W 8'b0000_1000– – SW1COMODE – SW1CMODE[3:0]

0 0 0 0 1 0 0 0

32 SW1CCONF R/W 8'bxx00_xx00SW1CDVSSPEED[1:0] SW1CPHASE[1:0] SW1CFREQ[1:0] – SW1CILIM

x x 0 0 x x 0 0

35 SW2VOLT R/W 8'b0xxx_xxxx– SW2[6:0]

0 x x x x x x x

36 SW2STBY R/W 8'b0xxx_xxxx– SW2STBY[6:0]

0 x x x x x x x

37 SW2OFF R/W 8'b0xxx_xxxx– SW2OFF[6:0]

0 x x x x x x x

Table 135. Functional page (continued)

AddRegister

NameR/W Default

BITS[7:0]

7 6 5 4 3 2 1 0

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38 SW2MODE R/W 8'b0000_1000– – SW2OMODE – SW2MODE[3:0]

0 0 0 0 1 0 0 0

39 SW2CONF R/W 8'bxx01_xx00SW2DVSSPEED[1:0] SW2PHASE[1:0] SW2FREQ[1:0] – SW2ILIM

x x 0 1 x x 0 0

3C SW3AVOLT R/W 8'b0xxx_xxxx– SW3A[6:0]

0 x x x x x x x

3D SW3ASTBY R/W 8'b0xxx_xxxx– SW3ASTBY[6:0]

0 x x x x x x x

3E SW3AOFF R/W 8'b0xxx_xxxx– SW3AOFF[6:0]

0 x x x x x x x

3F SW3AMODE R/W 8'b0000_1000SW3AOMODE – SW3AMODE[3:0]

0 0 0 0 1 0 0 0

40 SW3ACONF R/W 8'bxx10_xx00SW3ADVSSPEED[1:0] SW3APHASE[1:0] SW3AFREQ[1:0] – SW3AILIM

x x 1 0 x x 0 0

43 SW3BVOLT R/W 8'b0xxx_xxxx– SW3B[6:0]

0 x x x x x x x

44 SW3BSTBY R/W 8'b0xxx_xxxx– SW3BSTBY[6:0]

0 x x x x x x x

45 SW3BOFF R/W 8'b0xxx_xxxx– SW3BOFF[6:0]

0 x x x x x x x

46 SW3BMODE R/W 8'b0000_1000– – SW3BOMODE – SW3BMODE[3:0]

0 0 0 0 1 0 0 0

47 SW3BCONF R/W 8'bxx10_xx00SW3BDVSSPEED[1:0] SW3BPHASE[1:0] SW3BFREQ[1:0] – SW3BILIM

x x 1 0 x x 0 0

4A SW4VOLT R/W 8'b0xxx_xxxx– SW4[6:0]

0 x x x x x x x

4B SW4STBY R/W 8'b0xxx_xxxx– SW4STBY[6:0]

0 x x x x x x x

4C SW4OFF R/W 8'b0xxx_xxxx– SW4OFF[6:0]

0 x x x x x x x

4D SW4MODE R/W 8'b0000_1000– – SW4OMODE – SW4MODE[3:0]

0 0 0 0 1 0 0 0

4E SW4CONF R/W 8'bxx11_xx00SW4DVSSPEED[1:0] SW4PHASE[1:0] SW4FREQ[1:0] – SW4ILIM

x x 1 1 x x 0 0

Table 135. Functional page (continued)

AddRegister

NameR/W Default

BITS[7:0]

7 6 5 4 3 2 1 0

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66 SWBSTCTL R/W 8'b0xx0_10xx– SWBST1STBYMODE[1:0] – SWBST1MODE[1:0] SWBST1VOLT[1:0]

0 x x 0 1 0 x x

6A VREFDDRCTL R/W 8'b000x_0000– – – VREFDDREN – – – –

0 0 0 x 0 0 0 0

6B VSNVSCTL R/W 8'b0000_0xxx– – – – – VSNVSVOLT[2:0]

0 0 0 0 0 0 x x

6C VGEN1CTL R/W 8'b000x_xxxx– VGEN1LPWR VGEN1STBY VGEN1EN VGEN1[3:0]

0 0 0 x x x x x

6D VGEN2CTL R/W 8'b000x_xxxx– VGEN2LPWR VGEN2STBY VGEN2EN VGEN2[3:0]

0 0 0 x x x x x

6E VGEN3CTL R/W 8'b000x_xxxx– VGEN3LPWR VGEN3STBY VGEN3EN VGEN3[3:0]

0 0 0 x x x x x

6F VGEN4CTL R/W 8'b000x_xxxx– VGEN4LPWR VGEN4STBY VGEN4EN VGEN4[3:0]

0 0 0 x x x x x

70 VGEN5CTL R/W 8'b000x_xxxx– VGEN5LPWR VGEN5STBY VGEN5EN VGEN5[3:0]

0 0 0 x x x x x

71 VGEN6CTL R/W 8'b000x_xxxx– VGEN6LPWR VGEN6STBY VGEN6EN VGEN6[3:0]

0 0 0 x x x x x

7F Page Register R/W 8'b0000_0000– – – PAGE[4:0]

0 0 0 0 0 0 0 0

Table 136. Extended page 1

Address Register Name TYPE DefaultBITS[7:0]

7 6 5 4 3 2 1 0

80OTP FUSE READ

ENR/W 8'b000x_xxx0

– – – – – – –OTP FUSE

READ EN

0 0 0 x x x x 0

84 OTP LOAD MASK R/W 8'b0000_0000START RL PWBRTN FORCE PWRCTL RL PWRCTL RL OTP RL OTP ECC

RL OTP FUSE

RL TRIM FUSE

0 0 0 0 0 0 0 0

8A OTP ECC SE1 R 8'bxxx0_0000– – – ECC5_SE ECC4_SE ECC3_SE ECC2_SE ECC1_SE

x x x 0 0 0 0 0

8B OTP ECC SE2 R 8'bxxx0_0000– – – ECC10_SE ECC9_SE ECC8_SE ECC7_SE ECC6_SE

x x x 0 0 0 0 0

8C OTP ECC DE1 R 8'bxxx0_0000– – – ECC5_DE ECC4_DE ECC3_DE ECC2_DE ECC1_DE

x x x 0 0 0 0 0

Table 135. Functional page (continued)

AddRegister

NameR/W Default

BITS[7:0]

7 6 5 4 3 2 1 0

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8D OTP ECC DE2 R 8'bxxx0_0000– – – ECC10_DE ECC9_DE ECC8_DE ECC7_DE ECC6_DE

x x x 0 0 0 0 0

A0 OTP SW1AB VOLT R/W 8'b00xx_xxxx– – SW1AB_VOLT[5:0]

0 0 x x x x x x

A1 OTP SW1AB SEQ R/W 8'b000x_xxXx– SW1AB_SEQ[4:0]

0 0 0 x x x X x

A2OTP SW1AB

CONFIGR/W 8'b0000_xxxx

– – – – SW1_CONFIG[1:0] SW1AB_FREQ[1:0]

0 0 0 0 x x x x

A8 OTP SW1C VOLT R/W 8'b00xx_xxxx– – SW1C_VOLT[5:0]

0 0 x x x x x x

A9 OTP SW1C SEQ R/W 8'b000x_xxxx– SW1C_SEQ[4:0]

0 0 0 x x x x x

AAOTP SW1C

CONFIGR/W 8'b0000_00xx

– – – – – – SW1C_FREQ[1:0]

0 0 0 0 0 0 x x

AC OTP SW2 VOLT R/W 8'b0xxx_xxxx– SW2_VOLT[5:0]

0 x x x x x x x

AD OTP SW2 SEQ R/W 8'b000x_xxxx– – SW2_SEQ[4:0]

0 0 0 x x x x x

AE OTP SW2 CONFIG R/W 8'b0000_00xx– – – – – – SW2_FREQ[1:0]

0 0 0 0 0 0 x x

B0 OTP SW3A VOLT R/W 8'b0xxx_xxxx– SW3A_VOLT[6:0]

0 x x x x x x x

B1 OTP SW3A SEQ R/W 8'b000x_xxxx– – SW3A_SEQ[4:0]

0 0 0 x x x x x

B2OTP SW3A

CONFIGR/W 8'b0000_xxxx

– – – – SW3_CONFIG[1:0] SW3A_FREQ[1:0]

0 0 0 0 x x x x

B4 OTP SW3B VOLT R/W 8'b0xxx_xxxx– SW3B_VOLT[6:0]

0 x x x x x x x

B5 OTP SW3B SEQ R/W 8'b000x_xxxx– – SW3B_SEQ[4:0]

0 0 0 x x x x x

B6OTP SW3B

CONFIGR/W 8'b0000_00xx

– – – – – – SW3B_CONFIG[1:0]

0 0 0 0 0 0 x x

Table 136. Extended page 1 (continued)

Address Register Name TYPE DefaultBITS[7:0]

7 6 5 4 3 2 1 0

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B8 OTP SW4 VOLT R/W 8'b00xx_xxxx– SW4_VOLT[6:0]

0 0 x x x x x x

B9 OTP SW4 SEQ R/W 8'b000x_xxxx– – – SW4_SEQ[4:0]

0 0 0 x x x x x

BA OTP SW4 CONFIG R/W 8'b000x_xxxx– – – VTT – – SW4_FREQ[1:0]

0 0 0 x x x x x

BC OTP SWBST VOLT R/W 8'b0000_00xx– – – – – – SWBST_VOLT[1:0]

0 0 0 0 0 0 x x

BD OTP SWBST SEQ R/W 8'b0000_xxxx– – – SWBST_SEQ[4:0]

0 0 0 0 x x x x

C0 OTP VSNVS VOLT R/W 8'b0000_0xxx– – – – – VSNVS_VOLT[2:0]

0 0 0 0 0 0 x x

C4OTP VREFDDR

SEQR/W 8'b000x_x0xx

– – – VREFDDR_SEQ[4:0]

0 0 0 x x 0 x x

C8 OTP VGEN1 VOLT R/W 8'b0000_xxxx– – – – VGEN1_VOLT[3:0]

0 0 0 0 x x x x

C9 OTP VGEN1 SEQ R/W 8'b000x_xxxx– – – VGEN1_SEQ[4:0]

0 0 0 x x x x x

CC OTP VGEN2 VOLT R/W 8'b0000_xxxx– – – – VGEN2_VOLT[3:0]

0 0 0 0 x x x x

CD OTP VGEN2 SEQ R/W 8'b000x_xxxx– – – VGEN2_SEQ[4:0]

0 0 0 x x x x x

D0 OTP VGEN3 VOLT R/W 8'b0000_xxxx– – – – VGEN3_VOLT[3:0]

0 0 0 0 x x x x

D1 OTP VGEN3 SEQ R/W 8'b000x_xxxx– – – VGEN3_SEQ[4:0]

0 0 0 x x x x x

D4 OTP VGEN4 VOLT R/W 8'b0000_xxxx– – – – VGEN4_VOLT[3:0]

0 0 0 0 x x x x

D5 OTP VGEN4 SEQ R/W 8'b000x_xxxx– – – VGEN4_SEQ[4:0]

0 0 0 x x x x x

Table 136. Extended page 1 (continued)

Address Register Name TYPE DefaultBITS[7:0]

7 6 5 4 3 2 1 0

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NXP Semiconductors 109

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

D8 OTP VGEN5 VOLT R/W 8'b0000_xxxx– – – – VGEN5_VOLT[3:0]

0 0 0 0 x x x x

D9 OTP VGEN5 SEQ R/W 8'b000x_xxxx– – – VGEN5_SEQ[4:0]

0 0 0 x x x x x

DC OTP VGEN6 VOLT R/W 8'b0000_xxxx– – – – VGEN6_VOLT[3:0]

0 0 0 0 x x x x

DD OTP VGEN6 SEQ R/W 8'b000x_xxxx– – – VGEN6_SEQ[4:0]

0 0 0 x x x x x

E0 OTP PU CONFIG1 R/W 8'b000x_xxxx– – –

PWRON_CFG1

SWDVS_CLK1[1:0] SEQ_CLK_SPEED1[1:0]

0 0 0 x x x x x

E1 OTP PU CONFIG2 R/W 8'b000x_xxxx– – –

PWRON_CFG2

SWDVS_CLK2[1:0] SEQ_CLK_SPEED2[1:0]

0 0 0 x x x x x

E2 OTP PU CONFIG3 R/W 8'b000x_xxxx– – –

PWRON_CFG3

SWDVS_CLK3[1:0] SEQ_CLK_SPEED3[1:0]

0 0 0 x x x x x

E3OTP PU CONFIG

XORR 8'b000x_xxxx

– – –PWRON_CFG

_XORSWDVS_CLK3_XOR SEQ_CLK_SPEED_XOR

0 0 0 x x x x x

E4 (80) OTP FUSE POR1 R/W 8'b0000_00x0TBB_POR

SOFT_FUSE_POR

– – – – FUSE_POR1 –

0 0 0 0 0 0 x 0

E5 OTP FUSE POR1 R/W 8'b0000_00x0RSVD RSVD – – – – FUSE_POR2 –

0 0 0 0 0 0 x 0

E6 OTP FUSE POR1 R/W 8'b0000_00x0RSVD RSVD – – – – FUSE_POR3 –

0 0 0 0 0 0 x 0

E7OTP FUSE POR

XORR 8'b0000_00x0

RSVD RSVD – – – –FUSE_POR_X

OR–

0 0 0 0 0 0 x 0

E8 OTP PWRGD EN R/W/M 8'b0000_000x– – – – – – – OTP_PG_EN

0 0 0 0 0 0 x 0

F0 OTP EN ECCO R/W 8'b000x_xxxx– – –

EN_ECC_BANK5

EN_ECC_BANK4

EN_ECC_BANK3

EN_ECC_BANK2

EN_ECC_BANK1

0 0 0 x x x x x

F1 OTP EN ECC1 R/W 8'b000x_xxxx– – –

EN_ECC_BANK10

EN_ECC_BANK9

EN_ECC_BANK8

EN_ECC_BANK7

EN_ECC_BANK6

0 0 0 x x x x x

Table 136. Extended page 1 (continued)

Address Register Name TYPE DefaultBITS[7:0]

7 6 5 4 3 2 1 0

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110 NXP Semiconductors

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

F4 OTP SPARE2_4 R/W 8'b0000_xxxx– – – – RSVD

0 0 0 0 x x x x

F5 OTP SPARE4_3 R/W 8'b0000_0xxx– – – – – RSVD

0 0 0 0 0 x x x

F6 OTP SPARE6_2 R/W 8'b0000_00xx– – – – – – RSVD

0 0 0 0 0 0 x x

F7 OTP SPARE7_1 R/W 8'b0000_0xxx– – – – – – – RSVD

0 0 0 0 0 x x x

FE OTP DONE R/W 8'b0000_000x– – – – – – – OTP_DONE

0 0 0 0 0 0 0 x

FF OTP I2C ADDR R/W 8'b0000_0xxx– – – –

I2C_SLV ADDR[3]

I2C_SLV ADDR[2:0]

0 0 0 0 1 x x x

Notes80. In the PF0100Z FUSE_POR1, FUSE_POR2, and FUSE_POR3 are XOR’ed into the FUSE_POR_XOR bit. The FUSE_POR_XOR has to be 1 for

fuses to be loaded. This can be achieved by setting any one or all of the FUSE_PORx bits. In the PF0100AZ, the XOR function is removed. It is required to set all of the FUSE_PORx bits to be able to load the fuses.

Table 137. Extended page 2

Address Register Name TYPE DefaultBITS[7:0]

7 6 5 4 3 2 1 0

81 SW1AB PWRSTG R/W 8'b1111_1111RSVD RSVD RSVD RSVD RSVD SW1AB_PWRSTG[2:0]

1 1 1 1 1 1 1 1

82 PWRSTG RSVD R 8'b0000_0000PWRSTGRSVD

0 0 0 0 0 0 0 0

83 SW1C PWRSTG R 8'b1111_1111RSVD RSVD RSVD RSVD RSVD SW1C_PWRSTG[2:0]

1 1 1 1 1 1 1 1

84 SW2 PWRSTG R 8'b1111_1111RSVD RSVD RSVD RSVD RSVD SW2_PWRSTG[2:0]

1 1 1 1 1 1 1 1

85 SW3A PWRSTG R 8'b1111_1111RSVD RSVD RSVD RSVD RSVD SW3A_PWRSTG[2:0]

1 1 1 1 1 1 1 1

86 SW3B PWRSTG R 8'b1111_1111RSVD RSVD RSVD RSVD RSVD SW3B_PWRSTG[2:0]

1 1 1 1 1 1 1 1

87 SW4 PWRSTG R 8'b0111_1111

FSLEXT_ THERM_ DISABLE

PWRGD_ SHDWN_ DISABLE

RSVD RSVD RSVD SW4_PWRSTG[2:0]

0 0 1 1 1 1 1 1

88PWRCTRL OTP

CTRLR/W 8'b0000_0001

– – – – – – PWRGD_ENOTP_

SHDWN_EN

0 0 0 0 0 0 0 1

Table 136. Extended page 1 (continued)

Address Register Name TYPE DefaultBITS[7:0]

7 6 5 4 3 2 1 0

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NXP Semiconductors 111

PF0100Z

FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

8DI2C WRITE

ADDRESS TRAPR/W 8'b0000_0000

I2C_WRITE_ADDRESS_TRAP[7:0]

0 0 0 0 0 0 0 0

8E I2C TRAP PAGE R/W 8'b0000_0000LET_IT_ ROLL RSVD RSVD I2C_TRAP_PAGE[4:0]

0 0 0 0 0 0 0 0

8F I2C TRAP CNTR R/W 8'b0000_0000I2C_WRITE_ADDRESS_COUNTER[7:0]

0 0 0 0 0 0 0 0

90 IO DRV R/W 8'b00xx_xxxxSDA_DRV[1:0] SDWNB_DRV[1:0] INTB_DRV[1:0] RESETBMCU_DRV[1:0]

0 0 x x x x x x

D0 OTP AUTO ECC0 R/W 8'b0000_0000– – –

AUTO_ECC _BANK5

AUTO_ECC _BANK4

AUTO_ECC_BANK3

AUTO_ECC _BANK2

AUTO_ECC_BANK1

0 0 0 0 0 0 0 0

D1 OTP AUTO ECC1 R/W 8'b0000_0000– – –

AUTO_ECC_BANK10

AUTO_ECC _BANK9

AUTO_ECC_BANK8

AUTO_ECCBANK7

AUTO_ECC_BANK6

0 0 0 0 0 0 0 0

D8 Reserved – 8'b0000_0000 Reserved(81)

D9 Reserved – 8'b0000_0000 Reserved(81)

E1 OTP ECC CTRL1 R/W 8'b0000_0000

ECC1_EN_ TBB

ECC1_CALC_CIN

ECC1_CIN_TBB[5:0]

0 0 0 0 0 0 0 0

E2 OTP ECC CTRL2 R/W 8'b0000_0000

ECC2_EN_ TBB

ECC2_CALC_CIN

ECC2_CIN_TBB[5:0]

0 0 0 0 0 0 0 0

E3 OTP ECC CTRL3 R/W 8'b0000_0000

ECC3_EN_ TBB

ECC3_CALC_CIN

ECC3_CIN_TBB[5:0]

0 0 0 0 0 0 0 0

E4 OTP ECC CTRL4 R/W 8'b0000_0000

ECC4_EN_ TBB

ECC4_CALC_CIN

ECC4_CIN_TBB[5:0]

0 0 0 0 0 0 0 0

E5 OTP ECC CTRL5 R/W 8'b0000_0000

ECC5_EN_ TBB

ECC5_CALC_CIN

ECC5_CIN_TBB[5:0]

0 0 0 0 0 0 0 0

E6 OTP ECC CTRL6 R/W 8'b0000_0000

ECC6_EN_ TBB

ECC6_CALC_CIN

ECC6_CIN_TBB[5:0]

0 0 0 0 0 0 0 0

E7 OTP ECC CTRL7 R/W 8'b0000_0000

ECC7_EN_ TBB

ECC7_CALC_CIN

ECC7_CIN_TBB[5:0]

0 0 0 0 0 0 0 0

E8 OTP ECC CTRL8 R/W 8'b0000_0000

ECC8_EN_ TBB

ECC8_CALC_CIN

ECC8_CIN_TBB[5:0]

0 0 0 0 0 0 0 0

Table 137. Extended page 2 (continued)

Address Register Name TYPE DefaultBITS[7:0]

7 6 5 4 3 2 1 0

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112 NXP Semiconductors

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FUNCTIONAL BLOCK REQUIREMENTS AND BEHAVIORS

E9 OTP ECC CTRL9 R/W 8'b0000_0000

ECC9_EN_ TBB

ECC9_CALC_CIN

ECC9_CIN_TBB[5:0]

0 0 0 0 0 0 0 0

EA OTP ECC CTRL10 R/W 8'b0000_0000

ECC10_EN_TBB

ECC10_CALC_CIN

ECC10_CIN_TBB[5:0]

0 0 0 0 0 0 0 0

F1 OTP FUSE CTRL1 R/W 8'b0000_0000– – – –

ANTIFUSE1_EN

ANTIFUSE1_LOAD

ANTIFUSE1_RW

BYPASS1

0 0 0 0 0 0 0 0

F2 OTP FUSE CTRL2 R/W 8'b0000_0000– – – –

ANTIFUSE2_EN

ANTIFUSE2_LOAD

ANTIFUSE2_RW

BYPASS2

0 0 0 0 0 0 0 0

F3 OTP FUSE CTRL3 R/W 8'b0000_0000– – – –

ANTIFUSE3_EN

ANTIFUSE3_LOAD

ANTIFUSE3_RW

BYPASS3

0 0 0 0 0 0 0 0

F4 OTP FUSE CTRL4 R/W 8'b0000_0000– – – –

ANTIFUSE4_EN

ANTIFUSE4_LOAD

ANTIFUSE4_RW

BYPASS4

0 0 0 0 0 0 0 0

F5 OTP FUSE CTRL5 R/W 8'b0000_0000– – – –

ANTIFUSE5_EN

ANTIFUSE5_LOAD

ANTIFUSE5_RW

BYPASS5

0 0 0 0 0 0 0 0

F6 OTP FUSE CTRL6 R/W 8'b0000_0000– – – –

ANTIFUSE6_EN

ANTIFUSE6_LOAD

ANTIFUSE6_RW

BYPASS6

0 0 0 0 0 0 0 0

F7 OTP FUSE CTRL7 R/W 8'b0000_0000– – – –

ANTIFUSE7_EN

ANTIFUSE7_LOAD

ANTIFUSE7_RW

BYPASS7

0 0 0 0 0 0 0 0

F8 OTP FUSE CTRL8 R/W 8'b0000_0000– – – –

ANTIFUSE8_EN

ANTIFUSE8_LOAD

ANTIFUSE8_RW

BYPASS8

0 0 0 0 0 0 0 0

F9 OTP FUSE CTRL9 R/W 8'b0000_0000– – – –

ANTIFUSE9_EN

ANTIFUSE99_LOAD

ANTIFUSE9_RW

BYPASS9

0 0 0 0 0 0 0 0

FA OTP FUSE CTRL10 R/W 8'b0000_0000– – – –

ANTIFUSE10_EN

ANTIFUSE10_LOAD

ANTIFUSE10_RW

BYPASS10

0 0 0 0 0 0 0 0

Notes81. Do not write in reserved registers.

Table 137. Extended page 2 (continued)

Address Register Name TYPE DefaultBITS[7:0]

7 6 5 4 3 2 1 0

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NXP Semiconductors 113

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TYPICAL APPLICATIONS

7 Typical applications

7.1 Introduction

Figure 29 provides a typical application diagram of the PF0100Z PMIC together with its functional components. For details on component references and additional components such as filters, refer to the individual sections.

7.1.1 Application diagram

Figure 29. Typical application schematic

VIN

INT

B

LICELL

SWBSTFB

SWBSTIN

SWBSTLX

O/PDrive

SWBST600 mABoost

PW

RO

N

ST

AN

DB

Y

ICT

ES

T

Output Pin

Input Pin

Bi-directional Pin

Package Pin Legend

SCL

SDA

VDDIOSW3A/B

Single/Dual DDR

2500 mABuck

VCOREDIG

VCOREREF

SD

WN

B

GNDREF

100nF

Coin Cell Battery

1uF

220nF

Vin

2 x 22uF

SWBST Output

2.2uH10uF

Vin

To/From AP

SW1CFB

SW1AIN

SW1C 2000 mA

Buck

SW1FB

SW1ALX

SW1BLX

SW1A/B Single/Dual

2500 mA Buck

SW1VSSSNS

1.0uH

4 x22uF

SW1AB Output

Vin4.7uF

VSNVS

VS

NV

S

0.47uF

Li Cell Charger

RE

SE

TB

MC

U

SW2 2000 mA

Buck

VGEN1 100mAVGEN1

VIN1

2.2uF

VGEN2 250mA

VGEN24.7uF

VGEN3 100mA

VGEN3

VIN2

2.2uF

VGEN4 350mAVGEN44.7uF

VGEN5 100mA

VGEN5

VIN3

2.2uF

VGEN6 200mAVGEN62.2uF

Best of

Supply

OTP

100

k

SW4 1000 mA

Buck

VREFDDR1uF

VDDOTP

VINREFDDR

VHALF

100nF

100nF

VCORE

100

k

100

k

4.7

k

PF0100

CONTROL

Clocks32kHz and 16MHz

Initialization State Machine

I2C Interface

Clocks and resets

I2C Register

map

Trim-In-Package

4.7

k

1uF

O/PDrive

O/PDrive

Vin

SW1BIN

4.7uF

SW1CLXO/P

Drive SW1CIN

4.7uF

1.0uH

SW1C Output

2 x 22uFVin

SW2FB

SW2LXO/P

DriveSW2IN

4.7uF

1.0uH

SW2 Output

2 x 22uFVin

SW2IN

SW3AIN

SW3AFB

SW3ALX

SW3BLX

1.0uH2 x 22uF

SW3A OutputVin

4.7uF

O/PDrive

O/PDrive SW3BIN

4.7uFVin

SW3B OutputSW3BFB

2 x 22uF1.0uH

SW3VSSSNS

SW4IN

SW4FB

SW4LX1.0uH 2 x 22uF

SW4 OutputVin

4.7uF

O/PDrive

Supplies Control

DVS ControlDVS CONTROL

Reference Generation

VSW3A

Vin

Core Control logic

VIN1

VIN2

VIN3

VDDOTP

VSW2VSW2VSW2

1.0uF

1.0uF

1.0uF

GNDREF1

2.2uF

1uF

100

k

VSW2

VDDIO

To MCU

0.1uF

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114 NXP Semiconductors

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TYPICAL APPLICATIONS

7.1.2 Bill of materials The following table provides a complete list of the recommended components on a full featured system using the PF0100Z Device. Critical components such as inductors, transistors, and diodes are provided with a recommended part number, but equivalent components may be used.

Table 138. Bill of materials (82)

Value Qty Description Part# Manufacturer Component/pin

PMIC

1 Power management IC MMPF0100Z NXP

Buck, SW1AB - (0.300-1.875 V), 2.5 A

1.0 μH 14 x 4 x 2.1ISAT = 4.5 A for 10% drop, DCRMAX = 11.9 mΩ

XFL4020-102MEB Coilcraft Output inductor

1.0 μH –5 x 5 x 1.5ISAT = 3.6 A for 10% drop, DCRMAX = 50 mΩ

LPS5015_102ML CoilcraftOutput inductoroptional

1.0 μH –2.5 x 2.0 x 1.2 ISAT = 4.5 A DCRMAX = 42 mΩ

DFE252012PD-1R0M TOKOOutput inductor (optional)

22 μF 4 10 V X5R 0805 LMK212BJ226MG-T Taiyo Yuden Output capacitance

4.7 μF 2 10 V X5R 0603 LMK107BJ475KA-T Taiyo Yuden SW1AIN, SW1BIN

0.1 μF 1 10 V X5R 0402 C0402C104K8PAC Kemet Input capacitance

Buck, SW1C- (0.300-1.875 V), 2.0 A

1.0 μH 14 x 4 x 1.2ISAT = 2.8 A for 10% drop, DCRMAX = 60 mΩ

LPS4012-102NL Coilcraft Output inductor

1.0 μH –3 x 3 x1.2ISAT = 2.5 A for 10% drop, DCRMAX = 42 mΩ

XFL3012-102ML CoilcraftOutput inductoroptional

1.0 μH –2.5 x 2.0 x 1.2 ISAT = 4.5 A DCRMAX = 42 mΩ

DFE252012PD-1R0M TOKOOutput inductor (optional)

22 μF 2 10 V X5R 0805 LMK212BJ226MG-T Taiyo Yuden Output capacitance

4.7 μF 1 10 V X5R 0603 LMK107BJ475KA-T Taiyo Yuden Input capacitance

0.1 μF 1 10 V X5R 0402 C0402C104K8PAC Kemet Input capacitance

Buck, SW1ABC - (0.300-1.875 V), 4.5 A

1.0 μH 14.2 x 4.2 x 2ISAT = 5.1 A for 10% drop, DCRMAX = 29 mΩ

FDSD0420D-1R0M TOKO Inc. Output inductor

22 μF 6 10 V X5R 0805 LMK212BJ226MG-T Taiyo Yuden Output capacitance

4.7 μF 2 10 V X5R 0603 LMK107BJ475KA-T Taiyo Yuden Input capacitance

0.1 μF 1 10 V X5R 0402 C0402C104K8PAC Kemet Input capacitance

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TYPICAL APPLICATIONS

Buck, SW2 - (0.400-3.300 V), 2.0 A

1.0 μH 14 x 4 x 1.2ISAT = 2.8 A for 10% drop, DCRMAX = 60 mΩ

LPS4012-102NL Coilcraft Output inductor

1.0 μH –3x 3 x 1.2ISAT = 2.5 A for 10% drop, DCRMAX = 42 mΩ

XFL3012-102ML CoilcraftOutput inductoroptional

1.0 μH –2.5 x 2.0 x 1.2 ISAT = 4.5 A DCRMAX = 42 mΩ

DFE252012PD-1R0M TOKOOutput inductor (optional)

22 μF 2 10 V X5R 0805 LMK212BJ226MG-T Taiyo Yuden Output capacitance

4.7 μF 1 10 V X5R 0603 LMK107BJ475KA-T Taiyo Yuden Input capacitance

0.1 μF 1 10 V X5R 0402 C0402C104K8PAC Kemet Input capacitance

Buck, SW3AB - (0.400-3.300 V), 2.5 A

1.0 μH 14 x 4 x 2.1ISAT = 4.5 A for 10% drop, DCRMAX = 11.9 mΩ

XFL4020-102MEB Coilcraft Output inductor

1.0 μH –5 x 5 x 1.5ISAT = 3.6 A for 10% drop, DCRMAX = 50 mΩ

LPS5015_102ML CoilcraftOutput inductoroptional

1.0 μH –2.5 x 2.0 x 1.2 ISAT = 4.5 A DCRMAX = 42 mΩ

DFE252012PD-1R0M TOKOOutput inductor (optional)

22 μF 4 10 V X5R 0805 LMK212BJ226MG-T Taiyo Yuden Output capacitance

4.7 μF 2 10 V X5R 0603 LMK107BJ475KA-T Taiyo Yuden SW3AIN, SW3BIN

0.1 μF 1 10 V X5R 0402 C0402C104K8PAC Kemet Input capacitance

Buck, SW4 - (0.400-3.300V), 1A

1.0 μH 12.5 x 2 x 1ISAT = 1.8 A for 30% drop, DCRMAX = 84 mΩ

VLS252010ET-1R0N TDK Output inductor

1.0 μH –2.5 x 2.0 x 1.2 ISAT = 4.5 A DCRMAX = 42 mΩ

DFE252012PD-1R0M TOKOOutput inductor (optional)

1.0 μH -2.2 x 2.1 x 1ISAT = 1.2 A for 10% drop, DCRMAX = 89 mΩ

XPL2010_102ML CoilcraftOutput inductoroptional

22 μF 2 10 V X5R 0805 LMK212BJ226MG-T Taiyo Yuden Output capacitance

4.7 μF 1 10 V X5R 0603 LMK107BJ475KA-T Taiyo Yuden Input capacitance

0.1 μF 1 10 V X5R 0402 C0402C104K8PAC Kemet Input capacitance

Table 138. Bill of materials (82) (continued)

Value Qty Description Part# Manufacturer Component/pin

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116 NXP Semiconductors

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TYPICAL APPLICATIONS

BOOST, SWBST - 5.0 V, 600 mA

2.2 μH –3 x 3 x 1.5ISAT = 2.0 A for 10% drop, DCRMAX = 110 mΩ

LPS3015-222ML Coilcraft Output Inductor

2.2 μH –2.5 x 2.0 x 1.2 ISAT = 3.3 A DCRMAX = 84 mΩ

DFE252012PD-2R2M TOKOOutput inductor (optional)

22 μF 2 10 V X5R 0805 LMK212BJ226MG-T Taiyo Yuden Output capacitance

10 μF 1 10 V X5R 0805 C2012X5R1A106MT TDK Input capacitance

2.2 μF 1 6.3 V X5R 0402 C0402C225M9PACTU Kemet Input capacitance

0.1 μF 1 10 V X5R 0402 C0402C104K8PAC Kemet Input capacitance

1.0 A 1 20 V SOD-123FL MBR120VLSFT1G ON Semiconductor Schottky diode

LDO, VGEN1 - (0.80-1.55), 100 mA

2.2 μF 1 6.3 V X5R 0402 C0402C225M9PACTU Kemet Output capacitance

1.0 μF 1 10 V X5R 0402 CC0402KRX5R6BB105 Yageo America Input capacitance

LDO, VGEN2 - (0.80-1.55), 250 mA

4.7 μF 1 6.3 V X5R 0402 C0402X5R6R3-475MNP Venkel Output capacitance

LDO, VGEN3 - (1.80-3.30), 100 mA

2.2 μF 1 6.3 V X5R 0402 C0402C225M9PACTU Kemet Output capacitance

1.0 μF 1 10 V X5R 0402 CC0402KRX5R6BB105 Yageo America Input capacitance

LDO, VGEN4 - (1.80-3.30), 350 mA

4.7 μF 1 6.3 V X5R 0402 C0402X5R6R3-475MNP Venkel Output capacitance

LDO, VGEN5 - (1.80-3.30), 150 mA

2.2 μF 1 6.3 V X5R 0402 C0402C225M9PACTU Kemet Output capacitance

1.0 μF 1 10 V X5R 0402 CC0402KRX5R6BB105 Yageo America Input capacitance

LDO, VGEN6 - (1.80-3.30), 200 mA

2.2 μF 1 6.3 V X5R 0402 C0402C225M9PACTU Kemet Output capacitance

LDO/Switch VSNVS - (1.1-3.3), 200 mA

0.47 μF 1 6.3 V X5R 0402 C1005X5R0J474K TDK Output capacitance

Reference, VREFDDR - (0.20-1.65V), 10 mA

1.0 μF 1 10 V X5R 0402 CC0402KRX5R6BB105 Yageo America Output capacitance

0.1 μF 2 10 V X5R 0402 C0402C104K8PAC KemetVHALF, VINREFDDR

Internal references, VCOREDIG, VCOREREF, VCORE

1.0 μF 1 10 V X5R 0402 CC0402KRX5R6BB105 Yageo America VCOREDIG

1.0 μF 1 10 V X5R 0402 CC0402KRX5R6BB105 Yageo America VCORE

0.22 μF 1 10 V X5R 0402 GRM155R61A224KE19D Murata VCOREREF

Coin cell

0.1 μF 1 10 V X5R 0402 C0402C104K8PAC Kemet LICELL

Table 138. Bill of materials (82) (continued)

Value Qty Description Part# Manufacturer Component/pin

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NXP Semiconductors 117

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TYPICAL APPLICATIONS

7.2 PF0100Z layout guidelines

7.2.1 General board recommendations1. It is recommended to use an eight layer board stack-up arranged as follows:

• High current signal• GND• Signal• Power• Power• Signal• GND• High current signal

2. Allocate TOP and BOTTOM PCB Layers for POWER ROUTING (high current signals), copper-pour the unused area.

3. Use internal layers sandwiched between two GND planes for the SIGNAL routing.

7.2.2 Component placement It is desirable to keep all component related to the power stage as close to the PMIC as possible, specially decoupling input and output capacitors.

7.2.3 General routing requirements1. Some recommended things to keep in mind for manufacturability:

• Via in pads require a 4.5 mil minimum annular ring. Pad must be 9.0 mils larger than the hole• Maximum copper thickness for lines less than 5.0 mils wide is 0.6 oz copper• Minimum allowed spacing between line and hole pad is 3.5 mils• Minimum allowed spacing between line and line is 3.0 mils

2. Care must be taken with SWxFB pins traces. These signals are susceptible to noise and must be routed far away from power, clock, or high power signals, like the ones on the SWxIN, SWx, SWxLX, SWBSTIN, SWBST, and SWBSTLX pins. They could be also shielded.

3. Shield feedback traces of the regulators and keep them as short as possible (trace them on the bottom so the ground and power planes shield these traces).

4. Avoid coupling traces between important signal/low noise supplies (like REFCORE, VCORE, VCOREDIG) from any switching node (i.e. SW1ALX, SW1BLX, SW1CLX, SW2LX, SW3ALX, SW3BLX, SW4LX, and SWBSTLX).

5. Make sure all components related to a specific block are referenced to the corresponding ground.

Miscellaneous

0.1 μF 1 10 V X5R 0402 CD402C104K8PAC Kemet VDDIO

1.0 μF 1 10 V X5R 0402 CC0402KRX5R6BB105 Yageo America VIN

100 kΩ 1 1/16 W 0402 RK73H1ETTP1003F KOA SPEER PWRON

100 kΩ 1 1/16 W 0402 RK73H1ETTP1003F KOA SPEER RESETBMCU

100 kΩ 1 1/16 W 0402 RK73H1ETTP1003F KOA SPEER SDWN

100 kΩ 1 1/16 W 0402 RK73H1ETTP1003F KOA SPEER INTB

Notes82. NXP does not assume liability, endorse, or warrant components from external manufacturers referenced in circuit drawings or tables. While NXP

offers component recommendations in this configuration, it is the customer’s responsibility to validate their application.

Table 138. Bill of materials (82) (continued)

Value Qty Description Part# Manufacturer Component/pin

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7.2.4 Parallel routing requirements

1. I2C signal routing• CLK is the fastest signal of the system, so it must be given special care.• To avoid contamination of these delicate signals by nearby high power or high frequency signals, it is a good practice to

shield them with ground planes placed on adjacent layers. Make sure the ground plane is uniform throughout the whole signal trace length.

Figure 30. Recommended shielding for critical signals.

• These signals can be placed on an outer layer of the board to reduce their capacitance with respect to the ground plane.• Care must be taken with these signals not to contaminate analog signals, as they are high frequency signals. Another good

practice is to trace them perpendicularly on different layers, so there is a minimum area of proximity between signals.

7.2.5 Switching regulator layout recommendations1. Per design, the switching regulators in PF0100Z are designed to operate with only one input bulk capacitor. However, it is

recommended to add a high-frequency filter input capacitor (CIN_hf), to filter out any noise at the regulator input. This capacitor should be in the range of 100 nF and should be placed right next to or under the IC, closest to the IC pins.

2. Make high-current ripple traces low-inductance (short, high W/L ratio).

3. Make high-current traces wide or copper islands.

4. Make high-current traces symetrical for dual–phase regulators (SW1, SW3).

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Figure 31. Generic buck regulator architecture

Figure 32. Recommended layout for buck regulators

7.3 Thermal information

7.3.1 Rating data The thermal rating data of the packages has been simulated with the results listed in Table 5.

Junction to ambient thermal resistance nomenclature: the JEDEC specification reserves the symbol RθJA or θJA (Theta-JA) strictly for junction-to-ambient thermal resistance on a 1s test board in natural convection environment. RθJMA or θJMA (Theta-JMA) is used for both junction-to-ambient on a 2s2p test board in natural convection and for junction-to-ambient with forced convection on both 1s and 2s2p test boards. It is anticipated the generic name, Theta-JA, continues to be commonly used.

The JEDEC standards can be consulted at http://www.jedec.org.

Diver Controller

SWxIN

SWxLX

SWxFB

COUT

CIN

L

SWx

VIN

Compensation

CIN_HF

SWxIN Inductor

CIN

COUT

CIN_HFSWxLX

GND

SWxFB

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7.3.2 Estimation of junction temperature An estimation of the chip junction temperature TJ can be obtained from the equation:

TJ = TA + (RθJA x PD)

with:

TA = Ambient temperature for the package in °C

RθJA = Junction to ambient thermal resistance in °C/W

PD = Power dissipation in the package in W

The junction to ambient thermal resistance is an industry standard value provideing a quick and easy estimation of thermal performance. Unfortunately, there are two values in common usage: the value determined on a single layer board RθJA and the value obtained on a four layer board RθJMA. Actual application PCBs show a performance close to the simulated four layer board value although this may be somewhat degraded in case of significant power dissipated by other components placed close to the device.

At a known board temperature, the junction temperature TJ is estimated using the following equation

TJ = TB + (RθJB x PD) with

TB = Board temperature at the package perimeter in °C

RθJB = Junction to board thermal resistance in °C/W

PD = Power dissipation in the package in W

When the heat loss from the package case to the air can be ignored, acceptable predictions of junction temperature can be made.

See 6 Functional block requirements and behaviors, page 17 for more details on thermal management.

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PACKAGING

8 Packaging

8.1 Packaging dimensions

Package dimensions are provided in package drawings. To find the most current package outline drawing, go to www.nxp.com and perform a keyword search for the drawing’s document number. See the 4.2 Thermal characteristics, page 10 for specific thermal characteristics for each package.

Table 139. Package drawing information

Package Suffix Package outline drawing number

56 QFN 8x8 mm - 0.5 mm pitch. WF-Type (wettable flank) ES 98ASA00589D

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REFERENCE SECTION

9 Reference section

9.1 Reference documents

Table 140. PF0100Z reference documents

Reference Description

AN4536 MMPF0100 OTP Programming Instructions

AN4622 MMPF0100 Layout Guidelines

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REVISION HISTORY

10 Revision history

10.1 Document changes

Revision Date Description of Changes

1.0 11/2012 • Initial release

2.0 1/2013

• Deleted unneeded rows from Ordering information and updated part number• Changed Note 2• Added Note 4 to Pin Definitions and assigned it to the applicable pin names• Corrected Functional Block diagram• Corrected pin name in section 7.1• Deleted unnecessary columns in Table 9• Added section 7.2.1 and fixed TOC• Corrected FF row in Table 136• Corrected schematics 10, 11, 12, 14, 16, 17, 18, 20, and 22• Corrected page one package isometric• Added warning to note 6• Changed graphics on figures 13, 15, 19, and 21• Deleted original note 64.• Deleted reference to ICOINLO in Coin Cell Charger Control• Updated figure 28• Corrected part number in BOM• Corrected #4 in General Routing Requirements• Added AN4622 to Reference Documents

3.0 2/2013

• Separated VSNS pin for HBM page 9• Reworded sentence in Programming OTP fuses• Added 2.0 MHz clock frequency• Changed min. for VREFDDR Current Limit• Changed min. for VGEN1 DC Current Limit• Changed min. for VGEN1 DC Overcurrent Protection Threshold• Changed max. for VGEN2 ACTIVE MODE - DC Current Limit• Changed min. for VGEN3 DC Current Limit• Changed min. for VGEN4 DC Current Limit• Changed min. for VGEN5 ACTIVE MODE - DC Current Limit• Changed min. for VGEN6 DC Current Limit• Changed min. for VGEN6 DC Overcurrent Protection Threshold• Changed max. for VSNVS DC, LDO VIN Threshold, VIN going high with valid coin cell• Changed max. for VSNVS DC, LDO VIN Threshold, VIN going low with valid coin cell• Added note to VSNVS AC AND TRANSIENT Turn-on Time, and deleted notation of conditions• Register D8 and D9 in table 137 marked as reserved. • Added Figure 4• Updated table 8. Current consumption summary.

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4.0 4/2014

• Added new package name and drawing for PF0100AZ• Added Table 2 listing differences between PF0100Z and PF0100AZ• Corrected VDDOTP maximum rating• Corrected SWBSTFB maximum rating• Updated Table 8 to included PF0100AZ specifications• Updated Figure 4• Added note of FUSE_POR-XOR bit for PF0100AZ in OTP prototyping• Corrected 2.0 MHz clock minimum specification from 1.85 MHz to 1.84 MHz in 16 MHz and 32 kHz

clocks• Corrected inductor Isat for SW1ABC single phase mode from 4.5 A to 6.0 A• Tightened accuracy specification in PFM mode for all the switching regulators• Corrected typical efficiency specifications for all switching regulators• Added note to clarify SWBST default operation in Auto mode• Added current limit specifications for VGEN2, VGEN6, and VSNVS for PF0100AZ• Corrected conditions for VSNVS turn-on time specifications• Changed VTH1 maximum specification from 3.05 V to 3.1 V• Updated Control interface I2C block description to include note about SCL/SDA drive strength• Corrected default values of bits in INTMASK0 register in Table 118• Corrected default value of 4 MSBs in Table 128• Corrected default value of bits in SILICONREVID register in Table 126• Updated Typical Application Schematic to add bypass capacitor on VDDIO pin• Added capacitor at VDDIO pin in Bill of Material table• Noted that voltage settings 0.6 V and below are not supported• VSNVS Turn On Delay (td1) spec corrected from 15 ms to 5.0 ms• Updated per GPCN 16220

5.0 10/2014

• Updated as per PB 16482• Increased ambient operating temperature of MMPF0100NPAZES device• Added additional specification line items for Standby current, Sleep current, and VREFDDR accuracy

for the extended temperature operation• Added new part number MMPF0100F8AZES • Updated Table 9

6.0 11/2014• Corrected the temperature range for the device MMPF0100F8AZES in Table 1• Updated Table 23• Updated Bill of Materials Table 138

7.0 7/2015• Added new part numbers MMPF0100F9AZES and MMPF0100FAAZES to Table 1• Updated Table 9

8.010/2015

• Added MMPF0100F0AZES to Table 1• Updated Table 9• Updated Table 52• Updated Table 137

10/2015 • Fixed typo on page 1

9.0 12/2015• Removed MMPF0100NPZES from Orderable part variations. No longer manufactured.• Added MMPF0100F6AZES to Orderable part variations• Updated Table 9 for MMPF0100F6AZES

10.0 3/2016 • Updated SW2 current capability from 2000 mA to 2500 mA for F9/FA versions

11.0 5/2016 • Changed Table 9 row - Default I2C Address from 0x80 to 0x08 for F0, F9, and FA

12.0 8/2016• Added NP version to OTP's with SW2 current capability of 2500 mA• Added BOM for SW1ABC

Revision Date Description of Changes

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based on the information in this document. NXP reserves the right to make changes without further notice to any

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Document Number: MMPF0100ZRev. 12.0

8/2016