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Modeling flow and transport in nanofluidic devices Brian Storey (Olin College) Collaborators: Jess Sustarich (Graduate student, UCSB) Sumita Pennathur (UCSB)

Modeling flow and transport in nanofluidic devices

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Modeling flow and transport in nanofluidic devices. Brian Storey (Olin College) Collaborators: Jess Sustarich (Graduate student, UCSB) Sumita Pennathur (UCSB). First…. the 30,000 foot view. Microfluidics – Lab on a chip ca. 1990. - PowerPoint PPT Presentation

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Page 1: Modeling flow and transport in  nanofluidic  devices

Modeling flow and transport in nanofluidic devices

Brian Storey (Olin College)

Collaborators: Jess Sustarich (Graduate student, UCSB)

Sumita Pennathur (UCSB)

Page 2: Modeling flow and transport in  nanofluidic  devices

First…. the 30,000 foot view

Page 3: Modeling flow and transport in  nanofluidic  devices

Microfluidics – Lab on a chip ca. 1990

• Microfluidics deals with the behavior, precise control and manipulation of fluids that are geometrically constrained to a small, typically sub-millimeter, scale. (Wikipedia)

Stephen Quake, Stanford Thorsen et al, Science, 2002

Micronit

Page 4: Modeling flow and transport in  nanofluidic  devices

Dolomite Dolomite Prakash & Gershenfeld, Science, 2007

Seth Fraden, BrandeisAgresti et al, PNAS 2010

Page 5: Modeling flow and transport in  nanofluidic  devices

Nagrath et al, Nature 2007

Circulating tumor cells, MGH

H1N1 Detection, Klapperich BU

Neutrophil Genomics, MGH

Kotz et al, Nature Med. 2010

CD4 cell count, Daktari Diagnostics

Page 6: Modeling flow and transport in  nanofluidic  devices

“Hype cycle”

Gartner Inc.

Microfluidics?

Nanofluidics?

Page 7: Modeling flow and transport in  nanofluidic  devices

Nanofluidics• Nanofluidics is the study of the behavior, manipulation, and

control of fluids that are confined to structures of nanometer (typically 1-100 nm) characteristic dimensions. Fluids confined in these structures exhibit physical behaviors not observed in larger structures, such as those of micrometer dimensions and above, because the characteristic physical scaling lengths of the fluid, (e.g. Debye length, hydrodynamic radius) very closely coincide with the dimensions of the nanostructure itself. (Wikipedia)

Page 8: Modeling flow and transport in  nanofluidic  devices

Nanofluidics is interesting because…

• Faster, cheaper, better– analogy to microelectronics.

• “the study of nanofluidics may ultimately become more a branch of surface science than an extension of microfluidics.” George Whitesides

Page 9: Modeling flow and transport in  nanofluidic  devices

Some background.

Flow in a channel.

Page 10: Modeling flow and transport in  nanofluidic  devices

Pressure driven flow is difficult at the nanoscale

High pressure Low pressure

Pressure driven flow of a Newtonian fluid between parallel plates has a parabolic velocity profile. The fluid velocity is zero at the walls and is maximum along the centerline.

𝑈𝑚𝑎𝑥=Δ𝑃𝐿

𝐻2

3𝜇

H

About 100 atmospheres of pressure neededto drive reasonable flow in typical channels

Page 11: Modeling flow and transport in  nanofluidic  devices

The electric double layer

--------

+

++

++

+

+

+

++ +

+

++

++

+ +

+

+

+

+

-

-

-

+

0 1 2 3 4 50

0.5

1

1.5

2

2.5

3

X

C

counter-ions

co-ions

-

-

-

-

-

-

-Glass + water

0HSiOSiOH 3

Glass Salt water

Debye length is the scale where concentrations of positive and negative ions are equal.

Page 12: Modeling flow and transport in  nanofluidic  devices

Electroosmosis (200th anniversary)

Electric field

- - - - - - - -

+

++

++

+

+

+

+

+

++

+++

++

++

+

+

+

+

+

+

-

-

-

+

- - - - - - -

+ ++

++

+

+

+

++

++

+++

++

++

+

+

+

+

+

+

-

-

-

+

+

+ -

-

+

+ -

-

+

+ -

--

-

-

-

-

Page 13: Modeling flow and transport in  nanofluidic  devices

Double layers are typically small ~10 nmVelocity profile in a 10 micron channel

0 0.2 0.4 0.6 0.8 1 1.2-1

-0.998

-0.996

-0.994

-0.992

-0.99

-0.988

-0.986

-0.984

-0.982

-0.98

Velocity

y

0 0.2 0.4 0.6 0.8 1 1.2-1

-0.8

-0.6

-0.4

-0.2

0

0.2

0.4

0.6

0.8

1

Velocity

y

EU slip Helmholtz-Smolochowski

Page 14: Modeling flow and transport in  nanofluidic  devices

Pressure-driven Electrokinetic

Molho and Santiago, 2002

Electroosmosis-experiments

Page 15: Modeling flow and transport in  nanofluidic  devices

The specific problem – Detection.

Page 16: Modeling flow and transport in  nanofluidic  devices

FASS in microchannels

Low cond. fluid High cond. fluidHigh cond. fluid

V

+

Chien & Burgi, A. Chem 1992

σ=10 σ=10σ=1

E=1

E=10

E Electric fieldσ Electrical conductivity

Page 17: Modeling flow and transport in  nanofluidic  devices

FASS in microchannels

--

-

-

--

-

-

-

Low cond. fluid High cond. fluidHigh cond. fluid

Sample ion

V

+

Chien & Burgi, A. Chem 1992

-

σ=10 σ=10σ=1

E=1 n=1

E=10

E Electric fieldσ Electrical conductivityn Sample concentration

Page 18: Modeling flow and transport in  nanofluidic  devices

FASS in microchannelsV

+

Chien & Burgi, A. Chem 1992

--

-

-

--

-

-

-

Low cond. fluid High cond. fluidHigh cond. fluid

Sample ion -

E=1 n=1

n=10

σ=10 σ=10σ=1

E=10

E Electric fieldσ Electrical conductivityn Sample concentration

Page 19: Modeling flow and transport in  nanofluidic  devices

FASS in microchannels

---

--

-

---

Low cond. fluid High cond. fluidHigh cond. fluid

Sample ion

V

+

Chien & Burgi, A. Chem 1992

-

Maximum enhancement in sample concentration is equal to conductivity ratio

E=10

E=1

n=10

σ=10 σ=10σ=1

E Electric fieldσ Electrical conductivityn Sample concentration

Page 20: Modeling flow and transport in  nanofluidic  devices

FASS in microchannels

Low cond. fluid High cond. fluidHigh cond. fluid

V

E

+

Chien & Burgi, A. Chem 1992

dP/dx

- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -

- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -

Page 21: Modeling flow and transport in  nanofluidic  devices

FASS in microchannels

0 5 10 15 20 25 300

1

2

3

4

5

6

X

time

Low conducti

vity fl

uid

Sample io

ns

Simply calculate mean fluid velocity, and electrophoretic velocity.Diffusion/dispersion limits the peak enhancement.

Page 22: Modeling flow and transport in  nanofluidic  devices

FASS in nanochannels

• Same idea, just a smaller channel.• Differences between micro and nano are quite

significant.

Page 23: Modeling flow and transport in  nanofluidic  devices

Experimental setup2 Channels: 250 nm x7 microns

1x9 microns

Page 24: Modeling flow and transport in  nanofluidic  devices

Raw data 10:1 conductivity ratio

Page 25: Modeling flow and transport in  nanofluidic  devices

Micro/nano comparison

10

Page 26: Modeling flow and transport in  nanofluidic  devices

Model

• Poisson-Nernst-Planck + Navier-Stokes• Use extreme aspect ratio to get simple

equations (strip of standard paper 1/8 inch wide, 40 feet long)

Page 27: Modeling flow and transport in  nanofluidic  devices

Full formulation 100+ years old

Concentration of positive salt ions,

Concentration of negative salt ions,

Concentration of sample ions,

G

Navier-Stokes for the fluid velocity vector,

Conservation of mass

Page 28: Modeling flow and transport in  nanofluidic  devices

Analysis procedure

• Make dimensionless, with separate scales for channel height, H, and length, L.

• Define • Throw out (carefully) terms with any power of in front

of them.• Solve the zeroth order problem.• Go back to equations and throw out terms with or

higher. • State the first order problem. • Integrate (or average) across the depth of the channel.

Page 29: Modeling flow and transport in  nanofluidic  devices

Zeroth order electrochemical equilibrium

Relative concentration at centerline, Conc. of positive salt ions = negative

Debye length/channel height. Constant ~ 0.1

Once potential is solved for, concentration of salt ions, conductivity, and charge density are known.

Integrate w/ B.C.

Page 30: Modeling flow and transport in  nanofluidic  devices

Proceeding to next order in

0

0

0

0

Enbunxt

n

Ebuxt

Ebux

xu

s

Flow is constant down the channel

Current is constant down the channel.

Conservation of electrical conductivity.

Conservation of sample species.

u is velocityρ is charge density E is electric fieldb is mobility (constant)

σ is electrical conductivity n is concentration of sampleBar denotes average taken across channel height

Page 31: Modeling flow and transport in  nanofluidic  devices

Assume distinct regions yields jump conditions

0 5 10 15 20 25 30-1

0

1

x

y

Velocity

-1

0

1

y

Sample ions

-1

0

1

y

Potential

High cond.

21

121

121122

0

)(

0

EbuEbudtdL

EbuEbuLLdtd

dxEbuxt

L

x=0 x=L

L1 L2High cond.Region 1

Low cond.Region 2

Page 32: Modeling flow and transport in  nanofluidic  devices

Total pressure & voltage drop

dx L1

0u

0 5 10 15 20 25 30-1

0

1

x

y

Velocity

-1

0

1

y

Sample ions

-1

0

1

y

Potential

High cond.L1 L2

High cond.Region 1

Low cond.Region 2

𝑢=−𝐸 𝜁 (1− 𝜙𝜁 )+ 𝑑𝑃𝑑𝑥 13

Zeroth order velocity field

Page 33: Modeling flow and transport in  nanofluidic  devices

Characteristics

0 5 10 15 20 25 300

1

2

3

4

5

6

X

time

1 micron

Enhancement =13 Enhancement =125

Low co

nductivit

y

0 5 10 15 20 25 300

1

2

3

4

5

6

Xtim

e

250 nm

Low co

nduc

tivity

Sample

ionsSa

mple ions

10:1 Conductivity ratio, 1:10mM concentration

Page 34: Modeling flow and transport in  nanofluidic  devices

Why is nanoscale different?

0 5 10 15 20 25 30-1

0

1

x

y

Velocity

-1

0

1

y

Sample ions

-1

0

1

y

Potential

High cond.

High cond.

High cond. High cond.

High cond.

High cond.Low cond.

Low cond.

Low cond.

X (mm)

y/H

y/H

y/H

Page 35: Modeling flow and transport in  nanofluidic  devices

Focusing of sample ions

- -

Low cond. buffer High cond. bufferHigh cond. bufferUσ

Us,lowUs,high

Debye length/Channel Height

Us,high

Us,low

Page 36: Modeling flow and transport in  nanofluidic  devices

Simple model to experiment

Simple model – 1D, single channel, no PDE, no free parameters

Debye length/Channel Height

Page 37: Modeling flow and transport in  nanofluidic  devices

Focusing of conductivity characteristicsfinite interface

0 5 10 15 20 25 300

1

2

3

4

5

6

X

time

Low co

nductivit

y

Page 38: Modeling flow and transport in  nanofluidic  devices

Shocks in background concentration

Mani, Zangle, and Santiago. Langmuir, 2009

Page 39: Modeling flow and transport in  nanofluidic  devices

Towards quantitative agreement

•Add diffusive effects (solve a 1D PDE)•All four channels and sequence of voltages is critical in setting the initial contents of channel, and time dependent electric field in measurement channel.

Page 40: Modeling flow and transport in  nanofluidic  devices

Model vs. experiment (16 kV/m)

Model

Exp.

250 nm 1 micron

Page 41: Modeling flow and transport in  nanofluidic  devices

Model vs. experiment (32 kV/m)

Model

Exp.

250 nm 1 micron

Page 42: Modeling flow and transport in  nanofluidic  devices

Conclusions

• Model is very simple, yet predicts all the key trends with no fit parameters.

• Future work– What is the upper limit?– Can it be useful?– More detailed model – better quantitative

agreement.

Page 43: Modeling flow and transport in  nanofluidic  devices

Untested predictions

Page 44: Modeling flow and transport in  nanofluidic  devices

Characteristics – 4 channels1 micron channel 250 nmchannel

Red – location of sampleBlue – location of low conductivity fluid

Page 45: Modeling flow and transport in  nanofluidic  devices