Multi-physics SEE modeling with MUSCA SEP · Multi-physics SEE modeling with MUSCA SEP 3 RADPRED2010 1st workshop 14-15 January Toulouse. Outline ... Example : the ICARE equipment

Multi-physics SEE modeling

with MUSCA SEP3

RADPRED2010 1st workshop 14-15 January Toulouse

Outline

• Physical bases of MUSCA SEP3

� Global approach, sequential modeling� Levels description

• Operational rate calculations� Operational calculation� Emerging effects� Anomaly expertise

• Synthesis and perspective


Introduction

→→→→ MUSCA SEP3

� Pragmatic & global approach based on physical mechanisms & sequential modeling

Why developing a new SEE predictive method ?� Operational rate: SEE sensitivity of the device considered in its material, radiation and operational environments� SEE anomaly analysis and dynamic operational rate

→ “space weather” problematic and forecasting rate� New and relevant methodologies for modern devices

� To investigate the rate trends induced by technological roadmap� To prevent the emerging effects


Outline: physical bases of MUSCA SEP3






Global approach, sequential modeling

Environment

Transport in materials

Interaction in device,e/h generations

e/h transport in SC, collection mechanisms

Circuit effects

SEE sensitivity modeling

Monte-Carlo simulation of radiation events

Electron hole pairs generationTransport carriers and charge collectionCircuit effect

Device and material environment (structure, shielding, package)

System modeling

σσσσ, SER Post processing


Layer 1: system modeling

Example : 6T SRAM bulk

Translation and symmetry rules

Elementary cell topology Memory (several Mbits)

Full description of the device on its material environment

Structure, shielding and package

Passivation-Metallization

S.C

Wafer


Layer 2: environment modeling

Cosmic, radiation belt, sporadic event (solar flare), neutron

Neutron (fast and thermal), proton, muons, pions

alpha emitter contamination

Heavy ion, proton, neutron, pion …

Space environment Atmospheric and ground environment

Intrinsic environment

Accelerated (test)environments

Need to model:

Radiationfield

� Isotropic, unidirectional or anisotropic� Ion species, proton, neutron� Mono-energetic or spectrum� Dynamic: sporadic events (solar flare)


Layer 3 & 4: interaction, transport and e/h generati on

GEANT4 SRIM −+−+−+−+−

+−+−

Particle/system interactions:� Energy loss during transport in structure, shielding and package� Secondary ions induced by nuclear reaction in S.C.� Energy loss in semiconductor by coulombic interaction

−+−+−+−+−

+−+−

+−−

++−−+−+

Radiationfield

Secondary ions induced by a nuclear interaction

Energy loss in matter, e/h pairs created in S.C.

Coulombic database:ion (1 → 92) in Si, Cu, Al, O, Si02, W, Ta (...)

Nuclear databases:Neutron - proton with Si, O, Cu and W (1MeV to 2 GeV)∑

ion

v A, Z,E,r

N Nucl. reac. E, range, LET


Layer 4: carrier generation in semiconductor

Objective of this layer: To model and quantify the carrier density deposited in the device (active semiconductor)for a given configuration issued from radiation events

n(x,y,z) : e/h pairs density in active semiconductor

−+

−+−+−+−+−

+−+−

+− +−−+−+

∑ion

v A, Z,E,r

Location in S.C. (MC process)

Database from SRIM Database from GEANT4

Nuclear reaction characteristics (MC process)

Next layers: Environment and transport in materials

+ −− ++ −− ++ −− +

heavy ion


Layer 5: carrier transport and charge collection (1 /3)

OffOn

Off On

Two ways: transient pulse OR charge collection→ SEE sensitivity model adapted for Monte-Carlo approaches

� Ambipolar and drift diffusions� Potential/impedance variations� Charge injection processes� Parasitic structure activation� …

Physical mechanisms

I(t) or Qcoll

simplified model

I

−+

−+−+−+−+−

+−+−

+− +−−+−+

I(t) or Qcoll

I(t) or Qcoll

I(t) or Qcoll

I(t) or Qcoll

Circuit model (layer 6)

Injection in Spice

TCAD & SPICE

I(t) or Qcoll

Multi-cell and multi collection



Qi

Drain

Qcoll = Σ ηi . Qi

� Ion track: series of local charges Qi along the target� Collection efficiency ηηηη: decreases with the distance to the collected zone

SEU charge model� Classical approach: RPP

� MUSCA SEP3 approach: collection efficiency concept

−+−+−+−+−

+−+−

+−−

++−−+−+

Collected charge by eachsensitive zone→ Multi-collection effects

Qcoll

Qcoll Qcoll

Qcoll



Qi

Drain � Ion track: series of local charges Qi along the target� Spherical ambipolar diffusion � Impact on potential variation� Dynamic properties: D(t) and v(t)

Transient model: ADDICT→ Advanced Dynamic DIffusion-Collection Transient model

)v ,E A, Z,,V ,S,N D(t), v(t),fct(t, (t)I ioniondddrainsubdrain

r=

Ion characteristicsStructure/device characteristics

MUSCA SEP3 ADDICTSEU I(t) model (criteria)SET in digital electronics (SPICE)SET in APS

Dynamic Model


Layer 6: Circuit effects

Objective of this calculation layer: To propose a simplified model accounting for the impact induced by the circuit level

Vdd Masse

I on

NMOS ON PMOS Off

I coll

Vnoeud 1�� Vnoeud 2��

Diff./Coll

nm

µm

Coupling effect

Multi collection

Injection in Spice

∑=zone collected :i

).state on/off type,n/p( icollcell QCQ

Examples: SRAM cell memory

OffOn

Off OnI(t)

I(t)

I(t)

I(t)

Simplified model


Outline: operational rate calculations



• Operational rate calculations� Operational calculation� Emerging effects� Anomaly expertise� Sporadic event analysis



Operational calculation (1/3)

Example : the ICARE equipment on-board SAC-CHitachi 628512 4T SRAM bulk

1E-10

1E-09

1E-08

1E-07

1E-06

0 20 40 60

LET in MeV.cm²/mg

SE

U c

ross

set

ion

in c

m²/

bit

MUSCA SEP3

Experiment

1E-15

1E-14

1E-13

1E-12

0 50 100

Proton energy in MeV

SE

U c

ross

sec

tion

in c

m²/

bit

MUSCA SEP3

Experiment

Structure analysis Technological analysis SEU ground test results

Low (3 mm)

High (3 cm)4Mbit

Technological SEU sensitivity

model


Operational calculation (2/3)

Thin (3 mm)

Thick (3 cm) 4Mbit

Technological SEU sensitivity model

In-flight rate (#/dev./day)

SEU /day/dev

SAC-C experiment

MUSCA SEP3

Total 1.1 1.24Heavy ion 0.16 0.19

Proton 0.94 1.05

Good agreement between on-board experiment and MUSCA SEP3 calculations� for both heavy ion and proton contributions !

Example : the ICARE equipment on-board SAC-CHitachi 628512 4T SRAM bulk


1E-15

1E-14

1E-13

1E-12

0 50 100 150 200

Proton energie (MeV)

Cro

ss s

ectio

n cm

²/bi

t

waferwafer + packagewafer + package + 3mmwafer + package + 3cm

Operational calculations (3/3)

Structure (shileding) and environments characteristics (angular distribution) with protons & a 90nm techno

1E-15

1E-14

1E-13

1E-12

0 50 100 150 200

Proton energy (MeV)

Cro

ss s

ectio

n cm

²/bi

t

no shielding

no uniform shielding

uniform shielding (3cm)

uniform shielding (1cm)

Uni-directional flux Isotropic flux

• Very important impact on threshold • Need to describe the non-uniform structure/shielding• Impact induced by the directional properties (threshold and amplitude)

� Factor of 4 on predicted rates between classical and MUSCA approaches (SAC-C orbit considering resp. w/o and w MBU)


Operational calculation: emerging effect analysis

Direct ionization of proton impacts on SER…. and on the requirements for evaluating the SEU sensitivity

Various material environments

Emerging effect for nanometrictechnologies: the trend

The material environment is the key parameter→ Define the sensitive proton spectrum energy range

1

10

100

Device Dev. + 3mm Dev. + 1cm Dev. + 3cm Dev. + 6cmS

ingl

e E

vent

Rat

e in

SE

U /d

ay/M

bit

AP8-min (nuclear process) + Cosmic

AP8-min (direct ionization process)

Total SER

88% to total SER

58%

Heavy ion

Nuclear proton

Ionizing proton

130nm 25 % 75 % 0 %

90nm 23 % 59 % 18 %

65 nm 1 % 19 % 75 % Classical approach: cosmic + nuclear proton

wafer

Structure/shielding

package

65nm


1E-17

1E-16

1E-15

1E-14

1E-13

0 200 400 600 800 1000

Proton energy

SE

U c

ross

sec

tion

cm²/b

it

With Plug W

Without Plug W

Operational calculation: anomaly expertise

Example: “hard” devices� Ground tests: heavy ion low SEU sensitivity

→ very low SEU sensitivity to proton

� Operational data: no SEU induced by cosmics but by protons (heavy recoils)

6T SRAM SOI - Qcrit = 100 fC

High energy proton test

requirements !!!

Needs for describing the “system-device” with multi material approach


Outline: synthesis and perspective






Synthesis

Needs for taking into account• An adapted and realistic environment model

� Isotropic/mono-directional, spectrum/mono-energy

� Dynamic and/or static,

• A 3-dimentional structure and device description� Shielding, structure and device (uniform and non uniform)

� Multi-material (Si, SiO2, W, Cu, Al …)

• Nuclear and coulombic interactions� Do not forget the new problematics! (ex: direct ionization of proton)

• Adapted SEE sensitivity models� Specific for each effect and/or device type

� Dynamic and/or static effect

� Thermal effect

• Circuit effect model


Perspective: post processing and effect calculation s

VHDL⇒

Research activities

Charge or I(t) histogram

Post processing

System modeling

Able to investigate:► Operational conditions► Ground conditions

Output databases

Environment

SER

B Env.cal.

A Env.exp. σσ ⇒

Transport in materials

Interaction in device,e/h generations

e/h transport in SC, collection mechanisms

MUSCA SEP3

SEE sensitivity model from ground test

Proton

Neutron

Heavy ion14 8 2 5 818 6 3 2 962 3 963 8 9 2628363256 325693256 9832561482581863 2962396389 2 6 2 836 3 2 5632 56932 5698 32561 4825 8186329623 96389 2628 36 32563 25 6932 569 83 25 61482 5818632962396 3892628363256325 693 25 69 83 2514 825 8186 3 62396 389 26 2 3632 56 32 5 69 32 61 482581 863 96 2396 389 262 83632563 25 69 32 569 832 561 482 581 8632 962396 3892628 36325 632 69 32 5 69 83 56 14825 818 6329623 96 8926 28 3256 32 56 9 32 5

Multi-physic model

Static and dynamic

SPICE⇒

SEEσ

RADPRED2010 1st worshop 14-15 January Toulouse

Documents

Multi-physics SEE modeling with MUSCA SEP · Multi-physics SEE modeling with MUSCA SEP 3 RADPRED2010 1st workshop 14-15 January Toulouse. Outline ... Example : the ICARE equipment