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Multilayer Ceramic Technologies for Dielectric Barrier Discharge Plasma

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- PC / Server System

- Quartz Resonator- MEMS

- Satellite- High-end Computer

- CMOS / CCD - Cellular Phone- Mobile Handset

- Automotive

Ceramic Multilayer Technology

1. Kyocera’s Experience - Examples

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Multilayer Ceramic Substrate

For High Reliability Circuits(Concept Example, Cut Model)

Top Layer (Components Mounting)

2nd/3rd Layer(Internal Signal Pattern)

4th Layer (Power/Ground Pattern)

Internal Via Connection

Via

< Cross Section View >

Ceramics

Pattern

Top Layer

2nd Layer3rd Layer4th Layer

Ceramic Multilayer Technology

2. Multilayer Architecture

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Ceramic Multilayer Technology

3. Process Flow

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Potential applications of DBD plasmas

Surface TreatmentChemical

ReformingLighting

Biological

ReactionCleaning Coating Etching Change surface

Properties

Industrial

Material

Processing

Metal

Plastic

Glass/Ceramics

Textile

Non-woven

Materials

Paper

Paint & glue

Fibers

Powders

Display & Lighting

Medical

Environmental

Management

Water

Air

Flue gas

Textiles

•DTU‘s DeNox project

Candidate applications by Industry and Process

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Line Width/Gap:1.0mm

Dielectric Thickness

on Electrode

：0.15 (mm)

Line Width/Gap:0.5mm

Line Width/Gap:1.0mm Line Width/Gap:0.5mm

Discharge Power：56.0 (W)

Discharge Power：48.1 (W)

Substrate: 76×60(mm)

Dielectric Thickness

on Electrode

：0.15 (mm)

Substrate: 76×60(mm)

Design Options for Plasma Generation

1. Comb Pattern

Ceramic Barrier Layer

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Hole Diameter: φ0.6mm

Hole-Hole Pitch：2.1(mm)

Hole-Metal Gap：0.3(mm)

Metal-Metal Gap：0.5(mm)

Top Inner 1 Inner 2

Hole Diameter: φ0.8mm

Top Inner 1 Inner 2

Substrate: 30×30(mm)

Substrate: 30×30(mm)

Hole-Hole Pitch：2.3(mm)

Hole-Metal Gap：0.3(mm)

Metal-Metal Gap：0.5(mm)

Discharge Power：11.1 (W)

Discharge Power：14.4 (W)

Hole Diameter: φ0.6mm Hole Diameter: φ0.8mm

2. Honeycomb Pattern (Substrate with Open Holes)

Ceramic Barrier Layer

Design Options for Plasma Generation

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Discharge Power：153.3(W)

Dielectric Thickness 0.5mmSubstrate: 120×40(mm)

Gap：1(mm)

Dielectric Thickness 0.5mm

Substrate: 120×40(mm)

Gap：1(mm)

Dielectric Thickness 1.0mm

Dielectric Thickness 1.0mm

Discharge Power：66.5 (W)

3. Parallel Flat Substrates Type

Ceramic Barrier Layer

Design Options for Plasma Generation

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■ Material Advantages

Thermal

・ High Heat Durability

・ High Heat Dissipation

Electrical

・ High Insulation Resistance

・ Low Dielectric Loss

Chemical

・ Good Chemical Stability

Mechanical

・ High Mechanical Strength

■ Multilayer Structural Advantages

Buried Electrode

(Metal-Ceramic Co-fire Technology)

・ No Oxidation of Electrode

Design Flexibility

・ Variety of Dielectric Layer Thickness

and Number of Layers

・ Multilayer Internal Conductor

with Flexible (3D) Interconnection

Added Electrode Function

・ Electro-Static Dust Collection

・ Surface Cleaning by Non Thermal

Plasma and Buried Heater

High Reliability Metal Parts Brazing

to Ceramics

Advantages of Kyocera’s Technology

1. Material & Multilayer Structure

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Pin Lead

Ball Pipe

PIN (Fe-Ni-Co) Ceramic Lead (Fe-Ni-Co) Ceramic

Ball (Fe-Ni-Co,Cu) Pipe (Fe-Ni-Co,Cu)Ceramic Ceramic

Advantages of Kyocera’s Technology

2. Metal to Ceramic Brazing Technology

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Kyocera Multilayer Ceramic Package Material Properties

1MHz 2 GHz 1MHz 2 GHz

A473 9.1 8.5 5 10 6.9 18 400 270 W, Mo

A440 9.8 – 24 – 7.1 14 400 310 W, Mo

A443 9.6 – 5 – 6.9 18 460 310 W, Mo

AO600 9.0 8.8 10 21 7.2 15 400 260 CuW

AO700 9.4 9.2 6 6 7.2 21 620 315 Mo

AlN

AN242 8.7 8.6 1 170 4.7 150 400 320 W

GL940 – 18.7 – 2.5 10.7 3.5 220 188 Ag

GL950 – 9.4 – 14 8.5 4.1 400 173 Ag

GL330 7.8 7.7 4 5 8.2 4.3 400 178 Cu

GL570 5.6 5.7 3 7 3.4 2.8 200 128 Cu

GL771 5.3 5.2 8 36 12.3 2.0 170 74 Cu

CERAMIC

MATERIAL

OPTIONS

CONDUCTOR

MATERIAL

Young's

Modulus of

Elasticity

(GPa)

Thermal

Conductivity

(W/mK)

ELECTRICAL

Dielectric Constant CTE (ppm/K)

(RT-400oC)

LT

CC

Alu

min

a (

Al2

O3

)

MECHANICALTHERMAL

Dissipation Factor

(x10E-4)Flexural

Strength

(MPa)

Note: Material characteristics mentioned above are typical values.

These values may change upon further improvement or modification of these materials and processes.

: Material for Plasma Application

Appendix -