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1 P/N:PM1499 REV. 1.0, APR. 28, 2009 MX29GL256E H/L MX29GL256E H/L DATASHEET

MX29GL256E H/L DATASHEET - Future Electronics · 2009. 6. 18. · 128 64 SA78 01001110 4E0000h-4EFFFFh 128 64 SA79 01001111 4F0000h-4FFFFFh 128 64 SA80 01010000 500000h-50FFFFh 128

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Page 1: MX29GL256E H/L DATASHEET - Future Electronics · 2009. 6. 18. · 128 64 SA78 01001110 4E0000h-4EFFFFh 128 64 SA79 01001111 4F0000h-4FFFFFh 128 64 SA80 01010000 500000h-50FFFFh 128

1P/N:PM1499 REV. 1.0, APR. 28, 2009

MX29GL256E H/L

MX29GL256E H/LDATASHEET

Page 2: MX29GL256E H/L DATASHEET - Future Electronics · 2009. 6. 18. · 128 64 SA78 01001110 4E0000h-4EFFFFh 128 64 SA79 01001111 4F0000h-4FFFFFh 128 64 SA80 01010000 500000h-50FFFFh 128

2P/N:PM1499 REV. 1.0, APR. 28, 2009

MX29GL256E H/L

FEATURES

GENERAL FEATURES• PowerSupplyOperation -2.7to3.6voltforread,erase,andprogramoperations -VI/OvoltagemusttightwithVCC -VI/O=VCC=2.7V~3.6V• Byte/Wordmodeswitchable -33,554,432x8/16,777,216x16• 64KW/128KBuniformsectorarchitecture -MX29GL256EH/L:256equalsectors• 16-byte/8-wordpagereadbuffer• 64-byte/32-wordwritebuffer• Extra128-wordsectorforsecurity -Featuresfactorylockedandidentifiable,andcustomerlockable• Advancedsectorprotectionfunction(PersifentandPasswordProtect)• Latch-upprotectedto100mAfrom-1Vto1.5xVcc• LowVccwriteinhibit:Vcc≤VLKO• CompatiblewithJEDECstandard -PinoutandsoftwarecompatibletosinglepowersupplyFlash• Deeppowerdownmode

PERFORMANCE• HighPerformance -Fastaccesstime: -MX29GL256EH/L:100ns(VCC=2.7~3.6V),90ns(VCC=3.0~3.6V) -Pageaccesstime:25ns -Fastprogramtime:11us/word -Fasterasetime:0.6s/sector• LowPowerConsumption -Lowactivereadcurrent:30mA(typical)at5MHz -Lowstandbycurrent:30uA(typical)• Typical100,000erase/programcycle• 20yearsdataretention

SOFTWARE FEATURES• Program/EraseSuspend&Program/EraseResume -Suspendssector eraseoperation to readdata fromorprogramdata toanother sectorwhich is not beingerased

-Suspendssectorprogramoperationtoreaddatafromanothersectorwhichisnotbeingprogram• StatusReply -Data#Polling&Togglebitsprovidedetectionofprogramanderaseoperationcompletion• SupportCommonFlashInterface(CFI)

HARDWARE FEATURES• Ready/Busy#(RY/BY#)Output -Providesahardwaremethodofdetectingprogramanderaseoperationcompletion• HardwareReset(RESET#)Input -Providesahardwaremethodtoresettheinternalstatemachinetoreadmode• WP#/ACCinputpin -Hardwarewriteprotectpin/Providesacceleratedprogramcapability

PACKAGE• 56-PinTSOP• 64-BallFBGA(10mmx13mm)• 64-BallLFBGA(11mmx13mm)• 70-PinSSOP• All Pb-free devices are RoHS Compliant

SINGLE VOLTAGE 3V ONLY FLASH MEMORY

Page 3: MX29GL256E H/L DATASHEET - Future Electronics · 2009. 6. 18. · 128 64 SA78 01001110 4E0000h-4EFFFFh 128 64 SA79 01001111 4F0000h-4FFFFFh 128 64 SA80 01010000 500000h-50FFFFh 128

3P/N:PM1499 REV. 1.0, APR. 28, 2009

MX29GL256E H/L

PIN CONFIGURATION

56 TSOP

64 FBGA/64 LFBGA

A B C D E F G H

NC8

7

6

5

4

3

2

1

A22 A23 VIO NCNC NC

A13 A12 A14 A15 A16 BYTE# Q15/A-1

A9 A8 A10 A11 Q7 Q14 Q13 Q6

WE# A21 A19RES-ET#

Q5 Q12 VCC Q4

WP#/ACC

A18 A20 Q2 Q10 Q11RY/BY#

A7 A17 A6 A5 Q0 Q8 Q9 Q1

Q3

A3 A4 A2 A1 A0 CE# OE# GND

GND

GND

NC NC NC NC NC VIO NC NC

A23A22A15A14A13A12A11A10

A9A8

A19A20

WE#RESET#

A21WP#/ACC

RY/BY#A18A17

A7A6A5A4A3A2A1NCNC

12345678910111213141516171819202122232425262728

NCNCA16BYTE#GNDQ15/A-1Q7Q14Q6Q13Q5Q12Q4VCCQ11Q3Q10Q2Q9Q1Q8Q0OE#GNDCE#A0NCVI/O

56555453525150494847464544434241403938373635343332313029

Page 4: MX29GL256E H/L DATASHEET - Future Electronics · 2009. 6. 18. · 128 64 SA78 01001110 4E0000h-4EFFFFh 128 64 SA79 01001111 4F0000h-4FFFFFh 128 64 SA80 01010000 500000h-50FFFFh 128

4P/N:PM1499 REV. 1.0, APR. 28, 2009

MX29GL256E H/L

70 SSOP

PIN DESCRIPTIONSYMBOL PIN NAMEA0~A23 AddressInputQ0~Q14 DataInputs/OutputsQ15/A-1 Q15(WordMode)/LSBaddr(ByteMode)CE# ChipEnableInputWE# WriteEnableInputOE# OutputEnableInput

RESET# HardwareResetPin,ActiveLow

WP#/ACC* HardwareWriteProtect/ProgrammingAccelerationinput

RY/BY# Read/BusyOutputBYTE# Selects8bitsor16bitsmodeVCC +3.0VsinglepowersupplyGND DeviceGroundNC PinNotConnectedInternallyVI/O PowerSupplyforInput/Output

LOGIC SYMBOL

16 or 8Q0-Q15

(A-1)

RY/BY#

A0-A23

CE#

OE#

WE#

RESET#

WP#/ACC

BYTE#

VI/O

24

234567891011121314151617181920212223242526272829303132333435

7069686766656463626160595857565554535251504948474645444342414039383736

A20A21A18A17OE#

A6A5A4A3A2A1A0

BYTE#GND

NCNCNCNCNCNC

GNDNC

CE#GND

NCA7Q0Q8Q1Q9Q2

Q10Q3

Q11NC

A19A8A15A10A11A12A13A14A9A16WE#NCA22A23GNDNCNCWP#/ACCNCNCNCGNDRESET#GNDGNDQ15/A-1Q7Q14Q6Q13Q5Q12Q4VCCVCC

Notes:1.WP#/ACChasinternalpullup.2.VI/OvoltagemusttightwithVCC.VI/O=VCC=2.7V~3.6V.

Page 5: MX29GL256E H/L DATASHEET - Future Electronics · 2009. 6. 18. · 128 64 SA78 01001110 4E0000h-4EFFFFh 128 64 SA79 01001111 4F0000h-4FFFFFh 128 64 SA80 01010000 500000h-50FFFFh 128

5P/N:PM1499 REV. 1.0, APR. 28, 2009

MX29GL256E H/L

BLOCK DIAGRAM

CONTROLINPUTLOGIC

PROGRAM/ERASE

HIGH VOLTAGE

WRITE

STATE

MACHINE

(WSM)

STATE

REGISTERFLASHARRAY

X-D

EC

OD

ER

ADDRESS

LATCH

AND

BUFFER Y-PASS GATE

Y-DE

CO

DE

R

ARRAYSOURCE

HVCOMMANDDATA

DECODER

COMMAND

DATA LATCH

I/O BUFFER

PGMDATA

HV

PROGRAMDATA LATCH

SENSEAMPLIFIER

Q0-Q15/A-1

A0-AM

AM: MSB address

CE#OE#WE#

RESET#BYTE#

WP#/ACC

Page 6: MX29GL256E H/L DATASHEET - Future Electronics · 2009. 6. 18. · 128 64 SA78 01001110 4E0000h-4EFFFFh 128 64 SA79 01001111 4F0000h-4FFFFFh 128 64 SA80 01010000 500000h-50FFFFh 128

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MX29GL256E H/L

BLOCK DIAGRAM DESCRIPTION TheblockdiagramonPage5illustratesasimplifiedarchitectureofthisdevice.Eachblockintheblockdiagramrepresentsoneormorecircuitmodulesintherealchipusedtoaccess,erase,program,andreadthememoryarray.

The"CONTROLINPUTLOGIC"blockreceives inputpinsCE#,OE#,WE#,RESET#,BYTE#,andWP#/ACC.Itcreatesinternaltimingcontrolsignalsaccordingtotheinputpinsandoutputstothe"ADDRESSLATCHANDBUFFER"to latchtheexternaladdresspinsA0-AM(A23).Theinternaladdressesareoutput fromthisblocktothemainarrayanddecoderscomposedof"X-DECODER","Y-DECODER","Y-PASSGATE",AND"FLASHAR-RAY".TheX-DECODERdecodestheword-linesoftheflasharray,whiletheY-DECODERdecodesthebit-linesoftheflasharray.Thebitlinesareelectricallyconnectedtothe"SENSEAMPLIFIER"and"PGMDATAHV"se-lectivelythroughtheY-PASSGATES.SENSEAMPLIFIERSareusedtoreadoutthecontentsoftheflashmemo-ry,whilethe"PGMDATAHV"blockisusedtoselectivelydeliverhighpowertobit-linesduringprogramming.The"I/OBUFFER"controlstheinputandoutputontheQ0-Q15/A-1pads.Duringreadoperation,theI/OBUFFERreceivesdata fromSENSEAMPLIFIERSanddrives theoutputpadsaccordingly. In the lastcycleofprogramcommand,theI/OBUFFERtransmitsthedataonQ0-Q15/A-1to"PROGRAMDATALATCH",whichcontrolsthehighpowerdriversin"PGMDATAHV"toselectivelyprogramthebitsinawordorbyteaccordingtotheuserin-putpattern.

The"PROGRAM/ERASEHIGHVOLTAGE"blockcomprisesthecircuitstogenerateanddeliverthenecessaryhighvoltagetotheX-DECODER,FLASHARRAY,and"PGMDATAHV"blocks.Thelogiccontrolmodulecom-prisesof the "WRITESTATEMACHINE,WSM", "STATEREGISTER", "COMMANDDATADECODER", and"COMMANDDATALATCH".WhentheuserissuesacommandbytogglingWE#,thecommandonQ0-Q15/A-1is latched in theCOMMANDDATALATCHand isdecodedby theCOMMANDDATADECODER.TheSTATEREGISTER receives thecommandand records thecurrentstateof thedevice.TheWSM implements the in-ternalalgorithmsforprogramoreraseaccordingtothecurrentcommandstatebycontrollingeachblockintheblockdiagram.

ARRAY ARCHITECTURE ThemainflashmemoryarraycanbeorganizedasBytemode(x8)orWordmode(x16).Thedetailsofthead-dressrangesandthecorrespondingsectoraddressesareshowninTable1.

Page 7: MX29GL256E H/L DATASHEET - Future Electronics · 2009. 6. 18. · 128 64 SA78 01001110 4E0000h-4EFFFFh 128 64 SA79 01001111 4F0000h-4FFFFFh 128 64 SA80 01010000 500000h-50FFFFh 128

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MX29GL256E H/L

Table 1. MX29GL256EH/L SECTOR ARCHITECTURE

BLOCK STRUCTURE

Sector SizeSector Sector Address

A23-A16(x16)

Address RangeKbytes Kwords128 64 SA0 00000000 000000h-00FFFFh128 64 SA1 00000001 010000h-01FFFFh128 64 SA2 00000010 020000h-02FFFFh128 64 SA3 00000011 030000h-03FFFFh128 64 SA4 00000100 040000h-04FFFFh128 64 SA5 00000101 050000h-05FFFFh128 64 SA6 00000110 060000h-06FFFFh128 64 SA7 00000111 070000h-07FFFFh128 64 SA8 00001000 080000h-08FFFFh128 64 SA9 00001001 090000h-09FFFFh128 64 SA10 00001010 0A0000h-0AFFFFh128 64 SA11 00001011 0B0000h-0BFFFFh128 64 SA12 00001100 0C0000h-0CFFFFh128 64 SA13 00001101 0D0000h-0DFFFFh128 64 SA14 00001110 0E0000h-0EFFFFh128 64 SA15 00001111 0F0000h-0FFFFFh128 64 SA16 00010000 100000h-10FFFFh128 64 SA17 00010001 110000h-11FFFFh128 64 SA18 00010010 120000h-12FFFFh128 64 SA19 00010011 130000h-13FFFFh128 64 SA20 00010100 140000h-14FFFFh128 64 SA21 00010101 150000h-15FFFFh128 64 SA22 00010110 160000h-16FFFFh128 64 SA23 00010111 170000h-17FFFFh128 64 SA24 00011000 180000h-18FFFFh128 64 SA25 00011001 190000h-19FFFFh128 64 SA26 00011010 1A0000h-1AFFFFh128 64 SA27 00011011 1B0000h-1BFFFFh128 64 SA28 00011100 1C0000h-1CFFFFh128 64 SA29 00011101 1D0000h-1DFFFFh128 64 SA30 00011110 1E0000h-1EFFFFh128 64 SA31 00011111 1F0000h-1FFFFFh128 64 SA32 00100000 200000h-20FFFFh128 64 SA33 00100001 210000h-21FFFFh128 64 SA34 00100010 220000h-22FFFFh128 64 SA35 00100011 230000h-23FFFFh128 64 SA36 00100100 240000h-24FFFFh128 64 SA37 00100101 250000h-25FFFFh128 64 SA38 00100110 260000h-26FFFFh128 64 SA39 00100111 270000h-27FFFFh

Page 8: MX29GL256E H/L DATASHEET - Future Electronics · 2009. 6. 18. · 128 64 SA78 01001110 4E0000h-4EFFFFh 128 64 SA79 01001111 4F0000h-4FFFFFh 128 64 SA80 01010000 500000h-50FFFFh 128

8P/N:PM1499 REV. 1.0, APR. 28, 2009

MX29GL256E H/L

Sector SizeSector Sector Address

A23-A16(x16)

Address RangeKbytes Kwords128 64 SA40 00101000 280000h-28FFFFh128 64 SA41 00101001 290000h-29FFFFh128 64 SA42 00101010 2A0000h-2AFFFFh128 64 SA43 00101011 2B0000h-2BFFFFh128 64 SA44 00101100 2C0000h-2CFFFFh128 64 SA45 00101101 2D0000h-2DFFFFh128 64 SA46 00101110 2E0000h-2EFFFFh128 64 SA47 00101111 2F0000h-2FFFFFh128 64 SA48 00110000 300000h-30FFFFh128 64 SA49 00110001 310000h-31FFFFh128 64 SA50 00110010 320000h-32FFFFh128 64 SA51 00110011 330000h-33FFFFh128 64 SA52 00110100 340000h-34FFFFh128 64 SA53 00110101 350000h-35FFFFh128 64 SA54 00110110 360000h-36FFFFh128 64 SA55 00110111 370000h-37FFFFh128 64 SA56 00111000 380000h-38FFFFh128 64 SA57 00111001 390000h-39FFFFh128 64 SA58 00111010 3A0000h-3AFFFFh128 64 SA59 00111011 3B0000h-3BFFFFh128 64 SA60 00111100 3C0000h-3CFFFFh128 64 SA61 00111101 3D0000h-3DFFFFh128 64 SA62 00111110 3E0000h-3EFFFFh128 64 SA63 00111111 3F0000h-3FFFFFh128 64 SA64 01000000 400000h-40FFFFh128 64 SA65 01000001 410000h-41FFFFh128 64 SA66 01000010 420000h-42FFFFh128 64 SA67 01000011 430000h-43FFFFh128 64 SA68 01000100 440000h-44FFFFh128 64 SA69 01000101 450000h-45FFFFh128 64 SA70 01000110 460000h-46FFFFh128 64 SA71 01000111 470000h-47FFFFh128 64 SA72 01001000 480000h-48FFFFh128 64 SA73 01001001 490000h-49FFFFh128 64 SA74 01001010 4A0000h-4AFFFFh128 64 SA75 01001011 4B0000h-4BFFFFh128 64 SA76 01001100 4C0000h-4CFFFFh128 64 SA77 01001101 4D0000h-4DFFFFh128 64 SA78 01001110 4E0000h-4EFFFFh128 64 SA79 01001111 4F0000h-4FFFFFh128 64 SA80 01010000 500000h-50FFFFh128 64 SA81 01010001 510000h-51FFFFh

Page 9: MX29GL256E H/L DATASHEET - Future Electronics · 2009. 6. 18. · 128 64 SA78 01001110 4E0000h-4EFFFFh 128 64 SA79 01001111 4F0000h-4FFFFFh 128 64 SA80 01010000 500000h-50FFFFh 128

9P/N:PM1499 REV. 1.0, APR. 28, 2009

MX29GL256E H/L

Sector SizeSector Sector Address

A23-A16(x16)

Address RangeKbytes Kwords128 64 SA82 01010010 520000h-52FFFFh128 64 SA83 01010011 530000h-53FFFFh128 64 SA84 01010100 540000h-54FFFFh128 64 SA85 01010101 550000h-55FFFFh128 64 SA86 01010110 560000h-56FFFFh128 64 SA87 01010111 570000h-57FFFFh128 64 SA88 01011000 580000h-58FFFFh128 64 SA89 01011001 590000h-59FFFFh128 64 SA90 01011010 5A0000h-5AFFFFh128 64 SA91 01011011 5B0000h-5BFFFFh128 64 SA92 01011100 5C0000h-5CFFFFh128 64 SA93 01011101 5D0000h-5DFFFFh128 64 SA94 01011110 5E0000h-5EFFFFh128 64 SA95 01011111 5F0000h-5FFFFFh128 64 SA96 01100000 600000h-60FFFFh128 64 SA97 01100001 610000h-61FFFFh128 64 SA98 01100010 620000h-62FFFFh128 64 SA99 01100011 630000h-63FFFFh128 64 SA100 01100100 640000h-64FFFFh128 64 SA101 01100101 650000h-65FFFFh128 64 SA102 01100110 660000h-66FFFFh128 64 SA103 01100111 670000h-67FFFFh128 64 SA104 01101000 680000h-68FFFFh128 64 SA105 01101001 690000h-69FFFFh128 64 SA106 01101010 6A0000h-6AFFFFh128 64 SA107 01101011 6B0000h-6BFFFFh128 64 SA108 01101100 6C0000h-6CFFFFh128 64 SA109 01101101 6D0000h-6DFFFFh128 64 SA110 01101110 6E0000h-6EFFFFh128 64 SA111 01101111 6F0000h-6FFFFFh128 64 SA112 01110000 700000h-70FFFFh128 64 SA113 01110001 710000h-71FFFFh128 64 SA114 01110010 720000h-72FFFFh128 64 SA115 01110011 730000h-73FFFFh128 64 SA116 01110100 740000h-74FFFFh128 64 SA117 01110101 750000h-75FFFFh128 64 SA118 01110110 760000h-76FFFFh128 64 SA119 01110111 770000h-77FFFFh128 64 SA120 01111000 780000h-78FFFFh128 64 SA121 01111001 790000h-79FFFFh128 64 SA122 01111010 7A0000h-7AFFFFh128 64 SA123 01111011 7B0000h-7BFFFFh

Page 10: MX29GL256E H/L DATASHEET - Future Electronics · 2009. 6. 18. · 128 64 SA78 01001110 4E0000h-4EFFFFh 128 64 SA79 01001111 4F0000h-4FFFFFh 128 64 SA80 01010000 500000h-50FFFFh 128

10P/N:PM1499 REV. 1.0, APR. 28, 2009

MX29GL256E H/L

Sector SizeSector Sector Address

A23-A16(x16)

Address RangeKbytes Kwords128 64 SA124 01111100 7C0000h-7CFFFFh128 64 SA125 01111101 7D0000h-7DFFFFh128 64 SA126 01111110 7E0000h-7EFFFFh128 64 SA127 01111111 7F0000h-7FFFFFh128 64 SA128 10000000 800000h-80FFFFh128 64 SA129 10000001 810000h-81FFFFh128 64 SA130 10000010 820000h-82FFFFh128 64 SA131 10000011 830000h-83FFFFh128 64 SA132 10000100 840000h-84FFFFh128 64 SA133 10000101 850000h-85FFFFh128 64 SA134 10000110 860000h-86FFFFh128 64 SA135 10000111 870000h-87FFFFh128 64 SA136 10001000 880000h-88FFFFh128 64 SA137 10001001 890000h-89FFFFh128 64 SA138 10001010 8A0000h-8AFFFFh128 64 SA139 10001011 8B0000h-8BFFFFh128 64 SA140 10001100 8C0000h-8CFFFFh128 64 SA141 10001101 8D0000h-8DFFFFh128 64 SA142 10001110 8E0000h-8EFFFFh128 64 SA143 10001111 8F0000h-8FFFFFh128 64 SA144 10010000 900000h-90FFFFh128 64 SA145 10010001 910000h-91FFFFh128 64 SA146 10010010 920000h-92FFFFh128 64 SA147 10010011 930000h-93FFFFh128 64 SA148 10010100 940000h-94FFFFh128 64 SA149 10010101 950000h-95FFFFh128 64 SA150 10010110 960000h-96FFFFh128 64 SA151 10010111 970000h-97FFFFh128 64 SA152 10011000 980000h-98FFFFh128 64 SA153 10011001 990000h-99FFFFh128 64 SA154 10011010 9A0000h-9AFFFFh128 64 SA155 10011011 9B0000h-9BFFFFh128 64 SA156 10011100 9C0000h-9CFFFFh128 64 SA157 10011101 9D0000h-9DFFFFh128 64 SA158 10011110 9E0000h-9EFFFFh128 64 SA159 10011111 9F0000h-9FFFFFh128 64 SA160 10100000 A00000h-A0FFFFh128 64 SA161 10100001 A10000h-A1FFFFh128 64 SA162 10100010 A20000h-A2FFFFh128 64 SA163 10100011 A30000h-A3FFFFh128 64 SA164 10100100 A40000h-A4FFFFh128 64 SA165 10100101 A50000h-A5FFFFh

Page 11: MX29GL256E H/L DATASHEET - Future Electronics · 2009. 6. 18. · 128 64 SA78 01001110 4E0000h-4EFFFFh 128 64 SA79 01001111 4F0000h-4FFFFFh 128 64 SA80 01010000 500000h-50FFFFh 128

11P/N:PM1499 REV. 1.0, APR. 28, 2009

MX29GL256E H/L

Sector SizeSector Sector Address

A23-A16(x16)

Address RangeKbytes Kwords128 64 SA166 10100110 A60000h-A6FFFFh128 64 SA167 10100111 A70000h-A7FFFFh128 64 SA168 10101000 A80000h-A8FFFFh128 64 SA169 10101001 A90000h-A9FFFFh128 64 SA170 10101010 AA0000h-AAFFFFh128 64 SA171 10101011 AB0000h-ABFFFFh128 64 SA172 10101100 AC0000h-ACFFFFh128 64 SA173 10101101 AD0000h-ADFFFFh128 64 SA174 10101110 AE0000h-AEFFFFh128 64 SA175 10101111 AF0000h-AFFFFFh128 64 SA176 10110000 B00000h-B0FFFFh128 64 SA177 10110001 B10000h-B1FFFFh128 64 SA178 10110010 B20000h-B2FFFFh128 64 SA179 10110011 B30000h-B3FFFFh128 64 SA180 10110100 B40000h-B4FFFFh128 64 SA181 10110101 B50000h-B5FFFFh128 64 SA182 10110110 B60000h-B6FFFFh128 64 SA183 10110111 B70000h-B7FFFFh128 64 SA184 10111000 B80000h-B8FFFFh128 64 SA185 10111001 B90000h-B9FFFFh128 64 SA186 10111010 BA0000h-BAFFFFh128 64 SA187 10111011 BB0000h-BBFFFFh128 64 SA188 10111100 BC0000h-BCFFFFh128 64 SA189 10111101 BD0000h-BDFFFFh128 64 SA190 10111110 BE0000h-BEFFFFh128 64 SA191 10111111 BF0000h-BFFFFFh128 64 SA192 11000000 C00000h-C0FFFFh128 64 SA193 11000001 C10000h-C1FFFFh128 64 SA194 11000010 C20000h-C2FFFFh128 64 SA195 11000011 C30000h-C3FFFFh128 64 SA196 11000100 C40000h-C4FFFFh128 64 SA197 11000101 C50000h-C5FFFFh128 64 SA198 11000110 C60000h-C6FFFFh128 64 SA199 11000111 C70000h-C7FFFFh128 64 SA200 11001000 C80000h-C8FFFFh128 64 SA201 11001001 C90000h-C9FFFFh128 64 SA202 11001010 CA0000h-CAFFFFh128 64 SA203 11001011 CB0000h-CBFFFFh128 64 SA204 11001100 CC0000h-CCFFFFh128 64 SA205 11001101 CD0000h-CDFFFFh128 64 SA206 11001110 CE0000h-CEFFFFh128 64 SA207 11001111 CF0000h-CFFFFFh

Page 12: MX29GL256E H/L DATASHEET - Future Electronics · 2009. 6. 18. · 128 64 SA78 01001110 4E0000h-4EFFFFh 128 64 SA79 01001111 4F0000h-4FFFFFh 128 64 SA80 01010000 500000h-50FFFFh 128

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MX29GL256E H/L

Sector SizeSector Sector Address

A23-A16(x16)

Address RangeKbytes Kwords128 64 SA208 11010000 D00000h-D0FFFFh128 64 SA209 11010001 D10000h-D1FFFFh128 64 SA210 11010010 D20000h-D2FFFFh128 64 SA211 11010011 D30000h-D3FFFFh128 64 SA212 11010100 D40000h-D4FFFFh128 64 SA213 11010101 D50000h-D5FFFFh128 64 SA214 11010110 D60000h-D6FFFFh128 64 SA215 11010111 D70000h-D7FFFFh128 64 SA216 11011000 D80000h-D8FFFFh128 64 SA217 11011001 D90000h-D9FFFFh128 64 SA218 11011010 DA0000h-DAFFFFh128 64 SA219 11011011 DB0000h-DBFFFFh128 64 SA220 11011100 DC0000h-DCFFFFh128 64 SA221 11011101 DD0000h-DDFFFFh128 64 SA222 11011110 DE0000h-DEFFFFh128 64 SA223 11011111 DF0000h-DFFFFFh128 64 SA224 11100000 E00000h-E0FFFFh128 64 SA225 11100001 E10000h-E1FFFFh128 64 SA226 11100010 E20000h-E2FFFFh128 64 SA227 11100011 E30000h-E3FFFFh128 64 SA228 11100100 E40000h-E4FFFFh128 64 SA229 11100101 E50000h-E5FFFFh128 64 SA230 11100110 E60000h-E6FFFFh128 64 SA231 11100111 E70000h-E7FFFFh128 64 SA232 11101000 E80000h-E8FFFFh128 64 SA233 11101001 E90000h-E9FFFFh128 64 SA234 11101010 EA0000h-EAFFFFh128 64 SA235 11101011 EB0000h-EBFFFFh128 64 SA236 11101100 EC0000h-ECFFFFh128 64 SA237 11101101 ED0000h-EDFFFFh128 64 SA238 11101110 EE0000h-EEFFFFh128 64 SA239 11101111 EF0000h-EFFFFFh128 64 SA240 11110000 F00000h-F0FFFFh128 64 SA241 11110001 F10000h-F1FFFFh128 64 SA242 11110010 F20000h-F2FFFFh128 64 SA243 11110011 F30000h-F3FFFFh128 64 SA244 11110100 F40000h-F4FFFFh128 64 SA245 11110101 F50000h-F5FFFFh128 64 SA246 11110110 F60000h-F6FFFFh128 64 SA247 11110111 F70000h-F7FFFFh128 64 SA248 11111000 F80000h-F8FFFFh128 64 SA249 11111001 F90000h-F9FFFFh

Page 13: MX29GL256E H/L DATASHEET - Future Electronics · 2009. 6. 18. · 128 64 SA78 01001110 4E0000h-4EFFFFh 128 64 SA79 01001111 4F0000h-4FFFFFh 128 64 SA80 01010000 500000h-50FFFFh 128

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MX29GL256E H/L

Sector SizeSector Sector Address

A23-A16(x16)

Address RangeKbytes Kwords128 64 SA250 11111010 FA0000h-FAFFFFh128 64 SA251 11111011 FB0000h-FBFFFFh128 64 SA252 11111100 FC0000h-FCFFFFh128 64 SA253 11111101 FD0000h-FDFFFFh128 64 SA254 11111110 FE0000h-FEFFFFh128 64 SA255 11111111 FF0000h-FFFFFFh

Page 14: MX29GL256E H/L DATASHEET - Future Electronics · 2009. 6. 18. · 128 64 SA78 01001110 4E0000h-4EFFFFh 128 64 SA79 01001111 4F0000h-4FFFFFh 128 64 SA80 01010000 500000h-50FFFFh 128

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MX29GL256E H/L

Table 2-1. BUS OPERATION

Notes:1.ThefirstorlastsectorwasprotectedifWP#/ACC=Vil.2. WhenWP#/ACC=Vih,theprotectionconditionsoftheoutmostsectordependsonpreviousprotectioncondi-

tions.Refertotheadvanedprotectfeature.3. Q0~Q15areinput(DIN)oroutput(DOUT)pinsaccordingtotherequestsofcommandsequence,sectorpro-

tection,ordatapollingalgorithm.4. InWordMode(Byte#=Vih),theaddressesareAMtoA0,AM:MSBofaddress. InByteMode(Byte#=Vil),theaddressesareAMtoA-1(Q15),AM:MSBofaddress.

Mode Select RE- SET# CE# WE# OE# Address

(Note4)

Data I/O

Q0~Q7

Byte#WP#/ ACC

Vil VihData (I/O) Q8~Q15

DeviceReset L X X X X HighZ HighZ HighZ L/H

StandbyMode Vcc±0.3V

Vcc±0.3V X X X HighZ HighZ HighZ H

OutputDisable H L H H X HighZ HighZ HighZ L/HReadMode H L H L AIN DOUT Q8-Q14=

HighZ,Q15=A-1

DOUT L/HWrite H L L H AIN DIN DIN Note1,2AccelerateProgram H L L H AIN DIN DIN Vhv

BUS OPERATION

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Notes:1.Sectorunprotectedcode:00h.Sectorprotectedcode:01h.2.Factorylockedcode: WP#protectshighaddresssector:99h. WP#protectslowaddresssector:89hFactoryunlockedcode: WP#protectshighaddresssector:19h. WP#protectslowaddresssector:09h3.AM:MSBofaddress.

Table 2-2. BUS OPERATION

ItemControl Input AM

to A12

A11 to

A10A9

A8 to A7

A6A5 to A4

A3 to A2

A1 A0 Q0 ~ Q7 Q8 ~ Q15CE# WE# OE#

SectorLockStatusVerification L H L SA X Vhv X L X L H L

01hor00h

(Note1)X

ReadSiliconIDManufacturerCode

L H L X X Vhv X L X L L L C2H X

ReadSiliconID--MX29GL256EH/L

Cycle1 L H L X X Vhv X L X L L H 7EH 22H(Word),XXH(Byte)

Cycle2 L H L X X Vhv X L X H H L 22H 22H(Word),XXH(Byte)

Cycle3 L H L X X Vhv X L X H H H 01H 22H(Word),XXH(Byte)

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FUNCTIONAL OPERATION DESCRIPTION

READ OPERATION Toperformareadoperation,thesystemaddressesthedesiredmemoryarrayorstatusregisterlocationbypro-viding itsaddressontheaddresspinsandsimultaneouslyenablingthechipbydrivingCE#&OE#LOW,andWE#HIGH.AftertheTceandToetimingrequirementshavebeenmet,thesystemcanreadthecontentsoftheaddressedlocationbyreadingtheData(I/O)pins.IfeithertheCE#orOE#isheldHIGH,theoutputswillremaintri-statedandnodatawillappearontheoutputpins.

PAGE READ

ThisdeviceisabletoconductMXICMaskROMcompatiblehighperformancepageread.Pagesizeis16bytesor8words.ThehigheraddressAmax~A3select the certainpage,whileA2~A0 forwordmode,A2~A-1 forbytemodeselecttheparticularwordorbyteinapage.ThepageaccesstimeisTaaorTce,followingbyTpafortherestofthepagereadtime.WhenCE#toggles,accesstimeisTaaorTce.Pagemodecanbeturnedonbykeeping"page-readaddress"constantandchangingthe"intra-readpage"addresses.

WRITE OPERATION

Toperformawriteoperation,thesystemprovidesthedesiredaddressontheaddresspins,enablesthechipbyassertingCE#LOW,anddisablestheData(I/O)pinsbyholdingOE#HIGH.ThesystemthenplacesdatatobewrittenontheData(I/O)pinsandpulsesWE#LOW.ThedevicecapturestheaddressinformationonthefallingedgeofWE#andthedataontherisingedgeofWE#.Toseeanexample,pleaserefertothetimingdiagraminFigure1onPage49. Thesystemisnotallowedtowrite invalidcommands(commandsnotdefined in thisdatasheet)tothedevice.Writinganinvalidcommandmayputthedeviceinanundefinedstate.

DEVICE RESET

DrivingtheRESET#pinLOWforaperiodofTrpormorewillreturnthedevicetoReadmode.Ifthedeviceisinthemiddleofaprogramoreraseoperation,theresetoperationwilltakeatmostaperiodofTready1beforethedevicereturnstoReadmode.UntilthedevicedoesreturnstoReadmode,theRY/BY#pinwillremainLow(BusyStatus).

WhentheRESET#pinisheldatGND±0.3V,thedeviceonlyconsumesstandby(Isbr)current.However,thede-vicedrawslargercurrentiftheRESET#pinisheldatavoltagegreaterthanGND+0.3VandlessthanorequaltoVil.

ItisrecommendedtotiethesystemresetsignaltotheRESET#pinoftheflashmemory.Thisallowsthedevicetoberesetwith thesystemandputs it inastatewhere thesystemcan immediatelybeginreadingbootcodefromit.

STANDBY MODE

ThedeviceentersStandbymodewhenevertheRESET#andCE#pinsarebothheldHighexceptintheembed-dedmode.Whileinthismode,WE#andOE#willbeignored,allDataOutputpinswillbeinahighimpedancestate,andthedevicewilldrawminimal(Isb)current.

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FUNCTIONAL OPERATION DESCRIPTION (cont'd)

OUTPUT DISABLE

Whileinactivemode(RESET#HIGHandCE#LOW),theOE#pincontrolsthestateoftheoutputpins.IfOE#isheldHIGH,allData(I/O)pinswillremaintri-stated.IfheldLOW,theByteorWordData(I/O)pinswilldrivedata.

BYTE/WORD SELECTION

TheBYTE#inputpinisusedtoselecttheorganizationofthearraydataandhowthedataisinput/outputontheData(I/O)pins.IftheBYTE#pinisheldHIGH,Wordmodewillbeselectedandall16datalines(Q0toQ15)willbeactive.

IfBYTE#isforcedLOW,BytemodewillbeactiveandonlydatalinesQ0toQ7willbeactive.DatalinesQ8toQ14willremaininahighimpedancestateandQ15becomestheA-1addressinputpin.

HARDWARE WRITE PROTECT

BydrivingtheWP#/ACCpinLOW.Thehighestor lowestwasprotectedfromallerase/programoperations. IfWP#/ACCisheldHIGH(VihtoVCC),thesesectorsreverttotheirpreviouslyprotected/unprotectedstatus.

ACCELERATED PROGRAMMING OPERATION

Byapplyinghighvoltage(Vhv)totheWP#/ACCpin,thedevicewillentertheAcceleratedProgrammingmode.Thismodepermitsthesystemtoskipthenormalcommandunlocksequencesandprogrambyte/wordlocationsdirectly.Duringacceleratedprogramming,thecurrentdrawnfromtheWP#/ACCpinisnomorethanICP1.

WRITE BUFFER PROGRAMMING OPERATION

Programs64bytes/32words inaprogrammingoperation.To trigger theWriteBufferProgramming,startby thefirsttwounlockcycles,thenthirdcyclewritestheWriteBufferLoadcommandatthedestinedprogrammingSec-torAddress.Theforthcyclewritesthe"wordlocationssubtractone"number.

Followingaboveoperations,systemstartstowritetheminglingofaddressanddata.Aftertheprogrammingofthefirstaddressordata,the"write-buffer-page"isselected.Thefollowingdatashouldbewithintheabovemen-tionedpage.

The"write-buffer-page"isselectedbychoosingaddressAmax-A5.

"Write-Buffer-Page"addresshastobethesameforalladdress/datawriteintothewritebuffer.Ifnot,operationwillABORT.

ToprogramthecontentofthewritebufferpagethiscommandmustbefollowedbyawritetobufferProgramcon-firmcommand.

Theoperationofwrite-buffercanbesuspendedorresumedbythestandardcommands,oncethewritebufferprogrammingoperationisfinished,it’llreturntonormalREADmode.

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FUNCTIONAL OPERATION DESCRIPTION (cont'd)

WRITE BUFFER PROGRAMMING OPERATION (cont'd)

ABORTwillbeexecutedfortheWriteBufferProgrammingSequenceiffollowingconditionoccurs:• Thevalueloadedisbiggerthanthepagebuffersizeduring"NumberofLocationstoProgram"• AddresswritteninasectorisnotthesameastheoneassignedduringtheWrite-Buffer-Loadcommand.• Address/Datapairwritten toadifferentwrite-buffer-page than theoneassignedby the "StartingAddress"

during the"writebufferdataloading"operation.• Writingnot"ConfirmCommand"aftertheassignednumberof"dataload"cycles.

TheabortistriggeredbyQ1=1,Q7=DATA#(lastaddresswritten),Q6=toggle,Q5=0.AWrite-to-Buffer-AbortRe-setcommandsequencehastobewrittentoresetthedeviceforthenextoperation.

Writebufferprogrammingcanbeconductedinanysequence.HowevertheCFIfunctions,autoselect,SecuredSiliconsectorarenotfunctionalwhenprogramoperationisinprogress.Multiplewritebufferprogrammingopera-tionsonthesamewritebufferaddressrangewithoutinterveningerasesisavailable.Anybitinawritebufferad-dressrangecan’tbeprogrammedfrom0backto1.

SECTOR PROTECT OPERATION

Thedeviceprovidesuserprogrammableprotectionoperationsforselectedsectors.PleaserefertoTable1whichshowallSectorassignments.

Duringtheprotectionoperation,thesectoraddressofanysectormaybeusedtospecifytheSectorbeingpro-tected.

AUTOMATIC SELECT BUS OPERATIONS

ThefollowingfivebusoperationsrequireA9toberaisedtoVhv.PleaseseeAUTOMATICSELECTCOMMANDSEQUENCEintheCOMMANDOPERATIONSsectionfordetailsofequivalentcommandoperationsthatdonotrequiretheuseofVhv.

SECTOR LOCK STATUS VERIFICATION

Todeterminetheprotectedstateofanysectorusingbusoperations,thesystemperformsaREADOPERATIONwithA9raisedtoVhv,thesectoraddressappliedtoaddresspinsA22toA12,addresspinsA6,A3,A2&A0heldLOW,andaddresspinA1heldHIGH.IfdatabitQ0isLOW,thesectorisnotprotected,andifQ0isHIGH,thesectorisprotected.

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FUNCTIONAL OPERATION DESCRIPTION (cont'd)

READ SILICON ID MANUFACTURER CODE

Todetermine theSilicon IDManufacturerCode, thesystemperformsaREADOPERATIONwithA9 raised toVhvandaddresspinsA6,A3,A2,A1,&A0heldLOW.TheMacronixIDcodeofC2hshouldbepresentondatabitsQ0toQ7.

READ INDICATOR BIT (Q7) FOR SECURITY SECTOR

TodetermineiftheSecuritySectorhasbeenlockedatthefactory,thesystemperformsaREADOPERATIONwithA9raisedtoVhv,addresspinA6,A3&A2heldLOW,andaddresspinsA1&A0heldHIGH.IftheSecuritySectorhasbeenlockedatthefactory,thecode99h(H)/89h(L)willbepresentondatabitsQ0toQ7.Otherwise,thefactoryunlockedcodeof19h(H)/09h(L)willbepresent.

INHERENT DATA PROTECTION

Toavoidaccidentalerasureorprogrammingofthedevice,thedeviceisautomaticallyresettoReadmodeduringpowerup.Additionally,thefollowingdesignfeaturesprotectthedevicefromunintendeddatacorruption.

COMMAND COMPLETION

Onlyafter thesuccessfulcompletionof thespecifiedcommandsetswill thedevicebegin itseraseorprogramoperation.Thefailureinobservingvalidcommandsetswillresultinthememoryreturningtoreadmode.

LOW VCC WRITE INHIBIT

Thedevice refuses to accept anywrite commandwhenVcc is less thanVLKO.This prevents data fromspuriously beingalteredduringpower-up, power-down, or temporary power interruptions.Thedeviceautomaticallyresets itselfwhenVcc is lower thanVLKOandwritecyclesare ignoreduntilVcc isgreater thanVLKO.ThesystemmustprovidepropersignalsoncontrolpinsafterVccrisesaboveVLKOtoavoidunintentionalprogramoreraseoperations.

WRITE PULSE "GLITCH" PROTECTION

CE#,WE#,OE#pulsesshorter than5nsaretreatedasglitchesandwillnotberegardedasaneffectivewritecycle.

LOGICAL INHIBIT

AvalidwritecyclerequiresbothCE#andWE#atVilwithOE#atVih.WritecycleisignoredwheneitherCE#atVih,WE#atVih,orOE#atVil.

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FUNCTIONAL OPERATION DESCRIPTION (cont'd)

POWER-UP SEQUENCE

Uponpowerup, thedevice isplaced inReadmode.Furthermore,programoreraseoperationwillbeginonlyaftersuccessfulcompletionofspecifiedcommandsequences.

POWER-UP WRITE INHIBIT

WhenWE#,CE#isheldatVilandOE#isheldatVihduringpowerup,thedeviceignoresthefirstcommandontherisingedgeofWE#.

POWER SUPPLY DECOUPLING

A0.1uFcapacitorshouldbeconnectedbetweentheVccandGNDtoreducethenoiseeffect.

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COMMAND OPERATIONS

READING THE MEMORY ARRAY Readmodeisthedefaultstateafterpoweruporafteraresetoperation.Toperformareadoperation,pleasere-fertoREADOPERATIONintheBUSOPERATIONSsectionabove.

If thedevice receivesanEraseSuspend commandwhile in theSectorErase state, theeraseoperationwillpause(afteratimedelaynotexceeding20us)andthedevicewillenterErase-SuspendedReadmode.WhileintheErase-SuspendedReadmode,datacanbeprogrammedorreadfromanysectornotbeingerased.Readingfromaddresseswithinsector(s)beingerasedwillonlyreturnthecontentsofthestatusregister,whichisinfacthowthecurrentstatusofthedevicecanbedetermined.

If a programcommand is issued to any inactive (not currently beingerased) sector duringErase-SuspendedReadmode,thedevicewillperformtheprogramoperationandautomaticallyreturntoErase-SuspendedReadmodeaftertheprogramoperationcompletessuccessfully.

WhileinErase-SuspendedReadmode,anEraseResumecommandmustbeissuedbythesystemtoreactivatetheeraseoperation. Theeraseoperationwill resume fromwhere iswassuspendedandwill continueuntil itcompletessuccessfullyoranotherEraseSuspendcommandisreceived.

Afterthememorydevicecompletesanembeddedoperation(automaticChipErase,SectorErase,orProgram)successfully,itwillautomaticallyreturntoReadmodeanddatacanbereadfromanyaddressinthearray.Iftheembeddedoperationfailstocomplete,asindicatedbystatusregisterbitQ5(exceedstimelimitflag)goingHIGHduringtheoperations,thesystemmustperformaresetoperationtoreturnthedevicetoReadmode.

ThereareseveralstatesthatrequirearesetoperationtoreturntoReadmode:

1.Aprogramorerasefailure--indicatedbystatusregisterbitQ5goingHIGHduringtheoperation.Failuresdur-ingeitherofthesestateswillpreventthedevicefromautomaticallyreturningtoReadmode.

2.ThedeviceisinAutoSelectmodeorCFImode.Thesetwostatesremainactiveuntiltheyareterminatedbyaresetoperation.

Inthetwosituationsabove, ifaresetoperation(eitherhardwareresetorsoftwareresetcommand) isnotper-formed,thedevicewillnotreturntoReadmodeandthesystemwillnotbeabletoreadarraydata.

AUTOMATIC PROGRAMMING OF THE MEMORY ARRAY

ThedeviceprovidestheusertheabilitytoprogramthememoryarrayinBytemodeorWordmode.AslongastheusersentersthecorrectcycledefinedintheTable3(including2unlockcyclesandtheA0Hprogramcom-mand),anybyteorworddataprovidedonthedatalinesbythesystemwillautomaticallybeprogrammedintothearrayatthespecifiedlocation.

Aftertheprogramcommandsequencehasbeenexecuted,theinternalwritestatemachine(WSM)automaticallyexecutesthealgorithmsandtimingsnecessaryforprogrammingandverification,whichincludesgeneratingsuit-ableprogrampulses,checkingcell thresholdvoltagemargins,andrepeatingtheprogrampulse ifanycellsdonotpassverificationorhavelowmargins.Theinternalcontrollerprotectscellsthatdopassverificationandmar-gintestsfrombeingover-programmedbyinhibitingfurtherprogrampulsestothesepassingcellsasweakercellscontinuetobeprogrammed.

WiththeinternalWSMautomaticallycontrollingtheprogrammingprocess,theuseronlyneedstoenterthepro-gramcommandanddataonce.

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COMMAND OPERATIONS (cont'd)

AUTOMATIC PROGRAMMING OF THE MEMORY ARRAY (cont'd)

Programmingwillonlychangethebitstatusfrom"1"to"0".Itisnotpossibletochangethebitstatusfrom"0"to"1"byprogramming.Thiscanonlybedonebyaneraseoperation.Furthermore,theinternalwriteverificationonlychecksanddetectserrorsincaseswherea"1"isnotsuccessfullyprogrammedto"0".

Anycommandswrittentothedeviceduringprogrammingwillbeignoredexcepthardwareresetorprogramsus-pend.Hardwareresetwillterminatetheprogramoperationafteraperiodoftimenomorethan10us.Whentheembeddedprogramalgorithmiscompleteortheprogramoperationisterminatedbyahardwarereset,thede-vicewillreturntoReadmode.Programsuspendready,thedevicewillenterprogramsuspendreadmode.

Aftertheembeddedprogramoperationhasbegun,theusercancheckforcompletionbyreadingthefollowingbitsinthestatusregister:

Note:RY/BY#isanopendrainoutputpinandshouldbeconnectedtoVCCthroughahighvaluepull-upresistor.

ERASING THE MEMORY ARRAY

Thereare two typesoferaseoperationsperformedon thememoryarray--SectorEraseandChipErase. IntheSectorEraseoperation,oneormoreselectedsectorsmaybeerasedsimultaneously. In theChipEraseoperation,thecompletememoryarrayiserasedexceptforanyprotectedsectors.Moredetailsoftheprotectedsectorsareexplainedinsection5.

SECTOR ERASE

Thesectoreraseoperation isusedtocleardatawithinasectorbyreturningallof itsmemory locationstothe"1"state.Itrequiressixcommandcyclestoinitiatetheeraseoperation.Thefirsttwocyclesare"unlockcycles",thethird isaconfigurationcycle, thefourthandfiftharealso"unlockcycles",andthesixthcycle istheSectorErasecommand.Afterthesectorerasecommandsequencehasbeenissued,aninternal50ustime-outcounterisstarted.Untilthiscounterreacheszero,additionalsectoraddressesandSectorErasecommandsmaybeis-suedthusallowingmultiplesectorstobeselectedanderasedsimultaneously.Afterthe50ustime-outcounterhasexpired,nonewcommandswillbeacceptedandtheembeddedsectoreraseoperationwillbegin.Notethatthe50ustimer-outcounterisrestartedaftereveryerasecommandsequence.IftheuserentersanycommandotherthanSectorEraseorEraseSuspendduringthetime-outperiod,theeraseoperationwillabortandthede-vicewillreturntoReadmode.

Aftertheembeddedsectoreraseoperationbegins,allcommandsexceptEraseSuspendwillbeignored.TheonlywaytointerrupttheoperationiswithanEraseSuspendcommandorwithahardwarereset.ThehardwareresetwillcompletelyaborttheoperationandreturnthedevicetoReadmode.

Status Q7*1 Q6*1 Q5 Q1 RY/BY# (Note)Inprogress Q7# Toggling 0 0 0

Exceedtimelimit Q7# Toggling 1 N/A 0

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COMMAND OPERATIONS (cont'd)

SECTOR ERASE (cont'd)

Thesystemcandeterminethestatusoftheembeddedsectoreraseoperationbythefollowingmethods:

CHIP ERASE

TheChipEraseoperationisusederaseallthedatawithinthememoryarray.Allmemorycellscontaininga"0"willbereturnedtotheerasedstateof"1".Thisoperationrequires6writecyclestoinitiatetheaction.Thefirsttwocyclesare"unlock"cycles,thethirdisaconfigurationcycle,thefourthandfiftharealso"unlock"cycles,andthesixthcycleinitiatesthechiperaseoperation.

During thechiperaseoperation,noothersoftwarecommandswillbeaccepted,but ifahardware reset is re-ceivedortheworkingvoltageistoolow,thatchiperasewillbeterminated.AfterChipErase,thechipwillauto-maticallyreturntoReadmode.

Thesystemcandeterminethestatusoftheembeddedchiperaseoperationbythefollowingmethods:

*1:RY/BY#isopendrainoutputpinandshouldbeconnectedtoVCCthroughahighvaluepull-upresistor.

Note:1.TheQ3statusbitisthe50ustime-outindicator.WhenQ3=0,the50ustime-outcounterhasnotyetreachedzeroandanewSectorErasecommandmaybeissuedtospecifytheaddressofanothersectortobeerased.WhenQ3=1,the50ustime-outcounterhasexpiredandtheSectorEraseoperationhasalreadybegun.EraseSuspendistheonlyvalidcommandthatmaybeissuedoncetheembeddederaseoperationisunderway.

2.RY/BY#isopendrainoutputpinandshouldbeconnectedtoVCCthroughahighvaluepull-upresistor.3.Whenanattemptismadetoeraseonlyprotectedsector(s),theeraseoperationwillabortthuspreventinganydatachanges intheprotectedsector(s). Q7willoutput"0"andQ6will togglebriefly(100usor less)beforeabortingandreturningthedevicetoReadmode.Ifunprotectedsectorsarealsospecified,however,theywillbeerasednormallyandtheprotectedsector(s)willremainunchanged.

4.Q2isalocalizedindicatorshowingaspecifiedsectorisundergoingeraseoperationornot.Q2toggleswhenuserreadsataddresseswherethesectorsareactivelybeingerased(inerasemode)ortobeerased(inerasesuspendmode).

Status Q7 Q6 Q5 Q3*1 Q2 RY/BY#*2

Time-outperiod 0 Toggling 0 0 Toggling 0Inprogress 0 Toggling 0 1 Toggling 0

Exceededtimelimit 0 Toggling 1 1 Toggling 0

Status Q7 Q6 Q5 Q2 RY/BY#*1

Inprogress 0 Toggling 0 Toggling 0Exceedtimelimit 0 Toggling 1 Toggling 0

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Afterbeginningasectoreraseoperation,EraseSuspendistheonlyvalidcommandthatmaybeissued.Ifsys-temissuesanEraseSuspendcommandduringthe50ustime-outperiodfollowingaSectorErasecommand,thetime-outperiodwillterminateimmediatelyandthedevicewillenterErase-SuspendedReadmode.IfthesystemissuesanEraseSuspendcommandafterthesectoreraseoperationhasalreadybegun,thedevicewillnotenterErase-SuspendedReadmodeuntil20ustimehaselapsed.ThesystemcandetermineifthedevicehasenteredtheErase-SuspendedReadmodethroughQ6,Q7,andRY/BY#.

AfterthedevicehasenteredErase-SuspendedReadmode,thesystemcanreadorprogramanysector(s)ex-ceptthosebeingerasedbythesuspendederaseoperation.Readinganysectorbeingerasedorprogrammedwillreturnthecontentsofthestatusregister.Wheneverasuspendcommandisissued,usermustissueare-sumecommandandcheckQ6togglebitstatus,beforeissueanothererasecommand.Thesystemcanusethestatusregisterbitsshowninthefollowingtabletodeterminethecurrentstateofthedevice:

COMMAND OPERATIONS (cont'd)

ERASE SUSPEND/RESUME

When thedevicehassuspendederasing,user canexecute thecommandsetsexcept sectoreraseandchiperase,suchasreadsiliconID,sectorprotectverify,program,CFIqueryanderaseresume.

SECTOR ERASE RESUME

The sectorEraseResumecommand is valid onlywhen thedevice is inErase-SuspendedReadmode.Aftereraseresumes,theusercanissueanotherEaseSuspendcommand,butthereshouldbea400usintervalbe-tweenEaseResumeandthenextEraseSuspendcommand.

Status Q7 Q6 Q5 Q3 Q2 Q1 RY/BY#Erasesuspendreadinerasesuspendedsector 1 Notoggle 0 N/A toggle N/A 1Erasesuspendreadinnon-erasesuspendedsector Data Data Data Data Data Data 1Erasesuspendprograminnon-erasesuspendedsector Q7# Toggle 0 N/A N/A N/A 0

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COMMAND OPERATIONS (cont'd)

PROGRAM SUSPEND/RESUME

WhenthedevicehasProgram/Erasesuspended,usercanexecutereadarray,auto-select,readCFI,readsecu-ritysilicon.

PROGRAM RESUME

TheProgramResumecommandisvalidonlywhenthedevice is inProgram-Suspendedmode.Afterprogramresumes,theusercanissueanotherProgramSuspendcommand,butthereshouldbea5usintervalbetweenProgramResumeandthenextProgramSuspendcommand.

Status Q7 Q6 Q5 Q3 Q2 Q1 RY/BY#Programsuspendreadinprogramsuspendedsector Invalid 1Programsuspend read in non-programsuspendedsector Data Data Data Data Data Data 1

BUFFER WRITE ABORT

Q1istheindicatorofBufferWriteAbort.WhenQ1=1,thedevicewillabortfrombufferwriteandgobacktoreadstatusregistershownasfollowingtable:

Status Q7 Q6 Q5 Q3 Q2 Q1 RY/BY#BufferWriteBusy Q7# Toggle 0 N/A N/A 0 0

BufferWriteAbort Q7# Toggle 0 N/A N/A 1 0

BufferWriteExceededTimeLimit Q7# Toggle 1 N/A N/A 0 0

Afterbeginningaprogramoperation,ProgramSuspendistheonlyvalidcommandthatmaybeissued.Thesys-temcandetermineifthedevicehasenteredtheProgram-SuspendedReadmodethroughQ6andRY/BY#.

AfterthedevicehasenteredProgram-Suspendedmode,thesystemcanreadanysector(s)exceptthosebeingprogramdbythesuspendedprogramoperation.Readingthesectorbeingprogramsuspendedisinvalid.When-everasuspendcommandisissued,usermustissuearesumecommandandcheckQ6togglebitstatus,beforeissueanotherprogramcommand.Thesystemcanusethestatusregisterbitsshowninthefollowingtabletode-terminethecurrentstateofthedevice:

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AUTOMATIC SELECT OPERATIONS

WhenthedeviceisinReadmode,ProgramSuspendedmode,Erase-SuspendedReadmode,orCFImode,theusercan issuetheAutomaticSelectcommandshowninTable3(twounlockcyclesfollowedbytheAutomaticSelectcommand90h)toenterAutomaticSelectmode.AfterenteringAutomaticSelectmode,theusercanquerytheManufacturerID,DeviceID,SecuritySectorlockedstatus,orSectorprotectedstatusmultipletimeswithoutissuinganewAutomaticSelectcommand.

WhileInAutomaticSelectmode,issuingaResetcommand(F0h)willreturnthedevicetoReadmode(orEase-SuspendedReadmodeifErase-Suspendwasactive)orProgramSuspendedReadmodeifProgramSuspendwasactive.

Anotherway to enterAutomaticSelectmode is to useoneof thebusoperations shown inTable2.BUSOPERATION_2.Afterthehighvoltage(Vhv)isremovedfromtheA9pin,thedevicewillautomaticallyreturntoReadmodeorErase-SuspendedReadmode.

AUTOMATIC SELECT COMMAND SEQUENCE

AutomaticSelectmodeisusedtoaccessthemanufacturerID,deviceIDandtoverifywhetherornotsecuredsiliconislockedandwhetherornotasectorisprotected.Theautomaticselectmodehasfourcommandcycles.Thefirst twoareunlockcycles,and followedbyaspecificcommand.Thefourthcycle isanormal readcycle,andusercanreadatanyaddressanynumberoftimeswithoutenteringanothercommandsequence.TheResetcommandisnecessarytoexittheAutomaticSelectmodeandbacktoreadarray.Thefollowingtableshowstheidentificationcodewithcorrespondingaddress.

Afterenteringautomaticselectmode,noothercommandsareallowedexcepttheresetcommand.

COMMAND OPERATIONS (cont'd)

Address Data (Hex) Representation

ManufacturerIDWord X00 C2Byte X00 C2

DeviceID MX29GL256EWord X01/0E/0F 227E/2222/2201

Byte X02/1C/1E 7E/22/01

SecuredSiliconWord X03 99/19(H) Factorylocked/unlocked89/09(L)

Byte X06 99/19(H) Factorylocked/unlocked89/09(L)

SectorProtectVerify Word (Sectoraddress)X02 00/01 Unprotected/protectedByte (Sectoraddress)X04 00/01 Unprotected/protected

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READ MANUFACTURER ID OR DEVICE ID

TheManufacturerID(identification)isauniquehexadecimalnumberassignedtoeachmanufacturerbytheJE-DECcommittee.EachcompanyhasitsownmanufacturerID,whichisdifferentfromtheIDofallothercompa-nies.ThenumberassignedtoMacronixisC2h.

AfterenteringAutomaticSelectmode,performingareadoperationwithA1&A0heldLOWwillcausethedevicetooutputtheManufacturerIDontheDataI/O(Q7toQ0)pins.

RESET

Inthefollowingsituations,executingresetcommandwillresetdevicebacktoReadmode:

• Amongerasecommandsequence(beforethefullcommandsetiscompleted)• Sectorerasetime-outperiod• Erasefail(whileQ5ishigh)• Amongprogramcommandsequence(beforethefullcommandset iscompleted,erase-suspendedprogramincluded)

• Programfail(whileQ5ishigh,anderase-suspendedprogramfailisincluded)• Auto-selectmode• CFImode

Whiledeviceisatthestatusofprogramfailorerasefail(Q5ishigh),usermustissueresetcommandtoresetdevicebacktoreadarraymode.WhilethedeviceisinAuto-SelectmodeorCFImode,usermustissueresetcommandtoresetdevicebacktoreadarraymode.

Whenthedeviceisintheprogressofprogramming(notprogramfail)orerasing(noterasefail),devicewillig-noreresetcommand.

COMMAND OPERATIONS (cont'd)

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Start

Q1=0 Q2=0

Password Protection Mode

To chooseprotection mode

set lock register bit(Q1/Q2)

SetSPB Lock Bit

SPB = 0

SPB = 1

SPB Lock bit UnlockedSPB is changeable

Solid Write Protect bit (SPB)

SPB=0 sector protect

SPB=1 sector unprotect

Temporary Unprotect SPB bit (USPB)

USPB=0 Temp. Unprotect SPB bit, SPB changeable

USPB=1 SPB bit can not changeable

USPB 0

USPB 1

USPB 2

::

USPB N-1

USPB N

SPB 0

SPB 1

SPB 2

::

SPB N-1

SPB N

SA 0

SA 1

SA 2

::

SA N-1

SA N

DPB 0

DPB 1

DPB 2

::

DPB N-1

DPB N

SPB Lock bit lockedAll SPB can not changeable

Solid Protection Mode

Set 64 bit Password

Sector Array

Dynamic Write Protect bit (DPB)

DPB=0 sector protect

DPB=1 sector unprotect

Advanced Sector Protection/Un-protection

Thereare twoways to implement softwareAdvancedSectorProtectionon this device:PasswordmethodorSolidmethods.Throughthesetwoprotectionmethod,usercandisableorenable theprogrammingorerasingoperationtoanyindividualsectororwholechip.Thefigurebelowhelpsdescribeanoverviewofthesemethods.

ThedeviceisdefaulttotheSolidmodeandallsectorsareunprotectedwhenshippedfromfactory.showsthedetailalgorithmofadvancesectorprotecting.

Advance Sector Protection/Unprotection SPB Program Algorithm :

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1. Lock Register

UsercanchoosefavoritesectorprotectingmethodviasettingLockRegisterbitsQ1andQ2.LockRegister isa16-bitone-timeprogrammableregister.OnceprogrammingeitherQ1orQ2,theywillbelockedinthatmodeandtheotherswillbedisabledpermanently.Q1andQ2cannotbeprogrammedatthesametime,otherwisethedevicewillaborttheoperation.

IfuserselectsPasswordProtectionmode,thepasswordsettingisrequired.Usercansetpasswordbyissuingpasswordprogramcommand.

AftertheLockRegisterBitsCommandSetEntrycommandsequenceisissued,thereadandwriteoperationsfornormalsectorsaredisableduntilthismodeexits.

ALockRegisterallowsthememorysectorsandextendedmemorysectorprotectiontobeconfigured.

Lock Register bitsQ15-Q3 Q2 Q1 Q0

Don'tcare PasswordProtectionModeLockBit

SolidProtectionModeLockBit

SecuredSiliconSectorProtectionBit

PleaserefertothecommandforLockRegistercommandsettoreadandprogramtheLockregister.

Lock Register Program Algorithm :

START

Pass

Exit Lock Register command

Done YES

YES

NO

Q5 = 1NO

Write Data AAH, Address 555H

Lock register command set EntryWrite Data 55H, Address 2AAH

Write Data 40H, Address 555H

Write Data A0H, Address don’t care

Write Program Data, Address don’t care

Data # Polling Algorithm

Fail

Reset command

Lock register data program

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2. Solid write (non-volatile) protection Mode

2.1 Solid write Protection Bits (SPB)

TheSolidwriteProtectionbit (SPB) is a nonvolatile bitwith the sameendurancesas theFlashmemory. Itis assigned to each sector individually.TheSPB isPreprogramming, and its verificationprior to erasurearemanagedbythedevice,sosystemmonitoringisnotnecessary.

WhenaSPBissetto“0”,theassociatedsectorisprotected,preventinganyprogramoreraseoperationonthissector.TheSPBbitsaresetindividuallybySPBprogramcommand.However,itcannotbeclearedindividually.IssuingtheAllSPBErasecommandwilleraseallSPBinthesametime.DuringSPBprogrammingperiod,thereadandwriteoperationsaredisabledfornormalsectoruntilthismodeexits.

If oneof theprotected sector need tobeunprotected (correspondingSPBset to “1”), a fewmore stepsarerequired.First,theSPBLockBitmustbeclearedbyeitherputtingthedevicethroughapower-cycle,orhardwarereset.TheSPBscanthenbechangedtoreflectthedesiredsettings.SettingtheSPBLockBitonceagainlockstheSPBs,andthedeviceoperatesnormallyagain.

To verify theprogramming state of theSPB for a given sector, issuingaSPBStatusReadCommand to thedeviceisrequired.RefertotheflowchartbelowfordetailsofSPBProgramAlgorithm.

Notes1.TheReadactionswithinthatsectorwillbringtheSPBstatusbackforthatsector.AllReadactionsmustbe

executedbyreadmode.Thespecificsectoraddressiswrittenastheprogramcommandatthesametime.2.OnceSPBLockBit is set, itsProgramor erase commandwill not beexecutedand times-outwithout

programmingorerasingtheSPB.3.Alwaysissueexitcommandaftertheexecutionofresettingthedevicetoreadmodeandre-enablesreadand

writeactionsfornormalarray.4.Toachievethebesteffectofprotection,itisrecommendedtoexecutetheSPBLockBitSetcommandearly

inthebootcodeandprotectthebootcodebyholdingWP#/ACC=VIL.NotethattheSPBandDPBbitshavethesamefunctionwhenWP#/ACC=VHH,anditissamewhenACC=VIH.

2.2 Dynamic Protection Bits (DPBS)

TheDynamicProtectionallows the softwareapplication to easily protect sectorsagainst inadvertent change.However,theprotectioncanbeeasilydisabledwhenchangesarenecessary.

AllDynamicProtectionbit (DPB)are volatile andassigned to each sector. It canbemodify individual.DPBsprovide theprotection schemeonly for unprotected sectors that have theirSPBs cleared (erase canbeindividuallymodifiedd to “1”).Tomodify theDPBstatusby issuing theDPBSet (programmed to “0”) orDPBClear(erasedto“1”)commands,thenplacingeachsectorintheprotectedorunprotectedstateseperately.AftertheDPBClearcommandisissued(erasedto“1”),thesectormaybemodifieddependingontheSPBstateofthatsector

Whenthepartsarefirstshipped,theSPBsarecleared(erasedto“1”)anduponpoweruporreset,theDPBscanbesetorcleareddependingupontheorderingoptionchosen.

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2.3 Temporary Un-protect Solid write protect bit (USPB)TemporaryUn-protectSolidwriteProtectBits are volatile andunique for each sector and canbe individuallymodified.By issuing theUSPBSetorClearcommandsequences, theUSPBsareset (programmedto“0”)orcleared(erasedto“1”),thusmaskeachsector'ssolidwriteprotectbitproperty.ThisfeatureallowssoftwaretotempunprotectwriteprotectsectorsdespiteofSPB'spropertywhenDPBsarecleared.

Notes:1.TheUSPBscanbeset(programmedto“0”)orcleared(erasedto“1”)asoftenasneeded.TheUSPBsarecleared(all1s)uponpowerup.Hardwareresetwon”tchangeUSPBs/DPBsstatus.ThesectorsSPBswouldbeineffectivestateafterpowerupischosen.

2.However, ifthereisaneedtowriteasolidprotectbitprotectsectorstatus,userdon'thavetoclearallSPBbits.TheyjustusesoftwaretosetcorrespondingUSPBto0,whichguaranteesthatcorrespondingDPBstatusisclear,andoriginalsolidprotectbitprotectedsectorscanbetemporarywritten.

3.SPBLKshouldbeclearedtomodifyUSPBstatus.

Q6 Toggle ?

Q6 Toggle ?

Q5 = 1 ?

NO

NO

YES

NO

NO

SPB command set entry

Program SPB

Read Q7~Q0Twice

Read Q7~Q0Twice

Read Q7~Q0Twice

YES

YES

YES

Wait 500 s

Program Fail Write Reset CMD

Pass

Q0='1' (Erase)

'0' (Program)

SPB command set Exit

Note:SPBprogram/erasestatuspollingflowchart:checkQ6toggle,whenQ6stoptoggle,thereadstatusis00H/01H(00Hforprogram/01Hforerase),otherwisethestatusis“fail”and“exit”.

SPB Program Algorithm :

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4. Password Protection Method

ThesecuritylevelofPasswordProtectionMethodishigherthentheSolidprotectionmode.The64bitpasswordisrequestedbeforemodifySPBlockbitstatus.Whendeviceisunderpasswordprotectionmode,theSPBlockbitisset“0”,afterapower-upcycleorResetCommand.

AcorrectpasswordisrequiredforpasswordUnlockcommand,tounlocktheSPBlockbit.Await2usisnecessaryto unlocked thedeviceafter valid password is given.After that, theSPBbits are allows to be changed.ThePasswordUnlockcommandareissuedslowerthen2μseverytime,.topreventhackerfromtryingallthe64-bitpasswordcombinations.

Toplace thedevice in passwordprotectionmode, a fewmore stepsare required.First, prior to entering thepasswordprotectionmode, it is necessary to set a 64-bit password to verify it.Password verification is onlyallowedduringthepasswordprogrammingoperation.Second,thepasswordprotectionmodeisthenactivatedbyprogramming thepassword thePasswordProtectionModeLockBit to”0”.Thisoperation isnot reversible.Oncethebit isprogrammed, itcannotbeerased,andthedeviceremainspermanently inpasswordprotectionmode, and the64-bit password canneither be retrievednor reprogrammed.Moreover, all commands to theaddresswherethepasswordisstoredaredisabled.

Thepasswordisall“1”swhenshippedfromthefactory,itisonlycapabletoprogramming"0"sunderpasswordprogramcommand.All64-bitpasswordcombinationsarevalidasapassword.Nospecialaddress is requiredforprogramming thepassword. Inorder topreventaccess, thePasswordModeLockingBitmustbesetafterthePassword isprogrammedandverified.OncethePasswordModeLockBit isset,preventsreading64-bitspasswordonthedatabusandanyfuturemodification.Thereisnomeanstoverifywhatthepasswordisafteritisset.

Entrycommandsequencewillcausethereadandwriteoperationtobedisabledfornormalsectoruntilthismodeexits.Oncesectorunderprotectedstatus,devicewillignorestheprogram/erasecommand,enablestatuspollingandreturnstoreadmodewithoutcontentschange.TheDPB,SPB,USPBandSPBlockbitstatusofeachsectorcanbeverifiedbyissuestatusreadcommands.

3. Solid Protection Bit Lock Bit

TheSolidProtectionBit LockBit (SPB) is assign to control allSPBstatus. It is a uniqueand volatile.WhenSPB=0 (set),allSPBsare lockedandcannotbechanged.WhenSPB=1 (cleared),allSPBsareunlockandallowstobechanged.

There isno software commandsequence requested tounlocks thisbit, unless thedevice is in thepasswordprotectionmode.TocleartheSPBlockbit,justtakethedevicethroughahardwareresetorapower-upcycle.Inordertopreventmoified,theSPBLockBitmustbeset(SPB=0)afterallSPBsaresettingthedesiredstatus.

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Sector Protection Status TableProtection Bit Status

Sector StatusDPB SPBLK SPB USPBclear clear clear clear unprotect,DPB/SPB/USPBarechangeableclear clear clear set unprotect,DPB/SPB/USPBarechangeableclear clear set clear protect,DPB/SPB/USPBarechangeableclear clear set set unprotect,DPB/SPB/USPBarechangeableclear set clear clear unprotect,DPB/USPBarechangeableclear set clear set unprotect,DPB/USPBarechangeableclear set set clear protect,DPB/USPBarechangeableclear set set set unprotect,DPB/USPBarechangeableset clear clear clear protect,DPB/SPB/USPBarechangeableset clear clear set protect,DPB/SPB/USPBarechangeableset clear set clear protect,DPB/SPB/USPBarechangeableset clear set set protect,DPB/SPB/USPBarechangeableset set clear clear protect,DPB/USPBarechangeableset set clear set protect,DPB/USPBarechangeableset set set clear protect,DPB/USPBarechangeableset set set set protect,DPB/USPBarechangeable

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Secured Silicon Sector Address Range Standard Factory Locked Express Flash

Factory Locked Customer Lockable

000000h-000007h ESN ESNorDeterminedbyCustomer DeterminedbyCustomer

000008h-00007Fh Unavailable DeterminedbyCustomer

Customer Lockable: Security Sector NOT Programmed or Protected at the Factory

Whenthesecurityfeatureisnotrequired,thesecurityregioncanactasanextramemoryspace.

Securitysiliconsectorcanalsobeprotectedbytwomethods.Notethatoncethesecuritysiliconsector ispro-tected,thereisnowaytounprotectthesecuritysiliconsectorandthecontentofitcannolongerbealtered.

Afterthesecuritysiliconislockedandverified,systemmustwriteExitSecuritySectorRegion,gothroughapow-ercycle,orissueahardwareresettoreturnthedevicetoreadnormalarraymode.

SECURITY SECTOR FLASH MEMORY REGION

TheSecuritySectorregionisanextraOTPmemoryspaceof128wordsin length.Thesecuritysectorcanbelockeduponshippingfromfactory,oritcanbelockedbycustomeraftershipping.CustomercanissueSecuritySectorFactoryProtectVerifyand/orSecuritySectorProtectVerifytoquerythelockstatusofthedevice.

In factory-lockeddevice,securitysectorregion isprotectedwhenshippedfromfactoryandthesecuritysiliconsectorindicatorbitissetto"1".Incustomerlockabledevice,securitysectorregionisunprotectedwhenshippedfromfactoryandthesecuritysiliconindicatorbitissetto"0".

Factory Locked: Security Sector Programmed and Protected at the Factory

Inafactorylockeddevice,theSecuritySectorispermanentlylockedbeforeshippingfromthefactory.Thede-vicewillhavea16-byte(8-word)ESNinthesecurityregion.TheESNoccupiesaddresses00000hto0000Fhinbytemodeor00000hto00007hinwordmode.

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TABLE 3. COMMAND DEFINITIONS

WA=WriteAddressWD=WriteDataSA=SectorAddressN-1=WordCountWBL=WriteBufferLocationPWD=PasswordPWDn=Passwordword0,word1,wordnID1/ID2/ID3:RefertoTable2-2fordetailID.

Comm-and

ReadMode

ResetMode

AutomaticSelect SecuritySectorRegion

ExitSecuritySectorSiliconID DeviceID FactoryProtect

VerifySectorProtectVerify

Word Byte Word Byte Word Byte Word Byte Word Byte Word Byte1stBusCycle

Addr Addr XXX 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAAData Data F0 AA AA AA AA AA AA AA AA AA AA AA AA

2ndBusCycle

Addr 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555Data 55 55 55 55 55 55 55 55 55 55 55 55

3rdBusCycle

Addr 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAAData 90 90 90 90 90 90 90 90 88 88 90 90

4thBusCycle

Addr X00 X00 X01 X02 X03 X06 (Sector)X02

(Sector)X04 XXX XXX

Data C2h C2h ID1 ID1 99/19(H)89/09(L) 00/01 00/01 00 00

5thBusCycle

Addr X0E X1CData ID2 ID2

6thBusCycle

Addr X0F X1EData ID3 ID3

Comm-and

ProgramWritetoBuffer

Program

WritetoBuffer

ProgramAbortReset

WritetoBuffer

Programconfirm

ChipErase SectorErase CFIRead

Program/Erase

Suspend

Program/EraseResume

Word Byte Word Byte Word Byte Word Byte Word Byte Word Byte Word Byte Word Byte Word Byte

1stBusCycle

Addr 555 AAA 555 AAA 555 AAA SA SA 555 AAA 555 AAA 55 AA xxx xxx xxx xxxData AA AA AA AA AA AA 29 29 AA AA AA AA 98 98 B0 B0 30 30

2ndBusCycle

Addr 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555Data 55 55 55 55 55 55 55 55 55 55

3rdBusCycle

Addr 555 AAA SA SA 555 AAA 555 AAA 555 AAAData A0 A0 25 25 F0 F0 80 80 80 80

4thBusCycle

Addr Addr Addr SA SA 555 AAA 555 AAAData Data Data N-1 N-1 AA AA AA AA

5thBusCycle

Addr WA WA 2AA 555 2AA 555Data WD WD 55 55 55 55

6thBusCycle

Addr WBL WBL 555 AAA Sec-tor

Sec-tor

Data WD WD 10 10 30 30

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Command

DeepPowerDown PasswordProtection

Enter ExitPassword

CommandSetEntry

PasswordProgram

PasswordRead

PasswordUnlock

PasswordCommandSet

ExitWord Byte Word Byte Word Byte Word Byte Word Byte Word Byte Word Byte

1stBusCycle

Addr 555 AAA XXX XXX 555 AAA XXX XXX X00 X00 00 00 XXX XXXData AA AA AB AB AA AA A0 A0 PWD0 PWD0 25 25 90 90

2ndBusCycle

Addr 2AA 555 2AA 555 PWA PWA X01 X01 00 00 XXX XXXData 55 55 55 55 PWD PWD PWD1 PWD1 03 03 00 00

3rdBusCycle

Addr XXX XXX 555 AAA X02 X02 X00 X00Data B9 B9 60 60 PWD2 PWD2 PWD0 PWD0

4thBusCycle

Addr X03 X03 X01 X01Data PWD3 PWD3 PWD1 PWD1

5thBusCycle

Addr X04 X02 X02Data PWD4 PWD2 PWD2

6thBusCycle

Addr X05 X03 X03Data PWD5 PWD3 PWD3

7thBusCycle

Addr X06 00 X04Data PWD6 29 PWD4

8thBusCycle

Addr X07 X05Data PWD7 PWD5

9thBusCycle

Addr X06Data PWD6

10thBusCycle

Addr X07Data PWD7

11thBusCycle

Addr 00Data 29

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Command

LockRegister GlobalNon-Volatile

LockregisterCommandSetEntry

Program ReadLockregisterCommandSetExit

SPBCommandSetEntry

SPBProgram

AllSPBErase

SPBStatusRead

Word Byte Word Byte Word Byte Word Byte Word Byte Word Byte Word Byte Word Byte1stBusCycle

Addr 555 AAA XXX XXX XXX XXX XXX XXX 555 AAA XXX XXX XXX XXX SA SAData AA AA A0 A0 DATA DATA 90 90 AA AA A0 A0 80 80 00/01 00/01

2ndBusCycle

Addr 2AA 555 XXX XXX XXX XXX 2AA 555 SA SA 00 00Data 55 55 Data Data 00 00 55 55 00 00 30 30

3rdBusCycle

Addr 555 AAA 555 AAA Data 40 40 C0 C0

4thBusCycle

AddrData

5thBusCycle

AddrData

Command

GlobalNon-Volatile GlobalVolatileFreeze Volatile

SPBCommandSetExit

SPBLockCommandSetEntry

SPBLockSet

SPBLockStatusRead

SPBLockCommandSetExit

DPBCommandSetEntry

DPBSet DPBClear

Word Byte Word Byte Word Byte Word Byte Word Byte Word Byte Word Byte Word Byte1stBusCycle

Addr XXX XXX 555 AAA XXX XXX XXX XXX XXX XXX 555 AAA XXX XXX XXX XXXData 90 90 AA AA A0 A0 00/01 00/01 90 90 AA AA A0 A0 A0 A0

2ndBusCycle

Addr XXX XXX 2AA 555 XXX XXX XXX XXX 2AA 555 SA SA SA SAData 00 00 55 55 00 00 00 00 55 55 00 00 01 01

3rdBusCycle

Addr 555 AAA 555 AAA Data 50 50 E0 E0

4thBusCycle

AddrData

5thBusCycle

AddrData

Command

Volatile

DPBStatusRead

DPBCommandSetExit

Word Byte Word Byte1stBusCycle

Addr SA SA XXX XXXData 00/01 00/01 90 90

2ndBusCycle

Addr XXX XXXData 00 00

3rdBusCycle

AddrData

4thBusCycle

AddrData

5thBusCycle

AddrData

Notes:*Itisnotrecommendedtoadoptanyothercodenotinthecommanddefinitiontablewhichwillpotentiallyenterthehiddenmode.*FortheSPBLockandDPBStatusRead"00"meanslock(protect),"01"meansunlock(unprotect).

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Table 4-1. CFI mode: Identification Data Values(Allvaluesinthesetablesareinhexadecimal)

Table 4-2. CFI mode: System Interface Data Values

COMMON FLASH MEMORY INTERFACE (CFI) MODE

QUERY COMMAND AND COMMAND FLASH MEMORY INTERFACE (CFI) MODE

Thedevice featuresCFImode.Host systemcan retrieve theoperating characteristics, structureand vendor-specified informationsuchas identifying information,memorysize,byte/wordconfiguration,operatingvoltagesandtiming informationof thisdevicebyCFImode. If thesystemwritestheCFIQuerycommand"98h", toad-dress"55h"/"AAh"(dependingonWord/Bytemode),thedevicewillentertheCFIQueryMode,anytimethede-viceisreadytoreadarraydata.ThesystemcanreadCFIinformationattheaddressesgiveninTable4.

OnceuserentersCFIquerymode,usercan issue resetcommand toexitCFImodeand return to readarraymode.

DescriptionAddress (h) (Word Mode)

Address (h)(Byte Mode)

Data (h)

Vccsupplyminimumprogram/erasevoltage 1B 36 0027Vccsupplymaximumprogram/erasevoltage 1C 38 0036VPPsupplyminimumprogram/erasevoltage 1D 3A 0000VPPsupplymaximumprogram/erasevoltage 1E 3C 0000Typicaltimeoutpersingleword/bytewrite,2nus 1F 3E 0003Typicaltimeoutformaximum-sizebufferwrite,2nus(00h,notsupport)

20 40 0006

Typicaltimeoutperindividualblockerase,2nms 21 42 0009Typicaltimeoutforfullchiperase,2nms(00h,notsupport) 22 44 0013Maximumtimeoutforword/bytewrite,2ntimestypical 23 46 0003Maximumtimeoutforbufferwrite,2ntimestypical 24 48 0005Maximumtimeoutperindividualblockerase,2ntimestypical 25 4A 0003Maximumtimeoutforchiperase,2ntimestypical(00h,notsupport)

26 4C 0002

DescriptionAddress (h) (Word Mode)

Address (h)(Byte Mode)

Data (h)

Query-uniqueASCIIstring"QRY"10 20 005111 22 005212 24 0059

PrimaryvendorcommandsetandcontrolinterfaceIDcode 13 26 000214 28 0000

Addressforprimaryalgorithmextendedquerytable 15 2A 004016 2C 0000

AlternatevendorcommandsetandcontrolinterfaceIDcode 17 2E 000018 30 0000

Addressforalternatealgorithmextendedquerytable 19 32 00001A 34 0000

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Table 4-3. CFI mode: Device Geometry Data Values

DescriptionAddress (h) (Word Mode)

Address (h)(Byte Mode)

Data (h)

Devicesize=2ninnumberofbytes 27 4E 0019

Flashdeviceinterfacedescription(02=asynchronousx8/x16)28 50 000229 52 0000

Maximumnumberofbytesinbufferwrite=2n(00h,notsupport)2A 54 00062B 56 0000

Numberoferaseregionswithindevice(01h:uniform,02h:boot) 2C 58 0001

IndexforEraseBankArea1:[2E,2D]=#ofsame-sizesectorsinregion1-1[30,2F]=sectorsizeinmultiplesof256K-bytes

2D 5A 00FF2E 5C 00002F 5E 000030 60 0002

IndexforEraseBankArea2

31 62 000032 64 000033 66 000034 68 0000

IndexforEraseBankArea3

35 6A 000036 6C 000037 6E 000038 70 0000

IndexforEraseBankArea4

39 72 00003A 74 00003B 76 00003C 78 0000

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40P/N:PM1499 REV. 1.0, APR. 28, 2009

MX29GL256E H/L

Table 4-4. CFI mode: Primary Vendor-Specific Extended Query Data Values

DescriptionAddress (h) (Word Mode)

Address (h)(Byte Mode)

Data (h)

Query-Primaryextendedtable,uniqueASCIIstring,PRI40 80 005041 82 005242 84 0049

Majorversionnumber,ASCII 43 86 0031Minorversionnumber,ASCII 44 88 0033Unlockrecognizesaddress(0=recognize,1=don'trecognize) 45 8A 0014Erasesuspend(2=tobothreadandprogram) 46 8C 0002Sectorprotect(N=#ofsectors/group) 47 8E 0001Temporarysectorunprotect(1=supported) 48 90 0000Sectorprotect/Chipunprotectscheme 49 92 0008SimultaneousR/Woperation(0=notsupported) 4A 94 0000Burstmode(0=notsupported) 4B 96 0000Pagemode(0=notsupported,01=4wordpage,02=8wordpage) 4C 98 0002

MinimumACC(acceleration)supply(0=notsupported),[D7:D4]forvolt,[D3:D0]for100mV 4D 9A 0095

MaximumACC(acceleration)supply(0=notsupported),[D7:D4]forvolt,[D3:D0]for100mV 4E 9C 00A5

WP#Protection04=UniformsectorsbottomWP#protect05=UniformsectorstopWP#protect

4F 9E 0004/0005

ProgramSuspend(0=notsupported,1=supported) 50 A0 0001

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MX29GL256E H/L

ABSOLUTE MAXIMUM STRESS RATINGS

OPERATING TEMPERATURE AND VOLTAGE

ELECTRICAL CHARACTERISTICS

SurroundingTemperaturewithBias -65°Cto+125°CStorageTemperature -65°Cto+150°C

VoltageRange

VCC -0.5Vto+4.0V

VI/O -0.5Vto+4.0V

A9,WP#/ACC -0.5Vto+10.5VTheotherpins. -0.5VtoVcc+0.5V

OutputShortCircuitCurrent(lessthanonesecond) 200mA

Commercial (C) Grade SurroundingTemperature(TA ) 0°Cto+70°CIndustrial (I) Grade SurroundingTemperature(TA ) -40°Cto+85°C

VCC Supply Voltages

FullVCC range +2.7Vto3.6VRegulatedVCC range +3.0Vto3.6VVI/Orange +2.7Vto3.6V

NOTICE:1.Stressesgreater than those listedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamagetothedevice.Thisisstressratingonlyandfunctionaloperationalsectionsofthisspecificationisnotimplied.Exposuretoabsolutemaximumratingconditionsforextendedperiodmayaffectreliability.

2.Specificationscontainedwithinthefollowingtablesaresubjecttochange.3.Duringvoltagetransitions,allpinsmayovershootVssto-2.0VandVccto+2.0Vforperiodsupto20ns,seebelowFigure.

Maximum Negative Overshoot Waveform Maximum Positive Overshoot Waveform

Vss

Vss - 2.0V

20ns 20ns

20ns

Vcc + 2.0V

Vcc

20ns 20ns

20ns

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MX29GL256E H/L

DC CHARACTERISTICSSymbol Description Min Typ Max Remark

Iilk InputLeak ±2.0uA

Iilk9 A9Leak 35uA A9=10.5V

Iolk OutputLeak ±1.0uA

Icr1 ReadCurrent

6mA 20mACE#=Vil,OE#=Vih,Vcc=Vccmax;f=1MHz,ByteMode

30mA 50mACE#=Vil,OE#=Vih,Vcc=Vccmax;f=5MHz,ByteMode

60mA 100mACE#=Vil,OE#=Vih,Vcc=Vccmax;f=10MHz

Iio VIOnon-activecurrent 0.2mA 10mA

Icw WriteCurrent 26mA 30mA CE#=Vil,OE#=Vih,WE#=Vil

Isb StandbyCurrent 30uA 100uA Vcc=Vccmax,otherpindisable

Isbr ResetCurrent 30uA 100uAVcc=Vccmax,RESET#enable,otherpindisable

Isbs SleepModeCurrent 30uA 100uA

Idpd Vccdeeppowerdowncurrent 10uA

Icp1 AcceleratedPgmCurrent,WP#/Accpin(Word/Byte) 5mA 10mA CE#=Vil,OE#=Vih

Icp2 AcceleratedPgmCurrent,Vccpin,(Word/Byte) 20mA 30mA CE#=Vil,OE#=Vih

Vil InputLowVoltage -0.1V 0.3xVI/OVih InputHighVoltage 0.7xVI/O VI/O+0.3V

Vhv VeryHighVoltageforAutoSelect/AcceleratedProgram 9.5V 10.5V

Vol OutputLowVoltage 0.45V Iol=100uA

Voh1 OuputHighVoltage 0.85xVI/O Ioh1=-100uA

Voh2 OuputHighVoltage VI/O-0.4V Ioh2=-100uA

Vlko LowVccLock-outvoltage 2.3V 2.5V

Note:Sleepmodeenablesthelowerpowerwhenaddressremainstablefortaa+30ns.

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MX29GL256E H/L

SWITCHING TEST CIRCUITS

SWITCHING TEST WAVEFORMS

TestConditionOutputLoadCapacitance,CL:1TTLgate,30pF(90ns)Rise/FallTimes:5nsInputPulselevels:0.0~VI/OIn/Outreferencelevels:0.5VI/O

Test Points

VI/O

VI/O / 2VI/O / 2

0.0VOUTPUTINPUT

DEVICE UNDERTEST

CL

3.3V

6.2KΩ

2.7KΩ

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MX29GL256E H/L

AC CHARACTERISTICS

Symbol Description29GL256E

(VCC=2.7V~3.6V)29GL256E

(VCC=3.0V~3.6V) UnitMin. Typ. Max. Min. Typ. Max.

Taa Validdataoutputafteraddress 100 90 nsTpa Pageaccesstime 25 25 nsTce ValiddataoutputafterCE#low 100 90 nsToe ValiddataoutputafterOE#low 25 25 nsTdf DataoutputfloatingafterOE#high 20 20 nsTsrw Latencybetweenreadandwriteoperation 20 20 ns

Toh Output hold time from theearliest risingedgeofaddress,CE#,OE# 0 0 ns

Trc Readperiodtime 100 90 nsTwc Writeperiodtime 100 90 nsTcwc Commandwriteperiodtime 100 90 nsTas Addresssetuptime 0 0 ns

Taso Address setup time toOE# lowduring toggle bitpolling 15 15 ns

Tah Addressholdtime 45 45 ns

Taht Addresshold time fromCE#orOE#highduringtogglebitpolling 0 0 ns

Tds Datasetuptime 30 30 nsTdh Dataholdtime 0 0 nsTvcs Vccsetuptime 500 500 usTcs ChipenableSetuptime 0 0 nsTch Chipenableholdtime 0 0 nsToes Outputenablesetuptime 0 0 ns

Toeh OutputenableholdtimeRead 0 0 ns

Toggle&Data#Polling 10 10 ns

Tws WE#setuptime 0 0 nsTwh WE#holdtime 0 0 nsTcepw CE#pulsewidth 35 35 nsTcepwh CE#pulsewidthhigh 30 30 nsTwp WE#pulsewidth 35 35 nsTwph WE#pulsewidthhigh 30 30 nsTbusy Program/EraseactivetimebyRY/BY# 100 90 nsTghwl Readrecovertimebeforewrite 0 0 nsTghel Readrecovertimebeforewrite 0 0 nsTwhwh1 Programoperation Byte 11 11 usTwhwh1 Programoperation Word 11 11 usTwhwh1 Accprogramoperation(Word/Byte) 11 11 usTwhwh2 Sectoreraseoperation 0.6 5 0.6 5 secTbal Sectoraddholdtime 50 50 usTrdp Releasefromdeeppowerdownmode 200 200 us

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MX29GL256E H/L

Figure 1. COMMAND WRITE OPERATION

Addresses

CE#

OE#

WE#

DIN

Tds

Tah

Data

Tdh

Tcs Tch

Tcwc

TwphTwpToes

Tas

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

VA

VA: Valid Address

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MX29GL256E H/L

READ/RESET OPERATION

Figure 2. READ TIMING WAVEFORMS

Addresses

CE#

OE#

Taa

WE#

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Voh

Vol

Tsrw

HIGH Z HIGH ZDATA Valid

ToeToeh Tdf

Tce

Trc

Outputs

Toh

ADD Valid

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MX29GL256E H/L

Figure 3. RESET# TIMING WAVEFORM

Trh

Trb1

Trp2

Trp1

Tready2

Tready1

RY/BY#

CE#, OE#

RESET#

Reset Timing NOT during Automatic Algorithms

Reset Timing during Automatic Algorithms

RY/BY#

CE#, OE#

Trb2

WE#

RESET#

AC CHARACTERISTICS

Item Description Setup Speed UnitTrp1 RESET#PulseWidth(DuringAutomaticAlgorithms) MIN 10 us

Trp2 RESET#PulseWidth(NOTDuringAutomaticAlgorithms) MIN 500 ns

Trh RESET#HighTimeBeforeRead MIN 200 ns

Trb1 RY/BY#RecoveryTime(toCE#,OE#golow) MIN 0 ns

Trb2 RY/BY#RecoveryTime(toWE#golow) MIN 50 ns

Tready1 RESET#PINLow(DuringAutomaticAlgorithms)toReadorWrite MAX 20 us

Tready2 RESET#PINLow(NOTDuringAutomaticAlgorithms)toReadorWrite MAX 500 ns

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MX29GL256E H/L

ERASE/PROGRAM OPERATION

Figure 4. AUTOMATIC CHIP ERASE TIMING WAVEFORM

Twc

Address

OE#

CE#

55h

2AAh 555h

10h

InProgress Complete

VA VA

Tas Tah

Tghwl

Tch

Twp

Tds Tdh

Twhwh2

Read StatusLast 2 Erase Command Cycle

Tbusy Trb

Tcs TwphWE#

Data

RY/BY#

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MX29GL256E H/L

Figure 5. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART

START

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data AAH Address 555H

Write Data 80H Address 555H

YES

NOData=FFh ?

Write Data 10H Address 555H

Write Data 55H Address 2AAH

Data# Polling Algorithm or

Toggle Bit Algorithm

Auto Chip Erase Completed

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MX29GL256E H/L

Figure 6. AUTOMATIC SECTOR ERASE TIMING WAVEFORM

Twc

Address

OE#

CE#

55h

2AAh SectorAddress 1

SectorAddress 0

30h

InProgress Complete

VA VA

30h

SectorAddress n

Tas

Tah

Tbal

Tghwl

Tch

Twp

Tds Tdh

Twhwh2

Read Status

Last 2 Erase Command Cycle

TbusyTrb

Tcs TwphWE#

Data

RY/BY#

30h

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MX29GL256E H/L

Figure 7. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART

START

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Data AAH Address 555H

Write Data 80H Address 555H

Write Data 30H Sector Address

Write Data 55H Address 2AAH

Data# Polling Algorithm or

Toggle Bit Algorithm

Auto Sector Erase Completed

NOLast Sector

to Erase

YES

YES

NOData=FFh

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52P/N:PM1499 REV. 1.0, APR. 28, 2009

MX29GL256E H/L

Figure 8. ERASE SUSPEND/RESUME FLOWCHART

START

Write Data B0H

Toggle Bit checking Q6 not toggled

ERASE SUSPEND

YES

NO

Write Data 30H

Continue Erase

Reading or Programming End

Read Array orProgram

AnotherErase Suspend ?

NO

YES

YES

NO

ERASE RESUME

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MX29GL256E H/L

Figure 9. AUTOMATIC PROGRAM TIMING WAVEFORMS

Figure 10. ACCELERATED PROGRAM TIMING DIAGRAM

Address

OE#

CE#

A0h

555h PA

PD Status DOUT

VA VA

Tas Tah

Tghwl

Tch

Twp

Tds Tdh

Twhwh1

Last 2 Read Status CycleLast 2 Program Command Cycle

TbusyTrb

Tcs TwphWE#

Data

RY/BY#

WP#/ACC

250nS 250nS

Vhv(9.5V ~ 10.5V)

Vil or Vih Vil or Vih

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54P/N:PM1499 REV. 1.0, APR. 28, 2009

MX29GL256E H/L

Figure 11. CE# CONTROLLED WRITE TIMING WAVEFORM

Address

OE#

CE#

A0h

555h PA

PD Status DOUT

VA VA

Tas Tah

Tghwl

Tcepw

Tds Tdh

Twhwh1 or Twhwh2

Tbusy

Tcepwh

WE#

Data

RY/BY#

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MX29GL256E H/L

Figure 12. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART

START

Write Data AAH Address 555H

Write Data 55H Address 2AAH

Write Program Data/Address

Write Data A0H Address 555H

YES

Read Again Data:Program Data?

YES

Auto Program Completed

Data# Polling Algorithm orToggle Bit Algorithm

next address

Last Word to beProgramed

No

No

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MX29GL256E H/L

Figure 13. SILICON ID READ TIMING WAVEFORM

Taa Taa Taa Taa

Tce

Toe

Toh Toh Toh Toh

Tdf

DATA OUT

Manufacturer ID Device IDCycle 1

Device IDCycle 2

Device IDCycle 3

VhvVihVil

ADDA9

ADD

CE#

A1

OE#

WE#

ADDA0

DATA OUT DATA OUT DATA OUTDATAQ0-Q15

VCC3V

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

A2

Disable

Enable

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MX29GL256E H/L

WRITE OPERATION STATUS

Figure 14. DATA# POLLING TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS)

Tdf

Tce

Tch

Toe

Toeh

Toh

CE#

OE#

WE#

Q7

Q0-Q6

RY/BY#

Tbusy

Status Data Status Data

Status Data Complement True Valid Data

Taa

Trc

Address VAVA

High Z

High ZValid DataTrue

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MX29GL256E H/L

Figure 15. DATA# POLLING ALGORITHM

Notes:1.Forprogramming,validaddressmeansprogramaddress.Forerasing,validaddressmeanserasesectorsaddress.2.Q7shouldberecheckedevenQ5="1"becauseQ7maychangesimultaneouslywithQ5.

Read Q7~Q0 at valid address(Note 1)

Read Q7~Q0 at valid address

Start

Q7 = Data# ?

Q5 = 1 ?

Q7 = Data# ?(Note 2)

FAIL Pass

No

No

No

Yes

Yes

Yes

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MX29GL256E H/L

Figure 16. TOGGLE BIT TIMING WAVEFORMS (DURING AUTOMATIC ALGORITHMS)

Tdf

Taht Taso

Tce

Tch

Toe

Toeh

Taa

Trc

Toh

Address

CE#

OE#

WE#

Q6/Q2

RY/BY#

Tbusy

Valid Status

(first read)

Valid Status

(second read) (stops toggling)

Valid Data

VA VAVA

VA : Valid Address

VA

Valid Data

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60P/N:PM1499 REV. 1.0, APR. 28, 2009

MX29GL256E H/L

Figure 17. TOGGLE BIT ALGORITHM

Notes:1.Readtogglebittwicetodeterminewhetherornotitistoggling.2.RechecktogglebitbecauseitmaystoptogglingasQ5changesto"1".

Read Q7-Q0 Twice

Q5 = 1?

Read Q7~Q0 Twice

PGM/ERS failWrite Reset CMD PGM/ERS Complete

Q6 Toggle ?

Q6 Toggle ?

NO

(Note 1)

YES

NO

NO

YES

YES

Start

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61P/N:PM1499 REV. 1.0, APR. 28, 2009

MX29GL256E H/L

Figure 18. BYTE# TIMING WAVEFORM FOR READ OPERATIONS (BYTE# switching from byte mode to word mode)

AC CHARACTERISTICS

WORD/BYTE CONFIGURATION (BYTE#)

Parameter Description Test Setup All Speed Options Unit

Telfl/Telfh CE#toBYTE#fromL/H Max. 5 nsTflqz BYTE#fromLtoOutputHiz Max. 30 nsTfhqv BYTE#fromHtoOutputActive Min. 90 ns

Figure 19. PAGE READ TIMING WAVEFORM

Tfhqv

Telfh

DOUT(Q0-Q7)

DOUT(Q0-Q14)

VA DOUT(Q15)

CE#

OE#

BYTE#

Q0~Q14

Q15/A-1

Amax:A3

(A-1),A0,A1,A2

DATA

CE#/OE#

Note: CE#, OE# are enable. Page size is 8 words in Word mode, 16 bytes in Byte mode. Address are A2~A0 for Word mode, A2~A-1 for Byte mode.

VALID ADD

Data 1 Data 2 Data 3

1'st ADD 2'nd ADD

tpa taa

3'rd ADD

tpa

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62P/N:PM1499 REV. 1.0, APR. 28, 2009

MX29GL256E H/L

Figure 20. DEEP POWER DOWN MODE WAVEFORM

CEB

WEB

ADD

DATA

XX

B9

2AA55

tDP

XX (don't care)

AB

Standby mode

AA 55

Deep power down mode

tRDP

Standby mode

ITEM TYP MAXWEBhightoreleasefromdeeppowerdownmode tRDP 100us 200us

WEBhightodeeppowerdownmode tDP 10us 20us

AC CHARACTERISTICS

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MX29GL256E H/L

Figure 21. WRITE BUFFER PROGRAM FLOWCHART

Write CMD: Data=AAh, Addr=555h

Write CMD: Data=55h, Addr=2AAh

Write CMD: Data=25h, Addr=SA

SA: Sector Address of to be Programmed page

Write CMD: Data=PWC, Addr=SA

PWC: Program Word Count

Write CMD:Data=PGM_data, Addr=PGM_addr

PWC =0?

Write CMD: Data=29h, Addr=SA

Polling Status

Yes

Pass

No

No

Write Buffer Abort

Write reset CMD to return to read Mode

PWC=PWC-1 NoFail

YesWant to Abort ?

Yes

NoNo

Yes

Return to read Mode

Write Abort reset CMD to return to read Mode

Write a different sector address to cause Abort

Yes

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64P/N:PM1499 REV. 1.0, APR. 28, 2009

MX29GL256E H/L

RECOMMENDED OPERATING CONDITIONS

At Device Power-Up

ACtimingillustratedinFigureAisrecommendedforthesupplyvoltagesandthecontrolsignalsatdevicepower-up.Ifthetiminginthefigureisignored,thedevicemaynotoperatecorrectly.

Figure A. AC Timing at Device Power-Up

Vcc

ADDRESS

CE#

WE#

OE#

DATA

Tvr

TaaTr or Tf Tr or Tf

TceTf

Vcc(min)

GND

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

Vih

Vil

VohHigh Z

Vol

WP#/ACC

ValidOuput

ValidAddress

Tvcs

Tr

ToeTfTr

Symbol Parameter Min. Max. UnitTvr VccRiseTime 20 500000 us/VTr InputSignalRiseTime 20 us/VTf InputSignalFallTime 20 us/V

Tvcs VccSetupTime 500 us

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MX29GL256E H/L

LATCH-UP CHARACTERISTICS

ERASE AND PROGRAMMING PERFORMANCE

PIN CAPACITANCE

Notes:1. Typicalprogramanderasetimesassumethefollowingconditions:25°C,3.0VVCC.Programmingspecifica-

tionsassumecheckboarddatapattern.2.MaximumvaluesaremeasuredatVCC=3.0V,worstcasetemperature.Maximumvaluesarevaliduptoand

including100,000program/erasecycles.3.Erase/ProgramcyclescomplywithJEDECJESD-47E&A117Astandard.4.Exclude00hprogrambeforeeraseoperation.

Parameter Symbol Parameter Description Test Set TYP MAX UNITCIN2 ControlPinCapacitance VIN=0 7.5 9 pFCOUT OutputCapacitance VOUT=0 8.5 12 pFCIN InputCapacitance VIN=0 6 7.5 pF

MIN. MAX.InputVoltagevoltagedifferencewithGNDonWP#/ACCandA9pins -1.0V 10.5VInputVoltagevoltagedifferencewithGNDonallnormalpinsinput -1.0V 1.5VccVccCurrent -100mA +100mAAllpinsincludedexceptVcc.Testconditions:Vcc=3.0V,onepinpertesting

PARAMETER LIMITS UNITSMIN. TYP. (1) MAX. (2)ChipEraseTime 128 300 secSectorEraseTime 0.6 5 sec

ChipProgrammingTime 100 350 sec

WordProgramTime 11 360 us

TotalWriteBufferTime 200 us

ACCTotalWriteBufferTime 100 us

Erase/ProgramCycles 100,000 Cycles

DATA RETENTIONPARAMETER Condition Min. Max. UNITDataretention 55˚C 20 years

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ORDERING INFORMATION

PART NO. ACCESS TIME (ns) PACKAGE RemarkMX29GL256EHMC-90Q** 90 70PinSSOP Pb-free*

MX29GL256EHXFI-90Q 90 64LFBGA Pb-free*

MX29GL256ELXFI-90Q 90 64LFBGA Pb-free*

MX29GL256EHXCI-90Q 90 64FBGA Pb-free*

MX29GL256ELXCI-90Q 90 64FBGA Pb-free*

MX29GL256EHT2I-90Q 90 56PinTSOP Pb-free*

MX29GL256ELT2I-90Q 90 56PinTSOP Pb-free*

Note:*90Qcovers2.7V~3.6Vfor100nsand3.0V~3.6Vfor90ns.**70-pinSSOPonlyforPachinkoSocket.

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MX29GL256E H/L

PART NAME DESCRIPTION

MX 29 GL 90E H T2 I QOPTION:Q: Lead-free with restricted Vcc: 3.0V~3.6V (Note 1)

SPEED:90: 90ns

TEMPERATURE RANGE:I: Industrial (-40° C to 85° C)C: Commercial (0° C to 70° C)

PACKAGE:

BOOT BLOCK TYPE:H: Highest Address Sector ProtectedL: Lowest Address Sector Protected

REVISION:E

DENSITY & MODE:256: 256Mb x8/x16 Uniform Block

GL: 3V Page ModeTYPE:

DEVICE:29:Flash

256

T2: 56-TSOPM: 70SSOPXF: LFBGA (11mm x 13mm)XC: FBGA (10mm x 13mm)

Note1:90Qcovers2.7V~3.6Vfor100nsand3.0V~3.6Vfor90ns

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PACKAGE INFORMATION

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REVISION HISTORY

Revision No. Description Page Date1.0 1.Revised70-SSOPgroundpinconfigurations P4 APR/28/2009 2.Addedovershoot&undershootspecifications P41 3.Removed"Preliminary" P2 4.Changeddataretentionfrom10yearsto20years P2,65

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73

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MX29GL256E H/L

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