November 2010 Doc ID 15781 Rev 2 1/12

12

STP165N10F4N-channel 100 V, 4.4 mΩ, 120 A TO-220

STripFET™ DeepGATE™ Power MOSFET

Features

■ N-channel enhancement mode

■ 100% avalanche rated

■ Low gate charge

■ Very low on-resistance

ApplicationSwitching applications

DescriptionThe STP165N10F4 is an N-channel enhancement mode Power MOSFET built with STripFET™ DeepGATE™ technology with a new gate structure. The product is tailored to minimize on-resistance.

Figure 1. Internal schematic diagram

Order code VDSS RDS(on) max ID

STP165N10F4 100 V < 5.5 mΩ 120 A

12

3

TO-220

Table 1. Device summary

Order code Marking Package Packaging

STP165N10F4 165N10F4 TO-220 Tube

www.st.com

Contents STP165N10F4

2/12 Doc ID 15781 Rev 2

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

STP165N10F4 Electrical ratings

Doc ID 15781 Rev 2 3/12

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage (VGS = 0) 100 V

VGS Gate- source voltage ± 20 V

ID Drain current (continuous) at TC = 25 °C 120 A

ID Drain current (continuous) at TC = 100 °C 110 A

IDM (1)

1. Pulse width limited by safe operating area

Drain current (pulsed) 480 A

PTOT Total dissipation at TC = 25 °C 315 W

Derating factor 2.1 W/°C

EAS (2)

2. Starting Tj = 25 °C, ID= 58 A, VDD= 50 V

Single pulse avalanche energy 500 mJ

Tstg Storage temperature - 55 to 150°C

Tj Max. operating junction temperature 150

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 0.48 °C/W

Rthj-a Thermal resistance junction-ambient max 62.5 °C/W

Tl Maximum lead temperature for soldering purpose 315 °C

Electrical characteristics STP165N10F4

4/12 Doc ID 15781 Rev 2

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSSDrain-source

Breakdown voltageID = 250 µA, VGS = 0 100 V

IDSSZero gate voltage

Drain current (VGS = 0)

VDS = max rating 1 µA

VDS = max rating,TC=125 °C 100 µA

IGSSGate-body leakagecurrent (VDS = 0)

VGS = ± 20 V 100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 4 V

RDS(on)Static drain-source on resistance

VGS = 10 V, ID = 60 A 4.4 5.5 mΩ

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

10750 pF

Coss Output capacitance - 939 - pF

CrssReverse transfer capacitance

603 pF

Qg Total gate charge VDD = 50 V, ID = 120 A,VGS = 10 V

(see Figure 14)

192 nC

Qgs Gate-source charge - 48 - nC

Qgd Gate-drain charge 62 nC

STP165N10F4 Electrical characteristics

Doc ID 15781 Rev 2 5/12

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on)

tr

Turn-on delay time

Rise time

VDD = 50 V, ID = 60 A RG = 4.7 Ω VGS = 10 V

(see Figure 13)-

29.6

62-

ns

ns

td(off)

tf

Turn-off-delay time

Fall time

VDD = 50 V, ID = 60 A,

RG = 4.7 Ω, VGS = 10 V(see Figure 13)

-154

106-

ns

ns

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 120 A

ISDM (1)

1. Pulse width limited by safe operating area.

Source-drain current (pulsed)

- 480 A

VSD (2)

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage ISD = 120 A, VGS = 0 - 1.4 V

trrQrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 120 A,

VDD = 80 Vdi/dt = 100 A/µs,

Tj = 150 °C (see Figure 15)

-

86.8

313

7.2

ns

nC

A

Electrical characteristics STP165N10F4

6/12 Doc ID 15781 Rev 2

2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance

Figure 4. Output characteristics Figure 5. Transfer characteristics

Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance

ID

100

10

1

0.10.1 1 100 VDS(V)10

(A)

Opera

tion

in th

is ar

ea is

Limite

d by

max

RDS(o

n)

100µs

1ms

10ms

Tj=150°CTc=25°CSingle pulse

AM08651v1

10-5

10-4

10-3 10

-210

-1tp(s)

10-2

10-1

K

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-cδ=tp/τ

tp

τ

Single pulse

δ=0.5

280tok

ID

150

100

50

00 VDS(V)3

(A)

1 2 4

200

250

5V

6V

7VVGS=10V300

350

4V

AM08652v1ID

00 4 VGS(V)8

(A)

2 6

VDS=2V

150

100

50

200

250

300

AM08653v1

BVDSS

-75 TJ(°C)

(norm)

-25 7525 1250.90

0.95

1.00

1.05

1.10

ID=1mA

175

AM08654v1RDS(on)

4.8

4.7

4.6

4.50 40 ID(A)

(mΩ)

20 60

4.9

5.0

5.1

5.2

VGS=10V

10080 120

5.3

AM08655v1

STP165N10F4 Electrical characteristics

Doc ID 15781 Rev 2 7/12

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations

Figure 10. Normalized gate threshold voltage vs temperature

Figure 11. Normalized on resistance vs temperature

Figure 12. Source-drain diode forward characteristics

VGS

6

4

2

00 50 Qg(nC)

(V)

200

8

100 150

10

VDS=50VID=120A

12

AM08656v1C

6100

4100

2100

1000 40 VDS(V)

(pF)

20

8100

60

Ciss

CossCrss

80 100

12100

10100

14100

AM08657v1

VGS(th)

0.8

0.6

0.4

0.2-75 TJ(°C)

(norm)

-25

1.0

7525 125 175

1.2

ID=250µA

AM08658v1 RDS(on)

1.7

1.2

0.7

0.2-75 TJ(°C)

(norm)

-25 7525 125

ID=60A

175

2.2VGS=10V

AM08659v1

VSD

0 40 ISD(A)

(V)

20 10060 800.5

0.6

0.7

0.8

0.9

1.0

TJ=-55°C

TJ=175°C

TJ=25°C

120

AM08660v1

Test circuits STP165N10F4

8/12 Doc ID 15781 Rev 2

3 Test circuits

Figure 13. Switching times test circuit for resistive load

Figure 14. Gate charge test circuit

Figure 15. Test circuit for inductive load switching and diode recovery times

Figure 16. Unclamped inductive load test circuit

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

AM01468v1

VGS

PW

VD

RG

RL

D.U.T.

2200

μF3.3μF

VDD

AM01469v1

VDD

47kΩ 1kΩ

47kΩ

2.7kΩ

1kΩ

12V

Vi=20V=VGMAX

2200μF

PW

IG=CONST100Ω

100nF

D.U.T.

VG

AM01470v1

AD

D.U.T.

SB

G

25 Ω

A A

BB

RG

G

FASTDIODE

D

S

L=100μH

μF3.3 1000

μF VDD

AM01471v1

Vi

Pw

VD

ID

D.U.T.

L

2200μF

3.3μF VDD

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

AM01473v1

VDS

ton

tdon tdoff

toff

tftr

90%

10%

10%

0

0

90%

90%

10%

VGS

STP165N10F4 Package mechanical data

Doc ID 15781 Rev 2 9/12

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

Package mechanical data STP165N10F4

10/12 Doc ID 15781 Rev 2

TO-220 type A mechanical data

Dimmm

Min Typ Max

A 4.40 4.60b 0.61 0.88

b1 1.14 1.70

c 0.48 0.70D 15.25 15.75

D1 1.27

E 10 10.40e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32H1 6.20 6.60

J1 2.40 2.72

L 13 14L1 3.50 3.93

L20 16.40

L30 28.90∅P 3.75 3.85

Q 2.65 2.95

0015988_Rev_S

STP165N10F4 Revision history

Doc ID 15781 Rev 2 11/12

5 Revision history

Table 8. Document revision history

Date Revision Changes

19-May-2009 1 First release

12-Nov-2010 2– Removed package H²PAK.– Document status promoted from preliminary data to datasheet.

STP165N10F4

12/12 Doc ID 15781 Rev 2

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