Problem Statement and Motivation Key Achievements and Future Goals Technical Approach Nano-magnetism and high-density magnetic memory Vitali Metlushko, Department of Electrical & Computer Engineering and Nanotechnology Core Facility (NCF) Primary Grant Support: NSF ECS grant # ECS-0202780, Antidot and Ring Arrays for Magnetic Storage Applications and NSF NIRT grant # DMR-0210519 : Formation and Properties of Spin-Polarized Quantum Dots in Magnetic Semiconductors by Controlled Variation of Magnetic Fields on the Nanoscale, B. Janko (P.I.), J. K. Furdyna (co-P.I.), M. Dobrowolska (co-P.I.), University of Notre Dame is leading organization, A. M. Chang (Purdue) and V. Metlushko, (UIC) The field of nanoelectronics is overwhelmingly dedicated to the exploitation of the behavior of electrons in electric fields. Materials employed are nearly always semiconductor-based, such as Si or GaAs, and other related dielectric and conducting materials. An emerging basis for nanoelectronic systems is that of magnetic materials. In the form of magnetic random access memories (MRAM), nanoscale magnetic structures offer fascinating opportunities for the development of low-power and nonvolatile memory elements. • This project has led to collaboration with MSD, CNM and APS ANL, Katholieke Univesiteit Leuven, Belgium, University of Notre Dame, NIST, Universita` di Ferrara, Italy, Inter- University Micro- Electronics Center (IMEC), Belgium, Cornell University, McGill University and University of Alberta, Canada • During the past 3 years this NSF-supported work resulted in 21 articles in refereed journals In past few years, the interest in nano-magnetism has encreased rapidly because they offer potential application in MRAM. Modern fabrication techniques allow us to place the magnetic elements so close together that element-element interactions compete with single-element energies and can lead to totally different switching dynamics. To visualize the magnetization reversal process in individual nano- magnets as well as in high-density arrays, Metlushko and his co-authors employed several different imaging techniques- magnetic force microscopy (MFM), scanning Hall microscopy, magneto-optical (MO) microscopy, SEMPA and Lorentz microscopy (LM). SEM image of 700nm MRAM cells. Lorentz image of magnetic nanostructure. UIC’s Nanoscale Core Facility

Nano -magnetism and high-density magnetic memory

Download PPTX Report

Upload
armando-carr
View
43
Download
1

Tags:

Embed Size (px)

DESCRIPTION

SEM image of 700nm MRAM cells. Nano -magnetism and high-density magnetic memory. Vitali Metlushko , Department of Electrical & Computer Engineering and Nanotechnology Core Facility (NCF) - PowerPoint PPT Presentation

Citation preview

Page 1: Nano -magnetism and high-density magnetic memory

Problem Statement and Motivation

Key Achievements and Future GoalsTechnical Approach

Nano-magnetism and high-density magnetic memory Vitali Metlushko, Department of Electrical & Computer Engineering and Nanotechnology Core Facility (NCF)

Primary Grant Support: NSF ECS grant # ECS-0202780, Antidot and Ring Arrays for Magnetic Storage Applications and NSF NIRT grant # DMR-0210519 : Formation and Properties of Spin-Polarized Quantum Dots in Magnetic Semiconductors by Controlled Variation of Magnetic Fields on the Nanoscale, B. Janko (P.I.), J. K. Furdyna (co-P.I.), M. Dobrowolska (co-P.I.), University of Notre Dame is

leading organization, A. M. Chang (Purdue) and V. Metlushko, (UIC)

The field of nanoelectronics is overwhelmingly dedicated to the exploitation of the behavior of electrons in electric fields. Materials employed are nearly always semiconductor-based, such as Si or GaAs, and other related dielectric and conducting materials. An emerging basis for nanoelectronic systems is that of magnetic materials. In the form of magnetic random access memories (MRAM), nanoscale magnetic structures offer fascinating opportunities for the development of low-power and nonvolatile memory elements.

• This project has led to collaboration with MSD, CNM and APS ANL, Katholieke Univesiteit Leuven, Belgium, University of Notre Dame, NIST, Universita` di Ferrara, Italy, Inter-University Micro-Electronics Center (IMEC), Belgium, Cornell University, McGill University and University of Alberta, Canada

• During the past 3 years this NSF-supported work resulted in 21 articles in refereed journals already published and 10 invited talks in the US, Europe and Japan.

In past few years, the interest in nano-magnetism has encreased rapidly because they offer potential application in MRAM. Modern fabrication techniques allow us to place the magnetic elements so close together that element-element interactions compete with single-element energies and can lead to totally different switching dynamics. To visualize the magnetization reversal process in individual nano-magnets as well as in high-density arrays, Metlushko and his co-authors employed several different imaging techniques- magnetic force microscopy (MFM), scanning Hall microscopy, magneto-optical (MO) microscopy, SEMPA and Lorentz microscopy (LM).

SEM image of 700nm MRAM cells.

Lorentz image of magnetic nanostructure.

UIC’s Nanoscale Core Facility